Advanced LinCMOS Rail-to-Rail Operational Amplifier (Rev. D) · TS274, TLC272, and...
Transcript of Advanced LinCMOS Rail-to-Rail Operational Amplifier (Rev. D) · TS274, TLC272, and...
TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL
OPERATIONAL AMPLIFIERS
�
SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
� Qualified for Automotive Applications
� Output Swing Includes Both Supply Rails
� Low Noise . . . 9 nV/√Hz Typ at f = 1 kHz
� Low Input Bias Current . . . 1 pA Typ
� Fully Specified for Both Single-Supply andSplit-Supply Operation
� Common-Mode Input Voltage RangeIncludes Negative Rail
� High-Gain Bandwidth . . . 2.2 MHz Typ
� High Slew Rate . . . 3.6 V/μs Typ
� Low Input Offset Voltage 950 μV Max at TA = 25°C
� Macromodel Included
� Performance Upgrades for the TS272,TS274, TLC272, and TLC274
description
The TLC2272 and TLC2274 are dual andquadruple operational amplifiers from TexasInstruments. Both devices exhibit rail-to-railoutput performance for increased dynamic rangein single- or split-supply applications. TheTLC227x family offers 2 MHz of bandwidth and3 V/μs of slew rate for higher speed applications.These devices offer comparable ac performancewhile having better noise, input offset voltage, andpower dissipation than existing CMOS operation-al amplifiers. The TLC227x has a noise voltage of9 nV/√Hz, two times lower than competitivesolutions.
The TLC227x, exhibiting high input impedanceand low noise, is excellent for small-signalconditioning for high-impedance sources, such aspiezoelectric transducers. Because of the micro-power dissipation levels, these devices work wellin hand-held monitoring and remote-sensingapplications. In addition, the rail-to-rail outputfeature, with single- or split-supplies, makes thisfamily a great choice when interfacing withanalog-to-digital converters (ADCs). For precision applications, the TLC227xA family is available with amaximum input offset voltage of 950 μV. This family is fully characterized at 5 V and ±5 V.
The TLC2272/4 also makes great upgrades to the TLC272/4 or TS272/4 in standard designs. They offerincreased output dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature setallows them to be used in a wider range of applications. For applications that require higher output drive andwider input voltage range, see the TLV2432 and TLV2442 devices.
Copyright © 2009, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments.
|VDD ±| − Supply Voltage − V
10
8
6
44 6 8
12
14
16
10 12 14 16
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
TA = 25°C
IO = ±50 μA
IO = ±500 μA
V(O
PP
) −
Max
imu
m P
eak-
to-P
eak
Ou
tpu
t Vo
ltag
e −
VV
O(P
P)
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAILOPERATIONAL AMPLIFIERS
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2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS�
V max AtPACKAGED DEVICES�
TAVIOmax At
25°C SMALL OUTLINE(D)
TSSOP(PW)
40°C to 125°C950 μV TLC2272AQDRQ1 TLC2272AQPWRQ1
−40°C to 125°C950 μV2.5 mV
TLC2272AQDRQ1TLC2272QDRQ1
TLC2272AQPWRQ1TLC2272QPWRQ1
40°C to 125°C950 μV TLC2274AQDRQ1 TLC2274AQPWRQ1
−40°C to 125°C950 μV2.5 mV
TLC2274AQDRQ1TLC2274QDRQ1
TLC2274AQPWRQ1TLC2274QPWRQ1
† For the most current package and ordering information, see the Package Option Addendumat the end of this document, or see the TI web site at http://www.ti.com.
‡ Package drawings, thermal data, and symbolization are available athttp://www.ti.com/packaging.
1
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4
8
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6
5
1OUT1IN−1IN+
VDD −/GND
VDD +
2OUT2IN−2IN+
TLC2272D OR PW PACKAGE
(TOP VIEW)
1
2
3
4
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7
14
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1OUT1IN−1IN+VDD +
2IN+2IN−
2OUT
4OUT4IN−4IN+VDD −
3IN+3IN−3OUT
TLC2274D OR PW PACKAGE
(TOP VIEW)
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL
OPERATIONAL AMPLIFIERS
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
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equivalent schematic (each amplifier)
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
VDD +
IN+
IN−
R3 R4 R1 R2
OUT
VDD−
ACTUAL DEVICE COMPONENT COUNT†
COMPONENT TLC2272 TLC2274
Transistors 38 76
Resistors 26 52
Diodes 9 18
Capacitors 3 6† Includes both amplifiers and all ESD, bias, and trim circuitry
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAILOPERATIONAL AMPLIFIERS
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD+ (see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VDD− (see Note 1) −8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±16 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input, see Note 1) VDD− − 0.3 V to VDD+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (any input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VDD− ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA −40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range −65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or PW package 260°C. . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD −.2. Differential voltages are at IN+ with respect to IN−. Excessive current will flow if input is brought below VDD − − 0.3 V.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C
