InN

Solarspectrum

InN: 14000cm2/Vs

(200nm)(2000nm)

InN MOCVD or MBE

MBE

N InN

Mg

MOCVDNH3

MBE InN

Ga Al

MOCVD InN

improving MOVPE-6-10, 2008, Th2a-F1

InN

NH3

NH3 N MOCVD

NH3

InN X

550 InN

550

Tg =600ºC

550ºC

InN PL

PL

325, 442, 633 nm

InN

N )

, 2

PL

PL

1 m

InN

0.5

1.0

1.5

2.0

InN 650

N

NH3

?

NH3 N

NH3 N MOCVD

[2] S.F. Yin et al., Applied catalysts A: General 277 (2004) 1.

NH3

Temperature (K)800 1100 1400500

10

10

10

19

17

16

1018

N

2

form

atio

n r

ate

(mole

cule

s·cm

-

2·sec

-

1)

Pt

Rh

Ir

Pd

(Ref.2)

1510

NH3 [Ref. 3]

[3] M. C. Bradford et al., J. Catal. 172 (1997) 479.

2 (NH3 + * NH3*) [i]2 (NH3* + * NH2* + H*) [ii]2 (NH2* + * NH* + H* [iii]2 (NH* + * N* + H*) [iv]3 (2H* H2 + 2*) [v]2 N* N2 + 2* [vi]2 NH3 N2 + 3H2 [vii]

(*: )

525 ~ 600ºC

650 ~ 1000ºC

Pt

Hall (van der Pauw method)

,

X(0002) (1011)

a- c-

E2(high)

Raman

600ºC

500 550 6000

500

1000

1500

(ºC)H

all

(cm

2/V

s)

:Pt , NH3 6 slm:Pt , NH3 3 slm

InN

500 550 6001018

1019

1020

(cm

-3)

(ºC)

:Pt , NH3 6 slm:Pt , NH3 3 slm

MOCVD InN1340 cm2/Vs

.

500 550 6000

500

1000

1500

(ºC)

Hall

(cm

2/

Vs)

::PtPt

, 2, 2

:Pt , 6

InN

InN

N

[5] Kadir etal., Appl. Phys. Lett., 91, 111913 (2007).[6]W. Paszkowicz et. al., Powder Diffr. 18, 114 (2003) (2).

a c

InN

3.50 3.51 3.52 3.53 3.54 3.555.68

5.69

5.70

5.71

5.72

5.73

a (Å)

c(Å

)

2(Ref.5)

Pt550ºC

Pt550ºC

Pt600ºC

~0.2 GPa

Ref.6)

NH3 N

GaN InN MOCVDMBE

22.9 arcmin

-60 -40 -20 0 20 40 60

(a.u

.)

(arcmin)

8.63arcmin

00 0.5 1.0 1.5

50

100

540 560 580 600 6203

4

5

::

(cm

-1) 550ºC

InN

: Raman

GaN

GaN

LED, LD

n-GaN

p-GaN InGaN

n-GaN

p-GaNInGaN

InGaN GaN GaN InGaN

GaN

Pt

850 1000

InN MOCVDInN

550 InN MOCVD NH3

550InN

GaN