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Transcript of Archie L. Holmes, Jr.taxonomy.engin.umich.edu/wp-content/uploads/2013/02/CV...2013/02/22 · Course...
Archie L. Holmes, Jr.
University of Virginia Phone: 434-924-7770
School of Engineering and Applied Science Fax: 434-924-8818
Department of Electrical and Computer Engineering Email: [email protected]
Thornton Hall, PO Box 400743
Charlottesville, VA 22904-4743
Education
Ph.D., Electrical Engineering, University of California at Santa Barbara, June 1997.
Dissertation: "Improved Performance of 1.55 µm Semiconductor Lasers Using Wafer Fused
Cladding Layers"
Advisor: Dr. Steven P. DenBaars
Co.-Advisor: Dr. John E. Bowers
M.S., Electrical Engineering, University of California at Santa Barbara, December 1992.
B.S., Electrical Engineering (Highest Honors), University of Texas at Austin, May 1991.
Academic Experience
University of Virginia, Electrical and Computer Engineering Department
1/07 to Present Professor
University of Texas at Austin, Electrical and Computer Engineering Department
9/02 – 12/06 Associate Professor
6/97 – 8/02 Assistant Professor
Professional Membership
Institute of Electrical and Electronic Engineers
Laser and Electro-optics Society
Senior Member, 2005 to Present
General Member, 1992 - 2005
American Society for Engineering Education
General Member, 1997 - Present
Advising and Related Student Services
The University of Texas at Austin
Undergraduate Advisor, ECE Department: August 2002 – Fall 2006
Faculty Advisor, Electrical Engineering Honors Society (Eta Kappa Nu), Spring 2000 – Fall 2006
Faculty Mentor, EPS Program, College of Engineering, Fall 1998 – Spring 2003.
Faculty Advisor, Student Engineering Council, Fall 2002 - Fall 2006
Archie Holmes, Jr.
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Administrative and Committee Service
University of Virginia
U.Va. Strategic Planning Steering Committee Member, 2012
Sexual Misconduct Board Member, 2012
Director of the Virginia Center for Translational & Regulatory Sciences (VCTRS) Search Committee
Member - 2012
Executive Vice President & Provost Search Committee Member – 2011
Leadership in Academic Matters Advisory Committee Member – 2011 to Present
Faculty Forum for Scientific Research
Member – 2010 to Present
Executive Director & Associate Vice President for Innovation Partnerships & Commercialization
Search Committee Member – Spring 2010
Public Occasions Subcommittee of the Commencement and Convocations Committee
Member – 2010 to Present
Vice President for Research Search Committee, Member – Spring 2008
University of Virginia, School of Engineering and Applied Sciences
Technology Leaders Program (TLP) Lecturer Search Committee Member – 2012
Common Reading Committee
Co-Chair – Fall 2009 to Present
Member – Fall 2007 to Present
University of Virginia, Charles L. Brown Department of Electrical and
Computer Engineering
Ad-hoc Committee on Graduate Student Culture
Chair: Spring 2008 to Present
Graduate Recruiting Committee
Member: Fall 2007 to Present
Faculty Recruiting Committee
Member: Fall 2007 to Present
Eminent Speaker Committee
Chair: Fall 2008 to Spring 2011
Member : Fall 2007 to Present
Archie Holmes, Jr.
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University of Texas at Austin
Faculty Council, Fall 2002 – Spring 2006
Faculty Council Executive Committee, Fall 2003 – Spring 2006
Educational Policy Committee
Co-Chair, 2003-2004
Chair, 2004 – 2005, 2005-2006 academic years; Fall 2006
CLIPs Faculty Advisory Committee, Fall 2003 – Fall 2006
Technology-Enhanced Learning Committee, Spring 2004 – Fall 2004
Men’s Intercollegiate Athletics Council, Fall 2003 – Fall 2006
Task Force on Curriculum Reform, 2005-2006
Chair, Outcomes and Core Curriculum Sub-committee
Member, Final Report Drafting Committee
University of Texas at Austin, College of Engineering
ECE Chair Review Committee Member, 2005-2006
Engineering Honors Committee, Fall 2002 – Fall 2006
Advising, Admission, and Retention Committee, Fall 2002 – Fall 2006
Equal Opportunity in Engineering Committee, Fall 1997-Summer 2003
MS&E Executive Committee Member, Fall 2000 – Fall 2006
University of Texas at Austin, Department of Electrical and Computer
Engineering
Undergraduate Academic Advising
Director, Fall 2002 – Fall 2006
Appeals Committee Member: Fall 1998-Summer 2002
Appeals Committee Chair: Fall 2002 – Fall 2006
Curriculum & Quality Committee Member: Fall 2002 – Fall 2004
Minority Liaison Officer: Fall 1999-Fall 2006
Chairman Search Committee Member: Spring 2001
Faculty Metric Committee: Member, 2002
Solid-State Electronics Graduate Advisor: Spring 2000 – Fall 2001
Solid-State Electronics Graduate Admissions Head: Spring 2000 – Fall 2001
Archie Holmes, Jr.
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Professional Public Service
Guest Editor
Special Issue on Narrow Band-Gap Semiconductors, to be published in Journal of Electronic
Materials, 2008
WOCSEMMAD
Committee Member: 2007 to present
Electronic Materials Conference
Secretary: 2008 to 2011
Committee Member: 2005 to 2011
Invited Organizer for Conference: 2003, 2004, 2005, 2012
North American MBE Conference
Program Chair, 2003
Program Committee Member: 2001
American Society for Engineering Education (ASEE) Abstract Reviewer: 2010 to Present
Frontiers in Education Conference
Steering Committee Member: 2012 to present
ASEE/ERM Program Co-Chair: 2012
Abstract Reviewer: 2003 to Present
Member Of LED Working Group on “Recommendations for Liberal Education in Engineering”,
ASEE (2000-2001)
Honors and Recognition
Thomas E. Hutchinson Faculty Award Winner, 2013
The Hartfield–Jefferson Scholars Teaching Prize, 2012
Founding Member, University Academy of Teaching, The University of Virginia (2011)
Outstanding New Advisor Award from the National Academic Advising Association (Fall 2005)
Dad’s Association Centennial Teaching Fellowship, The University of Texas – Austin (Fall 2003)
Texas Excellence Teaching Award in Engineering, The University of Texas – Austin (Fall 2002)
Gordon T. Lepley IV Endowed Memorial Teaching Award, The University of Texas – Austin (Fall
2001)
Engineering Foundation Young Faculty Award, The University of Texas – Austin (Summer 2000)
Faculty Appreciation Award from Student Engineering Council, The University of Texas – Austin
(Fall 1999)
Eastman Faculty Teaching Excellence Award, The University of Texas – Austin (1998)
National Defense Science and Engineering Graduate Fellowship Recipient (1991-1994)
National Science Foundation Graduate Fellowship Honorable Mention (1991)
Archie Holmes, Jr.
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Teaching: The University of Virginia
Ratings at The University of Virginia are based on a scale from 1 (low) to 5 (high). The comparative data
are from courses of the same level taught throughout the School of Applied Sciences and Engineering.
2012-2013
Semester Fall 2012
Course ENGR 1620: Introduction to Engineering
Course Type 100-level (first year)
Enrollment 40
Overall (Comparative) Course Rating 3.96 (3.84)
Overall (Comparative) Instructor Rating 4.67 (4.04)
Semester Fall 2012
Course ECE 2630: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 119
Overall (Comparative) Course Rating 4.05 (4.07)
Overall (Comparative) Instructor Rating 4.41 (4.11)
2011-2012
Semester Fall 2011
Course ENGR 1620: Introduction to Engineering
Course Type 100-level (first year)
Enrollment 40
Overall (Comparative) Course Rating 4.10 (3.94)
Overall (Comparative) Instructor Rating 4.64 (4.15)
Semester Fall 2011
Course ECE 2630: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 121
Overall (Comparative) Course Rating 3.85 (4.03)
Overall (Comparative) Instructor Rating 4.42 (4.25)
2010-2011
Semester Fall 2010
Course ENGR 1620: Introduction to Engineering
Course Type 100-level (first year)
Enrollment 33
Overall (Comparative) Course Rating 3.7 (3.91)
Overall (Comparative) Instructor Rating 4.37 (4.08)
Semester Fall 2010
Course ECE 2630: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 124
Overall (Comparative) Course Rating 4.02 (4.00)
Archie Holmes, Jr.
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Overall (Comparative) Instructor Rating 4.43 (4.27)
2009-2010
Semester Fall 2009
Course ENGR 1620: Introduction to Engineering
Course Type 100-level (first year)
Enrollment 36
Overall (Comparative) Course Rating 3.93 (3.89)
Overall (Comparative) Instructor Rating 4.22 (4.05)
Semester Fall 2009
Course ECE 2630: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 104
Overall (Comparative) Course Rating 4.13 (4.01)
Overall (Comparative) Instructor Rating 4.36 (4.22)
2008-2009
Semester Spring 2009
Course ECE 200: Science of Information
Course Type 200-level (second-year)
Enrollment 87
Overall (Comparative) Course Rating 3.82 (3.98)
Overall (Comparative) Instructor Rating 3.81 (4.11)
Semester Fall 2008
Course ECE 203: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 89
Overall (Comparative) Course Rating 4.14 (3.98)
Overall (Comparative) Instructor Rating 4.49 (4.19)
2007-2008
Semester Spring 2008
Course ECE 200: Science of Information
Course Type 200-level (second-year)
Enrollment 91
Overall (Comparative) Course Rating 3.6 (4.0)
Overall (Comparative) Instructor Rating 4.21 (4.14)
Semester Fall 2007
Course ECE 203: Introductory Circuit Analysis
Course Type 200-level (second-year)
Enrollment 70
Overall (Comparative) Course Rating 4.29 (3.94)
Overall (Comparative) Instructor Rating 4.61 (4.08)
Archie Holmes, Jr.
