Array

Bulletin NoT07 EB0

(Mar.,2001)

• The information in this publication has been carefully checked and is believed to be accurate;however, no responsibility is assumed for inaccuracies.

• Sanken reserves the right to make changes without further notice to any products herein in theinterest of improvements in the performance, reliability, or manufacturability of its products.Before placing an order, Sanken advises its customers to obtain the latest version of the relevantinformation to verify that the information being relied upon is current.

• Application and operation examples described in this catalog are quoted for the sole purpose ofreference for the use of the products herein and Sanken can assume no responsibility for anyinfringement of industrial property rights, intellectual property rights or any other rights of Sankenor any third party which may result from its use.

• When using the products herein, the applicability and suitability of such products for the intendedpurpose or object shall be reviewed at the users’ responsibility.

• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrenceof failure and defect of semiconductor products at a certain rate is inevitable. Users of Sankenproducts are requested to take, at their own risk, preventative measures including safety designof the equipment or systems against any possible injury, death, fires or damages to the societydue to device failure or malfunction.

• Sanken products listed in this catalog are designed and intended for the use as components ingeneral purpose electronic equipment or apparatus (home appliances, office equipment, tel-ecommunication equipment, measuring equipment, etc.). Before placing an order, the user’swritten consent to the specifications is requested.When considering the use of Sanken products in the applications where higher reliability isrequired (transportation equipment and its control systems, traffic signal control systems orequipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearestSanken sales representative to discuss and obtain written confirmation of your specifications.The use of Sanken products without the written consent of Sanken in the applications whereextremely high reliability is required (aerospace equipment, nuclear power control systems, lifesupport systems, etc.) is strictly prohibited.

• Anti radioactive ray design is not considered for the products listed herein.

• This publication shall not be reproduced in whole or in part without prior written approval fromSanken.

Ordering Specify the number of standard minimum packaged units when placing an order.

Cardboard Box Stick Reel

SLA 50 108

SMA 120 108

STA300 100

STA400 80

STA500 110

SDK 1200

Standard minimum packaged unit

Series

Package Type

CAUTION / WARNING

1

Product index by Part Number .................................................... 2

Product index by function (Sink Driver) ......................................... 4

Product index by function (Source Driver)...................................... 6

Product index by function (Motor Driver) ....................................... 8

Product index by applications.................................................. 10

Storage, characteristic inspection, and handling precautions ........... 13

Avalanche energy capability of MOSFET array .............................. 14

Transistor array with built-in avalanche diode .............................. 16

Switching time measurement .................................................. 16

External dimensions ............................................................. 17

SLA packages ..................................................................... 18

SMA packages ................................................................... 122

STA packages .................................................................... 152

SD packages (surface mount) ................................................. 191

Contents

2

Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package PageSDA01 Source driver 4 –60 –1.5 2000 SMD 16-pin 191SDA05 3–phase motor driver 3 –60 –4 2000 SMD 16-pin 192SDC01 Sink driver 4 50 2 1000 SMD 16-pin 193SDC03 Sink driver 4 60±10 1.5 2000 SMD 16-pin 194SDC04 Sink driver 4 100±15 1.5 2000 SMD 16-pin 195SDC06 Sink driver 4 30 to 45 2 400 SMD 16-pin 196SDC07 3–phase motor driver 3 60 4 2000 SMD 16-pin 197SDH02 Sink driver 4 100 1.5 2000 SMD 16-pin 198SDH03 H–bridge driver 4 +100/–60 ±1.5 2000 SMD 16-pin 200SDK02 Sink driver 4 60 2 0.24 SMD 16-pin 202SDK04 Sink driver 4 100 2 0.8 SMD 16-pin 203SLA4010 Sink driver 4 60±10 4 2000 SIP 12-pin with fin 18SLA4030 Sink driver 4 100 4 2000 SIP 12-pin with fin 19SLA4031 Sink driver 4 120 4 2000 SIP 12-pin with fin 20SLA4041 Sink driver 4 200 3 1000 SIP 12-pin with fin 21SLA4060 Sink driver 4 120 5 2000 SIP 12-pin with fin 22SLA4061 Sink driver 4 120 5 2000 SIP 12-pin with fin 23SLA4070 Source driver 4 –100 –5 1000 SIP 12-pin with fin 24SLA4071 Source driver 4 –100 –5 2000 SIP 12-pin with fin 25SLA4310 H–bridge driver 4 ±60 ±4 80 SIP 12-pin with fin 26SLA4340 H–bridge driver 4 ±60 ±4 2000 SIP 12-pin with fin 28SLA4390 H–bridge driver 4 ±100 ±5 2000 SIP 12-pin with fin 30SLA4391 H–bridge driver 4 ±100 ±5 1000 SIP 12-pin with fin 32SLA5001 Sink driver 4 100 5 0.3 SIP 12-pin with fin 34SLA5002 Sink driver 4 100 5 0.3 SIP 12-pin with fin 35SLA5003 Sink driver 4 200 5 0.9 SIP 12-pin with fin 36SLA5004 Source driver 4 –60 –5 0.3 SIP 12-pin with fin 37SLA5005 Source driver 4 –100 –5 0.7 SIP 12-pin with fin 38SLA5006 Source driver 4 –100 –5 0.7 SIP 12-pin with fin 39SLA5007 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 40SLA5008 H–bridge driver 4 ±100 +4/–3 0.6/1.3 SIP 12-pin with fin 42SLA5009 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 44SLA5010 3–phase motor driver 6 ±100 +4/–3 0.6/1.3 SIP 12-pin with fin 46SLA5011 Sink driver 5 60 5 0.22 SIP 12-pin with fin 48SLA5012 Source driver 5 –60 –5 0.3 SIP 12-pin with fin 49SLA5013 H–bridge driver 4 ±100 ±5 0.3/0.7 SIP 12-pin with fin 50SLA5015 Source driver 5 –60 –4 0.55 SIP 12-pin with fin 52SLA5017 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 54SLA5018 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 56SLA5021 Sink driver 5 100 5 0.19 SIP 12-pin with fin 58SLA5022 3–phase motor driver 6 ±60 ±6 2000 0.22 SIP 12-pin with fin 60SLA5023 3–phase motor driver 6 ±100 ±6 2000 0.55 SIP 12-pin with fin 62SLA5024 Source driver 4 –60 –4 0.55 SIP 12-pin with fin 64SLA5029 Sink driver 5 60 4 0.45 SIP 12-pin with fin 65SLA5031 Sink driver 4 60 5 0.3 SIP 12-pin with fin 66SLA5037 Sink driver 4 100 10 0.08 SIP 12-pin with fin 67SLA5040 Sink driver 4 100 4 0.6 SIP 12-pin with fin 68SLA5041 Sink driver 4 200 10 0.175 SIP 12-pin with fin 69SLA5042 Sink driver 5 100 5 0.185 SIP 12-pin with fin 70SLA5044 Sink driver 4 250 10 0.25 SIP 12-pin with fin 71SLA5046 Sink driver 5 200 7 0.35 SIP 12-pin with fin 72SLA5047 Sink driver 4 150 10 0.085 SIP 12-pin with fin 73SLA5049 Sink driver 5 250 7 0.5 SIP 12-pin with fin 74SLA5052 Sink driver 4 150 10 0.115 SIP 12-pin with fin 75SLA5054 Sink driver 6 150 ±7/±5/±7 0.105/0.44/0.2 SIP 15-pin with fin 76SLA5055 Sink driver 5 150 ±5/±7 0.44/0.2 SIP 12-pin with fin 78SLA5057 Sink driver 6 200 ±7/±7 0.175/0.35 SIP 15-pin with fin 80SLA5058 Sink driver 5 150 ±7 0.2 SIP 12-pin with fin 81SLA5059 3–phase motor driver 6 60 ±4 0.55 SIP 12-pin with fin 82SLA5060 3–phase motor driver 6 60 ±6 0.22 SIP 12-pin with fin 84SLA5061 3–phase motor driver 6 60 ±10 0.14 SIP 12-pin with fin 86SLA5064 3–phase motor driver 6 60 ±10 0.14 SIP 12-pin with fin 88SLA5065 5–phase motor driver 4 60 7 0.1 SIP 15-pin with fin 90SLA5068 5–phase motor driver 6 60 7 0.1 SIP 15-pin with fin 91SLA5070 Sink driver 6 150 ±7/±7 0.105/0.2 SIP 15-pin with fin 92SLA5072 3–phase motor driver 6 250 7 0.5 SIP 15-pin with fin 94SLA5073 5–phase motor driver 6 60 5 0.3 SIP 15-pin with fin 95SLA5074 5–phase motor driver 4 60 5 0.3 SIP 15-pin with fin 96SLA5075 3–phase motor driver 6 500 ±5 1.4 SIP 15-pin with fin 97SLA5077 Sink driver 4 150 ±10 0.2 SIP 12-pin with fin 98SLA5079 3–phase motor driver 3 –60 –10 0.14 SIP 12-pin with fin 99

Product index by Part Number

3

Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package PageSLA5080 3–phase motor driver 3 60 10 0.14 SIP 12-pin with fin 100SLA5081 Sink driver 5 150 ±7/±7 0.105/0.2 SIP 15-pin with fin 102SLA5085 Sink driver 5 60 5 0.22 SIP 12-pin with fin 104SLA5086 Source driver 5 –60 –5 0.22 SIP 12-pin with fin 105SLA5088 Sink driver 5 150 ±5/±7 0.44/0.2 SIP 15-pin with fin 106SLA6012 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin with fin 108SLA6020 3–phase motor driver 6 ±100 ±5 2000 SIP 12-pin with fin 110SLA6022 3–phase motor driver 6 ±80 ±5 2000 SIP 12-pin with fin 112SLA6023 3–phase motor driver 6 ±60 ±6 2000 SIP 12-pin with fin 114SLA6024 3–phase motor driver 6 ±60 ±8 2000 SIP 12-pin with fin 116SLA6026 3–phase motor driver 6 ±60 ±10 2000 SIP 12-pin with fin 118SLA8001 H–bridge 4 ±60 ±12 50 SIP 12-pin with fin 120SMA4020 Source driver 4 –60 –4 2000 SIP 12-pin 122SMA4021 Source driver 4 –60 –3 2000 SIP 12-pin 123SMA4030 Sink driver 4 100 3 2000 SIP 12-pin 124SMA4032 Sink driver 4 100 3 2000 SIP 12-pin 125SMA4033 Sink driver 4 100 2 2000 SIP 12-pin 126SMA5101 Sink driver 4 100 4 0.6 SIP 12-pin 127SMA5102 Sink driver 4 100 4 0.6 SIP 12-pin 128SMA5103 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin 130SMA5104 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin 132SMA5105 Sink driver 4 100 5 0.3 SIP 12-pin 134SMA5106 Sink driver 4 100 4 0.55 SIP 12-pin 135SMA5112 3–phase motor driver 6 250 7 0.5 SIP 12-pin 136SMA5114 Sink driver 4 60 3 0.25 SIP 12-pin 137SMA5117 3–phase motor driver 6 250 7 0.25 SIP 12-pin 138SMA5118 3–phase motor driver 6 500 ±5 1.4 SIP 12-pin 139SMA5125 3–phase motor driver 6 ±60 ±10 0.14 SIP 12-pin 140SMA5127 3–phase motor driver 6 ±60 ±4 0.55 SIP 12-pin 142SMA6010 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin 144SMA6014 3–phase motor driver 6 ±60 ±2 1500/2000 SIP 12-pin 146

SMA6511Stepper motor driverr with

5 100±15/–60 1.5/–3 2000 SIP 12-pin 148Dual Supply Voltage Switch

SMA6512Stepper motor driverr with

5 60±10/–60 1.5/–3 2000 SIP 12-pin 150Dual Supply Voltage SwitchSTA301A Sink driver 3 60±10 4 1000 SIP 8-pin 152STA302A Source driver 3 –50 –4 1000 SIP 8-pin 153STA302A 3–phase motor driver 3 –50 –4 1000 SIP 8-pin 153STA303A Sink driver 3 100 4 1000 SIP 8-pin 154STA303A 3–phase motor driver 3 100 4 1000 SIP 8-pin 154STA304A 3–phase motor driver 3 550 1 200 SIP 8-pin 155STA305A 3–phase motor driver 3 –550 –1 200 SIP 8-pin 156STA308A Source driver 3 –120 –4 2000 SIP 8-pin 157STA312A Sink driver 3 60 3 300 SIP 8-pin 158STA322A Source driver 3 –50 –3 100 SIP 8-pin 159STA371A Sink driver 3 60±10 2 2000 SIP 8-pin 160STA401A Sink driver 4 60±10 4 1000 SIP 10-pin 161STA402A Source driver 4 –50 –4 1000 SIP 10-pin 162STA403A Sink driver 4 100 4 1000 SIP 10-pin 163STA404A Sink driver 4 200 3 1000 SIP 10-pin 164STA406A Sink driver 4 60±10 6 2000 SIP 10-pin 165STA408A Source driver 4 –120 –4 2000 SIP 10-pin 166STA412A Sink driver 4 60 3 300 SIP 10-pin 167STA413A Sink driver 4 35±5 3 500 SIP 10-pin 168STA421A Source driver 4 –60 –3 40 SIP 10-pin 169STA431A H–bridge driver 4 ±60 ±3 40 SIP 10-pin 170STA434A H–bridge driver 4 ±60 ±4 1000 SIP 10-pin 172STA435A Sink driver 4 65±15 4 1000 SIP 10-pin 174STA457C H–bridge driver 4 ±60 ±4 2000 SIP 10-pin 176STA458C H–bridge driver 4 ±30 ±5 40 SIP 10-pin 178STA460C Sink driver 2 60±10 6 700 SIP 10-pin 180STA471A Sink driver 4 60±10 2 2000 SIP 10-pin 181STA472A Source driver 4 –60 –2 2000 SIP 10-pin 182STA473A Sink driver 4 100 2 2000 SIP 10-pin 183STA475A Sink driver 4 100±15 2 2000 SIP 10-pin 184STA481A Sink driver 4 60±10 1 2000 SIP 10-pin 185STA485A Sink driver 4 100±15 1 2000 SIP 10-pin 186STA501A Sink driver 4 60 5 0.2 SIP 10-pin 187STA504A Sink driver 4 60 4 0.45 SIP 10-pin 188STA505A Sink driver 4 100 3 0.6 SIP 10-pin 189STA506A Sink driver 4 100 2 0.8 SIP 10-pin 190

4

Product index by function Sink driver

Part Number Number of chips VCEO (V) IC (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSTA460C 2 60±10 6 700 1 SIP 10-pin 180STA371A 3 60±10 2 2000 2 SIP 8-pin 160STA301A 3 60±10 4 1000 2 SIP 8-pin 152SDC06 4 30 to 45 2 400 3 SMD 16-pin 196STA413A 4 35±5 3 500 4 SIP 10-pin 168STA481A 4 60±10 1 2000 5 SIP 10-pin 185SDC03 4 60±10 1.5 2000 6 SMD 16-pin 194STA471A 4 60±10 2 2000 5 SIP 10-pin 181STA401A 4 60±10 4 1000 5 SIP 10-pin 161SLA4010 4 60±10 4 2000 6 SIP 12-pin with fin 18STA406A 4 60±10 6 2000 5 SIP 10-pin 165STA435A 4 65±15 4 1000 7 SIP 10-pin 174STA485A 4 100±15 1 2000 5 SIP 10-pin 186SDC04 4 100±15 1.5 2000 6 SMD 16-pin 195STA475A 4 100±15 2 2000 5 SIP 10-pin 184

With built-in avalanche diode between collector and base

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSDK02 4 60 2 0.24 8 SMD 16-pin 202SMA5114 4 60 3 0.25 9 SIP 12-pin 137SLA5031 4 60 5 0.3 10 SIP 12-pin with fin 66SDH02 4 100 1.5 2000 11 SMD 16-pin 198SMA4033 4 100 2 2000 12 SIP 12-pin 126SMA4032 4 100 3 2000 12 SIP 12-pin 125SLA5040 4 100 4 0.6 10 SIP 12-pin with fin 68SMA5102 4 100 4 0.6 10 SIP 12-pin 128SMA5106 4 100 4 0.55 10 SIP 12-pin 135SLA5002 4 100 5 0.3 10 SIP 12-pin with fin 35SMA5105 4 100 5 0.3 10 SIP 12-pin 134SLA4031 4 120 4 2000 12 SIP 12-pin with fin 20SLA4061 4 120 5 2000 12 SIP 12-pin with fin 23SLA4041 4 200 3 1000 12 SIP 12-pin with fin 21SLA5003 4 200 5 0.9 10 SIP 12-pin with fin 36

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSTA312A 3 60 3 300 13 SIP 8-pin 158STA303A 3 100 4 100 14 SIP 8-pin 154SDC01 4 50 2 1000 15 SMD 16-pin 193STA412A 4 60 3 300 16 SIP 10-pin 167STA504A 4 60 4 0.45 17 SIP 10-pin 188STA501A 4 60 5 0.2 18 SIP 10-pin 187STA473A 4 100 2 2000 19 SIP 10-pin 183STA506A 4 100 2 0.8 18 SIP 10-pin 190SDK04 4 100 2 0.8 20 SMD 16-pin 203SMA4030 4 100 3 2000 21 SIP 12-pin 124STA505A 4 100 3 0.6 18 SIP 10-pin 189STA403A 4 100 4 1000 19 SIP 10-pin 163SLA4030 4 100 4 2000 21 SIP 12-pin with fin 19SMA5101 4 100 4 0.6 20 SIP 12-pin 127SLA5001 4 100 5 0.3 20 SIP 12-pin with fin 34SLA5037 4 100 10 0.08 20 SIP 12-pin with fin 67SLA4060 4 120 5 2000 21 SIP 12-pin with fin 22SLA5047 4 150 10 0.085 20 SIP 12-pin with fin 73SLA5052 4 150 10 0.115 20 SIP 12-pin with fin 75STA404A 4 200 3 1000 19 SIP 10-pin 164SLA5041 4 200 10 0.175 20 SIP 12-pin with fin 69SLA5044 4 250 10 0.25 20 SIP 12-pin with fin 71SLA5029 5 60 4 0.45 22 SIP 12-pin with fin 65SLA5011 5 60 5 0.22 22 SIP 12-pin with fin 48SLA5085 5 60 5 0.22 22 SIP 12-pin with fin 104SLA5021 5 100 5 0.19 22 SIP 12-pin with fin 58SLA5042 5 100 5 0.185 22 SIP 12-pin with fin 70SLA5055 5 150 ±5/±7 0.44/0.2 22 SIP 12-pin with fin 78SLA5088 5 150 ±5/±7 0.44/0.2 22 SIP 15-pin with fin 106SLA5058 5 150 ±7 0.2 22 SIP 12-pin with fin 81SLA5081 5 150 ±7/±7 0.105/0.2 22 SIP 15-pin with fin 102SLA5046 5 200 7 0.35 22 SIP 12-pin with fin 72SLA5049 5 250 7 0.5 22 SIP 12-pin with fin 74SLA5054 6 150 ±7/±5/±7 0.105/0.44/0.2 23 SIP 15-pin with fin 76SLA5070 6 150 ±7/±7 0.105/0.2 23 SIP 15-pin with fin 92SLA5057 6 200 ±7/±7 0.175/0.35 23 SIP 15-pin with fin 80

General purpose

With built-in flywheel diode

5

1110

12851

9432

76

G

H

I

J

K

L

M

1

2

3

4

5

6

7

8

9

0

A

B

C

D

E

F

Equivalent circuit (Sink driver)

6

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSMA4021 4 –60 –3 2000 1 SIP 12-pin 123SLA4071 4 –100 –5 2000 1 SIP 12-pin with fin 25SLA5006 4 –100 –5 0.7 2 SIP 12-pin with fin 39


Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSTA322A 3 –50 –3 100 3 SIP 8-pin 159STA302A 3 –50 –4 1000 4 SIP 8-pin 153STA308A 3 –120 –4 2000 4 SIP 8-pin 157STA402A 4 –50 –4 1000 5 SIP 10-pin 162SDA01 4 –60 –1.5 2000 6 SMD 16-pin 191STA472A 4 –60 –2 2000 5 SIP 10-pin 182STA421A 4 –60 –3 40 7 SIP 10-pin 169SMA4020 4 –60 –4 2000 6 SIP 12-pin 122SLA5024 4 –60 –4 0.55 8 SIP 12-pin with fin 64SLA5004 4 –60 –5 0.3 8 SIP 12-pin with fin 37SLA4070 4 –100 –5 1000 6 SIP 12-pin with fin 24SLA5005 4 –100 –5 0.7 8 SIP 12-pin with fin 38STA408A 4 –120 –4 2000 9 SIP 10-Pin 166SLA5015 5 –60 –4 0.55 10 SIP 12-pin with fin 52SLA5012 5 –60 –5 0.3 10 SIP 12-pin with fin 49SLA5086 5 –60 –5 0.22 10 SIP 12-pin with fin 105

General purpose

Product index by function Source driver

7

Equivalent circuit (Source driver)

1

2

3

4

5

6

7

8

9

0

8

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSTA458C 4 ±30 ±5 40 1 SIP 10-pin 178STA431A 4 ±60 ±3 40 2 SIP 10-pin 170STA434A 4 ±60 ±4 1000 3 SIP 10Pin 172STA457C 4 ±60 ±4 2000 4 SIP 10-pin 176SLA4310 4 ±60 ±4 80 5 SIP 12-pin with fin 26SLA4340 4 ±60 ±4 2000 3 SIP 12-pin with fin 28SLA5007 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin with fin 40SLA5018 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin with fin 56SMA5103 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin 130SLA8001 4 ±60 ±12 50 1 SIP 12-pin with fin 120SDH03 4 ±100/–60 ±1.5 2000 7 SMD 16-pin 200SLA5008 4 ±100 +4/–3 0.6/1.3 6 SIP 12-pin with fin 42SLA4390 4 ±100 ±5 2000 3 SIP 12-pin with fin 30SLA4391 4 ±100 ±5 1000 8 SIP 12-pin with fin 32SLA5013 4 ±100 ±5 0.3/0.7 6 SIP 12-pin with fin 50

H-bridge driver

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSDC07 3 60 4 2000 9 SMD 16-pin 197SLA5080 3 60 10 0.14 10 SIP 12-pin with fin 100STA303A 3 100 4 1000 11 SIP 8-pin 154STA304A 3 550 1 200 12 SIP 8-pin 155STA302A 3 –50 –4 1000 13 SIP 8-pin 153SDA05 3 –60 –4 2000 14 SMD 16-pin 192SLA5079 3 –60 –10 0.14 15 SIP 12-pin with fin 99STA305A 3 –550 –1 200 16 SIP 8-pin 156SLA5059 6 60 ±4 0.55 17 SIP 12-pin with fin 82SLA5060 6 60 ±6 0.22 17 SIP 12-pin with fin 84SLA5061 6 60 ±10 0.14 17 SIP 12-pin with fin 86SLA5064 6 60 ±10 0.14 18 SIP 12-pin with fin 88SMA6014 6 ±60 ±2 1500/2000 19 SIP 12-pin 146SMA6010 6 ±60 ±4 2000 20 SIP 12-pin 144SLA6012 6 ±60 ±4 2000 19 SIP 12-pin with fin 108SMA5127 6 ±60 ±4 0.55 21 SIP 12-pin 142SLA5009 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin with fin 44SLA5017 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin with fin 54SMA5104 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin 132SLA5022 6 ±60 ±6 2000 0.22 22 SIP 12-pin with fin 60SLA6023 6 ±60 ±6 2000 19 SIP 12-pin with fin 114SLA6024 6 ±60 ±8 2000 19 SIP 12-pin with fin 116SLA6026 6 ±60 ±10 2000 19 SIP 12-pin with fin 118SMA5125 6 ±60 ±10 0.14 18 SIP 12-pin 140SLA6022 6 ±80 ±5 2000 19 SIP 12-pin with fin 112SLA5010 6 ±100 +4/–3 0.6/1.3 21 SIP 12-pin with fin 46SLA6020 6 ±100 ±5 2000 20 SIP 12-pin with fin 110SLA5023 6 ±100 ±6 2000 0.55 22 SIP 12-pin with fin 62SLA5072 6 250 7 0.5 23 SIP 15-pin with fin 94SMA5112 6 250 7 0.5 24 SIP 12-pin 136SMA5117 6 250 7 0.25 24 SIP 12-pin 138SLA5075 6 500 ±5 1.4 23 SIP 15-pin with fin 97SMA5118 6 500 ±5 1.4 24 SIP 12-pin 139

3-phase motor driver

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSMA6511 5 100±15/–60 1.5/–3 2000 25 SIP 12-pin 148SMA6512 5 60±10/–60 1.5/–3 2000 25 SIP 12-pin 150

Stepper motor driver with dual supply voltage switch

Product index by function Motor driver

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package PageSLA5074 4 60 5 0.3 26 SIP 15-pin with fin 96SLA5065 4 60 7 0.1 26 SIP 15-pin with fin 90SLA5073 6 60 5 0.3 27 SIP 15-pin with fin 95SLA5068 6 60 7 0.1 28 SIP 15-pin with fin 91

5-phase motor driver

9

Equivalent circuit (Motor driver)

J

K

L

M

N

O

P

Q

R

1

2

3

4

5

6

7

8

9

0

A

B

C

D

E

F

G

H

I

10

Application Typical circuit example

STA301A STA460C

STA371A STA413A

STA401A SDC06

STA406A

STA435A

STA471A

STA475A

STA481A

STA485A

STA4010

SDC04

SDC03

SLA4031 SLA5002

SLA4041 SLA5003

SLA4060 SLA5031

SMA4032 SLA5040

SMA4033 SMA5102

SDH02 SMA5105

SMA5106

SMA5114

SDK02

SLA4071 SLA5006

SMA4021

STA302A STA322A SLA5004

STA308A STA421A SLA5005

STA402A SLA5024

STA408A

STA472A

SLA4070

SMA4020

SDA01

Product type

Transistor

Darlington SingleMOSFET

Solenoid

Relay

Product index by applications

11

STA434A STA431A

STA457C STA458C

SLA4340 SLA4310

STA4390 SLA8001

SDH03

SLA4391 SLA5007

SLA5008

SLA5013

SLA5018

SMA5103

STA302A+STA303A

SMA6010

SLA6020

SDA05+SDC07

SLA5072

SLA5075

SMA5112

SMA5117

SMA5118

STA304A+STA305A

SLA6012

SLA6022

SLA6023

SLA6024

SLA6026

SMA6014

SLA5022

SLA5023

SLA5009SLA5010SLA5017SLA5059SLA5060SLA5061SLA5064SLA5079+SLA5080SMA5104SMA5125SMA5127

DC motor Forward-reverse

control

PWM control

3-phase DCbrushlessmotor

100V AC direct drive200V AC direct drive

200V AC direct drive

PWM control


Product type

Transistor


12

STA401A STA460C

STA406A STA413A

STA435A SDC06

STA471A

STA475A

STA481A

STA485A

SLA4010

SDC04

SDC03

SMA6511

SMA6512

STA473A STA421A STA506A

STA472A STA412A STA505A

STA408A SDC01 STA504A

STA404A STA501A

STA403A SMA5101

STA402A SLA5024

SMA4030 SLA5005

SMA4020 SLA5004

SLA4070 SLA5001

SLA4060

SLA4030

SDA01

Stepper Constant voltage

motor drive

Dual supply voltage

drive

Bipolar drive


SLA5011 SLA5012

SLA5029 SLA5015

SLA5065+SLA5068 SLA5086

SLA5073+SLA5074

SLA5085

N–CH P–CH

5-phasemotor


SLA5021 SLA5047 SLA5041 SLA5044SLA5037 SLA5052 SLA5046 SLA5049SLA5042 SLA5054 SLA5057

SLA5055SLA5058SLA5070SLA5077SLA5081SLA5088

100V 150V 200V 250V

"S" shapecorrectionswitch

Product index by applications


Product type

Transistor


Product type

Product type

13

Inappropriate storage, characteristic inspection, or handling

may impair the reliability of the device. To ensure high reliabil-ity, observe the following precautions:

1. Storage precautions It is recommended to store the device at room temperature

(between 5 and 35°C) and relative humidity of 40 to 75%.Avoid storing the device in a place where the temperature orhumidity is high or changes greatly.

Store the device in a clean place that is not exposed to directsunlight, and is free from corrosive or harmful gases.

If the device is stored for a long time, check the solderability

and lead condition before using the device.

2. Precautions on characteristic inspectionsWhen carrying out characteristic inspections on receiving

products or other occasions, take care to avoid applying a surge

voltage from the measuring equipment and check the termi-nals of the measuring equipment for a short circuit or wiringerrors. Measure the device within the range of its rated values.

3. Silicone GreaseWhen attaching a heatsink, apply a small amount of silicone

evenly to the back of the device and both sides of the insulatorto reduce the thermal resistance between the device and

heatsink. Recommended silicone grease

G746 SHINETSU SILICONE CO., LTD.

YG6260 GE TOSHIBA SILICONE CO., LTD.

SC102 DOW CORNING TORAY SILICONE CO., LTD.

Please select a silicone grease carefully since the oil in

some grease can penetrate the product, which will resultin an extremely short product life.

4. Screw tightening torqueIf screws are not tightened with sufficient torque, this can in-

crease the thermal resistance and reduce the radiation effect.Tightening screws with too great a torque damage the screwthread, deform the heatsink, or twist the device frame until it is

damaged. Therefore, tighten screws with a torque between0.588 and 0.784 N • m (6 to 8 kgf • cm).

5. Soldering temperatureIf soldering is necessary, take care to keep the application of

heat as brief as possible, and within the following limits:

260±5°C for 10 s max350°C for 3 s max (soldering iron)

6. HeatsinkA large contact area between the device and the heatsink for

effective heat radiation is required. To ensure a large contactarea, minimize mounting holes and select a heatsink with asufficiently smooth surface and that is free from burring or metal

debris.

7. Handling precautions to protect powerMOSFET arrays from static damage

When handling the device, physical grounding is necessary.

Wear a wrist strap with a 1 MΩ resistor close to the body inthe wrist strap to prevent electric shock.

Use a conductive tablemat or floor mat at the device han-

dling workbench and to ensure grounding. When using a curve tracer or other measuring equipment,

ground the equipment as well.

When soldering, ground the bit of the soldering iron and thedip tank to prevent a leakage voltage from damaging thedevice.

Store the device in the shipping container or a conductivecontainer or use aluminum foil to protect the device fromstatic electricity.

Storage, characteristic inspection, and handling precautions

14

1. What is avalanche energy capability ?When a MOSFET is used for high-speed switching, the in-

ductive load and wiring inductance may cause a counter elec-tromotive voltage at cutoff that the device cannot withstand.

Avalanche energy capability is the non-clamped ability to with-

stand damage expressed as energy. As long as the energyapplied to the device at cutoff is within the guaranteed ava-lanche energy capability, the device will not be damaged even

if the drain-source voltage exceeds the capability.For example, a drain-source voltage that is within the guaran-

teed capability when electrically stationary may exceed the limit

at startup or cutoff. Usually, a snubber circuit or similar surgeabsorbing circuit is used to keep the drain-source voltage withinthe guaranteed capability. Sanken MOSFETs, however, do not

require this kind of protective circuit because the avalancheenergy capability is guaranteed. Sanken MOSFETs enablethe number of parts to be reduced, saving board area.

* Consult the engineering department of Sanken when plan-ning to use MOSFETs in avalanche mode.

2. EAS calculation methodIf the current in an inductive load L is ILP at the moment when

the MOSFET is cut off, EAS can be expressed as follows:

*VDD : Supply voltage

If the value of L is not known in an actual circuit, EAS canalso be calculated from the actual voltage and current wave-forms as follows:

EAS = PS • t .....................................................................2

*PS : Surge power *t : Surge time

The following calculation is used to determine EAS where the

voltage and current shown in Fig. A are applied to the MOSFETin a circuit

Integrate the overlapping section of ID and VDS to calculate

∫ID • VDS • dt. When the ID waveform is triangular, EAS will be asfollows:

EAS = • 10(A) • 550(V) • 10(µs) = 27.5(mJ)

3. Temperature derating for EASThe EAS value in the specifications is guaranteed when the

channel temperature Tch is 25°C. Since the EAS value drops asthe channel temperature rises, derating depending on the tem-

perature is necessary.Fig. B shows the derating curve for single avalanche energy

capability. This is the derating curve of EAS and the channel

temperature (Tch (start)) immediately before the avalanche oc-curs in the product, with the EAS value (maximum rating) at25°C as 100%.

For example, if the product temperature is 50°C, the EAS valueis derated to 64% of the value at 25°C.

Fig. A

Fig. B

4. Continuous avalanche energy capabilityThis section explains the derating method for continuous ava-

lanche.Considering continuous avalanche as the repetition of a single

avalanche, the safe operating area (SOA) is determined usingthe derating curve shown in Fig. B.

Calculate the energy and Tch (start) of avalanche in the worst

condition and determine SOA using the calculated data andthe derating curve shown in Fig. B. The temperature rise dueto avalanche should not cause the channel temperature to ex-

ceed the maximum rating.The following is an example of determining SOA judgment by

calculation when a MOSFET enters a transient avalanche state

at power-on then changes to a stationary stateSupposing that the waveform is as shown in Fig. C until the

MOSFET changes to the stationary state, calculate the start

loss and switching (turn-on/off) loss. To simplify the calcula-tion, the average loss Pa and the last two waveforms are usedfor approximation. (Fig. D)

First, calculate the channel temperature Tch (τ) at time (τ)where the temperature condition is severest.

If the Tch (τ) value is within the maximum rating, there is no

problem as far as the temperature is concerned.

10A

550V(VDSS)

550V(VDSS)

0

0

ID

VDS

10 sµ

100

80

60

40

20

025 50 75 100 125 150

Tch (start) (°C)

EA

S(n

orm

aliz

ed) (%

)

ILp = ID max

EAS – Tch (start)

Avalanche energy capability of MOSFET array Sanken MOSFETs feature guaranteedavalanche energy capability.

EAS = • L • ILP2 • .......................................112

VDSS

VDSS – VDD

12

15

Tch(τ) = Ta + Pa • rch–c (Tn + T + t1 + t2 + t3)+ (P1 – Pa) • rch–c (T + t1 + t2 + t3)

– (P1 – P2) • rch–c (T + t2 + t3)+ (P3 – P2) • rch–c (T + t3)– P3 • rch–c (T) + P4 • rch–c (t4 + t5 + t6)

– (P4 – P5) • rch–c (t5 + t6)+ (P6 – P5) • rch–c (t6)................................................3

*Ta : Ambient temperature*rch-c (t) : Transient thermal resistance at pulse width t

Then calculate the channel temperature Tch (τl) immediatelybefore avalanche.Tch(τ) = Ta + Pa • rch–c (Tn + T’ + t1 + t2 + t3)

+ (P1 – Pa) • rch–c (T’ + t1 + t2 + t3)– (P1 – P2) • rch–c (T’ + t2 + t3)+ (P3 – P2) • rch–c (T’ + t3)

– P3 • rch–c (T’) + P4 • rch–c (t4 + t5 + t6)– (P4 – P5) • rch–c (t5 + t6)+ (P6 – P5) • rch–c (t6)................................................4

This Tch (τ) value becomes Tch (start). If the avalanche energy(EAS = P6 • t6) is within the value derated from the guaranteed

EAS value at the temperature, there is no problem as far as theavalanche energy is concerned.

Fig. E

VGS

0V

RG

VDS

VDD

IL

L

(a) Measuring circuit

(b) Output waveform

V(BR)DSS

V(BR)DSSV(BR)DSS – VDD

12

VDS

VDD

ILILp

EAS = • L • ILp2 •

Fig. C

T(n)

IDVDS

Avalanche in this section

Transient Stationary

Fig. D

T(n) t1 t2 t3 t4 t5 t6

Pa

P1P2

P3

P4P5

P6

τ1 τ

TT'

0

5. Avalanche energy capability measuring method

16

The Darlington transistor chip with a built-in avalanche diode

is a planar type monolithic Darlington transistor chip havingthe equivalent circuit shown in the figure on the right. SurgeVoltage can be absorbed by the avalanche diode provided be-

tween the collector and the base. This eliminated the need forextra components for absorbing surge caused by counter elec-tromotive force produced by inductive load switch circuits. These

Darlington transistor arrays are ideal for relay drive, solenoiddrive, and printer wire drive applications.

Transistor array with built-in avalanche diode SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A,460C, 471A, 475A, 481A, 485A, SDC03, 04, 06

Switching time measurement

1. Transistor array

Fig. 1 PNP

2. MOS FET array

IB2

R2

R1

RL

IB1

IC

+VBB2

–VBB1

–VCC

GND 0

D.U.T50 s

0

0

ton tstg tf

0.1IC

0.9IC

IB2

IB1

IC

0 0

0


(b) Input-output waveform

Base current

Collector current

µ

20 sµ

Fig. 2 NPN

IB1

R1

R2

RL

IB2

IC

+VBB1

–VBB2

VCC

GND 0

D.U.T

0

0

ton tstg tf

0.9IC

0.1IC

IB2

IB1

IC

0 0

0



50 sµ

20 sµ

Base current

Collector current

Fig. 3 Nch

Fig. 4 Pch

VGS

0VRG

VDS

VDD

ID

RL



P.W.=10 sDuty cycle≤1%

td(on)

ton

tr td(off)

toff

tr

90%

10%

90%

10%

VGS

VDS

µ

0V

VGS

RG

VDS

VDD

ID

RL

P.W.=10 sDuty cycle≤1%

td(on)

ton

tr td(off)

toff

tr

10%

90%

10%

90%

VGS

VDS



µ

17

External dimensions (unit: mm)

A SLA (12-pin)

31.5max

9.5m

in16

.0±0

.2

13.0

±0.2

2.7

31.0±0.2

24.4±0.2Ellipse3.2±0.15 × 3.8 4.8±0.2

1.7±0.1

2.2±0.71.2±0.15 1.45±0.15 0.55–0.1+0.20.85–0.1

+0.2

12

a. Part No.b. Lot No.

11 × P2.54±0.7 = 27.94±1.0

Pin1

3.2±0.15φ

a

b

31.0±0.2

10.2

±0.2

(10.

4)

2.4

1.46±0.15

4.0±0.2

2.5±0.2

1.2±0.1

27.94

2.54 0.85–0.1+0.2

0.55–0.1+0.2

a

b


B SMA

C STA (8-pin)

9.0± 0

.2

2.3± 0

.2

11.3

± 0.2

4.7± 0

.5

0.5± 0

.15

1.2± 0

.2

4.0± 0

.2

0.5±0.15

C1.5±0.5

1.0±0.25(2.54)

9 × 2.54 = 22.86±0.25

25.25±0.2

a

b

1 2 3 4 5 6 7 8 9 10a. Part No.b. Lot No.

STA (10-pin)

6.8m

ax

4.0m

ax

3.6± 0

.2

0.25

1.4± 0

.2

8.0±0.5

6.3±0.2

9.8±0.3

1.0±0.3

2.54±0.25

19.56±0.2

20.0max

0.89±0.15

0.75–0.05+0.15

0.3–

0.05

+0.1

5

16

0~0.1

3.0±0.2

a

b


9

81

1

C1.5±0.5

1.2

±0.2

0.5

±0.1

5

7 × P2.54=17.78

1.0±0.25 0.5±0.15 (2.54)

20.4 max

4.7

±0.5

11.3

±0.2

2.5

max

9.0

±0.2

2 3 4 5 6 7 8

4.0

±0.2

Pin No.

Weight : Approx. 2.0g


Weight : Approx. 4.0g Weight : Approx. 1.05g

D SD


31.3±0.2

4.8±0.2

1.7±0.1

2.45±0.2

9.9±0

.2

13.0

±0.2

16.0

±0.2

31.0±0.2

24.4±0.2

16.4±0.2

1.15–0.1+0.2 0.55–0.1

+0.2

9.7–

0.5

+1.

0

0.65–0.1+0.2

3.2±0.15φ 3.2±0.15× 3.8φ

14 × P2.03±0.7=28.42±1.0

R-End

4.0±0.7

(3.0

)6.