PACKAGETA ≤ 25 C
POWER RATINGDERATING FACTOR
ABOVE TA = 25°CTA = 70 C
POWER RATINGTA = 85 C
POWER RATINGTA = 125 C
POWER RATING
D-8 725 mW 5.8 mW/°C 464 mW 337 mW 145 mW
D-14 950 mW 7.6 mW/°C 608 mW 494 mW 190 mW
PW-8 525 mW 4.2 mW/°C 336 mW 273 mW 105 mW
PW-14 700 mW 5.6 mW/°C 448 mW 364 mW —
ELECTROSTATIC DISCHARGE RATING TABLE
RATING
Human-Body Model (HBM) 2000 V
TLC2272 Machine Model (MM) 100 V
ESD Electrostatic discharge rating
TLC2272
Charged-Device Model (CDM) 1500 VESD Electrostatic discharge rating
Human-Body Model (HBM) 500 V
TLC2274 Machine Model (MM) 100 VTLC2274
Charged-Device Model (CDM) 1000 V
recommended operating conditions
MIN MAX UNIT
VDD ± Supply voltage ±2.2 ±8 V
VI Input voltage VDD − VDD + −1.5 V
VIC Common-mode input voltage VDD − VDD + −1.5 V
TA Operating free-air temperature −40 125 °C
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL
OPERATIONAL AMPLIFIERS
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2272Q electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwisenoted)
PARAMETER TEST CONDITIONS T †TLC2272Q TLC2272AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
V Input offset voltage25°C 300 2500 300 950
μVVIO Input offset voltageFull range 3000 1500
μV
α Temperature coefficient 25°C2 2 μV/°CαVIO
Temperature coefficientof input offset voltage
25 Cto 125°C 2 2 μV/°C
Input offset voltage long-term drift (see Note 4)
VIC = 0 V,VO = 0 V,
VDD ± = ±2.5 V,RS = 50 Ω
25°C 0.002 0.002 μV/mo
I Input offset current
VO = 0 V, RS = 50 Ω25°C 0.5 60 0.5 60
pAIIO Input offset currentFull range 800 800
pA
I Input bias current25°C 1 60 1 60
pAIIB Input bias currentFull range 800 800
pA
V CCommon-mode input
RS = 50 Ω |V O | ≤ 5 mV
25°C0
to 4−0.3
to 4.20
to 4−0.3
to 4.2VVICR
Common mode inputvoltage
RS = 50 Ω, |VIO | ≤ 5 mVFull range
0to 3.5
0to 3.5
V
IOH = −20 μA 25°C 4.99 4.99
High level output IO = 200 μA25°C 4.85 4.93 4.85 4.93
VOHHigh-level outputvoltage
IOH = −200 μAFull range 4.85 4.85 VVOH voltage
I = 1 mA25°C 4.25 4.65 4.25 4.65
V
IOH = −1 mAFull range 4.25 4.25
VIC = 2.5 V, IOL = 50 μA 25°C 0.01 0.01
V = 2 5 V I = 500 μA25°C 0.09 0.15 0.09 0.15
VOL Low-level output voltageVIC = 2.5 V, IOL = 500 μA
Full range 0.15 0.15 VVOL Low level output voltage
V C = 2 5 V IO = 5 mA25°C 0.9 1.5 0.9 1.5
V
VIC = 2.5 V, IOL = 5 mAFull range 1.5 1.5
Large-signalV 2 5 V R 10 kه
25°C 10 35 10 35
AVD
Large-signal differential voltage
VIC = 2.5 V,VO = 1 V to 4 V
RL = 10 kهFull range 10 10 V/mVAVD differential voltage
amplificationVO = 1 V to 4 V
RL = 1 mΩ‡ 25°C 175 175
V/mV
ridDifferential inputresistance
25°C 1012 1012 Ω
riCommon-mode inputresistance
25°C 1012 1012 Ω
ciCommon-mode inputcapacitance
f = 10 kHz, P package 25°C 8 8 pF
zoClosed-loop outputimpedance
f = 1 MHz, AV = 10 25°C 140 140 Ω
CMRRCommon-mode rejection VIC = 0 V to 2.7 V, 25°C 70 75 70 75
dBCMRRCommon mode rejectionratio
VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70
dB
kSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95
dBkSVRSupply voltage rejectionratio (ΔVDD /ΔVIO)
VDD = 4.4 V to 16 V, VIC = VDD /2, No load Full range 80 80
dB
I Supply current V 2 5 V No load25°C 2.2 3 2.2 3
mAIDD Supply current VO = 2.5 V, No loadFull range 3 3
mA
† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 VNOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAILOPERATIONAL AMPLIFIERS
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2272Q operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T †TLC2272Q TLC2272AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
Slew rate at V 1 25 V to 2 75 V25°C 2.3 3.6 2.3 3.6
SRSlew rate atunity gain
VO = 1.25 V to 2.75 V, RL = 10 kΩ‡, CL = 100 pF‡ Full
1 7 1 7V/μs
unity gain RL = 10 kΩ‡, CL = 100 pF‡ Fullrange 1.7 1.7
μ
VEquivalent input f = 10 Hz 25°C 50 50
nV/√HzVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9
nV/√Hz
VPeak-to-peakequivalent input
f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4μV
InEquivalent inputnoise current
25°C 0.6 0.6 fA/√Hz
Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%
THD + NTotal harmonicdistortion plus
VO = 0.5 V to 2.5 V,f = 20 kHz,
‡AV = 10 25°C 0.004% 0.004%THD + N distortion plus
noisef 20 kHz,RL = 10 kه, AV = 100
25 C
0.03% 0.03%
Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2 18 2 18 MHz
Gain bandwidthproduct
f = 10 kHz,CL = 100 pF‡
RL = 10 kΩ‡,25°C 2.18 2.18 MHz
BMaximum output- VO(PP) = 2 V, AV = 1,
25°C 1 1 MHzBOMMaximum outputswing bandwidth
VO(PP) = 2 V,RL = 10 kه,
