ALM-1522700 – 1100 MHz Low Noise, High Gain, High Linearity Balanced Amplifier Module

Data Sheet

Description

Avago Technologies’ ALM-1522 is a low noise, high gain and high linearity balanced amplifier module operating in the 700MHz to 1100MHz frequency range. The exception-al noise and linearity performance are achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.

The ALM – 1522 is housed in a miniature 5.0 x 6.0 x 1.1 mm3 22-lead multiple-chips-on-board (MCOB) module package. The compact footprint and low profile makes the ALM-1522 an ideal choice for Wireless Infrastructure Basestation Tower-Mounted-Amplifiers (TMA), Radiocard Receivers, Multi-Carrier Driver Amplifiers for GSM, CDMA, W-CDMA, TD-SCDMA base stations operating in the 700MHz to 1100MHz band.

Component Image

Surface Mount MCOB5.0 x 6.0 x 1.1mm3 22-lead

Top VIew

BoTToM VIew

Note: Package marking provides orientation and identification.“1522” = Device Part Number“WWYY” = Work week and year of

manufacture“XXXX” = Assembly lot number

1522WWYYXXXX

Features

• Low noise figure

• High linearity and OP1dB

• 5V supply

• Adjustable current for optimum NF or OIP3

• High gain : 31dB

• Shutdown function

• GaAs E-pHEMT Technology

• Miniature package size : 5.0 x 6.0 x 1.1 mm3

• Tape-And-Reel packaging option available

• MSL-3 and Lead-free

• Meets ESD 100V Machine Model per EIA/JESD22-A115, and 500V Human Body Model per EIA/JESD22-A114

• Can be used in single-ended or balanced configuration

• Unconditionally stable

• Green/RoHS Compliant

Specifications

900 MHz; 5V, Quiescent Idd=240 mA (typ) per channel Vctrl at 2.7V• 31 dB Gain

• 0.6 dB Noise figure

• 27.7 dBm OP1dB

• 43 dBm OIP3

• 45 dB Reverse Isolation

Applications

• TMA & Front End LNA for GSM, CDMA, W-CDMA, TD-SCDMA base stations.

• Driver amplifier for GSM, CDMA, W-CDMA, TD-SCDMA base stations.

2

product Consistency Distribution Charts[4] [5]

TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, unless otherwise specified.

Absolute Maximum Rating[1] TA=25°C

Symbol parameter Units Absolute Max.

Vdd Supply voltages, bias supply voltage V 5.5

Vctrl Control Voltage V 5.5

Pin,max CW RF Input Power dBm +20

Pdiss Total Power Dissipation [2] W 5.0

Tj Junction Temperature °C 150

TSTG Storage Temperature °C -65 to 150

Thermal resistance

Thermal Resistance [3] (Vdd = 5V, Vctrl1 = Vctrl2 = 2.7V, Idd = 480mA), θjc = 16.5°C/w

Notes:1. Operation of this device in excess of any of

these limits may cause permanent damage.2. Board temperature TB is 25°C. Derate 61mW/°C

for TB>97°C. 3. Thermal resistance measured using Infra-Red

Microscopy Technique.

Figure 1. Gain (dB) Distribution Figure 2. NF (dB) Distribution

Figure 3. oIp3 (dBm) Distribution Figure 4. op1dB (dBm) Distribution

LSL USL

29.5 30 30.5 31 31.5 32 32.5

LSL

27 28 29

Mean = 31 dBCPK = 2.0

Mean = 27.7 dBCPK = 3.8

USL

.4 .5 .6 .7 .8 .9 10.4 0.5 0.6 0.7 0.8 0.9 1.0

USL

.4 .5 .6 .7 .8 .9 10.4 0.5 0.6 0.7 0.8 0.9 1.0

Mean = 0.6 dBCPK = 2.4

LSL

39 40 41 42 43 44

Mean = 43 dBCPK = 3.3

Note:4. Distribution data sample size is 1700 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values

anywhere between the upper and lower limits.5. Measurements are made on a production test boards, which can show a variance of up to 1dB in Gain and OIP3 compared to a soldered-down

demo board. Circuit trace losses have not been de-embedded from actual measurements.

3

electrical Specifications[6][9]

TA = 25°C, Vdd = 5V, Vctrl = 2.7V, RF performance at 900 MHz, given for each of the 2 RF paths, measured on evaluation

board (see Fig. 5) unless otherwise specified.

Symbol parameter and Test Condition Units Min. Typ. Max.

Vdd Supply Voltage V - 5.0 -

Vctrl Control Voltage V - 2.7 -

Idd Quiescent Supply Current mA 180 240 280

Gain Gain dB 29.6 31 32.6

OIP3[7] Output Third Order Intercept Point dBm 39 43 -

NF[8] Noise Figure dB - 0.6 1.0

OP1dB Output Power at 1dB Gain Compression dBm 26.5 27.7 -

S11 Input Return Loss, 50Ω source dB - -10 -

S22 Output Return Loss, 50Ω load dB - -14 -

S12 Reverse Isolation dB - 45 -

ISO1-2 Isolation between RF Input 1 and RF Input 2 dB - 27 -

Notes: 6. Measurement at 900MHz obtained using demo board described in Figure 5.7. 900MHz OIP3 test condition: FRF1 = 900 MHz, FRF2 = 901 MHz with input power of -20 dBm per tone.8. Circuit trace losses have not been de-embedded from actual measurements.9. Use proper bias, board, heatsink and derating designs to ensure maximum junction temperature is not exceeded. See absolute maximum ratings

and application note for more details.