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Teaching: The University of Texas at Austin
Ratings at The University of Texas at Austin are based on a scale from 1 (low) to 5 (high).
2006-2007
Sem. Course Course Type Overall Instructor Rating Fall 2006 EE 302H: Introduction to ECE - Honors Required Freshman 4.5
2005-2006
Sem. Course Course Type Overall Instructor Rating Spring 2006 EE 155: Engineering Design Seminar Required Junior 4.2
Fall 2005 EE 302: Introduction to ECE Required Freshman 4.6
2004-2005
Sem. Course Title Course Type Overall Instructor
Rating Fall 2004 EE 339: Solid-State Electronic Devices Required Junior 4.2
Fall 2004 EE 302: Introduction to ECE Required Freshman 4.6
Fall 2004 EE 155: Engineering Design Seminar Required Junior 4.1
2003-2004
Sem. Course Title Course Type Overall Instructor
Rating Spring 2004 EE 396K: Semiconductor Heterostructures Graduate 4.4
Fall 2003 EE 302: Introduction to ECE Required Freshman 4.5
2002-2003
Sem. Course Title Course Type Overall Instructor
Rating Spring 2003 EE 339: Solid-State Electronic Devices Required Junior 4.8
Fall 2002 EE 302: Introduction to ECE Required Freshman 4.8
2001-2002
Sem. Course Title Course Type Overall Instructor
Rating Spring 2002 EE 396K: Semiconductor Heterostructures Graduate 4.6
Spring 2002 EE 339: Solid-State Electronic Devices Required Junior 4.7
Fall 2001 EE 302: Introduction to ECE Required Freshman 4.5
2000-2001
Sem. Course Title Course Type Overall Instructor
Rating Summer 2001 EE 339: Solid-State Electronic Devices Required Junior 4.2
Spring 2001 EE 339: Solid-State Electronic Devices Required Junior 4.4
Fall 2000 EE 302: Introduction to ECE Required Freshman 4.3
Fall 2000 EE 396K: Semiconductor Heterostructures Graduate 4.3
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1999-2000
Sem. Course Title Course Type Overall Instructor
Rating Spring 2000 EE 339: Solid-State Electronic Devices Required Junior 4.5
Fall 1999 EE 396K: Semiconductor Heterostructures Graduate 4.1
Fall 1999 EE 302: Introduction to ECE Required Freshman 4.4
1998-1999
Sem. Course Title Course Type Overall Instructor
Rating Spring 1999 EE 302: Introduction to ECE Required Freshman 4.0
Fall 1998 EE 396K: Semiconductor Heterostructures Graduate 3.8
1997-1998
Sem. Course Title Course Type Overall Instructor Rating Spring 1998 EE 339: Solid-State Electronic Devices Required Junior 4.2
Fall 1997 EE 339: Solid-State Electronic Devices Required Junior 4.0
Archie Holmes, Jr.
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Research Funding
Total Secured to Date (my share): $3.30 Million
Current Grants
Title: Characterization of Traps in GaInAs/GaAsSb MQW Structures
Sponsor: National Science Foundation
Role: PI (Co-PI: Patrick Fay (ECE, Notre Dame))
Amount: $369,525
Dates: 6/2009 – 5/2013
Title: Extended Wavelength Geiger Mode Photodetectors
Sponsor: MIT Lincoln Labs
Role: PI
Dates: 3/2012 – 1/2013
Amount: $86,000
Title: RIGEE: Improving Problem Solving in Electric Circuits using Cognitive Task Analysis
Sponsor: NSF
Role: PI (co-PI: David Feldon, University of Virginia)
Dates: 9/2011 – 8/2013
Amount: 131,093 (60% share)
Archie Holmes, Jr.
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Publications
h-index: 25
i10 index: 55
Calculations courtesy of Google Scholar
Summary: Over 110 publications in refereed journals. Papers in this section are separted by topic.
Photodiodes
1. B. Chen, Q. Zhou, D. C. McIntosh, J. Yuan, Y. Chen, W. Sun, et al., "Natural lithography
nano-sphere texturing as antireflective layer on InP-based pin photodiodes," Electronics
Letters, vol. 48, pp. 1340-1341, 2012.
2. B. Chen, J. Yuan, and A. L. Holmes, "Dark current modeling of InP based SWIR and
MWIR InGaAs/GaAsSb type-II MQW photodiodes," Optical and Quantum Electronics,
pp. 1-7, 2012.
3. B. Chen and A. L. Holmes, "Optical gain modeling of InP based InGaAs (N)/GaAsSb
type-II quantum wells laser for mid-infrared emission," Optical and Quantum
Electronics, pp. 1-8, 2012.
4. Yuan, J. , Chen, B. , Holmes, A.L., “Near-infrared quantum efficiency of uncooled
photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP”, Electronics
Letters 47(20), 1144 (2011)
5. Chen, B.; Weiyang Jiang; Jinrong Yuan; Holmes, A.L.; Onat, B.M.; “SWIR/MWIR InP-Based p-
i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells”, IEEE Journal of Quantum
Electronics 47(9), 1244 (2011)
6. Baile Chen; Jiang, W.Y.; Jinrong Yuan ; Holmes, A.L., Jr. ; Onat, B.M., “Demonstration of a
Room-temperature InP-based Photodetector Operating Beyond 3 μm”, IEEE Photonics
Technology Letters, 23(4), 218, (2011)
7. Jiang, W.Y. ; Baile Chen; Jinrong Yuan; Holmes, A.L., Jr., “Design and characterization of
strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at
~3μm”, Proceedings of the SPIE - The International Society for Optical Engineering, v 7660, p
76603O (2010)
8. Ning Li, Hao Chen, Ning Duan, Mingguo Liu, S. Demiguel,, R. Sidhu, A.L. Holmes, Jr., and J.C.
Campbell, “High power photodiode wafer bonded to Si using Au with improved responsivity and
output power”, IEEE Photonics Technology Letters 18(23), 2526 (2006)
9. Sidhu, R.; Zhang, L.; Tan, N.; Duan, N.; Campbell, J.C.; Holmes, A.L.; Hsu, C.-F.; Itzler, M.A.,
“2.4 µm cutoff wavelength avalanche photodiode on InP substrate”, Electronics Letters 42(3),
181 (2006)
10. Sidhu, R.; Ning Duan; Campbell, J.C.; Holmes, A.L., Jr., “A long-wavelength photodiode on InP
using lattice-matched GaInAs-GaAsSb type-II quantum wells”, IEEE Photonics Technology
Letters 17(12), 2715 (2005)
11. Sidhu, R.; Chen, H.; Duan, N.; Karve, G.V.; Campbell, J.C.; Holmes, A.L., Jr., “GaAsSb
resonant-cavity enhanced avalanche photodiode operating at 1.06 m”, Electronics Letters,
40(20), 1296 (2004)
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12. Zheng, X.G.; Hsu, J.S.; Hurst, J.B.; Li, X.; Wang, S.; Sun, X.; Holmes, A.L., Jr.; Campbell, J.C.;
Huntington, A.S.; Coldren, L.A , "Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area
avalanche photodiodes and arrays", IEEE Journal of Quantum Electronics 40 (8), 1068 (2004)
13. N. Li, R. Sidhu, X.W. Li, F. Ma, S. Demiguel, X.G. Zheng, A.L. Holmes, J.C. Campbell, D.A.
Tulchinsky, and K.J. Williams, “High-saturation-current InGaAs/InAlAs charge-compensated
uni-traveling-carrier photodiode”, Physica Status Solidi A – Applied Research, 201(13), 3037
(2004)
14. Gauri Karve, Xiaoguang Zheng, Xiaofeng Zhang, Xiaowei Li, Ning Li, Shuling Wang, Feng Ma,
Archie Holmes, Jr., Joe C. Campbell, G. S. Kinsey, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan,
Donald S. Bethune, and William P. Risk, “Geiger Mode Operation of an In0.53Ga0.47As–
In0.52Al0.48As Avalanche Photodiode”, Journal of Quantum Electronics 39(10), 1281 (2003)
15. Oh-Hyun Kwon, Majeed M. Hayat, Shuling Wang, Joe C. Campbell, Archie Holmes, Jr., Yi Pan,
Bahaa E. A. Saleh, and Malvin C. Teich, “Optimal Excess Noise Reduction in Thin
Heterojunction Al0.6Ga0.4As–GaAs Avalanche Photodiodes”, Journal of Quantum Electronics
39(10), 1287 (2003)
16. Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve,
Stephane Demiguel, Archie L. Holmes, Jr., and Joe C. Campbell, “InGaAs/InAlAs avalanche
photodiode with undepleted absorber”, Applied Physics Letters 82(13), 2175 (2003)
