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![Page 1: ASICs for high temperatures and harsh environments IRTG, Bergen 17 October 2012 SINTEF ICT Joar Martin Østby Senior Research Scientist joar.m.ostby@sintef.no.](https://reader036.fdocuments.us/reader036/viewer/2022081519/56649d0e5503460f949e352f/html5/thumbnails/1.jpg)
ASICs for high temperatures and harsh environments
IRTG, Bergen
17 October 2012
SINTEF ICT
Joar Martin Østby
Senior Research Scientist
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Outline1. Definitions
2. ICs in general
3. High temperature in generala) Market
b) Challenges
c) Substrate, connectivity and integration
d) Semiconductor technologies
e) Integrated circuits (ASICs)
f) Discrete components: sensors and devices
g) Standard components
4. Activity at SINTEFa) ASICs
b) Harsh environment projects
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1. DefinitionsTemperature rangeStandard/commercial temperature range: 0°C-70°CIndustrial: 0°C-85°CMilitary temperature range: -40°C-125°CHigh temperature (HT): > 125°CVery high temperature > 250°CLow temperature (LT) < -40°CVery low temperature < -150°CExtremely low temperature < 40°K
HTE: High Temperature Electronics
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Electronic operational range
Total reported temperature range: -270°C - 700°C Lower end (-270°C): Si, Ge, GaAs Higher end (700°C): Diamond Schottky Diode, SiC
MOSFET (650°C), Si and GaAs ICs (400-500°C). Operational range of same component: -270°C to 400°C
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What are the benefits of ICs? Small size Less parts Simple logistics Low weight Higher frequencies/clock rates Increased reliability Easier to protect in harsh environments Low power consumption (energy consumption and heat) Less noise sensitivity to most types of noise Less noise emission Lower price in medium and higher volumes Improved performance/price ratio Better hiding of design solutions Better total system performance Increased flexibility (some functions can only be implemented in
ASICs)
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2. High temperature in general
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2.a Market
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Market is increasing but will continue to be a niche market Large majority of HT applications in the range 125°C-
200°C Main customers:
Automotive Avionics/Space Oil & Gas
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Market - Avionics
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Market - Avionics
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Market - Automotive
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Automotive – HT electronics requirements
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Market - Petroleum
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Oil & Gas – Operating conditions
Well depths: Oil and gas: 3-6 km Geothermal: 10km
Temperature range: Majority of oil wells are under 125°C with 80% < 150°C Only 2-3% are > 200°C Geothermal wells: 25°C to 400°C with most wells covered by 325°C
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Requirements for in-well systems
Passive and active electronics Reliability is # 1 (more important than cost)
Application areas Permanent in-well monitoring
<200°C with years of continuous operation Well logging systems (wireline operation)
<220°C with operation for some few days Drilling
<220°C with operation for 2-3 months Geothermal and steam assisted wells
> 300°C operation and years of operation
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Oil & Gas – Environment conditions
High temperature Low temperature Thermal cycling Moisture Hermeticity Residual stresses Vibration Shock Thermo mechanical effects Ionising radiation Aggressive chemical environments
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Metallization - Reliability
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HT influence on silicon devices
Physical temperature dependencies … Fermi level Intrinsic carrier density Carrier generation rate Carrier mobility
… is resulting in a change of … Conductance Transconductance Leakage current Diode voltage drop FET threshold voltage
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HT influence on silicon devices
Reliability Electro migration of conductors increases Chemical reactivity increases Diffusion of dopants and ohmic contacts
increases Dielectric breakdown strength decreases Mechanical stresses increases
Latch-up
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High Temperature Semiconductors
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High Temperature Semiconductors
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Semiconductors
Small Die with High Pad Count and/or High Power Density – Improved current density capabilities and higher operating temperature