7±0.5

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

SLA (15-pin)


18

Characteristic curves

IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)

VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)

θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 4 A

ICP 6 (PW≤10ms, Du≤50%) A

IB 0.5 A

5 (Ta=25°C)

40 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

SLA4010Absolute maximum ratings (Ta=25°C)

Symbol unit Conditions

ICBO 10 µA VCB=50V

IEBO 10 mA VEB=6V

VCEO 50 60 70 V IC=10mA

hFE 2000 VCE=4V, IC=3A

VCE(sat) 1.5 V IC=3A, IB=10mA

Equivalent circuit diagram

PT W

5

4

3

2

1

00 1 2 3 4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=2.0mA

VCE (V)

IC (

A)

20000

0.05 0.1 1 4IC (A)

10000

5000

1000

500

100

500.5

hFE

(VCE=4V)

typ

20000

10000

5000

1000

500

100

500.05 0.1 0.5 1 4

Ta=125°C

25°C

–30°C

hFE

IC (A)

(VCE=4V)

0.1

2

1

00.5 1 4IC (A)

VC

E (

sat)

(V

)

Ta=–30°C

25°C

125°C

(IC / IB=1000) 3

2

1

00.2 0.5 1 5 10 50 100

VC

E (

sat)

(V

)

IB (mA)

IC=4A

IC=2AIC=3A

IC=1A

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–a

(°C

/ W

)

PW (mS)

5

3 5 10 50 100VCE (V)

1

0.5

0.1

IC (

A)

10ms

1ms

100ms

D.C.TC=25°C

10

0.05

Single PulseWithout HeatsinkTa=25°C

R1: 3kΩ typ R2: 150Ω typ

1R1 R2

4 8 11

12952

10763

NPN Darlington

With built-in avalanche diode

40

30

20

10

00–40 50 100 150

PT (

W)

Ta (°C)

Without Heatsink

50×50×2mm

With Silicone GreaseNatural CoolingHeatsink: Aluminumin mm

With Infinite H

eatsink

100×100×2

0 1VBE (V)

2

3

4

2

1

0

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C

Electrical characteristicsSpecification

min typ max

External dimensions A • • • SLA (12-pin)

19





SLA4030(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 4 A


IB 0.5 A

5 (Ta=25°C)

25 (Tc=25°C)

VISO 1000 (Between fin and lead pin, AC) Vrms

Tj 150 °C

Tstg –40 to +150 °C

θ j-c 5 °C/W

(Ta=25°C)

Symbol Unit Conditions

ICBO 10 µA VCB=120V

IEBO 10 mA VEB=6V

VCEO 100 V IC=10mA



PT

1

2

R1 R2

3

5

4

6

9

7

11

10

8 12


4

3

2

1

00 1 2 3

VCE (V)

IC (

A)

4 5 6

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=1mA

20000

0.02 0.05 0.1 1 4IC (A)

10000

5000

1000

500

100

50

200.5

hFE

(VCE=2V)

typ

20000

0.02 0.05 0.1 1 4

IC (A)

10000

5000

1000

500

100

50

200.5

hFE

(VCE=2V)

75°C

25°C

–30°CTa=

125°C

0.5

3

2

1

00.3 1 5

IC (A)

VC

E (

sat)

(V

)

Ta=

125°

C

75°C

25°C

–30°C

(IC / IB=500)3

2

1

00.1 0.5 1 5 10

VC

E (

sat)

(V

)

IB (mA)50

IC=4A

IC=2A

IC=1A

4

3

2

1

00 1 2 3

VBE (V)

IC (

A)

75°C

25°C

–30°

C

(VCE=2V)

Ta=1

25°C

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

100×100×2

50×50×2Without Heatsink

NPN Darlington

General purpose

5

3 5 10 50 200VCE (V)

1

0.5

0.1

IC (

A)

10

0.03

0.05

100

10ms

1ms

100µs


20

10

5

1

0.551 10 100 100050050

PW (mS)

θj–a

(°C

/ W

)Absolute maximum ratings Electrical characteristics


Specificationmin typ max


W

20





SLA4031(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 120 V IC=25mA

hFE 2000 5000 15000 VCE=2V, IC=2A

VCE (sat) 1.0 1.5 V

VBE (sat) 1.6 2.0 V

ton 0.6 µs VCC 40V,

tstg 5.0 µs IC=2A,

tf 2.0 µs IB1=–IB2=10mA

PT W

IC=2A, IB=2mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.2 V IF=1A

IR 10 µA VR=120V

trr 100 ns IF=±100mA Equivalent circuit diagram

1

2 3 4

6

5

R1 R2

8

9 10 11

7

12


4

3

2

1

00 1 2 3

VCE (V)

IC (

A)

4 5

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=1mA

20000

0.02 0.05 0.1 1 4 IC (A)

10000

5000

1000

500

100

50

200.5

hFE

(VCE=2V)

typ

20000

0.02 0.05 0.1 1 4

IC (A)

10000

5000

1000

500

100

50

200.5

hFE

(VCE=2V)

75°C

25°C

–30°CTa=125°C

0.5

3

2

1

00.3 1 5

IC (A)

VC

E (

sat)

(V

)

Ta=

125°

C75

°C25

°C

–30°C

(IC / IB=500)3

2

1

00.1 0.5 1 5 10

VC

E (

sat)

(V

)

IB (mA)50

IC=4A

IC=2A

IC=1A

4

3

2

1

00 1 2 3

VBE (V)

IC (

A)

Ta=1

25°C

75°C

25°C

–30°

C

(VCE=2V)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

5

3 5 10 50 200VCE (V)

1

0.5

0.1

IC (

A)

10

0.03

0.05

100

10ms

1ms

100µs


NPN Darlington


Absolute maximum ratings Electrical characteristicsSpecification

min typ max

Diode for flyback voltage absorptionSpecification

min typ max


20

10

5

1

0.551 10 100 100050050

PW (mS)

θj–a

(°C

/ W

)(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 120 V

VEBO 6 V

IC 4 A


IB 0.5 A

IF 4 (PW≤0.5ms, Du≤25%) A

IFSM 6 (PW≤10ms, Single) A

VR 120 V

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °CTstg –40 to +150 °Cθ j-c 5 °C/W

21





SLA4041(Ta=25°C)

Symbol Ratings Unit

VCBO 200 V

VCEO 200 V

VEBO 6 V

IC 3 A


IB 0.2 A

IF 3 (PW≤0.5ms, Du≤25%) A

IFSM 6 (PW≤10ms, single) A

VR 200 V

5 (Ta=25°C)

25 (Tc=25°C)

Tj 150 °CTstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 200 V IC=10mA

hFE 1000 6000 15000 VCE=4V, IC=1.5A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.7 2.0 V

VFEC 1.5 V IFEC=2.0A


PT W

IC=1.5A, IB=3mA

(Ta=25°C)


VR 200 V IR=10µA

VF 1.6 V IF=1A

IR 10 µA VR=200V

trr 100 ns IF=±100mA

Diode for flyback voltage absorption

6

5

4

3

2

1

0

IC (

A)

0 1 2 3 4 5 6

VCE (V)

IB=2

00m

A

30mA

100mA

3mA

10mA

1mA

(VCE=4V)5000

1000

500

100

50

300.03 0.05 0.1 0.5 1 5 6

hFE

IC (A)

5000

1000

500

100

50

300.03 0.05 0.1 0.5 5 6

(VCE=4V)hF

E

IC (A)

75°CTa=

125°

C

25°C

–30°

C

3

2

1

0

VC

E (

sat)

(V

)

0.2 0.5 1 5 6

IC (A)

(IC / IB=100)

Ta=

125°

C

25°C

–30°

C75°C

3

2

1

0

VC

E (

sat)

(V

)

IC=3A

IC=1.5A

IC=1A

0.5 1 5 10 50 100 200

IB (mA)

6

5

4

3

2

1

00 1 2 3

IC (

A)

VBE (V)

(VCE=4V)

Ta=12

5°C

25°C

–30°

C

75°C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–a

(°C

/ W

)

PW (mS)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2


100µS1mS10m

S

10

5

1

0.5

0.1

0.05

0.035 10 50 100 200

IC (

A)

VCE (V)



1

2 3 4

6

5

R1 R2

8

9 10 11

7

12

NPN Darlington



min typ max



22





SLA4060(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 120 V IC=25mA

hFE 2000 5000 15000 VCE=2V, IC=3A

VCE(sat) 1.0 1.5 V

VBE(sat) 1.6 2.0 V


tstg 5.5 µs IC=3A,



PT W

IC=3A, IB=3mA

1

2

R1 R2

3

5

4

6

9

7

11

10

8 12

R1: 2.5kΩ typ R2: 200Ω typ

5

4

0 1 VCE (V)

IC (

A)

3

2

1

02 3 4 5

1mA 0.8mA 0.7mA

IB=2mA

0.5mA

0.4mA

0.6mA20000

10000

5000

1000

500

100

0.02 IC (A)

hFE

50

200.05 0.5 1 5

(VCE=2V)

0.1

typ

20000

10000

5000

1000

500

100

0.02IC (A)

hFE

50

200.05 0.5 1 50.1

75°C

25°CTa=125°C

–30°C

(VCE=2V)

VC

E (

sat)

(V

)

0.5 IC (A)

05

2

1

1

(IC / IB=1000)

125°C

25°C75°C

Ta=–30°C

3

VC

E (

sat)

(V

)

0.2IB (mA)

00.5 10 50

2

1

1 5

IC=3A

IC=1A

IC=5A

5

4

0VBE (V)

IC

(A) 3

2

1

01 2 3

(VCE=2V)

75°C

25°C

–30°

C

Ta=1

25°C

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

10

5

1

0.5

0.1

VCE (V)

IC (

A)

0.03

0.05


100µs

1ms10m

s

3 5 10 50 100 200

NPN Darlington

General purpose


min typ max


(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 120 V

VEBO 6 V

IC 5 A


IB 0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θj-c 5 °C/W

23





(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 120 V IC=25mA

hFE 2000 5000 15000 VCE=2V, IC=3A

VCE(sat) 1.0 1.5 V

VBE(sat) 1.6 2.0 V


tstg 5.5 µs IC=3A,


SLA4061


PT W

IC=3A, IB=3mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.2 V IF=1A

IR 10 µA VR=120V




5

4

0 1

VCE (V)

IC (

A)

3

2

1

02 3 4 5

1mA 0.8mA 0.7mA 0.6mA

IB=2

mA

0.4mA

0.5mA20000

10000

5000

1000

500

100

0.02 IC (A)

hF

E

50

200.05 0.5 1 5

(VCE=2V)

0.1

typ

20000

10000

5000

1000

500

100

0.02

50

200.05 0.5 1 50.1

75°C

–30°C

Ta=125°C

25°C

IC (A)

hF

E(VCE=2V)

00.5 5

2

1

1

125°C

25°C

Ta=–30°C

75°CVC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)3

0.20

0.5 10 50

2

1

1 5

IC=3A

IC=1A

IC=5A

VC

E (

sat)

(V

)

IB (mA)

5

4

0

3

2

1

01 2 3

75°C

25°C

–30°

C

Ta=1

25°C

VBE (V)

IC (

A)

(VCE=2V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2


10

5

1

0.5

0.1

0.03

0.05Single PulseWithout HeatsinkTa=25°C

100µs

1ms10m

s

3 5 10 50 100 200VCE (V)

IC (

A)

NPN Darlington


1

2 3 4

6

5

R1 R2

8

9 10 11

7

12




Absolute maximum ratings Electrical characteristics(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 120 V

VEBO 6 V

IC 5 A


IB 0.5 A

IF 5 (PW≤0.5ms, Du≤25%) A


VR 120 V

5 (Ta=25°C)

25 (Tc=25°C)



24





SLA4070(Ta=25°C)


ICBO –10 µA VCB=–100V

IEBO –10 mA VEB=–6V

VCEO –100 V IC=–10mA

hFE 1000 5000 15000 VCE=–2V, IC=–3A

VCE(sat) –1.0 –1.5 V

VBE(sat) –1.6 –2.0 V

PT W

IC=–3A, IB=–6mA

R1 R2

10

12

7

8

6

5

3

1

11942


–8

–6

0

–5

–4

–3

–2

–7

–1

0–1 –2 –3 –4 –5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

IB= –4mA

VCE (V)

IC (

A)

10000

5000

1000

500

100

–0.0350

–0.5 –1 –5 –8–0.1

typ

IC (A)

hF

E

(VCE=–4V)10000

5000

1000

500

100

–0.0350

–0.5 –1 –5 –8–0.1

25°C

–30°

C

Ta=12

5°C

75°C

IC (A)

hF

E(VCE=–4V)

Ta= –30°C

25°C75°C

125°C

–3

–0.3

–2

–1

0–0.5 –1 –5 –8

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

IC= –5AIC= –3A

IC= –1A

–3

–0.3 –1 –5 –10 –50 –100 –200

–2

–1VC

E (

sat)

(V

)

IB (mA)

0

–8

IC (

A)

–6

–4

–2

0

VBE (V)0 –1 –2 –3

75°C

25°C

–30°

C

Ta=

125°

C

(VCE=–4V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/W)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

–5

–8

–1

–0.5

–0.1

VCE (V)

IC (

A)

–0.03

–0.05

–3 –5 –10 –50 –100

100µs

1ms

10ms


PNP Darlington

General purpose


min typ max



(Ta=25°C)

Symbol Ratings Unit

VCBO –100 V

VCEO –100 V

VEBO –6 V

IC –5 A

ICP –8 (PW≤1ms, Du≤50%) A

IB –0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j-c 5 °C/W

25





SLA4071(Ta=25°C)





hFE 2000 5000 15000 VCE=–2V, IC=–3A

VCE(sat) –1.0 –1.5 V

VBE(sat) –1.6 –2.0 V


IC=–3A, IB=–6mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.2 V IF=1A

IR 10 µA VR=120V


2 3 4

R1 R2

5

6

1

9 10 11

12

7

8


–8

–6

0

IC (

A)

–5

–4

–3

–2

–7

–1

0–1 –2 –3 –4 –5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

IB=–4

mA

VCE (V)

10000

5000

1000

500

100

–0.0350

–0.5 –1 –5 –8–0.1

typ

IC (A)

hF

E

(VCE=–4V) 10000

5000

1000

500

100

–0.03 IC (A)

50–0.5 –1 –5 –8–0.1

25°C

–30°

C

Ta=12

5°C

75°C

hF

E(VCE=–4V)

Ta=–30°C25°C

75°C

125°C

–3

–0.3

–2

–1

0–0.5 –1 –5 –8

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

IC=–5A

IC=–3A

IC=1A

–3

VC

E (

sat)

(V

)

IB (mA)–0.3 –0.5 –1 –5 –10 –50 –100 –200

–2

–1

0

–8

IC (

A)

–6

–4

–2

0

VBE (V)0 –1 –2 –3

75°C

25°C

–30°

C

Ta=

125°

C

(VCE=–4V)

20

10

5

1

0.51 5 10 50 100 500 1000

θj–a

(°C

/ W

)

PW (mS)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×250×50×2

–10

–5

–1

–0.5

–0.1

VCE (V)

IC (

A)

–0.03

–0.05Single PulseWithout HeatsinkTa=25°C

–3 –5 –10 –50 –100

100µs

1ms10m

s

PNP Darlington


Absolute maximum ratings Electrical characteristics

PT W



min typ max


(Ta=25°C)

Symbol Ratings Unit

VCBO –100 V

VCEO –100 V

VEBO –6 V

IC –5 A


IB –0.5 A

IF –5 (PW≤0.5ms, Du≤25%) A

IFSM –8 (PW≤10ms, single) A

VR 120 V

5 (Ta=25°C)

25 (Tc=25°)VISO 1000 (Between fin and lead pin, AC) Vrms


26


SLA4310

PT W

RatingsNPN PNP

00

1

2

4

3

1 2 3

VCE (V)

IC (

A)

54 6

IB=70

mA 60mA

50mA

40mA

30mA

20mA

10mA

5mA

0.01

IC (A)0.1 1 40.50.05

20

100

50

500

hFE

(VCE=4V)

typ

0

VBE (V)0.5 1.51.0

0

2

3

1

4IC

(A

)(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

0 –1 –20

–1

–2

–3

–4

–3

VCE (V)

IC (

A)

–4 –5 –6

IB=–8

0mA

–60mA

–50mA

–40mA

–30mA

–20mA

–10mA

–5mA

–0.01

IC (A)–0.1

typ

–1 –4–0.5–0.0520

100

50

500

hFE

(VCE=–4V)

–0.01

IC (A)0.1 –1 –4–0.5–0.05

20

100

50

500

hFE

(VCE=–4V)

Ta=125°C75°C

25°C

–30°C

0

VBE (V)–0.5 –1.5–1.0

0

–2

–3

–1

–4

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C

1

2

3

8

7

9411

6

10

5

12

PNP + NPN

H-bridge

0.01

IC (A)0.1 10.5 40.05

20

100

50

500

hFE

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

Absolute maximum ratings



NPN PNP NPN

NPN PNP PNP

NPN PNP

IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)

hFE-IC Characteristics (Typical)

hFE-IC Temperature Characteristics (Typical)

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A

ICP 6 (PW≤1ms, Du≤50%) –6 (PW≤1ms, Du≤50%) A

IB 1 –1 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j-c 5 °C/W

27


SLA4310(Ta=25°C)

NPN PNP

Symbol SpecificationUnit Conditions

SpecificationUnit Conditions

min typ max min typ max

ICBO 10 µA VCB=60V –10 µA VCB=–60V

IEBO 10 µA VEB=6V –10 µA VEB=–6V

VCEO 60 V IC=25mA –60 V IC=–25mA

hFE 80 VCE=4V, IC=1A 80 VCE=–4V, IC=–1A

VCE(sat) 0.6 V IC=2A, IB=0.2A –0.6 V IC=–2A, IB=–0.2A

1.0

0.05

IC (A)

0.5

00.1 0.5 1

VC

E (s

at)

• V

BE

(sa

t) (

V)

3

VBE (sat)

VCE (sat)

(IC / IB=10)

0.005

IB (A)0.1 10.50.050.01

0

1.0

0.5

1.5

VC

E (

sat)

(V

)

IC=3A

2A

1A

20

10

5

1

0.551 10 100 100050050

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

5

VCE (V)10 50 100

1

5

0.05

0.1

0.5

10

IC (

A)

3

1ms

10ms

Single PulseWithout HeatsinkT=25°C

–1.0

VC

E(s

at)

• V

BE(s

at)

(V)

(IC / IB=10)

–0.05

–0.5

0–0.1 –0.5 –1 –3

IC (A)

VBE (sat)

VCE (sat)

–0.005

IB (A)–0.1 –1–0.5–0.05–0.01

0

–1.0

–0.5

–1.5

VC

E (

sat)

(V

)

IC=3A2A

1A

–5

VCE (V)–10 –50 –100

–1

–5

–0.05

–0.1

–0.5

–10

IC (

A)

–3

1ms10m

s


Electrical characteristics

NPN PNP

NPN PNP

NPN PNP

VCE(sat)-IB Characteristics (Typical) θ j-a-PW Characteristics

VCE(sat) • VBE(sat)-IC Characteristics (Typical) PT-Ta Characteristics

Safe Operating Area (SOA)

28


NPN PNP NPN

NPN PNP PNP

NPN PNP




SLA4340

PT W

RatingsNPN PNP

6

4

2

00 2 4 6

IC (

A)

VCE (V)

IB=4.0mA 2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

0.03

hF

E

IC (A)

10000

1000

500

100

500.1 0.5 1 5 6

5000typ

(VCE=4V)

0.03

10000

1000

500

100

0.1 0.5 1 5 650

5000

Ta=125°C

75°C

25°C

–30°C

IC (A)

hF

E

(VCE=4V)

6

5

4

3

2

1

00 1 2 3

Ta=

125°

C

–30°

C75°C

25°C

VBE (V)

IC (

A)

(VCE=4V)–6

–4

–2

0

0 –2 –4 –6

IC (

A)

VCE (V)

–1.5mA

–1.2mA

–1.0mA

–0.9mA

–0.8mA

–1.8mA

IB=–

2.2m

A

–0.03

10000

1000

500

100

50–0.1 –0.5 –1 –5 –6

5000 typ

IC (A)

hF

E

(VCE=–4V)

–0.03

10000

1000

500

100

50–0.1 –0.5 –1 –5 –6

5000

Ta=12

5°C

–30°C

75°C

25°C

IC (A)

hF

E

(VCE=–4V)

–6

–5

–4

–3

–2

–1

00 –1 –2 –3

Ta=

125°

C

–30°

C

75°C

25°C

VBE (V)

IC (

A)

(VCE=–4V)

R1: 3kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 150Ω typ

8

9

R3 R4

12

11

7

2 4

1 5

6R1 R2

PNP + NPN Darlington

H-bridge




(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A


IB 0.5 –0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j-c 5 °C/W

29


NPN PNP

NPN PNP

NPN PNP


VCE(sat)-IC Temperature Characteristics (Typical) PT-Ta Characteristics


SLA4340(Ta=25°C)

NPN PNP





IEBO 10 mA VEB=6V –10 mA VEB=–6V



VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA

3

0.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

2

1

01 5 6

Ta=1

25°C

75°C

25°C

–30°

C

3

VC

E (

sat)

(V

)

0.2 0.5 1 5 10 50 100

2

1

IC=1A

IC=2A

IC=4A

0

IB (mA)

20

10

5

1

0.551 10 100 100050050

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×250×50×2

10

3

IC (

A)

VCE (V)

5

1

0.5

0.1

0.05

0.035 10 50 100


1ms

10ms

–3

–0.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–2

–1

0–1 –5 –6

125°C

25°C

75°C

Ta=–30°C

–3

VC

E (

sat)

(V

)

IB (mA)

–0.2 –0.5 –1 –5 –10 –50 –100

–2

–1

0

IC=–4A

IC=–2A

IC=–1A

–10

–3

IC (

A)

–5

–1

–0.5

–0.1

–0.05

–0.03–5 –10 –50 –100


1ms

10ms

VCE (V)


30


NPN PNP NPN

NPN PNP PNP

NPN PNP




SLA4390

8

9

R3 R4

12

11

7

2 4

1 5

6R1 R2

R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ

PT W

RatingsNPN PNP

8

IC (

A)

7

6

5

4

3

2

1

00 1 2 3 4 5

IB=2m

A

1mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

VCE (V)

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 8

typ

IC (A)

hF

E

(VCE=4V)

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 8

Ta=125°C

75°C

–30°C

0.05

25°C

IC (A)

hF

E

(VCE=4V)

–8

IC (

A)

VCE (V)

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5

IB=–4mA–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

(VCE=–4V)20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5

hFE

IC (A)–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –8

Ta=125°C

–30°C

75°C

25°C

(VCE=–4V)

hFE

IC (A)

(VCE=–4V)–8

IC (

A)

VBE (V)

–6

–4

–2

00 –1 –2 –3

Ta=1

25°C

75°C

25°C

–30°

C


H-bridge

(VCE=4V)8

IC (

A)

VBE (V)

6

4

2

00 1 2 3

Ta=

125°

C

–30°

C

25°C

75°C




(Ta=25°C)

Symbol Unit

VCBO 100 –100 V

VCEO 100 –100 V

VEBO 6 –6 V

IC 5 –5 A


IB 0.5 –0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j-c 5 °C/W

31


NPN PNP

NPN PNP

NPN PNP




SLA4390(Ta=25°C)

NPN PNP









3

0.2 0.5

2

1

01 5 10 50

IC=3A

IC=1A

IC=5A

VC

E (

sat)

(V

)

IB (mA)

3

0.3 0.5

2

1

01 5 8

Ta=

125°

C

25°C

–30°C

75°C

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

10

5

5

1

0.5

0.1

0.05

0.0310050103


10ms

1ms

100µs

VCE (V)

IC (

A)

–3

–0.2 –0.5

VC

E (

sat)

(V

)

IB (mA)

–2

–1

0–1 –5 –10 –50 –100 –500

IC=–3A

IC=–5A

IC=–1A

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–3

–0.3 –0.5

–2

–1

0–1 –5 –8

125°C

75°C25°C

Ta=–30°C

–10

–5

IC (

A)

VCE (V)

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3


10ms

1ms

100µs


32


NPN PNP NPN

NPN PNP PNP

NPN PNP




SLA4391

1

R3 R4 3

2

10

11

12

5

R1 R2

4

6

9

7

8


(Ta=25°C)

Symbol Unit

VCBO 100 –100 V

VCEO 100 –100 V

VEBO 6 –6 V

IC 5 –5 A


IB 0.5 –0.5 A

IF 5 (PW≤0.5ms, Du≤25%) A


VR 120 V

5 (Ta=25°C)

25 (Tc=25°C)



PT W

RatingsNPN PNP

8

IC (

A)

7

6

5

4

3

2

1

00 1 2 3 4 5

IB=2m

A

1mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

VCE (V)

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 8

typ

(VCE=4V)

hFE

IC (A)

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 8

Ta=125°C

–30°C

75°C

25°C

(VCE=4V)

hFE

IC (A)

8

6

4

2

00 1 2 3

Ta=1

25°C

75°C

25°C

–30°

C

(VCE=4V)IC

(A

)

VBE (V)

–8

IC (

A)

VCE (V)

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5

IB=–4mA–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –8

typ

(VCE=–4V)

hFE

IC (A)

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –8

Ta=125°C 75°C

25°C

–30°C

(VCE=–4V)

hFE

IC (A)

–8

–6

–4

–2

00 –1 –2 –3

Ta=1

25°C

75°C

25°C

–30°

C

(VCE =–4V)

IC (

A)

VBE (V)


H-bridge




33


NPN PNP

NPN PNP

NPN PNP




(Ta=25°C)


VR 120 V IR=10µA

VF 1.2 V IF=1A

IR 10 µA VR=100V

SLA4391


(Ta=25°C)

NPN PNP









3

0.2 0.5

2

1

01 5 10 50

IC=3A

IC=1A

IC=5A

VC

E (

sat)

(V

)

IB (mA)

3

0.3 0.5

2

1

01 5 8

Ta=

125°

C 75°C

–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

25°C

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0–40 0 50 100 150

Ta (°C)

PT (

W)


With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

10

5

5

1

0.5

0.1

0.05

0.0310050103


10ms

1ms

100µs

IC (

A)

VCE (V)

–3

–0.2 –0.5

–2

–1

0–1 –5 –10 –50 –100 –500

IC=–3A

IC=–5A

IC=–1AVC

E (

sat)

(V

)

IB (mA)

–3

–0.3 –0.5

–2

–1

0–1 –5 –8

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3


10ms

1ms

100µs

IC (

A)

VCE (V)



34


ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

SLA5001(Ta=25°C)


V(BR)DSS 100 V ID=250µA, VGS=0V

IGSS ±500 nA VGS=±20V

IDSS 250 µA VDS=100V, VGS=0V

VTH 2.0 4.0 V VDS=10V, ID=250µA

Re(yfs) 2.4 3.7 S VDS=10V, ID=5A

RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A

Ciss 350 pF VDS=25V, f=1.0MHz,

Coss 130 pF VGS=0V

ton 60 ns ID=5A, VDD 50V,VGS=10V,

toff 40 ns see Fig. 3 on page 16.

VSD 1.1 1.8 V ISD=5A, VGS=0V

trr 330 ns ISD=±100mA


(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±5 A

ID(pulse) ±10(PW≤1ms) A

EAS* 30 mJ

5 (Ta=25°C, with all circuits operating, without heatsink) W

35 (Tc=25°C,with all circuits operating, with infinite heatsink) W

θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W

θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W


Tch 150 °C

Tstg –40 to +150 °C

* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.

PT

1

2

3

5

4

6

8

9

7

12

11

10

0 2 10

10

6

0

VGS=4V

6V

VDS (V)

ID (

A)

4 6 8

4

2

8

7V

5V

10V

25°C

125°C

0 2 4 6 8

TC=–40°C

10

6

0

4

2

8

(VDS=10V)

VGS (V)

ID (

A)

(VGS=10V)

00

2

0.1

0.2

0.3

0.4

ID (A)

RD

S (

ON

) (Ω

)

4 6 8 10

0.30.05 0.5 1

1

5

7(VDS=10V)

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.2

0.3

0.4

0.5

RD

S (

ON

) (Ω

)

TC (°C)

0.1

ID=5AVGS=10V

0 10 20 30 40 50

50

100

1000

Ciss

Coss

Crss

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

0 1.0 1.5

5V

IDR (

A)

VSD (V)0.5

10V

10

6

0

4

2

8

VG

S=

0V

0.50.1

1 5 10 50 100

1

10

20(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (O

N)

ID (

A)

V (V)DS

0.5

5LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

0

With Silicone GreaseNatural CoolingAll Circuits Operating

0 50 100 150

Ta (°C)

PT (

W)

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

Electrical characteristicsAbsolute maximum ratings






35


(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A


Coss 130 pF VGS=0V





SLA5002(Ta=25°C)

Symbol Ratings Unit

VDSS 100 VVGSS ±20 V

ID ±5 AID(pulse) ±10 (PW≤1ms) A

EAS* 30 mJIF 5 (PW≤0.5ms, Du≤25%) A

IFSM 10 (PW≤10ms, Single Pulse) AVR 120 V

5 (Ta=25°C, with all circuits operating, without heatsink) W35 (Tc=25°C,with all circuits operating, with infinite heatsink) W

θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/Wθ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/WVISO 1000 (Between fin and lead pin, AC) VrmsTch 150 °CTstg –40 to +150 °C

* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15

PT



VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V



1

2

5

4

6

3

8

9

12

1110

7

0 2 10

10

6

0

VDS (V)

ID (

A)

4 6 8

4

2

8

5V

6V

7V10V

VGS=4V

0 2 4 6 8

ID (

A)

VGS (V)

10

6

0

4

2

8

(VDS=10V)

25°C

125°C

TC=–40°C

00

2

0.1

0.2

0.3

0.4

ID (A)

RD

S (

ON

) (Ω

)

4 6 8 10

(VGS=10V)

0.30.05 0.5 1

1

5

7

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.2

0.3

0.4

0.5

RD

S (

ON

) (Ω

)

TC (°C)

0.1

ID=5AVGS=10V

0 10 20 30 40 50

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Crss

Coss

0 1.0 1.5

IDR (

A)

VSD (V)0.5

10

6

0

4

2

8

5V10V

VG

S=0

V

0.50.1

1 5 10 50 100

1

10

20

ID (

A)

VDS (V)

0.5

5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (

ON)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel






36





SLA5003(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.67 0.9 Ω VGS=10V, ID=5A


Coss 100 pF VGS=0V





(Ta=25°C)

Symbol Ratings Unit



EAS* 60 mJIF 5(PW≤0.5ms, Du≤25%) A

IFSM 10(PW≤10ms, Single pulse) AVR 200 V

5 (Ta=25°C, with all circuits operating, without heatsink) W35 (Tc=25°C, with all circuits operating, with infinite heatsink) W

θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/Wθ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/WVISO 1000 (Between fin and lead pin, AC) VrmsTch 150 °CTstg –40 to +150 °C


PT



VR 200 V IR=10µA

1.0 1.2 V IF=1A

1.5 2.0 V IF=5A

IR 10 µA VR=200V



VF

1

2

5

4

6

3

8

9

12

1110

7

0 5 20

8

6

0

VDS (V)

ID (

A)

10 15

4

2

6V

7V

10V

VGS=5V

0 2 4 6 8

ID (

A)

VGS (V)

8

6

0

4

2

10

(VDS=10V)

25°C

125°C

TC=–40°C

00

1 2 3

0.5

1.0

1.5

ID (A)

RD

S (

ON

) (Ω

)

4 5 6 7 8

(VGS=10V)

0.20.05 0.5 1

1

5

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

1.0

1.5

2.0

2.5

RD

S (

ON

) (Ω

)

TC (°C)

0.5

ID=5AVGS=10V

0 10 20 30 40 505

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 1.0 1.5

IDR (

A)

VSD (V)0.5

8

6

0

4

2

5V

10V

VGS=0V

30.03

5 10 200

1

5

20

ID (

A)

VDS (V)

0.5

0.1

0.05

50 100

10

(TC=25°C)

ID (pulse) max

1ms10ms (1shot)

RDS (ON)

LIMITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel




Diode for flyback voltage absorption (1 circuit)





37


SLA5004(Ta=25°C)


V(BR)DSS –60 V ID=–250µA, VGS=0V

IGSS 500 nA VGS= 20V

IDSS –250 µA VDS=–60V, VGS=0V

VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 2.3 3.5 S VDS=–10V, ID=–5A

RDS(ON) 0.22 0.30 Ω VGS=–10V, ID=–5A

Ciss 570 pF VDS=–25V, f=1.0MHz,

Coss 360 pF VGS=0V

ton 100 ns ID=–5A, VDD –30V,VGS=–10V,


VSD –4.5 –5.5 V ISD=–5A

trr 150 ns ISD= 100mA


(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS 20 V

ID 5 A

ID(pulse) 10 (PW≤1ms) A


35 (Tc=25°C, with all circuits operating, with infinite heatsink) W




Tch 150 °C

Tstg –40 to +150 °C

PT

1

3

2

5

6

4

8

7

9

12

10

11

0 ---2 ---10

-–10

---6

0

VDS (V)

ID (

A)

---4 ---6 ---8

---2

---4

---8

–5V

–6V

–7V–10V

VGS=–4V

ID (

A)

VGS (V)

0 ---2 ---4 ---6 ---8

---10

---6

0

---2

---4

---8

(VDS=–10V)

25°C

125°C

TC=–40°C

00

---2

0.05

0.15

0.20

0.25

ID (A)

RD

S (

ON

) (Ω

)

---4 ---6 ---8

0.10

---10

(VGS=–10V)

0.3---0.5 ---1

1

8

ID (A)

Re

(yf

s) (

S)

---5 ---10

0.5

---0.1

5

(VDS=–10V)

25°C

125°C

TC=–40°C

---400

0 50 100 150

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

0.1

ID=–5AVGS=–10V

0 ---10 ---20 ---30 ---40 ---50

50

100

2000

VDS (V)

Cap

acita

nce

(pF

)

1000

30

500

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3

IDR (

A)

VSD (V)

–1 –2 –4

–10

–6

0

–2

–4

–8

–5V

–10V

VG

S=0

V

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

---0.5---0.1

---1 ---5 ---10 ---50 ---100

---1

---5

---10

ID (

A)

VDS (V)

---0.5

---20(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (ON)

LIM

ITED

100µs

P-channel

General purpose


±



38





SLA5005(Ta=25°C)

Symbol Unit Condition




VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 0.9 2.0 S VDS=–10V, ID=–5A

RDS(ON) 0.55 0.7 Ω VGS=–10V, ID=–5A


Coss 200 pF VGS=0V

ton 150 ns ID=–5A, VDD –50V, VGS=–10V,


VSD –4.5 –5.5 V ISD=–5A, VGS=0V


Specificationsmin typ max

(Ta=25°C)

Symbol Ratings Unit

VDSS –100 V

VGSS 20 V

ID 5 A







Tch 150 °C

Tstg –40 to +150 °C

PT

1

3

2

5

6

4

8

7

9

12

10

11

0 –2 –10

VDS (V)

ID (

A)

–4 –6 –8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

VGS=–4V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

–10(VDS=–10V)

25°C

125°C

TC=–40°C

00

---2

0.2

0.6

0.8

1.0

ID (A)

RD

S (

ON

) (Ω

)

---4 ---6 ---8

0.4

---10

(VGS=–10V)

0.3---0.5 ---1

1

5

ID (A)

Re

(yf

s) (

S)

---5 ---10

0.5

---0.1---0.05

(VDS=–10V)

25°C

125°C

TC=–40°C

---400

0 50 100 150

0.6

0.8

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.2

1.0

0.4

ID=–5AVGS=–10V

0 ---10 ---20 ---30 ---40 ---50

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

20

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 ---3

IDR (

A)

VSD (V)---1

---10

---6

0

---4

---2

---2 ---4

---8

–5V–10V

VGS=0V

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

---0.5---0.1

–1 ---5 ---10 ---50 ---100

---1

---5

---20

ID (

A)

VDS (V)

---0.5

---10

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (ON)

LIM

ITED

100µs

P-channel

General purpose







39


(Ta=25°C)

Symbol Ratings Unit

VDSS –100 V

VGSS 20 V

ID 5 A

ID(pulse) 10(PW≤1ms) A

IF 5(PW≤0.5ms, Du≤25%) A

IFSM 10(PW≤10ms, Single pulse) A

VR 120 V






Tch 150 °CTstg –40 to +150 °C

SLA5006(Ta=25°C)





VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 0.9 2.0 S VDS=–10V, ID=–5A

RDS(ON) 0.55 0.7 Ω VGS=–10V, ID=–5A


Coss 200 pF VGS=0V



VSD –4.5 –5.5 V ISD=–5A, VGS=0V


PT



VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V

trr 100 ns IF= 100mA


76

1 5 8

11109432

12

0 –2 –10

VDS (V)

ID (

A)

–4 –6 –8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

VGS=–4V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

–10(VDS=–10V)

25°C

125°

C

TC=–

40°C

00

---2

0.2

0.6

0.8

1.0

ID (A)

RD

S (

ON

) (Ω

)

---4 ---6 ---8

0.4

---10

(VGS=–10V)

0.3---0.5 ---1

1

5

ID (A)

Re

(yf

s) (

S)

---5 ---10

0.5

---0.1---0.05

(VDS=–10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.6

0.8

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.2

1.0

0.4

ID=–5AVGS=–10V

0 ---10 ---20 ---30 ---40 ---50

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

20

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 ---3

IDR (

A)

VSD (V)---1

---10

---6

0

---4

---2

---2 ---4

---8

–5V–1

0V

VGS=0V

---0.5---0.1

---1 ---5 ---10 ---50 ---100

---1

---5

---20

ID (

A)

VDS (V)

---0.5

---10

(TC=25°C)

ID (pulse) max

1ms

LIM

ITED

100µs

10ms (1shot)

RDS (ON) 25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

P-channel





±±


40

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)

RDS(ON)-ID Characteristics (Typical)

RDS(ON)-TC Characteristics (Typical)


SLA5007

12

10

11

1

2

3

7

94

6

8

5

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID ±5 4 A

ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A

EAS* 2 — mJ






Tch 150 °C

Tstg –40 to +150 °C* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

PT

RatigsN channel P channel

0 2 10

10

8

2

0

VDS (V)

ID (

A)

4 6 8

6

4

VGS=4V

6V

7V

5V

10V

00

2 4 10

0.05

0.10

0.15

0.20

ID (A)

RD

S (

ON

) (Ω

)

6 8

(VGS=10V)

---400

0 50 100 150

0.1

0.2

0.3

RD

S (

ON

) (Ω

)

TC (°C)

ID=5AVGS=10V

6

0

8

10

0 2 4 8

ID (

A)

VGS (V)

4

2

6

(VDS=10V)

25°C

125°C

TC=–40°C

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–6V

–5V

–7V

–10V

VGS=–4V

00

---2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

---4 ---6 ---8

0.3

0.1

(VGS=–10V)

---400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C

N-channel + P-channel

H-bridge




41

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch

Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)

Capacitance-VDS Characteristics (Typical)

IDR-VSD Characteristics (Typical) PT-Ta Characteristics


SLA5007(Ta=25°C)

N channel P channel




V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V

IGSS ±500 nA VGS=±20V 500 nA VGS= 20V

IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V

VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A

RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A

Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,

Coss 160 pF VGS=0V 170 pF VGS=0V

ton 35 ns ID=5A, VDD 30V,VGS=10V 60 ns ID=–4A, VDD –30V,VGS=10V,

toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.

VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V

trr 140 ns ISD=±100mA 150 ns ISD= 100mA

0.30.08 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

(VDS=10V)

25°C

TC=–40°C

125°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

8

10

IDR (

A)

VSD (V)0.5

4

6

5V

10V

VG

S=0

V

0.50.1

1 5 10 50 100

0.5

1

5

10

20 ID

(A

)

VDS (V)

(TC=25°C)

ID (pulse) max

1ms

LIM

ITED

10ms (1shot)RDS (

ON)

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.3---0.5 ---1

1

5

ID (A)

Re

(yf

s) (

S)

---5 ---8

0.5

---0.1

(VDS=–10V)

25°C

125°CTC=–40°C

0 ---10 ---20 ---30 ---40 ---50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=

0V

---0.5---0.1

---1 ---5 ---10 ---50 ---100

---1

---5

---10

ID (

A)

VDS (V)

---0.5

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µs

(TC=25°C)


42

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





(Ta=25°C)

Symbol Unit

VDSS 100 –100 V

VGSS ±20 20 V

ID ±4 3 A


EAS* 15 — mJ



θ j-c 3.57 °C/W


Tch 150 °C


SLA5008

12

10

11

1

2

3

7

94

6

8

5

Pch

Nch

PT

RatingsN channel P channel

0 20

8

7

3

0

VDS (V)

ID (

A)

10

6

5

4

2

1

VGS=5V

6V

7V

10V

00

1 2 8

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

3 4 5 6 7

(VGS=10V)

---400

0 50 100 150

0.2

0.8

1.0

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.6

0.4

ID=4AVGS=10V

0 2 4 6 10

ID (

A)

VGS (V)8

8

7

3

0

6

5

4

2

1

(VDS=10V)

25°C 125°

C

TC=–

40°C

0 –5 –20

VDS (V)

ID (

A)

–10 –15

–6

0

–1

–3

–5

–4

–2

–6V

–7V

–10V

VGS=–5V

00

–2

1.0

1.5

ID (A)

RD

S (

ON

) (Ω

)

–3 –4 –6

0.5

–5–1

(VGS=–10V)

–400

0 50 100 150

1.5

2.0

RD

S (

ON

) (Ω

)

TC (°C)

1.0

0.5

ID=–3AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–6

0

–1

–3

–5

–4

–2

(VDS=–10V)

25°C

125°CTC=–

40°C


H-bridge




43

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5008(Ta=25°C)

N channel P channel

Symbol SpecificationsUnit Conditions

SpecificationsUnit Conditions










ton 40 ns ID=4A, VDD 50V, VGS=–10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,


VSD 1.2 2.0 V ISD=4A –4.0 –5.5 V ISD=–3A


0.20.05 0.5 1

1

5

ID (A)

Re

(yf

s) (

S)

5 8

0.5

0.1

(VDS=10V)

25°C

125°CTC=–40°C

0 10 20 30 40 50

10

50

100

600

VDS (V)

Cap

acita

nce

(pF

)

5

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

7

8

IDR (

A)

VSD (V)0.5

1

3

4

6

5

5V10V

VGS=

0V

0.50.1

1 5 10 50 100

1

5

10ID

(A

)

VDS (V)

0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.2–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–6

0.5

–0.1–0.05

(VDS=–10V)

25°C

125°CTC=–40°C

0 ---10 ---20 ---30 ---40 ---50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

5

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3

IDR (

A)

VSD (V)–1

---5

0

---3

–1

–2 –4

---6

---4

---2

–5V–10V

VGS=0V

---0.5---0.1

---1 ---5 ---10 ---50 ---100

---1

---5

---10

ID (

A)

VDS (V)

---0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µsElectrical characteristics

44

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5009

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID ±5 4 A


EAS* 2 — mJ






Tch 150 °C


PT


0 2a 10

10

8

2

0

VDS (V)

ID (

A)

4 6 8

6

4

VGS=V

6V

7V

5V

10V

00

2 4 10

0.05

0.10

0.15

0.20

ID (A)

RD

S (

ON

) (Ω

)

6 8

(VGS=10V)

–400

0 50 100 150

0.1

0.2

0.3

RD

S (

ON

) (Ω

)

TC (°C)

ID=5AVGS=10V

6

0

8

10

0 2 4 8

ID (

A)

V (V)GS

4

2

6

(VDS=10V)

25°C

125°C

TC=–40°C

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–5V

–6V

–7V

–10V

VGS=–4V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

–400

0

0.6

0.8

1.0

0.4

0.2

50 100 150

RD

S (

ON

) (Ω

)

TC (°C)

ID=–4AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C


3-phase motor drive




45

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5009(Ta=25°C)

N channel P channel












ton 35 ns ID=5A, VDD 30V, VGS=–10V, 60 ns ID=–4A, VDD –30V, VGS=–10V,




0.30.08 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

(VDS=10V)

25°C

125°CTC=–40°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

8

10

IDR (

A)

VSD (V)0.5

4

6

5V10V

VG

S=0

V

0.50.1

1 5 10 50 100

0.5

1

5

10

20ID

(A

)

VDS (V)

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°CTC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VG

S=0

V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (O

N)LI

MIT

ED


46

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





(Ta=25°C)

Symbol Unit

VDSS 100 –100 V

VGSS ±20 20 V

ID ±4 3 A


EAS* 16 — mJ



θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W

θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating ) °C/W


Tch 150 °C


SLA5010

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

PT


0 20

8

7

3

0

VDS (V)

ID (

A)

10

6

5

4

2

1

VGS=5V

7V

6V

10V

00

1 2 8

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

3 4 5 6 7

(VGS=10V)

–400

0 50 100 150

0.2

0.8

1.0

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.6

0.4

ID=4AVGS=10V

0 –5 –20

VDS (V)

ID (

A)

–10 –15

–6

0

–1

–3

–5

–4

–2

–6V

–7V

–10V

VGS=–5V

00

–2

1.0

1.5

ID (A)

RD

S (

ON

) (Ω

)

–3 –4 –6

0.5

–5–1

(VGS=–10V)

0 2 4 6 10

ID (

A)

VGS (V)8

8

7

3

0

6

5

4

2

1

(VDS=10V)

25°C

125°C

TC=–40°C

ID (

A)

VGS (V)0 –2 –10 –4 –6 –8

–6

0

–1

–3

–5

–4

–2

(VDS=–10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

1.5

2.0

RD

S (

ON

) (Ω

)

TC (°C)

1.0

0.5

ID=–3AVGS=–10V


3-phase motor drive




47

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5010(Ta=25°C)

N channel P channel





IGSS ± 500 nA VGS=±20V 500 nA VGS= 20V







ton 40 ns ID=4A, VDD 50V, VGS=10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,


VSD 1.2 2.0 V ISD=4A, VGS=0V –4.0 –5.5 V ISD=–3A


0.20.05 0.5 1

1

5

ID (A)

Re

(yf

s) (

S)

5 8

0.5

0.1

(VDS=10V)

25°C

125°C

TC=–40°C

0 10 20 30 40 50

10

50

100

600

VDS (V)

Cap

acita

nce

(pF

)

5

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

7

8

IDR (

A)

VSD (V)0.5

1

3

4

6

5

5V10V

VGS=

0V

0.50.1

1 5 10 50 100

1

5

10ID

(A

)

VDS (V)

0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.2–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–6

0.5

–0.1–0.05

(VDS=–10V)

25°C

125°CTC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

5

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3

IDR (

A)

VSD (V)

–1

–5

0

–3

–1

–2 –4

–6

–4

–2

–5V–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED


48





SLA5011(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A


Coss 160 pF VGS=0V

ton 35 ns ID=5A, VDD 30V, VGS=10V,


VSD 1.1 1.5 V ISD=5A



(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID ±5 A

ID(pulse) ±10(PW≤1ms) A

EAS* 2 mJ






Tch 150 °C

Tstg –40 to +150 °C


PT

2

3

1

4

5

6

7

8

9

10

11

12

0 2 10

10

8

2

0

VDS (V)

ID (

A)

4 6 8

6

4

VGS=4V

6V

7V

5V

10V

6

0

8

10

0 2 4 8

ID (

A)

VGS (V)

4

2

6

(VDS=10V)

25°C

125°C

TC=–40°C

00

2 4 10

0.05

0.10

0.15

0.20

ID (A)

RD

S (

ON

) (Ω

)

6 8

(VGS=10V)

0.30.08 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

(VDS=10V)

25°C

125°CTC=–40°C

–400

0 50 100 150

0.1

0.2

0.3

RD

S (

ON

) (Ω

)

TC (°C)

ID=5AVGS=10V

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

8

10

IDR (

A)

VSD (V)0.5

4

6

5V

10V

VG

S=0

V

0.50.1

1 5 10 50 100

0.5

1

5

10

20

ID (

A)

VDS (V)

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT

(W

)



Without Heatsink

N-channel

General purpose







49


SLA5012(Ta=25°C)





VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 2.3 3.5 S VDS=–10V, ID=–5A

RDS(ON) 0.22 0.30 Ω VGS=–10V, ID=–5A


Coss 360 pF VGS=0V



VSD –4.5 –5.5 V ISD=–5A



(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS 20 V

ID 5 A







Tch 150 °C

Tstg –40 to +150 °C

PT

2

1

3

4

5

10

12

11

6

7

8

9

0 –2 –10

–10

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–8

–5V

–6V

–7V–10V

VGS=–4V

ID (

A)

VGS (V)

0 –2 –4 –6 –8

–10

–6

0

–2

–4

–8

(VDS=–10V)

25°C

125°C

TC=–40°C

00

–2

0.05

0.15

0.20

0.25

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.10

–10

(VGS=–10V)

0.3–0.5 –1

1

8

ID (A)

Re

(yf

s) (

S)

–5 –10

0.5

–0.1

5

(VDS=–10V)

25°C

125°CTC=–40°C

–400

0 50 100 150

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

0.1

ID=–5AVGS=–10V

0 ---10 ---20 ---30 ---40 ---50

50

100

2000

VDS (V)

Cap

acita

nce

(pF

)

1000

30

500

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3

IDR (

A)

VSD (V)–1 –2 –4

–10

–6

0

–2

–4

–8

–5V

–10V

VGS=

0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

–20(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS(ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

P-channel

General purpose




50

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5013

12

10

11

1

2

3

7

94

6

8

5

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 100 –100 V

VGSS ±20 20 V

ID ±5 5 A


EAS* 30 — mJ






Tch 150 °C

Tstg –40 to +150 °C


PT


0 2 10

10

6

0

VDS (V)

ID (

A)

4 6 8

4

2

8

VGS=4V

6V

7V

5V

10V

00

2

0.1

0.2

0.3

0.4

ID (A)

RD

S (

ON

) (Ω

)

4 6 8 10

(VGS=10V)

–400

0 50 100 150

0.2

0.3

0.4

0.5

RD

S (

ON

) (Ω

)

TC (°C)

0.1

ID=5AVGS=10V

0 2 4 6 8

ID (

A)

VGS (V)

10

6

0

4

2

8

(VDS=10V)

25°C

125°C

TC=–40°C

0 –2 –10

VDS (V)

ID (

A)

–4 –6 –8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

VGS=–4V

00

–2

0.2

0.6

0.8

1.0

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.4

–10

(VGS=–10V)

–400

0 50 100 150

0.6

0.8

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.2

1.0

0.4

ID=–5AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

–10(VDS=–10V)

25°C

125°C

TC=–

40°C


H-bridge




51

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5013(Ta=25°C)

N channel P channel
















0.30.05 0.5 1

1

5

7

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°CTC=

–40°

C

0 10 20 30 40 50

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 1.0 1.5

IDR (

A)

VSD (V)0.5

10

6

0

4

2

8

5V10V

VG

S=0

V

0.50.1

1 5 10 50 100

1

10

20ID

(A

)

VDS (V)

0.5

5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (

ON)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –10

0.5

–0.1–0.05

(VDS=–10V)

25°C

125°CTC=–40°C

0 –10 –20 –30 –40 –50

50

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

20

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3

IDR (

A)

VSD (V)–1

–10

–6

0

–4

–2

–2 –4

–8

–5V–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–20

ID (

A)

VDS (V)

–0.5

–10

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (ON)

LIM

ITED

100µs


52





SLA5015(Ta=25°C)





VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 1.6 2.2 S VDS=–10V, ID=–4A

RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A


Coss 170 pF VGS=0V



VSD –4.5 –5.5 V ISD=–4A



(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS 20 V

ID 4 A




θ j-a 25 (Junction-Air, Ta=25°C, with all circuits op1erating) °C/W



Tch 150 °C

Tstg –40 to +150 °C

PT

2

1

3

4

5

10

12

11

6

7

8

9

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–5V

–6V

–7V

–10V

VGS=–4V

ID (

A)

VGS (V)

0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°

C

TC=–

40°C

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 ---8

0.5

–0.1

(VDS=–10V)

25°C

125°CTC=–40°C

–400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)

–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VG

S=0

V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

P-channel

General purpose




54

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5017

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±10 20 V

ID ±5 4 A


EAS* 2 — mJ






Tch 150 °CTstg –40 to +150 °C

* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

PT


0 2 10

10

8

4

0

VDS (V)

ID (

A)

4 6 8

6

2VGS=3V

4V

3.5V

10V

00

1 7 10

0.1

0.2

0.3

ID (A)

RD

S (

ON

) (Ω

)

2 3 4 5 6 8 9

4V

VGS=10V

–400

0 50 100 150

0.1

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

(ID=2.5A)

4V

VGS=10V

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–5V

–6V

–7V

–10V

VGS=–4V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

–400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

–0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C

6

0

8

10

0 1 2 3 4

ID (

A)

VGS (V)5

4

2

(VDS=10V)

25°C

125°C

TC=–40°C


3-phase motor drive




55

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5017(Ta=25°C)

N channel P channel









RDS(ON)0.17 0.22 Ω VGS=10V, ID=5A

0.38 0.55 Ω VGS=–10V, ID=–4A0.25 0.30 Ω VGS=4V, ID=5A







0.30.05 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°CTC=–40°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

6

8

10

IDR (

A)

VSD (V)0.5

4

2

4V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

10

20 ID

(A

)

VDS (V)

0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°CTC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (O

N)LI

MIT

ED


56

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±10 20 V

ID ±5 4 A


EAS* 2 — mJ






Tch 150 °CTstg –40 to +150 °C


SLA5018

12

10

11

1

2

3

7

94

6

8

5

Pch

Nch

PT


0 2 10

10

8

4

0

VDS (V)

ID (

A)

4 6 8

6

2VGS=3V

4V

3.5V

10V

00

1 7 10

0.1

0.2

0.3

ID (A)

RD

S (

ON

) (Ω

)

2 3 4 5 6 8 9

4V

VGS=10V

–400

0 50 100 150

0.1

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

(ID=2.5A)

4V

VGS=10V

6

0

8

10

0 1 2 3 4

ID (

A)

VGS (V)5

4

2

(VDS=10V)

25°C

125°C

TC=–40°C

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–5V

–6V

–7V

–10V

VGS=–4V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

–400

0 50 100 150

0.6

0.8

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–2AVGS=–10V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C


H-bridge




57

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5018(Ta=25°C)

N channel P channel









RDS(ON)0.17 0.22 Ω VGS=10V, ID=2.5A

0.38 0.55 Ω VGS=–10V, ID=–2A0.25 0.30 Ω VGS=4V, ID=2.5A







0.30.05 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°CTC=–40°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

6

8

10

IDR (

A)

VSD (V)0.5

4

24V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

10

20ID

(A

)

VDS (V)

0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°CTC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)

RDS (O

N)LI

MIT

ED

100µs


58





SLA5021(Ta=25°C)

Symbol Unit Conditins




VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 4 6 S VDS=10V, ID=5A

0.18 0.19 Ω VGS=10V, ID=2.5A

0.19 0.25 Ω VGS=4V, ID=2.5A


Coss 240 pF VGS=0V






(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±10 V

ID ±5 A

ID(pulse) ±10 (PW≤1ms) A

EAS* 60 mJ






Tch 150 °CTstg –40 to +150 °C


PT RDS(ON)

2

3

1

4

5

6

7

8

9

10

11

12

0 2 10

8

6

0

VDS (V)

ID (

A)

4 6 8

4

2

10

VGS=2.5V

3.0V

3.5V

4.0V

10V

0 1 2 3 4

ID (

A)

VGS (V)

8

6

0

4

2

10

5

(VDS=10V)

25°C

125°C

TC=–40°C

00

2

0.05

0.15

0.20

0.25

ID (A)

RD

S (

ON

) (Ω

)

4 6 10

0.10

8

VGS=4V

VGS=10V

0.30.05 0.5 1

1

5

20

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

10

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

0.1

0.2

(ID=2.5A)

VGS=4V

VGS=10V

0 10 20 30 40 5020

50

100

3000

VDS (V)

Cap

acita

nce

(pF

)

1000

500

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 1.0 1.5

IDR (

A)

VSD (V)0.5

8

6

0

4

2

10

4V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

20

ID (

A)

VDS (V)

0.5

10

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel

General purpose





60

Characteristic curves (N-channel)

R1 R2

2

4

3OUT1

8

6

7OUT2

9

11

10OUT3

5 12

VM1

(Ta=25°C)

Symbol Ratings Unit

VM 60 V

IO ±6 (PW≤100ms) A

IOP ±10 (PW≤1ms) A

VGSS ±10 V

IB –0.5 A

5 (Ta=25°C)

35 (Tc=25°C)

θ j-a 25 °C/W

θ j-c 3.57 °C/W


Tj 150 °CTstg –40 to +150 °C

PT W

SLA5022(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.17 0.22 VGS=10V, ID=4A

0.25 0.30 VGS=4V, ID=4A


Coss 160 pF VGS=0V

ton 80 ns ID=4A, VDD=30V,

toff 50 ns VGS=5V




RDS(ON)


0 2 10

10

8

4

0

VGS=3V

4V

3.5V

4 6 8

10V

6

2

VDS (V)

ID (

A) 6

0

8

10(VDS=10V)

25°C

125°C

0 1 2 3 4

ID (

A)

VGS (V)

TC=–40°C

5

4

2

VGS=10V

00

1 7 10

0.1

0.2

0.3

ID (A)

RD

S (

ON

) (Ω

)

2 3 4 5 6 8 9

4V

0.30.05 0.5 1

1

5

10VDS=10V

25°C

125°C

ID (A)

Re

(yf

s) (

S)

5 10

0.5

TC=–40°C

0.1 –400

0 50 100 150

0.1

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

VGS=10V

4V

(ID=2.5A)

0 10 20 30 40 5010

100

1000

Ciss

Coss

Crss

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

00 1.0 1.5

6

8

10

VGS=0V

4V

IDR (

A)

VSD (V)0.5

10V

4

2

0.50.1

1 5 10 50 100

1

5

10

20(TC=25°C)

ID (pulse) max

1ms

100µs

10ms

(1shot)RDS (

ON) LIM

ITED

ID (

A)

VDS (V)

0.5

PNP Darlington + N-channel MOSFET

3-phase motor drive

Absolute maximum ratings Electrical characteristics (Sink : N channel MOSFET)

Ω



VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)

ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)

VSD-IDR Characteristics (Typical) Safe Operating Area (SOA)

61

Characteristic curves (PNP)

SLA5022(Ta=25°C)



IEBO –1 –5 mA VEB=–6V


hFE 2000 5000 12000 VCE=–4V, IC=–4A

VCE(sat) –1.5 V

VBE(sat) –2.0 V

VFEC 2.0 V IFEC=4A

trr 1.0 µs IF=±0.5A

ton 1.0 µs VCC –25V,

tstg 1.4 µs IC=–4A,

tf 0.6 µs IB1=–IB2=–10mA

fT 120 MHz VCE=–12V, IE=1A

Cob 150 pF VCB=–10V, f=1MHz


Electrical characteristics (Source: PNP transistor)

IC=–4A, IB=–10mA

–12

–10

–8

–6

–4

–2

00 –2 –4 –6

IB=–10mA

–1mA

–0.5mA

–2mA

–3mA–5mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

200–0.1 –0.5 –1 –5 –10

typ

(VCE=–4V)

hFE

IC (A)

20000

10000

5000

1000

500

200–0.1 –0.5 –1 –5

Ta=12

5°C

75°C

25°C

–30°

C

–10

(VCE=–4V)hF

E

IC (A)

–3

–0.1 –0.5

–2

–1

0–1 –5 –10

125°C

75°C25°C

–20

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

Ta=–30°C

–3

–0.3 –0.5

–2

–1

0–1 –5 –10 –50 –100 –200

IC=–2A

IC=–4A

IC=–8A

VC

E (

sat)

(V

)

IB (mA)0 –1 –2 –3

75°C

25°C

–30°

CTa=

125°

C

–12

–10

–8

–6

–4

–2

0

(VCE=–4V)

IC (

A)

VBE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θch-

c (

°C /

W)

–5VCE (V)

–100–50–10–3

–20

IC (

A)

–5

–1

–0.5

–0.1


10ms

1ms

100µs

–10

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink



θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics

62

Characteristic curves (N-channel)

VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)

ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)

VSD-IDR Characteristics (Typical) Safe Operating Area (SOA) θch-c-PW Characteristics

(Ta=25°C)

Symbol Ratings Unit

VM 100 V

IO ±6 (PW≤100ms) A

IOP ±8 (PW≤1ms) A

VGSS ±10 V

IB –0.5 A

5 (Ta=25°C)

35 (Tc=25°C)

θ j-a 25 °C/W

θ j-c 3.57 °C/W


Tj 150 °CTstg –40 to +150 °C

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.47 0.55 VGS=10V, ID=2A

0.60 0.78 VGS=4V, ID=2A


Coss 60 pF VGS=0V

ton 60 ns ID=4A, VDD=50V,

toff 50 ns VGS=10V




PT W RDS(ON) Ω

SLA5023

0 2 10

8

7

6

0

VGS=3V

4V

4.5V

VDS (V)

ID

(A)

4 6 8

10V

5

4

3

2

1

3.5V

VDS=10V

25°C

125°

C

0 2 4 6 8

ID (

A)

VGS (V)

TC=–

40°C

8

7

6

0

5

4

3

2

1

VGS=10V

00 1 2 3

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

4 5 6 7 8

VGS=4V

0.30.05 0.5 1

1

5

7VDS=10V

25°C

125°C

ID (A)

Re (y

fs)

(S)

5 8

0.5

TC=40°C

0.10 10 20 30 40 50

5

50

100

700

Ciss

Coss

Crss

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

0 1.0 1.5

VG

S=0

V

4V

IDR (

A)

VSD (V)0.5

10V

8

7

6

0

5

4

3

2

1

R1 R2

2

4

3OUT1

8

6

7OUT2

9

11

10OUT3

5 12

VM1


PNP Darlington + N-channel MOSFET

3-phase motor drive

0.1 10.5 105 10050 1000500 100005000

PW (mS)

20

10

5

1

0.5

0.2

θch-

c (

°C /

W)

–400

0 50 100 150

0.6

0.8

1.0

1.2

VGS=10V

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

VGS=4V

(ID=2A)

0.50.1

1 5 10 50 100

1

5

10(Tc=25°C)

DI (pulse) max

1ms

100µs

10ms (1shot)

ID (

A)

VDS (V)

LIM

ITED

0.5

RDS (O

N)

Absolute maximum ratings Electrical characteristics (Sink: N-channel MOSFET)



63

Characteristic curves (PNP)



θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics

(Ta=25°C)





hFE 2000 5000 12000 VCE=–4V, IC=–3A

VCE(sat) –1.5 V

VBE(sat) –2.2 V

VFEC 1.3 V IFEC=–1A

trr 2.0 µs IF=±100mA

ton 0.6 µs VCC –30V

tstg 1.6 µs IC=–3A


fT 90 MHz VCE=–12V, IE=1A



SLA5023

IC=–3A, IB=–6mA

–8

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

IB=–4mA

IC (

A)

VCE (V)

(VCE=–4V)20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5

hFE

IC (A)–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –8

Ta=125°C

–30°C

–0.05

75°C25°C

(VCE=–4V)hF

E

IC (A)

–3

–0.3 –0.5

–2

–1

0–1 –5 –10

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–3

–0.2 –0.5

VC

E (

sat)

(V

)

IB (mA)

–2

–1

0–1 –5 –10 –50 –100 –500

IC=–1A

IC=–3A

IC=–5A

–8

–6

–4

–2

00 –1 –2 –3

Ta=

125°

C

–30°

C

75°C

25°C

(VCE=–4V)

IC (

A)

VBE (V)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3


10ms

1ms

100µsIC

(A

)

VCE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θch-

c (

°C /

W)

Electrical characteristics (Source: PNP transistor)

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

64





SLA5024(Ta=25°C)





VTH –2.0 –4.0 V VDS=–10V, ID=–250µA

Re(yfs) 1.6 2.2 S VDS=–10V, ID=–4A

RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A


Coss 170 pF VGS=0V



VSD –4.4 –5.5 V ISD=–4A



1

3

2

5

6

4

8

7

9

12

10

11

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

–5V

–6V

–7V

–10V

VGS=–4V

ID (

A)

VGS (V)0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C 125°

C

TC=–

40°C

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°CTC=–40°C

–400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=

0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

ID (pulse) max

1ms

10ms (1shot)

RDS (O

N)LI

MIT

ED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

P-channel

General purpose




(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS 20 V

ID 4 A






VISO 1000 (Between finand lead pin, AC) Vrms

Tch 150 °C

Tstg –40 to +150 °C

PT




65


SLA5029(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.33 0.45 Ω VGS=10V, ID=4A


Coss 60 pF VGS=0V



VSD 1.1 1.5 V ISD=4A



2

3

1

4

5

6

7

8

9

10

11

12

N-channel

General purpose



(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID ±4 A


EAS* 1 mJ






Tch 150 °CTstg –40 to +150 °C


PT


66





SLA5031(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.17 0.22 Ω VGS=10V, ID=2.5A

0.25 0.30 Ω VGS=4V, ID=2.5A


Coss 160 pF VGS=0V





(Ta=25°C)

Symbol Ratings Unit




IFSM 10 (PW≤10ms, Single pulse) AVR 120 V

PT5 (Ta=25°C, with all circuits operating, without heatsink) W

35 (Tc=25°C,with all circuits operating, with infinite heatsink) Wθ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/Wθ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/WVISO 1000 (Between fin and lead pin, AC) VrmsTch 150 °CTstg –40 to +150 °C




VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V


Speciicationmin typ max

RDS(ON)

1

2

5

4

6

3

8

9

12

1110

7

0 2 10

10

8

4

0

VDS (V)

ID (

A)

4 6 8

6

2VGS=3V

4V

3.5V

10V

6

0

8

10

0 1 2 3 4

ID (

A)

VGS (V)5

4

2

(VDS=10V)

25°C

125°C

TC=–40°C

00

1 7 10

0.1

0.2

0.3

ID (A)

RD

S (

ON

) (Ω

)

2 3 4 5 6 8 9

4V

VGS=10V

0.30.05 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°CTC=–40°C

–400

0 50 100 150

0.1

0.2

0.3

0.4

RD

S (

ON

) (Ω

)

TC (°C)

(ID=2.5A)

4V

VGS=10V

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

6

8

10

IDR (

A)

VSD (V)0.5

4

2

4V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

10

20

ID (

A)

VDS (V)

0.5

(TC=25°C)

ID (pulse) max

1ms10m

s (1shot)RDS (ON)

LIM

ITED

100µs

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel






67





SLA5037(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


60 80 mΩ VGS=10V, ID=5A

75 95 mΩ VGS=4V, ID=5A


Coss 480 pF VGS=0V

td(on) 30 ns ID=5A,

tr 45 ns VDD 50V,

td(off) 100 ns RL=10Ω, VGS=5V,

tf 40 ns see Fig. 3 on page 16.



Specificationsmin typ max

(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±10 A


EAS* 200 mJ






Tch 150 °CTstg –40 to +150 °C

* : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

PT RDS(ON)

1

3

2

4

6

5

9

7

8

12

10

11

0 10

2

4

0

VDS (V)

ID (

A)

10

6

8

2 4 6 8

VGS=2V

2.8V

10V

3V

4V

2.6V

2.4V

2.2V

0

10

8

6

4

2

0 1 2 3 4

ID (

A)

VGS (V)

(VDS=10V)

25°C

125°C

TC=–40°C

00

10

40

20

60

100

80

ID (A)

RD

S (

ON

) (m

Ω)

2 4 6 8

VGS=4V

VGS=10V

0.050.3

0.5

0.1 0.5 1

1

ID (A)

Re

(yf

s) (

S)

30

10

5

105

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

100

50

150

RD

S (

ON

) (m

Ω)

TC (°C)

(ID=5A)

VGS=4V

VGS=10V

0 10 20 30 40 5050

100

500

5000

1000

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 0.5 1.0 1.5

10

8

6

IDR (

A)

VSD (V)

4

2

5V

VG

S=0

V

0.5 1 5 10 50 1000.5

1

5

50

10

ID (

A)

VDS (V)

ID (pulse) max

1ms

10ms (1shot)

RDS (O

N)LI

MIT

ED

100µs

(TC=25°C)

N-channel

General purpose



25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink


68


SLA5040(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A


Coss 82 pF VGS=0V

ton 40 ns ID=4A, VDD=50V, VGS=10V,




(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V



IFSM 8 (PW≤10ms, Single pulse) AVR 120 V


35 (Tc=25°C,with all circuits operating, with infinite heatsink) Wθ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/Wθ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/WVISO 1000 (Between fin and lead pin, AC) VrmsTch 150 °CTstg –40 to +150 °C




VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V



min typ max

1

2

5

4

6

3

8

9

12

1110

7

N-channel





69





SLA5041(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=1mA


RDS(ON) 130 175 mΩ VGS=10V, ID=5A


Coss 550 pF VGS=0V

td(on) 20 ns ID=5A,

tr 25 ns VDD 100V,






(Ta=25°C)

Symbol Ratings Unit

VDSS 200 V

VGSS ±20 V

ID ±10 A

ID(pulse) ±40 (PW≤1ms, Du≤1%) A

EAS* 120 mJ






Tch 150 °CTstg –40 to +150 °C

* : VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

PT

1

3

2

4

6

5

9

7

8

12

10

11

0 2 40

4

2

6

8

10

6

VGS (V)

ID (

A)

8

(VDS=10V)

25°C

–40°

C

125°

C

0 20

50

100

150

200

ID (A)

RD

S (

ON

) (m

Ω)

4 1086

(VGS=10V)

–400

400

300

200

100

TC (°C)

RD

S (

ON

) (m

Ω)

150100500

ID=5AVGS=10V

0 10 5040302010

100

50

500

1000

3000

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

4

2

6

8

10

VSD (V)

IDR (

A)

VGS=5.10V

VG

S=

0V

0.5 1 5 50100.01

0.05

0.1

0.5

5

1

10

50

100 500

VDS (V)

(TC=25°C)

ID (

A)

10ms (1shot)

1ms

100µs

RDS (O

N) LIM

ITED

ID (pulse) max

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel

General purpose





0 2 40

4

2

6

8

10

6

VDS (V)

ID (

A)

8 10

5.5V

6V

10V 5V

4.5V

VGS=4V

0.05 0.1 0.50.3

1

0.5

5

10

20

1

ID (A)

Re

(yf

s) (

S)

5 10

TC=25°C

TC=125°CTC=–40°C

(VDS=10V)

70





SLA5042(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 4 6 S VDS=10V, ID=2.5A

130 185 mΩ VGS=10V, ID=2.5A

155 230 mΩ VGS=4V, ID=2.5A


Coss 240 pF VGS=0V

td(on) 20 ns ID=2.5A,

tr 30 ns VDD 50V,






(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±5 A


EAS* 70 mJ




θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W


Tch 150 °CTstg –40 to +150 °C

* : VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω,see Fig. E on page 15.

PT RDS(ON)

2

3

1

4

5

6

7

8

9

10

11

12

0 10

5

1

0

VDS (V)

ID (

A)

4

2

3

2 4 6 8

3V

4V

10V

VGS=2.2V

2.8V

2.6V

2.4V

0

5

4

3

2

1

25°C

125°C

0 1 2 3 4

ID (

A)

VGS (V)

TC=–40°C

(VDS=10V)

VGS=4V

VGS=10V

00

100

50

200

150

ID (A)

RD

S (

ON

) (m

Ω)

1 2 3 4 5

0.050.3

0.5

0.1 0.5 1

1

ID (A)

Re

(yf

s) (

S)

10

5

5

25°C

125°C

TC=–40°C

(VDS=10V)

–4050

0 50 100 150

300

100

150

200

250

350

RD

S (

ON

) (m

Ω)

TC (°C)

VGS=10V

VGS=4V

(ID=2.5A)

0 10 20 30 40 5020

50

100

500

2000

1000

Ciss

Coss

Crss

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

00 0.5 1.0 1.5

5

4

3

IDR (

A)

VSD (V)

2

1

5V

10V

VGS= 0V

0.5 1 5 10 50 2001000.1

0.5

1

5

20

10ID (pulse) max

100µs

ID (

A)

VDS (V)

1ms10m

s (1shot)

RDS (O

N) LI

MIT

ED

TC=25°C1-Circuit Operation

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel

General purpose





71





SLA5044(Ta=25°C)







RDS(ON) 200 250 mΩ VGS=10V, ID=5A


Coss 550 pF VGS=0V

td(on) 20 ns ID=5A,

tr 25 ns VDD 100V,






(Ta=25°C)

Symbol Ratings Unit

VDSS 250 V

VGSS ±20 V

ID ±10 A


EAS* 120 mJ






Tch 150 °CTstg –40 to +150 °C

* : VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50Ω,see Fig. E on page 15.

PT

1

3

2

4

6

5

9

7

8

12

10

11

0 2 40

4

2

6

8

10

6

VDS (V)

ID (

A)

8 10

4.5V

VGS=4V

6V

5V10V

0 2 40

4

2

6

8

10

6

VGS (V)

ID (

A)

8

(VDS=10V)

TC=–40°CTC=25°CTC=125°C

00

150

100

50

200

250

300

ID (A)

RD

S (

ON

) (m

Ω)

108642

(VGS=10V)

0.05 0.50.10.3

1

0.5

5

10

20

ID (A)

Re

(yf

s) (

S)

1 105

(VDS=10V)

TC=–40°CTC=25°CTC=125°C

–40 00

200

100

300

400

500

TC (°C)

RD

S (

ON

) (m

Ω)

10050 150

ID=5AVGS=10V

0 2010 3010

100

50

500

1000

3000

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

4

2

6

8

10

VSD (V)

IDR (

A)

5.10V

VG

S=0

V

0.5 1 5 10050100.01

0.05

0.1

0.5

5

1

10

50

500

VDS (V)

ID (

A)

10ms (1shot)

100µs1ms

(TC=25°C)ID (pulse) max

RDS (ON)

LIMITED

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel

General purpose External dimensions A • • • SLA (12-pin)




72





SLA5046(Ta=25°C)






Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A

RDS(ON) 270 350 mΩ VGS=10V, ID=3.5A

Ciss 450 pF VDS=10V,

Coss 280 pF f=1.0MHz,

Crss 120 pF VGS=0V


tr 30 ns VDD 100V,

td(off) 55 ns RL=28.6Ω, VGS=10V,





(Ta=25°C)

Symbol Ratings Unit

VDSS 200 V

VGSS ±20 V

ID ±7 A


EAS* 55 mJ






Tch 150 °CTstg –40 to +150 °C


PT

2

3

1

4

5

6

7

8

9

10

11

12

0 2 4 6 80

3

2

1

4

5

7

6

10

VDS (V)

ID (

A)

10V

6V

5.5V

5V

4.5V

VGS=4V

0 2 40

4

3

2

1

5

6

7

6

VGS (V)

ID (

A)

8

(VDS=10V)

TC=–40°C

25°C

125°C

0 21 3 40

0.2

0.1

0.3

0.4

0.5

5

ID (A)

RD

S (

ON

) (Ω

)

6 7

(VGS=10V)

0.05 0.50.10.3

1

0.5

5

10

ID (A)

Re

(yf

s) (

S)

1 75

(VDS=10V)

Tc=–40°C

25°C

125°C

–40 00

0.4

0.2

0.6

0.8

1.0

50

TC (°C)

RD

S (

ON

) (Ω

)

100 150

ID=3.5AVGS=10V

0 2010 30

10

5

3

100

50

500

1000

2000

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHZ

0 0.5 1.0 1.50

4

3

2

1

5

6

7

VSD (V)

IDR (

A)

VG

S=0

V5.10V

53 10 10050

0.1

0.05

1

0.5

5

10

20

500

VDS (V)

ID (

A)

1ms

10ms (1shot)

100µs

RDS (ON) LIMITED

ID (pulse) max(TC=25°C)

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel




73





SLA5047(Ta=25°C)

Symbol Ratings Unit

VDSS 150 V

VGSS ±20 V

ID ±10 A


EAS* 280 mJ






Tch 150 °CTstg –40 to +150 °C


PT

(Ta=25°C)

Symbol Unit Specification




VTH 1.0 2.0 V VDS=10V, ID=250µA


70 85 mΩ VGS=10V, ID=5A

80 100 mΩ VGS=4V, ID=5A


Coss 470 pF VGS=0V

td(on) 35 ns ID=5A,

tr 40 ns VDD 70V,






RDS(ON)

1

3

2

4

6

5

7

9

8

10

12

11

0 2 4 6 80

4

2

10

8

6

10

VDS (V)

ID (

A)

VGS=10V

3V

2.8V

2.6V

2.4V

0 1 20

6

4

2

8

10

3

VGS (V)

ID (

A)

4

(VDS=10V)

TC

=–40

°C

25°C

125°

C

0 42 60

50

100

150

8

ID (A)

RD

S (

ON

) (m

Ω)

10

VGS=4V

10V

0.05 10.50.10.3

5

1

0.5

10

50

ID (A)

Re

(yf

s) (

S)

105

TC=–40°C

25°C

125°C

(VDS=10V)

–40 00

50

100

150

200

50

TC (°C)

RD

S (

ON

) (m

Ω)

100 150

VGS=4V

10V

(ID=5A)

0 2010 3050

100

500

1000

8000

5000

40 50

VDS (V)

Cap

acita

nce

(pF

) Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

4

2

6

8

10

VSD (V)

IDR (

A)

0V

VG

S=5

V

510.5 10 20010050

0.1

0.05

0.01

1

0.5

5

10

50

VDS (V)

ID (

A)

1ms10ms (1shot)

100µs

RDS (ON) LIMITED

ID (pulse) max(TC=25°C)

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

N-channel




74





SLA5049(Ta=25°C)






Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A



Coss 280 pF VGS=0V


tr 30 ns VDD 100V,






(Ta=25°C)

Symbol Ratings Unit

VDSS 250 V

VGSS ±20 V

ID ±7 A


EAS* 55 mJ






Tch 150 °CTstg –40 to +150 °C


PT

2

3

1

4

5

6

7

8

9

10

11

12

0 2 4 6 80

3

2

1

4

5

7

6

10

VDS (V)

ID (

A)

10V

6V

5.5V

5V

VGS=4V

4.5V

0 2 4 60

5

4

3

2

1

6

7

8

VGS (V)

ID (

A)

(VDS=10V)

TC=–40°C

25°C

125°C

0 21 3 40

0.2

0.1

0.3

0.4

0.5

5

ID (A)

RD

S (

ON

) (Ω

)

6 7

(VGS=10V)

0.05 10.50.10.3

1

0.5

5

10

ID (A)

Re

(yf

s) (

S)

75

TC=–40°C

25°C

125°C

(VDS=10V)

–40 00

0.4

0.2

0.6

0.8

1.0

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=3.5AVGS=10V

0 2010 302

10

5

50

100

2000

1000

500

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

3

2

1

5

4

6

7

VSD (V)

IDR (

A)

VG

S=0

V5.10V

3 5 10 500.05

0.1

5

1

0.5

10

20

100 500

VDS (V)

ID (

A)

(TC=25°C)

10ms (1shot)

1ms

100µs

RDS (on) LIMITED

ID (pulse) max

25

30

35

40

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W)


Without Heatsink

N-channel




75





SLA5052(Ta=25°C)

Symbol Ratings Unit

VDSS 150 V

VGSS ±20 V

ID ±10 A


EAS* 160 mJ






Tch 150 °CTstg –40 to +150 °C


PT

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 8 13.5 S VDS=10V, ID=5A

90 115 mΩ VGS=10V, ID=5A

105 130 mΩ VGS=4V, ID=5A


Coss 360 pF VGS=0V

td(on) 30 ns ID=5A,

tr 35 ns VDD 70V,






RDS(ON)

0 2 40

4

2

6

8

10

6

VDS (V)

ID (

A)

8 10

VGS=10V

3.5V

3V

2.8V

2.6V

0 1 20

4

2

6

8

10

3

VGS (V)

ID (

A)

4 5

TC=–40°C

25°C

125°C

(VDS=10V)

0 2 4 60

100

50

150

ID (A)

RD

S (

ON

) (m

Ω)

8 10

VGS=4V

10V

0.05 10.50.1

0.5

0.3

5

1

10

50

ID (A)

Re

(yf

s) (

S)

105

TC=–40°C

25°C

125°C

(VDS=10V)

–40 00

100

50

150

200

250

300

TC (°C)

RD

S (

ON

) (m

Ω)

15010050

VGS=4V

10V

(ID=5A)

0 2010 3030

100

50

500

1000

5000

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

4

2

6

8

10

VSD (V)

IDR (

A)

VG

S=0

V

5V

0.5 1 5 100 20050100.01

0.05

0.1

0.5

5

1

10

50

VDS (V)

ID (

A)

(TC=25°C)

10ms (1shot)

100µs1ms

RDS (ON) LIMITED

ID (pulse) max

25

30

35

40

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W)


Without Heatsink

1

3

2

4

6

5

7

9

8

10

12

11

N-channel

General purpose




76

FET1 FET2 FET3Symbol Specification

Unit ConditionsSpecification

Unit ConditionsSpecification

Unit Conditionsmin typ max min typ max min typ max

V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0VIGSS 100 nA VGS=20V 100 nA VGS=20V 100 nA VGS=20VIDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0VVTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 7 12 S VDS=10V, ID=3.5A 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A

RDS(ON)80 105 mΩ VGS=10V, ID=3.5A 330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A85 115 mΩ VGS=4V, ID=3.5A 370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A

Ciss 1900 pF VDS=10V, 380 pF VDS=10V, 870 pF VDS=10V,Coss 630 pF f=1.0MHz, 95 pF f=1.0MHz, 320 pF f=1.0MHz,Crss 420 pF VGS=0V 25 pF VGS=0V 210 pF VGS=0Vtd(on) 35 ns ID=3.5A, 25 ns ID=2.5A, 25 ns ID=3.5A,

tr 70 ns VDD 70V, 50 ns VDD 70V, 55 ns VDD 70V,td(off) 140 ns RL=20Ω, 55 ns RL=28Ω, 80 ns RL=20Ω,

tf 90 ns VGS=5V, see Fig.3 on page 16. 40 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.VSD 1.0 1.5 V ISD=7A, VGS=0V 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0Vtrr 620 ns IF=±100mA 180 ns IF=±100mA 500 ns IF=±100mA

SymbolRatings

UnitFET1 FET2 FET3

VDSS 150 VVGSS +20, –10 V

ID ±7 ±5 ±7 AID(pulse)*1 ±15 ±10 ±15 A

EAS*2 15 mJIAS 5 A


35 (Tc=25°C, with all circuits operating, with infinite heatsink) Wθ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/Wθ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/WVISO 1000 (Between fin and lead pin, AC) VrmsTch 150 °CTstg –40 to +150 °C

SLA5054 External dimensions A • • • SLA (15-pin)

N-channel

General purpose

Absolute maximum ratings Equivalent circuit diagram

*1 : PW≤100µs, duty≤50%*2 : VDD=25V, L=1.0mH, IL=5A unclamped, RG=50Ω, see Fig. E on page 15.