17. Shuling Wang, Feng Ma, Xiaowei Li, Sidhu, R., XiaoGuang Zheng, Xiaoguang Sun, A.L.
Holmes, Jr., and J.C. Campbell, “Ultra-low noise avalanche photodiodes with a "centered-well"
multiplication region”, IEEE Journal of Quantum Electronics 39(2), 375 (2003)
18. X. Sun, S. Wang, X. G. Zheng, X. Li, J. C. Campbell, and A. L. Holmes, Jr., “1.31 µm GaAsSb
resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes
with low noise”, Journal of Applied Physics 93(1), 774 (2003)
19. Mohammad A. Saleh, Majeed M. Hayat, Oh-Hyun Kwon, Archie L. Holmes, Jr., Joe C.
Campbell, Bahaa E. A. Saleh, and Malvin C. Teich, “Breakdown voltage in thin III-V avalanche
photodiodes”, Applied Physics Letters 79(24), p. 4037 (2002)
20. Xiaoguang Sun, Shuling Wang, Jean S. Hsu, Rubin Shidu, Xiaoguang Zheng, Xiaowei Li, Joe C.
Campbell, and Archie L. Holmes, Jr., “GaAsSb: A Novel Material for Near Infrared
Photodetectors on GaAs Substrates”, IEEE Journal of Selected Topics in Quantum Electronics,
8(4), 817 (2002).
21. X.G. Zheng, J.S. Hsu, X. Sun, J.B. Hurst, X. Li, S. Wang, A.L. Holmes, J.C. Campbell, A.S.
Huntington, and L.A. Coldren, “A 12x12 In0.53Ga0.47As/In0.52Al0.48As avalanche photodiode
array”, IEEE Journal of Quantum Electronics, 38(11), 1536 (2002)
22. S. Wang, J.B. Hurst, F. Ma, R. Shidu, X. Sun, X. Zheng, A.L. Holmes, A. Huntington, L.A.
Coldren, and J.C. Campbell, “Low-Noise impact-ionization-engineered avalanche photodiodes
grown on InP substrates”, IEEE Photonics Technology Letters, 14(12), 1722 (2002)
23. Feng Ma, Gauri Karve, Xiaoguang Zheng, Xiaoguang Sun, Archie L. Holmes, Jr., and Joe C.
Campbell, “Low-temperature breakdown properties of AlxGa1–xAs avalanche photodiodes”,
Applied Physics Letters 81(10),1908 (2002)
24. F. Ma, S. Wang, X. Li, K. A. Anselm, X. G. Zheng, A. L. Holmes, Jr., and J. C. Campbell,
“Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions”, Journal of
Applied Physics 92(8), 4791 (2002)
25. Shuling Wang; Sidhu, R.; Karve, G.; Feng Ma; Xiaowei Li; XiaoGuang Zheng; Hurst, J.B.;
Xiaoguang Sun; Ning Li; Holmes, A.L., Jr.; Campbell, J.C., “A study of low-bias photocurrent
gradient of avalanche photodiodes”, IEEE Transactions on Electron Devices 49(12), 2107 (2002)
Archie Holmes, Jr.
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26. G.S. Kinsey, R. Sidhu, A.L. Holmes, Jr., and J.C. Campbell,” Improved Optical Coupling in
waveguide photodetectors incorporating a wedge-shaped input facet”, Optics Letters 27(9), p.749
(2002)
27. X. Sun, J. Hsu, X.G. Zheng, J.C. Campbell, and A.L. Holmes, Jr.,”GaAsSb
resonant-cavity-enhanced photdetector operating at 1.3 m”, IEEE Photonics Technology Letters
14(5), p. 681 (2002)
28. X. G. Zheng, X. Sun, S. Wang, P. Yuan, G. S. Kinsey, A. L. Holmes, Jr., B. G. Streetman, and J.
C. Campbell, “Multiplication Noise of AlxGa1-xAs avalanche photodiodes with High Al
Concentration and Thin Multiplication Region,” Applied Physics Letters 78(24), 3833 (2001)
29. Joe C. Campbell, Shuling Wang, X.G. Xheng, G.S. Kinsey, A.L. Holmes, Jr., X.Sun, R. Shidu,
and P.Yuan, “Ultra-Low Noise Avalanche Photodiodes”, Proceedings of the SPIE 4283, 480
(2001)
30. David Gotthold, Sridhar Govindaraju, Jason Reifsnider, Geoff Kinsey, Joe Campbell, and Archie
Holmes, Jr., “Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for
photodiodes”, Journal of Vacuum Science and Technology B 19(4), 1400 (2001)
31. S. Wang, R. Shidu, X.G. Zheng, X. Li, A.L. Holmes, Jr., and J.C. Campbell, “Low-noise
avalanche photodiodes with graded impact-ionization-engineered multiplication region”, IEEE
Photonics Technology Letters 13(12), p1346 (2001).
32. M.A. Saleh, M.M. Hayat, P.P. Sotirelis, A.L. Holmes, Jr., J.C. Campbell, B.E.A. Saleh, and
M.C. Teich, “Impact-ionization and noise characteristics of thin III-V photodiodes”, IEEE
Transactions on Electron Devices 48(12), p. 2722 (2001).
33. P. Yuan, C.C. Hansing, K.A. Anselm, C.V. Lenox, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and
J.C. Campbell, "Impact Ionization Characteristics of III-V Semiconductors for a Wide Range of
Multiplication Region Thicknesses", IEEE Journal of Quantum Electronics 36(2), 198 (2000).
34. G.S. Kinsey, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, “GaNAs
avalanch photodiode operating at 0.94 m”, Applied Physics Letters 76(20), 2824 (2000)
35. G. S. Kinsey, C. C. Hansing, A. L. Holmes, Jr., B. G. Streetman, J. C. Campbell, and A. G.
Dentai. “Waveguide In0.53Ga0.47As-In0.52Al0.48As Avalanche Photodiode”, IEEE Photonics
Technology Letters 12(4), 416 (2000)
36. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, “High-
Speed and low-noise avalanche photodiode operating at 1.06 m”, IEEE Journal of Special
Topics in Quantum Electronics 6(3), 422 (2000).
37. S. Wang, T. Li, J.M. Reifsnider, B. Yang, C. Collins, A.L. Holmes, Jr., and J.C. Campbell,
“Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by
molecular beam epitaxy”, IEEE Journal of Quantum Electronics 36(11), 1262 (2000)
38. X.G. Zheng, P. Yuan, X. Sun, G.S. Kinsey, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell,
“Temperature Dependence of the Ionization Coefficients of AlxGa1-xAs”, IEEE Journal of
Quantum Electronics 36(10), 1168 (2000)
39. P. Yuan, S. Wang, X. Sun, X.G. Zheng, A.L. Holmes, Jr., and J.C. Campbell, “Avalanche
Photodiodes with an impact-ionization-engineered multiplication region”, IEEE Photonics
Technology Letters 12(10), 1370 (2000)
40. G.S. Kinsey, D.W. Gotthold, A.L. Holmes, Jr., and J.C. Campbell, “GaNAs resonant-cavity
avalanche photodiode operating at 1.064 m”, Applied Physics Letters 77(10), 1543 (2000)
41. J.C. Campbell, H. Nie, C. Lenox, G. Kinsey, P. Yuan, A.L. Holmes, Jr., B.G. Streetman, “High
speed resonant-cavity InGaAs/InAlAs avalanche photodiodes”, International Journal of High
Speed Electronics and Systems 10(1), 327 (2000)
Archie Holmes, Jr.
Page 13
42. P. Yuan, K.A. Anselm, C. Hu, H. Nie, C. Lenox, A.L. Holmes, B.G. Streetmanm J.C. Campbell,
and R.J. McIntyre, "A New Look at Impact Ionization -- Part II: Gain and Noise in Short
Avalanche Photodiodes", IEEE Transactions on Electron Devices 46(8), 1632 (1999).
43. C. Lenox, H. Nie, P. Yuan, G. Kinsey, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell,
"Resonant-Cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290
GHz", IEEE Photonics Technology Letters 11(9), 1162 (1999)
44. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., and B.G.
Streetman, “Thin Multiplication Region InAlAs Homojunction Avalanche Photodiodes,” Applied
Physics Letters 73(6), 783 (1998).
45. C. Lenox, H. Nie, G. Kinsey, P. Yuan, A.L. Holmes, B.G. Streetman, and J.C. Campbell,
“Improved Optical Response of Superlattice Graded InAlAs/InGaAs p-i-n Photodetectors,”
Applied Physics Letters 73(23), 3405 (1998).
