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Transcript of AO4407
AO440730V P-Channel MOSFET
General Description Product Summary
VDS
ID (at VGS=-20V) -12A
RDS(ON) (at VGS=-20V) < 13mΩ RDS(ON) (at VGS =-10V) < 14mΩ RDS(ON) (at VGS =-5V) < 30mΩ
100% UIS Tested100% Rg Tested
SymbolVDS
The AO4407 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON). This device is ideal for load switchand battery protection applications.
VMaximum UnitsParameter
Absolute Maximum Ratings T A=25°C unless otherwise noted
-30V
Drain-Source Voltage -30
SOIC-8
Top View Bottom View
DD
DD
SS
SG
G
D
S
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbolt ≤ 10s
Steady-State
Steady-State RθJLMaximum Junction-to-Lead °C/W°C/WMaximum Junction-to-Ambient A D
167524
TA=25°C
TA=70°C
Power Dissipation BPD
Avalanche energy L=0.3mH C
Pulsed Drain Current C
Continuous DrainCurrent
TA=25°C
mJ
Avalanche Current C
101
A26
AID
-12
-10
-60
V
V±25Gate-Source Voltage
Drain-Source Voltage -30
UnitsParameter Typ Max°C/WRθJA
3159
40Maximum Junction-to-Ambient A
2TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
W3.1
SOIC-8
Top View Bottom View
DD
DD
SS
SG
G
D
S
Rev 13: July 2010 www.aosmd.com Page 1 of 5
AO4407
Symbol Min Typ Max Units
BVDSS -30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
IGSS ±100 nA
VGS(th) Gate Threshold Voltage -1.7 -2.25 -2.8 V
ID(ON) -60 A
8.5 13 mΩ10 14
TJ=125°C 12 19
19 30 mΩgFS 27 S
VSD -0.72 -1 V
IS -4 A
Ciss 2060 2600 pF
Coss 370 pF
Crss 295 pF
Rg 1.2 2.4 3.6 Ω
Qg 24 30 36 nC
Qgs 4.6 nC
Qgd 10 nC
tD(on) 11 ns
t 9.4 ns
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
mΩ
Electrical Characteristics (T J=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
IDSS µA
VDS=VGS ID=-250µA
VDS=0V, VGS= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IS=-1A,VGS=0V
VDS=-5V, ID=-10.5A
VGS=-5V, ID=-7A
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
VGS=-20V, ID=-12A
V =-10V, V =-15V,
Gate resistance VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-12AGate Source Charge
Gate Drain Charge
RDS(ON) Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
tr 9.4 ns
tD(off) 24 ns
tf 12 ns
trr 30 40 nsQrr 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Turn-On Rise Time VGS=-10V, VDS=-15V,
RL=1.25Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 13: July 2010 www.aosmd.com Page 2 of 5
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1752
10
018
0
20
40
60
80
1 2 3 4 5 6
-ID(A
)
VGS(Volts)Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0 5 10 15 20
RD
S(O
N)(m
ΩΩ ΩΩ)
-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Nor
mal
ized
On-
Res
ista
nce
Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-10VID=-12A
VGS=-5VID=-7A
25°C125°C
VDS=-5V
VGS=-5V
0
20
40
60
80
0 1 2 3 4 5
-ID
(A)
-VDS (Volts)Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-6V-10V
-4.5V
-5V
VGS=-10V
40
0
20
40
60
80
1 2 3 4 5 6
-ID(A
)
VGS(Volts)Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0 5 10 15 20
RD
S(O
N)(m
ΩΩ ΩΩ)
-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I S(A
)
-VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Nor
mal
ized
On-
Res
ista
nce
Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-10VID=-12A
VGS=-5VID=-7A
5
10
15
20
25
30
2 4 6 8 10
RD
S(O
N)(m
ΩΩ ΩΩ)
-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C125°C
VDS=-5V
VGS=-5V
ID=-12A
25°C
125°C
0
20
40
60
80
0 1 2 3 4 5
-ID
(A)
-VDS (Volts)Fig 1: On-Region Characteristics (Note E)
VGS=-3.5V
-4V
-6V-10V
-4.5V
-5V
VGS=-10V
Rev 13: July 2010 www.aosmd.com Page 3 of 5
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30
-VG
S(V
olts
)
Qg (nC)Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Cap
acita
nce
(pF
)
-VDS (Volts)Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=-15VID=-12A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pow
er (
W)
Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I D(A
mps
)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON) limited
TJ(Max)=150°CTA=25°C
100µs
10ms
0
2
4
6
8
10
0 5 10 15 20 25 30
-VG
S(V
olts
)
Qg (nC)Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
Cap
acita
nce
(pF
)
-VDS (Volts)Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=-15VID=-12A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pow
er (
W)
Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I D(A
mps
)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON) limited
TJ(Max)=150°CTA=25°C
100µs
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθθ θθJ
AN
orm
aliz
ed T
rans
ient
T
herm
al R
esis
tanc
e
Pulse Width (s)Figure 12: Normalized Maximum Transient Thermal Imp edance (Note F)
D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJA
TonT
PD
In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Single Pulse
Rev 13: July 2010 www.aosmd.com Page 4 of 5
AO4407
-
+VDC
Ig
Vds
DUT
-
+VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t trd(on)
ton
td(off) t f
toff
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds DSS
2E = 1/2 LIARAR
-
+VDC
Ig
Vds
DUT
-
+VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t trd(on)
ton
td(off) t f
toff
VddVgs
Id
Vgs
Rg
DUT
-
+VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+VDC
DUT
L
Vds
Vgs
Vds
IsdIsd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I F
AR
DSS
2E = 1/2 LI
dI/dt
I RM
rr
VddVdd
Q = - Idt
ARAR
t rr
Rev 13: July 2010 www.aosmd.com Page 5 of 5