AV = 1,CL = 100 pF‡ 25°C 1 1 MHz
AV = −1,To 0 1% 1 5 1 5
t Settling time
AV = −1,Step = 0.5 V to 2.5 V,
To 0.1%25°C
1.5 1.5sts Settling time
Step = 0.5 V to 2.5 V,RL = 10 kه,
To 0 01%25°C
2 6 2 6μsRL = 10 kΩ ,
CL = 100 pF‡ To 0.01% 2.6 2.6
φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡
25°C 50° 50°
Gain margin
RL = 10 kΩ‡, CL = 100 pF‡
25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 V
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL
OPERATIONAL AMPLIFIERS
�
SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2272Q electrical characteristics at specified free-air temperature, VDD± = ±5 V (unlessotherwise noted)
PARAMETER TEST CONDITIONS T †TLC2272Q TLC2272AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
V Input offset voltage25°C 300 2500 300 950
μVVIO Input offset voltageFull range 3000 1500
μV
α Temperature coefficient of 25°C2 2 μV/°CαVIO
Temperature coefficient ofinput offset voltage
25 Cto 125°C 2 2 μV/°C
Input offset voltagelong-term drift (see Note 4)
VIC = 0 V,RS = 50 Ω
VO = 0 V, 25°C 0.002 0.002 μV/mo
I O Input offset current25°C 0.5 60 0.5 60
pAIIO Input offset currentFull range 800 800
pA
I Input bias current25°C 1 60 1 60
pAIIB Input bias currentFull range 800 800
pA
−5 −5 3 −5 −5 325°C −5
t 4−5.3
t 4 2−5
t 4−5.3
t 4 2V
Common-mode inputR 50 Ω |V | ≤ 5 mV
25 Cto 4 to 4.2 to 4 to 4.2
VVICRCommon mode inputvoltage
RS = 50 Ω, |VIO | ≤ 5 mV−5 −5
VICR voltage S , | IO |Full range
−5t 3 5
−5t 3 5
Full rangeto 3.5 to 3.5
IO = −20 μA 25°C 4.99 4.99
Maximum positive peak I = 200 μA25°C 4.85 4.93 4.85 4.93
VOM +Maximum positive peakoutput voltage
IO = −200 μAFull range 4.85 4.85 VVOM + output voltage
IO = 1 mA25°C 4.25 4.65 4.25 4.65
V
IO = −1 mAFull range 4.25 4.25
VIC = 0 V, IO = 50 μA 25°C −4.99 −4.99
Maximum negative peak V = 0 V I = 500 μA25°C −4.85 −4.91 −4.85 −4.91
VOM −Maximum negative peakoutput voltage
VIC = 0 V, IO = 500 μAFull range −4.85 −4.85 VVOM − output voltage
V = 0 V I = 5 mA25°C −3.5 −4.1 −3.5 −4.1
V
VIC = 0 V, IO = 5 mAFull range −3.5 −3.5
Large signal differential R = 10 kΩ25°C 20 50 20 50
AVDLarge-signal differentialvoltage amplification VO = ±4 V
RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO ±4 V
RL = 1 mΩ 25°C 300 300
V/mV
rid Differential input resistance 25°C 1012 1012 Ω
riCommon-mode inputresistance
25°C 1012 1012 Ω
ciCommon-mode inputcapacitance
f = 10 kHz, P package 25°C 8 8 pF
zoClosed-loop outputimpedance
f = 1 MHz, AV = 10 25°C 130 130 Ω
CMRRCommon-mode rejection VIC = −5 V to 2.7 V, 25°C 75 80 75 80
dBCMRRCommon mode rejectionratio
VIC = 5 V to 2.7 V, VO = 0 V, RS = 50 Ω Full range 75 75
dB
kSupply-voltage rejection VDD = ±2.2 V to ±8 V, 25°C 80 95 80 95
dBkSVRSupply voltage rejectionratio (ΔVDD ± /ΔVIO)
VDD = ±2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80
dB
I Supply current V 2 5 V No load25°C 2.4 3 2.4 3
mAIDD Supply current VO = 2.5 V, No loadFull range 3 3
mA
† Full range is −40°C to 125°C for Q level part.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAILOPERATIONAL AMPLIFIERS
�
SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2272Q operating characteristics at specified free-air temperature, VDD± = ±5 V
PARAMETER TEST CONDITIONS T †TLC2272Q TLC2272AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
Slew rate at V ±1 V R 10 kΩ25°C 2.3 3.6 2.3 3.6
SRSlew rate atunity gain
VO = ±1 V, RL = 10 kΩ,CL = 100 pF Full
1 7 1 7V/μs
unity gain CL = 100 pF Fullrange 1.7 1.7
μ
VEquivalent input f = 10 Hz 25°C 50 50
nV/√HzVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9
nV/√Hz
VPeak-to-peakequivalent input
f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4μV
InEquivalent inputnoise current
25°C 0.6 0.6 fA/√Hz
Total harmonic VO = ±2.3 V AV = 1 0.0011% 0.0011%
THD + NTotal harmonicdistortion plus
VO = ±2.3 VRL = 10 kΩ, AV = 10 25°C 0.004% 0.004%THD + N distortion plus
noiseRL 10 kΩ,f = 20 kHz AV = 100
25 C
0.03% 0.03%
Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2 25 2 25 MHz
Gain bandwidthproduct
f = 10 kHz,CL = 100 pF
RL = 10 kΩ,25°C 2.25 2.25 MHz
BMaximumoutput swing
VO(PP) = 4.6 V, AV = 1,25°C 0 54 0 54 MHzBOM output-swing
bandwidth
VO(PP) = 4.6 V,RL = 10 kΩ,
AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz
AV = −1,To 0 1% 1 5 1 5
t Settling time
AV = −1,Step = −2.3 V to 2.3 V,
To 0.1%25°C
1.5 1.5sts Settling time
Step = −2.3 V to 2.3 V,RL = 10 kΩ,
To 0 01%25°C
3 2 3 2μsRL = 10 kΩ,
CL = 100 pF To 0.01% 3.2 3.2
φmPhase margin atunity gain RL = 10 kΩ, CL = 100 pF
25°C 52° 52°
Gain marginRL = 10 kΩ, CL = 100 pF
25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.
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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL
OPERATIONAL AMPLIFIERS
�
SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2274Q electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwisenoted)