Dilute Nitrides
46. Michael M. Oye, Seth R. Bank, Aaron J Ptak, Robert C Reddy, Mark S. Goorsky, and Archie L.
Holmes, Jr, “Role of Ion Damage on unintentional Ca incorporation during the plasma-assisted
molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures”, Journal of
Vacuum Science and Technology B 26(3), 1058 (2008)
47. Oye, MM; Mattord, TJ; Hallock, GA; Bank, SR; Wistey, MA; Reifsnider, JM; Ptak, AJ; Yuen,
HB; Harris, JS; Holmes, AL , “Effects of different plasma species (atomic N, metastable N-2(*),
and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-
beam epitaxy “, Applied Physics Letters 91, 191903-1-3 (2007)
48. Michael M. Oye, Sridhar Govindaraju, Rubin Sidhu, Jason M. Reifsnider, and Archie L. Holmes,
Jr., “Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum weft
with GaNAs barriers and GaAs spacer layers”, Applied Physics Letters 86, 151903 (2005)
49. Michael M. Oye, Mark A. Wistey, Jason M. Reifsnider, Sumit Agarwal, Terry J. Mattord, Sridhar
Govindaraju, Gary A. Hallock, and Archie L. Holmes, Jr., Seth R. Bank, Homan B. Yuen, and
James S. Harris, Jr., “Ion damage effects from negative deflector plate voltages during the
plasma-assisted molecular-beam epitaxy growth of dilute nitrides”, Applied Physics Letters 86,
221902 (2005)
50. M. A. Wistey, S. R. Bank, H. B. Yuen, and J. S. Harris, Jr. , M. M. Oye and A. L. Holmes, Jr.,
“Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy”,
Journal of Vacuum Science & Technology A 23(3), 460 (2005)
51. Jason M. Reifsnider, Michael M. Oye, Sridhar Govindaraju, and Archie L. Holmes, Jr., “Critical
RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with
dilute N2/Ar gas mix”, Journal of Crystal Growth 280, 7-15 (2005)
52. Sridhar Govindaraju; Jason M. Reifsnider; Michael M. Oye; Archie L. Holmes, “Rapid Thermal
Annealing Effects on the Photoluminescence Properties of Molecular Beam Epitaxy–Grown
GaIn(N)As Quantum Wells with Ga(N)As Spacers and Barriers”, Journal of Electronic
Materials, 33(8), 851 (2004)
53. Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, and Archie L. Holmes, Jr., “Time
and Temperature Dependence on Rapid Thermal Annealing of Molecular Beam Epitaxy Grown
Ga0.8In0.2N0.01As0.99 Quantum Wells Analyzed Using Photoluminescence”, Journal of Electronic
Materials 32(1),29 -33 (2003)
54. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and characterization of Ga0.8In0.2(N)As
quantum wells with GaNxAs1–x(x<0.05) barriers by plasma-assisted molecular beam epitaxy”,
Journal of Vacuum Science and Technology B 20(3), p. 1167 (2002)
Archie Holmes, Jr.
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55. Jason M. Reifsnider, Sridhar Govindaraju and Archie L. Holmes, Jr., “Use of optical emission
intensity to characterize an RF plasma source for MBE growth of GaAsN”, Journal of Crystal
Growth 243(3-4), 396 (2002)
56. David W. Gotthold, Sridhar Govindaraju, Archie L. Holmes, Jr, and Ben G. Streetman, “Growth
of GaInNAs by Plasma Assisted Molecular Beam Epitaxy”, Materials Research Society
Symposium Proceedings, Vol. 618, 315 (2000)
57. David W. Gotthold, Sridhar Govindaraju, Terry Mattord, Archie L. Holmes, Jr., and Ben G.
Streetman “Growth of GaNAs by molecular beam epitaxy using a N2/Ar RF Plasma”, Journal of
Vacuum Science and Technology A 18(2), 461 (2000)
Growth and Processing
58. J. B. Hurst, Shannon D. Lewis, Michael M. Oye, Archie L. Holmes, Jr., A. J. Ptak, and R. C.
Reedy, “Unintentional calcium incorporation in Ga(Al, In, N)As”, Journal of Vauum. Science
and Technology B 25(3), 1058 (2007)
59. Michael M. Oye, et al. “Atomic Force microscopy study of sapphire surfaces anneals with a H2O
flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3”, Journal of
Vacuum Science and Technology B 24(3), 1572 (2006)
60. Michael M. Oye, J. Ahn, C. Cao, H. Chen, W. Fordyce, D. Gazula, S. Govindaraju, J. B. Hurst, S.
Lipson, D. Lu, J. M. Reifsnider, O. Shchekin, R. Sidhu, X. Sun, D. G. Deppe, A. L. Holmes, Jr.,
and Terry J. Mattord, “Inert gas maintenance for molecular-beam epitaxy systems”, Journal of
Vacuum Science & Technology B 23, 1257-1261 (2005)
61. Terry J. Mattord, Michael M. Oye, David Gotthold, Chad Hansing, Archie L. Holmes, Jr., and
Ben G. Streetman, “Construction of a variable aperture cell for source flux control in a molecular-
beam epitaxy environment”, Journal of Vacuum Science and Technology A 22, 735 (2004)
62. David Gotthold, Sridhar Govindaraju, Jason Reifsnider, Geoff Kinsey, Joe Campbell, and Archie
Holmes, Jr., “Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for
photodiodes”, Journal of Vacuum Science and Technology B 19(4), 1400 (2001)
63. C. Lenox, H. Nie, G. Kinsey, C. Hansing, J. C. Campbell, A. L. Holmes, Jr., and B. G. Streetman,
"Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by
molecular-beam epitaxy", Journal of Vacuum Science and Technolgy B 17(3), 1175, (1999)
64. J.M. Reifsnider, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, "Improved Quality GaN Films
Grown by Molecular Beam Epitaxy on Sapphire", Journal of Vacuum Science and Technology B
16(3), 1278 (1998)
65. D.G Yu, C. –H Chen, A.L. Holmes, Jr, S.P. DenBaars, and E.L. Hu, “Role of Defect Diffusion in
the InP damage profile”, Journal of Vacuum Science and Technology B 15(6), 2672 (1997)
66. D.G. Yu, C.-H. Chen, A.L. Holmes, Jr, E.L. Hu, and S.P. DenBaars, “Comparing ion damage in
GaAs and InP”, Microelectronic Engineering 35 (1-4), 95 (1997)
67. A.L. Holmes, Jr., M.E. Heimbuch, G. Fish, S.P. DenBaars, and L.A. Coldren, “InP-Based
Multiple Quantum Well Structures Grown with Tertiarybutylarsine and Tertiarybutylphosphine:
Effects of Growth Interruptions on Structural and Optical Properties”, Journal of Electronic
Materials 25, 965 (1996)
68. Monique S. Gaffney, Casper M. Reaves, Roy S. Smith, Archie L. Holmes, Jr. and Steven P.
DenBaars, "Control of III-V Epitaxy in a Metalorganic Chemical Vapor Deposition Process:
Impact of Source Flow Control on Composition and Thickness", Journal of Crystal Growth 167
(1-2), 8-16 (1996).
Archie Holmes, Jr.
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69. M.S. Gaffney, C.M. Reaves, A.L. Holmes, Jr., R.S. Smith, and S.P. DenBaars, "Real-time
Composition and Thickness Control Techniques in a Metalorganic Chemical Vapor Deposition
Process", Diagnostic Techniques for Semiconductor Materials Processing II., Materials Research
Society, p. 133-8, (1996).
70. D.G. Yu, C.-H Chen, B.P. Keller, A.L. Holmes, Jr, E.L. Hu, and S.P. DenBaars, “Investigation of
improved regrown material on InP surfaces etched with methane/hydrogen/argon”, Journal of
Vacuum Science and Technology B 14(6), 3674 (1996)
71. S.P. DenBaars, A.L. Holmes, M.E. Heimbuch, V.J. Jayaraman, C.M. Reaves, J.B. Shealy, U.
Mishra, L.A. Coldren, and J.E. Bowers, "Indium Phosphide (InP) Based Heterostructure
Materials and Devices Grown by MOCVD using Tertiarybutylarsine (TBA) and
Tertiarybutylphosphine (TBP)", Journal of the Korean Physical Society 28, pp. S37 - S42 (1995).
72. Monique S. Gaffney, Roy S. Smith, Archie L. Holmes, Jr., Casper M. Reaves, and Steven P.
DenBaars, "Improved Composition and Thickness Control of III-V Epitaxy in a Metalorganic
Chemical Vapor Deposition Process", Proceedings of the 34th IEEE Conference on Decision and
Control, New Orleans, LA, pp. 2490-2495 (1995)
73. D.G. Yu, B.P. Keller, A.L. Holmes, Jr., E.L. Hu, and S.P. DenBaars, "Analysis of InP Etched
Surfaces using Metalorganic Chemical Vapor Deposition Regrown Quantum Well Structures",
Journal of Vacuum Science and Technology B 13 (6), 2381 - 2385 (1995).
74. B.P. Keller, J.C. Yen, A.L. Holmes, S.P. DenBaars, and U. Mishra "Flow Modulation Epitaxy of
GaxIn1-xAs/AlAs Heterostructures on InP for Resonant Tunneling Diodes", Applied Surface
Science 82-83, pp. 179-88 (1994).
Quantum Dots
75. H. Eisele, P. Ebert, N. Liu, A. L. Holmes, and C. K. Shih, "Reverse mass transport during
capping of In0.5Ga0.5As/GaAs quantum dots," Applied Physics Letters, vol. 101, pp.
233107-233107-4, 2012.
76. X.-D. Wang, N. Liu, C. K. Shih, S. Govindaraju, and A. L. Holmes, Jr. . "Spatial correlation-
anticorrelation in strain-driven self-assembled InGaAs quantum dots," Applied Physics Letters
85, 1356 (2004).
