Aspects of Plating for Organic Substrates - Cornell...
Transcript of Aspects of Plating for Organic Substrates - Cornell...
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RHM 1
Aspects of Platingfor Organic Substrates
Dr. Roy [email protected]
Endicott Interconnect TechnologiesEndicott, NY 13760
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RHM 2
OverviewGeneral fabrication strategies
Circuitization:Subtractive processingSemiadditive processingBuild-up
Aspects of selected processesPlating Fundamentals/SystemsEtching
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RHM 3
General ReferencesMicroelectronics Packaging Handbook
Tummala and Rymaszewski, Eds
o Electrochemical Fundamentals/Modeling Corrosion:
First edition Chapter 5, Second Edition I-436ff
o Additive and Subtractive Circuitization Processes:
First Edition Chapter 12, Second Edition III-304ff
Principles of Electronic Packaging
Seraphim, Lasky and Li, Eds.
Chapter 16 General Plating -- both electroless and electrolytic
Chapter 18 Metal Etching
Also see:
M. Paunovic, M. Schlesinger, Fundamentals of Electrochemical Deposition
G. Mallory, J. Hajdu, Eds, Electroless Plating
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RHM 4
Plating used to make conducting connections x, y and z and to provide surface finishes for soldering or corrosion prevention.
Circuit boards (organic substrate): Signal traces, through vias (some v. high aspect ratio), blind vias. Employs catalysts/electroless copper and lamination most often.Two sided processing.
Wafers (inorganic substrate): Traces ~ trenches and blinds.Initiated with dry deposition.One sided processing.
Flex (organic substrate): Signal traces, through vias, blind vias.Most often uses sputtered metals for first layer and commoning.Commonly one sided, can be two sided processing.
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RHM 5
Circuitization Sequences:Subtractive or print and etchSemiadditiveBuild-up
Subtractive Processing:Particularly useful for one sided circuitry.May be coupled with full panel plating of vias.Simplest process sequence, line shapes not as desirable
Copper clad substrate
Drill through viaIf 2 sided connection
Dielectric
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RHM 6
Sputter commoning layer forthrough via
Full panel electrolytic copper plate. Format = mounted piece or roll
Apply/expose/develop photoresist—tent or plug holes
Etch copper, strip resist
Subtractive, continued
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RHM 7
Semiadditive Processing
Often used for processing requiring electrolytic surface finishes.
Fine line applications for chip carriers and flex.
More complex processing than subtractive.
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RHM 8
For plating, need thin copper as an electrical commoninglayer.
For flex this is most often provided with sputtered copper over a “tie” layer of Ti, Cr, Nichrome, etc. put down for adhesion.
Often the substrate dielectric is activated with a dry process to create surface active functional groups to bond to the tie layer. This can be done in a roll format.
Example: Polyimide (Kapton H)
untreated 20-24 g/mm for Cr tie layer
O2 MW plasma (reactive neutrals) 16 g/mm for Cr
O2 dc glow (neutrals+ions+photons) 50-67 g/mm for Cr
Ar ion beam (ions only) 53-58 g/mm for Cr
Concommitant water wetting angle reduction observed.
(Egitto and Matienzo, IBM J Res Devt, 1994)
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RHM 9
Drill
Adhesion promoteSputter tie metal,Sputter commoning copper
Semiadditive
Organic substrate
Apply, expose,develop photoresist
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RHM 10
SemiadditivePattern electroplatecopper
Strip photoresistPlate protective finish
Ni/Au, Sn, Sn/Pb
Flash etch commoningand tie layers
Strip photoresistEtch commoning and
tie layers
Minimizes attack on Cu
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RHM 11
Interconnect Schemes:
1. Core and subcomposite laminationinterconnect by through hole drilling/plating.Most common for PWB.Leaves stubs at through hole interconnects
2. Build-up processing.Often used for organic chip carrier applications.Exploits laser drilling or photovia formation.Sequential process requires high yield in later process steps.
3. Z-interconnect.
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RHM 12
External copper
External copper
Prepreg
Prepreg
Prepreg
Circuitized core
Circuitized core
Laminate, drill
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RHM 13
DesmearPlateCircuitize
Stub Blocked wiring channel Backdrillingx, y, z challenge
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RHM 14
Build-up on core or flex, two sided shown
Laminate dielectric, etch or peel carrier if needed.