PARAMETER TEST CONDITIONS T †TLC2274Q TLC2274AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
V Input offset voltage25°C 300 2500 300 950
μVVIO Input offset voltageFull range 3000 1500
μV
α Temperature coefficient 25°C2 2 μV/°CαVIO
Temperature coefficientof input offset voltage
25 Cto 125°C 2 2 μV/°C
Input offset voltagelong-term drift(see Note 4)
VDD ± = ±2.5 V,VO = 0 V,
VIC = 0 V,RS = 50 Ω
25°C 0.002 0.002 μV/mo
I O Input offset current25°C 0.5 60 0.5 60
pAIIO Input offset currentFull range 800 800
pA
I Input bias current25°C 1 60 1 60
pAIIB Input bias currentFull range 800 800
pA
0 −0 3 0 −0 325°C 0
t 4−0.3
t 4 20
t 4−0.3
t 4 2V
Common-mode inputR 50 Ω |V | ≤ 5 mV
25 Cto 4 to 4.2 to 4 to 4.2
VVICRCommon mode inputvoltage
RS = 50 Ω, |VIO | ≤ 5 mV0 to 0 to
VICR voltage S , | IO |Full range
0 to3 5
0 to3 5
Full range3.5 3.5
IOH = −20 μA 25°C 4.99 4.99
High level output I = 200 μA25°C 4.85 4.93 4.85 4.93
VOHHigh-level outputvoltage
IOH = −200 μAFull range 4.85 4.85 VVOH voltage
IO = 1 mA25°C 4.25 4.65 4.25 4.65
V
IOH = −1 mAFull range 4.25 4.25
VIC = 2.5 V, IOL = 50 μA 25°C 0.01 0.01
Low level outputVIC = 2.5 V, 25°C 0.09 0.15 0.09 0.15
VOLLow-level outputvoltage
VIC = 2.5 V,IOL = 500 μA Full range 0.15 0.15 VVOL voltage
V = 2 5 V I = 5 mA25°C 0.9 1.5 0.9 1.5
V
VIC = 2.5 V, IOL = 5 mAFull range 1.5 1.5
L i l diff ti l V 2 5 V R 10 kΩ‡25°C 10 35 10 35
AVDLarge-signal differentialvoltage amplification
VIC = 2.5 V,VO = 1 V to 4 V
RL = 10 kهFull range 10 10 V/mVAVD voltage amplification VO = 1 V to 4 V
RL = 1 MΩ‡ 25°C 175 175
V/mV
ridDifferential inputresistance
25°C 1012 1012 Ω
riCommon-mode inputresistance
25°C 1012 1012 Ω
ciCommon-mode inputcapacitance
f = 10 kHz, N package 25°C 8 8 pF
zoClosed-loop outputimpedance
f = 1 MHz, AV = 10 25°C 140 140 Ω
CMRRCommon-mode VIC = 0 V to 2.7 V, 25°C 70 75 70 75
dBCMRRCommon mode rejection ratio
VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70
dB
kSSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95
dBkSVRSupply voltage rejectionratio (ΔVDD /ΔVIO)
VDD = 4.4 V to 16 V,VIC = VDD /2, No load Full range 80 80
dB
I Supply current V 2 5 V No load25°C 4.4 6 4.4 6
mAIDD Supply current VO = 2.5 V, No loadFull range 6 6
mA
† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 VNOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2274Q operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T †TLC2274Q TLC2274AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
Slew rate at unity V 0 5 V to 2 5 V C 100 pF‡25°C 2.3 3.6 2.3 3.6
SRSlew rate at unitygain
VO = 0.5 V to 2.5 V,RL = 10 kه
CL = 100 pF‡Full
1 7 1 7V/μs
gain RL = 10 kه, Fullrange 1.7 1.7
μ
VEquivalent input f = 10 Hz 25°C 50 50
nV/√HVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9
nV/√Hz
VPeak-to-peakequivalent input
f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4μV
InEquivalent inputnoise current
25°C 0.6 0.6 fA /√Hz
Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%
THD + NTotal harmonicdistortion plus
VO = 0.5 V to 2.5 V,f = 20 kHz,
‡AV = 10 25°C 0.004% 0.004%THD + N distortion plus
noisef 20 kHz,RL = 10 kه
AV = 100
25 C
0.03% 0.03%
Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2 18 2 18 MHz
Gain bandwidthproduct
f = 10 kHz,CL = 100 pF‡
RL = 10 kΩ‡,25°C 2.18 2.18 MHz
BMaximum out-put swing band
VO(PP) = 2 V, AV = 1,25°C 1 1 MHzBOM put-swing band-
width
VO(PP) = 2 V,RL = 10 kه,
AV = 1,CL = 100 pF‡ 25°C 1 1 MHz
AV = −1,To 0 1% 1 5 1 5
t Settling time
AV = −1,Step = 0.5 V to 2.5 V,
To 0.1%25°C
1.5 1.5sts Settling time
Step = 0.5 V to 2.5 V,RL = 10 kه,
To 0 01%25°C
2 6 2 6μsRL = 10 kΩ ,
CL = 100 pF‡ To 0.01% 2.6 2.6
φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡
25°C 50° 50°
Gain marginRL = 10 kΩ‡, CL = 100 pF‡
25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 V
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2274Q electrical characteristics at specified free-air temperature, VDD± = ±5 V (unlessotherwise noted)
PARAMETER TEST CONDITIONS T †TLC2274Q TLC2274AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
V Input offset voltage25°C 300 2500 300 950
VVIO Input offset voltageFull range 3000 1500
μV
Temperature coefficient of 25°C2 2 V/°CαVIO
Temperature coefficient ofinput offset voltage
25 Cto 125°C 2 2 μV/°C
Input offset voltage long-term drift (see Note 4)
VIC = 0 V,RS = 50 Ω
VO = 0 V, 25°C 0.002 0.002 μV/mo
I Input offset current
RS = 50 Ω25°C 0.5 60 0.5 60
pAIIO Input offset currentFull range 800 800
pA
I Input bias current25°C 1 60 1 60
pAIIB Input bias currentFull range 800 800
pA
−5 −5 3 −5 −5 325°C
−5t 4
−5.3t 4 2
−5t 4
−5.3t 4 2
VCommon-mode input
R 50 Ω |V | ≤ 5 mV25°C to 4 to 4.2 to 4 to 4.2
VVICRCommon mode inputvoltage RS = 50 Ω, |VIO | ≤ 5 mV
−5 −5VICR voltage S , | IO |
Full range−5
t 3 5−5
t 3 5Full range to 3.5 to 3.5
IO = −20 μA 25°C 4.99 4.99
M i iti k I 200 A25°C 4.85 4.93 4.85 4.93
