BAV19 / BAV20 / B

AV21

BAV19/20/21, Rev. C

BAV19 / 20 / 21

Small Signal DiodeAbsolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 200 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

DO-35Color Band Denotes Cathode

2001 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units VRRM Maximum Repetitive Reverse Voltage BAV19

BAV20 BAV21

120 200 250

V V V

IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second Pulse Width = 1.0 microsecond

1.0 4.0

A A

Tstg Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C

Symbol

Parameter

Value

Units PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

VR Breakdown Voltage BAV19 BAV20 BAV21

IR = 100 µA IR = 100 µA IR = 100 µA

120 200 250

V V V

VF Forward Voltage IF = 100 mA IF = 200 mA

1.0 1.25

V V

IR Reverse Current BAV19

BAV20 BAV21

VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C

100 100 100 100 100 100

nA µA nA µA nA µA

CT Total Capacitance VR = 0, f = 1.0 MHz 5.0 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100Ω 50 ns

BAV19 / BAV20 / B

AV21

BAV19/20/21, Rev. C

Typical Characteristics

Small Signal Diode(continued)

°

275

300

325Ta=25 C

3 5 10 20 30 50 100

Rev

erse

Vol

tage

, V R

[V]

Reverse Current, IR [uA]Figure 1. Reverse Voltage vs Reverse Current

BV - 1.0 to 100uA

0

10

20

30

40

50

55 100

Ta= 25 C

Rev

erse

Cur

rent

, I

R [n

A]

Reverse Voltage, VR [V]

°

GENERAL RULE: The Reverse Current of a diode will approximatelydouble for every ten (10) Degree C increase in Temperature

°

Figure 2. Reverse Current vs Reverse VoltageIR - 55 to 205 V

20

30

40

50

60

70

80

90

100

180 200 220 240 255

Ta= 25 C

Rev

erse

Cur

rent

, I

R [n

A]

Reverse Voltage, VR [V]

250

300

350

400

450

1 2 3 5 10 20 30 50 100

Ta= 25 CFo

rwar

d Vo

ltage

, V

R [m

V]

Forward Current, IF [uA]

Figure 3. Reverse Current vs Reverse RoltageIR - 180 to 225 V

GENERAL RULE: The Reverse Current of a diode will approximatelydouble for every ten (10) Degree C increase in Temperature

Figure 4. Forward Voltage vs Forward CurrentVF - 1.0 to 100uA

450

500

550

600

650

700

0.1 0.2 0.3 0.5 1 2 3 5 10

Ta= 25 C

Forw

ard

Volta

ge, V

F [m

V]

Forward Current, IF [mA]

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

10 20 30 50 100 200 300 500 800

Ta= 25 C

Forw

ard

Vol

tage

, V F [

mV

]

Forward Current, IF [mA]

Figure 5. Forward Voltage vs Forward CurrentVF - 0.1 to 10mA

Figure 6. Forward Voltage vs Forward CurrentVF - 10 to 800mA

° °

°°

BAV19 / BAV20 / B

AV21

BAV19/20/21, Rev. C

Typical Characteristics (continued)

Small Signal Diode(continued)

°

100

200

300

400

500

600

700

800

900

0.001 0.003 0.01 0.03 0.1 0.3 1 3 10

Ta= -40 C

Ta= 25 C

Ta= +80 C

For

war

d V

olta

ge, V

F [m

V]

Forward Current, IF [mA]

Figure 7. Forward Voltagevs Ambient Temperature

VF - 1.0 uA - 10 mA (-40 to +80 Deg C)

0 2 4 6 8 10 12 140.8

0.9

1.0

1.1

1.2

1.3Ta= 25 C

Tota

l Cap

acita

nce

[pF]

Reverse Voltage [V]

Figure 8. Total Capacitance

1.0 1.5 2.0 2.5 3.020

30

40

50

IF = IR = 30 mARloop = 100 Ohms

Rev

erse

Rec

over

y T

ime

[nS

]

Reverse Recovery Current, Irr [mA]0 50 100 150

0

100

200

300

400

IF(AV) - AVERAGE RECTIFIED CURRENT - mA

C

urre

nt [m

A]

Ambient Temperature, TA [ C]

Figure 9. Reverse Recovery Time vsReverse Recovery Current

Figure 10. Average Rectified Current (IF(AV))versus Ambient Temperature (TA)

0 50 100 150 2000

100

200

300

400

500

DO-35 Pkg

SOT-23 Pkg

Pow

er D

issi

patio

n, P

D [m

W]

Average Temperature, IO [ C]Figure 11. Power Derating Curve

°

°

°

°

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

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