Electrical properties of relevant semiconductors
Property Si GaAs 4H-SiC GaN AlN
Bandgap (eV) 1.12 1.43 3.26 3.4 6.1
Breakdown field (V/µm) 30 30 250 250 1200
Thermal conductivity (W/cm °K)
1.5 0.5 4.5 1.5 3.3
Saturated Velocity (cm/s)
1E7 1E7 2E7 1.5E-2.7E7
1.8E7
Electron mobility (cm2/V s)@2E17 cm-3
600 4000 400 1000-2000
Hole mobility (cm2/V s) 150 30
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X-FAB XI10 SOI-process Core
NMOS, PMOS, R and C 3 metal layers 90V drain-source voltage 5V gain-source
Optional Metal
Al 175°C Tungsten 225°C
High res poly Cap (90V) 0.13fF/µm²
(1cm² ~ 13nF)
1µm oxide layer 650µm handle wafer
Reduced Cpara reduced Pdyn
Reduced Ileak reduced Pstat
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Bulk and SOI cost examplesXFAB CMOS: Bulk (0.6umBiCMOS) and
SOI (1.0umCMOS) cost
0
10000
20000
30000
40000
50000
60000
0 20 40 60 80 100
Chip size in mm2
EU
R
Bulk MPW 5 dices
Bulk MLM 6 wafers
Bulk FMS 6 wafers
SOI MPW 5 dices
SOI MLM 6 wafers
SOI FMS 6 wafers
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HT IC manufacturersTechnology Manufacturer Max op. temp Product
CMOS AMD 175°C LSI standard
CMOS TI 200°C LSI standard
CMOS SOI Honeywell 175°C/225°C IC processhouse,LSI standard,ASIC
CMOS SOI X-Fab 175°C/225°C IC processhouse
(X-Fab) CISSOID 175°C/225°C SSI/MSI standard
(AMS/X-Fab/…) SINTEF 175°C/225°C LSI ASIC
SiC TranSicCREEInfineon
300°C Discrete
SiC Raytheon, UK 300/400°C SSI
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HT (200°C) and HV (600-800V) devices
UnitedSic 4H-SiC BJT(150°C, 600V), VJFET (200°C, 1200V) and Shottky
Diode (700V)
TranSIC (225°C 800V) SiC BJT, Si IGBT
BitCsic SiC NPN power (250°, 1200V)
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TX530: DSP, ADC’s, DAC’s, Dig I/O
-50°C to +200°C 16-bit TMS320F240 DSP core 16kw flash & 32kw SRAM Inte. RC osc 2.304MHz±1% 8 10-bit ADCs, 10µs 3 10-bit DACs PWM outputs
Applications Petroleum Aircraft Smart sensor applications
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3. Activity at SINTEF
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µPEK activity
Interconnects Wire bonding, die-attach, micro bumps (3D stacking)
Components Thick and thin film resistors Ceramic capacitors Microcontroller Diode laser Optical transmitter and receiver
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µPEK: ATMega88 Microcontroller
The Atmel ATmega88 selected because: Popular, modern 8-bit architecture. Low power consumption. Automotive version available,
specified to +125°C (+150°C). A lot of different variants, made in
the same process. Internal EEPROM and self-
programmable FLASH. Wide operating voltage range, 2.7
– 5.5V @ -55 – +125 (+150)°C.
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µPEK: Results ATMega 88
Operation limit around 180C. Latch-up observed at 185C
One component have survived 8 months operation at 180C without any signs of degradation.
Further testing of a number of components in parallel is required.
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µPEK: 7 years operation at 200C. Is it feasible?
Substrate metallization
Wire bonding
Integrated circuits
Die attach
Resistors
Capacitors ??
Use small capacitance valuesDerating is highly important!Use Class I (NP0) capacitors
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High Temperature Instrumentation for Oil Production
Temperatures: 0 - 200 ºC Pressure: 0 - 1000 bar Vibration, shock Aggressive liquids/gases Difficult/expensive to test
Environmental characteristics:
Logging-free Wells (LFW)
Advanced Production Logging (APL)
CasingStrain
Gamma Multiphase FlowmeterCentrifugal Level Gauge
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High Temperature (~200°C) at SINTEF
Started 1984, design of logging tool Characterisation of CMOS/BICMOS
technology for HT in 1988 First ASIC in 1992. Complex mixed
signal circuit working up to 275°C Almost all work related to tools for the
petroleum sector
Power
Rx/Tx
TOPSIDE UNIT
TMM
HTPOWER
TTC HTPOWER
ELS-001
Sensor#1
DOWNHOLE CONTROL MODULE
4km 1/4" downhole cable
13/km,100nF/km
single conductor local businside tool string
TTC
Communication unit
PT
Up to 6 control modules may be connected in series
Data transfer card
Sensors #2 - #6
Signal and power bus
(2 x 1/8" downhole cable)
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Library of high temperature ASICs
TMM Telemetry Master Module (long distance biphase telemetry Tx/Rx, system sync)
TTC Telemetry Tool Chip (time multiplexing, directly connected to single wire bus)
HTP High Temperature Power (serial regulator with built in reference voltage)
ELS Quartz oscillator control chip (four channel oscillator/mixer for quartz sensor interface)
CMC Capacitance Measurement Circuit (capacitance measurement, pF-nF, <1%, high res.)