VOM +Maximum positive peakoutput voltage
IO = −200 μAFull range 4.85 4.85 VVOM + output voltage
I 1 mA25°C 4.25 4.65 4.25 4.65
V
IO = −1 mAFull range 4.25 4.25
VIC = 0 V, IO = 50 μA 25°C −4.99 −4.99
M i ti k V 0 V I 500 A25°C −4.85 −4.91 −4.85 −4.91
VOM −Maximum negative peakoutput voltage
VIC = 0 V, IO = 500 μAFull range −4.85 −4.85 VVOM − output voltage
V 0 V I 5 mA25°C −3.5 −4.1 −3.5 −4.1
V
VIC = 0 V, IO = 5 mAFull range −3.5 −3.5
L i l diff ti l R 10 kΩ25°C 20 50 20 50
AVDLarge-signal differentialvoltage amplification VO = ±4 V
RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO ±4 V
RL = 1 MΩ 25°C 300 300
V/mV
rid Differential input resistance 25°C 1012 1012 Ω
riCommon-mode input resistance
25°C 1012 1012 Ω
ciCommon-mode inputcapacitance
f = 10 kHz, N package 25°C 8 8 pF
zoClosed-loop outputimpedance
f = 1 MHz, AV = 10 25°C 130 130 Ω
CMRRCommon-mode rejection VIC = −5 V to 2.7 V 25°C 75 80 75 80
dBCMRRCommon mode rejectionratio
VIC = 5 V to 2.7 VVO = 0 V, RS = 50 Ω Full range 75 75
dB
kSupply-voltage rejection VDD ± = ± 2.2 V to ±8 V, 25°C 80 95 80 95
dBkSVRSupply voltage rejectionratio (ΔVDD ± /ΔVIO)
VDD ± = ± 2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80
dB
I Supply current V = 0 V No load25°C 4.8 6 4.8 6
mAIDD Supply current VO = 0 V, No loadFull range 6 6
mA
† Full range is −40°C to 125°C for Q level part.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC2274Q operating characteristics at specified free-air temperature, VDD± = ±5 V
PARAMETER TEST CONDITIONS T †TLC2274Q TLC2274AQ
UNITPARAMETER TEST CONDITIONS TA†
MIN TYP MAX MIN TYP MAXUNIT
Slew rate at unity V ±2 3 V R 10 kΩ25°C 2.3 3.6 2.3 3.6
SRSlew rate at unitygain
VO = ±2.3 V,CL = 100 pF
RL = 10 kΩ,Full
1 7 1 7V/μs
gain CL = 100 pF Fullrange 1.7 1.7
μ
VEquivalent input f = 10 Hz 25°C 50 50
nV/√HVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9
nV/√Hz
VPeak-to-peakequivalent input
f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input
noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4μV
InEquivalent inputnoise current
25°C 0.6 0.6 fA /√Hz
Total harmonic VO = ±2.3 V, AV = 1 0.0011% 0.0011%
THD + NTotal harmonicdistortion plus
VO = ±2.3 V,RL = 10 kΩ, AV = 10 25°C 0.004% 0.004%THD + N distortion plus
noiseRL 10 kΩ,f = 20 kHz AV = 100
25 C
0.03% 0.03%
Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2 25 2 25 MHz
Gain bandwidthproduct
f = 10 kHz,CL = 100 pF
RL = 10 kΩ,25°C 2.25 2.25 MHz
BMaximumoutput swing
VO(PP) = 4.6 V, AV = 1,25°C 0 54 0 54 MHzBOM output-swing
bandwidth
VO(PP) = 4.6 V,RL = 10 kΩ,
AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz
AV = −1,To 0 1% 1 5 1 5
t Settling time
AV = −1,Step = −2.3 V to 2.3 V,
To 0.1%25°C
1.5 1.5sts Settling time
Step = −2.3 V to 2.3 V,RL = 10 kΩ,
To 0 01%25°C
3 2 3 2μsRL = 10 kΩ,
CL = 100 pF To 0.01% 3.2 3.2
φmPhase margin atunit gain RL = 10 kΩ, CL = 100 pF
25°C 52° 52°
Gain marginRL = 10 kΩ, CL = 100 pF
25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of GraphsFIGURE
V Input offset voltageDistribution 1 − 4
VIO Input offset voltageDistributionvs Common-mode voltage
1 45, 6
αVIO Input offset voltage temperature coefficient Distribution 7 − 10
IIB /IIO Input bias and input offset current vs Free-air temperature 11
V Input voltagevs Supply voltage 12
VI Input voltagevs Supply voltagevs Free-air temperature
1213
VOH High-level output voltage vs High-level output current 14
VOL Low-level output voltage vs Low-level output current 15, 16
VOM + Maximum positive peak output voltage vs Output current 17
VOM − Maximum negative peak output voltage vs Output current 18
VO(PP) Maximum peak-to-peak output voltage vs Frequency 19
I Short circuit output currentvs Supply voltage 20
IOS Short-circuit output currentvs Supply voltagevs Free-air temperature
2021
VO Output voltage vs Differential input voltage 22, 23
Large-signal differential voltage amplification vs Load resistance 24
AVDLarge-signal differential voltage amplificationand phase margin
vs Frequency 25, 26
Large-signal differential voltage amplification vs Free-air temperature 27, 28
zo Output impedance vs Frequency 29, 30
CMRR Common mode rejection ratiovs Frequency 31
CMRR Common-mode rejection ratiovs Frequencyvs Free-air temperature
3132
k Supply voltage rejection ratiovs Frequency 33, 34
kSVR Supply-voltage rejection ratiovs Frequencyvs Free-air temperature
33, 3435
I Supply currentvs Supply voltage 36, 37
IDD Supply currentvs Supply voltagevs Free-air temperature
36, 3738, 39
SR Slew ratevs Load capacitance 40
SR Slew ratevs Load capacitancevs Free-air temperature
4041
Inverting large-signal pulse response 42, 43
VVoltage-follower large-signal pulse response 44, 45
VO Inverting small-signal pulse response 46, 47
Voltage-follower small-signal pulse response 48, 49
Vn Equivalent input noise voltage vs Frequency 50, 51
Noise voltage over a 10-second period 52