Laser drill, 25-100 micron vias
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RHM 15
Sputter, photo, plate, strip, flash etch
Or sputter, plate, photo, etch, strip
“1 + 1”
“2 + 2”
RepeatWiring channel not blocked
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RHM 16
Parallel processing allows culling of defective cores—esp. importantas the surface area of the workpiece increases.
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RHM 17
Types of Plating
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RHM 18
General Principles of Plating for Electrolytic, Electrolessand Immersion Plating
Main principle of plating, regardless of type:Some source supplies electrons for the reduction of
metal ions from solution.
Metal deposition is an electrochemical reduction
Mz+ + Ze- ---- M0
Metal ion electrons deposited metal
Metal ions in solution are surrounded by a shell of molecules or ionscalled “ligands”. During the deposition process these leavethe vicinity of the metal ion. The ligands may be water molecules:
Cu(H2O)62+
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RHM 19
Schematic Representation of Metal Deposition
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RHM 20
Controlling FactorsThermodynamics:
The change in free energy, G must be negative.
The free energy change can be related to the change in
the electrochemical potential for the overall reaction.
G = -nf ErxnChemical/Electrochemical Kinetics:
The kinetics of the reactions must be fast enough to
yield a substantial deposition rate.
Mass transfer/Hydrodynamics:Material must reach the plating surface (or leave the surface) by
migration, diffusion, or solution flow
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RHM 21
The rate and overall performance of a plating system can be dependent on:
chemical composition (ligands, pH, etc)the more strongly complexed an ion, the harder it is to reducepH can affect complexation and overall chemical and electrochemical reactions
physical properties (temperature, agitation, or mass transporthigh temperature and agitation results in higher rates and uniformity
electrochemical properties of the metal ion the standard potential, E0
the charge on the ion, Zthe rate of electron transfer
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RHM 22
Silver ion is easier to reduce than cupric ion. If a solution contains both metals, silver will be plated out first, since the std potential for silver is less negative than for cupric ion. Also, if there are no side reactions, it will take twice the number of electrons to reduce the same number of copper ions as silver ions.
Cu2+ + 2e Cu0 E0 = +0.337 V
Ag+ + e Ag0 E0 = +0.799 V
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RHM 23
Basic Principles of Electroplating
Faraday’s law: The mass of the metal plated is directlyrelated to the number of coulombs passed through thesolution. Electroplating is typically done at constantcurrent, so that
number of coulombs = I x t
related to number of moles by Faraday constant and the number of electrons per mole of deposited metal:
Moles = coulombs/(F x n) = I x t/(F x n)Weight of deposit = moles x atomic weight
Faraday’s law assumes 100% current efficiency, i.e.,the simple stoichiometry between electrons and metal ions described by the plating reaction.
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RHM 24
Current Efficiency: the percentage of the current which goesto the useful plating reaction.
Reduction of protons to hydrogen gas is a common side reaction—car battery.
Cell Overpotential: The voltage required beyond the thermodynamic potential to reach a particular current.
Plating systems are set up to have low overpotential to minimize side reactions and low current efficiencies.
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RHM 25
Electrolytic plating uses dc current and other wave forms to deposit the metal from solution
Flex circuits may also be processed in a roll to roll format.
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RHM 26
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RHM 27
Advances in additives and current wave formshave now allowed the filling of blind microvias
O Bubble undesirable, although not reliability issue.
O Copper filling of blind vias at lower build-up layersenables vertical stacking.
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RHM 28
Periodic reverse pulse plating has increased the productivityand especially the throwing power of electrolytic acidcopper plating baths.
Time
Cur
rent
Brief anodic spike
Zero current
Cathodic plating
See, for example G. Milad, Printed Circuit Fabrication, 20, 1997, p36
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RHM 29
A myriad of variables available to the plater:o current settingso pulse durationso frequencyo additive concentrationso agitation
Needs to be optimized for the application—high aspect ratiopths not the same as blind vias not the same as fine lines.
Proper balance of wave form and additives needs to be established,process control of the additives becoming more important.
R. Edwards, Printed Circuit Design and Manufacture, Jan, 2004, pp2-5.
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RHM 30
George Allardyce, Mark Lefebvre, Hideki Tsuchida, Masaru Kusaka, and Shinjiro Hayashi, Circuitry, February, 2004.
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RHM 31
Proper balance of wave form and additives needs to be established,process control of the additives becoming more important.
R. Edwards, Printed Circuit Design and Manufacture, Jan, 2004, pp2-5.
Poor thermal cycling performance.