77. H. Htoon, T. Takagahara, D. Kulik, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, “Interplay of
Rabi Oscillations and Quantum Interferences in Semiconductor Quantum Dots”, Physical Review
Letters 88(8), 087401 (2002)
78. H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes, Jr., T. Takagahara, and C.K. Shih, “Carrier
Relaxation and quantum dechoerence of excited states in self-assembled quantum dots”, Physical
Review B 63,241303(R), (2001)
79. H. Htoon, J. Keto, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, "Cross-sectional
Nanophotoluminesce Studies of Stark Effects in Self-Assembled Quantum Dots", Applied
Physics Letters 76(6), 700 (2000)
80. N. Liu, J. Tersoff, O. Baklenov, A.L. Holmes, Jr., and C.K. Shih, “Nonuniform Composition
Profile in In0.5Ga0.5GaAs Alloy Quantum Dots”, Physical Review Letters 84(2), 334 (2000)
81. S. Govindaraju, R. Sidhu, and A.L. Holmes, Jr., “MEE-grown InGaAs quantum dots embedded in
an InxGa1-xAs (x 0.2) matrix for 1.3 m emission”, Materials Research Society Symposium
Proceedings, Vol. 642, 315 (2000)O. Baklenov, H. Nie, J.C. Campbell, B.G. Streetman, and A.L.
Holmes, Jr., "Long-Wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by
migration enhanced epitaxy", Journal of Vacuum Science and Technolgy B 17(3), 1124 (1999).
Archie Holmes, Jr.
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82. Htoon, H., Hongbin, Yu, Kulik, D., Keto, W. J., Baklenov, O., Holmes, A. L., Jr., Streetman, B.
G., and Shih, C. K, "Quantum dots at the nanometer scale: Interdot carrier shuffling and
multiparticle states", Physical Review B (Condensed Matter) 60(15), 11026 (1999)
Semiconductor Lasers
83. J. Y. T. Huang, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, C. S. Kim, I. Vurgaftman, J.
R. Meyer, and A. L. Holmes, "Design and characterization of strained InGaAs/GaAsSb type-II
'W' quantum wells on InP substrates for mid-IR emission," Journal of Physics D-Applied Physics,
vol. 42, Jan 2009.
84. D. Tauber, M. Horita, J. Piprek, P. Abraham, A. L. Holmes, Jr., and J. E. Bowers, “The
Microstrip Laser,” IEEE Photonics Technology Letters, vol. 10, pp. 478-80, (1998).
85. K. Itaya, A.L. Holmes, S. Keller, S.G. Hummel, L.A. Coldren, and S.P. DenBaars, “Lasing
Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor
Deposition with Tertiarybutylphosphine (TBP)”, Japanese Journal of Applied Physics Part
2 - Letters 34 (11B), L1540-1542 (1995).
86. Rangchen Yu, Radhakrishnan Nagarajan, T. Reynolds, A. Holmes, J.E. Bowers, S.P. DenBaars,
and Chung-En Zah, "Ultrahigh Speed Performance of a Quantum Well Laser at Cryogenic
Temperatures", Applied Physics Letters 65 (5), 528-530 (1994).
87. Daniel A. Tauber, Ralph Spickermann, Radhakrishnan Nagarajan, Thomas Reynolds, Archie L.
Holmes, Jr., and John E. Bowers, "Inherent Bandwidth Limits in Semiconductor Lasers due to
Distributed Microwave Effects", Applied Physics Letters 64 (13), pp. 1610 - 1612 (1994)
88. S.P. DenBaars, A.L. Holmes, Jr., and M.E. Heimbuch, "Compressively Strained 1.55 µm
InxGa1-xAsyP1-y/InP Quantum Well Laser Diodes Grown by MOCVD with Tertiarybutylarsine
(TBA) and Tertiarybutylphosphine (TBP)", Proceedings of SPIE Intl. Symposium on
Optoelectronics for Information and Microwave Systems, Laser Diode Technology VI, Los
Angeles CA, pp. 179-188 (1994).
89. M.E. Heimbuch, A.L. Holmes, Jr., C.M. Reaves, M.P. Mack, S.P. DenBaars, and L.A. Coldren,
"Tertiarybutylarsine and Tertiarybutylphosphine for the MOCVD Growth of Low Threshold 1.55
µm InxGa1-xAs/InP Quantum-Well Lasers", Journal of Electronic Materials 23 (2), pp. 87-91
(1994).
90. A.L. Holmes, Jr., M.E. Heimbuch, and S.P. DenBaars, "Strained GaInAsP Single-Quantum-Well
Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine", Applied Physics Letters 63
(25),pp. 3417-3419 (1993).
91. M.E. Heimbuch, A.L. Holmes, Jr., M.P. Mack, S.P. DenBaars, L.A. Coldren, and J.E. Bowers,
"Low Threshold 1.5 µm Quantum Well Lasers Grown by Atmospheric Pressure MOCVD with
Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP)", Electronics Letters 29 (4), pp.
340-341 (1993).
92. M.E. Heimbuch, A.L. Holmes, Jr., M.P. Mack, S.P. DenBaars, L.A. Coldren, and J.E. Bowers,
"High Quality Long Wavelength Lasers Grown by Atmospheric Pressure MOCVD with Liquid
Group V Sources", IEEE Proceedings of the 5th Intl. InP and Related Materials Conf., Paris,
France,pp. 239-242 (1993).
93. S.P. DenBaars, A.L. Holmes, Jr., M.E. Heimbuch, and C.M. Reaves, "Low Threshold Strained
InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP", paper LE-19,
Extended Abstracts of European Workshop on MOVPE-V, Malmo, Sweden (1993).
Direct Wafer Bonding
94. A. Black, A.R. Hawkins, N.M. Margalit, D.I. Babic, A.L. Holmes, Jr., Y.-L. Chang, P. Abraham,
J.E. Bowers, and E.L. Hu, "Wafer Fusion: Materials Issues and Device Results", IEEE Journal of
Special Topics in Quantum Electronics 3(3), 943-51 (1997).
Archie Holmes, Jr.
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95. R.K. Sink, S. Keller, B. Keller, D.I. Babic, A.L. Holmes, D. Kapolnek, S.P. DenBaars, J.E.
Bowers, X.H. Wu, J.S. Speck, “Cleaved GaN facets by wafer fusion of GaN to InP”, Applied
Physics Letters 68, 2147 (1996)
96. I-Hsing Tan, C.M. Reaves, A.L. Holmes, Jr., E.L. Hu, J.E. Bowers, and S. DenBaars,
"Low-Temperature Pd bonding of III-V semiconductors", Electronics Letters 31 (7), pp. 588-589
(1995).
97. I-Hsing Tan, C.M. Reaves, James Dudley, Archie L. Holmes, Jr., Dubravco Babic, Evelyn Hu,
John Bowers, and Steven P. DenBaars, "Low-Temperature Pd Direct Bonding and Electrical
Transport Across InP-Pd-GaAs Interfaces", IEEE Proceedings of the 6th Intl. InP and Related
Materials Conf., Santa Barbara, California, pp. 628-31 (1994).
Other/Misc.
98. Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, and Patrick Fay, "Bulk and interfacial
deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode",
Applied Physics Letters 101, 052107 (2012), DOI:10.1063/1.4740275
99. W. Chen, J. Yuan, A. Holmes, and P. Fay, "Evaluation of deep levels in In0.53Ga0.47As and
GaAs0.5Sb0.5 using low‐frequency noise and RTS noise characterization," Physica Status Solidi C
1-4, 2011
100. Oye, Michael M., Shahrjerdi, Davood, Ok, Injo, Hurst, Jeffrey B., Lewis, Shannon D.,Dey,
Sagnik,Kelly, David Q., Joshi, Sachin, Mattord, Terry J., Yu, Xiaojun, Wistey, Mark A., Harris,
James S., Jr., Holmes, Archie L., Jr., Lee, Jack C., Banerjee, Sanjay K., “Molecular-beam epitaxy
growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex
step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor
applications”, Journal of Vacuum Science and Technology B25, 1098 (2007)
