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1.7 (B) BASIC ELECTRONICS (908)

Teaching Scheme Examination Scheme

TheoryHrs perweek

PracticalHrs perweek

TheoryMarks/ paper

duration

Practicalmarks

Oralmarks

Term-workmarks

Sessionalmarks

2 2 100/3HRS -- -- 50 50

Subject Objective

This subject is classified under engineering science group & intends to

teach the students facts, concepts, principle & procedures of basic electronics

devices & circuits and their application in electronics systems. The knowledge is

essential for the study of the core technology subjects like Applied electronics,

Digital techniques & applications, Linear integrated circuits which in turn will

develop investigation, design and testing skills in students.

Detailed Content

THEORY CONTENTSPRACTICALS

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Unit IChapter 1 Introduction to Basic Electronics Marks Period

00 01

1.1 Definition of Electronics

1.2 Application of Electronics1.3 Basic Electronic components

1.4 Symbols & unit

Chapter 2 Semiconductor Theory Marks Period 08 04

2.1 Atomic theory

- Structure of atom

2.2 Band theory2.3 Classification of material based on band theory

2.4 Conductors, insulators ,& semiconductor

& their comparison

2.5 Semiconductor material

2.5.1 Intrinsic & extrinsic semiconductor

2.5.2 Trivalent & pentavalent impurities

2.5.3 P type & N type semiconductor

1) Identification ofBasic

Electroniccomponents

2) Studyofdifferentelectronics

instruments &devices.

3) V-Icharacteristicsof P-NJunctiondiode.

Unit II Chapter 3 Rectifier Circuits Marks Period

10 08

3.1 P-N Junction Diode

3.1.1 P-N junction with forward & reversed bias

3 .1.2 V-I Characteristic of p-n junction diode

3 1.3 operating principle, applications of diode

3.1. 4 Static & dynamic resistance

4) StudyofHalf

waverectifier

5) StudyofFullwaverectifier

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3.2 Other types of diodes symbol, principle of operation and characteristic

of Photo diode, Varactor diode , Tunnel diode ,Point contact diode

3.3 Diode as Rectifier

3 .3.1 Definition of rectifier circuit

3 .3.2 Rectifier circuits HW, FW center tapped and FW bridge type

3 .3.3 Ripple factor PIV, comparison, merits and demerits of different

rectifier circuits

Chapter 4 Filter circuits Marks Period10 06

4.1 Circuit parameters resistor ,inductor ,capacitor

4 .2 Necessity of filter circuits

4 .3 Type of filter circuits

Series inductor type

Shunt capacitor type

L-C filter

filter

4 .4 Comparison ,merits & demerits of different filter

4 .5 Nature of o/p waveform of different filters

4.6 Voltage multipliers

4.6.1 Voltage doubler trippler & quadrupler circuits using P-N junction diode.

6) Studyofrectifierswith

capacitorfilter.

Marks Period 8 02

Chapter 5 Zener diode and its application.

5.1 Principle of operation of zener diode

5.2 VI characteristics of zener diode

5.3 Zener diode as voltage regulator

Unit III Marks Period12 06

Chapter 6 Bipolar Junction Transistor6.1 Introduction

6.2 Construction ,symbol ,operating principle of PNP & NPN transistors

6.3 Transistor configurations - CC, CB, CE

6.4 Transistor characteristics in different configurations

6.5 Comparison of 3 configuration

6.6 Transistor as an amplifier, commonly used transistor configuration

7) V-Icharacteristicsofzener

8) Diode &ZenerDiode asavoltageregul

ator.

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Marks Period

10 10

Chapter 7 Field Effect Transistor

7.1 Construction, symbol & working principle &

types of JFET

7.2 Characteristics of JFET

7.3 FET Parameters / terms

7.3.1 Dynamic drain resistance

7.3.2 Mutual conductance or transconductance

7.3.3 Pinch off voltage

7.3.4 amplification factor

7.4 Caparison, merits & demerits of JFET with BJT

7.5 Metal Oxide Semiconductor FET

7.5.1 Construction, symbol of MOSFET

7.5.2 Working principle of MOSFET

10) JFETCharacteristics

Marks Period

16 10

Chapter 8 Transistor Biasing & Stabilization

8.1 Introduction

8.2 Transistor biasing

8.3 Faithful amplification

8.4 Transistor operating points , selection of operating point

8.5 Variation of transistor parameters.

11) StudyofTransistorBiasingCircuits.

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8.6 Stabilization operating point

8.6.1 Need for stabilization

8.6.2 Thermal runaway

8.6.3 Stability factor

8.7. Requirement of transistor biasing

8.8. Methods of transistor biasing

8.8.1 Base resisters method or fixed bias circuits

Biasing with feed back resister or

collector to base bias ckt

8.8.2 Negative feedback & its effect on stabilization

8.8.3 Voltage divider bias method

8.8.4 Transistor Hybrid Parameters

Four parameter system, meaning of h parameters

for CB, CE & CC configuration.Marks Period

16 10

Chapter 9 Transistor Amplifiers

9.1 Introduction

9 .2 Classification of amplifiers

9.3 Single stage transistors amplifiers

9.4 Graphical explanation of transistors amplifiers

12) StudyofsinglestageC-E

amplifier.13) Frequ

encyresponse oftwostageR-Ccoupled C.E.amplifi

er.

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9.5 Practical ckt of transistors amplifiers

9.6 D-C & A-C equivalents ckts of transistors amplifiers

9.7 Load line analyses

9.8 Multistage transistors amplifiers

9 .8.1 Amplifiers coupling

9 .8.2 R-C coupled Transformer coupled & Direct coupled

Amplifiers

9.8.3 Comparison of different type of coupling

9.9 Frequency Response of multiple amplifiers

9.10 Gain ,Bandwidth ,Merits & Demerits of deferent coupling

Marks Period

10 8

Chapter 10 Transistor AF Power amplifiers

10.1 Transistors AF power amplifiers

10.2 Difference between voltage & power amplifiers

10.3 Classification of power amplifiers

10.4 Properties of class A,B,AB and C amplifiers ,comparison & their

applications10.4 Single ended, push-pull and complementary symmetry amplifiers

circuits

10.5 Thermal runaway and heat sinks

14) StudyofComplimentarySymmetrypushpull

amplifier.

Reference:

Sr.No.

Author Title Publisher

1.a) Bhargav A.Guptab) Kulshreshtha

Basic Electronics & LinearCircuits

TTTI, Chandigarth

2. Allen Mottorshed Electronic Devices and Circuts Tata Mc gra Hill

3. Malvino Electronic Principals Tata Mc Gra Hill

4. V. K. mehta Principals of Electronics S. Chand

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5. Sedha Applied Electronics S. Chand