(Ta=25°C)

Characteristic curvesID-VDS Characteristics (Typical) FET1 FET2 FET3

ID (

A)

5

6

7

4

3

2

1

0

VDS (V)0 2 4 6 8 10

VGS=2.0V

2.2V

2.4V

2.6V3.0V

10V

ID-VGS Characteristics (Typical) FET1 FET2 FET3

RDS(ON)-ID Characteristics (Typical) FET1 FET2 FET3

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VGS (V)0 1 2 3 4

ID (

A)

5

6

7

4

3

2

1

0

25°C

–40°

C

TC=1

25°C

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

ID (A)0 1 2 3 4 5 6 7

100

90

80

70

60

50

RD

S (

ON

) (m

Ω)

4V

VGS=10V

ID (A)

RD

S (

ON

) (m

Ω)

4V400

500

300

200

100

00 1 2 3 4 5

VGS=10V

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

Electrical characteristics (Ta=25°C)

Pin 4 : NC

2

3

1

5

6

7

8

9

10

11

12

15

13

14

FET-1 FET-1 FET-2 FET-2 FET-3 FET-3

77

SLA5054Re(yfs)-ID Characteristics (Typical) FET1 FET2 FET3

RDS(ON)-TC Characteristics (Typical) FET1 FET2 FET3

IDR-VSD Characteristics (Typical) FET1 FET2 FET3

PT-Ta Characteristics

ID (A)

Re

(yf

s) (

S)

125°C25°CTC=–40°C

100

10

0.1

1

0.05 0.1 0.5 1 5 7

(VDS=10V)

ID (A)

Re

(yf

s) (

S)

TC=–40°C

25°C

125°C

10

5

1

0.5

0.30.05 0.1 0.5 1 5

(VDS=10V)

VSD (V)

IDR (

A)

10V

4VVGS=0V

7

6

5

4

3

2

1

00 0.5 1.0 1.5

VSD (V)

IDR (

A)

10V

4VVGS=0V

5

4

3

2

1

00 0.5 1.0 1.5

VSD (V)

IDR (

A)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT (

W)

Capacitance-VDS Characteristics (Typical) FET1 FET2 FET3

Safe Operating Area (SOA) FET1 FET2 FET3

VDS (V)

(TC=25°C)

ID (

A)

ID (pulse) MAX

1-Circuit Operation

RDS (on) LIMITED10ms (1shot)

1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

VDS (V)

ID (

A)

ID (pulse) MAX

RDS (on) L

IMITED

10ms (1shot)

1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

(TC=25°C)

1-Circuit Operation

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation

ID (A)

Re

(yf

s) (

S)

TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

TC (°C)

RD

S (

ON

) (m

Ω)

200

100

0–40 0 50 100 150

(ID=3.5A)

4V

VGS=10V

TC (°C)

RD

S (

ON

) (Ω

)

4V

VGS=10V

1.0

0.5

0–40 0 50 100 150

(ID=2.5A)

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

(ID=3.5A)

VDS (V)0 10 20 30 40 50

Cap

acita

nce

(pF

)

10000

1000

100

50

VGS=0Vf=1MHz

Coss

Crss

Ciss

Cap

acita

nce

(pF

)

Coss

Crss

1000

100

500

10

50

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

78

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2


(Ta=25°C)

Symbol Unit

VDSS 150 V

VGSS +20, –10 V

ID ±5 ±7 A

ID (pulse)* ±10 ±15 A






Tch 150 °C

Tstg –40 to +150 °C

* : PW≤100µs, duty≤50%







VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

VGS=2.2V

5

4

3

2

1

00 2 4 6 8 10

ID (A)

RD

S (

ON

) (m

Ω)

4V400

500

300

200

100

00 1 2 3 4 5

VGS=10V

TC (°C)

(ID=2.5A)

RD

S (

ON

) (Ω

)

4V

VGS=10V

1.0

0.5

0–40 0 50 100 150

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0-40 0 50 100 150

(ID=3.5A)

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

N-channel

General purpose

PT

2

3

1

4

5

6

7

8

9

10

FET-1 FET-2 FET-2 FET-2 FET-2

11

12

RatingsFET 1 FET 2

79

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2


(Ta=25°C)

FET 1 FET 2




V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V

IGSS 100 nA VGS=20V 100 nA VGS=20V

IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V

VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A

330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A


Ciss 380 pF VDS=10V, 870 pF VDS=10V,

Coss 95 pF f=1.0MHz, 320 pF f=1.0MHz,

Crss 25 pF VGS=0V 210 pF VGS=0V

td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,

tr 50 ns VDD 70V, 55 ns VDD 70V,

td (off) 55 ns RL=28Ω, 80 ns RL=20Ω, VGS=5V,

tf 40 ns VGS=5V, see Fig.3 on page 16. 50 ns see Fig.3 on page 16.

VSD 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V

trr 180 ns IF=±100mA 500 ns IF=±100mA

SLA5055Electrical characteristics




ID (A)

Re

(yf

s) (

S) TC=–40°C

25°C

125°C

10

5

1

0.5

0.30.05 0.1 0.5 1 5

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

1000

100

500

10

50

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR (

A)

10V

4VVGS=0V

5

4

3

2

1

00 0.5 1.0 1.5

VDS (V)

(TC=25°C)

ID (

A)

ID (pulse) MAX

1-Circuit Operation

RDS (on) L

IMITED

10ms (1shot)

1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT (

W)

ID (A)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR (

A)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation

RDS(ON)

80

(Ta=25°C)

Symbol Unit

VDSS 200 V

VGSS ±20 V

ID ±7 A

ID(pulse) * ±15 A






Tch 150 °C

Tstg –40 to +150 °C

* : PW≤100µs, duty≤50%




N-channel

General purpose

PT

Pin 4 : NC

RatingsFET 1 FET 2

2

3

1

5

6

7

8

9

10

11

12

15

13

14


(Ta=25°C)

FET 1 FET 2





IGSS ±100 nA VGS=±20V ±100 nA VGS=±20V


VTH 2.0 4.0 V VDS=10V, ID=1mA 2.0 4.0 V VDS=10V, ID=1mA

Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A 2.5 5.0 S VDS=10V, ID=3.5A

RDS(ON) 130 175 mΩ VGS=10V, ID=3.5A 270 350 mΩ VGS=10V, ID=3.5A




td (on) 20 ns ID=3.5A, 20 ns ID=3.5A,


td (off) 90 ns RL=28.6Ω, 55 ns RL=28.6Ω,

tf 70 ns VGS=10V, see Fig. 3 on page 16. 75 ns VGS=10V, see Fig. 3 on page 16.




81


N-channel

General purpose

Absolute maximum ratings Electrical characteristics(Ta=25°C)


Characteristic curvesID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

Re (yfs)-ID Characteristics (Typical) RDS (ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)


VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

VGS=2.2V

7

6

5

4

3

2

1

00 2 4 6 8 10 VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

RD

S (

ON

) (m

Ω)

4V

VGS=10V

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

ID (A)

(VDS=10V)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

TC (°C)

(ID=3.5A)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR (

A)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)


10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT (

W)

2

3

1

4

5

6

7

8

9

10

11

12


PT

Symbol Ratings Unit

VDSS 150 V

VGSS +20, –10 V

ID ±7A A

ID (pulse) ±15 (PW≤1ms, Du≤1%) A

EAS* 100 mJ






Tch 150 °CTstg –40 to +150 °C

SymbolSpecification

Unit Conditionsmin typ max

V(BR)DSS 150 V ID=100µA, VGS=0VIGSS 100 nA VGS=20VIDSS 100 µA VDS=150V, VGS=0VVTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 4 9 S VDS=10V, ID=3.5A

RDS(ON)150 200 mΩ VGS=10V, ID=3.5A170 230 mΩ VGS=4V, ID=3.5A

Ciss 870 pF VDS=10V,Coss 320 pF f=1.0MHz,Crss 210 pF VGS=0Vtd(on) 25 ns ID=3.5A,

tr 55 ns VDD 70V,td(off) 80 ns RL=20Ω,

tf 50 ns VGS=5V, see Fig. 3 in page 16.VSD 1.0 1.5 V ISD=7A, VGS=0Vtrr 500 ns ISD=±100mA

(Ta=25°C)

82

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





8

6

2

4

00 2 4 6 8 10

VDS (V)

ID (

A)

4.5V

4.0V

3.5V

VGS=3.0V

10V

0

6

8

0 2 64 10

ID (

A)

VGS (V)

4

2

8

25°C

Ta=40°C

(VDS=10V)

125°C

0.5

0.6

0.4

0.3

0.2

0.1

00 2 64 8

ID (A)

(Ta=25°C)

RD

S (

ON

) (Ω

) VGS=4V

VGS=10V

–400.2

–25 50250 100 12575 150

0.4

0.3

0.6

0.5

0.8

0.7

Tc (°C)

ID=2AVGS=4V

RD

S (

ON

) (Ω

)

0 –10

–8

–6

0

VDS (V)

ID (

A)

–2 –6–4 –8

–2

–4

–4.5V

–10V

–4.0V

–3.6V

–3.2V

VGS=–2.7V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(Ta=25°C)

VGS= –4V

VGS= –10V

–400.2

0

0.4

0.6

0.7

0.8

Tc (°C)

RD

S (

ON

) (Ω

)

50 100 150–25 25 75 125

0.5

0.3

ID= –2AVGS=–10V

ID (

A)

VGS (V)0 –10–4–2 –6 –8

–8

–6

0

–2

–4

Tc= –40°C

125°C

25°C

(VDS=–10V)

SLA5059

10

12

1

7

5

8

3

6

2

4

9

11

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID 4 –4 A

ID(pulse) 8 (PW≤1ms, Duty≤25%) –8 (PW≤1ms, Duty≤25%) A





Tch 150 °C

Tstg –40 to +150 °C

PT



3-phase motor drive External dimensions B • • • SLA (12-pin)



83

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5059(Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V 10 µA VGS= 20V



Re(yfs) 2.5 S VDS=10V, ID=2A 3 S VDS=–10V, ID=–2A

RDS(ON) 0.55 Ω VGS=4V, ID=2A 0.55 Ω VGS=–10V, ID=–2A

Ciss 150 pFVDS=10V, f=1.0MHz,

320 pFVDS=–10V, f=1.0MHz,

Coss 70 pFVGS=0V

130 pFVGS=0V

Crss 15 pF 40 pF

td(on) 12 nsID=2A, VDD 20V,

20 nsID=–2A, VDD –20V,

tr 40 ns RL=10Ω, VGS=5V,

95 nsRL=10Ω, VGS=–5V,

td(off) 40 nssee Fig. 3 on page 16.

70 ns see Fig. 4 on page 16.

tf 25 ns 60 ns

VSD 1.2 V ISD=4A, VGS=0V –1.1 V ISD=–4A, VGS=0V

ISD=2A, VGS=0V, ISD=–2A, VGS=0V,trr 75 ns

di/dt=100A/µs75 ns

di/dt=100A/µs


0.10.005 0.1 1

1

10

ID (A)

Re

(yf

s) (

S)

8

Tc= –40°C

25°C

125°C

(VDS=10V)

0 10 20 30 40 501

100

1000

VDS (V)

Cap

acita

nce

(pF

)

10

Ciss

Coss

Crss

VGS=0Vf=1MHz

0.0 1.0 2.01.5

2

0

8

IDR (

A)

VSD (V)0.5

4

6

VGS=10V

4V

0V

1 10 100

1

0.1

10ID

(A

)

VDS (V)

RDS (on) LIMITED10ms

(Tc=25°C)

1ms

100µs

0.1–0.1

1

10

ID (A)

Re

(yf

s) (

S)

–1 –8–0.005

Tc=–40°C

25°C

125°C

(VDS=–10V)

0 –10 –20 –30 –40 –50

10

100

1000

VDS (V)

Cap

acita

nce

(pF

)

1

Ciss

Coss

Crss

VGS=0Vf=1MHz

0.0 –1.0 –2.0–1.5

–2

0

–8

IDR (

A)

VSD (V)–0.5

–4

–6

VGS=–10V

–4V

0V

–1–0.1

–10 –100

–1

–10

ID (

A)

VDS (V)

100µs

1ms

10ms

RDS (ON) LIMITED

(Tc=25°C)

25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT (

W)

84

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5060

10

12

1

7

5

8

3

6

2

4

9

11

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 ±20 V

ID 6 –6 A

ID(pulse) 10 (PW≤1ms, duty≤25%) –10 (PW≤1ms, duty≤25%) A,






Tch 150 °C

Tstg –40 to +150 °C

PT



3-phase motor drive External dimensions A • • • SLA (12-pin)



0 2 10

10

8

4

0

VDS (V)

ID (A

)

4 6 8

6

2

(Ta=25°C)

VGS=2.5V

2.7V

3.0V

3.3V

3.5V

3.7V

4V

10V

0 1 7 10

ID (A)2 3 4 5 6 8 9

0

0.10

0.05

0.15

0.25

0.20

0.30

RD

S (

ON

) (Ω

)

4V

VGS=10V

(Ta=25°C)

---40 0 50 100 150

TC (°C)

0

0.10

0.05

0.20

0.15

0.30

0.25

0.35

RD

S (

ON

) (Ω

)

(ID=3A)

4V

VGS=10V

0 1 2 3 4

VGS (V)5

6

0

8

10ID

(A

)

4

2

(VDS=10V)

25°C

–40°C

Ta=125°C

0 ---2 ---10VDS (V)

---4 ---6 ---8

–2.7V

–3.0V

–3.3V

–3.5V

–3.7V

–10V

–4V

VGS=–2.5V

(Ta=25°C)---10

---8

---4

0

ID (

A) ---6

---2

VGS (V)0 ---1 ---5---2 ---3 ---4

ID (

A)

---10

---8

---9

0

---2

---1

---3

---4

---5

---6

---7

Ta=–40°C

25°C

–40°C

(VDS=---10V)

0

0.10

0.20

0.25

0.30

RD

S (

ON

) (Ω

)

0.15

0.05

0 ---2

ID (A)---4 ---6 ---8 ---10

–10V

VGS=–4V

(Ta=25°C)

---40 0 50 100 150

TC (°C)

0

0.20

0.25

0.30

0.35

RD

S (

ON

) (Ω

)

0.10

0.15

0.05

(ID=---3A)

VGS=–4V

–10V

85

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





0.1

1

10

Re

(yfs

) (S

)

0.05 1

ID (A)100.1

25°C

125°C

Ta=–40°C

(VDS=10V)

–0.1 –1 –10

ID (A)–0.05

0.1

1

10

Re

(yfs

) (S

)

(VDS=---10V)

25°C

125°C

Ta=–40°C

0 1.0 1.5

VSD (V)0.5

0

6

8

10

IDR

(A

)

4

2

4V

0VVGS=–1

0V

(Ta=25°C)

0 ---1.5

VSD (V)---1.0---0.5

IDR

(A

)

---10

---8

0

---6

---2

---4 –4V

0V

VGS=–1

0V

(Ta=25°C)

0.1 1 10 100

VDS (V)

0.1

1

10

20ID

(A

)

RDS (O

N)LI

MIT

ED

100µs

1ms

10ms

TC=25°CSINGLE PULSE

–0.1 –1 –10 –100

VDS (V)

–0.1

–10

–20

ID (

A)

–1


RD

S (O

N)

LIM

ITED

1ms

10ms

100µs

25

30

35

40

20

15

10

5

0

Without Heatsink


0 50 100 150

Ta (°C)

PT

(W

)

With Silicon GreaseNatural CoolingAll Circuits Operating

(Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V






790 pFVDS=–10V, f=1.0MHz,

Coss 160 pFVGS=0V

310 pFVGS=0V

Crss 35 pF 90 pF

td(on) 16 nsID=3A, VDD=20V,

40 nsID=–3A, VDD=20V,

tr 65 ns RL=6.67Ω, VGS=5V,

110 nsRL=6.67Ω, VGS=–5V,



tf 45 ns 80 ns



di/dt=100A/µs85 ns

di/dt=100A/µs


SLA5060

0 10 20 30 40 50VDS (V)

10

100

2000

Cap

acita

nce

(pF

)

1000

VGS=0Vf=1MHz

Ciss

Coss

Crss

(Ta=25°C)

0 –10 –20 –30 –40 –50

VDS (V)

100

1000

2000

Cap

acita

nce

(pF

)

10

Ciss

Coss

Crss

VGS=0Vf=1MHz(Ta=25°C)N-ch P-ch

86

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch






N-channel+P-channel

3-phase motor drive

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 ±20 V

ID 10 –6 A

ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A






Tch 150 °C

Tstg –40 to +150 °C

PT




10

12

1

7

5

8

3

6

2

4

9

11

0 2 10

VDS (V)4 6 8

15

12

14

4

6

0

ID (

A)

8

10

2 VGS=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(Ta=25°C)

0 1 2 3 4

VGS (V)5

0

ID (

A)

2

4

6

8

10

12

14

15(VDS=10V)

25°C

–40°C

TC=125°C

0 1 7 10 11 12 13 14 15

ID (A)2 3 4 5 6 8 9

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

Ta=25°CVGS=4V

---40 0 50 100 150

TC (°C)

0.00

0.02

RD

S (

ON

) (Ω

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

ID=5AVGS=4V

0 –2 –10

VDS (V)–4 –6 –8

0

ID (

A)

–2

–4

–6

–8

–10

–12

–14

–15

VGS=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

–10V

(Ta=25°C)

0 –1 –2 –3 –4

VGS (V)–5

0

ID (

A)

–2

–4

–6

–8

–10

–12

–14

–15(VDS=–10V)

25°C

–40°C

TC=125°C

0 –1 –7 –10–11 –12–13–14–15

ID (A)–2 –3 –4 –5 –6 –8 –9

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

Ta=25°CVGS=–10V

---40 0 50 100 150

TC (°C)

0.00

0.02

RD

S (

ON

) (Ω

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

ID=–5AVGS=–10V

87

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5061

0 1.0 1.5VSD (V)

0.50

15

IDR

(A

)

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0V

4V

VGS=

10V

(Ta=25°C)

0.05 1

ID (A)10 200.1

0.1

1

10

20

Re

(yfs

) (S

)

25°C

125°C

TC=–40°C

(VDS=10V)

0.1 1 10 100

VDS (V)

0.1

1

10

20 ID

(A

)

1ms10m

s

RDS (O

N)

LIM

ITED

100µs


25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT

(W

)

0 –1.0 –1.5VSD (V)

–0.50

–15

IDR

(A

)

–1

–2

–3

–4

–5

–6

–7

–8

–9

–10

–11

–12

–13

–14

(Ta=25°C)

0V

–4VVGS=

–10V

–0.1 –1 –10 –100VDS (V)

–0.1

–1

–10

–20

ID (

A)

1ms10m

s

RDS (O

N)

LIM

ITED

100ms


–0.05 –1

ID (A)–10 –20–0.1

0.1

1

10

20

Re

(yfs

) (S

)

(VDS=–10V)

25°C

125°C

TC=–40°C

(Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V 10 µA VGS=±20V



Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A



1200 pFVDS=–10V, f=1.0MHz,

Coss 225 pFVGS=0V

440 pFVGS=0V

Crss 50 pF 120 pF


50 nsID=–5A, VDD 20V,


170 nsRL=4Ω, VGS=–5V



tf 55 ns 100 ns


ISD=5A, VGS=0V ISD=–5A, VGS=0Vtrr 75 ns

di/dt=100A/µs100 ns

di/dt=100A/µs


0 10 20 30 40 50VDS (V)

10

100

5000

Cap

acita

nce

(pF

) 1000

Ciss

Coss

Crss

VGS=0Vf=1MHz(Ta=25°C)

0 –10 –20 –30 –40 –50VDS (V)

10

100

5000

Cap

acita

nce

(pF

) 1000Ciss

Coss

Crss


88

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch






N-channel+P-channel

3-phase motor drive

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 ±20 V

ID 10 –10 A







Tch 150 °C

Tstg –40 to +150 °C

PT




5

3

2

4

7

8

6

10

12

11

9

1

0 2 10

VDS (V)4 6 8

15

12

14

4

6

0

ID (

A)

8

10

2 VGS=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(Ta=25°C)

0 1 2 3 4

VGS (V)5

0

ID (

A)

2

4

6

8

10

12

14

15(VDS=10V)

25°C

–40°C

TC=125°C

0 1 7 10 11 12 13 14 15

ID (A)2 3 4 5 6 8 9

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

Ta=25°CVGS=4V

---40 0 50 100 150

TC (°C)

0.00

0.02

RD

S (

ON

) (Ω

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

ID=–5AVGS=–10V

---40 0 50 100 150

TC (°C)

0.00

0.02

RD

S (

ON

) (Ω

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

ID=5AVGS=4V

0 –2 –10

VDS (V)–4 –6 –8

0

ID (

A)

–2

–4

–6

–8

–10

–12

–14

–15

VGS=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

–10V

(Ta=25°C)

0 –1 –2 –3 –4

VGS (V)–5

0

ID (

A)

–2

–4

–6

–8

–10

–12

–14

–15(VDS=10V)

25°C

–40°C

TC=125°C

0 –1 –7 –10–11 –12–13–14–15

ID (A)–2 –3 –4 –5 –6 –8 –9

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

Ta=25°CVGS=–10V

89

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SLA5064(Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V 10 µA VGS=±20V



Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A



1200 pFVDS=–10V, f=1.0MHz,

Coss 225 pFVGS=0V

440 pFVGS=0V

Crss 50 pF 120 pF


50 nsID=–5A, VDD 20V,





tf 55 ns 100 ns



di/dt=100A/µs100 ns

di/dt=100A/µs


0 1.0 1.5VSD (V)

0.50

15

IDR

(A

)

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0V

4V

VGS=

10V

(Ta=25°C)

0.05 1

ID (A)10 200.1

0.1

1

10

20

Re

(yf

s) (

S)

25°C

125°C

TC=–40°C

(VDS=10V)

0.1 1 10 100

VDS (V)

0.1

1

10

20 ID

(A)

1ms10m

s

RDS (O

N)

LIM

ITED

100µs


0 –1.0 –1.5VSD (V)

–0.50

–15

IDR

(A

)

–1

–2

–3

–4

–5

–6

–7

–8

–9

–10

–11

–12

–13

–14

(Ta=25°C)

0V

–4VVGS=

–10V

–0.05 –1

ID (A)–10 –20–0.1

0.1

1

10

20

Re

(yf

s) (

S)

(VDS=–10V)

25°C

125°C

TC=–40°C

–0.1 –1 –10 –100VDS (V)

–0.1

–1

–10

–20

ID (

A)

1ms10m

s

RDS (O

N)

LIM

ITED

100µs


0 50 100 150

Ta (°C)

25

25

30

30

35

40

20

15

10

5

0

PT

(W

)

Without Heatsink


All Circuits Operating

0 10 20 30 40 50VDS (V)

10

100

5000

Cap

acita

nce

(pF

) 1000

Ciss

Coss

Crss


0 –10 –20 –30 –40 –50VDS (V)

10

100

5000

Cap

acita

nce

(pF

) 1000Ciss

Coss

Crss


90





SLA5065(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 6 S VDS=10V, ID=3.5A

RDS(ON) 0.1 Ω VGS=10V, ID=3.5A



Crss 75 pF VGS=0V


tr 90 ns VDD 20V,



VSD 1.1 V ISD=7A, VGS=0V

trr 80 ns ISD=3.5A, di/dt=100A/µA


(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 7 A

ID(pulse) 15 (PW≤100µs, Du≤1%) A

EAS* 60 mJ

IAS 7 A

4.8 (Ta=25°C, with all circuits operating, without heatsink)W

35 (Tc=25°C, with all circuits operating, with infinite heatsink)




Tch 150 °CTstg –40 to +150 °C


PT

N-channel




3

1

5

4

2

7

8

10

9

6

0 2 4 6 8 10

VDS (V)

0

3

10

15

ID (

A)

VGS=2.5V

2.7V

3.0V

3.3V

3.5V

3.8V

4.0V10V

(Ta=25°C)

0 1 20

8

6

4

2

10

12

1415

3

VGS (V)

ID (

A)

4 5

25°C

–40°C

TC=125°C

(VDS=10V)

00

15

0.05

0.10

0.15

ID (A)

RD

S (

ON

) (Ω

)

5 10

10V

VGS=4V

(Ta=25°C)

00 0.5 1.0 1.5

15

IDR

(A

)

VSD (V)

5

10

4V

0V

VGS=

10V

(Ta=25°C)

–40 0 50 100 150

TC (°C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

(ID=3.5A)

VGS=4V

10V

0.050.1

0.1 1

1

ID (A)

Re

(yf

s) (

S)

20

10

2010

(VDS=10V)

TC= –40°C

25°C

125°C

0 10 20 30 40 5010

100

5000

1000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

0.1 1 10 100VDS (V)

0.1

1

10

20

ID (

A)

1ms

10ms

RDS (O

N)

LIM

ITED

100µs


0 50 100 150

Ta (°C)

40

10

20

30

0

PT

(W

)



Without Heatsink

Pins 11, 12, 13, 14, 15 : NC

91





SLA5068(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 6 S VDS=10V, ID=3.5A

RDS(ON) 0.1 Ω VGS=10V, ID=3.5A



Crss 75 pF VGS=0V


tr 90 ns VDD 20V,




trr 80 ns ISD=3.5A, di/dt=100A/µA


(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 7 A

ID(pulse) 15 (PW≤100µs, Du≤1%) A

EAS* 60 mJ

IAS 7 A

5 (Ta=25°C, with all circuits operating, without heatsink)W

50 (Tc=25°C,with all circuits operating, with infinite heatsink)




Tch 150 °CTstg –40 to +150 °C


PT

N-channel




Pins 8, 9 : NC

3

5

4

2

7

10

1

11

6

15

12

13

14

0 2 4 6 8 10

VDS (V)

0

3

10

15

ID (

A)

VGS=2.5V

2.7V

3.0V

3.3V

3.5V

3.8V

4.0V10V

(Ta=25°C)

0 1 20

8

6

4

2

10

12

1415

3

VGS (V)

ID (

A)

4 5

25°C

–40°C

TC=125°C

(VDS=10V)

00

15

0.05

0.10

0.15

ID (A)

RD

S (

ON

) (Ω

)

5 10

10V

VGS=4V

(Ta=25°C)

00 0.5 1.0 1.5

15

IDR

(A

)

VSD (V)

5

10

4V

0V

VGS=

10V

(Ta=25°C)

–40 0 50 100 150

TC (°C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

(ID=3.5A)

VGS=4V

10V

0.050.1

0.1 1

1

ID (A)

Re

(yf

s) (

S)

20

10

2010

(VDS=10V)

TC= –40°C

25°C

125°C

0 10 20 30 40 5010

100

5000

1000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

0.1 1 10 100VDS (V)

0.1

1

10

20

ID (

A)

1ms

10ms

RDS (O

N)

LIM

ITED

100µs


0 50 100 150

Ta (°C)

60

10

20

30

40

50

0

PT

(W

)


Without Heatsink


92

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2





(Ta=25°C)

Symbol Unit

VDSS 150 V

VGSS +20, –10 V

ID ±7 A

ID(pulse) ±15 (PW≤100µs, duty≤1%) A

EAS* 100 mJ






Tch 150 °C

Tstg –40 to +150 °C





N-channel

General purpose

PT

RatingsFET 1 FET 2

2

3

1

5

6

7

8

9

10

11

12

15

13

14


Pin 4 : NC

ID (

A)

5

6

7

4

3

2

1

0

VDS (V)0 2 4 6 8 10

VGS=2.0V

2.2V

2.4V

2.6V3.0V

10V

VGS (V)

ID (

A)

Tc=

125°

C25

°C

–40°

C

7

6

5

4

3

2

1

00 1 2 3 4

(VDS=10V)

ID (A)0 1 2 3 4 5 6 7

100

90

80

70

60

50

RD

S (

ON

) (m

Ω)

4V

VGS=10V

TC (°C)

RD

S (

ON

) (m

Ω)

200

100

0–40 0 50 100 150

(ID=3.5A)

4V

VGS=10V

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

(ID=3.5A)

93

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2





(Ta=25°C)

FET 1 FET 2





IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V



Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A






td (on) 35 ns ID=3.5A 25 ns ID=3.5A,


td(off) 140 ns RL=20Ω 80 ns RL=20Ω,

tf 90 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.




RDS(ON)

ID (A)

Re

(yf

s) (

S)

125°C25°CTC=–40°C

100

10

0.1

1

0.05 0.1 1 50.5 7

(VDS=10V)

VDS (V)0 10 20 30 40 50

Cap

acita

nce

(pF

)

10000

1000

100

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

VSD (V)

IDR

(A

)

10V

4VVGS=0V

7

6

5

4

3

2

1

00 0.5 1.0 1.5

VDS (V)

(TC=25°C)ID

(A

)

ID (pulse) MAX


1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

1-Circuit Operation

40

60

20

5

00 50 100 150

Ta (°C)

PT

(W

)

Without Heatsink



ID (A)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR

(A

)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation

94





SLA5072(Ta=25°C)






Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A



Coss 280 pF VGS=0V


tr 30 ns VDD=100V,




trr 75 ns ISD=3.5A, VGS=0V, di/dt=100A/µs


(Ta=25°C)

Symbol Ratings Unit

VDSS 250 V

VGSS ±20 V

ID 7 A

ID(pulse) 15 (PW≤1ms, Du≤1%) A

EAS* 55 mJ

IAS 7 A





Tch 150 °CTstg –40 to +150 °C


PT

N-channel

3-phase DC motor 100V AC direct drive External dimensions A • • • SLA (15-pin)



Pins 8,9 : NC

3

5

4

2

7

10

1

11

6

15

12

13

14

0 2 4 6 8 10

VDS (V)

0

1

2

3

4

5

6

7

ID (

A)

VGS=4V

4.5V

5V

6V

5.5V

10V

3 5 10 100 300500.03

0.1

0.05

0.5

5

1

10

20

VDS (V)

ID (

A)

(TC=25°C)

RDS (ON) LIM

ITEDID (pulse) max

10ms (1shot)

100ms

1ms

0 2010 302

10

5

50

100

2000

1000

500

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0.05 10.50.10.3

1

0.5

5

10

ID (A)

Re

(yf

s) (

S)

75

TC=–40°C

25°C

125°C

(VDS=10V)

–40 00

0.4

0.2

0.6

0.8

1.0

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=3.5AVGS=10V

0 21 3 40

0.2

0.1

0.3

0.4

0.5

5

ID (A)

RD

S (

ON

) (Ω

)

6 7

(VGS=10V)

0 2 4 60

5

4

3

2

1

6

7

8

VGS (V)

ID (

A)

(VDS=10V)

TC=–40°C

25°C

125°C

0 0.5 1.0 1.50

3

2

1

5

4

6

7

VSD (V)

IDR

(A

)

(VGS=0V)

25

30

35

40

20

15

10

5

0

Without Heatsink


0 50 100 150

Ta (°C)

PT

(W

)


95





SLA5073(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 5.5 S VDS=10V, ID=3A

RDS(ON) 0.3 Ω VGS=4V, ID=3A



Crss 35 pF VGS=0V

td(on) 16 ns ID=3A,

tr 65 ns VDD 20V,




trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs


(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 5 A







Tch 150 °CTstg –40 to +150 °C

PT

N-channel




3

5

4

2

7

10

8

11

6

1 13

12

15

14

11

0 2 4 6 80

3

2

1

4

5

8

7

6

10

VDS (V)

ID (

A)

VGS=2.7V

3.0V

3.3V

3.5V

3.8V

10V

4V

(Ta=25°C)

0 1 2 3 40

5

4

3

2

1

6

8

7

5

VGS (V)

ID (

A)

TC=125°C25°C

–40°C

(VDS=10V)

0 21 3 40

0.10

0.15

0.05

0.20

0.25

0.30

5

ID (A)

RD

S (

ON

) (Ω

)

6 7 8

Ta=25°CVGS=4V

0 0.5 1.0 1.50

3

2

1

5

4

6

7

8

VSD (V)

IDR

(A

)

0V

VGS=

10V

4V

(Ta=25°C)

0.05 10.10.1

1

10

20

ID (A)

Re

(yf

s) (

S)

10

(VDS=10V)

Ta=–40°C

25°C

125°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Coss

Crss

(Ta=25°C)

25

30

35

40

20

15

10

5

0

Without Heatsink


0 50 100 150

Ta (°C)

PT

(W

)


–40 00.00

0.10

0.15

0.05

0.20

0.30

0.25

0.35

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=3AVGS=4V

0.1 1 10 1000.1

1

10

ID (

A)

VDS (V)

(TC=25°C, SINGLE PULSE)

1ms

10ms

RD

S (O

N)

LIM

ITED

100µs

96





SLA5074(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 5 A





θ j-c 5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W


Tch 150 °CTstg –40 to +150 °C

PT

N-channel




3

1

5

4

2

7

8

10

9

6

Pins 11, 12, 13, 14, 15 : NC

150

25

30

20

15

10

5

00 50 100

Ta (°C)

PT

(W

)

Without Heatsink



0 2 4 6 80

3

2

1

4

5

8

7

6

10

VDS (V)

ID (

A)

VGS=2.7V

3.0V

3.3V

3.5V

3.8V

10V

4V

(Ta=25°C)

0 1 2 3 40

5

4

3

2

1

6

8

7

5

VGS (V)

ID (

A)

TC=125°C25°C

–40°C

(VDS=10V)

0 21 3 40

0.10

0.15

0.05

0.20

0.25

0.30

5

ID (A)

RD

S (

ON

) (Ω

)

6 7 8

Ta=25°CVGS=4V

0 0.5 1.0 1.50

3

2

1

5

4

6

7

8

VSD (V)

IDR

(A

)

0V

VGS=

10V

4V

(Ta=25°C)

0.05 10.10.1

1

10

20

ID (A)

Re

(yf

s) (

S)

10

(VDS=10V)

Ta=–40°C

25°C

125°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Coss

Crss

(Ta=25°C)

–40 00.00

0.10

0.15

0.05

0.20

0.30

0.25

0.35

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=3AVGS=4V

0.1 1 10 1000.1

1

10

ID (

A)

VDS (V)


1ms

10ms

RD

S (O

N)

LIM

ITED

100µs

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA





Crss 35 pF VGS=0V

td(on) 16 ns ID=3A,

tr 65 ns VDD 20V,






97





SLA5075(Ta=25°C)

Symbol Ratings Unit

VDSS 500 V

VGSS ±30 V

ID ±5 A


EAS* 45 mJ





Tch 150 °CTstg –40 to +150 °C

PT

N-channel

3-phase DC motor 200V AC direct drive External dimensions A • • • SLA (15-pin)



Pins 8, 9 : NC

(Ta=25°C)






Re(yfs) 2.4 4.0 S VDS=10V, ID=2.5A

RDS(ON) 1.05 1.4 Ω VGS=10V, ID=2.5A


Coss 290 pF VGS=0V


tr 25 ns VDD 200V,




trr 75 ns ISD=2.5A, di/dt=100A/µs


3

5

4

2

7

10

1

11

6

15

12

13

14


0 5 10 15

1

0

2

3

4

5

20

VDS (V)

ID (

A)

VGS=3.5V

4V

4.5V

5V

10V

0 2 40

5

4

3

2

1

6

VGS (V)

ID (

A)

(VDS=20V)

TC=125°C25°C

–40°C

0 21 3 40

1.0

0.5

1.5

2.0

5

ID (A)

RD

S (

ON

) (Ω

)(VGS=10V)

0.05 10.1 0.50.2

0.5

1

5

10

ID (A)

Re

(yf

s) (

S)

5

(VDS=20V)

125°C25°CTa=–40°C

–40 00

3.0

2.5

2.0

1.5

1.0

0.5

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=2.5AVGS=10V

0 10 20 30 40 5010

500

100

50

2000

1000

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 0.5 1.0 1.50

3

2

1

5

4

VSD (V)

IDR

(A

)

(Ta=25°C)

3 5 10 10050 6000.05

0.1

1

0.5

20

10

5

ID (

A)

VDS (V)

1msRDS (O

N) LIM

ITED

100µs

ID(pulse) max

(TC=25°C)

40

60

20

5

00 50 100 150

Ta (°C)

PT

(W

)


Without Heatsink


98





SLA5077(Ta=25°C)

Symbol Ratings Unit

VDSS 150 V

VGSS +20, –10 V

ID ±10 A

ID(pulse) ±40 (PW≤100µs, duty≤1%) A

EAS* 100 mJ

IAS 10 A






Tch 150 °CTstg –40 to +150 °C

PT

N-channel



Absolute maximum ratings Electrical characteristics (Ta=25°C)



IGSS ±100 nA VGS=20V, –10V


VTH 1.0 2.0 V VDS=10V, ID=250µA


RDS(ON)150 200 mΩ VGS=10V, ID=5A

170 230 mΩ VGS=4V, ID=5A



Crss 210 pF VGS=0V

td(on) 25 ns ID=5A,

tr 50 ns VDD 70V,







1

3

2

4

6

5

9

7

8

12

10

11

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

ID (A)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

(ID=3.5A)

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR

(A

)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation


30

40

50

60

20

10

00 50 100 150

Ta (°C)

PT

(W

)

Without Heatsink


99





SLA5079(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS ±20 V

ID –10 A

ID(pulse) –15 (PW≤1ms, duty≤25%) A



θ j-a 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W



Tch 150 °CTstg –40 to +150 °C

PT

P-channel








VTH –1.0 –2.0 V VDS=–10V, ID=–250µA

Re(yfs) 8.7 S VDS=–10V, ID=–5A

RDS(ON) 0.14 Ω VGS=–10V, ID=–5A

Ciss 1200 pF VDS=–10V,


Crss 120 pF VGS=0V

td(on) 50 ns ID=–5A, VDD –20V,

tr 170 ns RL=4Ω, VGS=–5V,

td(off) 180 ns RG=50Ω,tf 100 ns see Fig. 4 on page 16.