Integrated noise voltage vs Frequency 53
THD + N Total harmonic distortion plus noise vs Frequency 54
Gain bandwidth productvs Supply voltage 55
Gain-bandwidth productvs Supply voltagevs Free-air temperature
5556
φm Phase margin vs Load capacitance 57
Gain margin vs Load capacitance 58
NOTE: For all graphs where VDD = 5 V, all loads are referenced to 2.5 V.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
VIO − Input Offset Voltage − mV
Per
cen
tag
e o
f Am
plif
iers
− %
DISTRIBUTION OF TLC2272INPUT OFFSET VOLTAGE
10
5
0
20
15
−1.6 −1.2 0 0.4 0.8 1.2 1.6
891 Amplifiers From
−0.8 −0.4
2 Wafer LotsVDD = ±2.5 V
TA = 25°C
Figure 1
VIO − Input Offset Voltage − mV
Per
cen
tag
e o
f Am
plif
iers
− %
DISTRIBUTION OF TLC2272INPUT OFFSET VOLTAGE
10
5
0
20
15
−1.6 −1.2 0 0.4 0.8 1.2 1.6−0.8 −0.4
891 Amplifiers From2 Wafer LotsVDD = ±5 VTA = 25°C
Figure 2
Figure 3
VIO − Input Offset Voltage − mV
Per
cen
tag
e o
f Am
plif
iers
− %
DISTRIBUTION OF TLC2274INPUT OFFSET VOLTAGE
10
5
0
20
15
0 0.4 0.8 1.2 1.6
992 Amplifiers From
−1.6 −1.2 −0.8 −0.4
2 Wafer LotsVDD = ±2.5 V
Figure 4
VIO − Input Offset Voltage − mV
Per
cen
tag
e o
f Am
plif
iers
− %
DISTRIBUTION OF TLC2274INPUT OFFSET VOLTAGE
10
5
0
20
15
0 0.4 0.8 1.2 1.6
992 Amplifiers From
−1.6 −1.2 −0.8 −0.4
2 Wafer LotsVDD = ±5 V
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.5
0
−1−1 0 1
VIO
− In
pu
t O
ffse
t Vo
ltag
e −
mV
1
2 3 4 5
VIO
VIC − Common-Mode Voltage − V
VDD = 5 VTA = 25°CRS = 50 Ω
−0.5
INPUT OFFSET VOLTAGEvs
COMMON-MODE VOLTAGE
Figure 5
0.5
0
−1−1 0 1
VIO
− In
pu
t O
ffse
t Vo
ltag
e −
mV
1
2 3 4 5
INPUT OFFSET VOLTAGEvs
COMMON-MODE VOLTAGE
VIC − Common-Mode Voltage − V
VIO −0.5
VDD = ±5 VTA = 25°CRS = 50 Ω
−6 −5 −4 −3 −2
Figure 6
15
10
5
0−1 0 1
Per
cen
tag
e o
f Am
plif
iers
− %
20
25
2 3 4 5
DISTRIBUTION OF TLC2272vs
INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†
αVIO − Temperature Coefficient − μV/°C
128 Amplifiers From2 Wafer LotsVDD = ±2.5 VP Package25°C to 125°C
−5 −4 −3 −2
Figure 7
−5 −4 −3 −2
15
10
5
0−1 0 1
Per
cen
tag
e o
f Am
plif
iers
− %
20
25
2 3 4 5
DISTRIBUTION OF TLC2272vs
INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†
αVIO − Temperature Coefficient − μV/°C
128 Amplifiers From2 Wafer LotsVDD = ±5 VP Package25°C to 125°C
Figure 8
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
15
10
5
00 1
Per
cen
tag
e o
f Am
plif
iers
− %
20
25
2 3 4 5
DISTRIBUTION OF TLC2274vs
INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†
αVIO − Temperature Coefficient − μV/°C
−5 −4 −3 −2 −1
128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C
Figure 9
15
10
5
0
Per
cen
tag
e o
f Am
plif
iers
− %
20
25
DISTRIBUTION OF TLC2274vs
INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†
αVIO − Temperature Coefficient − μV/°C
0 1 2 3 4 5−5 −4 −3 −2 −1
128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C
Figure 10
15
10
5
025 45 65 85
20
25
30
105 125
INPUT BIAS AND INPUT OFFSET CURRENT†
vsFREE-AIR TEMPERATURE
TA − Free-Air Temperature − °C
35VDD = ±2.5 VVIC = 0 VVO = 0 VRS = 50 Ω
IIB
IIO
IIB a
nd
IIO
− In
pu
t B
ias
and
Inp
ut
Off
set
Cu
rren
ts −
pA
IBII I
O
Figure 11
0
− 2
− 6
− 8
− 10
8
− 4
2 3 4 5 6 7 8
− In
pu
t Vo
ltag
e −
V
4
2
6
10
INPUT VOLTAGEvs
SUPPLY VOLTAGE
|VDD ±| − Supply Voltage − V
VI
TA = 25°C RS = 50 Ω
|VIO| ≤ 5mV
12
Figure 12
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
−75 − 25 0 25 50 75 100 125
2
1
0
−1
3
4
5
− In
pu
t Vo
ltag
e −
VV
I
INPUT VOLTAGE†
vsFREE-AIR TEMPERATURE
TA − Free-Air Temperature − °C
|VIO| ≤ 5mV
VDD = 5 V
− 50
Figure 13
V0H
− H
igh
-Lev
el O
utp
ut
Volt
age
− V
VO
H
IOH − High-Level Output Current − mA
4
2
1
0
6
3
0 1 2 3 4
5
HIGH-LEVEL OUTPUT VOLTAGE†
vsHIGH-LEVEL OUTPUT CURRENT
VDD = 5 V
TA = 125°C
TA = −55°C
TA = 25°C
Figure 14
VO
L −
Lo
w-L
evel
Ou
tpu
t Vo
ltag
e −
V
0.6
0.4
0.2
00 1 2 3
0.8
4 5
VDD = 5 VTA = 25°C
IOL − Low-Level Output Current − mA
V OL
VIC = 1.25 V
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
1
1.2
VIC = 2.5 V
Figure 15
VIC = 0 V
LOW-LEVEL OUTPUT VOLTAGE†
vsLOW-LEVEL OUTPUT CURRENT
VO
L −
Lo
w-L
evel
Ou
tpu
t Vo
ltag
e −
V
IOL − Low-Level Output Current − mA
VO
L
0.6
0.4
0.2
00 1 2 3
0.8
4
1
1.2
5 6
1.4VDD = 5 V VIC = 2.5 V
TA = 125°C
TA = 25°C
TA = −55°C
Figure 16
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
3
2
10 1 2 3 4 5
− M
axim
um
Po
siti
ve P
eak
Ou
tpu
t Vo
ltag
e −
V
4
5
MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE†
vsOUTPUT CURRENT
|IO| − Output Current − mA
TA = −55°C
TA = 25°C
TA = 125°C
VDD ± = ±5 V
VO
M +
Figure 17
0 1 2 3 4 5 6
IO − Output Current − mA
MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE†
vsOUTPUT CURRENT
VDD = ±5 VVIC = 0 V
TA = 125°C
TA = 25°C
TA = −55°C
−3.8
−4
−4.2
−4.4
−4.6
−4.8
−5
− M
axim
um
Neg
ativ
e P
eak
Ou
tpu
t Vo
ltag
e −
VV
OM
−
Figure 18
Figure 19
2
1
010 k 100 k 1 M
3
f − Frequency − Hz
4
10 M
6
5
7
8
9
10
