Automotive 1.0A Variable Output LDO...

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.

1/21 TSZ02201-0R6R0AN00240-1-22012.8.31 Rev.001© 2012 ROHM Co., Ltd. All rights reserved. www.rohm.com

TSZ22111･14･001

Datasheet

Automotive 1.0A Variable Output LDO Regulator BDxxGC0MEFJ-M ●General Description

BDxxGC0MEFJ-M is a LDO regulator with output current 1.0A. The output accuracy is ±1% of output voltage. With external resistance, it is available to set the output voltage at random (from 1.5V to 13.0V).It has package type: HTSOP-J8. Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.

●Features

High accuracy reference voltage circuit Built-in Over Current Protection circuit (OCP) Built-in Thermal Shut Down circuit (TSD) With shut down switch AEC-Q100 Qualified

●Key Specifications Input power supply voltage range: 4.5V to 14.0V Output voltage range(Variable type): 1.5V to 13.0V Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V

5.0V/6.0V/7.0V/8.0V/9.0V/10V/12V Output current: 1.0A (Max.) Shutdown current: 0μA(Typ.) Operating temperature range: -40℃ to +105℃

●Typical Application Circuit

●Package (Typ.) (Typ.) (Max.) HTSOP-J8 4.90mm x 6.00mm x 1.00mm

HTSOP-J8

R1

VO VCC

EN

GND FINR2

FB

COUTCIN

CIN,COUT : Ceramic Capacitor

VO VCC

EN

GND FIN

VO_S COUTCIN

CIN,COUT : Ceramic Capacitor

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BDxxGC0MEFJ-M Datasheet

TSZ02201-0R6R0AN00240-1-22012.8.31 Rev.001

© 2012 ROHM Co., Ltd. All rights reserved. www.rohm.com

TSZ22111･15･001

●Ordering Information

B D x x G C 0 M E F J - M E 2

Part Number

Output voltage 00:Variable 15:1.5V 18:1.8V 25:2.5V 30:3.0V 33:3.3V 50:5.0V 60:6.0V 70:7.0V 80:8.0V 90:9.0V J0:10.0V J2:12.0V

Voltage resistance G:15V

Output current C0:1.0A

Automotive“M”:M Series

Package EFJ:HTSOP-J8

Packaging and forming specification E2:Emboss tape reel

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●Block Diagram BDxxGC0MEFJ-M

BDxxGC0MEFJ-M (Fixed type)

●Pin Configuration ●Pin Description

Pin No. Pin name Pin Function 1 VO Output pin 2 FB/Vo_s Feedback pin 3 GND GND pin 4 N.C. Non Connection (Used to connect GND or OPEN state.) 5 EN Enable pin 6 N.C. Non Connection (Used to connect GND or OPEN state.) 7 N.C. Non Connection (Used to connect GND or OPEN state.) 8 VCC Input pin

Reverse FIN Substrate(Connect to GND)

Fig.1 Block Diagram

Fig.2 Block Diagram (Fixed type)

FIN

GND

EN Ceramic

Capacitor

VO

VCC

VO_S

Ceramic Capacitor ≧ 1.0μF

≧ 1.0μF

4.5～14.0V

TSD

8

1

3

5

2

OCP

SOFT START

GND

EN TSD

8

1

3

5

2

OCP

SOFT START

Ceramic Capacitor

Vo

VCC

FB

R1

R2

Ceramic Capacitor ≧ 1.0μF

≧ 1.0μF

1.5V to 13.0V

(VO+0.90) to 14.0V

TOP VIEW

VO

GND

N.C.

N.C.

N.C.

