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Applying X-RayApplying X-Ray

Difraction in MaterialDifraction in Material

AnalysisAnalysis

Dr. Ahmed El-NaggarDr. Ahmed El-Naggar

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IntroductionX-Ray diffraction techniquesSome X-Ray diffraction applicationsSummary

Outline

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I) Introduction

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II) X-Ray diffraction techniques

I- High-resolution

Mostly used for near-perfect epitaxial thin films andsingle crystals.

- Medium resolution !rimarily used for thin films that are textured

epitaxial" textured polycrystalline.

#lso can $e used for polycrystalline and amorphousmaterials.

%- &o' resolution Mostly used for polycrystalline as 'ell as

amorphous materials

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(motoried mo*ements of the Sample

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Low Resolution applications+ ,exure

analysis" Stress analysis" and - scan"

phase analysis

Medium Resolution applications+ - scan"

phase analysis,Stress analysis" and

Reflecti*ity.

High Resolution applications+ Roc/ingcur*e 0-scan)" Reciprocal space map" -

scan" phase analysis, Stress analysis" and

Reflecti*ity

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III) Some X-Ray diffraction applications

1-scan" phase analysis

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2rom -2 ( -2)scan the ensem$le of d- spacings 03 d3

s) 04sing 5ragg6s la' to get them) and intensities 03 I3 s)

is sufficiently in order to identify phases

!hase determination can $e performed $y a comparison

of a set of experimental d6s and I6s'ith a data$ase of d-I

files

7ata$ase of d-I files 'ere named !o'der 7iffraction 2ile

0!72) data$ase 0started 8989 and 'as containing :;;;

compounds) " $ut from 89enter for 7iffraction 7ata 0I>77) 'hich

contains a$out %;;";;; pattern

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Indexing and lattice constants determination

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?.5.,he unit cell *olume @0 for >u$ic) A a%" for

tetragonal A ac" and for hexagonal A ;.=(( ac

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Reflecti*ity

It is proceeded at lo' angles of incidence 0) to study the

surface only 0BIXR7)

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Reciprocal Space Maps

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2rom reciprocal space mapping 0R&M)+ composition"

thic/ness 0at least C; nm)" mismatch" mosacity" and defects

profile.

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Roc/ing cur*e measurementD

composition and thic/ness

determination

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HRXR7 0;;:) Roc/ing cur*e for sample 8(=% ofIn;.C%#l;.:

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2or example+ ,o measure layer composition for Iny#l8-y#s 'e needonly E50difference $et'een 5ragg angle of the su$strate and epilayer)

and use the follo'ing relation 0comes from @egard6s la') for symmetric

measurements+

Symmetric measurement is only sensiti*e to the lattice mismatch

perpendicular to the su$strate1layer interface

Fhere" for symmetric measurements:

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#lso" one can use

,he layer thic/ness can $e determined from the relation:

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,he $est 'ay to determine layercompositions andthic/nesses+ is to compare the experimental roc/ing cur*e tosimulated cur*es. ,here are some commercial programs for that purpose

0i.e. R#7S 0Roc/ing cur*e #nalysis $y 7ynamical Simulation)

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Summary

XR7 is the main method for crystallographiccharacteriation for $oth $ul/ and thin film materials

,he diffraction pattern is li/e a finger print of the crystalstructure.

2rom the diffraction pattern of -2 ( -2)scan + phaseanalysis

2rom roc/ing cur*es+ composition" thic/ness 0%;- 8;;;nm)" mismatch.

2rom reciprocal space mapping0R&M)+ composition"thic/ness 0at least C; nm)" mismatch" mosacity" anddefects profile.

2rom Reflecti*ity measurements+ composition" thic/ness0C-8C; nm)" and interface roughness.

2rom !ole figures+ >omposition" orientation 'ith respectto su$strate and phase analysis