101. M. H. Zhang, M. Oye, B. Cobb, F. Zhu, H. S. Kim, I. J. Ok, J. Hurst, S. Lewis, A. Holmes, J. C.
Lee, S. Koveshnikov, W. Tsai, M. Yakimov, V. Torkanov, and S. Oktyabrsky, “Importance of
controlling oxygen incorporation into HfO2/Si/n-GaAs gate stacks”, Applied Physics Letters 101,
034103 (2007)
102. Xiao-Ping Yang, Richard A. Jones, Michael M. Oye, Archie L. Holmes, and Wai-Kwok Wong,
“Near Infrared Luminescence and Supramolecular Structure of a Helical Triple-Decker Yb(III)
Schiff Base Cluster”, Crystal Growth & Design 6(9), 2122 (2006)
103. Davood Shahrjerdi, Michael M. Oye, Archie L. Holmes, Jr., and Sanjay K. Banerjee, “Unpinned
metal gate/high-k GaAs capacitors: Fabrication and Characterization”, Applied Physics Letters
89, 043501 (2006)
104. Oye, M.M.; Hurst, J.B.; Shahrjerdi, D.; Kulkarni, N.N.; Muller, A.; Beck, A.L.; Sidhu, R.; Shih,
C.K.; Banerjee, S.K.; Campbell, J.C.; Holmes, A.L., Jr.; Mattord, T.J.; Reifsnider, J.M., “Atomic
force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-
beam epitaxy effusion cell loaded with Al(OH) 3”, Journal of Vacuum Science & Technology B
(Microelectronics and Nanometer Structures), 24(3), 1572 (2006)
105. WK Wong, Xp Yang, RA Jones, JH Rivers, V Lynch, WK Lo, D Xiao, MM Oye, and AL
Holmes, “Multinuclear luminescent Schiff-Base-Zn-Nd sandwich complexes”, Inorganic
Chemmistry 45(11), 4340 (2006)
106. Yang XP, Jones RA, Lai RJ, Waheed A, Oye MM, Holmes AL, “Supramolecular assembly of
nanometer-sized heterobimetallic 3d-4f complexes formed with benzimidazole based N,O-donor
ligands”, Polyhedron 25(4), pp. 881-887 (2006)
107. Yang XP, Jones RA, Wu QY, Oye MM, Lo WK, Wong WK, Holmes AL, “Synthesis, crystal
structures and antenna-like sensitization of visible and near infrared emission in heterobimetallic
Zn-Eu and Zn-Nd Schiff base compounds”, Polyhedron 25(2), pp. 271-278 (2006)
Archie Holmes, Jr.
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108. Yang XP, Jones RA, Wong WK, Lynch V, Oye MM, Holmes AL, “Design and synthesis of a
near infra-red luminescent hexanuclear Zn-Nd prism”, Chemical Communications 17,1836
(2006)
109. X.P. Yang, R.A. Jones, V. Lynch, M. Oye, and A.L. Holmes, “Synthesis and near infrared
luminescence of a tetrametallic Zn2Yb2 architecture from a trinuclear Zn3L2 Schiff base
complex”, Dalton Transactions 5, p. 849 (2005).
Education-Related
110. M.K. Markey, A. Holmes, Jr., T.F. Edgar, and K.J. Schmidt, “Student-driven Learning in
Integrated Lecture-lab Classroom Environments: The Role of Mobile Computing”, The
International Journal of Engineering Education 23(3), 483 (2007).
Archie Holmes, Jr.
Page 19
Conference Presentations
Summary: Over 75 conference contributions. Talks are organized by year.
2012
1. W. Chen, B. Chen, J. Yuan, A. Holmes, and P. Fay, "Characterization and impact of traps
in lattice-matched and strain-compensated In1- xGaxAs/GaAs1-ySby multiple quantum well
photodiodes," in Device Research Conference (DRC), 2012 70th Annual, 2012, pp. 251-
252.
2. Baile Chen, Archie L. Holmes, Jr., Viktor Khalfin, Igor Kudryashov, and Bora M. Onat,
“Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by
k*p method”, Proc. SPIE 8381, 83810F (2012)
2011
1. Baile Chen, AL Holmes, WY Jiang, and Jinrong Yuan, “Design of strain compensated
InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes”, presented at the
2011 11th International Conference on Numerical Simulation of Optoelectronic Devices
(NUSOD), October 2011, Rome, Italy.
2. Baile Chen, Wenlu Sun, Joe C Campbell, and AL Holmes, “Quantum efficiency modeling of PIN
photodiodes with InGaAs/GaAsSb quantum wells absorption region”, presented at the 2011 IEEE
Photonics Conference, October 2011, Washington, D.C.
3. Zhiwen Lu, Wenlu Sun, Chong Hu, Archie Holmes, Joe C Campbell, Yimin Kang, and Han-Din
Liu, “Ge on Si and InP/InGaAs single photon avalanche diodes”, presented at the SPIE Defense,
Security, and Sensing Conference, April 2011, Orlando, FL.
4. Wenlu Sun; Xiaoguang Zheng; Zhiwen Lu; Baile Chen; Holmes, A.L.; Campbell, J.C.; ,
"Numerical simulation of InAlAs/InAlGaAs tandem avalanche photodiodes," presented at the
2011 IEEE Photonics Conference, October 2011, Washington, D.C.
5. Baile Chen; Jinrong Yuan ; Holmes, A.L., Jr., “Modeling of the electrical characteristics of
SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes” presented at the SPIE Defense,
Security, and Sensing Conference, April 2011, Orlando, FL
6. Archie L Holmes, Jr., “InP-Based Mid-infrared Photodiodes”, presented at the WOCSEMMAD
2011, Savannah, GA.
2010
1. Jiang, W.Y.; Baile Chen; Jinrong Yuan; Holmes, A.L., Jr.,” Design and characterization of strain-
compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm”,
presented at the SPIE Defense, Security, and Sensing Conference, April 2010, Orlando, FL
2009
1. A.L. Holmes, “ Work in Progress – Quantifying Intrinsic Cognitive Load in DC Circuit
Problems”, presented at the Frontiers in Education Coferences 2009, San Antonio, TX
2. Archie L Holmes, Jr., “Near-Infrared Single Photon Counting Detectors”, presented at the
Quantum Limited Detector Workshop, RIT, Rochester, NY.
3. Archie L Holmes, Jr., “Use of SI-InP (Caps) for low dark current in small-diameter InGaAs
Photodiodes”, presented at the WOCSEMMAD 2009, Fort Meyers, Florida.
Archie Holmes, Jr.
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2008
1. Archie L Holmes, Jr., “InP-Based Mid-infrared Photodiodes”, presented at the WOCSEMMAD
2008, Palm Springs, CA.
2007 or earlier
1. (Invited) Archie L Holmes, Jr., “InP-based MIR Avalanche Photodiodes: Current Status and
Future Prospects”, presented at the 2006 IEEE LEOS Annual Meeting, Montreal, CA, paper TuI3
(2006).
2. (Invited) A.L. Holmes, Jr., J.C. Campbell, Xiaoguang Sun, Shuling Wang, R. Sidhu.; X.G.
Zheng, and Xiaowei Li, “Low noise telecommunications APDs”, presented at Semiconductor
Optoelectronic Devices for Lightwave Communication, Orlando, FL, USA (2003).
3. Archie L Holmes, Jr., “Strained GaAsSb/GaInAs quantum wells for MIR InP-based lasers”,
presented at the WOCSEMMAD 2007, Savannah, GA.
4. Michael Oye; Mark Wistey; Jason Reifsnider; Homan Yuen; Aaron Ptak; Paul May; Terry
Mattord; Sumit Agarwal; Jack Lee; Sanjay Banerjee; Gary Hallock; James Harris; Archie
Holmes; and Seth Bank, “Effects of Different Plasma Species on the Optical Properties of Dilute
Nitrides Grown by Plasma-Assisted Molecular-Beam Epitaxy”, presented at the 2007 Electronic
Materials Conferece, South Bend, In, paper GG3
5. Archie L Holmes, Jr., “Advanced InP-Based APDs for MWIR Applications”, presented at the
WOCSEMMAD 2006, Scottsdale, AZ.
6. Rubin Sidhu and Archie L Holmes, Jr., “Mid Infrared InP-based Photodiodes Operating At/Near
Room Temperature”, presented at the 2006 IEEE Summer Topicals, Quebec City, CA, paper
TuD2.3
7. Michael M. Oye; Davood Shahrjerdi; Xiaojun Yu; Sagnik Dey; David Q. Kelly; Shannon D.
Lewis; Mark A. Wistey; Jeffrey B. Hurst; Sachin Joshi; Terry J. Mattord; James S. Harris; Archie
L. Holmes; and Sanjay K.Banerjee, “GaAs Growth on Silicon Substrates Using a Thin (~80 Nm)
SiXGe1-X Step-Graded Buffer Layer for High-k III-V MOSFET Applications”, presented at the
2006 Electronic Materials Conferece, College Park, PA, paper BB3.
8. Archie L Holmes, Jr., “Strained GaAsSb/GaInAs quantum wells for Photodiodes”, presented at
the WOCSEMMAD 2005, Miami, FL.
9. Rubin Sidhu, Ning Duan, Joe C. Campbell, and Archie L. Holmes, Jr., “A 2.3 µm Cutoff
Wavelength Photodiode on InP Using Lattice Matched GaInAs-GaAsSb Type-II Quantum
Wells”, presented at the 2005 Indium Phosphide and Related Materials Conference, Glasgow,
Scotland
10. Michael M. Oye, Mark A. Wistey, Jason M. Reifsnider, Sumit Agarwal, Sridhar Govindaraju,
Seth R. Bank, Homan B. Yuen, Terry J. Mattord, James S. Harris, Gary A. Hallock, and Archie
L. Holmes, “Influence of Ion Flux and Ion Energy Distribution on the OpticalProperties of Dilute
Nitride Materials”, presented at the 2005 Electronic Materials Conference, Santa Barbara, CA,
paper L5.
11. Rubin Sidhu; Ning Duan; Joe C. Campbell; and Archie L. Holmes, “InP Based Photodiodes
Operating Beyond 2µm Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells”,
presented at the 2005 Electronic Materials Conference, Santa Barbara, CA, paper M8.