VSD –1.25 V ISD=–10A, VGS=0V

trr 100 ns ISD=–5A, di/dt=100A/µs


2

1

3

6

5

7

11

12

10

0 –2 –4 –6 –80

–2

–4

–6

–8

–10

–12

–14

–15

–10

VDS (V)

ID (

A)

(Ta=25°C)

VGS=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

–10V

0 –1 –2 –3 –40

–4

–2

–6

–10

–8

–12

–14

–15

–5

VGS (V)

ID (

A)

TC=1

25°C

25°C

–40°

C

(VDS=–10V)

0

0.08

0.04

0.12

0.16

0.20

ID (A)

RD

S (

ON

) (Ω

)

–15–20 –4 –6 –8 –10 –12 –14

Ta=25°CVGS=–10V

0.0 –0.5 –1.0 –1.50

–2

–4

–6

–8

–10

–12

–14–15

VSD (V)

IDR

(A

)

0VVGS=–1

0V–4

V

(Ta=25°C)

–40 00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=–5AVGS=–10V

–1 –10–0.1–0.1

–1

–10

–20

ID (A)

Re

(yf

s) (

S)

–20

Tc=–40°C

25°C

125°C

(VDS=–10V)

–0 –10 –20 –30 –40 –5010

100

1000

3000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

–0.1 –1 –10 –100–0.1

–1

–20

–10

ID (

A)

VDS (V)

1ms

10ms

100µs

RDS (O

N)

LIM

ITED


25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT

(W

)


Without Heatsink


100





SLA5080(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 10 A







Tch 150 °CTstg –40 to +150 °C

PT

N-channel






IGSS ±10 µA VGS=±20V


VTH 1.0 2.0 V VDS=10V, ID=250µA





Crss 50 pF VGS=0V

td(on) 25 ns ID=5A, VDD 20V,

tr 110 ns RL=4Ω,

td(off) 90 ns VGS=5V,



trr 75 ns ISD=5A, di/dt=100A/µs


2

3

1

6

7

5

11

10

12

0 2 4 6 8

2

0

4

6

8

10

14

12

15

10

VDS (V)

ID (

A)

VGS=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(Ta=25°C)

0 1 2 3 4 5

VGS (V)

0

12

15

14

10

6

8

4

2

ID (

A)

TC=25°C

25°C

–40°C

(VDS=20V)

0 42 6 80

0.08

0.04

0.12

0.16

0.20

10

ID (A)

RD

S (

ON

) (Ω

)

12 14 15

Ta=25°CVGS=4V

00 0.5 1.0 1.5

15

12

9

IDR

(A

)

VSD (V)

6

3

VGS=

10V

4V

0V

(Ta=25°C)

–40 0 50 100 150

TC (°C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

RD

S (

ON

) (Ω

)

ID=5AVGS=4V

0.050.1

0.1 1 10

1

ID (A)

Re

(yf

s) (

S)

20

10

20

(VDS=10V)

TC=–40°C

125°C

25°C

0 10 20 30 40 5010

100

2000

1000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

0.1 1 10 1000.1

1

20

10

ID (

A)

VDS (V)

TC=25°CSingle Pulse

100µs

1ms10m

s

RDS (O

N) LIM

ITED

25

30

35

40

20

15

10

5

00 50 100 150

Ta (°C)

PT

(W

)


Without Heatsink


102

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2


(Ta=25°C)

Symbol Unit

VDSS 150 V

VGSS +20, –10 V

ID ±7 A

ID (pulse)*1 ±15 A

EAS*2 100 mJ






Tch 150 °C

Tstg –40 to +150 °C*1 : PW≤100µs, duty≤1%*2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.




N-channel

General purpose

PT

RatingsFET 1 FET 2

2

3

FET1 FET2 FET2 FET2 FET2

1

7

8

9

10

11

12

13

14

15 Pins 4, 5, 6 : NC

ID (

A)

5

6

7

4

3

2

1

0

VDS (V)0 2 4 6 8 10

VGS=2.0V

2.2V

2.4V

2.6V3.0V

10V




VGS (V)0 1 2 3 4

ID (

A)

5

6

7

4

3

2

1

0

25°C

–40°

C

TC=1

25°C

ID (A)0 1 2 3 4 5 6 7

100

90

80

70

60

50

RD

S (

ON

) (m

Ω)

4V

VGS=10V

TC (°C)

RD

S (

ON

) (m

Ω)

200

100

0–40 0 50 100 150

(ID=3.5A)

4V

VGS=10V

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

(ID=3.5A)

103

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2






ID (A)

Re

(yf

s) (

S)

125°C25°CTC=–40°C

100

10

0.1

1

0.05 0.1 1 7

(VDS=10V)

VSD (V)

IDR

(A

)

10V

4VVGS=0V

7

6

5

4

3

2

1

00 0.5 1.0 1.5

VDS (V)

(TC=25°C)ID

(A

)

ID (pulse) MAX

1-Circuit Operation


1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

VDS (V)0 10 20 30 40 50

Cap

acita

nce

(pF

)

10000

1000

100

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

ID (A)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR

(A

)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation

30

50

40

20

10

00 50 100 150

Ta (°C)

PT

(W

)



Without Heatsink

RDS(ON)

(Ta=25°C)

FET 1 FET 2





IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V



Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A



Ciss 1600 pF VDS=10V, 870 pF VDS=10V

Coss 380 pF f=1.0MHz, 320 pF f=1.0MHz


td (on) 35 ns ID=3.5A, 25 ns ID=3.5A

tr 70 ns VDD 70V, 55 ns VDD 70V

td (off) 125 ns RL=20Ω, 80 ns RL=20Ω




104





SLA5085(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID 10 A

ID(pulse) 10 (PW≤1ms, duty≤25%) A

EAS* 30 mJ






Tch 150 °CTstg –40 to +150 °C

PT

N-channel








VTH 1.0 2.0 V VDS=10V, ID=250µA


RDS(ON) 0.16 0.22 Ω VGS=4V, ID=3A



Crss 35 pF VGS=0V


tr 65 ns RL=6.67Ω,







2

3

1

4

5

6

7

8

9

10

11

12

0 2 4 6 8

2

0

4

6

8

10

10

VDS (V)

ID (

A)

VGS=2.5V

2.7V

3.0V

3.3V

3.5V

3.7V

4V

10V

(Ta=25°C)

0 1 2 3 4 5

VGS (V)

0

6

8

10

4

2

ID (

A)

Ta=125°C

25°C

(VDS=10V)

–40°C

0 6 82 4 100

0.10

0.05

0.15

0.20

0.30

0.25

ID (A)

RD

S (

ON

) (Ω

)(Ta=25°C)

VGS=10V

4V

00 0.5 1.0 1.5

10

8

6

IDR

(A

)

VSD (V)

4

2

VGS=1

0V

4V

0V

(Ta=25°C)

–40 0 50 100 150

TC (°C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

RD

S (

ON

) (Ω

)

(ID=3A)

VGS=10V

10V

0.050.1

0.1 1

1

ID (A)

Re

(yf

s) (

S)

50

10

10

Ta= –40°C

25°C

125°C

(VDS=10V)

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

25

40

35

30

15

20

10

5

00 50 100 150

Ta (°C)

PT

(W

) With Infinite Heatsink

Without Heatsink


0.1 1 10 1000.1

1

20

10

ID (

A)

VDS (V)

TC=25°C

1-Circuit Operation

1ms10m

s (1shot)RDS

(ON) L

IMIT

ED

100µs

105





(Ta=25°C)

Symbol Ratings Unit

VDSS –60 V

VGSS ±20 V

ID –5 A

ID(pulse) –10 (PW≤1ms, duty≤25%) A






Tch 150 °CTstg –40 to +150 °C

PT







VTH –1.0 –2.0 V VDS=–10V, ID=–250µA

Re(yfs) 4 6 S VDS=–10V, ID=–3A

RDS(ON) 0.14 0.22 Ω VGS=–10V, ID=–3A

Ciss 790 pF VDS=–10V,


Crss 90 pF VGS=0V

td(on) 40 ns ID=–3A, VDD –20V,

tr 110 ns RL=6.67Ω,

td(off) 160 ns VGS=–5V,


VSD –1.0 –1.5 V ISD=–5A, VGS=0V



SLA5086 P-channel


2

1

3

4

5

10

12

11

6

7

8

9

0 –2 –4 –6 –8

–2

0

–4

–6

–8

–10

–10

VDS (V)

ID (

A)

(Ta=25°C)

VGS=–2.5V

–2.7V

–3.0V

–3.3V

–3.5V

–3.7V

–10V –4

V

0 –1 –2 –3 –4 –5

VGS (V)

0

–6

–8

–10

–4

–2

ID (

A)

Ta=125°C

25°C

–40°C

(VDS=–10V)

0 –6 –8–2 –4 –100

0.10

0.05

0.15

0.20

0.30

0.25

ID (A)

RD

S (

ON

) (Ω

)(Ta=25°C)

VGS=–10V

–4V

00 –0.5 –1.0 –1.5

–10

–8

–6

IDR

(A

)

VSD (V)

–4

–2

(Ta=25°C)

–4V

0V

VGS= –10

V

–40 0 50 100 150

TC (°C)

0

0.05

0.10

0.15

0.20

0.25

0.30

0.35

RD

S (

ON

) (Ω

) VGS = –4V

–10V

(ID=–3A)

–0.050.1

–0.1 –1

1

ID (A)

Re

(yf

s) (

S)

50

10

–10

(VDS=–10V)

Ta = –40°C

125°C

25°C

0 –10 –20 –30 –40 –5010

100

1000

5000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

–0.1 –1 –10 –100–0.1

–1

–20

–10

ID (

A)

VDS (V)

1ms10m

s

RDS (ON) L

IMIT

ED

100µs


25

40

35

30

15

20

10

5

00 50 100 150

Ta (°C)

PT

(W

) With Infinite Heatsink

Without Heatsink


106

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2


(Ta=25°C)

Symbol Unit

VDSS 150 V

VGSS +20, –10 V

ID ±5 ±7 A

ID (pulse)*1 ±10 ±15 A






Tch 150 °C

Tstg –40 to +150 °C* : PW≤100µs, duty≤50%




N-channel

General purpose

PT

RatingsFET 1 FET 2

Pins 4, 5, 6 : NC

2

3

FET1 FET2 FET2 FET2 FET2

1

7

8

9

10

11

12

13

14

15




VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

00 2 4 6 8 10

VGS=2.2V

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

7

6

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

RD

S (

ON

) (m

Ω)

200

150

100

50

00 1 2 3 4 5 6 7

ID (A)

VGS=10V

4V

TC (°C)

RD

S (

ON

) (m

Ω)

4V

VGS=10V

500

400

200

100

300

0–40 0 50 100 150

(ID=3.5A)

VDS (V)

ID (

A)

10V4V

2.8V

2.6V

2.4V

5

4

3

2

1

0 0 2 4 6 8 10

VGS=2.2V

VGS (V)

ID (

A)

Tc=1

25°C

25°C

5

4

3

2

1

00 1 2 3 4

(VDS=10V)

–40°

C

ID (A)

RD

S (

ON

) (m

Ω)

4V400

500

300

200

100

00 1 2 3 4 5

VGS=10V

TC (°C)

RD

S (

ON

) (Ω

)

4V

VGS=10V

1.0

0.5

0–40 0 50 100 150

(ID=2.5A)

107

FET 1 FET 2 FET 1

FET 1 FET 2 FET 2

FET 1 FET 2



RDS(ON)

(Ta=25°C)

FET 1 FET 2





IGSS 100 nA VGS=20V 100 nA VGS=20V



Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A






td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,


td (off) 55 ns RL=28Ω, 80 ns RL=20Ω,







ID (A)

Re

(yf

s) (

S) TC=–40°C

20

10

5

1

0.5

0.30.05 0.1 0.5 1 5 7

125°C

25°C

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

5000

500

1000

4050

100

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR

(A

)

10V

4V

VGS=0V

5

4

7

6

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

1

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on)

LIMIT

ED

(TC=25°C)

1-Circuit Operation

10

20

30

40

50

00 50 100 150

Ta (°C)

PT

(W

)


Without Heatsink


ID (A)

Re

(yf

s) (

S) TC=–40°C

25°C

125°C

10

5

1

0.5

0.30.05 0.1 0.5 1 5

(VDS=10V)

Cap

acita

nce

(pF

)

Coss

Crss

1000

100

500

10

50

0 10 20 30 40 50

VDS (V)

Ciss

VGS=0Vf=1MHz

VSD (V)

IDR

(A

)

10V

4VVGS=0V

5

4

3

2

1

00 0.5 1.0 1.5

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

20

10

5

0.5

0.1

0.05

0.010.5 1 5 10 50 200100

ID (pulse) MAX

RDS (on) LIMITED

(TC=25°C)

1-Circuit Operation

108

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6012

2

R2 R3

4

R1

8

6

9

11

10

1

3 7

5 12 R1: 3kΩ typ R2: 2kΩ typ R3: 150Ω typ

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A

IB 0.5 –0.5 A

PT5 (Ta=25°C)

W25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j–c 5 °C/W

RatingsNPN PNP

6

4

2

00 2 4 6

IB=4

.0m

A

1.0mA

0.6mA

0.4mA

0.3mA

2.0mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 6

typ

0.05

(VCE=4V)

hFE

IC (A)

0.03 0.1 0.5 1 5 60.05

20000

10000

5000

1000

500

100

50

30

75°C

25°CTa=125°C

–30°C

(VCE=4V)

hFE

IC (A)

6

4

2

00 1 2 3

Ta=1

25°C

75°C

25°C

–30°

C

5

3

1

(VCE=4V)IC

(A

)

VBE (V)

–6

–4

–2

00 –2 –4 –6

IB=–

2.2m

A –1.8mA

–1.5mA

–1.2mA

–1.0mA

–0.9mA

–0.8mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –6

typ

–0.05

(VCE=–4V)

hFE

IC (A)

–0.03 –0.1 –0.5 –1 –5 –6–0.05

20000

10000

5000

1000

500

100

50

30

Ta=125°C

–30°C

75°C

25°C

(VCE=–4V)

hFE

IC (A)

–6

–4

–2

–3

00 –1 –2 –3

75°C

25°C

–30°

C

–5

–1

Ta=

125°

C

(VCE=–4V)

IC (

A)

VBE (V)





109

NPN PNP

NPN PNP

NPN PNP





SLA6012(Ta=25°C)

NPN PNP





IEBO 10 µA VEB=6V –10 mA VEB=–6V




3

0.1 0.5

2

1

01 5 10 50 100

IC=4A

IC=2A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

3

0.5

2

1

01 5 6

Ta=

125°

C

75°C25

°C–3

0°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

10

5

5

1

0.5

0.1

0.05

0.0310050103


10ms

1ms

IC (

A)

VCE (V)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

–3

–0.3 –0.5

–2

–1

0–1 –5 –10 –50 –100

IC=–2A

IC=–1A

IC=–4A

VC

E (

sat)

(V

)

IB (mA)

–3

–0.5

–2

–1

0–1 –5 –6

125°C

Ta=–30°C

25°C

75°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3


10ms

1ms

IC (

A)

VCE (V)

20

10

5

1

0.551 10 100 100050050

PW (mS)

θj–a

(°C

/ W

)


110

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6020


R3 R4

2 8 9

1

3

4

R1

7

6

10

11

5 12

R2

(Ta=25°C)

Symbol Unit

VCBO 100 –100 V

VCEO 100 –100 V

VEBO 6 –6 V

IC 5 –5 A


IB 0.5 –0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j–c 5 °C/W

PT W

RatingsNPN PNP

20000

10000

5000

1000

500

100

50

300.03 0.1 0.5 1 5 8

typ

0.05IC (A)

hFE

(VCE=4V)

20000

10000

5000

1000

500

100

50

300.02 0.1 0.5 1 5 80.05

75°C

25°CTa=12

5°C

–30°C

(VCE=4V)

hFE

IC (A)

4

2

00 1 2 3

5

3

1

Ta=1

25°C

75°C

25°C

–30°

C

(VCE=2V)IC

(A

)

VBE (V)

–8

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

IB=–4mA

IC (

A)

VCE (V)

(VCE=–4V)20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5

hFE

IC (A)–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30–0.03 –0.1 –0.5 –1 –5 –8

Ta=125°C

–30°C

–0.05

75°C25°C

(VCE=–4V)

hFE

IC (A)

–8

–6

–4

–2

00 –1 –2 –3

Ta=

125°

C

–30°

C75°C

25°C

(VCE=–4V)

IC (

A)

VBE (V)

5

4

3

2

1

00 1 2 3 4 5

IB=2mA

1mA 0.8mA 0.7mA 0.6mA

0.5mA

0.4mA

IC (

A)

VCE (V)


3-phase motor drive




111

NPN PNP

NPN PNP

NPN PNP





SLA6020(Ta=25°C)

NPN PNP









3

0.2 0.5

2

1

01 5 10 50

IC=1A

IC=3A

IC=5A

VC

E (

sat)

(V

)

IB (mA)

0.5

2

1

01 5

125°C75°C25°C

Ta=–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

10

5

5

1

0.5

0.1

0.05

0.0310050103

10ms

1ms

100µs

IC (

A)

VCE (V)


20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

–3

–0.2 –0.5

VC

E (

sat)

(V

)

IB (mA)

–2

–1

0–1 –5 –10 –50 –100 –500

IC=–1A

IC=–3A

IC=–5A

–3

–0.3 –0.5

–2

–1

0–1 –5 –8

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3


10ms

1ms

100µs

IC (

A)

VCE (V)


112

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6022

2

R2 R3

4

R1

8

6

9

11

10

1

3 7

5 12

R1: 2.5kΩ typ R2: 2.5kΩ typ R3: 200Ω typ

(Ta=25°C)

Symbol Unit

VCBO 100 –100 V

VCEO 80 –100 V

VEBO 6 –6 V

IC 5 –5 A

IB 0.5 –0.5 A

PT5 (Ta=25°C)

W25 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j–c 5 °C/W

RatingsNPN PNP

8

7

6

5

4

3

2

1

00 1 2 3 4 5

IB=2

0mA

1mA

0.6mA

0.4mA

2mA6mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

100

500.03 0.1 0.5 1 5 8

typ

0.05

(VCE=4V)

hFE

IC (A)

20000

10000

5000

1000

500

100

500.03 0.1 0.5 1 5 8

75°C

25°CTa=125°C

-30°C

(VCE=4V)

hFE

IC (A)

IC (

A)

VBE (V)

(VCE=4V)8

6

4

2

00 1 2 3

Ta=1

25°C

75°C

25°C

–30°

C

–8

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5

IB=–4

mA –2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

100

50–0.03 –0.1 –0.5 –1 –5 –8

typ

–0.05

(VCE=–4V)

hFE

IC (A)

20000

10000

5000

1000

500

100

50–0.03 –0.1 –0.5 –1 –5 –8

75°C

–30°C25°CTa=

125°C

(VCE=–4V)

hFE

IC (A)

–8

–6

–4

–2

00 –1 –2 –3

75°C

25°C

–30°

C

Ta=1

25°C

(VCE=–4V)

IC (

A)

VBE (V)





113

NPN PNP

NPN PNP

NPN PNP





SLA6022(Ta=25°C)

NPN PNP









VFEC V 1.3 V IFEC=1A

trr µs 2.0 µs IFEC=±100mA

3

0.2 0.5

2

1

01 5 10 50 100

IC=5AIC=3A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

3

0.3 0.5

2

1

01 5 8

75°C

25°C

Ta=

125°

C

–30°

C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

10

5

5

1

0.5

0.1

0.05

0.0310050103

10ms

1ms


IC (

A)

VCE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–a

(°C

/ W

)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

–3

–0.2 –0.5

–2

–1

0–1 –5 –10 –50 –100

IC=–1A

IC=–3A

IC=–5A

VC

E (

sat)

(V

)

IB (mA)

–3

–0.3 –0.5

–2

–1

0–1 –5 –8

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03–100–50–10–3

10ms

1ms

IC (

A)

VCE (V)



114

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6023

2

R2 R3

4

R1

8

6

9

11

10

1

3 7

5 12

R1: 2kΩ typ R2: 3kΩ typ R3: 80Ω typ

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 6 –6 A


IB 0.5 –0.5 A

PT5 (Ta=25°C)

W25 (Tc=25°C)



RatingsNPN PNP

6

4

2

00 2 4 6

1mA

8

10

12

0.5mA

2mA

5mA30

mA10mA

IB=1

00m

A

IC (A

)

VCE (V)

20000

10000

5000

1000

500

0.1 0.5 1 5 10200

12

typ

(VCE=4V)

hFE

IC (A)

20000

10000

5000

1000

500

0.1 0.5 1 5 10200

12

75°C

25°C

–30°C

Ta=125°C

(VCE=4V)

hFE

IC (A)

2

00 1 2 3

75°C

25°C

–30°

C

4

6

8

10

12

Ta=1

25°C

(VCE=4V)IC

(A

)

VBE (V)

–6

–4

–2

00 –2 –4 –6

–1mA

–8

–10

–12

–0.5mA

–2mA

–3mAIB=–10mA –5mA

IC (

A)

VCE (V)

20000

10000

5000

1000

500

–0.1 –0.5 –1 –5 –10200

–12

typ

(VCE=–4V)

hFE

IC (A)

20000

10000

5000

1000

500

–0.1 –0.5 –1 –5 –10200

–12

Ta=125°C

75°C

25°C

–30°C

(VCE=–4V)

hFE

IC (A)

–2

00 –1 –2 –3

75°C

25°C

–4

–6

–8

–10

–12

–30°

C

Ta=1

25°C

(VCE=–4V)

IC (

A)

VBE (V)





115

NPN PNP

NPN PNP

NPN PNP





SLA6023

IC=5A, IB=10mA IC=–5A, IB=–10mA

(Ta=25°C)

NPN PNP







hFE 2000 5000 12000 VCE=4V, IC=5A 2000 5000 12000 VCE=–4V, IC=–5A

VCE(sat) 1.5 V –1.5 V

VBE(sat) 2.0 V –2.0 V

VFEC V 2.0 V IFEC=5A

trr µs 1.0 µs IFEC=±0.5A

ton 0.8 µs VCC 25V, 1.0 µs VCC –25V,

tstg 6.0 µs IC=5A, 1.4 µs IC=–5A,

tf 2.0 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA

fT 80 MHz VCE=12V, IE=–1A 120 MHz VCE=–12V, IE=1A

Cob 100 pF VCB=10V, f=1MHz 150 pF VCB=–10V, f=1MHz

3

0.2 0.5

2

1

1 5 10 50 100 200

IC=4AIC=2A

IC=8A

0.6

VC

E (

sat)

(V

)

IB (mA)

3

0.1 0.5

2

1

01 5 10 20

Ta=125°C

75°C25°C

–30°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

–3

–0.2 –0.5

–2

–1

–1 –5 –10 –50 –100 –200

IC=–8A

IC=–4A

IC=–2A

0.6

VC

E (

sat)

(V

)

IB (mA)

–0.1 –0.5

–2

–3

–1

0–1 –5 –10 –20

Ta=–30°C25°C

75°C

125°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–10

–5

–5

–1

–0.5

–0.1–100–50–10–3

–20

10ms

1ms

100µs


IC (

A)

VCE (V)


10

5

5

1

0.5

0.110050103

20


10ms

1ms

100µs

IC (

A)

VCE (V)

116

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6024(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 8 –8 A


IFEC — –8 A

IFECP — –12 A

IB 0.5 –0.5 A

5 (Ta=25°C)

25 (Tc=25°C)


Tj 150 °CTstg –40 to +150 °Cθ j–c 5 °C/W

PT W

RatingsNPN PNP

8

7

6

5

4

3

2

1

0 2 3 4 5 61

IC (

A)

VCE (V)

IB=5mA

1.0mA

0.7mA

0.5mA

10000

1000

100

100.01 0.1 1 10 12

hFE

IC (A)

(VCE=4V)

typ

10000

1000

100

100.01 0.1 1 1012

hFE

IC (A)

–20°

C75

°C

25°CTa=

125°C

(VCE=4V)

8

7

6

5

4

3

2

1

00 0.5 1 1.5 2 2.5 3

VBE (V)

IC (

A)

Ta=

–20°

C

(VCE=4V)

25°C

75°C

125°

C

–8

–7

–6

–5

–4

–3

–2

–1

0–10 –2 –3 –4 –5 –6

VCE (V)

IC (

A)

IB=–5mA

IB=–2mA

IB=–1mA

IB=–0.6mA

10000

1000

100

10–0.01 –0.1 –1 –10 –12

typ

hFE

IC (A)

(VCE=–4V)

10000

1000

100

10–0.01 –0.1 –1 –10–12

(VCE=–4V)

hFE

IC (A)

–20°CTa=

125°C

75°C

25°C

–8

–7

–6

–5

–4

–3

–2

–1

00 –0.5 –1 –1.5 –2 –2.5 –3

VBE (V)

IC (

A)

Ta=

–20°

C

(VCE=–4V)

25°C

75°C

125°

C


3-phase motor drive

2

R1 R2

4

R3

8

6

9

11

10

1

3 7

5 12

R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ




117

NPN PNP

NPN PNP

NPN PNP

VCE(sat)-IB Temperature Characteristics (Typical) θ j-a-PW Characteristics




SLA6024(Ta=25°C)

NPN PNP








VCE(sat) 1.5 V –1.5 V

VBE(sat) 2.0 V –2.0 V

VFEC — V 2.0 V IFEC=5A

trr — µs 1.0 µs IFEC=±0.5A







3

2.5

2

1.5

1

0.5

00.5 1 10 100

Ta=25°CTa=–20°C

Ta=125°CTa=75°C

(IC=5A)

VC

E (

sat)

(V

)

IB (mA)

1.5

2

1

0.5

00.01 0.1 1 10 12

(IB=10mA)

IC (A)

VC

E (

sat)

(V

)

Ta=25°C Ta=–20°C

Ta=75°C

Ta=125°C

20

10

1

0.1

0.011 5 10 50 100

VCE (V)

IC (

A)


10mS

1mS

100µs20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

25

20

15

10

5

0


–40 0 50 100 150

Ta (°C)

PT (

W)

With Infinite H

eatsink

Without Heatsink

100×100×2

50×50×2

(IC=–5A)–3

–2.5

–2

–1.5

–1

–0.5

0–0.5 –1 –10 –100

VC

E (

sat)

(V

)

IB (mA)

Ta=–20°C

Ta=25°C

Ta=75°C

Ta=125°C

–2

–1.5

–1

–0.5

0–0.01 –0.1 –1 –10 –12

Ta=25°CTa=–20°C

Ta=75°C

Ta=125°C

VC

E (

sat)

(V

)

IC (A)

(IB=–10mA)

–20

–10

–1

–0.1

–0.01–1 –5 –10 –100–50

VCE (V)

IC (

A)


10mS

1mS

100µs


118

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA6026(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 10 –10 A


IFEC — –10 A

IFECP — –15 A

IB 0.5 –0.5 A

5 (Ta=25°C)

35 (Tc=25°C)


Tj 150 °CTstg –40 to +150 °Cθ j–c 3.57 °C/W

PT W

RatingsNPN PNP

10

8

9

7

5

3

1

0

6

4

2

10 2 3 4 5 6

IB=

2mA

1mA

0.8mA

0.6mA

0.4mA

VCE (V)

IC (

A)

20000

10000

5000

1000

500

1000.1 1 10 15

hFE

IC (A)

(VCE=4V)

typ

20000

10000

1000

100

(VCE=4V)

0.1 1 10 15

hFE

IC (A)

Ta=125°C

75°C

25°C

–30°C

15

10

5

00 1 2 3

IC (

A)

VBE (V)

(VCE=2V)

Ta=

125°

C75

°C25

°C–3

0°C

–10

–9

–8

–7

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

–3mA

–2mA

–1mA

–0.6mA

IC (

A)

VCE (V)

IB=

–5m

A

20000

10000

5000

1000

500

100–0.1 –1 –10 –15

IC (A)

hFE

(VCE=–4V)

typ

20000

10000

1000

100

hFE

–0.1 –1 –10 –15

IC (A)

(VCE=–4V)

IB=125°C

75°C

25°C

–30°C

(VCE=–2V)–15

–10

–5

00 –1 –2 –3

VBE (V)

IC (

A)

Ta=

125°

C75

°C25

°C–3

0°C

2

R1 R2

4

R3

8

6

9

11

10

1

3 7

5 12






119

NPN PNP

NPN PNP

NPN PNP

VCE(sat)-IB Temperature Characteristics (Typical) θ j-a-PW Characteristics




SLA6026(Ta=25°C)

NPN PNP








VCE(sat) 1.5 V –1.5 V

VBE(sat) 2.0 V –2.0 V

VFEC – V 2.0 V IFEC=–6A

trr – µs 4.0 µs IFEC=±0.5A







3

2

2.5

1

1.5

0

0.5

0.3 1 10 100 500

(IC=5A)

VC

E (

sat)

(V

)

IB (mA)

IB=125°C

–30°C

75°C

25°C

3

2

1

00.01 0.1 1 10 15

VC

E (

sat)

(V

)

IC (A)

(IB=10mA)

–30°C

25°C 75°C

Ta=125°C

20

10

1

0.11 5 10 50 100

100µS

1ms

VCE (V)

IC (

A)


20

10

1

0.31 10 100 1000 2000

θj–a

(°C

/ W

)

PW (mS)

40

30

20

10

0–40 0 50 100 150

Ta (°C)

PT (

W)



Without Heatsink

100×100×2

50×50×2

–3

–2

–2.5

–1

–1.5

0

–0.5

–0.3 –1 –10 –100 –500

VC

E (

sat)

(V

)

IB (mA)

(IC=–5A)

Ta=125°C

25°C

75°C

–30°C

–3

–2

–1

0

VC

E (

sat)

(V

)

IC (A)–0.01 –0.1 –1 –10 –15

(IB=–10mA)

Ta=125°C 75°C

25°C

–30°C

–20

–10

–1

–0.1–1 –5 –10 –50 –100

100µS

1ms

VCE (V)

IC (

A)



120

NPN PNP NPN

NPN PNP PNP

NPN PNP





SLA8001


5R2

2

36

4 8

710

9

12

111

R1

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 12 –12 A

IB 3 –3 A

PT5 (Ta=25°C)

W40 (Tc=25°C)


Tj 150 °C

Tstg –40 to +150 °C

θ j–c 3.12 °C/W

RatingsNPN PNP

12

10

8

6

4

2

00 1 2 3 4 5 6

VCE (V)

IC (

A)

IB=2

00m

A

150m

A 100mA

60mA

40mA

20mA

10mA

500

100

50

10

5

0.02 0.1 5 102

120.05 0.5 1

typ

(VCE=1V)

hFE

IC (A)

500

100

50

10

5

0.02 0.1 5 102

120.05 0.5 1

75°C

25°C

–30°C

Ta=125°C

(VCE=1V)

hFE

IC (A)

2

00 0.5 1.0 1.5

4

6

8

10

12

Ta=1

25°C

75°C

25°C

–30°

C

(VCE=1V)IC

(A

)

VBE (V)

–12

–10

–8

–6

–4

–2

00 –1 –2 –3 –4 –5 –6

VCE (V)

IC (

A)

IB=–

200m

A –150mA

–100mA

–60mA

–40mA

–20mA

–10mA

500

100

50

10

5

–0.02 –0.1 –5 –102

–12–0.05 –0.5 –1

typ

(VCE=–1V)

hFE

IC (A)

500

100

50

10

5

–0.02 –0.1 –5 –102

–12–0.05 –0.5 –1

Ta=125°C

75°C

25°C

–30°C

(VCE=–1V)

hFE

IC (A)

–2

00 –0.5 –1.0 –1.5

–4

–6

–8

–10

–12

Ta=

125°

C75

°C25

°C–3

0°C

(VCE=–1V)

IC (

A)

VBE (V)

PNP + NPN

H-bridge External dimensions A • • • SLA (12-pin)



121

NPN PNP

NPN PNP

NPN PNP





SLA8001(Ta=25°C)

NPN PNP









VFEC 2.5 V IFEC=10A 2.5 V IFEC=10A

1.5

5

1.0

0.5

010 50 100 500 1000 5000

3A6A

9A

IC=12A

1A

VC

E (

sat)

(V

)

IB (mA)

(IC / IB=20)1.0

0.5

00.02 0.05 0.1 0.5 1 5 1012

VC

E (

sat)

(V

)

IC (A)

Ta=125°C

75°C

25°C

–30°C

10

5

5

1

0.5

0.2 10050103

1ms

30


10ms

IC (

A)

VCE (V)

10

5

1

0.5

0.31 105 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

40

30

20

10

00–40 50 100 150

PT (

W)

Ta (°C)

With Silicone GreaseNatural CoolingHeatsink: Aluminumin mmW

ith Infinite Heatsink

Without Heatsink

100×100×250×50×2mm

–1.5

–5

–1.0

–0.5

0–10 –50 –100 –500 –1000

IC=–12A

–1A

–5000

–3A

–6A

–9A

VC

E (

sat)

(V

)

IB (mA)

–1.0

–0.5

0–0.02 –0.05 –0.1 –1 –5 –10–12–0.5

IC (A)

VC

E (

sat)

(V

)

(IC / IB=20)

Ta=125°C

75°C

25°C

–30°C

–10

–5

–5

–1

–0.5

–0.2–100–50–10–3

1ms

–30


10ms

IC (

A)

VCE (V)


122





(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –4 A

IB –1 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)





hFE 2000 VCE=–4V, IC=–3A

VCE(sat) –1.5 V IC=–3A, IB=–6mA

PT W

SMA4020Specification

min typ max


R1 R2

10

12

7

8

6

5

3

1

11942

–6

–4

–2

00 –1 –2 –3 –4 –5 –6

–0.8mA

–1.0mA

–1.2mA

–1.5mA–1.8mA

IB=–

2.2m

A

IC (

A)

VCE (V)

–0.9mA

10000

5000

1000

500

100

–0.0350

–0.1 –0.5 –1 –5 –6

typ

(VCE=–4V)

hFE

IC (A)

10000

5000

1000

500

100

–0.0350

–0.1 –0.5 –1 –5 –6

–30°CTa=

125°C

75°C

25°C

(VCE=–4V)hF

E

IC (A)

–3

–1

0–0.5 –1 –5 –6

–2

Ta=–30°C

25°C

125°C

75°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)–0.2

–3

–2

–1

0–0.5 –1 –5 –10 –50 –100

IC=–4A

IC=–2A

IC=–1A

VC

E (

sat)

(V

)

IB (mA)0 –1 –2 –3

–6

–5

–4

–3

–2

–1

0

–30°

C

Ta=

125°

C

75°C25°C

(VCE=–4V)

IC (

A)

VBE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

–10

–5

–1

–0.5

–0.1

–0.05

–0.03–3 –5 –10 –50 –100


10ms

1ms

IC (

A)

VCE (V)

PNP Darlington

General purpose External dimensions B • • • SMA



123





SMA4021(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –3 A


IB –0.5 A

IF –6 (PW≤0.5ms, Du≤25%) A

IFSM –8 (PW≤10ms, Single pulse) A

VR 100 V

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °CTstg –40 to +150 °C

(Ta=25°C)





hFE 2000 5000 12000 VCE=–4V, IC=–2A

VCE(sat) –1.5 V

VBE(sat) –2.0 V

PT W

IC=–2A, IB=–4mA

(Ta=25°C)


VR 100 V IR=10µA

VF 1.2 V IF=1A

IR 10 µA VR=100V





2 3 4

R1 R2

5

6

1

9 10 11

12

7

8

–6

–4

–2

00 –1 –2 –3 –4 –5 –6

–0.8mA

–1.0mA

–1.2mA

–1.5mA–1.8mA

IB=–

2.2m

A

IC (

A)

VCE (V)

–0.9mA

–0.03

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

typ

(VCE=–4V)

hFE

IC (A)–0.03

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

Ta=12

5˚C

–30˚

C

75˚C

25˚C

(VCE=–4V)hF

E

IC (A)

–3

–1

0–0.5 –1 –5 –6

–2

Ta=–30°C

25°C

125°C

75°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

IC=–4A

–3

–0.2 –0.5 –1 –5 –10 –50

–2

–1

0–100

IC=–2A

IC=–1A

VC

E (

sat)

(V

)

IB (mA)

–6

–4

–2

00 –1 –2 –3

–1

–3

–5

–30°

C

Ta=

125°

C

75°C

25°C

(VCE=–4V)

IC (

A)

VBE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

–10

–0.1

–0.03

–5

–1

–0.5

–0.05

–5–3 –10 –50 –100

10ms

1ms

100µs


10µs

IC (

A)

VCE (V)

PNP Darlington

With built-in flywheel diode External dimensions B • • • SMA




124





(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 3 A


IB 0.2 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 100 V IC=25mA

hFE 2000 6000 15000 VCE=4V, IC=1.5A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.7 2.0 V

ton 0.5 µs VCC 30V

tstg 2.2 µs IC=1.5A


fT 40 MHz VCE=12V, IE=–0.5A

Cob 30 pF VCB=10V, f=1MHz

PT W

SMA4030Specification

min typ max

IC=1.5A, IB=3mA


1

2

R1 R2

3

5

4

6

9

7

11

10

8 12

00

5

4

3

1 2 3

2

1

4 5 6

1mA

2mA

0.6mA

0.4mA

0.3mA

IB=1

0mA

IC (

A)

VCE (V)

20000

0.03

10000

5000

1000

500

100

500.05 0.1 0.5 1 5

typ

(VCE=4V)

hFE

IC (A)

20000

0.03

10000

5000

1000

500

100

500.05 0.1 0.5 1 5

–30°CTa=

125°C

75°C

25°C

(VCE=4V)hF

E

IC (A)

0.50

1

2

3

1 5

25°C

75°C

Ta=–30°C

125°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)0.10

1

2

3

0.5 1 5 10 50

IC=3A

IC=1.5A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

00

5

4

3

1

2

1

2 3

–30°

CTa=1

25°C

75°C

25°C

(VCE=4V)

IC (

A)

VBE (V)

20

10

1

5

0.50 5 10 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

10

0.1

0.03

5

1

0.5

0.05

53 10 50 100

100µs

1ms10m

s

IC (

A)

VCE (V)


NPN Darlington

General purpose External dimensions B • • • SMA




125





SMA4032(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 3 A


IB 0.2 A

IF 3 (PW≤0.5ms, Du≤25%) A

IFSM 5 (PW≤10ms, Single pulse) A

VR 120 V

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °CTstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 100 V IC=25mA

hFE 2000 6000 15000 VCE=4V, IC=1.5A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.7 2.0 V


tstg 2.2 µs IC=1.5A,



Cob 30 pF VCB=10V, f=1MHzPT W

IC=1.5A, IB=3mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.6 V IF=1A

IR 10 µA VR=120V





1

2 3 4

6

5

R1 R2

8

9 10 11

7

12

00

5

4

3

1 2 3

2

1

4 5 6

1mA2m

A

0.6mA

0.4mA

0.3mA

IB=1

0mA

IC (

A)

VCE (V)

20000

0.03

10000

5000

1000

500

100

500.05 0.1 0.5 1 5

typ

(VCE=4V)

hFE

IC (A)

20000

0.03

10000

5000

1000

500

100

500.05 0.1 0.5 1 5

–30°C

Ta=125°C

75°C

25°C

(VCE=4V)hF

E

IC (A)

0.50

1

2

3

1 5

25°C

75°C

Ta=–30°C

125°C

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)0.10

1

2

3

0.5 1 5 10 50

IC=3A

IC=1.5A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

00

5

4

3

1

2

1

2 3

–30°

C

Ta=1

25°C

75°C

25°C

(VCE=4V)

IC (

A)

VBE (V)

20

10

1

5

0.50 5 10 50 100 500 1000

PW (mS)

θj–

a (

°C /

W)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

10

0.1

0.03

5

1

0.5

0.05

53 10 50 100

100µs

1ms

10ms

IC (

A)

VCE (V)