EN

VCC

FB/Vo_s

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●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Limits Unit

Power supply voltage VCC 15.0 *1 V EN voltage VEN 15.0 V Power dissipation HTSOP-J8 Pd*2 2110 *2 mW Operating Temperature Range Topr -40 to +105 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Junction Temperature Tjmax +150 ℃

*1 Not to exceed Pd *2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)

●Recommended Operating Ratings (Ta=25℃)

Parameter Symbol Min. Max. Unit Input power supply voltage VCC 4.5 14.0 V EN voltage VEN 0.0 14.0 V Output voltage setting range VO 1.5 13.0 V Output current IO 0.0 1.0 A

●Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)

Parameter Symbol Temp Min. Typ. Max. Unit Conditions 25℃ - 0 5 Circuit current at shutdown

mode ISD

-40~105℃ - - 5 μA VEN=0V, OFF mode

25℃ - 600 900 Bias current ICC

-40~105℃ - - 1200 μA

25℃ - 25 50 Line regulation Reg.I

-40~105℃ - - 50 mV VCC =( Vo+0.9V )→14.0V

25℃ - 25 75 Load regulation Reg IO

-40~105℃ - - 75 mV IO=0→1.0A

25℃ - 0.6 0.9 Minimum dropout Voltage VCO

-40~105℃ - - 1.2 V VCC=5V, IO=1.0A

25℃ 0.792 0.800 0.808 Output reference voltage (Variable type)

VFB -40~105℃ 0.776 - 0.824

V IO=0mA

25℃ VO×0.99 VO VO×1.01 Output voltage(Fixed type) VO -40~105℃ Vo×0.97 Vo VO×1.03

V IO=0mA

25℃ 0 - 0.8 EN Low voltage VEN(Low)

-40~105℃ 0 - 0.8 V

25℃ 2.4 - 14.0 EN High voltage VEN(High)

-40~105℃ 2.4 - 14.0 V

25℃ 1 3 9 EN Bias current IEN

-40~105℃ - - 9 µA

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●Typical Performance Curves (Unless otherwise noted, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)

IO IO

VEN

VCC

VO

VEN

VCC

T.B.D

T.B.D T.B.D

Vo 50mV/div

Io 1A/div

Vo50mV/div

Io1A/div

10usec/div 10usec/div

Vo 50mV/div

Io 1A/div

10usec/div 2msec/div

Vo50mV/div

Io1A/div

Fig.6 Transient Response

(1.0→0A) Co=1µF,Ta=-40℃


(0→1.0A) Co=1µF,Ta=105℃


(0→1.0A) Co=1µF,Ta=-40℃


(0→1.0A) Co=1µF,Ta=25℃

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(1.0→0A) Co=1µF,Ta=25℃

2msec/div

Vo 50mV/div

Io 1A/div

2msec/div

Vo50mV/div

Io1A/div


(1.0→0A) Co=1µF,Ta=105℃

Vcc 2V/div

Vo 2V/div

Fig.9 Input sequence 1 Co=1µF,Ta=-40℃

1msec/div

Vcc2V/div

Vo2V/div

VEN2V/div

1msec/div

Fig.10 Input sequence 1 Co=1µF,Ta=25℃

VEN 2V/div

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Vcc 2V/div

Vo 2V/div

1msec/div


40msec/div

Vcc2V/div

Vo2V/div

Fig.12 OFF sequence 1 Co=1µF,Ta=-40℃

Vcc 2V/div

Vo2V/div

Fig.13 OFF sequence 1 Co=1µF,Ta=25℃

40msec/div 40msec/div

Vcc2V/div

Fig.14 OFF sequence 1

Co=1µF,Ta=105℃

VEN 2V/div

VEN2V/div

VEN 2V/div

VEN2V/div

Vo 2V/div

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VEN 2V/div

Vcc 2V/div

Vo 2V/div

1msec/div

Fig.15 Input sequence 2 Co=1µF,Ta=-40℃

Vcc2V/div

Vo2V/div

1msec/div


VEN 2V/div

Vcc 2V/div

Vo 2V/div

1msec/div


VEN2V/div

Vcc2V/div

Vo2V/div

Fig.18 OFF sequence 2 Co=1µF,Ta=-40℃

40msec/div

VEN2V/div

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VEN 2V/div

Vcc 2V/div

Vo 2V/div

VEN2V/div

Vcc2V/div

Vo2V/div

40msec/div 40msec/div

Fig.19 OFF sequence 2 Co=1µF,Ta=25℃

Fig.20 OFF sequence 2

Co=1µF,Ta=105℃

4.8

4.9

5.0

5.1

5.2

-40 -15 10 35 60 85

Ta [°C]

