Advances in Silicon Photonics - CNRweb.nano.cnr.it/scuolafotonica2013/wp-content/uploads/...Photonic...
Transcript of Advances in Silicon Photonics - CNRweb.nano.cnr.it/scuolafotonica2013/wp-content/uploads/...Photonic...
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Advances in Silicon Photonics
Francesco Priolo Center for MAterials and Technologies for Information,
communication and Solar energy (MATIS, CNR-IMM)
&
Scuola Superiore di Catania, University of Catania, Italy
www.matis.imm.cnr.it www.ssc.unict.it
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La Legge di Moore
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Silicon Photonics Motivation
Interconnect bottleneck
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Courtesy of LUXTERA
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Outline
• Photonic crystal nanocavities
• Erbium Silicates
• Silicon Quantum Dots
• Silicon Nanowires
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SOI photonic crystal nanocavity light emitting devices
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Lasing (III-V)
Science 305, 1444 (2004)
Photonic crystal cavities
Ultrahigh Q
cavities Nature 425, 944 (2003)
Nat. Phot. 1, 49 (2007)
We want to use PhC high Q cavities for
achieving an efficient light emission in Si
Nat. Phot. 5, 297 (2011)
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Smart-cut and PL emission from SOI
The smart-cut process leads to the
formation of some H2-related defect,
showing a high PL intensity.
SOI = Silicon-On-Insulator
1300 1350 1400 1450 1500 1550 1600
0.1
1
10 Cz Si
SOI membrane
PL
in
ten
sity
(a.u
.)
wavelength (nm)
T=300 K
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PL emission from patterned SOI
The smart-cut process leads to the formation of
some H2-related defect, showing a high PL
intensity.
Max enhancement ≈ 300
FP ≈ 12
1300 1350 1400 1450 1500 1550 16000.1
1
10
100
1000
PhC cavity
SOI membrane
PL
in
ten
sity
(a.u
.)
wavelength (nm)
T=300 K
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Effect of Plasma Treatments
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Nanobubbles, extended defects
and platelets [(100) and {111}]. The plasma induces the formation
of defects just below the surface.
TEM analyses
50 nm
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TEM analyses
100 nm
The defects concentration
increases at the holes sidewalls.
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Why do not try to
electrically excite
the defects??
Tunable PL Emission in PhC cavities
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220
nm
1.9
μm 10 μm
p+ p+ 1 1019 B/cm3
p from ~1 1015 to 1 1018 B/cm3
Devices features
p p+
1 μm
• triangular lattice
• a = 400 nm and a = 800 nm
• ff varied between 0 and 75%
2
3
2
a
rff
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A very high EL intensity is
recorded! Even higher than
PL (at the saturation)!
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Laser-like Light Emitting Device
Remarks:
Room temperature
Telecom wavelengths
Potentially tunable between 1100 and 1600 nm
Peak width: 0.5 nm
Output power: 400 W/cm2 800 W/nm/cm2
Source Pumping W/nm/cm2 T
Porous Si 690 nm Electrical 9 300 K ~100 nm
Raman Laser 1686 nm Optical ~1011 300 K <0.001 nm
Si nc (gain) 800 nm Electrical 0.02 300 K ~100 nm
Ge-Si Laser 1600 nm Optical a.u. 300 K 0.5 nm
III-V PhC Laser 1170 nm Electrical 63 <150 K 0.95 nm
2 μm
1019
B/cm3
1019
P/cm3
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Erbium Silicates
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100
50
10
5
1
.7 .8 .9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
.5
.1
Silica optical fiber
Wavelength ( m)
Lo
ss (
dB
/km
)
0.9 m1.5 dB/km
1.3 m0.6 dB/km
1.55 m0.2 dB/km