NPN Darlington





External dimensions B • • • SMA


126

Characteristic curvesIC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)



SMA4033(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 2 A


IB 0.2 A

IF 2 (PW≤0.5ms, Du≤25%) A


VR 120 V

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °CTstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 100 V IC=25mA

hFE 2000 6000 15000 VCE=4V, IC=1A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.7 2.0 V

PT W

IC=1A, IB=2mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.8 V IF=1A

IR 10 µA VR=120V





1

2 3 4

6

5

R1 R2

8

9 10 11

7

12

4

2

00 1

IC (

A)

VCE (V)2

3

1.2mA

0.6mA

0.4mA

0.3mA

IB=4mA

1

3 4 5 6

3mA

2mA

200.02 0.05

hFE

IC (A)0.1 0.5 1 4

(VCE=4V)10000

5000

1000

500

100

50

typ

200.02 0.05

hFE

IC (A)0.1 0.5 1 4

(VCE=4V)10000

5000

1000

500

100

50

75°C

25°C

–30°CTa=

125°C

–30°

CTa=

125°

C

(IC / IB=1000)

VC

E (

sat)

(V

)

0

1

2

3

0.2IC (A)

0.5 1 4

25°C

75°C

0.1

IB (mA)510.5

0

2

1

3

VC

E (

sat)

(V

)

(IC=1A)

Ta=125°C

–30°

C

25°C

75°C

4

2

00

(VCE=4V)

IC (

A)

VBE (V)1

3

1

2 3

75°C25°C

–30°

C

Ta=1

25°C

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

PW (mS)0.5 100 1000500501051

5

1

0.5

10

20

θj–

a (

°C /

W)

0.2

5

1

0.5

0.1

0.05

IC (

A)

VCE (V)3

100µs1ms10ms


5 10 50 100

NPN Darlington





127





(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±4 A


EAS* 16 mJ



θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W


Tch 150 °CTstg –40 to +150 °C


SMA5101(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A


Coss 82 pF VGS=0V





PT


1

2

3

5

4

6

8

9

7

12

11

10

0 20

8

7

3

0

6V

7V

VDS (V)

ID (

A)

10

6

5

4

2

1

10V

VGS=5V

(VDS=10V)

25°C

125°C

0 2 4 6 10

ID (

A)

VGS (V)

TC=–40°C

8

8

7

3

0

6

5

4

2

1

(VGS=10V)

00

1 2 8

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

3 4 5 6 7

0.20.05 0.5 1

1

5(VDS=10V)

25°C

125°C

ID (A)

Re

(yf

s) (

S)

5 8

0.5

TC=–40°C

0.1 –400

0 50 100 150

0.2

0.8

1.0

1.2VGS=10VID=4A

RD

S (

ON

) (Ω

)

TC (°C)

0.6

0.4

0 10 20 30 40 50

10

50

100

600

VGS=0f=1MHz

Ciss

Coss

Crss

VDS (V)

Cap

acita

nce

(pF

)

5

00 1.0 1.5

2

7

8

VGS=0V5V

IDR (

A)

VSD (V)

0.5

10V

1

3

4

6

5

0.50.1

1 5 10 50 100

1

5

10(TC=25°C)

ID (pulse) max

1ms

100µs

10ms (1shot)

RDS (O

N)

ID (

A)

VDS (V)

LIM

ITED

0.5

N-channel

General purpose

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink




128





SMA5102(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.50 0.60 Ω VGS=10V, ID=4A


Coss 82 pF VGS=0V





(Ta=25°C)

Symbol Ratings Uni

VDSS 100 V

VGSS ±20 V

ID ±4 A


EAS* 16 mJ

IF 4 (PW≤0.5ms, Du≤25%) A


VR 120 V





Tch 150 °CTstg –40 to +150 °C


PT



VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V



1

2

5

4

6

3

8

9

12

1110

7

0 20

8

7

3

0

6V

7V

VDS (V)

ID (

A)

10

6

5

4

2

1

10V

VGS=5V

25°C

125°C

0 2 4 6 10

ID (

A)

VGS (V)

TC=–40°C

8

8

7

3

0

6

5

4

2

1

(VDS=10V)

00

1 2 8

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

3 4 5 6 7

(VDS=10V)

0.20.05 0.5 1

1

5(VDS=10V)

25°C

125°C

ID (A)

Re

(yf

s) (

S)

5 8

0.5

TC=–40°C

0.1 –400

0 50 100 150

0.2

0.8

1.0

1.2V =10VGS

ID=4A

RD

S (

ON

) (Ω

)

TC (°C)

0.6

0.4

0 10 20 30 40 50

10

50

100

600

VDS (V)

Cap

acita

nce

(pF

)

5

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

7

8

IDR (

A)

VSD (V)

0.5

1

3

4

6

5

5V

10VVGS=0V

0.50.1

1 5 10 50 100

1

5

10

ID (

A)

VDS (V)

0.5

(TC=25°C)

1ms10m

s (1shot)

LIM

ITED

100µs

ID (pulse) max

RDS (O

N)

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel




130

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5103

12

10

11

1

2

3

7

94

6

8

5

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID ±5 4 A


EAS* 2 — mJ





Tch 150 °C

Tstg –40 to +150 °C


PT


0 2 10

10

8

2

0

VDS (V)

ID (

A)

4 6 8

6

4

VGS=4V

7V

6V

10V

6

0

8

10

0 2 4 8

ID (

A)

VGS (V)

4

2

6

(VDS=10V)

25°C

125°C

TC=–40°C

00

2 4 10

0.05

0.10

0.15

0.20

ID (A)

RD

S (

ON

) (Ω

)

6 8

(VGS=10V)

–400

0 50 100 150

0.1

0.2

0.3

RD

S (

ON

) (Ω

)

TC (°C)

ID=5AVGS=10V

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

VGS=–4V

–7V

–6V

–5V

–10V

ID (

A)

VGS (V)

0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

(VGS=–10V)

0.3

0.1

–400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V


H-bridge External dimensions B • • • SMA



131

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5103(Ta=25°C)

N channel P channel
















0.30.08 0.5 1

1

5

10

ID (A)

Re(

yfs)

(S

)

5 10

0.5

(VDS=10V)

25°C

125°C

TC=–40°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

8

10

IDR (

A)

VSD (V)

0.5

4

6

5V

10V

VGS=0V

0.50.1

1 5 10 50 100

0.5

1

5

10

20ID

(A

)

VDS (V)

(TC=25°C)

1ms10m

s (1shot)

100µs

LIM

ITED

RDS (ON)

ID (pulse) max

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°C

TC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)

–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

1ms

10ms (1shot)

100µs

LIM

ITED

RDS (O

N)

ID (pulse) max

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink


132

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5104

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID ±5 4 A


EAS* 2 — mJ





Tch 150 °C

Tstg –40 to +150 °C


PT


0 2 10

10

8

2

0

VDS (V)

ID (

A)

4 6 8

6

4

VGS=4V

7V

6V

5V

10V

6

0

8

10

0 2 4 8

ID (

A)

VGS (V)

4

2

6

(VDS=10V)

25°C

125°C

TC=–40°C

00

2 4 10

0.05

0.10

0.15

0.20

ID (A)

RD

S (

ON

) (Ω

)

6 8

(VGS=10V)

–400

0 50 100 150

0.1

0.2

0.3

RD

S (

ON

) (Ω

)

TC (°C)

ID=5AVGS=10V

0 –2 –10

–8

–6

0

VDS (V)

ID (

A)

–4 –6 –8

–2

–4

VGS=–4V

–7V

–6V

–5V

–10V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(VGS=–10V)

–400

0 50 100 150

0.6

0.8

1.0

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

ID=–4AVGS=–10V


3-phase motor drive External dimensions B • • • SMA



ID (

A)

VGS (V)

0 –2 –10–4 –6 –8

–8

–6

0

–2

–4

(VDS=–10V)

25°C

125°C

TC=–40°C

133

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5104(Ta=25°C)

N channel P channel
















0.30.08 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

(VDS=10V)

25°C

125°C

TC=–40°C

0 10 20 30 40 5010

100

1000

VDS (V)

Cap

acita

nce

(pF

)

500

50

VGS=0Vf=1MHz

Ciss

Coss

Crss

00 1.0 1.5

2

8

10

IDR (

A)

VSD (V)

0.5

4

6

5V

10V

VGS=0V

0.50.1

1 5 10 50 100

0.5

1

5

10

20ID

(A

)

VDS (V)

(TC=25°C)

1ms10m

s (1shot)

100µs

LIM

ITED

RDS (ON)

ID (pulse) max

0.3–0.5 –1

1

5

ID (A)

Re

(yf

s) (

S)

–5 –8

0.5

–0.1

(VDS=–10V)

25°C

125°C

TC=–40°C

0 –10 –20 –30 –40 –50

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 –3 –5

IDR (

A)

VSD (V)

–1

–8

–6

0

–4

–2

–2 –4

–5V

–10V

VGS=0V

–0.5–0.1

–1 –5 –10 –50 –100

–1

–5

–10

ID (

A)

VDS (V)

–0.5

(TC=25°C)

1ms

10ms (1shot)

100µs

LIM

ITED

RDS (O

N)

ID (pulse) max

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink


134





SMA5105(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.27 0.30 Ω VGS=10V, ID=2.5A

0.38 0.41 Ω VGS=4V, ID=2.5A


Coss 130 pF VGS=0V





(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±10 V

ID ±5 A


EAS* 32 mJ

IF 5 (PW≤0.5ms, Du≤25%) A


VR 120 V





Tch 150 °CTstg –40 to +150 °C


PT



VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V



RDS(ON)

1

2

5

4

6

3

8

9

12

1110

7

0 2 10

8

6

0

VDS (V)

ID (

A)

4 6 8

4

2

10

VGS=2.5V

3.5V

4V

3V

10V

0 1 2 3 4

ID (

A)

VGS (V)

8

6

0

4

2

10

5

(VDS=10V)

25°C

125°C

TC=–40°C

00

1 2 3

0.1

0.2

0.3

0.4

ID (A)

RD

S (

ON

) (Ω

)

4 5 6 7 108 9

VGS=10V

VGS=4V

0.30.05 0.5 1

1

5

10

ID (A)

Re

(yf

s) (

S)

5 10

0.5

0.1

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.3

0.4

0.5

0.6

RD

S (

ON

) (Ω

)

TC (°C)

0.2

0.1

(ID=2.5A)

VGS=10V

VGS=4V

0 10 20 30 40 50

50

500

2000

VDS (V)

Cap

acita

nce

(pF

)

1000

10

100

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 1.0 1.5

IDR (

A)

VSD (V)

0.5

8

6

0

4

2

10

4V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

20

ID (

A)

VDS (V)

0.5

10

(TC=25°C)

1ms10m

s (1shot)

100µs

LIM

ITED

RDS (ON)

ID (pulse) max

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel




Diode for flyback voltage absorption (1 circuit)


135





SMA5106(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.47 0.55 Ω VGS=10V, ID=2A

0.60 0.78 Ω VGS=4V, ID=2A


Coss 60 pF VGS=0V





(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±10 V

ID ±4 A


EAS* 16 mJ

IF 4 (PW≤0.5ms, Du≤25%) A


VR 120 V





Tch 150 °CTstg –40 to +150 °C


PT



VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V



RDS(ON)

1

2

5

4

6

3

8

9

12

1110

7

0 2 10

8

7

6

0

VDS (V)

ID (

A)

4 6 8

5

4

3

2

1

VGS=3V

4V

4.5V

3.5V

10V

00

1 2 3

0.2

0.4

0.6

0.8

ID (A)

RD

S (

ON

) (Ω

)

4 5 6 7 8

VGS=10V

VGS=4V

0.30.05 0.5 1

1

5

7

ID (A)

Re

(yf

s) (

S)

5 8

0.5

0.1

(VDS=10V)

25°C

125°C

TC=–40°C

–400

0 50 100 150

0.6

0.8

1.0

1.2

RD

S (

ON

) (Ω

)

TC (°C)

0.4

0.2

(ID=2A)

VGS=10V

VGS=4V

0 10 20 30 40 505

50

100

700

VDS (V)

Cap

acita

nce

(pF

)

500

10

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 1.0 1.5

IDR (

A)

VSD (V)

0.5

8

7

6

0

5

4

3

2

1 4V

10V

VGS=0V

0.50.1

1 5 10 50 100

1

5

10

ID (

A)

VDS (V)

0.5

(TC=25°C)

1ms10m

s (1shot)

100µs

LIM

ITED

RDS (O

N)

ID (pulse) max

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel





0 2 4 6 8

ID (

A)

VGS (V)

8

7

6

0

5

4

3

2

1

(VDS=10V)

25°C

125°C

TC=–40°C

136





SMA5112(Ta=25°C)

Symbol Ratings Unit

VDSS 250 V

VGSS ±20 V

ID ±7 A


EAS* 55 mJ





Tch 150 °CTstg –40 to +150 °C


PT

(Ta=25°C)






Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A

RDS(ON) 0.4 0.5 Ω VGS=10V, ID=3.5A


Coss 280 pF VGS=0V


tr 30 ns VDD 100V,






2

3

48

7

5

69

10

12

11

1

0 2 4 6 80

3

2

1

4

5

7

6

10

VDS (V)

ID (

A)

6V

5.5V

5V

4.5V

VGS=4V

10V

0 2 4 60

3

4

5

2

1

6

7

8

VGS (V)

ID (

A)

(VDS=10V)

125°

C

TC=–

40°C

25°C

0 4321 50

0.3

0.2

0.1

0.4

0.5

6

ID (A)

RD

S (

ON

) (Ω

)

7

(VGS=10V)

0.05 0.50.10.3

1

0.5

5

10

ID (A)

Re

(yf

s) (

S)

751

(VDS=10V)

TC=–40°C

25°C

125°C

–400

1.0

0.8

0.4

0.6

0.2

TC (°C)

RD

S (

ON

) (Ω

)

150100500

ID=3.5AVGS=10V

0 2010 30

10

5

2

100

50

500

1000

2000

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

4

3

2

1

5

6

7

VSD (V)

IDR (

A)

VGS=0V

5.10V

1053 50010050

0.1

0.05

1

0.5

5

10

20

VDS (V)

ID (

A)

1ms

10ms (1shot)

100µs

RDS (ON) LIMITED

ID (pulse) max

(TC=25°C)

25

30

35

40

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel

3-phase DC motor 100V AC direct drive External dimensions B • • • SMA




137






VR 120 V IR=10µA

VF 1.0 1.2 V IF=1A

IR 10 µA VR=120V


SMA5114(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID ±3 A


EAS* 6.8 mJ

IAS 3 A





Tch 150 °CTstg –40 to +150 °C

* : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15.

PT

(Ta=25°C)



IGSS ±10 µA VGS=±20V


VTH 1.0 2.5 V VDS=10V, ID=250µA

Re(yfs) 1.0 2.3 S VDS=10V, ID=1.0A

0.20 0.25 Ω VGS=10V, ID=1.0A

0.25 0.30 Ω VGS=4V, ID=1.0A



Crss 20 pF VGS=0V

td(on) 80 ns ID=1A,

tr 170 ns VDD 30V,






RDS(ON)


1110

12851

9432

76

0 2 4 6 80

3

2

1

10

VDS (V)

ID (

A)

3.4V

3.2V

3V

VGS=2.8V

10V

0 1 20

1

2

3

3

VGS (V)

ID (

A)

4 5

(VDS=10V)

TC=–

40°C

25°C

125°

C

0 10

0.2

0.1

0.3

0.4

0.5

ID (A)

RD

S (

ON

) (Ω

)

2 3

VGS=4V

10V

0.05 0.1 0.50.2

1

0.5

5

10

1

ID (A)

Re

(yf

s) (

S)

3

(VDS=10V)

TC=–40°C

125°C

25°C

–40 00

0.2

0.1

0.3

0.4

0.5

50

TC (°C)

RD

S (

ON

) (Ω

)

100 150

(ID=1A)

VGS=4V

10V

0 2010 301

10

5

50

100

500

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

1

2

3

VSD (V)

IDR (

A)

VG

S=

0V

5V

10.5 5 5010

0.1

0.05

1

0.5

5

10

100

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

RDS (ON) LIMITED

ID (pulse) max

(TC=25°C)

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel







138





SMA5117(Ta=25°C)

Symbol Ratings Unit

VDSS 250 V

VGSS ±20 V

ID ±7 A


EAS* 120 mJ





Tch 150 °CTstg –40 to +150 °C


PT

(Ta=25°C)






Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A

RDS(ON) 0.2 0.25 Ω VGS=10V, ID=3.5A



Crss 250 pF VGS=0V


tr 25 ns VDD 100V,




trr 85 ns ISD=3.5A, VGS=0V, di/dt=100A/µs


2

3

48

7

5

69

10

12

11

1

0 2 40

3

2

1a

4

5

6

7

6

VDS (V)

ID (

A)

8 10

5.5V5V

4.5V

VGS=4V

10V

6V

0 2 40

3

2

1

4

7

6

5

6 8

VGS (V)

ID (

A)

(VDS=10V)

TC=–40°C

125°C

25°C

00

0.15

0.1

0.05

0.2

0.25

0.3

ID (A)

RD

S (

ON

) (Ω

)

5 6 741 2 3

(VGS=10V)

0.05 0.50.10.3

1

0.5

10

5

20

ID (A)

Re

(yf

s) (

S)

1 75

(VDS=10V)

125°C25°C

Tc=–40°C

–40 00

0.2

0.1

0.3

0.4

0.5

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=3.5AVGS=10V

0 2010 3010

100

50

500

1000

3000

40 50

VDS (V)

Cap

acita

nce

(pF

)

Ciss

Coss

Crss

VGS=0Vf=1MHz

0 0.5 1.0 1.50

3

1

2

4

5

6

7

VSD (V)

IDR (

A)

(VGS=0V)

10.5 105 10050

0.1

0.05

0.01

1

0.5

5

10

30

500

VDS (V)

ID (

A)

10ms (1shot)

1ms

100µs

RDS (ON) LIMITED

ID (pulse) max

(TC=25°C)

25

30

35

40

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W) W


Without Heatsink

N-channel





139





SMA5118(Ta=25°C)

Symbol Ratings Unit

VDSS 500 V

VGSS ±30 V

ID ±5 A


EAS* 45 mJ





Tch 150 °CTstg –40 to +150 °C


PT

(Ta=25°C)






Re(yfs) 2.4 4.0 S VDS=10V, ID=2.5A

RDS(ON) 1.05 1.4 Ω VGS=10V, ID=2.5A


Coss 290 pF f=1.0MHz, VGS=0V


tr 25 ns VDD 200V,




trr 75 ns ISD=2.5A, di/dt=100A/µs


N-channel





2

3

48

7

5

69

10

12

11

1

0 5 10 15

1

0

2

3

4

5

20

VDS (V)

ID (

A)

VGS=3.5V

4V

4.5V

5V

10V

0 2 40

5

4

3

2

1

6

VGS (V)

ID (

A)

(VDS=20V)

TC=125°C25°C

–40°C

0 21 3 40

1.0

0.5

1.5

2.0

5

ID (A)

RD

S (

ON

) (Ω

)(VGS=10V)

0.05 10.1 0.50.2

0.5

1

5

10

ID (A)

Re

(yf

s) (

S)

5

(VDS=20V)

125°C25°CTa=–40°C

–40 00

3.0

2.5

2.0

1.5

1.0

0.5

TC (°C)

RD

S (

ON

) (Ω

)

10050 150

ID=2.5AVGS=10V

0 10 20 30 40 5010

500

100

50

2000

1000

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Coss

Crss

0 0.5 1.0 1.50

3

2

1

5

4

VSD (V)

IDR

(A

)

(Ta=25°C)

3 5 10 50 100 6000.05

0.1

1

0.5

20

10

5

ID (

A)

VDS (V)

1msRDS (O

N) LIMITED

100µs

ID (pulse) max

(TC=25°C)

25

30

35

40

20

15

10

5

0

Without Heatsink



0 50 100 150

Ta (°C)

PT

(W

)

140

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5125

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 ±20 V

ID 10 –10 A






Tch 150 °C

Tstg –40 to +150 °C

PT






0 2 4 6 8 10

VDS (V)

2

4

6

8

10

12

14

15

0

ID (

A)

3.0V

3.3V

3.5V

10V

4.0V

VGS=2.7V

(Ta=25°C)

0 1 32 5

ID (

A)

VGS (V)

2

4

6

8

10

12

14

15

04

(VDS=10V)

Tc=125°C 25°C–40°C

0

0.04

0.08

0.12

0.16

0.20

0 2 4 6 8 10 12 14 15

ID (A)

RD

S (

ON

) (Ω

)

Ta=25°CVGS=4V

–400

500 100 150

0.04

0.08

0.12

0.16

0.20

TC (°C)

RD

S (

ON

) (Ω

)

ID=5AVGS=4V

–14

–15

–10

–12

–8

–2

–4

–6

00 –2 –4 –6 –8 –10

VDS (V)

ID (

A)

VGS=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

–10V

(Ta=25°C)

0

–2

–4

–6

–8

–10

–12

–14

–15

0 –1 –3–2 –5

ID (

A)

VGS (V)–4

25°C

–40°C

Tc=40°C

(VDS=–10V)

0

0.04

0.08

0.12

0.16

0.20

0 –2 –4 –6 –8 –10 –12 –14–15

ID (A)

RD

S (

ON

) (Ω

)

Ta=25°CVGS=–10V

–400

500 100 150

0.04

0.08

0.12

0.16

0.20

TC (°C)

RD

S (

ON

) (Ω

)

ID=–5AVGS=–10V

141

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





0.0 0.5 1.0 1.5

IDR

(A

)

VSD (V)

6

8

10

12

14

15

2

4

0

(Ta=25°C)

VGS=

10V

4V

0V

0.10.10.05 1 10

1

10

20

ID (A)

Re

(yf

s) (

S)

20

25°C

Tc=40°C

125°C

(VDS=10V)

0 10 20 30 40 50VDS (V)

1000

5000

Cap

acita

nce

(pF

)

100

10


Ciss

Coss

Crss

Single PulseTc=25°C

1001010.1

20

10

1

0.1

ID (

A)

VDS (V)

RDS (ON) L

IMIT

ED

100µs

1ms

10ms

30

35

40

20

25

15

10

5

00 50 100 150

Ta (°C)

PT

(W

)

Without Heatsink



0.0 –0.5 –1.0 –1.5

IDR

(A

)

VSD (V)

–6

–8

–10

–12

–14

–15

–2

0

–4

(Ta=25°C)

VGS=–1

0V–4

V 0V

0.1–0.05 –0.1 –1 –10

1

10

20

ID (A)

Re

(yf

s) (

S)

–20

(VDS=–10V)

25°C

Tc=–40°C

125°C

0 –10 –20 –30 –40 –50VDS (V)

1000

5000

Cap

acita

nce

(pF

)

100

10


Ciss

Coss

Crss

–100–10–1–0.1

–20

–10

–1

–0.1

ID (

A)

VDS (V)

RDS (ON)

LIM

ITED

100µs

1ms

10ms

Single PulseTc=25°C

SMA5125Electrical characteristics (Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V



Re(yfs) 8.0 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A


Ciss 460 pF VDS=10V, 1200 pF VDS=–10V,



td (on) 25 ns ID=5A, VDD 20V, 50 ns ID=–5A, VDD –20V,

tr 110 ns RL=4Ω, VGS=5V, 170 ns RL=4Ω, VGS=–5V,

td (off) 90 ns RG=50Ω, 180 ns RG=50Ω,

tf 55 ns see Fig.3 on page 16. 100 ns see Fig.4 on page 16.

VSD 1.15 ns ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V

trr 75 V ISD=5A, di/dt=100A/µs 100 ns ISD=–5A, di/dt=100A/µs

142

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5127(Ta=25°C)

Symbol Unit

VDSS 60 –60 V

VGSS ±20 20 V

ID 4 –4 A

ID(pulse) 8 (PW≤1ms, Duty≤1%) –8 (PW≤1ms, Duty≤1%) A





Tch 150 °C

Tstg –40 to +150 °C

PT






2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

8

6

2

4

00 2 4 6 8 10

VDS (V)

ID (

A)

3.5V

4.0V

4.5V

10V

VGS=3.0V

(Ta=25°C)

0 –10

–8

–6

VDS (V)

ID (

A)

–2 –6–4 –8

–2

0

–4

–3.2V

–3.6V

–4.0V

–4.5V

–10V

VGS=–2.7V

(Ta=25°C)

0.5

0.6

0.4

0.3

0.2

0.1

00 21 6 7543 8

ID (A)

RD

S (

ON

) (Ω

)

(Ta=25°C)

VGS=4V

10V

00

–2

0.2

0.4

0.5

0.6

ID (A)

RD

S (

ON

) (Ω

)

–4 –6 –8

0.3

0.1

(Ta=25°C)

VGS=–4V

–10V

–400.2

–25 50250 100 12575 150

0.4

0.3

0.6

0.5

0.8

0.7

Ta (°C)

ID=2AVGS=4V

RD

S (

ON

) (Ω

)

ID (

A)

VGS (V)0 –7–2–1 –3 –4 –5 –6

–8

–6

0

–2

–4

(VDS=–10V)

Tc=–40°C

25°C

125°C

ID (

A)

VGS (V)0 6 7321 4 5

0

1

2

3

4

5

6

7

8(VDS=10V)

25°C125°C

Ta=–40°C

–400.2

0

0.4

0.6

0.7

0.8

Ta (°C)

RD

S (

ON

) (Ω

)

50 100 150–25 25 75 125

0.5

0.3

ID=–2AVGS=–10V

143

N-ch P-ch N-ch

N-ch P-ch P-ch

N-ch P-ch





SMA5127Electrical characteristics (Ta=25°C)

N channel P channel





IGSS ±10 µA VGS=±20V 10 µA VGS= 20V





Ciss 150 pF VDS=10V 320 pF VDS=–10V,

Coss 70 pF f=1.0MHz 130 pF f=1.0MHz,


td (on) 12 nsID=2A, VDD 20V,

20 nsID=–2A, VDD –20V,

tr 40 nsRL=10Ω, VGS=5V,


td (off) 40 ns 70 ns

tf 25 nssee Fig.3 on page 16.

60 nssee Fig.4 on page 16.


trr 75 nsISD=2A, VGS=0V,

75 nsISD=–2A, VGS=0V,

di/dt=100A/µs di/dt=100A/µs

0.10.1

1

5

ID (A)

Re

(yf

s) (

S)

1 80.01

25°C

125°C

Tc=–40°C

(VDS=10V)

10.1

10 100

1

10ID

(A

)

VDS (V)

100µs

1ms

RDS (on) LIMITED10ms

(Tc=25°C)

25

30

20

15

10

5

0

Without Heatsink


0 50 100 150

Ta (°C)

PT

(W

)


–20

VD

S (

V)

VGS (V)–2

–5

–4

–3

0

–2

–1

–10

(Ta=25°C)

2 10 20

1

0

4

5

VD

S (

V)

VGS (V)

2

3

ID=4A

2A

(Ta=25°C)

–1–0.1

–10 –100

–1

–10

ID (

A)

VDS (V)

100µs

1ms

10ms

RDS (ON) LIMITED

(Tc=25°C)

0.1–0.05 –0.1 –1

1

5

ID (A)

Re

(yf

s) (

S)

–8

(VDS=–10V)Ta=–40°C

25°C

125°C

0 –10 –20 –30 –40 –50

10

5

100

1000

VDS (V)

Cap

acita

nce

(pF

)


Ciss

Coss

Crss

0 10 20 30 40 505

100

1000

VDS (V)

Cap

acita

nce

(pF

)

10

Ciss

Coss

Crss


NPN PNP

VDS-VGS Characteristics (Typical)

144

NPN PNP NPN

NPN PNP PNP

NPN PNP





SMA6010

R3 R4

2 8 9

1

3

4

R1

7

6

10

11

5 12

R2


(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A


IB 0.5 –0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

θ j–c 6.25 °C/W

PT W

RatingsNPN PNP

6

4

2

00 2 4 6

IC (

A)

VCE (V)

IB=4.0mA 2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

20000

0.03

(VCE=4V)

hFE

IC (A)

10000

5000

1000

500

100

500.05 0.1 0.5 1 5 6

typ

20000

0.03

(VCE=4V)

hFE

IC (A)

10000

5000

1000

500

100

500.05 0.1 0.5 1 56

Ta=125°C

–30°C25°C

75°C

6

00

IC (

A)

VBE (V)

5

4

3

2

1

1 2 3

–30°C

(VCE=4V)

Ta=125°C

75°C

25°C

–6

–4

–2

0

0 –2 –4 –6

IC (

A)

VCE (V)

–1.8mA–1.5mA

–1.2mA

–1.0mA–0.9mA

–0.8mA

IB=–2.2mA

20000

–0.03

(VCE=–4V)

hFE

IC (A)

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

typ

20000

–0.03

(VCE=–4V)

hFE

IC (A)

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

Ta=125°C

–30°C

75°C

25°C

–6

0

0

IC (

A)

VBE (V)

–5

–4

–3

–2

–1

–1 –2 –3

–30°

C

(VCE=–4V)

75°C

25°C

Ta=

125°

C





145

NPN PNP

NPN PNP

NPN PNP

VCE(sat)-IB Characteristics (Typical)

VCE(sat)-IC Temperature Characteristics (Typical)



SMA6010(Ta=25°C)

NPN PNP








VCE(sat) 1.5 V –1.5 V

VBE(sat) 2.0 V –2.0 V

VFEC 1.8 V IFEC=1A –1.8 V IFEC=–1A




fT 75 MHz VCE=12V, IE=–0.1A 200 MHz VCE=–12V, IE=0.2A



3

0.2

VC

E (

sat)

(V

)

IB (mA)

2

1

00.5 1 5 10 50 100 200

IC=4A

IC=1A

IC=2A

3

0.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

2

1

01 5 6

Ta=1

25°C

75°C

25°C

–30°

C

10

3

IC (

A)

VCE (V)

5

1

0.5

0.1

0.05

0.035 10 50 100


1ms10m

s

–3

–0.3

VC

E (

sat)

(V

)

IB (mA)

–2

–1

0–0.5 –1 –5 –10 –50 –100 –200

IC=–4A

IC=–2AIC=–1A

–3

–0.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–2

–1

0–1 –5 –6

125°C

25°C

75°C

Ta=–30°C

–10

–3

IC (

A)

–5

–1

–0.5

–0.1

–0.05

–0.03–5 –10 –50 –100


1ms10m

s

VCE (V)

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink



θ j-a-PW Characteristics

146

NPN PNP NPN

NPN PNP PNP

NPN PNP





SMA6014


2

R1 R2

4

R3

8

6

9

11

10

1

3 7

5 12

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 2 –2 A


IB 0.5 –0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

θ j–c 6.25 °C/W

PT W

RatingsNPN PNP

6

4

2

00 2 4 6

IB=4.0mA

1.0mA

0.6mA

0.4mA

0.3mA

2.0mA

IC (

A)

VCE (V)

0.03 0.05 0.1 0.5 1 3100

500

1000

5000

20000

10000

(VCE=4V)

IC (A)

hFE

typ

0.03 0.05 0.1 0.5 1 3100

500

1000

5000

10000

20000(VCE=4V)

IC (A)

hFE

Ta=125°C

75°C

25°C

–30°C

3

2

1

00 1 2

(VCE=4V)

VBE (V)

IC (

A)

Ta=

125°

C75

°C25

°C

–30°

C

00

–1

–2

–4

–3

–1 –2 –3

VCE (V)

IC (

A)

–5–4 –6

IB=–

10.0

mA

–5.0

mA

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–0.02 –0.05 –0.1 –0.5 –1 –350

100

500

1000

5000

IC (A)

hF

E

(VCE=–4V)

typ

–0.02 –0.05 –0.1 –0.5 –1 –350

100

500

1000

5000

10000(VCE=–4V)

IC (A)

hFE

Ta=12

5°C

–30°C

25°C75°C

–3

–2

–1

00 –1 –2 –3

(VCE=–4V)

VBE (V)

IC (

A)

Ta=1

25°C

75°C

25°C

–30°

C





147

NPN PNP

NPN PNP

NPN PNP





SMA6014(Ta=25°C)

NPN PNP








VCE(sat) 1.5 V –1.5 V

VBE(sat) 2.2 V –2.2 V

VFEC — V –1.8 V IFEC=–1A

trr — µs 3.0 µs IFEC=±100mA




fT 20 MHz VCE=12V, IE=–1A 100 MHz VCE=–12V, IE=0.1A



2

1

00.1 0.5 1 5 10

IC=2A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

2

1

00.5 1 3

(IC / IB=1000)

IC (A)

VC

E (

sat)

(V

)

25°CTa=125°C

–30°C

75°C

5

1

0.5

0.1

0.05

0.033 5 10 50 100

VCE (V)

IC (

A)

10ms

100µs

1ms


20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

–3

–2

–1

0–0.1 –0.5 –1 –3

VC

E (

sat)

(V

)

IB (mA)

(IC=–1A)

Ta=

125°

C

75°C

25°C

–30°

C

–3

–2

–1

0–0.2 –0.5 –1 –3

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

Ta=125°C75°C

25°C

–30°C

–5

–1

–0.5

–0.1

–0.05

–0.03–3 –5 –10 –50 –100

VCE (V)

IC (

A)

10ms

100µs1ms


PW (mS)0.5 100 1000500501051

5

0.5

1

10

20

θj–

a (

°C /

W)

0.2




PNP

NPN

148

NPN PNP NPN

NPN PNP PNP

NPN PNP





(Ta=25°C)

Symbol Unit

VCBO 100±15 –60 V

VCEO 100±15 –60 V

VEBO 6 –6 V

ICP 1.5 –3 A

IB 0.5 –0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

RatingsNPN PNP

SMA6511


89

67

34

12

5

10

12

11

R3

R1 R2

R4

PT W

IC (

A)

0 1 2 4 5 6

VCE (V)3

1

2

3

0.5mA1mA2mA5mA

0.3mA

0.2mA

20000

10000

5000

1000

500

100

0.03

IC (A)

hFE

500.1 0.5 1 30.05

typ

(VCE=4V)

(VCE=4V)

0.03

IC (A)0.1 0.5 1 30.05

20000

10000

5000

1000

500

100

50

hFE

Ta=125°C

–30°C

75°C

25°C

IC (

A)

0 1 2 3

VBE (V)

1

2

3(VCE=4V)

0

Ta=1

25°C

–30°

C75°C

25°C

00

–1

–2

–3

–1 –2 –3

VCE (V)

IC (

A)

–5–4 –6

IB=–

10.0

mA

–5.0

mA

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

typ

–0.02 –0.05 –0.1 –0.5 –1 –350

100

500

1000

5000

IC (A)

hFE

(VCE=–4V)

(VCE=–4V)10000

5000

1000

500

100

50–0.02 –0.05 –0.1 –0.5 –1 –3

IC (A)

hFE Ta=

125°C

–30°C

75°C25°C

00

–3

–1 –2

–2

–1

–3

IC (

A)

VBE (V)

(VCE=–4V)

–30°

C

25°C

75°C

Ta=1

25°C

PNP + NPN DarlingtonStepper motor driver withdual supply voltage switch External dimensions B • • • SMA



149

NPN PNP

NPN PNP

NPN PNP





(Ta=25°C)

NPN PNP






VCEO 85 100 115 V IC=10mA –60 V IC=–10mA



SMA6511

0.1

IB (mA)

VC

E (

sat)

(V

)

0

1

2

3

0.5 1 5 10 50 100

IC=2A

IC=1A

0.3IC (A)

0.5 1 3

VC

E (

sat) (

V)

0

1

2

3

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)

1.5

IC (

A)

30.03

5 10

VCE (V)

1

0.5

0.1

0.05

50 100 200


1ms

10ms

100µs

50µs

PW (mS)10050 10005005 10

5

1

10

20θ

j–a

(°C

/ W

)

1

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

–0.1

IB (mA)–5–1–0.5

0

–1

–3

–2

VC

E (

sat)

(V

)

(IC=–1A)

Ta=

125°

C

–30°

C

75°C

25°C

–0.20

–1

–2

–0.5 –1 –3

–3

125°C

Ta=–30°C

75°CVC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

25°C

–5–0.1

–0.5

–1

–10 –50 –100

–3

–5

–3VCE (V)

IC (

A)


1ms

10ms

100µs

PW (mS)0.5 100 1000500501051

5

0.5

1

10

20

θj–

a (

°C /

W)

0.2




PNP

NPN

150

NPN PNP NPN

NPN PNP PNP

NPN PNP





SMA6512


89

67

34

12

5

10

12

11

R3

R1 R2

R4

(Ta=25°C)

Symbol Unit

VCBO 60±10 –60 V

VCEO 60±10 –60 V

VEBO 6 –6 V

ICP 1.5 –3 A

IB 0.5 –0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

PT W

RatingsNPN PNP

00

1

2

3

1 2 3

VCE (V)

IC (

A)

54 6

IB=1

0.0m

A

5.0m

A

2.0mA

1.0mA

0.6mA

0.4mA

0.3mA

0.02

IC (A)0.10.05 10.5 3

30

50

1000

100

500

20000

10000

5000

hFE

(VCE=4V)

typ

(VCE=4V)20000

10000

5000

1000

500

100

50

300.02 0.05 0.1 0.5 1 3

IC (A)

hF

E

Ta=125°C

–30°C75°C

25°C

0

VBE (V)21 3

0

3

2

1

IC (

A)

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

00

–1

–2

–3

–1 –2 –3

VCE (V)

IC (

A)

–5–4 –6

IB=–

10.0

mA

–5.0

mA

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

typ

–0.02 –0.05 –0.1 –0.5 –1 –350

100

500

1000

5000

IC (A)

hFE

(VCE=–4V)

(VCE=–4V)10000

5000

1000

500

100

50–0.02 –0.05 –0.1 –0.5 –1 –3

IC (A)

hFE

–30°C

75°C25°C

Ta=125°C

00

–3

–1 –2

–2

–1

–3

IC (

A)

VBE (V)

(VCE=–4V)

–30°

C

25°C

75°C

Ta=1

25°C

PNP + NPN DarlingtonStepper motor driver withdual supply voltage switch External dimensions B • • • SMA



151

NPN PNP

NPN PNP

NPN PNP

VCE(sat)-IB Temperature Characteristics (Typical)




(Ta=25°C)

NPN PNP






VCEO 50 60 70 V IC=10mA –60 V IC=–10mA



0.1

IB (mA)510.5

0

1

3

2

VC

E (

sat)

(V

)

(IC=1A)

Ta=

125°

C

75°C

25°C

–30°

C

(IC / IB=1000)3

2

00.2 0.5 1

IC (A)

VC

E (

sat)

(V

)

1

3

75°C

25°C

–30°

C

Ta=

125°

C

1.5

1

0.5

0.1

0.053 5 10 50 100

VCE (V)

IC

(A)


1ms

10ms

100µs

PW (mS)0.5 100 1000500501051

5

1

0.5

10

30

θj–a

(°C

/ W

)

0.2

20

15

10

5

0–40 0 50 100 150

PT (

W)

Ta (°C)

With Infinite H

eatsink

Without Heatsink

–0.1

IB (mA)–5–1–0.5

0

–1

–3

–2

VC

E (

sat)

(V

)

(IC=–1A)

Ta=

125°

C

75°C 25

°C

–30°

C

–0.20

–1

–2

–0.5 –1 –3

–3

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

125°C

75°C

25°C Ta=–30°C

–5–0.1

–0.5

–1

–10 –50 –100

–3

–5

–3


VCE (V)

IC (

A)

1ms

10m

s

100µs

PW (mS)0.5 100 1000500501051

5

0.5

1

10

20

θj–a

(°C

/ W

)

0.2

SMA6512



PNP

NPN


152




(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 4 A


3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 50 60 70 V IC=10mA




tstg 4.0 µs IC=3A,



PT W

STA301A

5

4

3

2

1

00 1 2 3 4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=2.0mA

VCE (V)

IC (

A)

20000

0.05 0.1 1 4

IC (A)

10000

5000

1000

500

100

500.5

hFE

(VCE=4V)

typ

20000

10000

5000

1000

500

100

0.05 0.1 0.5 1 4

25°ChFE

IC (A)

(VCE=4V)

–30°C

Ta=125°C

0.1

2

1

00.5 1 4

IC (A)

