B field and R VTX
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Transcript of B field and R VTX
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B field and RVTX
Yasuhiro Sugimoto
KEK
Feb.4, 2008
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Baseline design for LOI
Agreement in a phone meeting Two configurations
5 single layers 3 doublets
Same inner and outer radii (Rout=60mm) |cos|=0.95 for inner three layers and outer two la
yers have same length as the 3ed layer |cos|=0.95 for inner two doubles and outer doubl
et has the same length as the 2nd doublet
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Pair background simulation Generator: CAIN Crossing angle: 14 mrad B-field: 3, 3.5, and 4T Machine parameters: Nominal option in 2005
2005 parameter Recent parameter*
Beta function at IP x (m) 2.1e-2 2.0e-2
Beta function at IP y (m) 4.0e-4 4.0e-2
Beam size at IP x (m) 6.55e-7 6.4e-7
Beam size at IP y (m) 5.7e-9 5.7e-9
Disruption parameter Dx 1.62e-1 1.7e-1
Disruption parameter Dy 1.85e+1 1.91+1
Beamstrahlung parameter Uave 0.046 0.047
Beamstrahlung power Pbeamstrahlung (W) 2.48e+5 2.4e+5
Number of beamstrahlung photons N 1.257 1.29
* Talk by Andrei Seryi at SiD Workshop at SLAC, Jan. 2008
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Distribution of p.b. core
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Design criteria
Pair background core should not hit the beam pipe Somewhat realistic assumption for the gaps and
spaces (G1, G2, L1, L2)
Core of Pair-Background
L2
G2
L1
G1
Si waferBeam Pipe
R2
Z2
R1
Z1
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Results
Assumption G1 = 2 mm G2 = 4 mm (core-pipe:2mm and pipe-ladder:2mm) L1 = 5 mm L2 = 20 mm
Minimum radius
3 T 3.5 T 4 T
R1 (mm) 12 11 10.5
Z1 (mm) 45 42 40
R2 (mm) 17 16 15
Z2 (mm) 76 72 68