4

Demo Board Schematic

50-Ohms TL

50-Ohms TL

50-Ohms TL

50-Ohms TL

Vsup

ply

Bias

2

C3

Vsen

se38

Bias

1

Vsup

ply

1,2,

19,2

0

match

match

Bias

Bias

1,2,

19,2

0

C5 C1

C6 C8 C10

Module outline

2

5

3,4

6

1,22

7 8 9 10 11

12

13

14,15

16

17,181921 20

Vsup

ply

10Bi

as2

Bias

2

Vsen

se

Bias

1

Vsup

ply

Inputmatch

Interstagematch

Outputmatch

Inputmatch

Interstagematch

Outputmatch

Bias

Bias

Figure 6. evaluation Board Schematic Diagram

ALM-1522 Demo Board Layout

10 1

RF input 1

Ground20-pin Connector

RF input 2

RF output 1

RF output 2

Vsupply 1,2

Pinout Designation

Figure 5. evaluation Board Layout Diagram

Recommended PCB material is 10 mils Rogers RO4350.

Suggested component values may vary according to layout and PCB material.

Single-ended Demo Board Layout

Circuit Symbol Size Description

C1, C10 0805 2.2uF ceramic

C2, C7 0402 Not used

C3, C6 0402 0.1uF ceramic

C4, C9 0402 Not used

C5, C8 0402 0.1uF ceramic

5

ALM-1522 Single-ended Typical performance Curves

Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 5) unless otherwise specified.

Figure 7. Idd vs. Temperature Figure 8. Idd vs. Vctrl and Temperature

Figure 9. NF vs. Frequency and Temperature Figure 10. Gain vs. Frequency and Temperature

Figure 11. oIp3 vs. Frequency and Temperature Figure 12. op1dB vs. Frequency and Temperature

100120

140160180200

220240260

280300

-40 -20 0 20 40 60 80 100Temperature °C

Idd

(mA)

0

50

100

150

200

250

300

350

2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)

Idd

(mA)

0

0.2

0.4

0.6

0.8

1

700 800 900 1000 1100Frequency (MHz)

NF (d

B)

26

27

28

29

30

31

32

33

34

35

700 800 900 1000 1100Frequency (MHz)

Gain

(dB)

33

35

37

39

41

43

45

47

49

700 800 900 1000 1100Frequency (MHz)

OIP3

(dBm

)

24

25

26

27

28

29

30

700 800 900 1000 1100Frequency (MHz)

P1dB

(dBm

)

-40°C25°C85°C

-40°C25°C85°C

-40°C25°C85°C

-40°C25°C85°C

-40°C25°C85°C

6

Figure 13. NF vs. Vctrl and Temperature Figure 14. Gain vs. Vctrl and Temperature

Figure 15. oIp3 vs. Vctrl and Temperature Figure 16. op1dB vs. Vctrl and Temperature

Figure 17. S11 & S22 vs. Frequency (0.1 to 2GHz) Figure 18. S21 & S12 vs. Frequency (0.1 to 2GHz)

0

0.2

0.4

0.6

0.8

1

2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)

NF (d

B)

26

27

28

29

30

31

32

33

34

35

2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)

Gain

(dB)

33

35

37

39

41

43

45

47

49

2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)

OIP3

(dBm

)

24

25

26

27

28

29

30

2 2.2 2.4 2.6 2.8 3 3.2Vctrl (V)

P1dB

(dBm

)

-50

-40

-30

-20

-10

0

10

0 500 1000 1500 2000Frequency (MHz)

S11

(dB)

& S2

2 (d

B)

S11S22

-60

-40

-20

0

20

40

0 500 1000 1500 2000Frequency (MHz)

S21

(dB)

-100

-80

-60

-40

-20

0

S12

(dB)

-40°C25°C85°C

-40°C25°C85°C

-40°C25°C85°C

-40°C25°C85°C

S11S22

7

Figure 19. S11 & S22 vs. Frequency (0.1 to 20GHz) Figure 20. S21 & S12 vs. Frequency (0.1 to 20GHz)

Figure 21. Stability vs. Frequency (0.1 to 20GHz) Figure 22. Channel Isolation vs. Frequency (0.1 to 2GHz)

-50

-40

-30

-20

-10

0

10

0 2 4 6 8 10 12 14 16 18 20Frequency (GHz)

S11

(dB)

& S2

2 (d

B)

-60

-40

-20

0

20

40

0 2 4 6 8 10 12 14 16 18 20Frequency (GHz)

S21

(dB)

-100

-80

-60

-40

-20

0

S12

(dB)

-50

-40

-30

-20

-10

0

0 400 800 1200 1600 2000Frequency (MHz)

