Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir...

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Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1 , Vladimir Cindro 1 , Andrej Gorišek 1 , Gregor Kramberger 1 , Marko Milovanović 1 , Marko Mikuž 1,2 , Marko Zavrtanik 1 1 Jožef Stefan Institute, Ljubljana, Slovenia 2 Faculty of Mathematics and Physics, University of Ljubljana, Slovenia ______________________________________________________________________________________________________ I. Mandić, 19th RD50 Workshop, CERN, 21 – 23 November 2011 1

description

Detectors: p-type, FZ, 320 µm thick, 75 µm strip pitch, 1x1 cm 2, V fd ~ 170 V produced by Hamamatsu ATLAS07-PSSSD_Series I, batch number: VXX73414  6 inch FZ wafer, but: ”wafer producer has a control of oxygen content to an order of ions/cm 3...“…. Y. Unno, private communication detectors irradiated with pions: 1) A07, W19, Z3, P21: Φ = 1.65∙10 14 π /cm 2 = 1.8 ∙10 14 n eq /cm 2, irrad. time: 2 days 2) A07, W49, Z1, P19: Φ = 4.14∙10 14 π /cm 2 = 4.6 ∙10 14 n eq /cm 2, irrad. time: 4.5 days 3) A07, W22, Z3,P1: Φ = 1.43∙10 15 π /cm 2 = 1.6 ∙10 15 n eq /cm 2, irrad. time: 16 days  detectors at T ~ 26 ° C during irradiation detectors irradiated with neutrons: W45-Z3-P15, W19-Z3-P18, W22-Z3-P3, W16-Z3-P21 Fluences: 2, 5, 10 and 50∙10 14 n eq /cm 2 irradiation times less than 1 hour, T < 45 ° C. ______________________________________________________________________________________________________ I. Mandić, 19th RD50 Workshop, CERN, 21 – 23 November

Transcript of Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir...

Page 1: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

Annealing of CCE in HPK strip detectors irradiated with

pions and neutrons

Igor Mandić1, Vladimir Cindro1, Andrej Gorišek1, Gregor Kramberger1, Marko Milovanović1, Marko Mikuž1,2, Marko Zavrtanik1

1Jožef Stefan Institute, Ljubljana, Slovenia2 Faculty of Mathematics and Physics, University of Ljubljana, Slovenia

______________________________________________________________________________________________________ I. Mandić, 19th RD50 Workshop, CERN, 21 – 23 November 2011 1

Page 2: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

• ATLAS07 mini strip detectors produced by Hamamatsu irradiated with pions at PSI in 2010 and with neutrons in Ljubljana • charge collection measurements with 90Sr source on SCT128 setup in Ljubljana

• measurements repeated after several annealing steps at 60°C

• update of results with pion irradiated detectors and comparison with neutrons

annealing studies for neutron irradiation published in: I. Mandić et al., NIM A 629 (2011) 101–105 annealing studies with pion irradiated detectors accepted for publication in JINST

• first results with mixed (pion + neutron) irradiated detector

Introduction:

______________________________________________________________________________________________________ I. Mandić, 19th RD50 Workshop, CERN, 21 – 23 November 2011 2

Page 3: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

Detectors:

• p-type, FZ, 320 µm thick, 75 µm strip pitch, 1x1 cm2, Vfd ~ 170 V produced by Hamamatsu

• ATLAS07-PSSSD_Series I, batch number: VXX73414 6 inch FZ wafer, but: ”wafer producer has a control of oxygen content to an order of 1017 ions/cm3. ..“…. Y. Unno, private communication

• detectors irradiated with pions:

1) A07, W19, Z3, P21: Φ = 1.65∙1014 π/cm2 = 1.8 ∙1014 neq/cm2 , irrad. time: 2 days

2) A07, W49, Z1, P19: Φ = 4.14∙1014 π /cm2 = 4.6 ∙1014 neq/cm2, irrad. time: 4.5 days

3) A07, W22, Z3,P1: Φ = 1.43∙1015 π /cm2 = 1.6 ∙1015 neq/cm2 , irrad. time: 16 days

detectors at T ~ 26 ° C during irradiation

• detectors irradiated with neutrons: W45-Z3-P15, W19-Z3-P18, W22-Z3-P3, W16-Z3-P21

Fluences: 2, 5, 10 and 50∙1014 neq/cm2 irradiation times less than 1 hour, T < 45 ° C.