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs
FREQUENCY
V(O
PP
) −
Max
imu
m P
eak-
to-P
eak
Ou
tpu
t Vo
ltag
e −
VV
O(P
P)
VDD = 5 V
VDD = ±5 V
RL = 10 kΩTA = 25°C
Figure 20
4
0
2 3 4
8
12
16
5 6 7 8
IOS
− S
ho
rt-C
ircu
it O
utp
ut
Cu
rren
t −
mA
OS
I
|VDD ±| − Supply Voltage − V
SHORT-CIRCUIT OUTPUT CURRENTvs
SUPPLY VOLTAGE
VID = 100 mV
VO = 0 VTA = 25°C
−8
VID = −100 mV
−4
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
−5
SHORT-CIRCUIT OUTPUT CURRENT†
vsFREE-AIR TEMPERATURE
−75 −50 −25 0 25 50 75 100 125
−1
−3
7
11
15
IOS
− S
ho
rt-C
ircu
it O
utp
ut
Cu
rren
t −
mA
OS
I
TA − Free-Air Temperature − °C
VID = 100 mV
VID = −100 mV
VO = 0 VVDD = ±5 V
Figure 21
OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
3
2
1
0800
4
5
1200
VID − Differential Input Voltage − μV
− O
utp
ut
Volt
age
− V
V O−800 −400 4000
VDD = 5 VTA = 25°CRL = 10 kΩVIC = 2.5 V
Figure 22
1
−1
−3
−50 250
3
5
OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
500 750 1000VID − Differential Input Voltage − μV
− O
utp
ut
Volt
age
− V
VO
−1000 −750 −250−500
Figure 23
VDD = ±5 VTA = 25°CRL = 10 kΩVIC = 0 V
0.1
1
0.1 1 10 100
10
100
1000
LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION
vsLOAD RESISTANCE
RL − Load Resistance − kΩ
VO = ±1 VTA = 25°C
VDD = ±5 V
VDD = 5 V
Figure 24
AV
D −
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
D Vo
ltag
e A
mp
lific
atio
n −
dB
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0
20
1 k 10 k 100 k 1 M
40
60
80
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN
vsFREQUENCY
f − Frequency − Hz
10 M
om
− P
has
e M
arg
in
φ m
VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°C
−20
−40 −90°
−45°
0°
45°
90°
135°
180°A
VD
− L
arg
e-S
ign
al D
iffe
ren
tial
ÁÁÁÁÁÁ
AV
D Vo
ltag
e A
mp
lific
atio
n −
dB
Figure 25
0
20
1 k 10 k 100 k 1 M
40
60
80
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN
vsFREQUENCY
f − Frequency − Hz10 M
VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°C
om
− P
has
e M
arg
in
φ m
−20
−40 −90°
−45°
0°
45°
90°
135°
180°
AV
D −
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
D Vo
ltag
e A
mp
lific
atio
n −
dB
Figure 26
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TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION†
vsFREE-AIR TEMPERATURE
−75 −50 −25 0 25 50 75 100 12510
100
1 k
TA − Free-Air Temperature − °C
VDD = 5 VVIC = 2.5 VVO = 1 V to 4 V
RL = 1 MΩ
RL = 10 kΩ
AV
D −
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
− V
/mV
Figure 27
LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION†
vsFREE-AIR TEMPERATURE
−75 −50 −25 0 25 50 75 100 12510
100
1 k
TA − Free-Air Temperature − °C
RL = 1 MΩ
RL = 10 kΩ
VDD = ±5 VVIC = 0 VVO = ± 4 V
AV
D −
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
− V
/mV
Figure 28
10
1
0.1
1000
100
100 1 k 10 k 100 k 1 M
zo −
Ou
tpu
t Im
ped
ance
− O
f − Frequency − Hz
Ωz o
OUTPUT IMPEDANCEvs
FREQUENCY
VDD = 5 VTA = 25°C
AV = 100
AV = 10
AV = 1
Figure 29
10
1
0.1
1000
100
100 1 k 10 k 100 k 1 M
zo −
Ou
tpu
t Im
ped
ance
− O
f − Frequency − Hz
Ωz o
OUTPUT IMPEDANCEvs
FREQUENCY
VDD = ±5 VTA = 25°C
AV = 100
AV = 10
AV = 1
Figure 30
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
COMMON-MODE REJECTION RATIOvs
FREQUENCY
60
40
20
010 100 1 k 10 k
CM
RR
− C
om
mo
n-M
od
e R
ejec
tio
n R
atio
− d
B
80
100
100 k 1 M
f − Frequency − Hz
VDD = ±5 V
VDD = 5 V
10 M
TA = 25°C
Figure 31
TA − Free-Air Temperature − °C
CM
RR
− C
om
mo
n-M
od
e R
ejec
tio
n R
atio
− d
B
COMMON-MODE REJECTION RATIOvs
FREE-AIR TEMPERATURE
82
78
74
70
86
90
−75 −50 −25 0 25 50 75 100 125
VDD = ±5 V
VDD = 5 V
VIC = 0 V to 2.7 V
VIC = −5 V to 2.7 V
Figure 32
40
20
0
10 100 1 k
kSV
R −
Su
pp
ly-V
olt
age
Rej
ecti
on
Rat
io −
dB
60
80
f − Frequency − Hz
100
10 k 100 k 1 M 10 M
SUPPLY-VOLTAGE REJECTION RATIOvs
FREQUENCY
kS
VR
VDD = 5 VTA = 25°C
kSVR+
kSVR −
−20
Figure 33
40
20
0
10 100 1 k
kSV
R −
Su
pp
ly-V
olt
age
Rej
ecti
on
Rat
io −
dB
60
80
f − Frequency − Hz
100
10 k 100 k 1 M 10 M
SUPPLY-VOLTAGE REJECTION RATIOvs
FREQUENCY
kS
VR
VDD = ±5 VTA = 25°C
kSVR+
kSVR −
−20
Figure 34
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TYPICAL CHARACTERISTICSkS
VR
− S
up
ply
Vo
ltag
e R
ejec
tio
n R
atio
− d
B
SUPPLY VOLTAGE REJECTION RATIO†
vsFREE-AIR TEMPERATURE
kS
VR
TA − Free-Air Temperature − °C−75 −50 −25 0 25 50 75 100 125
100
95
90
85
105
110VDD ± = ±2.2 V to ±8 VVO = 0 V
Figure 35
0 1 2 3 4 5 6 7 80
0.6
1.2
1.8
2.4
3
IDD
− S
up
ply
Cu
rren
t −
mA
DD
I
|VDD ± | − Supply Voltage − V
VO = 0 VNo Load
TA = 25°C
TA = −55°C
TA = 125°C
Figure 36
TLC2272SUPPLY CURRENT†
vsSUPPLY VOLTAGE
Figure 37
0 1 2 3 4 5 6 7 80
1.2
2.4
3.6
4.8
6
IDD
− S
up
ply
Cu
rren
t −
mA
DD
I
|VDD ± | − Supply Voltage − V
VO = 0 VNo Load
TA = 25°C
TA = −55°C
TA = 125°C
TLC2274SUPPLY CURRENT†
vsSUPPLY VOLTAGE
Figure 38
−75 −50 −25 0 25 50 75 100 1250
0.6
1.2
1.8
2.4
3
TA − Free-Air Temperature − °C
IDD
