AOS Semiconductor Reliability · PDF fileAOS Reliability Report 3 High Temperature Gate Bias...

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1 AOS Semiconductor Product Reliability Report AO3160, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com Feb. 2018

Transcript of AOS Semiconductor Reliability · PDF fileAOS Reliability Report 3 High Temperature Gate Bias...

Page 1: AOS Semiconductor Reliability · PDF fileAOS Reliability Report 3 High Temperature Gate Bias (HTGB) & High Temperature Reverse Bias (HTRB) HTGB burn-in stress is used to stress gate

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AOS Semiconductor Product Reliability Report

AO3160, rev B

Plastic Encapsulated Device

ALPHA & OMEGA Semiconductor, Inc www.aosmd.com

Feb. 2018

Page 2: AOS Semiconductor Reliability · PDF fileAOS Reliability Report 3 High Temperature Gate Bias (HTGB) & High Temperature Reverse Bias (HTRB) HTGB burn-in stress is used to stress gate

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This AOS product reliability report summarizes the qualification result for AO3160. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO3160 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality.

I. Reliability Stress Test Summary and Results

Note: The reliability data presents total of available generic data up to the published date. Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020

II. Reliability Evaluation FIT rate (per billion): 3.82 MTTF = 29919 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours.

Failure Rate = Chi2 x 10

9 / [2 (N) (H) (Af)] = 3.82

MTTF = 109 / FIT =29919 years

Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]

Acceleration Factor ratio list:

55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C

Af 259 87 32 13 5.64 2.59 1

Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16

k = Boltzmann’s constant, 8.617164 X 10-5

eV / K

Test Item Test Condition Time Point Total

Sample Size

Number of

Failures

Reference Standard

HTGB Temp = 150°C ,

Vgs=100% of Vgsmax 168 / 500 /

1000 hours 462 pcs 0 JESD22-A108

HTRB Temp = 150°C ,

Vds=100% of Vdsmax 168 / 500 /

1000 hours 462 pcs 0 JESD22-A108

Precondition (Note A)

168hr 85°C / 85%RH + 3 cycle reflow@260°C

(MSL 1) - 4620 pcs 0 JESD22-A113

HAST

130°C , 85%RH, 33.3 psia,

Vds = 80% of Vdsmax up to 42V

96 hours 693 pcs 0 JESD22-A110

H3TRB 85°C , 85%RH,

Vds = 80% of Vdsmax up to 100V

1000 hours 693 pcs 0 JESD22-A101

Autoclave 121°C , 29.7psia,

RH=100% 96 hours 924 pcs 0 JESD22-A102

Temperature Cycle

-65°C to 150°C , air to air,

1000cycles 924 pcs 0 JESD22-A104

HTSL Temp = 150°C 1000 hours 693 pcs 0 JESD22-A103

IOL Tj = 100°C 15000 cycles 693 pcs 0 AEC Q101


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