Chan

nel I

sola

tion

(dB)

Ch1Ch2

01

23

45

67

89

10

0 4 8 12 16 20Frequency (GHz)

K, M

u, M

u'

KMuMu'

S11S22

S21S12

8

Balanced Amplifier Demo Board Layout

Circuit Symbol Size Description Value

C1, C10 0805 Ceramic capacitor 2.2uF

C3, C5, C6, C8 0402 Ceramic capacitor 0.1uF

C2, C4, C7, C8 0402 Not used

R1, R4 0402 Not used

R2, R3 0402 Resistor 50Ω

Coupler 16.51mmx12.19mm Anaren Xinger II XC0900L-03S

Figure 23. Suggested Balanced Amplifier evaluation Board Layout Diagram

Recommended PCB material is 10 mils Rogers RO4350.

Suggested component values may vary according to layout and PCB material.

Coupler operating frequency specified from 800MHz to 1000MHz

Balanced Demo Board Schematic

50-Ohms TL

50-Ohms TL

50-Ohms TL

50-Ohms TL

Vsup

ply

8Vc

trl

C3

Vsen

se38

Vctr

l

Vsup

ply

1,2,

19,2

0

Inputmatch

Interstagematch

Outputmatch

Inputmatch

Interstagematch

Outputmatch

Bias

Bias

1,2,

19,2

0

C5 C1

C6 C8 C10

Module outline

2

5

3,4

6

1,22

7 8 9 10 11

12

13

14,15

16

17,181921 20Coupler Coupler

R3

R2

RF Input

RF Output

Figure 24. evaluation Board Schematic for Balanced Amplifier

9

Balanced Amplifier Typical performance Curves

Vdd = 5V, Vctrl = 2.7V, Frequency = 900 MHz, measured on evaluation board (see Figure 23) unless otherwise specified.

Figure 25. Balanced mode NF vs. Frequency Figure 26. Balanced mode Gain vs. Frequency

Figure 27. Balanced mode oIp3 vs. Frequency Figure 28. Balanced mode op1dB vs. Frequency

Figure 29. Balanced mode S11 & S22 vs. Frequency (0.1 to 2GHz) Figure 30. Balanced mode S21 and S12 vs. Frequency (0.1 to 2GHz)

S21S12

0

0.2

0.4

0.6

0.8

1

700 800 900 1000 1100Frequency (MHz)

NF (d

B)

26

27

28

29

30

31

32

33

34

35

700 800 900 1000 1100Frequency (MHz)

Gain

(dB)

30

32

34

36

38

4042

44

46

48

50

700 800 900 1000 1100Frequency (MHz)

OIP3

(dBm

)

26

27

28

29

30

31

32

700 800 900 1000 1100Frequency (MHz)

P1dB

(dBm

)

-50

-40

-30

-20

-10

0

10

0 500 1000 1500 2000Frequency (MHz)

S11

(dB)

& S2

2 (d

B)

-60

-40

-20

0

20

40

0 500 1000 1500 2000Frequency (MHz)

S21

(dB)

-100

-80

-60

-40

-20

0S1

2 (d

B)

S11S22

10

Figure 31. Balanced mode S11 & S22 vs. Frequency (0.1 to 6GHz) Figure 32. Balanced mode S21 and S12 vs. Frequency (0.1 to 6GHz)

Figure 33. Balanced mode Stability vs. Frequency (0.1 to 6GHz)

package Dimensions

Laser Marking, POD, Stencil

S21S12

-50

-40

-30

-20

-10

0

10

0 1000 2000 3000 4000 5000 6000Frequency (MHz)

S11

(dB)

& S2

2 (d

B)

-60

-40

-20

0

20

40

0 1000 2000 3000 4000 5000 6000Frequency (MHz)

S21 (

dB)

-100

-80

-60

-40

-20

0

S12 (

dB)

01

23

45

67

89

10

0 1 2 3 4 5 6Frequency (GHz)

K, M

u, M

u'

S11S22

KMuMu'

1522wwYYXXXX

11

part Number ordering Information

part Number No. of Devices Container

ALM-1522-BLKG 100 Antistatic bag

ALM-1522-TR1G 1000 7” Reel

ALM-1522-TR2G 3000 13” Reel

Device orientation

USER FEED DIRECTION

TOP VIEW END VIEWUSERFEED DIRECTION

COVER TAPE

CARRIERTAPE

REEL

1522WWYYXXXX

1522WWYYXXXX

Tape Dimensions

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-1723EN - February 17, 2009

Reel Dimensions

Ø178

.0±

1.0

Ø55.

0±0.

5

SEE DETAIL "X"

65° 45°

60°

Ø51.2±0.3

Slot hole ‘a’

RECYCLE LOGO FRONT VIEW

-0.0+1.5*

8.4

FRONT BACK

FRONT BACK

Ø178.0±1.0

7.9 - 10.9*

Slot hole ‘b’

BACK VIEW

R5.2

R10.65

EMBOSSED RIBSRAISED: 0.25mm, WIDTH: 1.25mm

14.4*MAX.