/ A/D converter based on sigma-delta principle (A/D-converter diff. input +-1V, < 0.1%, low noise)
VFC Voltage to frequency converter SAC Spectrum Analyser Chip (not yet
fully verified) (spectrum analyzer chip 500Hz-50kHz)
The chips are designed for use at temperatures up to200°C. They may either be put together as a completesystem for remote measurements or be used separately.
Power
Rx/Tx
TOPSIDE UNIT
TMM
HTPOWER
TTC HTPOWER
ELS-001
Sensor#1
DOWNHOLE CONTROL MODULE
4km 1/4" downhole cable
13/km,100nF/km
single conductor local businside tool string
TTC
Communication unit
PT
Up to 6 control modules may be connected in series
Data transfer card
Sensors #2 - #6
Signal and power bus
(2 x 1/8" downhole cable)
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NCM-eye Goal: Measure resistance in
rock Two ASICs designed for
200°C operation temperature Measurement setup:
100-200V AC is set up over the rock region to be inspected
Sensor front ends width very high input impedance (10-100G) measure the local voltage level
Voltage differences between neighbour pairs are found
Resulting values are converted into a digital format and feed into common buses
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AHZFE
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ADAQ4
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PharusITPhased Array Ultrasonic Transducers for Inspection of Tubing
EU project partners: SINTEF (Norway), Schlumberger - Ribound Product Center (France), Schlumberger - Doll Research (USA), CSIC (Spain), IMASONIC (France), TRONICO (France), STATICE (France) and BAM (Germany).
The primary objective of this ultrasonic imaging system was to perform non destructive testing in fluid filled oil wells. Typical specifications are 1400 bar and 175°C in harsh environments.
A variety of tasks are performed by the same system. E.g. locate rock fractures in the borehole wall or assess the quality of the cement placed in the annular space between cased steel pipe and rock wall.
The system architecture consists of a 2-D transducer array of 800 elements, a transmitter block, integrated front end receiver electronics, and FPGA circuits for controlling the array elements and performing the digital beam forming.
Publications and presentations: HITEN 2005 ESSCIRC 2005 IEEE International Ultrasonic Symposium 2005. IEEE Journal of Solid-State Circuits 2006
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PharusIT (BatASIC)
LNA12dB20dB
G3
VOUTN_LNA
VINN_PGA
G0 G1G2
VOUTN_PGA
VINN_ODA
PDN
VOUTP_LNA
VINP_PGA
VOUTP_PGA
VINN_LNA
VINP_LNA
VOUT_SD
VOUTN_ODA
VINN_SD
BuffersBuffers
OutputBuffer
PGA
Resistor
0dB6dB12dB18dB
ClockTiming
VREFL_SD
VREFH_SD
CLK_SYS
Buffers
GainDecoder
COND
VINP_ODA
ODA0dB
10dB
VDD_A
GND_A
VDD_D
GND_D
V_M
Global
BATASICUltrasound
Signal Processor
Sigma DeltaModulator(Second Order)
AmplitudeLimiter
CurrentMirrors
CurrentReference
RFB_LNA
LIMIT
VOUTP_ODA
VINP_SD
LNA12dB20dB
G3
VOUTN_LNA
VINN_PGA
G0 G1G2
VOUTN_PGA
VINN_ODA
PDN
VOUTP_LNA
VINP_PGA
VOUTP_PGA
VINN_LNA
VINP_LNA
VINN_LNA
VINP_LNA
VOUT_SD
VOUTN_ODA
VINN_SD
BuffersBuffers
OutputBuffer
PGA
Resistor
0dB6dB12dB18dB
0dB6dB12dB18dB
ClockTiming
VREFL_SD
VREFH_SD
CLK_SYS
Buffers
GainDecoder
GainDecoder
COND
VINP_ODA
ODA0dB
10dB
ODA0dB
10dB
VDD_A
GND_A
VDD_D
GND_D
V_M
Global
VDD_A
GND_A
VDD_D
GND_D
V_M
Global
VDD_A
GND_A
VDD_D
GND_D
V_MVDD_A
GND_A
VDD_D
GND_D
V_MVDD_A
GND_A
VDD_D
GND_D
V_MVDD_A
GND_A
VDD_D
GND_D
V_M
Global
BATASICUltrasound
Signal Processor
Sigma DeltaModulator(Second Order)
Sigma DeltaModulator(Second Order)
AmplitudeLimiter
CurrentMirrors
CurrentReference
AmplitudeLimiter
AmplitudeLimiter
CurrentMirrors
CurrentReference
RFB_LNA
LIMIT
VOUTP_ODA