VC

E (

sat)

(V

)

Ta=–30°C

25°C

125°C

(IC / IB=1000) 3

2

1

00.2 0.5 1 5 10 50 100

VC

E (

sat)

(V

)

IB (mA)

IC=4AIC=3A

IC=2A

IC=1A

30

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 1500

PT (

W)

Ta (°C)


2

4

6

8

10

12

14

16

With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

10

5

1

0.5

0.1

3 5 10 50 100

IC (

A)

VCE (V)

0.05

10ms

1ms


2

1

3

R1 R2

45

67

8


NPN Darlington


4

3

2

1

00 1 2

IC (

A)

VBE (V)

(VCE=4V)

Ta=

125°

C

75°C

25°C

–30°

C



External dimensions C • • • STA (8-pin)


153





(Ta=25°C)

Symbol Ratings Unit

VCBO –50 V

VCEO –50 V

VEBO –6 V

IC –4 A

ICP –8 (PW≤10ms, Du≤50%) A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)











PT W

STA302A

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

–0.8mA

–1.0mA

–1.2mA

–1.5mA–1.8mA

IB=–

2.3m

A

IC (

A)

VCE (V)

–0.9mA

–0.03

10000

5000

1000

500

100

50

20–0.05 –0.1 –0.5 –1 –5 –6

(VCE=–4V)

hFE

IC (A)

typ

10000

5000

1000

500

100

–0.02 –0.1 –0.5 –1 –4

hFE

IC (A)

(VCE=–4V)

–0.05

50

20

Ta=125°C

25°C

–30°C

–0.7

–1

0–4

IC (A)

VC

E (

sat)

(V

)

–1

–2

25°C

125°C

Ta=–30°C

(IC / IB=500)

IC=–4A

IC=–2AIC=–1A

–3

–0.2 –0.5 –1 –5 –10 –50

–2

–1

0–100

VC

E (

sat)

(V

)

IB (mA)

–6

–4

–2

00 –1 –2 –3

–1

–3

–5

–30°

C

Ta=

125°

C

75°C

25°C

(VCE=–4V)

IC (

A)

VBE (V)

20

10

5

10

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 1500

PT (

W)

Ta (°C)

2

4

6

8

10

12

14

16With Silicone GreaseNatural CoolingHeatsink: Aluminumin mm

With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

–10

–5

–1

–0.5

–0.1

–3 –5 –10 –50

IC (

A)

VCE (V)

–0.03

–0.05

–100


1ms

10ms

2

1

3

R1 R2

4

5

6

7

8


PNP Darlington

General purpose/3-phase motor drive External dimensions C • • • STA (8-pin)




154




(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 4 A


3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 100 V IC=10mA




tstg 5.0 µs IC=2A,



PT W

STA303A

4

3

2

1

010 2 3 4 5

IB=1mA0.8mA

0.6mA

0.5mA

0.4mA

0.3mAIC (

A)

VCE (V)

20000

10000

5000

1000

500

100

50

(VCE=4V)

typ

0.02 0.05 0.1 0.5 1 4

hFE

IC (A)

20000

10000

5000

500

100

0.02 0.05 0.5 1 4

hFE

IC (A)

1000

500.1

Ta=125°C

25°C

–30°C

(VCE=4V)

0.2

3

1

00.5 1 4

IC (A)

(IC / IB=1000)

VC

E (

sat)

(V

) 2

Ta=–30°C25°C

125°C

3

2

1

00.2 0.5 1 5 10 50 100

IB (mA)

VC

E (

sat)

(V

)

IC=4A

IC=3AIC=2A

IC=1A

4

3

2

1

0 1 2

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 1500

PT (

W)

Ta (°C)


2

4

6

8

10

12

14

16

With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

10

5

1

0.5

0.1

3 5 10 50

IC (

A)

VCE (V)

0.05

100 200

10ms

1ms

0.03


2

1

3

R1 R2

45

67

8


NPN Darlington

General purpose/3-phase motor drive





155





(Ta=25°C)

Symbol Ratings Unit

VCBO 550 V

VCEO 550 V

VEBO 6 V

IC 1 A


IB 0.5 A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 75 150 mA VEB=6V

VCEO 550 V IC=100µA

hFE 200 400 1000 VCE=4V, IC=500mA

VCE(sat) 1.0 1.5 V

VBE(sat) 1.5 2.2 V

VFEC 1.1 1.5 V IFEC=1A


tstg 3.5 µs IC=500mA,





PT W

STA304A

IC=500mA, IB=10mA

R1: 500Ω typ R2: 70Ω typ

2

1

3

R1

R2

45

67

8

1.0

0.8

0.6

0.4

0.2

00 1 2 3 4 5 6

IC (

A)

VCE (V)

IB=20mA

10m

A

5mA

2mA

1.5mA

1000

hFE

100

50

10

IC (A)0.03 0.10.05 10.5 2

(VCE=4V)

typ

500

1000hF

E

100

50

10

IC (A)0.03 0.10.05 10.5 2

(VCE=4V)

500

Ta=125°C

25°C75°C

–30°C

3

2

1

0

(IC / IB=100)

0.2 0.5 1 2

VC

E (

sat)

(V

)

IC (A)

Ta=–30°C

25°C

75°C

125°C

3

2

1

01

VC

E (

sat)

(V

)

IB (mA)5 50 50010 100

IC=1A

IC=0.5A

2.0

IC (

A)

VBE (V)0

(VCE=4V)

1.5

1.0

0.5

01 2 3

Ta=

125°

C75

°C25

°C–3

0°C

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 1500

PT (

W)

Ta (°C)

2

4

6

8

10

12

14


With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2 0.1

0.05

1

0.5

0.01

0.005

0.003

5

VCE (V)

IC (

A)

3 5 10 50 100 600500

10ms

1ms

100µs


NPN Darlington

3-phase motor drive External dimensions C • • • STA (8-pin)



156




(Ta=25°C)

Symbol Ratings Unit

VCBO –550 V

VCEO –550 V

VEBO –6 V

IC –1 A


IB –0.5 A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO –10 –20 mA VEB=–6V

VCEO –550 V IC=–100µA

hFE 200 400 1000 VCE=–4V, IC=–500mA

VCE(sat) –1.0 –1.5 V

VBE(sat) –1.6 –2.2 V


tstg 13.0 µs IC=–500mA,


fT 15 MHz VCE=–12V, IE=0.2A



PT W

STA305A

IC=–500mA, IB=–10mA

R1: 500Ω typ R2: 70Ω typ

2

1

3

R1 R2

4

5

6

7

8

–1.0

–0.8

–0.6

–0.4

–0.2

0–10 –2 –3 –4 –5 –6

IC (

A)

VCE (V)

–5mA

–2mA

IB=–20mA

–10m

A

–1.5mA

1000

hFE

100

50

10

IC (A)–0.03 –0.05 –0.1 –1–0.5 –2

(VCE=–4V)

typ

500

1000hF

E

100

50

10

IC (A)–0.03 –0.05 –0.1 –1–0.5 –2

(VCE=–4V)

500

Ta=125°C

25°C75°C

–30°C

–3

–2

–1

0–0.2 –0.5 –1 –2

(IC / IB=100)

VC

E (

sat)

(V

)

IC (A)

Ta=125°C

75°C

25°C

–30°C

–3

–2

–1

0–1

VC

E (

sat)

(V

)

IB (mA)–5 –50 –500–10 –100

IC=1A

IC=0.5A

–2.0

IC (

A)

VBE (V)0

(VCE=–4V)

–1.5

–1.0

–0.5

0–1 –2 –3

Ta=

125°

C75

°C25

°C–3

0°C

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 1500

PT (

W)

Ta (°C)

2

4

6

8

10

12

14


With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2 –0.1

–0.05

–1

–0.5

–0.01

–0.005

–0.003

–5

VCE (V)

IC (

A)

–3 –5 –10 –50 –100 –600–500

10ms

1ms

100µs


PNP Darlington

3-phase motor drive External dimensions C • • • STA (8-pin)




157





(Ta=25°C)

Symbol Ratings Unit

VCBO –120 V

VCEO –120 V

VEBO –6 V

IC –4 A

IB –1 A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)






VCE(sat) –1.5 V

VBE(sat) –2.5 V


PT W

STA308A

IC=–2A, IB=–4mA

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

IC (

A)

VCE (V)

IB=–5mA –2mA–1.5mA

–1.0mA

–0.7mA

–0.5mA

–0.3mA

10000

5000

1000

500

100

50

hFE

(VCE=–4V)

–0.03 –0.05 –0.1 –0.5 –1 –4

IC (A)

typ

10000

5000

1000

500

100

50–0.03 –0.05 –0.1 –0.5 –1 –4

hFE

IC (A)

(VCE=–4V)

75°C25°C

Ta=125°C

–30°C

(IC / IB=1000)–3

–0.2

VC

E (

sat)

(V

)

IC (A)

–2

–1

0–0.5 –1 –4

125°C

75°C25°C

Ta=–30°C

–3

–2

–1

0–0.1 –0.5 –1 –10–5 –50 –100

IB (mA)

VC

E (

sat)

(V

)

IC=–4A

IC=–2A

IC=–1A

(VCE=–4V)–4

–3

–2

–1

0

IC (

A)

0 –1 –2 –3

VBE (V)

Ta=

125°

C75

°C25

°C–3

0°C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–400

PT (

W)

Ta (°C)

2

4

6

8

10

12

14

16With Silicone GreaseSingle PulseWithout HeatsinkTa=25°Cin mm

0 50 100 150

With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

–10

–3

IC (

A)

VCE (V)

–5

–1

–0.5

–0.1

–0.05

–0.03–5 –10 –50 –100 –200

10ms

1ms

100µs


2

1

3

R1 R2

4

5

6

7

8


PNP Darlington

General purpose External dimensions C • • • STA (8-pin)




158


(Ta=25°C)

Symbol Ratings Unit

VCBO 60 V

VCEO 60 V

VEBO 6 V

IC 3 A


3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 100 µA VEB=6V

VCEO 60 V IC=25mA

hFE 300 VCE=4V, IC=0.5A



tstg 3.0 µs IC=1A,

tf 1.2 µs IB1=15mA, IB2=–30mA


PT W

STA312A

3

2

1

0

IC (

A)

0 1 2 3 4 5 6

VCE (V)

IB=12mA8mA

5mA

3mA

2mA

1mA

0.5mA

2000

1000

500

1000.01 0.05 0.1 0.5 1 3

typ

hFE

IC (A)

(VCE=4V)2000

1000

500

100

hFE

0.01 0.05 0.1 0.5 1 3

IC (A)

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

1.5

1.0

0.5

0

VBE (sat)

VCE (sat)

(IC / IB=20)

VC

E (

sat)

, VB

E (

sat)

(V

)

0.01 0.1 1 50.50.05

IC (A)

1.5

1.0

0.5

0

IC= 3A

IC=2A

IC=1A

0.001 0.005 0.01 0.05 0.1 0.5 1

VC

E (

sat)

(V

)

IB (A)

3

2

1

00 0.5 1.0 1.5

IC (

A)

VBE (V)

(VCE=4V)

Ta=

125°

C75

°C25

°C–3

0°C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–400

PT (

W)

2

4

6

8

10

12

14

16

0 50 100 150Ta (°C)


With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

10

5

1

0.5

0.1

0.053 5 10 50 100

IC (

A)

VCE (V)

10ms

1ms


2

1

3

84

56

7

NPN

General purpose External dimensions C • • • STA (8-pin)





VCE(sat), VBE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)


159


(Ta=25°C)

Symbol Ratings Unit

VCBO –50 V

VCEO –50 V

VEBO –5 V

IC –3 A


IB –1 A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO –10 µA VEB=–8V


hFE 100 350 VCE=–4V, IC=–1A

VCE(sat) –1.0 V

VBE(sat) –1.5 V


PT W

STA322A

IC=–2A, IB=–40mA

21

34

56

7

8

–5

IC (

A)

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

VCE (V)

–50mA

–40mA

–30mA

–20mA

–10mA

IB=–

80m

A –60mA

–5mA

1000

500

100

50

30

(VCE=–4V)

–0.01 –0.05 –0.1 –0.5 –1 –5

IC (A)

hFE

typ

500

100

–0.01 –0.1 –0.5 –1 –5

hFE

IC (A)

(VCE=–4V)

–0.0530

50

Ta=125°C

25°C

–30°C

1000

–0.01

–1.0

0

IC (A)

(IC / IB=50)

VC

E (

sat)

(V

)

–0.5

–0.05 –0.1 –0.5 –1 –5

25°C

Ta=

125°

C

–30°

C

–2

–1

0–0.002 –0.005 –0.01 –0.05 –0.1 –0.5 –1

IC=–2A

IC=–1AIC=–0.5A

VC

E (

sat)

(V

)

IB (A)

–3

–2

–1

0

(VCE=–4V)

0 –0.5 –1.0 –1.5

IC (

A)

VBE (V)

Ta=1

25°C

75°C

25°C

–30°

C

30

10

5

1

0.5

0.10.1 0.5 1 5 10 50 100 5001000 5000

PW (mS)

θj–

a (

°C /

W)

–400

PT (

W)

2

4

6

8

10

12

14

16

0 50 100 150Ta (°C)


With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

–10

–5

–1

–0.5

–0.1

–0.05–0.5

IC (

A)

–1 –5 –10 VCE (V)

–50

10ms

5ms

1ms


PNP

General purpose







160


(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 2 A


IB 0.5 A

3 (Ta=25°C)

15 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=50V

IEBO 5 mA VEB=6V

VCEO 50 60 70 V IC=10mA

hFE 2000 5000 12000 VCE=4V, IC=1A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.8 2.2 V



tstg 4.0 µs IC=1A,





PT W

STA371A

IC=1A, IB=2mA


2

1

3

R1 R2

45

67

8

0

1

2

3

4

IC (

A)

0 1 2 3

VCE (V)54 6

0.3mA

0.4mA

0.6mA

2.0mA5.0mA

1.0mA

IB=10.0mA

0.02

IC (A)0.10.05 10.5 4

30

50

1000

100

500

10000

5000

hFE

(VCE=4V)

Typ

(VCE=4V)20000

10000

5000

1000

500

100

50

300.02 0.05 0.1 0.5 1 4

IC (A)

hF

E 75°C

25°C

–30°CTa=

125°C

(IC / IB=1000)3

2

00.2 0.5 1

IC (A)

VC

E (

sat)

(V

)

1

4

75°C

25°C

–30°

C

Ta=

125°

C

0.1

IB (mA)310.5

0

1

3

2

VC

E (

sat)

(V

)

(IC=1A)

Ta=

125°

C

–30°

C

75°C

25°C

VBE (V)0 21 3

0

3

2

1

4

IC (

A)

(VCE=4V)

Ta=1

25°C

75°C

25°C –30°

C

PW (mS)0.5 100 1000500501051

5

1

0.5

10

30

θj–

a (

°C /

W)

0.2 –400

PT (

W)

2

4

6

8

10

12

14

16

0 50 100 150Ta (°C)


With Infinite H

eatsink

Without Heatsink

25×50×2

50×50×2

5

1

0.5

0.1

0.053 5 10 50 100

VCE (V)

IC (

A)


1ms10ms

100µs

NPN Darlington

With built-in avalanche diode External dimensions C • • • STA (8-pin)





VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)


161




STA401A(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 4 A


4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 50 60 70 V IC=10mA




tstg 4.0 µs IC=3A,


5

4

3

2

1

00 1 2 3 4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=2.0mA

VCE (V)

IC

(A)

20000

0.05 0.1 1 4

IC (A)

10000

5000

1000

500

100

500.5

hF

E

(VCE=4V)

typ

20000

10000

5000

1000

500

100

0.05 0.1 0.5 1 4

Ta=125°C

25°C

–30°ChFE

IC (A)

(VCE=4V)

0.1

2

1

00.5 1 4

IC (A)

VC

E (

sat)

(V

)

Ta=–30°C

25°C

125°C

(IC / IB=1000)3

2

1

00.2 0.5 1 5 10 50 100

VC

E (

sat)

(V

)

IB (mA)

IC=4AIC=2A

IC=3A

IC=1A

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)

24


100×100×2

50×50×2

25×50×2

Without Heatsink


10

5

1

0.5

0.1

3 5 10 50

IC (

A)

VCE (V)

0.05100

10ms

1ms


2

1

3

R1 R2

45

67

89

10


NPN Darlington


0 1VBE (V)

2

3

4

2

1

0

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C


PT W




External dimensions D • • • STA (10-pin)

162




(Ta=25°C)

Symbol Ratings Unit

VCBO –50 V

VCEO –50 V

VEBO –6 V

IC –4 A

ICP –8 (PW≤10ms, Du≤50%) A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)











PT W

STA402A


1 R1 R2

23

45

67

89

10

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

–1.5mA

–1.2mA

–1.0mA

–0.8mA

IC (

A)

VCE (V)

IB=–

2.3m

A

–1.8mA10000

5000

1000

500

100

50

20

(VCE=–4V)

typ

–0.02 –0.05 –0.1 –0.5 –1 –4

hFE

IC (A)

10000

5000

1000

500

100

–0.02

hFE

IC (A)

(VCE=–4V)

50

20–0.05 –0.1 –0.5 –1 –4

Ta=125°C

25°C

–30°C

–0.7

–2

–1

0–4

IC (A)

VC

E (

sat)

(V

)

Ta=–30°C

25°C

125°C

(IC / IB=500)

–1

–3

–2

–1

0–0.5 –0.1 –5 –10 –50

IC=–4A

IC=–2A

IC=–1A

IB (mA)

VC

E (

sat)

(V

)

–4

–3

–2

–1

00 –1 –2 –3

IC (

A)

VBE (V)

(VCE=–4V)

Ta=

125°

C75

°C25

°C

–30°

C

20

10

5

10

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

–10

–5

–1

–0.5

–0.1

–3 –5 –10 –50

IC (

A)

VCE (V)

–0.05

–100

10ms

1ms

–0.03


PNP Darlington

General purpose External dimensions D • • • STA (10-pin)




163




(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 4 A


4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 100 V IC=10mA




tstg 5.0 µs IC=2A,



PT W

STA403A


2

1

3

R1 R2

45

67

89

10

4

3

2

1

010 2 3 4 5

IB=1mA 0.8mA

0.6mA

0.5mA

0.4mA

0.3mAIC (

A)

VCE (V)

20000

10000

5000

1000

500

100

50

(VCE=4V)

typ

0.02 0.05 0.1 0.5 1 4

hFE

IC (A)

20000

10000

5000

500

100

0.02 0.05 0.5 1 4

hFE

IC (A)

1000

500.1

Ta=125°C

25°C

–30°

C

(VCE=4V)

0.2

3

1

00.5 1 4

IC (A)

VC

E (

sat)

(V

) 2

Ta=–30°C25°C

125°C

(IC / IB=1000)3

2

1

00.2 0.5 1 5 10 50 100

IB (mA)

VC

E (

sat)

(V

)

IC=1A

IC=2AIC=3A

IC=4A

4

3

2

1

0 1 2

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

20

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

10

5

1

0.5

0.1

3 5 10 50

IC (

A)

VCE (V)

0.05

100

10ms

1ms

0.03


NPN Darlington




164




(Ta=25°C)

Symbol Ratings Unit

VCBO 200 V

VCEO 200 V

VEBO 6 V

IC 3 A


4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 200 V IC=10mA


VCE(sat) 2.0 V IC=1A, IB=1.5mA


PT W

STA404A

6

5

4

3

2

1

0

IC (

A)

0 1 2 3 4 5 6

VCE (V)

IB=200mA100mA

30mA

10mA

3mA

1mA

(VCE=4V)5000

1000

500

100

50

300.03 0.05 0.1 0.5 1 5 6

hFE

IC (A)

5000

1000

500

100

50

300.03 0.05 0.1 0.5 5 6

(VCE=4V)hF

E

IC (A)

Ta=12

5°C

75°C

25°C

–30°

C

3

2

1

0

VC

E (

sat)

(V

)

IC=3A

IC=1.5A

IC=1A

0.5 1 5 10 50 100 200

IB (mA)

6

5

4

3

2

1

00 1 2 3

IC (

A)

VBE (V)

(VCE=4V)

–30°

C

75°C

25°C

Ta=1

25°C

3

2

1

0

VC

E (

sat)

(V

)

0.2 0.5 1 5 6

IC (A)

(IC / IB=100)

–30°C

75°C25°C

Ta=125°C

20

10

5

1

0.51 5 10 50 100 5001000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

1mS

1µS

10mS

10

5

1

0.5

0.1

0.05

0.035 10 50 100 200

IC (

A)

VCE (V)


2

1

3

R1 R2

45

67

89

10


NPN Darlington





165




(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 6 A

IB 1 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=50V

IEBO 10 mA VEB=6V

VCEO 50 60 70 V IC=50mA

hFE 2000 15000 VCE=2V, IC=3A

VCE(sat) 1.5 V

VBE(sat) 2.0 V

ES/B 200 mJ VCC 20V, L=10mH, IC=6.4A


PT W

STA406A

IC=3A, IB=10mA


2

1

3

R1 R2

45

67

89

10

6

0

1

2

3

4

5

0 1 2 3 4 5 6

VCE (V)

1mA

0.8mA

0.6mA

0.4mA

1.5mAIB=10mA

IC (

A)

20000

hF

E

10000

5000

1000

500

100

50

300.03 0.05 0.1 0.5 1 56

typ

IC (A)

(VCE=2V)hF

E

500

100

50

300.03 0.05 0.1 0.5 1 5 6

IC (A)

(VCE=2V)

Ta=125°C

75°C

25°C

–30°C

1000

5000

10000

20000

3

2

1

00.3 0.5 1 5 6

IC (A)

(IC / IB=1000)

VC

E (

sat)

(V

)

125°C

Ta=–30°C25°C

75°C

3

2

1

00.1 0.5 1 5 10 50 100

IC=6A

IC=3A

IC=1A

VC

E (

sat)

(V

)

IB (mA)

IC (

A)

6

1

2

3

4

5

0 1 2 3

VBE (V)

0

(VCE=2V)

Ta=

125°

C75

°C25

°C–3

0°C

20

10

5

1

0.5

θj–a

(°C

/ W

)

PW (mS)1 5 10 50 100 500 1000 –40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

IC (

A)

20

0.05

0.1

0.5

1

5

10

3 5 10 50 100

1ms10ms

VCE (V)

100µs


NPN Darlington






166


(Ta=25°C)

Symbol Ratings Unit

VCBO –120 V

VCEO –120 V

VEBO –6 V

IC –4 A

IB –1 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)






VCE(sat) –1.5 V

VBE(sat) –2.5 V


PT W

STA408A

IC=–2A, IB=–4mA


1

3

R1 R2

2

5

4

7

6

9

8

10

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

IC (

A)

VCE (V)

IB=–5mA –2mA–1.5mA

–1.0mA

–0.7mA

–0.5mA

–0.3mA

10000

5000

1000

500

100

50

hFE

typ

(VCE=–4V)

–0.03 –0.05 –0.1 –0.5 –1 –4

IC (A)

10000

5000

1000

500

100

50–0.03 –0.05 –0.1 –0.5 –1 –4

hFE

Ta=125°C

IC (A)

–30°C

75°C

(VCE=–4V)

25°C

(IC / IB=1000)–3

–0.2

VC

E (

sat)

(V

)

IC (A)

–2

–1

0–0.5 –1 –4

125°C

75°C 25°CTa=–30°C

–3

–2

–1

0–0.1 –0.5 –1 –10–5 –50 –100

IB (mA)

VC

E (

sat)

(V

)

IC=–4A

IC=–2A

IC=–1A

(VCE=–4V)–4

–3

–2

–1

0

IC (

A)

0 –1 –2 –3

VBE (V)

Ta=

125°

C

75°C

25°C

–30°

C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

–10

–3

IC (

A)

VCE (V)

–5

–1

–0.5

–0.1

–0.05

–0.03–5 –10 –50 –100 –200


10ms

1ms

100µs

PNP Darlington








167


(Ta=25°C)

Symbol Ratings Unit

VCBO 60 V

VCEO 60 V

VEBO 6 V

IC 3 A


4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 100 µA VEB=6V

VCEO 60 V IC=25mA




tstg 3.0 µs IC=1A,

tf 1.2 µs IB1=15mA, IB2=–30mA


PT W

STA412A

3

2

1

0

IC (

A)

0 1 2 3 4 5 6

VCE (V)

IB=12mA8mA

5mA

3mA

2mA

1mA

0.5mA

2000

1000

500

1000.01 0.05 0.1 0.5 1 3

typ

hFE

IC (A)

(VCE=4V)2000

1000

500

100

hFE

0.01 0.05 0.1 0.5 1 3

IC (A)

(VCE=4V)

Ta=125°C

75°C

–30°C

25°C

1.5

1.0

0.5

0

VBE (sat)

VCE (sat)

(IC / IB=20)

VC

E (

sat)

, VB

E (

sat)

(V

)

0.01 0.1 1 50.50.05

IC (A)

1.5

1.0

0.5

0

IC=3A

IC=2A

IC=1A

0.001 0.005 0.01 0.05 0.1 0.5 1

VC

E (

sat)

(V

)

IB (A)

3

2

1

00 0.5 1.0 1.5

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

10

5

1

0.5

0.1

0.053 5 10 50 100

IC (

A)

VCE (V)


1ms10m

s

2

3

4

5

6

7

8

9

101

NPN

General purpose








168


(Ta=25°C)

Symbol Ratings Unit

VCBO 35±5 V

VCEO 35±5 V

VEBO 6 V

IC 3 A

IB 1 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=30V

IEBO 10 µA VEB=6V

VCEO 30 40 V IC=25mA




PT W

STA413A

2

3

101

4

5

6

7

8

9

3.0

2.0

1.0

00 1.0 2.0 3.0

IC (

A)

VCE (V)

6mA8mA

10m

A

15m

A

5mA

4mA

3mA

2mA

IB=1mA

5000

1000

500

100

(VCE=4V)

0.01 0.05 0.1 0.5 1 3

Ta=125°C

–55°C

25°C

hFE

IC (A)

75°C

1.2

0.01

VC

E (

sat)

(V

)

IC (A)0.05 0.1 0.5 1

0.5

IC /

IB=5

00

3

1.0

0

100

20

1.2

1

VC

E (

sat)

(V

)

IB (mA)

0.5

IC=3A

1.0

05 10 50 100 500 1000

2A

1A

0.5A

4.0

3.0

2.0

1.0

00 0.5 1.0 1.5

(VCE=4V)

IC (

A)

VBE (V)

Ta=1

25°C

75°C

25°C

–55°

C

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

10.0

IC (

A)

VCE (V)

5.0

1.0

0.5

0.252 10 50

10ms

1ms

100ms

DC (TC=25°C)


5000

0.01

hFE

IC (A)

1000

typ

0.05 0.1 0.5 1 3

500

100

(VCE=4V)

20.0

10.0

5.0

1.0

0.5

0.1

θj–

a (

°C /

W)

0.1 0.5 1.0 5.0 10 50100 5001000 5000

PW (mS)

NPN

With built-in avalanche diode External dimensions D • • • STA (10-pin)





VCE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)


169


(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –3 A

ICP –6 (PW≤10ms, Du≤50%) A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO –100 µA VEB=–6V



VCE(sat) –1.0 V IC=–2A, IB=–0.2A



tf 0.25 µs IB1=–IB2=–0.2A


PT W

STA421A

–60 –1 –20

–1

–2

–3

–4

–3

VCE (V)

IC (

A)

–4 –5

IB=–8

0mA

–60mA

–50mA

–40mA

–30mA

–20mA

–10mA

–5mA

–0.01

IC (A)

(VCE=–4V)

–0.1 –1 –4–0.5–0.05

typ

20

100

50

500

hFE

–0.01

IC (A)–0.1 –1 –4–0.5–0.05

20

100

50

500hF

E(VCE=–4V)

Ta=125°C

75°C

25°C

–30°C

–1.0

–0.05IC (A)

–0.1 –0.5 –10

–3

–0.5

VC

E (

sat)

, VB

E (

sat)

(V

)

VBE (sat)

VCE (sat)

(IC / IB=10)

–0.01

IB (A)–0.1 –1–0.5–0.05

0

–1.0

–0.5

–1.5

VC

E (

sat)

IC=–3A

–2A

–1A

0

VBE (V)–0.5

(VCE=–4V)

–1.5–1.00

–2

–3

–1

–4

IC (

A)

Ta=1

25°C

75°C

25°C

–30°

C

1

PW (mS)5 10005001005010

5

1.0

10

0.5

20

θj–

a (

°C /

W)

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

–3 –5

VCE (V)–10 –50 –100

–1

–5

–0.05

–0.1

–0.5

–10

IC (

A)

1ms10ms


2 89

101

67

453

PNP

General purpose







170


(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 3 –3 A


PT4 (Ta=25°C)

W20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

STA431ARatings

NPN PNP

00

1

2

4

3

1 2 3

VCE (V)

IC (

A)

54 6

IB=70mA 60mA

50mA

40mA

30mA

20mA

10mA

5mA

0.01

IC (A)0.1 1 40.50.05

20

100

50

500

hFE

(VCE=4V)

typ

0

VBE (V)0.5 1.51.0

0

2

3

1

4

IC (

A)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

0 –1 –20

–1

–2

–3

–4

–3

VCE (V)

IC (

A)

–4 –5 –6

IB=–8

0mA

–60mA

–50mA

–40mA

–30mA

–20mA

–10mA

–5mA

–0.01

IC (A)–0.1

typ

–1 –4–0.5–0.0520

100

50

500

hFE

(VCE=–4V)

0

VBE (V)–0.5 –1.5–1.0

0

–2

–3

–1

–4

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C

6

10

7 9

8

3 5

2 4

1

PNP + NPN

H-bridge

0.01

IC (A)0.1 10.5 40.05

20

100

50

500

hFE

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

–0.01

IC (A)0.1 –1 –4–0.5–0.05

20

100

50

500

hFE

(VCE=–4V)

Ta=125°C

75°C

25°C

–30°C




NPN PNP NPN

NPN PNP PNP

NPN PNP




171


(Ta=25°C)

NPN PNP





IEBO 100 µA VEB=6V –100 µA VEB=–6V






tf 0.3 µs IB1=–IB2=0.2A 0.25 µs IB1=–IB2=–0.2A

0.005

IB (A)0.1 10.50.050.01

0

1.0

0.5

1.5

VC

E (

sat)

(V

)

IC=3A

2A

1A

5

VCE (V)10 50 100

1

5

0.05

0.1

0.5

10

IC (

A)

3

1ms

10ms


1

PW (mS)5 10005001005010

5

1.0

10

0.5

20θ

j–a

(°C

/ W

)

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

–0.005

IB (A)–0.1 –1–0.5–0.05–0.01

0

–1.0

–0.5

–1.5

VC

E (

sat)

(V

) IC=3A

2A

1A

–5

VCE (V)–10 –50 –100

–1

–5

–0.05

–0.1

–0.5

–10

IC (

A)

–3

1ms10ms


1.0

0.05

IC (A)

0.5

00.1 0.5 1

VC

E (

sat)

• V

BE (

sat)

(V

)

3

VCE (sat)

VBE (sat)

(IC / IB=10)–1.0

–0.05

–0.5

0–0.1 –0.5 –1

VC

E (

sat)

• V

BE (

sat)

(V

)

–3

IC (A)

(IC / IB=10)

VBE (sat)

VCE (sat)

STA431A




NPN PNP

NPN PNP

NPN PNP


VCE(sat), VBE(sat)-IC Characteristics (Typical)


172

NPN PNP NPN

NPN PNP PNP

NPN PNP





STA434A


32

759

6

R1 R2

1

4

8

10

R3 R4

(Ta=25°C)

Symbol Unit

VCBO 80 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A


PT4 (Ta=25°C)

W20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

RatingsNPN PNP

0 20

2

4

6

VCE (V)

IC (

A)

4 6

IB=4.0mA

2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

0.03 0.10.05

IC (A)40.5 1

30

50

100

10000

5000

500

1000

20000

hFE

typ

(VCE=4V)

20000

10000

5000

1000

500

0.05 0.1 0.5 1 4

hFE

IC (A)

100

50

30

Ta=125°C

(VCE=4V constant)

25°C

–30°C

0

VBE (V)1 2

0

2

3

1

4IC

(A

)(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

IC (

A)

VCE (V)

IB=–

2.3m

A

–1.8mA

–1.5mA

–1.2mA

–1.0mA

–0.8mA

10000

5000

1000

500

100

50

20

(VCE=–4V)

typ

–0.02 –0.05 –0.1 –0.5 –1 –4

hFE

IC (A)

–0.02IC (A)

–0.05 –0.5 –4

hFE

10000

–0.1 –1

5000

1000

500

100

50

20

Ta=125°C

25°C

–30°C

(VCE=4V constant)

–4

–3

–2

–1

00 –1 –2 –3

IC (

A)

VBE (V)

(VCE=–4V)

Ta=

125°

C75

°C25

°C–3

0°C


H-bridge External dimensions D • • • STA (10-pin)



173

NPN PNP

NPN PNP

NPN PNP





STA434A(Ta=25°C)

NPN PNP












0.50.2

IB (mA)10 1005051

0

2

1

3

VC

E (

sat)

(V

) IC=4A

3A

2A

1A

1

PW (mS)5 10005001005010

5

1.0

10

0.5

20θ

j–a

(°C

/ W

)

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



Without Heatsink

100×100×2

25×50×2

–10

–3VCE (V)

–10 –50

IC (

A)

–5

–1

–0.5

–0.1–100–5

1ms

10ms


–3

–2

–1

0–0.5 –0.1 –5 –10 –50

IC=–4A

IC=–2AIC=–1A

IB (mA)

VC

E (

sat)

(V

)

–10

–3VCE (V)

–10 –50

IC (

A)

–5

–1

–0.5

–0.1

–100–5–0.07

1ms10m

s


2.0

IC (A)

1.0

00.1 0.5 1

VC

E (

sat)

(V

)

4

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000) –2

–0.5 IC (A)

–1

0–1

VC

E (

sat)

(V

)

–4

Ta=–30°C

125°C25°C

(IC / IB=1000)



θj-a-PW Characteristics

174





(Ta=25°C)

Symbol Ratings Unit

VCBO 65±15 V

VCEO 65±15 V

VEBO 6 V

IC 4 A


4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 10 mA VEB=6V

VCEO 50 65 80 V IC=10mA




tstg 4.0 µs IC=3A,



PT W

STA435A

5

4

3

2

1

00 1 2 3 4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

IB=2.0mA

VCE (V)

IC (

A)

20000

0.05 0.1 1 4

IC (A)

10000

5000

1000

500

100

500.5

hF

E

(VCE=4V)

typ

20000

10000

5000

1000

500

0.05 0.1 0.5 1 4

hFE

IC (A)

100

(VCE=4V)

25°C

–30°CTa=

125°C

2

IC (A)

1

00.1 0.5 1

VC

E (

sat)

(V

)

4

125˚C

Ta=–30°C25˚C

(IC / IB=1000)3

2

1

00.2 0.5 1 5 10 50 100

VC

E (

sat)

(V

)

IB (mA)

IC=4A3A

2A

1A

30

10

5

1.0

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (ms)

5

1

0.5

0.1

0.053 5 10 50 100

VCE (V)

IC

(A)

100µs1ms

10ms


32

1 R1 R2

54

76

10

98


NPN Darlington


0 1VBE (V)

2

3

4

2

1

0

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C

–40 0 40 50 80 120100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



Without Heatsink

100×100×2

50×50×2

25×50×2




176

NPN PNP NPN

NPN PNP PNP

NPN PNP





STA457C


3

1

2

R1 R2

5

4

7

6

9

10

8

R3 R4

(Ta=25°C)

Symbol Unit

VCBO 60 –60 V

VCEO 60 –60 V

VEBO 6 –6 V

IC 4 –4 A


PT4 (Ta=25°C)

W20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

RatingsNPN PNP

0 20

2

4

6

VCE (V)

IC (

A)

4 6

IB=4.0mA

2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

0.03 0.10.05

IC (A)40.5 1

30

50

100

10000

5000

500

1000

20000

hFE

typ

(VCE=4V)

20000

10000

5000

1000

500

0.05 0.1 0.5 1 4

hF

E

IC (A)

100

Ta=125°C

25°C

–30°C

(VCE=4V)

0

VBE (V)1 2

0

2

3

1

4

IC (

A)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

–6

–5

–4

–3

–2

–1

00 –1 –2 –3 –4 –5 –6

IC (

A)

VCE (V)

IB=–2

.3m

A

–1.8mA

–1.5mA

–1.2mA

–1.0mA

–0.8mA

10000

5000

1000

500

100

50

20

(VCE=–4V)

typ

–0.02 –0.05 –0.1 –0.5 –1 –4

hFE

IC (A)

–0.02 IC (A)

–0.05 –0.5 –4

hFE

10000

–0.1 –1

5000

1000

500

100

50

20

Ta=125°C

25°C

–30°C

(VCE=4V)

–4

–3

–2

–1

00 –1 –2 –3

IC (

A)

VBE (V)

(VCE=–4V)

Ta=

125°

C

75°C

25°C

–30°

C





177

NPN PNP

NPN PNP

NPN PNP





STA457C(Ta=25°C)

NPN PNP








VCE(sat) 1.5 VIC=2A, IB=4mA

–1.5 VIC=–2A, IB=–4mA

VBE(sat) 2.0 V –2.0 V

VFEC 1.6 V IFEC=2A –1.6 V IFEC=–2A

0.50.2

IB (mA)10 1005051

0

2

1

3

VC

E (

sat)

(V

)

IC=4A

3A2A

1A

1

PW (mS)5 10005001005010

5

1.0

10

0.5

20θj

–a (

°C /

W)

–10

–3 VCE (V)

–10 –50

IC (

A)

–5

–1

–0.5

–0.1–100–5

1ms

10ms


–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

–3

–2

–1

0–0.5 –0.1 –5 –10 –50

IC=–4A

IC=–2A

IC=–1A

IB (mA)

VC

E (

sat)

(V

)

–10

–3

VCE (V)–10 –50

IC (

A)

–5

–1

–0.5

–0.1–100–5

1ms10m

s


2.0

IC (A)

1.0

00.1 0.5 1

VC

E (

sat)

(V

)

4

125°C

75°C25°C

Ta=–30°C

(IC / IB=1000)–2

–0.5 IC (A)

–1

0–1

VC

E (

sat)

(V

)

–4

25°C

125°C

Ta=–30°C

(IC / IB=1000)




178

NPN PNP NPN

NPN PNP PNP

NPN PNP





STA458C(Ta=25°C)

Symbol Unit

VCBO 50 –50 V

VCEO 30 –30 V

VEBO 6 –6 V

IC 5 –5 A

ICP 10(PW≤10ms, Du≤50%) –10(PW≤10ms, Du≤50%) A

IB 1 –1 A

PT4 (Ta=25°C)

W20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +50 °C

TFSM 20 (Single half-cycle sinewave) A

RatingsNPN PNP

00

2.0

4.0

8.0

6.0

1.0 3.02.0

VCE (V)

IC (

A)

IB=15

0mA

90mA

70mA

50mA

30mA

10mA

0.02

IC (A)1 1050.50.10.5

20

100

50

500

hFE

(VCE=1V)

typ

0.05

IC (A)0.5 1 1050.1

20

100

50

500

hFE

(VCE=1V)

75°C

25°C

–40°C

Ta=150°C

0

VBE (V)1.00.5 1.5

0

5.0

10.0IC

(A

)(VCE=1V)

Ta=15

0°C

75°C

–40°

C

25°C

00

–2.0

–4.0

–8.0

–6.0

–1.0 –3.0–2.0

VCE (V)

IC (

A)

IB=–

150m

A

–90mA

–70mA

–50mA

–30mA

–10mA

–0.02 –0.05

IC (A)–5 –10–1–0.5–0.1

20

100

50

500

hFE

(VCE=–1V)

typ

(VCE=–1V)

–0.05

IC (A)–0.5 –10–5–1–0.1

20

100

50

500

hFE

Ta=150°C

75°C

25°C

–40°C

0

VBE (V)–0.5 –1.0 –1.5

0

–10.0

–5.0

IC (

A)

(VCE=–1V)