Vo

[V]

105

Fig.21 Ta-VO (IO=0mA)

Ta [℃]

VO [V

]

400

500

600

700

800

-40 -15 10 35 60 85

Ta [°C]

ICC [

µA]

105

Fig.22 Ta-ICC

Ta [℃]

VO [V

]

4.8

4.9

5.0

5.1

5.2

-40 -15 10 35 60 85

Ta [°C]

Vo

[V]

105400

500

600

700

800

-40 -15 10 35 60 85

Ta [°C]

ICC [

µA]

105

5.2

5.1

5.0

4.9

4.8

800

700

600

500

400

-40 -15 10 35 60 85 105 -40 -15 10 35 60 85 105

Ta [°C] Ta [°C]

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Fig.24 Ta-IEN

Fig.25 IO-VO

VO[V

]

IO[A]

0.0

0.2

0.4

0.6

0.8

1.0

-40 -15 10 35 60 85

Ta [°C]

ICC [

µA]

105

Fig.23 Ta-ISD

(VEN=0V)

Ta [℃]

I SD [µ

A]

0.0

2.0

4.0

6.0

8.0

-40 -15 10 35 60 85

Ta [°C]IC

C [

µA]

105

I EN [µ

A]

Ta [℃]

0.0

1.0

2.0

3.0

4.0

5.0

0 2 4 6 8 10 12 14

VCC [V]

I SD [

uA]

Fig.26 VCC-ISD

(VEN=0V)

VCC [V]

I SD [µ

A]

Temp=-40°C Temp=25°C Temp=105°C

VO[V

]

Io [A]

0 0.2 0.4 0.6 0.8 1

5.2

5.1

5.0

4.9

4.8

1.0

0.8

0.6

0.4

0.0

0.2

8.0

6.0

4.0

2.0

0.0

-40 -15 10 35 60 85 105 -40 -15 10 35 60 85 105

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Fig.29 OCP

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0 0.5 1 1.5 2 2.5

IO [A]

V O [

V]

Fig.30 IO-ICC

Fig.27 VCC-VO (IO=0mA)

Fig.28 TSD (IO=0mA)

Vo[V

]

IO [A]

VO

[V]

VO[V

]

Ta[℃]

0.0

2.0

4.0

6.0

0 2 4 6 8 10 12 14

VCC [V]

V O [

V]

Temp=105°C Temp=25°C Temp=-40°C

400

500

600

700

800

900

0 0.2 0.4 0.6 0.8 1

IO [A]

I CC [

µA]

Temp=105°C Temp=25°C

Temp=-40°C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0 0.5 1 1.5 2 2.5

Io [A]

Vo

[V] Temp=105°C

Temp=25°C Temp=-40°C

800

700

600

500

400

900

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Fig.31 ESR Safety area

Fig.32 PSRR (IO=0mA)

IO [A]

PS

RR

[dB

] V

drop

[V]

T.B.D

ESR – IO characteristics

0.01

0.10

1.00

10.00

0 0.2 0.4 0.6 0.8 1

Io [A]

ES

R [Ω

]

Safety Area

Fig.31 ESR Safety area

0.2

0.3

0.4

0.5

0.6

-40 -15 10 35 60 85

Ta [°C]

Vdr

op [

V]

105

Ta [°C]

Vdr

op [V

]

Fig.33 Ta-Vdrop

(VCC=6V, IO=1A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.2 0.4 0.6 0.8 1

Io [A]

Vdr

op [

V]

Fig.34 Minimum dropout Voltage 1

（VCC=4.5V）

-40 -15 10 35 60 85 105


Temp=-40°C

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0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.2 0.4 0.6 0.8 1

Io [A]

Vdr

op [

V]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.2 0.4 0.6 0.8 1

Io [A]

Vdr

op [

V]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.2 0.4 0.6 0.8 1

Io [A]V

drop

[V

]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.2 0.4 0.6 0.8 1

Io [A]

Vdr

op [

V]


（VCC=6.0V）


（VCC=8.0V）


（VCC=10.0V）


（VCC=12.0V）


Temp=-40°C

Temp=105°CTemp=25°C

Temp=-40°C


Temp=-40°C


Temp=-40°C

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●Power Dissipation

◎HTSOP-J8

Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed temperature limits, and thermal design should allow sufficient margin from the limits.