VINP_SD
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High-temperature CMOS services The library of complex circuits
We have today a library of working circuits that we sell. Several of them have a rather general behaviour and could be used in different systems. These are rather complex circuits containing several thousand transistor equivalents each.
New ASICs We sell our high temperature
design competence and design new circuits according to specifications by the customer.
Simple standard cells We may design and sell simpler "standard"
cells. This may be a possibility for one customer or for several customers co-operating for the same specification. Possible circuits may be amplifiers, switches, memories etc.
Synthesized layout from customer input We may generate digital layouts with our
high temperature digital library from specifications given by the customer. The specification may be in some kind of high level language. Examples here are micro controllers delivered by the customers or from our contacts.
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SINTEF ICT, Dept. for Instrumentation Main focus is Instrumentation for demanding environments
Enabling technologies Micro-, opto- and nano-technologies are used to develop innovative integrated products and sensor systems in close collaboration with
Industrial partners Start-up and venture companies
Applications areas offshore, subsea, oil- and gas wells process industry automotive Health related ICT
Lean technology approach
100 200 300 400 500 600 7000
20
40
60
80
MeasuredEstimate
100 200 300 400 500 600 700
0
10
20
30 MeasuredEstimate
100 200 300 400 500 600 700
0
10
20
30
Different measurements
MeasuredEstimate
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Centrifugal Separator Level Gauge (2000)
3600 rpm Capacitive level detection:
- 0.1mm water/oil, - 0.3mm gas/oil
Non-contact signal transmission
Built-in power generation Operation at 0-100 ºC,
3600 g acceleration Operated successfully for >2
years
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SLG (Separator Level Gauge)
Measure pressure at several vertically separated points in the separator tank and combining the results mathematically to extract the water/oil/gas levels.
Measuring these small levels of change in pressure (<100pa) is achieved by using differential pressure sensors arranged in an vertical array.
The instrument has been tested for line pressure up to 196 bar and temperature up to 125°C Celsius.
Patented by Statoil Pressure certified by DNV (Det Norske Veritas
Certification AS) EX certified by Nemko Planned to be installed at Oseberg
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Noise Recording tool (Acoustic logging tool)
Main specifications
Well pressure 750 bar
Well temperature 175ºC
Frequency range 1 to 500Hz (fs = 1000 Hz)
Automatic gain 100, 120, 140,160 dB ref 20µPa max
Measurement resolution 8 bits ( 0.5%FS)
Memory capacity: 16 series of 64 (32) sec each
Power consumption < 20mA @ 5V
Signal read out Via wireline contact to PC
Length of tool Double pickup: 1,7m, single; 1,04m
Sensor element (patent pending)
FFT Plot
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Ongoing and future projects
Wireless in-well communication systems (semi-permanent – commercial phase)
In-well acoustic noise recording tool (wireline – commercial phase)
High reliability in-well instrumentation platform for the future (SINTEF strategic project - research)
Pipeline monitoring for integrity and corrosion control (permanent – subsea pilot phase)
In-well timer and release with very high accuracy (Research and test phase – permanent)
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