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Page 4: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

significantly lower Vfd for pions compared to neutrons

lower acceptor introduction rates for pion irradiation expected in oxygenated detector material

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______________________________________________________________________________________________________ I. Mandić, 19th RD50 Workshop, CERN, 21 – 23 November 2011 5

• gc = 0.017 cm-1 measured for FZ-p type material irradiated with neutrons (G. Kramberger et al,. NIMA 612 (2010) 288-295, V. Cindro et al., NIMA 599 (2009) 60-65)

• pions compatible with gc ~ 0.005 cm-1

significantly smaller than for neutrons smaller than gc = 0.013 cm-1 measured for FZ-p type material irradiated with pions (G. Kramberger et al,. NIMA 612 (2010) 288-295) lower Vfd increase after proton irradiation of HPK sensors measured also by K. Hara et al., Nucl. Instr. Meth. A 636 (2011) S83-S89.

• Vfd (estimated from the kink in the Q-V plot) after 80 minutes at 60°C

eqcfd gwqV 0

20

2

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• with τY = 1100 min (G. Kramberger et al.) better agreement with gY = 0.02 cm-1 than with gY ~ 0.05 cm-1 measured for p-type FZ material irradiated with pions (by G. Kramberger et al.)

• (other parameters used in theHamburg model: gc ~ 0.005 cm-1 , Vfd,0 = 170 V, ga = 0.018 cm-1 , τa = 19 min)

• compare with Hamburg model, long term annealing described by: ))1/(11(Y

Yeqtg

pions

Page 7: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

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• rise of CCE characteristic for charge multiplication observed after long annealing times longer than after neutron irradiation

multiplication

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• multiplication obvious in detectors irradiated with pions after longer annealing times then after irradiation with neutrons:

smaller introduction rates for pions takes longer to reach sufficient Neff for high enough peak electric field

Neff ~ 4e13 cm-3 at annealing points where multiplication starts to be obvious

Pions: t ~ 5000 minutes, V ~ 1300 V Neutrons: t ~ 500 minutes, V ~ 1300 V

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0

0max

2

VNqE eff• pad detector geometry, uniform Neff:

multiplication“threshold”

• annealing of Neff according to Hamburg model

• multiplication after: - few hundred minutes on 60°C for neutrons (Φeq = 1e15 n/cm2 )

- few thousand minutes on 60°C for pions (Φeq = 1.6e15 n/cm2 ) agrees with measurements

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Detector current

Near breakdown, unstable Multiplication not as obvious for pions as for neutrons higher Neff (i.e. Emax) reached with neutrons

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Noise

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• no large multiplication no significant increase of noise

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• at 500 V CCE loss after long annealing at 60°C not very bad max. 20%

• at higher voltages smaller losses

pions

Summary annealing plots

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Mixed irradiation

• mixed: 1. Φeq = 4.6e14 n/cm2 , pions, annealed for 41 h at 60°C Neff ~ 1.1e13 cm3

2. Φeq = 5.4e14 n/cm2 , neutrons, annealed 80 min. at 60°C Neff ~ 2.3e13 cm3 Sum: Neff ~ 3.4e13 cm3

• neutrons: Φeq = 1e15 n/cm2 , annealed for 80 min. at 60°C Neff ~ 3.3e13 cm3

• trapping: mixed: τe = 2.3 ns, τh = 1.6 ns neutrons: τe = 2.3 ns, τh = 2.2 ns

result consistent: similar Neff and similar τe,h ==> similar collected charge

not very different

Page 14: Annealing of CCE in HPK strip detectors irradiated with pions and neutrons Igor Mandić 1, Vladimir Cindro 1, Andrej Gorišek 1, Gregor Kramberger 1, Marko.

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Conclusions

• in ATLAS07 Hamamatsu p-type mini strip detectors irradiation with pions causes smaller increase of Vfd than irradiation with neutrons• increase of Vfd with long term annealing slower than after irradiation with neutrons

both can be expected for oxygenated FZ material

• after pion irradiation increase of collected charge due to multiplication is observed after longer annealing time and at higher Φeq than in neutron irradiated detectors

because of oxygen higher fluences and longer annealing times are needed to reach sufficiently high space charge concentration and consequently high electric field for significant charge multiplication • expected losses of collected charge due to long term annealing in these detectors are not very severe, especially if bias voltage higher than 500 V is available • mixed irradiations: collected charge as expected