1. Ambient temperature Ta can be no higher than 105℃. 2. Chip junction temperature (Tj) can be no higher than 150℃.

Chip junction temperature can be determined as follows:

Most of the heat loss that occurs in the BDxxGC0MEFJ-M is generated from the output Pch FET. Power loss is determined by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage and the output current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing in mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in the BDxxGC0MEFJ-M make certain to factor conditions such as substrate size into the thermal design.

Power consumption[W] = Input voltage (VCC) - Output voltage (VO) ×IO(Ave)

Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,

Power consumption[W] = 5.0V - 3.3V ×0.1A

=0.17W

Calculation based on ambient temperature (Ta) Tj=Ta+θj-a×W

＜Reference values＞

1-layer substrate (copper foil density 0mm×0mm) 2-layer substrate (copper foil density 15mm×15mm) 2-layer substrate (copper foil density 70mm×70mm)

4-layer substrate (copper foil density 70mm×70mm) Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)

θj-a: HTSOP-J8 153.2℃/W 113.6℃/W 59.2℃/W 33.3℃/W

Measure condition: mounted on a ROHM board, and IC Substrate size: 70mm × 70mm × 1.6mm (Substrate with thermal via) ・ Solder the substrate and package reverse

exposure heat radiation part ① IC only θj-a=249.5℃/W ② 1-layer（copper foil are :0mm×0mm） θj-a=153.2℃/W ③ 2-layer（copper foil are :15mm×15mm） θj-a=113.6℃/W ④ 2-layer（copper foil are :70mm×70mm） θj-a=59.2℃/W ⑤ 4-layer（copper foil are :70mm×70mm） θj-a=33.3℃/W

Pow

er D

issi

patio

n :P

d [W

]

0 25 50 75 100 125 150

0

2.0

3.0

4.0

①0.50W

周囲温度:Ta [℃]

1.0

①0.50W

②0.82W

③1.10W

④2.11W

⑤3.76W

Ambient Temperature :Ta [℃]

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●Input-to-Output Capacitor It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND. A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes improvement of characteristics by load change. However, please check by mounted on a board for the actual application. Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity decreases gradually by using conditions. For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.

●Equivalent Series Resistance ESR (ceramic capacitor etc.)

Please attach an anti-oscillation capacitor between VO and GND. Capacitor usually has ESR(Equivalent Series Resistance), and operates stable in ESR-IO range, showed right. Generally, ESR of ceramic, tantalum and electronic capacitor etc. is different for each, so please be sure to check a capacitor which is going to use, and use it inside the stable operating region, showed right. Then, please evaluate for the actual application.


0.01

0.10

1.00

10.00

0 0.2 0.4 0.6 0.8 1Io [A]

ES

R [Ω

]


Safety Area

DC Bias Voltage [V]

Ceramic capacitor capacity – DC bias characteristics (Characteristics example)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

10

0 1 2 3 4

Rated Voltage：10V B1 characteristics

Rated Voltage：4V X6S characteristics

Cap

acita

nce

Cha

nge

[%]

Rated Voltage:10VF characteristics

Rated Voltage：6.3V B characteristics

B characteristics Rated Voltage：10V

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●Evaluation Board Circuit ●Evaluation Board Parts List

●Board Layout

･Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern. Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane, please use several through hole.