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OPTICAL AMPLIFIERS FOR MICROPHOTONICS
Low solubility in silica-based hosts
[Er] ≈ 1020 cm-3
A. Polman et al., J. Appl. Phys. 70, 3778 (1991)
Er:SiO2 • All Er ions are optically excitable M. Miritello et al., Adv. Mater. 19, 1582 (2007)
• Theoretical optical gain K. Suh et al., Appl. Phys. Lett. 89, 223102 (2007)
• Electroluminescent devices Y. Yin et al., J. Phys.: Condens. Matter 21, 012204 (2009)
Laser
Optical fiber
Mirrors Modulators
Photodetector
Electronics
Er compounds
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Modify the solar spectrum
Egap(Si) Egap(Ge)
Overcome carriers thermalization
Downconverter
Rare Earths in Photovoltaics
Group IV semiconductor solar cells
Absorption of photons with hn < EG
Upconverter
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Dipole-dipole interactions Strongly depends on the high Er content
Cross-relaxation
0
5
10
15
en
erg
y (
10
3 c
m-1)
4I
9/24I
11/2
4I
15/2
4I
13/2
High Er content
Up-conversion
0
5
10
15
en
erg
y (
10
3 c
m-1)
4I
9/24I
11/2
4I
15/2
4I
13/2
High Er content High external pumping
Er-Er Interactions
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It is possible to change the Er content between
1020 and 1022 cm-3
RE and Er in solid hosts:
Same chemical properties Similar ionic radius Same compounds with similar structural features
Si O RE
Er-based compounds
Er as a constituent inside an OXIDE or SILICATE crystalline structure
Er inside a RE compounds
Er content ≈ 1022 cm-3
Mixed RE and Er All Er
RE
RE= Y
• Er oxide (Er2O3) • Er silicate (Er2SiO5, Er2Si2O7)
• Y-Er silicate (Y2-xErxSi2O7)
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Optical Properties
0 3 6 9 12 15
1
2
3
40.0 0.4 0.8 1.2 1.6 2.0
exc = 488 nm
x
NEr
(cm-3)
/0
x1021
PL
NErτ Normalized =
σ
σ0
Low pumping flux
No upconversion!
Linear regime
σNErτ ф τ rad
PL ∝
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0 3 6 9 12 15
1
2
3
40.0 0.4 0.8 1.2 1.6 2.0
exc = 488 nm
x
NEr
(cm-3)
/0
x1021
Optical properties
PL
NErτ Normalized = σ
σ0
0.0
0.5
1.0
1.5
2.0
2.54F
7/2
4S
3/2
4I
9/2
4I
11/2
4I
15/2
4I
13/2En
erg
y (
eV)
Pump
488 nm 1.54 μm
Low NEr (x<0.65)
1 excitation per photon
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Optical Properties
0 3 6 9 12 15
1
2
3
40.0 0.4 0.8 1.2 1.6 2.0
exc = 488 nm
x
NEr
(cm-3)
/0
x1021
Increase of the 4I13/2
excitation cross section 0.0
0.5
1.0
1.5
2.0
2.54F
7/2
4S
3/2
4I
9/2
4I
11/2
4I
15/2
4I
13/2En
erg
y (
eV)
Medium NEr (0.65≤x<2)
2 excitations per photon
Pump
488 nm 1.54 μm 1.54 μm
PL
NErτ Normalized = σ
σ0
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OPTICAL PROPERTIES
0 3 6 9 12 15
1
2
3
40.0 0.4 0.8 1.2 1.6 2.0
exc = 488 nm
x
NEr
(cm-3)
/0
x1021
Maximum excitation efficiency ≈ 300%
for Er disilicate 0.0
0.5
1.0
1.5
2.0
2.54F
7/2
4S
3/2
4I
9/2
4I
11/2
4I
15/2
4I
13/2En
erg
y (
eV)
High NEr (x=2)
3 excitations per photon
4I
15/2
4I
13/2
4I
15/2
4I
13/2
Pump
488 nm
1.54 μm 1.54 μm
1.54 μm
PL
NErτ Normalized = σ
σ0
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sYb(lexc=980 nm)= 2.0x10-20 cm2
sEr(lexc=980 nm)= 2.0x10-21 cm2
Very high excitation cross section
Insert gradually Er in Yb2-xErxSi2O7 Strong coupling Yb-Er
Very large absorption band
750 800 850 900 950 10000.0
0.2
0.3
0.5
0.7
0.8
1.0
1000 1100 1200 1500
0.00
0.25
0.50
0.75
1.00
Yb= 19 at.%x 0.25
No
rmali
zed
PL
In
ten
sity
at
10
25
nm
Excitation wavelength (nm)
P
L I
nte
nsi
ty (
a.u
.)Wavelength (nm)
exc= 920 nm
Er-Yb based compounds
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PL EMISSION AT 1.5 m
t(4I15/2) is not influenced
by [Yb] presence
Maximum PL(1.5 mm) is reached for [Yb]= 17.2 at.% [Er]= 1.8 at.%
Yb Er
0 2 4 6 8 10 12 14 16 18 20 22
1
2
3
4
5
6
7
8
9
10
11
0
1
2
3
4
5
PL
PL
at
1.5
m
(a.u
.)