12. Rubin Sidhu, Ning Duan, Joe Campbell, and Archie Holmes, “2.4 µm cutoff wavelength
avalanche photodiode on Iindium Phosphide”, presented at the 18th Annual Meeting of the IEEE
Lasers and Electro-optics Society, Sydney, Australia, post-deadline paper (2005)
Archie Holmes, Jr.
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13. Sidhu, R., Chen, H., Duan, N., Karve, G.V., Campbell, J.C., Holmes, A.L., Jr., “GaAsSb
resonant-cavity-enhanced avalanche photodiode operating at 1.06 µm”, presented at the 17th
Annual Meeting of the IEEE Lasers and Electro-Optics Society (2004)
14. Karve, G., Zheng, X., Holmes, A.L., Jr., Campbell, J.C., Kinsey, G.S., Boisvert, J.C., Isshiki,
T.D., Sudharsanan, R., Bethune, D.S., Risk, W.P., “In0.53Ga0.47As/In0.52Al0.48As SACM
APDs for single photon detection”, presented at the 16th Annual Meeting of the IEEE Lasers and
Electro-Optics Society, (2003)
15. X. Sun, S. Wang, R. Sidhu, X. G. Zheng, X. Li, J. C. Campbell, and A. L. Holmes, Jr., “MBE
Growth and Device Performance of GaAsSb Resonant-Cavity-Enhanced Avalanche Photodiodes
with Separate Absorption, Charge and Multiplication Regions”, presented at the 2002 Electronic
Materials Conference, Santa Barbara, CA, USA, paper D3, June 2002.
16. J. B. Hurst, X. G. Zheng, X. Sun, S. Wang, Joe C. Campbell, and Archie L. Holmes, “Long
Wavelength InGaAs/InAlAs/InP-GaAs/AlGaAs Avalanche Photodiode Implemented by Direct
Wafer Bonding”, presented at the 2002 Electronic Materials Conference, Santa Barbara, CA,
USA, paper K4, June 2002.
17. Rubin Sidhu, Xiaoguang Sun, and Archie L. Holmes, “Influence of Growth Parameters on
Antimony Incorporation During Molecular Beam Epitaxy of III-Arsenide-Antimonides”,
presented at the 2002 Electronic Materials Conference, Santa Barbara, CA, USA, paper R4, June
2002.
18. Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, and Archie L. Holmes, “Analysis of
Rapid Thermal Annealing of MBE–Grown GaIn(N)As Quantum Wells with GaNAs Barriers”,
presented at the 2002 Electronic Materials Conference, Santa Barbara, CA, USA, paper HH8,
June 2002.
19. S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. Zheng, A. L. Holmes, J. C. Campbell, A. S.
Huntington and L. A. Coldren “Low-Noise InP-based Avalanche Photodiodes with an Impact-
Ionization-Engineered Multiplication Region”, presented at the 2002 LEOS Annual Meeting,
paper WP3.
20. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and characterization of Ga0.8In0.2(N)As
quantum wells with GaNxAs1–x(0.05) barriers by plasma-assisted molecular beam epitaxy”,
presented at the North American MBE Conference 2001, Providence, RI.
21. G.S. Kinsey, R. Sidhu, A.L. Holmes, Jr., J.C. Campbell, and A.G. Dentai, “High Speed
Waveguide Avalanche Photodetectors”, presented at the Device Research Conference 2001,
Notre Dame, IN, June 2001
22. H. Htoon, D. Kulik, W. Wasicek, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K.
Shih,"Cross-sectional Nano-Photoluminescence Studies of Self Assembled Quanutm Dots." ,
APS March Meeting, Minneapolis (2000)
23. J.C. Campbell, A.L. Holmes, Jr., and R.D. Dupuis, “Ultra low-noise avalanche Photodetectors
and AlxGa1-xN/GaN photodetectors”, presented at the 24th Workshop on Compound
Semiconductor
24. Joe C. Campbell, Shuling Wang, X.G. Xheng, G.S. Kinsey, A.L. Holmes, Jr., X.Sun, R. Shidu,
and P.Yuan, “Ultra-Low Noise Avalanche Photodiodes”, presented at Physics and Simulation of
Optoelectronic Devices IX, San Jose, CA, USA, 22-26 January 2001.
25. Sridhar Govindaraju and Archie L. Holmes, Jr., “Growth and Characterization of
Ga0.8In0.2(N)As Quantum Wells with GaNxAs1-x (x 0.05) barriers by Plasma-Assisted
Archie Holmes, Jr.
Page 22
MBE”, presented at the 20th Annual North American Molecular Beam Epitaxy Conference,
Providence, RI, October 2001.
26. Archie L. Holmes, Jr., R.P. Mirin, Y.J. Chiu, S.P. DenBaars, and J.E. Bowers, "1.55 Micron
In-Plane Lasers with p-Al0.7Ga0.3As Cladding Layers", oral presentation, LEOS 1997, paper
TuQ4, San Francisco, CA., November 1997.A.L. Holmes, M.E. Heimbuch, , C.M. Reaves, S.P.
DenBaars, and L.A. Coldren, "Strained and Unstrained InxGa1-xAs/InP and
InxGa1-xAsyP1-y/InP Quantum Well grown by Non-Hydride MOCVD with TBA and TBP,"
oral presentation, Electronic Materials Conference, Santa Barbara CA, June 1993.
28. S. Wang, X. Sun, X.G. Zheng, A.L. Holmes, Jr., J.C. Campbell, and P. Yuan, “Avalanche
photodiodes with an impact-ionization-engineered multiplication region”, presented at the Lasers
and Electro-Optics Society 2000 Annual Meeting, paper MA1
29. J.C. Campbell, H. Nie, C. Lenox, P. Yuan, A.L. Holmes, Jr., B.G. Streetman, “High-speed, low-
noise avalanche photodiodes”, oral presentation, Optical Fiber Communication Conference,
Baltimore, MD, 2000.
30. H. Htoon, D. Kulik, W. Wasick, C.K. Shih, O. Baklenov, A.L. Holmes, Jr., “Structure of Excited
States and Quantum DeCoherence in Self-Assembled Semiconductor Quantum Dots”, oral
presentation, Fall 2000 MRS Conference, paper J5.7, Boston, MA, November 2000.
31. X.-D. Wang, N. Liu, C.K. Shih, S. Govindaraju, A.L. Holmes, Jr., “Interlayer Spatial Correlations
in Self-Assembled Quantum Dots: A Scanning Probe Microscopy Study”, oral presentation, Fall
2000 MRS Conference, paper J6.9, Boston, MA, November 2000.
32. Sridhar Govindaraju, Rubin Shidu, and A.L. Holmes, Jr., “MEE-Grown InGaAs Quantum Dots
Embedded in an InxGa1-xAs (x 0.2) Matrix for 1.3 m emission”, oral presentation, Fall 2000
MRS Conference, paper J9.8, Boston, MA, November 2000.
33. S. Wang, X. Sun, X.G. Zheng, A. Holmes, Jr, J. Campbell, P. Yuan, “Avalanche Photodiodes
with an Impact-Ionization-Engineered Multiplication Region”, oral presentation, LEOS 2000,
paper MA1, Rio Grande, Puerto Rico, November 2000.
34. G. Kinsey, D. Gotthold, A. Holmes, and J. Campbell, “GaNAs Avalanche Photodiodes Operating
at 1.064 m”, oral presentation, LEOS 2000, paper MA3, Rio Grande, Puerto Rico, November
2000.
35. David W. Gotthold, Sridhar Govindaraju, Archie L. Holmes, Jr, and Ben G. Streetman, “Growth
of GaInNAs by Plasma Assisted Molecular Beam Epitaxy”, presented at the Spring 2000 MRS
Conference, San Francisco, CA, April 1999.
36. Ning Liu, Chih-Kang Shih, Oleg Baklenov, Archie L. Holmes Jr., "Cross-sectional Scanning
Tunneling Microscopy Studies of Size, Shape, Strain, and Composition Profile of Self-
Assembled InGaAs Quantum Dots", Talk I3.6 presented at the Fall 1999 MRS Conference,
November 29 - December 3, 1999, Boston.
37. H. Htoon, Hongbin Yu, D. Kulik, J. Keto, C.K. Shih. O. Baklenov, and A.L. Holmes Jr., "Nano-
photoluminescence studies of self-assembled quantum dots”, Poster I7.27 presented at the Fall
1999 MRS Conference, November 29 - December 3, 1999, Boston.
38. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., "Size, Shape, Composition Inhomogeneities
of In0.5Ga0.5As QDs Grown by Migration Enhanced Epitaxy", The 46th International Symposium
and Topical Conferences of the American Vacuum Society, October 25-29, 1999, Seattle,
Washington.
39. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., B. G. Streetman, "Cross-sectional Scanning
tunneling microscopy study of InGaAs/GaAs quantum dots grown by migration Enhanced
Archie Holmes, Jr.
Page 23
epitaxy", Centennial Meeting of The American Physical Society, March 20-26, 1999, Atlanta,
Georgia.
40. N. Liu, C. K. Shih, O. Baklenov, A. L. Holmes Jr., and B. G. Streetman, "Cross-sectional
Scanning tunneling microscopy study of In0.5Ga0.5As/GaAs quantum dots grown by Migration
enhanced epitaxy", 26th Conference on the Physics and Chemistry of Semiconductor Interfaces,
January 17-21, 1999, San Diego, California.