・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as possible. Please be careful in wiring drawing

・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency. ・For output voltage setting

Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2. （The use of resistors with R1+R2=1k to 90kΩ is recommended）

Designation Value Part No. Company Designation Value Part No. CompanyR1 43kΩ MCR01PZPZF4302 ROHM C4 ‐ ‐ ‐ R2 8.2kΩ MCR01PZPZF8201 ROHM C5 1µF CM105X7R105K16AB KYOCERAR3 ‐ ‐ ‐ C6 R4 ‐ ‐ ‐ C7 ‐ ‐ ‐ R5 ‐ ‐ ‐ C8 ‐ ‐ ‐ R6 ‐ ‐ ‐ C9 ‐ ‐ ‐ C1 1µF CM105B105K16A KYOCERA C10 ‐ ‐ ‐ C2 ‐ ‐ U1 ‐ BD00GC0MEFJ-M ROHM C3 ‐ ‐ U2 ‐ ‐ ‐

Vo = VFB× R1+R2

R2

N.CGND

FB N.C

N.C.

VO

2

VO

C7

3

4

7

5

U1

8

C1

C2

C3

R1

R2

C6

C5

1 VCC

6

EN

GND

SW1

EN

FIN

VCC

VO

EN GND

( VCC VIN ) CIN

R1

R2

COUT

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●I/O Equivalent Circuits (Output Voltage Vairable type) ●I/O Equivalent Circuits (Output Voltage Fixed type)

8pin (VCC) / 1pin (VO) 2pin (FB) 5pin (EN)

2pin (FB) 8pin (VCC)

1pin (VO)

5pin (EN)

1MΩ

2MΩ

8pin (VCC) / 1pin (VO) 2pin (VO_S) 5pin (EN)

2pin (VO_S)

8pin (VCC)

1pin (VO)

5pin (EN)

1MΩ

2MΩ

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●Operational Notes (1). Absolute maximum ratings

An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.

(2). Connecting the power supply connector backward

Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power supply lines. An external direction diode can be added.

(3). Power supply lines

Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.

(4). GND voltage

The potential of GND pin must be minimum potential in all operating conditions. (5). Thermal design

Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.

(6). Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together.

(7). Actions in strong electromagnetic field

Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.

(8). ASO

When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO. (9). Thermal shutdown circuit

The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed.

(10). Testing on application boards

When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC.

TSD ON Temperature[℃] (typ.) Hysteresis Temperature [℃] (typ.) BDxxGC0MEFJ-M 175 15

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(11). Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND(P substrate) voltage to an input pin, should not be used.

(12). Ground Wiring Pattern. When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either.

Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority.

Resistor Transistor (NPN)

N

N N P+ P+ P

P substrate GND

Pin A

N

N P+P+P

P substrate GND

Parasitic element

Pin B C B

E

N

GND

Pin A

Pin B

Other adjacent elements

E

B C

GND Parasitic element

Parasitic element

Parasitic element

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TSZ02201-0R6R0AN00240-1-22012.8.31 Rev.001


TSZ22111･15･001

●Physical Dimension Tape and Reel Information ●Marking Diagram

(Unit : mm)

HTSOP-J8

0.08 S

0.08 M

S

1.0M

AX

0.85

±0.0

5

1.27

0.08

±0.0

8 0.42+0.05-0.04

1.05

±0.2

0.65

±0.1

5

4°+6°−4°

0.17+0.05-0.03

2 3 4

568

(MAX 5.25 include BURR)

7

1

0.545

(3.2)

4.9±0.1

6.0±

0.2

(2.4

)

3.9±

0.1

1PIN MARK

∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction of feed The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

( )

Direction of feed

Reel1pin

HTSOP-J8 (TOP VIEW)

x x G C 0 M

Part Number Marking

LOT Number

1PIN MARK

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TSZ02201-0R6R0AN00240-1-22012.8.31 Rev.001


TSZ22111･15･001

●Revision History Date Revision Changes

31.Aug.2012 001 New Release

DatasheetDatasheet

Notice - SS Rev.002© 2014 ROHM Co., Ltd. All rights reserved.

Notice Precaution on using ROHM Products

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA

CLASSⅢ CLASSⅢ

CLASSⅡb CLASSⅢ

CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the

ROHM representative in advance. For details, please refer to ROHM Mounting specification

DatasheetDatasheet

Notice - SS Rev.002© 2014 ROHM Co., Ltd. All rights reserved.

Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

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4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

DatasheetDatasheet

Notice – WE Rev.001© 2014 ROHM Co., Ltd. All rights reserved.

General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

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