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RHM 32
New chemistries have come from the need to fill trenchesin silicon fabrication. The microvias in chip carriersand flex packaging now reaching the dimensions where similar mechanisms are operative.
Strongly adsorbing leveller, suppressing rate at surface
High surface concentration
Low leveller concentration in cavity
P. M. Vereecken, R. Binstead, H. Deligianni, P. Andricacos,IBM J. Res. & Dev., 49, 2005, pp3-18.
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RHM 33
T. Moffat, D. Wheeler, M. Edelstein, D. Josell, IBM J. Res. & Dev., 49, 2005, pp19-36.
Curvature-enhanced accelerator coverage (CEAC) mechanism:
Workpiece is predipped into a plating catalyst.
Geometric effects cause the catalyst to increase in concentrationat acute curves as the plating proceeds. The catalystoverrides the action of a suppressor, leading to superfillingof small vias. Plating rate vs. additive concentrations critical.
Build-up of catalyst
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RHM 34
Electroless plating systems involve the reduction of a metal ion by a chemical agent.
Example:
Formaldehyde used as reductant in most electroless copper baths
Cu2+ + 2H2CO + 4OH- Cu + 2HCOO- + 2H2O + H2
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RHM 35
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RHM 36
Electroless Surface Finish Systems
Electroless nickel/phos + immersion gold at times gives a phosphorus-rich brittle interface. This is called ‘black pad’.
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RHM 37
Uniform nickel/phos
Au+ Ni2+
Immersion Plating: Displacement reaction in which the substratemetal dissolves as the solution metal deposits.
Thin coatings only. “Self-limiting” is really only great slowing of rate.
Nio + 2Au+ Ni2+ + 2Auo
Phosphorus does not dissolve and becomes concentrated at surface.
IAuP rich zone
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RHM 38
Etching: Removal of a material from a substrate by dissolution.
For metals, this is done by use of an oxidizingagent in solution, and is the oppositeof the plating reaction.
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RHM 39
Schematic Representation of Metal Deposition
Etching
+
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RHM 40
Key Factors for Wet Etching
Thermodynamics: Cell reaction must be favorable
Kinetics: Rate must be sufficient to be completed withina reasonable time.
Hydrodynamics: Transport of the solution to and from the surface must be efficient to provide oxidizing agentand remove metal ions.
Anisotropy: Rate of reaction in various directions can be different depending on the hydrodynamics and additives.
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RHM 41
Thermodynamic example: Can copper be etched with ferric chloride in hydrochloric acid solution?
Examine the cell potentials:
Cu2+ + 2e Cu0 E = +0.337 V
Fe3+ + e Fe2+ E = + 0.770 V
Net reaction: Cu0 + 2Fe3+ Cu2+ + 2Fe2+
E = Ered – Eox = 0.770 – 0.337 = +0.433 V
Potential change positive free energy change negativereaction spontaneous as written, so that etching occurs
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RHM 42
Kinetics:Four general steps in an etching reaction—the slowestdetermines the rate of reaction.
Transport of the oxidant to the surface (hydrodynamic/diffusion)
Electron transfer reaction—must have electrons move from the surface to the oxidizing agent.
Movement of the metal ion and reduced etchant from the surface
Complexation of the metal ion (avoid passivation at the surface)
Ti + 4H+ Ti(IV) + 2H2 in sulfuric acid thermodynamicallyfavorable, but blocked by TiO2 onthe surface.
Ti + 4H+ + 6F- TiF62- + 2H2 in HF solution, the titanium
is rapidly etched due to complexation by fluoride ion.
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RHM 43
Etching and Photoresist or Other Etch Stops:
Anisotropic etching—high etch wall angleso high fluid impingemento banking agents
Isotropic etching—low etch wall angleso lower fluid impingemento promoted by thicker photoresist
Some Elements of Etching.
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RHM 44
Subtractractive resolution limited by o photoresist thickness/resolution,
conventional rule of thumb was 1:1o copper thicknesso etch tooling
Line and space needs for chip carriers and flexible connectorsnow driving down to 25 micron line and space, with inquiries coming in at 10-15 microns for flex.
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RHM 45www.nichingo-morton.co.jp
M. Oda, R. Barr, A. Hinata, C. Keil, T. Yamamoto
High resolution photoresists becoming available with higher than 1:1 aspect ratio of the line channels. Resist below is 25 micron thick.Drives some of the geometry issues into etching and plating.
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RHM 46