41. H. Htoon, D. Kulik, W. Wasicek, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K.
Shih,"Cross-sectional Nano-Photoluminescence Studies of Self Assembled Quanutm Dots." ,
APS March Meeting, Minneapolis (2000)
42. H. Htoon, Hongbin Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L Holmes Jr. and C. K. Shih,
"Nanoscopic Spectroscopy of Self-Assembled Quantum Dot:Inter-Dot Population Shuffling and
its Effects on Many-Body States", APS Centennial Meeting, Atlanta (1999).
43. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, Jr., B.G. Streetman, and J.C. Campbell, "High
Speed Quantum-Dot Resonant-Cavity SACM Avalanche Photodiodes Operating at 1.06 m",
presented at the Device Research Conference, Santa Barbara, CA, June 1999.
44. P. Yuan, O. Baklenov, H. Nie, A.L. Holmes, B.G. Streetman, and J.C. Campbell, “High-Speed
quantum-dot resonant-cavity SACM avalanche photodiodes operating at 1.06 m”, presented at
the 1999 LEOS Summer Topical Meetings.
45. J.C. Campbell, A.L. Holmes, Jr., and R.D. Dupuis, “Ultra low-noise avalanche Photodetectors
and AlxGa1-xN/GaN photodetectors”, presented at the 24th Workshop on Compound
Semiconductor Devices and Integrated Circuits, Aegean Sea, Greece, May 2000.
46. H. Nie, C. Lenox, G. Kinsey, P. Yuan, A. L. Holmes, B. G. Streetman, and J. C. Campbell, "High
speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes",
Optical Fiber Conference, San Diego, CA, 1999.
47. H. Nie, C. Lenox, G. Kinsey, P. Yaun, A.L. Holmes, Jr., B.G. Streetman, J.C. Campbell,
"Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge, Multiplication Avalanche
Photodiodes", oral presentation, LEOS 1998, paper TuJ4, Orlando, FL., December 1998.
48. C. Lenox, H. Nie, P. Yuan, G. Kinsey, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., B.G.
Streetman, “Thin Multiplication-Region InAlAs Homojunction Avalanche Photodiodes Grown
on InP by MBE,” 40th Electronic Materials Conference, paper G7, Charlottesville, Virginia, June
24-26, 1998.
49. J.M. Reifsnider, D.W. Gotthold, A.L. Holmes, Jr., B.G. Streetman, "Improved Quality of GaN
Films Grown by MBE on Sapphire", 16th North American Molecular Beam Epitaxy Conference,
paper I.3, Ann Arbor, MI., 1997.
50. C. Lenox, H. Nie, P. Yuan, G. Kinsey, C. Hansing, J.C. Campbell, A.L. Holmes, Jr., B.G.
Streetman, “Growth of In0.53(AlxGa1-x)0.47As Avalanche Photodiodes on InP by MBE,” accepted
for presentation at the 17th North American Conference on Molecular Beam Epitaxy, University
Park, Pennsylvania, October 4-7, 1998.
51. O. Baklenov, H. Nie, A. Holmes Jr., J. Campbell, B. Streetman, "Long-wavelength luminescence
from In0.5Ga0.5As/GaAs Quantum Dots grown by Migration Enhanced Epitaxy" accepted for
presentation at the 17th North American Conference on Molecular Beam Epitaxy, University
Park, Pennsylvania, October 4-7, 1998.
52. S.P. DenBaars, A.L. Holmes, Jr., M.E. Heimbuch, , and C.M. Reaves, "Low Threshold Strained
InxGa1-xAsyP1-y/InP Quantum Well Lasers Grown with TBA and TBP," oral presentation, Fifth
European Workshop on MOVPE, Malmo, Sweden, June 1993.
Archie Holmes, Jr.
Page 24
53. M.E. Heimbuch, A.L. Holmes, Jr., C.M. Reaves, M.P. Mack, S.P. DenBaars, and L.A. Coldren,
"Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP) for the MOCVD Growth of Low
Threshold 1.55 µm InxGa1-xAs/InP Quantum Well Lasers," oral presentation, Organometallic
Vapor Phase Epitaxy Workshop, Palm Springs, CA, United States, March 1993.
54. I-H. Tan, C. Reaves, J.J. Dudley, A.L. Holmes, D.I. Babic, E.L. Hu, J.E. Bowers, and S.P.
DenBaars, "Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs
Interfaces," oral presentation, Sixth International Conference on Indium Phosphide and Related
Materials, Santa Barbara CA, United States, March 27-31 (1994).
55. D.A. Tauber, R. Spickermann, R. Nagarajan, T. Reynolds, A.L. Holmes, Jr., and J.E. Bowers,
"Distributed Microwave Effects in High Speed Semiconductor Lasers", oral presentation, IEEE
MTT-S International Microwave Symposium Digest, paper TU1C-1, San Diego, CA, May 22-28
(1994).
56. R. Nagarajan, R. Yu, T. Reynolds, A. Holmes, J.E. Bowers, and Steve DenBaars, "Cryogenic
Microwave Optical Sources", Invited Paper, Engineering Foundation Third Conference on High
Speed Optoelectronic Devices for Communications and Interconnects, San Luis Obispo, CA,
August 14-18 (1994).
57. D.A. Tauber, R. Spickermann, R. Nagarajan, T. Reynolds, A.L. Holmes, Jr., and J.E. Bowers,
"Microwave Propagation Effects in Directly Modulated Semiconductor Lasers", oral
presentation, GOMAC '94 (Government Microcircuits Applications Conference), San Diego, CA,
November 7-10 (1994).
58. R. Yu, R. Nagarajan, T. Reynolds, A. Holmes, and J.E. Bowers, "An Ultrahigh Speed Cryogenic
Optical Fiber Link", oral presentation, CLEO 1994, paper CThJ2, Anaheim, CA, May 8-13
(1994).
59. D.A. Tauber, R. Spickermann, R. Nagarajan, T. Reynolds, A.L. Holmes, Jr., and J.E. Bowers,
"Inherent Bandwidth Limits in Semiconductor Lasers due to Distributed Microwave Effects", oral
presentation, CLEO 1994, paper CThB3, Anaheim, CA, May 8-13 (1994).
60. Monique S. Gaffney, Roy S. Smith, Archie L. Holmes, Jr., Casper M. Reaves, and Steven P.
DenBaars, "Improved Composition and Thickness Control of III-V Epitaxy in a Metalorganic
Chemical Vapor Deposition Process", 34th IEEE Conference on Decision and Control (1995).
61. Monique S. Gaffney, Casper M. Reaves, Roy S. Smith, Archie L. Holmes, Jr., Steven P.
DenBaars, "Composition Control in a Metalorganic Chemical Vapor Deposition Process", 13th
World Congress IFAC (1996).
62. M.S. Gaffney, C.M. Reaves, R.S. Smith, A.L. Holmes, Jr., and S.P. DenBaars, "Real-time
Composition Control Techniques in a Metalorganic Chemical Vapor Deposition Process",
Materials Research Society Symposium Proceedings 406, Pittsburgh, PA, 1995.
63. D.G. Yu, C.-H. Chen, A.L. Holmes, Jr., S.P. DenBaars, and E.L. Hu, “A Comparison of Ion
Damage in GaAs and InP”, presented to Micro and NanoEngineering 1996.
64. D. Tauber, M. Horita, A.L. Holmes, Jr., B.I. Miller, J. Piprek, and J.E. Bowers, “InGaAsP Metal
Fused Microstrip Laser”, Engineering Foundation High Speed Optoelectronics Conference,
Devices and Systems, Snowbird, Utah, August 1996.
65. M. Horita, D.A. Tauber, A.L. Holmes, Jr., B.I. Miller, and J.E. Bowers, “Metal Fused Microstrip
InGaAsP/InP MQW Lasers”, Technical Report of the Institute of Electronics, Information, and
Communications Engineers, ED96-70, OPE96-36, LQE96-38, p. 19, Tokyo, Japan, July 1996
66. D. Tauber, M. Horita, A.L. Holmes, Jr., B.I. Miller, and J.E. Bowers, “The Microstrip Laser”,
Proceedings of the Integrated Photonics Research Conference, Boston, MA, April 1996.
Archie Holmes, Jr.
Page 25
GRADUATE STUDENT RESEARCH
Dissertations Completed Under Faculty Member's Supervision
University of Texas at Austin
1. Oleg Baklenov (Electrical and Computer Engineering)
2. David Gotthold (Materials Science and Engineering), joint with Ben Streetman
3. Jason Reifsnider (Electrical and Computer Engineering)
4. Sridhar Govindaraju (Materials Science and Engineering)
5. Xiaoguang Sun (Electrical and Computer Engineering)
6. Rubin Shidu (Electrical and Computer Engineering)
7. Mike Oye (Materials Science and Engineering)
8. Jeff Hurst (Electrical and Computer Engineering)
The University of Virginia
1. Baile Chen (Electrical and Computer Engineering)
Theses/Reports Completed Under Faculty Member's Supervision
University of Texas at Austin
1. Katie Lipson (Electrical and Computer Engineering)
2. Sam Lipson (Electrical and Computer Engineering)
References: Available upon request