NYb
(at.%)
exc=980 nm
_(Yb-Er)2Si
2O
7
_(Y-Er)2Si
2O
7
at
1.5
m
(m
s)
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1E17 1E18 1E19 1E20 1E21 1E22 1E230.01
0.1
1
10
100
1000
10000
1E-3
0.01
0.1
1
10
100 Yb-Er
Y-Er
exc= 980 nm
PL
In
ten
sity
@ 1
.5 m
(a.u
.)
flux (cm-2s
-1)
N1/N
Er (
%)
PL EMISSION AS A FUNCTION OF FLUX
Very high percentage of excited Er ions
is obtained in Yb-Er disilicate
[Yb]= 17.2 at.% [Er]= 1.8 at.% [Yb]= 0 at.% [Er]= 1.8 at.%
Yb= 2.0x10-20 cm2
Cup = (6 ± 1)×10-16 cm3/s
Yb= 2.0x10-21 cm2
Cup = (6 ± 1)×10-16 cm3/s
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Integration of photonic crystals with Er-based RE compounds
RE or Er
O Si
RE-Er)2Si2O7 It is possible to vary Er content
between 1020 and 1022 cm-3 RE-Er)2Si2O7, RE=Y or Yb
on top of L3 cavity
c-Si
SiO2
Si
RE-Er)2Si2O7
a
1500 1520 1540 1560 15800
3
6
9
12
15 Y-Er disilicate
on SOI
PL
in
ten
sity
(a.u
.)
Wavelength (nm)
lattice constant, a
416 nm
422 nm
423 nm
424 nm
425 nm
429 nm
x 100
Er coupling with cavity modes
10-4
10-3
10-2
10-1
100
101
102
103
10-1
100
101
102
Em
itte
d p
ow
er
(pW
)
Pump power (mW)
1020
1021
1022
1023
1024
1025
1026
10-4
10-3
10-2
10-1
100
Ex
cit
ed
Er
fracti
on
Photon flux (cm-2s
-1)
(Y-Er)2Si2O7
(Yb-Er)2Si2O7
0.8×1021 Er/cm3
High excited Er fraction
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Silicon Quantum Dots
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Samples preparation PE-CVD
N2O+SiH4
RF magnetron sputtering
Co-sputtering from 3 different targets
Amorphous Si nanoclusters
Si nanocrystals
Targets: SiO2 Er2O3 Si
• SiOx
• SiOx + Er ions
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0 10 20 30 40 50
SiOx
T = 1250 °C
Energy (eV)
Co
un
ts (
a.u
.)
Si
SiO2
Electron energy loss spectra
20 nm
Dark field TEM
20 nm
Energy filtered TEM
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Formation of Si Nanoclusters
5 nm 10 nm 10 nm
1100 C 1150 C 1250 C 10 nm
10 nm
10 nm
As-deposited 900 C 1000 C
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Nanocrystals luminescence
600 700 800 900 1000110012000,0
0,2
0,4
0,6
0,8
1,0
1,2
Si nc radius
1250 °C 1 h
35 at. Si
37 at. Si
39 at. Si
42 at. Si
44 at. Si
PL Inte
nsity (
a.u
.)