Ta=1

50°C

75°C

25°C

–40°

C

R: 600Ω Typ

1R

43

2 7

86

9

105

PNP+NPN




179

NPN PNP

NPN PNP

NPN PNP





STA458C(Ta=25°C)

NPN PNP







hFE70 VCE=1V, IC=1A 70 VCE=–1V, IC=–1A

40 VCE=1V, IC=4A 40 VCE=–1V, IC=–4A





trr 2.0 µs IF=IR=100mA 2.0 µs IF=IR=100mA

0.005

IB (A)0.05 10.50.10.001

0

1

2

VC

E (

sat)

IC=5A

3A

2A

1A

1

PW (mS)5 10005001005010

5

1.0

10

0.5

20θj

–a (

°C /

W)

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

5

VCE (V)10 30 50

5

0.2

1

0.5

10

IC (

A)

2

1mS

ec

10mS

ec


–0.005

IB (A)–0.1 –1–0.5–0.05–0.01

0

–1

–2

VC

E (

sat)

(V

)

IC=–5A

–3A–2A–1A

–5

VCE (V)–10 –30 –50

–1

–5

–0.2

–0.5

–10

IC (

A)

–2

1mS

ec

10mS

ec


0.02

IC (A)10.5 201050.10.05

0

1.0

0.5

1.5

VC

E (

sat)

(V

)

(IC / IB=20)

Ta=150°C

75°C

25°C

–40°C

–0.02

IC (A)–1–0.5 –20–10–5–0.1–0.05

0

–1.0

–0.5

–1.5

VC

E (

sat)

(V

)

(IC / IB=20)

Ta=150°C

75°C

25°C

–40°C




180




(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC ±6 A

ICP ±10 (PW≤1ms, Du≤50%) A

3.2 (Ta=25°C)

18 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)

Symbol Ratings Unit

ICBO 10 µA VCB=50V

IEBO 10 µA VEB=6V

VCEO 50 60 70 V IC=50mA

hFE 700 1500 3000 VCE=1V, IC=1A

VCE(sat) 0.09 0.15 V IC=1.5A, IB=15mA


ES/B 200 mJ L=10mH, Single pulse


PT W

STA460C

3

2

4

8

7

9

VCE (V)

IC (

A)

1 2 3 4 50

20mA

10mA

5mA

3mA

1mA

IB=3

0mA

1

0

2

3

4

5

6

9

10

7

8

(VCE=1V)

IC (A)

5000

1000

500

100

50

300.01 0.05 0.1 0.5 1 5 10

typ

hFE

(VCE=1V)

IC (A)

hFE

5000

1000

500

100

50

300.01 0.05 0.1 0.5 1 5 10

Ta=125°C

–55°C

25°C75°C

(IC / IB=100)

IC (A)

VC

E (

sat)

(V

)

0.75

0.5

0.25

00.01 0.05 0.1 0.5 1 5 10

Ta=–55˚C25˚C75˚C

125˚C

IB (mA)

VC

E (

sat)

(V

)

0.75

0.5

0.25

01 5 10 50 100 500

IC=3A

1.5A0.5A

(VCE=1V)

VBE (V)

IC (

A)

6

4

00 0.5 1.0 1.5

5

3

2

1

–55°

C

25°C75°C

Ta=

125°

C

PW (mS)0.5 1000 200050010 1005051

0.5

1

0.1

5

0.05

20

10

θj–

a (

°C /

W)

0.1 –55

Ta (°C)0 50 150100

0

20

15

10

5

PT (

W)

With Silicone GreaseNatural Cooling

With Infinite H

eatsink

Without Heatsink

VCE (V)

20

5

0.050.5 1 10 50

10

1

0.5

0.1

IC (

A)

5 100

0.5ms1m

s

10ms


NPN Darlington





181




(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 2 A


IB 0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=50V

IEBO 5 mA VEB=6V

VCEO 50 60 70 V IC=10mA

hFE 2000 5000 10000 VCE=4V, IC=1A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.8 2.2 V



tstg 4.0 µs IC=1A,




PT W

STA471A

IC=1A, IB=2mA


2

1

3

R1 R2

45

67

89

10


0

1

2

3

4

IC (

A)

0 1 2 3

VCE (V)54 6

0.3mA

0.4mA

0.6mA

2.0mA5.0mA

1.0mA

IB=10.0mA

0.02

IC (A)0.10.05 10.5 4

30

50

1000

100

500

10000

5000

hFE

(VCE=4V)

Typ

(VCE=4V)

0.02 0.05 0.1 0.5 1 4

IC (A)

10000

5000

1000

500

100

50

30

hF

E

Ta=125°C

75°C

–30°C25°C

(IC / IB=1000)3

2

00.2 0.5 1

IC (A)

VC

E (

sat)

(V

)

1

3

75°C

25°C

–30°

C

Ta=

125°

C

0.1

IB (mA)310.5

0

1

3

2

VC

E (

sat)

(V

)

(IC=1A)

Ta=

125°

C

–30°

C

75°C

25°C

VBE (V)0

0

3

2

1

4

IC (

A)

(VCE=4V)

Ta=1

25°C

75°C

25°C –30°

C

321

5

1

0.5

0.1

0.053 5 10 50 100

VCE (V)

IC (

A)


100µs

1ms

10ms

–40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

PW (mS)0.5 100 1000500501051

5

1

0.5

10

30

θj–

a (

°C /

W)

0.2

NPN Darlington





182


(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –2 A


IB –0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)





hFE 2000 4000 10000 VCE=–4V, IC=–1A

VCE(sat) –1.2 –1.5 V

VBE(sat) –1.9 –2.2 V

VFEC –1.3 –1.8 V IFEC=–1A







PT W

STA472A

IC=–1A, IB=–2mA


1 R1 R2

23

45

67

89

10

00

–1

–2

–4

–3

–1 –2 –3

VCE (V)

IC (

A)

–5–4 –6

IB=–

10.0

mA

–5.0mA

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–0.02

IC (A)–0.1–0.05 –1–0.5 –4

50

1000

100

500

10000

5000

hFE

(VCE=–4V)

typ

(VCE=–4V)10000

5000

1000

500

100

50–0.02 –0.05 –0.1 –0.5 –1 –4

IC (A)

hFE

–30°C

Ta=125°C

75°C

25°C

(IC / IB=1000)–3

–2

0–0.2 –0.5 –1

IC (A)

VC

E (

sat)

(V

)

–1

–4

75°C 25°C

Ta=–30°C

125°C

–0.1

IB (mA)–5–1–0.5

0

–1

–3

–2

VC

E (

sat)

(V

)

(IC=–1A)

Ta=125°C

75°C25°C

–30°C

0

VBE (V)–2–1 –3

0

–3

–2

–1

–4

IC (

A)

(VCE=–4V)

Ta=12

5°C

75°C

25°C

–30°

C

PW (mS)0.5 100 1000500501051

5

0.5

1

10

20

θj–

a (

°C /

W)

0.2 –40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)

24



100×100×2

50×50×2

25×50×2

Without Heatsink

–5

–1

–0.5

–0.1

–0.05

–0.03–3 –5 –10 –50 –100

VCE (V)

IC (

A)

100µs

1ms10m

s


PNP Darlington







183


(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 2 A


IB 0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 5 mA VEB=6V

VCEO 100 V IC=10mA

hFE 2000 5000 12000 VCE=4V, IC=1A

VCE(sat) 1.1 1.5 V

VBE(sat) 1.8 2.2 V



tstg 4.5 µs IC=1A,




PT W

STA473A

IC=1A, IB=2mA


00

1

2

4

3

1 2 3

VCE (V)

IC (

A)

54 6

IB-10.0mA

4.0mA

2.0mA1.2mA

0.6mA

0.4mA

0.3mA

0.02

IC (A)

(VCE=4V)

0.10.05 10.5 430

50

1000

100

500

20000

10000

5000

hFE

typ

(VCE=4V)20000

10000

5000

1000

500

100

50

300.02 0.05 0.1 0.5 1 4

IC (A)

hFE

–30°C

Ta=125°C

75°C25°C

(IC / IB=1000)3

2

00.2 0.5 1

IC (A)

VC

E (

sat)

(V

)

1

4

75°C

25°C

–30°

C

Ta=

125°

C

0.1

IB (mA)510.5

0

2

1

3

VC

E (

sat)

(V

)

(IC=1A)

Ta=125°C

75°C

25°C

–30°C

0

VBE (V)21 3

0

3

2

1

4

IC (

A)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

PW (mS)0.5 100 1000500501051

5

1

0.5

10

20

θj–

a (

°C /

W)

0.2 –40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

5

1

0.5

0.1

0.05

0.033 5 10 50 100

VCE (V)

IC (

A)

100µs

1ms10ms

200


2

1

3

R1 R2

45

67

89

10

R1: 4kΩ Typ R2: 150Ω Typ

NPN Darlington







184


(Ta=25°C)

Symbol Ratings Unit

VCBO 100±15 V

VCEO 100±15 V

VEBO 6 V

IC 2 A


IB 0.5 A

4 (Ta=25°C)

20 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=85V

IEBO 5 mA VEB=6V

VCEO 85 100 115 V IC=10mA

hFE 2000 5000 12000 VCE=4V, IC=1A

VCE(sat) 1.5 V

VBE(sat) 2.2 V

VFEC 1.8 V IFEC=1A


tstg 3.0 µs IC=1A,


PT W

STA475A

IC=1A, IB=2mA



2

1

3

R1 R2

45

67

89

10

10 2 4 5 6

VCE (V)3

4

IC (

A)

1

0

2

3

0.2mA

0.3mA

0.5mA

1mA

2mA5mA

IB=1

0mA

(VCE=4V)

0.03

IC (A)0.1 0.5 1 40.05

20000

10000

5000

1000

500

100

50

hFE

Ta=125°C

–30°C

75°C

25°C

VC

E (

sat) (

V)

(IC / IB=1000)

0.3IC (A)

0.5 1 40

1

2

3

125˚C

75°C25°C

Ta=–30°C

0.1

IB (mA)

VC

E (

sat)

(V

)

0

1

2

3

0.5 1 5 10 50 100

IC=4A

IC=2A

IC=1A

4

IC (

A)

0 1 2 3

VBE (V)

1

2

3

(VCE=4V)

0

–30°

C

25°C

75°C

Ta=1

25°C

PW (mS)10050 10005005 10

5

1

10

20

θj–

a (

°C /

W)

1 –40 0 50 100 150

20

16

12

8.0

4.0

0

PT (

W)

Ta (°C)



100×100×2

50×50×2

25×50×2

Without Heatsink

NPN Darlington


5

IC (

A)

30.03

5 10

VCE (V)

1

0.5

0.1

0.05

50 100 200


10ms

100µs1ms

50µs

20000

10000

5000

1000

500

100

0.03

IC (A)

hFE

500.1 0.5 1 40.05

Typ

(VCE=4V)








185


(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 1 A

ICP 2.5 (PW≤1ms, Du≤25%) A

IB 0.5 A

4 (Ta=25°C)

16 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=50V

IEBO 3 mA VEB=6V

VCEO 50 60 70 V IC=1mA

hFE 2000 5000 10000 VCE=4V, IC=0.5A

VCE(sat) 1.0 1.5 V

VBE(sat) 1.6 2.2 V

VFEC 1.4 1.8 V IFEC=0.5A







PT W

STA481A

IC=0.5A, IB=1mA


2

1

3

R1 R2

45

67

89

10

2.5

IC (

A)

VCE (V)0 1 2 3

2

1.5

1

0.5

4 5 60

IB=5

0mA

10m

A 5mA

2mA

1mA

0.5mA

0.3mA

10000

hFE

IC (A)0.01 0.1 1 2.5

1000

100

30

typ

(VCE=4V)10000

hFE

IC (A)0.01 0.1 1

(VCE=4V)

1000

100

302.5

125°C

75°C

25°C

–30°C

3

2

1

00.01 0.1 1 5

(IB=2mA)

IC (A)

VC

E (

sat)

(V

)

125°C75°C

25°C –30°C

3

2

1

00.05 0.1 1 10010

(IC=0.5A)

IB (mA)

VC

E (

sat)

(V

)

125°C75°C

25°C –30°C

2.5

IC (

A)

VBE (V)0 1 2 3

(VCE=4V)

2

1.5

1

0.5

0

125°

C75

°C25

°C–3

0°C

PW (mS)100010 100

1

10

5

30

θj–

a (

°C /

W)

1

20

PT (

W)

Ta (°C)–40 0 50 150

15

10

5

0100

With Silicone GreaseNatural CoolingHeatsink: Aluminum


Without Heatsink

5

IC (

A)

VCE (V)1 10 100

1

0.1

0.01

100µS

1mS

10mS


NPN Darlington









186


(Ta=25°C)

Symbol Ratings Unit

VCBO 100±15 V

VCEO 100±15 V

VEBO 6 V

IC 1 A

ICP 2.5 (PW≤1ms, Du≤25%) A

IB 0.5 A

4 (Ta=25°C)

16 (Tc=25°C)

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)

ymbol Unit Conditions

ICBO 10 µA VCB=85V

IEBO 3 mA VEB=6V

VCEO 85 100 115 V IC=1mA

hFE 2000 5000 10000 VCE=4V, IC=0.5A

VCE(sat) 1.0 1.5 V

VBE(sat) 1.6 2.2 V

VFEC 1.4 1.8 V IFEC=0.5A





Cob 14 pF VCE=10V, f=1MHz

PT W

STA485A

IC=0.5A, IB=1mA



2

1

3

R1 R2

45

67

89

10

2.5

IC (

A)

VCE (V)0 1 2 3

2

1.5

1

0.5

4 5 60

IB=5

mA 2mA

1mA

0.5mA

0.3mA

0.2mA

10000

hFE

IC (A)0.01 0.1 1 2.5

(VCE=4V)

1000

5000

100

500

20

50

typ

20000

10000

hFE

IC (A)0.01 0.1 1 2.5

(VCE=4V)

1000

100

30

125°C

75°C

25°C

–30°C

3

2

1

00.01 0.1 1 5

(IB=2mA)

IC (A)

VC

E (

sat)

(V

)

125°C

75°C

25°C –30°C

3

2

1

00.05 0.1 1 10010

(IC=0.5A)

IB (mA)

VC

E (

sat)

(V

)

125°C

75°C

25°C

–30°C

2.5

IC (

A)

VBE (V)0 1 2 3

(VCE=4V)

2

1.5

1

0.5

0

125°

C75

°C25

°C–3

0°C

PW (mS)100050010050105

2

10

5

30

θj–

a (

°C /

W)

1

5

IC (

A)

VCE (V)1 10 200

1

0.1

0.01

100µS

1mS

10mS

100


20

PT (

W)

Ta (°C)–40 0 50 150

15

10

5

0100



Without Heatsink

NPN Darlington








187


STA501A(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±10 V

ID ±5 A

ID(pulse) ±20 (PW≤100µs, Du≤1%) A

4 (Ta=25°C) W

20 (Tc=25°C) W

Tch 150 °C

Tstg –40 to +150 °C

PT

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 2.0 S VDS=10V, ID=2.5A

0.15 0.20 Ω VGS=10V, ID=2.5A

0.23 0.28 Ω VGS=4V, ID=2.5A



Crss 35 pF VGS=0V


tr 25 ns VDD 30V,

td(off) 40 ns RL=12Ω,

tf 20 ns VGS=5V, see Fig. 3 on page 16.




RDS(ON)

2

3

1

4

5

6

7

8

9

10

N-channel





188


STA504A(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±20 V

ID ±4 A


4 (Ta=25°C) W

20 (Tc=25°C) W

Tch 150 °C

Tstg –40 to +150 °C

PT

(Ta=25°C)





VTH 2.0 4.0 V VDS=10V, ID=250µA


RDS(ON) 0.33 0.45 Ω VGS=10V, ID=2A



Crss 14 pF VGS=0V




2

3

1

4

5

6

7

8

9

10

N-channel





189


STA505A(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±3 A


4 (Ta=25°C) W

20 (Tc=25°C) W

Tch 150 °C

Tstg –40 to +150 °C

PT

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 2.0 3.0 S VDS=10V, ID=1.5A

RDS(ON)0.35 0.50 Ω VGS=10V, ID=1.5A

0.40 0.60 Ω VGS=4V, ID=1.5A



Crss 12 pF VGS=0V




2

3

1

4

5

6

7

8

9

10

N-channel

General purpose





190


STA506A(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±2 A


EAS* 5.6 mJ

4 (Ta=25°C) W

20 (Tc=25°C) W

Tch 150 °C

Tstg –40 to +150 °C

* : VDD=25V, L=2.2mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.

PT

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.55 0.80 Ω VGS=10V, ID=1A

0.70 0.95 Ω VGS=4V, ID=1A



Crss 9 pF VGS=0V

td(on) 15 ns ID=1A,

tr 30 ns VDD 50V,

td(off) 40 ns RL=50Ω,

tf 30 ns VGS=5V, see Fig. 3 on page 16.




RDS(ON)

5 7 9

2 4

3

6 8

1 10

5 7 9

2 4

3

6 8

1 10

0 10

1

0

VDS (V)

ID (

A)

5

4

2

3

2 4 6 8

4V

10V

VGS=3V

3.5V

5V

0

5

4

3

2

1

(VDS=10V)

25°C

125°C

0 2 64

TC=–40°C

VGS (V)

ID (

A)

VGS=10V

VGS=4V

00

4 5

0.2

0.6

0.4

0.8

ID (A)

RD

S (

ON

) (Ω

)

1 2 3

0.050.3

0.5

0.1 0.5 1

1

ID (A)

Re

(yf

s) (

S)

5

5

TC=–40°C

(VDS=10V)

25°C

125°C

–400

0 50 100 150

1.0

0.5

1.5

RD

S (

ON

) (Ω

)

TC (°C)

(ID=1A)

VGS=10V

VGS=4V

0 10 20 30 40 505

10

50

500

100

VDS (V)

Cap

acita

nce

(pF

)

VGS=0Vf=1MHz

Ciss

Crss

Coss

00 0.5 1.0 1.5

5

4

3

IDR (

A)

VSD (V)

2

1

10V

4V

VGS=0V

0.5 1 5 10 50 1000.1

0.5

1

5

10

I

(A)

D

V (V)DS

DI (pulse) max

1ms10m

s (1shot)DS

(ON)

R

LIM

ITED

100µs

25

30

20

15

10

5

0


0 50 100 150

Ta (°C)

PT (

W)


Without Heatsink

N-channel






IDR-VSD Characteristics (Typical) PT-Ta Characteristics Safe Operating Area (SOA)

191




SDA01(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –1.5 A

ICP –2.5 (PW≤1ms, Du≤10%) A

IB –0.1 A

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

(Ta=25°C)





hFE 2000 12000 VCE=–4V, IC=–1A

VCE(sat) –1.4 V

VBE(sat) –2.2 V


IC=–1A, IB=–2mA

2 4 6 8

1

15,16 13,14 11,12 9,10

3 5 7

R1 R2

–6–5–4–3–2–100

–0.5

–2.5

–2.0

–1.5

–1.0

VCE (V)

IC (

A)

IB=–5mA

–2mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

10000(VCE=–4V)

5000

1000

500

100

50–0.03 –0.05 –0.1 –0.5 –1 –2.5

IC (A)

hFE

typ

10000(VCE=–4V)

5000

1000

500

100

50–0.03 –0.1 –0.5 –1 –2.5

IC (A)

hFE

–0.05

Ta=125°C

75°C

25°C

–30°C

–3

–2

–1

0

IC (A)

(IC / IB=1000)

VC

E (

sat)

(V

)

–0.2 –0.5 –1 –2.5

Ta=125°C

75°C

25°C

–30°C

–3

–2

–1

0–0.1 –0.5 –1 –5 –10 –50

VC

E (

sat)

(V

)

IB (mA)

IC=–2A

IC=–1A

IC=–0.5A

–2.5

–2.0

–1.5

–1.0

–0.5

00 –1 –2 –3

VBE (V)

IC (

A)

(VCE=–4V)

Ta=1

25°C

75°C

25°C

–30°

C

50

10

5

11 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

3

2

1

00

4

3

2

1

50 100 150

1-1 Chip Operation2-2 Chip Operation3-3 Chip Operation4-4 Chip Operation

PT (

W)

Ta (°C)

–5

–1

–0.5

–0.1

–0.05–3 –5 –10 –50 –100

VCE (V)

IC (

A)


100µs

1ms10m

s

PNP Darlington

General purpose



External dimensions E • • • SD



192

SDA05(Ta=25°C)

Symbol Ratings Unit

VCBO –60 V

VCEO –60 V

VEBO –6 V

IC –4 A


IB –0.5 A

PT 2.6 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)





hFE 2000 12000 VCE=–4V, IC=–3A

VCE(sat) –1.5 V

VBE(sat) –2.0 V

VFEC 1.8 V IFEC=1A




fT 200 MHz VCE=–12V, IE=0.2A



IC=–3A, IB=–6mA

R1: 2kΩ typ R2: 150Ω typ *Pins 5, 6, 11, 12 : NC

2

15,16

1

R1 R2

4

13,14

3

8

9,10

7

–6

–4

–2

0

0 –2 –4 –6

IC (

A)

VCE (V)

IB=–

2.2m

A –1.8mA–1.5mA

–1.2mA

–1.0mA

–0.9mA

–0.8mA

–0.03

(VCE=–4V)

hFE

IC (A)

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

typ

–0.03

(VCE=–4V)hF

E

IC (A)

10000

5000

1000

500

100

50–0.05 –0.1 –0.5 –1 –5 –6

Ta=125°C

–30°C

75°C

25°C

–3

–0.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

–2

–1

0–1 –5 –6

125°C

25°C

75°C

Ta=–30°C

–3

–0.3

VC

E (

sat)

(V

)

IB (mA)

–2

–1

0–0.5 –1 –5 –10 –50 –100 –200

IC=–4A

IC=–2AIC=–1A

–6

00

IC (

A)

VBE (V)

–5

–4

–3

–2

–1

–1 –2 –3

–30°

C

(VCE=–4V)

75°C

25°C

Ta=

125°

C

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

3

2

3

2

1

1

00 50 100 150

PT (

W)

Ta (°C)

1-1 Chip Operation2-2 Chip Operation3-3 Chip Operation

–10

–3

IC (

A)

–5

–1

–0.5

–0.1

–0.05

–0.03–5 –10 –50 –100


1ms

10ms

VCE (V)

PNP Darlington

3-phase motor drive External dimensions E • • • SD






193

SDC01(Ta=25°C)

Symbol Ratings Unit

VCBO 80 V

VCEO 50 V

VEBO 6 V

IC 2 A


IB 0.5 A

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

(Ta=25°C)


ICBO 10 µA VCB=80V

ICES 100 µA VCES=50V

IEBO 10 µA VEB=6V

VCEO 50 V IC=10mA

hFE 500 2000 VCE=4V, IC=0.5A

VCE(sat) 0.4 V

VBE(sat) 1.1 V


IC=0.5A, IB=5mA


1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

010 2 3 4 5 6

VCE (V)

IC (

A)

IB=100mA

30m

A

10m

A

5mA

3mA

2mA

1mA

2000

1000

500

100

500.01 0.1 1 3

IC (A)

(VCE=4V)

hFE

2000

1000

500

100

500.01 0.1 1 3

(VCE=4V)hF

E

IC (A)

Ta=125°C75°C

25°C

–30°C

1.5

1.0

0.5

00.05 0.1 0.5 1

IC (A)

VC

E (

sat)

(V

)

(IC / IB=500)

Ta=125°C

75°C

25°C

–30°C

(IC=0.5A)1.5

1.0

0.5

00.5 1 10 100

VC

E (

sat)

(V

)

IB (mA)

Ta=125°C

75°C

25°C

–30°C

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 0.5 1.0 1.5

VBE (V)

(VCE=4V)

IC (

A)

Ta=

125°

C75

°C25

°C–3

0°C

50

10

1

0.50.1 1 10 100 1000

θj–

a (

°C /

W)

PW (mS)

3

2

1

00

4

3

2

1

50 100 150


PT (

W)

Ta (°C)

5

1

0.1

0.05100101

VCE (V)

IC (

A)


100µs

1ms

10ms

9,1011,1213,1415,16

8642

1 3 5 7

NPN

General purpose External dimensions E • • • SD






194




SDC03(Ta=25°C)

Symbol Ratings Unit

VCBO 60±10 V

VCEO 60±10 V

VEBO 6 V

IC 1.5 A

ICP 2.5 (PW≤1ms, Du≤10%) A

IB 0.1 A

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

(Ta=25°C)


ICBO 10 µA VCB=50V

IEBO 1.1 3.5 mA VEB=6V

VCEO 50 60 70 V IC=10mA

hFE 2000 5000 12000 VCE=4V, IC=1A

VCE(sat) 1.2 1.4 V

VBE(sat) 1.8 2.2 V



tstg 4.0 µs IC=1A,




IC=1A, IB=2mA


2.5

2.0

1.5

1.0

0.5

00 1 2 3 4 5 6

IC (

A)

VCE (V)

IB=10mA

2mA

1mA

0.6mA

0.4mA

0.3mA

(VCE=4V)10000

5000

1000

500

100

500.03 0.05 0.1 0.5 1 2.5

hFE

IC (A)

typ

10000

5000

1000

500

100

500.03 0.05 0.1 0.5 1 2.5

hFE

IC (A)

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

(IC / IB=1000)3

2

1

00.2 0.5 1 2.5

VC

E (

sat)

(V

)

IC (A)

Ta=125°C

75°C

25°C

–30°C

3

2

1

00.1 0.5 1 5 10 50 100

IB (mA)

VC

E (

sat)

(A

)

IC=2A

1A

0.5A

2.5

2.0

1.5

1.0

0.5

00 1 2 3

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

50

10

5

11000500100501051

θj–

a (

°C /

W)

PW (mS)

3

2

1

00

4

3

2

1

50 100 150


PT (

W)

Ta (°C)

5

1

0.5

0.1

0.053 5 10 50 100

VCE (V)

IC (

A)

100µS

1mS

10mS


2

R1 R2

15,16

1

4

13,14

3

6

11,12

5

8

9,10

7

NPN Darlington







195




SDC04(Ta=25°C)

Symbol Ratings Unit

VCBO 100±15 V

VCEO 100±15 V

VEBO 6 V

IC 1.5 A

ICP 2.5 (PW≤1ms, Du≤10%) A

IB 0.1 A

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

(Ta=25°C)


ICBO 10 µA VCB=85V

IEBO 1 3 mA VEB=6V

VCEO 85 100 115 V IC=10mA

hFE 2000 5000 12000 VCE=4V, IC=1A

VCE(sat) 1.0 1.3 V

VBE(sat) 1.7 2.2 V



tstg 3.0 µs IC=1A,




IC=1A, IB=2mA


2.5

2.0

1.5

1.0

0.5

00 1 2 3 4 5 6

IC (

A)

VCE (V)

IB=5mA

1mA0.5mA

0.3mA

0.2mA

20000

10000

5000

1000

500

100

500.03 0.05 0.1 0.5 1 2.5

(VCE=4V)

typ

hFE

IC (A)

20000

10000

5000

1000

500

100

500.03 0.05 0.1 0.5 1 2.5

hFE

IC (A)

(VCE=4V)

Ta=125°C

75°C

25°C

–30°C

2

1

00.3 0.5 1 2.5

VC

E (

sat)

(V

)

IC (A)

(IC / IB=1000)

Ta=125°C

75°C

25°C–30°C

3

2

1

00.1 0.5 1 5 10 50 100

VC

E (

sat)

(V

)

IB (mA)

IC=4A

IC=2A

IC-1A

2.5

2.0

1.5

1.0

0.5

00 1 2 3

VBE (V)

(VCE=4V)

IC (

A)

Ta=1

25°C

75°C

25°C

–30°

C

50

10

5

11 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

3

2

1

00

4

3

2

1

50 100 150


PT (

W)

Ta (°C)

5

1

0.5

0.1

0.05

0.033 5 10 50 100

IC (

A)

VCE (V)


100µs1ms

10ms

2

R1 R2

15,16

1

4

13,14

3

6

11,12

5

8

9,10

7


NPN Darlington

With built-in avalanche diode External dimensions E • • • SD



196




SDC06(Ta=25°C)

Symbol Ratings Unit

VCBO 30 to 45 V

VCEO 30 to 45 V

VEBO 6 V

IC 2 A


IB 30 mA

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

(Ta=25°C)


ICBO 10 µA VCB=30V

IEBO 1.2 2.8 mA VEB=6V

VCEO 30 45 V IC=10mA

hFE 400 700 2000 VCE=4V, IC=0.5A

VCE(sat)0.2 V IC=0.5A, IB=5mA

0.6 V IC=1A, IB=5mA

VFEC 2.0 V IFEC=1A



tf 3.6 µs IB1=5mA, IB2=0A



ES/B 40 mJ L=10mH, Single pulse


RB: 800Ω typ RBE: 2kΩ typ

3

2

1

00 1 2 3 4 5 6

IC (

A)

VCE (V)

IB=30mA

1mA

2mA

3mA

5mA

8mA12m

A

1000

500

1000.03 0.05 0.1 0.5 1 3

typ

(VCE=4V)

IC (A)

hFE

1000

500

1000.03 0.05 0.1 0.5 1 3

IC (A)

(VCE=4V)hF

E

Ta=125°C

75°C

25°C

–30°C

3

2

1

00.2 0.5 1 3

(IC / IB=100)

VC

E (

sat)

(V

)

IC (A)

Ta=1

25°C

75°C

25°C

–30°C

1

01 5 10 30

IB (mA)

VC

E (

sat)

(V

)

IC=1A

IC=0.5A

3

2

1

00

4

3

2

1

50 100 150


PT (

W)

Ta (°C)

5

1

0.5

0.15 10 50

IC (

A)


VCE (V)

1mS

50

10

5

11 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

2

15,16

1RB

RBE

4

13,14

3RB

RBE

6

11,12

5RB

RBE

8

9,10

7RB

RBE

NPN





197




SDC07(Ta=25°C)

Symbol Ratings Unit

VCBO 60 V

VCEO 60 V

VEBO 6 V

IC 4 A


IB 0.5 A

PT 2.6 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)


ICBO 10 µA VCB=60V

IEBO 10 mA VEB=6V

VCEO 60 V IC=10mA

hFE 2000 12000 VCE=4V, IC=3A

VCE(sat) 1.5 V

VBE(sat) 2.0 V

VFEC 1.8 V IFEC=1A


tstg 4.0 µs IC=3A,





IC=3A, IB=6mA

R1: 3kΩ typ R2: 200Ω typ *Pins 5, 6, 11, 12 : NC

6

4

2

00 2 4 6

IC (

A)

VCE (V)

IB=4.0mA2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

20000

0.03

(VCE=4V)

hFE

IC (A)

10000

5000

1000

500

100

500.05 0.1 0.5 1 5 6

Typ

20000

0.03

(VCE=4V)hF

E

IC (A)

10000

5000

1000

500

100

500.05 0.1 0.5 1 5 6

Ta=125°C

75°C

25°C

–30°C

3

0.5 1 5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

2

1

06

Ta=1

25°C

75°C

25°C

–30°

C

3

0.2

VC

E (

sat)

(V

)

IB (mA)

2

1

00.5 1 5 10 50 100 200

IC=4A

IC=1A

IC=2A

6

00

IC (

A)

VBE (V)

5

4

3

2

1

1 2 3

(VCE=4V)

Ta=

125°

C75

°C25

°C–3

0°C

3

2

3

2

1

1

00 50 100 150

PT (

W)

Ta (°C)

1-1 Chip Operation2-2 Chip Operation3-3 Chip Operation

10

3

IC (

A)

VCE (V)

5

1

0.5

0.1

0.05

0.035 10 50 100


1ms10m

s

2

R1 R2

15,16

1

4

13,14

3

8

9,10

7

NPN Darlington

3-phase motor drive

20

10

5

1

0.51 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)




198




SDH02(Ta=25°C)

Symbol Ratings Unit

VCBO 120 V

VCEO 100 V

VEBO 6 V

IC 1.5 A

ICP 2.5 (PW≤1ms, Du≤10%) A

IB 0.2 A

IF 1.5 A

IFSM 2.5 (PW≤0.5ms, Du≤10%) A

VR 120 V

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

(Ta=25°C)



IEBO 3 mA VEB=6V

VCEO 100 V IC=10mA

hFE 2000 6000 12000 VCE=4V, IC=1A

VCE(sat) 1.1 1.3 V

VBE(sat) 1.7 2.2 V


tstg 4.5 µs IC=1A,




IC=1A, IB=2mA

(Ta=25°C)


VR 120 V IR=10µA

VF 1.6 V IF=1A

IR 10 µA VR=120V




2.5

2.0

1.5

1.0

0.5

01 2 3 4 5 6

VCE (V)

IC (

A)

IB=10mA2mA

4mA1.2mA

0.6mA

0.4mA

0.3mA

10000

5000

1000

500

1000.03 0.05 0.1 0.5 1 2.5

hFE

(VCE=4V)

IC (A)

typ

(VCE=4V)10000

5000

1000

500

1000.03 0.05 0.1 0.5 1 2.5

hFE

IC (A)

Ta=12

5°C

75°C

25°C

–30°C

3

2

1

00.2 0.5 1 2.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

Ta=125°C

75°C

25°C–30°C

3

2

1

00.1 0.5 1 5 10 50 100

IC=2A

IC=1A

IC=0.5A

VC

E (

sat)

(V

)

IB (mA)

2.5

2.0

1.5

1.0

0.5

00 1 2 3

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

50

10

5

151 10 100 500 100050

θj–

a (

°C /

W)

PW (mS)

3

2

1

00

4

3

2

1

50 100 150

PT (

W)

Ta (°C)


5

1

0.5

0.1

0.05

0.033 5 10 50 100

VCE (V)

IC (

A)


100µs

1ms

10ms

2

16 15

R1 R2

1

4

14 13

3

6

12 11

5

8

10 9

7

NPN Darlington





Diode for flyback voltage absorption Equivalent circuit diagram


200

NPN PNP NPN

NPN PNP PNP

NPN PNP





SDH03(Ta=25°C)

Symbol Unit

VCBO 100 –60 V

VCEO 100 –60 V

VEBO 6 –6 V

IC 1.5 –1.5 A

ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%) A

IB 0.1 –0.1 A

PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

θ j–a 41.6 °C/W

RatingsNPN PNP

2.5

2.0

1.5

1.0

0.5

01 2 3 4 5 6

VCE (V)

IC (

A)

IB=10mA2mA

4mA1.2mA

0.6mA

0.4mA

0.3mA

2 6

15 16 11 12

13

3 7

4 8

14 9 10

1 5

R3

R1 R2

R4

10000

5000

1000

500

1000.03 0.05 0.1 0.5 1 2.5

hFE

(VCE=4V)

IC (A)

typ

2.5

2.0

1.5

1.0

0.5

00 1 2 3

IC (

A)

VBE (V)

(VCE=4V)

Ta=1

25°C

75°C

25°C

–30°

C

–6–5–4–3–2–100

–0.5

–2.5

–2.0

–1.5

–1.0

VCE (V)

IC (

A)

IB=–

5mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–2m

A

10000(VCE=–4V)

5000

1000

500

100

50

30–0.03 –0.05 –0.1 –0.5 –1 –2.5

IC (A)

hFE

Typ

–2.5

–2.0

–1.5

–1.0

–0.5

00 –1 –2 –3

VBE (V)

IC (

A)

(VCE=–4V)

Ta=125°C75°C25°C

–30°C


H-bridge

R3: 4kΩ typ

R4: 100Ω typ

R1: 4kΩ typ

R2: 200Ω typ

(VCE=4V)10000

5000

1000

500

1000.03 0.05 0.1 0.5 1 2.5

hFE

IC (A)

Ta=12

5°C

75°C

25°C

–30°C

10000(VCE=–4V)

5000

1000

500

100

50–0.03 –0.1 –0.5 –1 –2.5

IC (A)

hFE

–0.05

Ta=125°C

75°C

25°C

–30°C




201

NPN PNP

NPN PNP

NPN PNP





SDH03(Ta=25°C)

NPN PNP







hFE 2000 12000 VCE=4V, IC=1A 2000 12000 VCE=–4V, IC=–1A

VCE(sat) 1.3 VIC=1A, IB=2mA

–1.4 VIC=–1A, IB=–2mA

VBE(sat) 2.2 V –2.2 V

3

2

1

00.1 0.5 1 5 10 50 100

IC=2A

IC=1A

IC=0.5A

VC

E (

sat)

(V

)

IB (mA)

50

10

5

151 10 100 500 100050

θj–

a (

°C /

W)

PW (mS)

5

1

0.5

0.1

0.05

0.033 5 10 50 100

VCE (V)

IC (

A)


100µs

1ms10m

s

3

2

1

00

4

3

2

1

50 100 150

PT (

W)

Ta (°C)


–3

–2

–1

0–0.1 –0.5 –1 –5 –10 –50

VC

E (

sat)

(V

)

IB (mA)

IC=–2A

IC=–1A

IC=–0.5A

–5

–1

–0.5

–0.1

–0.05–3 –5 –10 –50 –100

VCE (V)

IC (

A)

1ms

10ms

100µs


50

10

5

11 5 10 50 100 500 1000

θj–

a (

°C /

W)

PW (mS)

3

2

1

00.2 0.5 1 2.5

(IC / IB=1000)

VC

E (

sat)

(V

)

IC (A)

Ta=125°C

75°C

25°C–30°C

–3

–2

–1

0

IC (A)

(IC / IB=1000)

VC

E (

sat)

(V

)

–0.2 –0.5 –1 –2.5

Ta=–30°C

25°C75°C

125°C



θ j-a-PW CharacteristicsNPN

PNP

202


SDK02(Ta=25°C)

Symbol Ratings Unit

VDSS 60 V

VGSS ±10 V

ID ±2 A


IF 1.5 A

IFSM 2.5 (PW≤0.5ms, Du≤10%) A

VR 120 V

PT 3 (Ta=25°C, 4-circuit operation) W

Tch 150 °C

Tstg –40 to +150 °C

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.19 0.24 Ω VGS=10V, ID=1.0A

0.25 0.30 Ω VGS=4V, ID=1.0A



Crss 35 pF VGS=0V




VR 120 V IR=10µA

VF 1.6 V IF=1A

IR 100 µA VR=120V




RDS(ON)

1

16

2

15

3

14

4

13

5

12

6

11

7

10

8

9

N-channel

With built-in flywheel diode External dimensions E • • • SD




203


SDK04(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V

VGSS ±20 V

ID ±2 A


EAS* 2.7 mJ

PT 3 (Ta=25°C, 4-circuit operation) W

Tch 150 °C

Tstg –40 to +150 °C

* : VDD=25V, L=1mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15.

(Ta=25°C)





VTH 1.0 2.0 V VDS=10V, ID=250µA


0.60 0.80 Ω VGS=10V, ID=1.0A

0.75 0.95 Ω VGS=4V, ID=1.0A



Crss 10 pF VGS=0V


tr 20 ns RL=50Ω,






RDS(ON)

1

15,16

2

3

13,14

4

5

11,12

6

7

9,10

8

N-channel

General purpose External dimensions E • • • SD



1-11-1 Nishi -Ikebukuro,Toshima-ku, TokyoPHONE: 03-3986-6164FAX: 03-3986-8637TELEX: 0272-2323(SANKEN J)

Overseas Sales Offices

Sanken Electric Co., Ltd.

AsiaSanken Electric Singapore Pte.Ltd.150 Beach Road,#14-03 The Gateway West,Singapore 0718PHONE: 291-4755FAX: 297-1744

Sanken Electric Hong Kong Co.,Ltd.1018 Ocean Centre, Canton Road,Kowloon, Hong KongPHONE: 2735-5262FAX: 2735-5494TELEX: 45498 (SANKEN HX)

Sanken Electric Korea Co.,Ltd.SK Life B/D 6F,168 Kongduk-dong, Mapo-ku, Seoul, 121-705, KoreaPHONE: 82-2-714-3700FAX: 82-2-3272-2145

North AmericaAllegro MicroSystems,Inc.115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615, U.S.A.PHONE: (508)853-5000FAX: (508)853-7861

EuropeAllegro MicroSystems Europe Limited.Balfour House, Churchfield Road,Walton-on-Thames, Surrey KT12 2TD, U.K.PHONE: 01932-253355FAX: 01932-246622

PRINTED in JAPAN H1-T07EB0-0103020ND

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