Alex Lidow Efficient Power Conversion Corporation...Efficient Power Conversion Corporation Alex...
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 1 The eGaN ® FET Journey Continues Efficient Power Conversion Corporation Alex Lidow
Transcript of Alex Lidow Efficient Power Conversion Corporation...Efficient Power Conversion Corporation Alex...
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 1
The eGaN® FET
Journey Continues
Efficient Power Conversion Corporation
Alex Lidow
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 2
Agenda
• Where are we now?
• High Frequency Resonant Converters
• Wireless Power
• Envelope Tracking
• Summary
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 3 F0049, not a controlled doc.; RT001b 2/13/09 www.epc-co.com 3 EPC - The Leader in eGaN® FETs Darnell Power Forum 2012
Buck Converters
Forward Converters
Flyback Converters
Full-Bridge Isolated Converters
Resonant Converters
Wireless Power
High Frequency Buck Converters
for Envelope Tracking
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Resonant Converters
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 5 5
Ref: Y. Ren, M. Xu, J. Sun, and F. C. Lee, “A family of high power density unregulated bus converters,” IEEE Trans. Power Electron., vol. 20, no. 5, pp. 1045–1054, Sep. 2005.
VGS(S1,S3)
VGS(SR1)
VGS(S2,S4)
VGS(SR2)
ILK1
ILK2
4:1
48V 12V
SR1
SR2
Resonant Converter
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eGaN® FET vs MOSFET
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Efficiency Comparison
90
91
92
93
94
95
96
97
98
0 5 10 15 20 25 30 35 40
Eff
icie
nc
y (
%)
Output Current (IOUT)
1.2 MHz MOSFET
1.2 MHz
eGaN
10 W 12 W
14 W
FS = 1.2 MHz, VIN = 48 V, and VOUT = 12 V
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0
2
4
6
8
10
12
Power Loss (W)
Gate Drive
Transfomrer Core
Conduction + Turn Off
eGaN
IOUT = 20 A
MOSFET
IOUT = 20 A
eGaN
IOUT = 2.5 A
MOSFET
IOUT = 2.5 A
FS = 1.2 MHz, VIN = 48 V, and VOUT = 12 V
Loss Breakdown
Transformer
Core
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Wireless Power
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 10 10
Wireless Power
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 11 11
Wireless Power
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Wireless Power
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 13 13
Efficiency Comparison
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 14 14
Loss Breakdown
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Envelope Tracking
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Effect of Peak-to-average-power-ratio
Fixed supply
Peak Power Average
Power
Output Power (dBm)
Output
Probability
Average efficiency
only 25%
Peak efficiency
up to 65%
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Effect of ET
Envelope Tracking
Output Power (dBm)
Output
Probability
Average
Power
Average efficiency
~50% (incl. ET)
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 18 F0049, not a controlled doc.; RT001b 2/13/09 www.epc-co.com 18 EPC - The Leader in eGaN® FETs Darnell Power Forum 2012
Linear-assisted Buck ET
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 19 F0049, not a controlled doc.; RT001b 2/13/09 www.epc-co.com 19 EPC - The Leader in eGaN® FETs Darnell Power Forum 2012
Efficiency
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 20 20
1MHz Loss Breakdown
Top GaN FET
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4MHz Loss Breakdown
Top GaN FET
www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 22 F0049, not a controlled doc.; RT001b 2/13/09 www.epc-co.com 22 EPC - The Leader in eGaN® FETs Darnell Power Forum 2012
Summary
• eGaN FETs are superior compared with
power MOSFETs in hard-switched and
resonant converters
• eGaN FETs operate efficiently in multi-
megahertz envelope tracking and
wireless power converters
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The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!