Wavelength (nm)
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Silicon nanocrystal MOSLED device
x
100 nm
Metallization
Poly-Si
SiO x
Si substrate
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Erbium in Si Nanostructures
1400 1500 1600 17000,0
0,5
1,0
1,5
2,0
2,5
3,0
x 5
Er doped Si nanoclusters
Er doped SiO2
PL
In
ten
sity (
a.u
.)
Wavelength (nm)
RT PL
10 mW
400 500 600 700 800 900 1000
10-13
10-12
10-11
10-10
1.54 m (Er + Si nc)
1.54 m (Er in SiO2)
0.90 m (Si nc)
I PL
E/
(a
rb.
un
its)
Excitation Wavelength (nm)
4I11/2 - 4I15/2
4I9/2 - 4I15/2
2H11/2 - 4I15/2
4F7/2 - 4I15/2
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1000 1200 1400 16000,00
0,02
0,04
0,06
0,08
E
L I
nte
nsity (
a.u
.)
Wavelength (nm)
0 200 400 600 800 1000
10-1
100
Electroluminescence
Photoluminescence
Time ( s)
Norm
aliz
ed I
nte
nsity
Er doped Si nanoclusters device
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Electrically-Driven Er and Si Nanocluster Optical Amplifier
photon
Si nc
Er3+
1.54 mm
Stimulated emission Er3+
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Silicon nanowires light emitting devices
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Metallic catalyst
V L
(111) Substrate
S
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• Gibbs Thompson Effect in VLS
• Gold Diffusion
• Doping
Vapor Liquid Solid drawbacks
Koren E. et al. , Nano Letters 10, 1163 (2010)
Den Hertog M. et al., Nano Letters 8, 1544 (2008)
Critical radius!
Dubrovskii V. et al.., PRB 78, 235301 (2008)
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Si
Si RT
Si
HF + H2O2 + H2O Si RT
2-3 nm-thick Au layer
Si KI etch
100 nm
Si Au
30nm
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0.0
0.1
0.2
thAu = 3 nm
(dSi = 6 ± 1 nm)
thAu = 2 nm
(dSi = 9 ± 2 nm)
thAg = 10 nm
(dSi = 12 ± 3 nm)
Diameter of uncovered Si regions (nm)
0.0
0.1
0.2
Rel
ativ
e fr
equ
ency
0 5 10 15 20
0.0
0.1
Si Au
30nm
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10 nm
505 510 515 520 525
thAu
= 3 nm
dNW
= 5 1 nm
thAu
= 2 nm
dNW
= 7 2 nm
thAg
=10 nm
dNW
= 9 2 nm
bulk Si
No
rmali
zed
in
ten
sity
(a.u
.)
Raman shift (cm-1)
Si plasmon SiO2 plasmon
d = 4 nm d = 7 nm
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ηq ext > 0.5%
600 650 700 750 800 850 9000.0
0.2
0.4
0.6
0.8
1.0
dNW
= 5 1 nm
dNW
= 7 2 nm
dNW
= 9 2 nm
PL
in
ten
sity
(a.u
.)
Wavelength (nm)
0 50 100 150 200
0.1
1
No
rmali
zed
PL
in
ten
sity
time ( s)
640 nm = 17 s
690 nm = 25 s
750 nm = 38 s
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Fractal geometry &
Blackbody behavior
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Coherent Enhanced Raman Backscattering
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Si/Ge Nanowires
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Si NWs LED AZO
Si NWs
400 600 800 1000 12000
50
100
150
200
2 V
3 V
4 V
5 V
6 V
EL
in
ten
sity
(a.
u.)
Wavelength (nm)
Room temperature
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Conclusions
0 3 6 9 12 15
1
2
3
40.0 0.4 0.8 1.2 1.6 2.0
exc = 488 nm
x
NEr
(cm-3)
/0
x1021