− S
up
ply
Cu
rren
t −
mA
DD
I
VDD = 5 VVO = 2.5 V
VDD = ±5 VVO = 0 V
TLC2272SUPPLY CURRENT†
vsFREE-AIR TEMPERATURE
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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TYPICAL CHARACTERISTICS
Figure 39
−75 −50 −25 0 25 50 75 100 1250
1.2
2.4
3.6
4.8
6
TA − Free-Air Temperature − °C
IDD
− S
up
ply
Cu
rren
t −
mA
DD
I
VDD = 5 VVO = 2.5 V
VDD = ±5 VVO = 0 V
TLC2274SUPPLY CURRENT†
vsFREE-AIR TEMPERATURE
μs
SR
− S
lew
Rat
e −
V/
0
1
2
3
CL − Load Capacitance − pF
SLEW RATEvs
LOAD CAPACITANCE
10 k1 k10010
SR +
SR −
4
5VDD = 5 VAV = −1TA = 25°C
Figure 40
3
2
1
4
μsS
R −
Sle
w R
ate
− V
/
−75 −50 −25 0 25 50 75 100 125
TA − Free-Air Temperature − °C
SLEW RATE†
vsFREE-AIR TEMPERATURE
VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1
SR +
SR −
0
5
Figure 41
INVERTING LARGE-SIGNAL PULSE RESPONSE
2
1
01 2 3 4 5
3
4
5
6 7 8 9
VO
− O
utp
ut
Volt
age
− m
VV
O
t − Time − μs
VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1
0
Figure 42
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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TYPICAL CHARACTERISTICS
0
− 1
− 3
− 4
− 5
4
− 2
1 2 3 4 5
2
1
3
5
6 7 8 9
VO
− O
utp
ut
Volt
age
− V
V O
t − Time − μs
VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1
INVERTING LARGE-SIGNAL PULSE RESPONSE
0
Figure 43
3
2
1
01 2 3 4 5
4
5
6 7 8 9V
O −
Ou
tpu
t Vo
ltag
e −
VV
Ot − Time − μs
VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1TA = 25°C
VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE
0
Figure 44
VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE
0
−1
4
1 2 3 4 5
2
1
3
5
6 7 8 9
VO
− O
utp
ut
Volt
age
− V
VO
t − Time − μs
VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1
0
−2
−3
−5
−4
Figure 45
INVERTING SMALL-SIGNAL PULSE RESPONSE
2.5
2.45
2.40.5 1 1.5 2 2.5
2.55
2.6
2.65
3.5 4.5 5 5.5
VO
− O
utp
ut
Volt
age
− V
VO
t − Time − μs
VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1
0 3 4
Figure 46
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TYPICAL CHARACTERISTICS
0
−1000 0.5 1 1.5 2
50
100
2.5 3 3.5 4
VO
− O
utp
ut
Volt
age
− m
VV O
t − Time − μs
INVERTING SMALL-SIGNAL PULSE RESPONSE
VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1
−50
Figure 47
VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE
2.5
2.45
2.4
2.55
2.6
0 0.5 1 1.5
VO
− O
utp
ut
Volt
age
− V
VO
t − Time − μs
2.65VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1
Figure 48
VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE
0
−50
−100
50
100
0 0.5 1 1.5
VO
− O
utp
ut
Volt
age
− m
VV
O
t − Time − μs
VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1
Figure 49
20
10
010 100 1 k
Vn
− E
qu
ival
ent
Inp
ut
No
ise
Volt
age
− n
V H
z
30
f − Frequency − Hz
40
10 k
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
50
60
Vn
nV
/H
z VDD = 5 VTA = 25°CRS = 20 Ω
Figure 50
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TYPICAL CHARACTERISTICS
20
10
010 100 1 k
Vn
− E
qu
ival
ent
Inp
ut
No
ise
Volt
age
− n
V H
z
30
f − Frequency − Hz
40
10 k
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
50
60
Vn
nV
/H
z
VDD = ±5 VTA = 25°CRS = 20 Ω
Figure 51
−750
−10002 4 6
0
250
8 10N
ois
e Vo
ltag
e −
nV
t − Time − s
NOISE VOLTAGEOVER A 10 SECOND PERIOD
0
VDD = 5 Vf = 0.1 Hz to 10 HzTA = 25°C
500
750
1000
−250
−500
Figure 52
Inte
gra
ted
No
ise
Volt
age
− u
VR
MS
1
0.1
100
1 10 100 1 k
f − Frequency − Hz
INTEGRATED NOISE VOLTAGEvs
FREQUENCY
10 k 100 k
VR
MS
μ
Calculated UsingIdeal Pass-Band FilterLower Frequency = 1 HzTA= 25°C
10
Figure 53
0.0001
0.001
100 1 k 10 k 100 k
TH
D +
N −
To
tal H
arm
on
ic D
isto
rtio
n P
lus
No
ise
− %
f − Frequency − Hz
TOTAL HARMONIC DISTORTION PLUS NOISEvs
FREQUENCY
0.01
0.1
1VDD = 5 VTA = 25°CRL = 10 kΩ
AV = 100
AV = 10
AV = 1
Figure 54
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28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 55
Gai
n-B
and
wid
th P
rod
uct
− M
Hz
2.1
20 1 2 3 4 5
2.2
2.3
6 7 8|VDD ±| − Supply Voltage − V
2.4
2.5
GAIN-BANDWIDTH PRODUCTvs
SUPPLY VOLTAGE
f = 10 kHzRL = 10 kΩCL = 100 pFTA = 25°C
Figure 56
−75 −50 −25 0 25 50 75 100 125TA − Free-Air Temperature − °C
Gai
n-B
and
wid
th P
rod
uct
− M
Hz
GAIN-BANDWIDTH PRODUCT†
vsFREE-AIR TEMPERATURE
1.8
1.6
1.4
2
2.4
2.2
2.6
2.8
3VDD = 5 Vf = 10 kHzRL = 10 kΩCL = 100 pF
10
om
− P
has
e M
arg
in
10000CL − Load Capacitance − pF
φm
PHASE MARGINvs
LOAD CAPACITANCE
1000100
VDD = ±5 VTA = 25°C
Rnull = 20 Ω
Rnull = 10 Ω
Rnull = 0
75°
60°
45°
30°
15°
0°
10 kΩ
10 kΩ
VDD −
VDD +Rnull
CL
VI
Rnull = 100 Ω
Rnull = 50 Ω
Figure 57 Figure 58
3
010
Gai
n M
arg
in −
dB
6
9
10000CL − Load Capacitance − pF
12
15
GAIN MARGINvs
LOAD CAPACITANCE
1000100
VDD = 5 VAV = 1RL = 10 kΩTA = 25°C
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts™ , the model generation software usedwith Microsim PSpice™. The Boyle macromodel (see Note 5) and subcircuit in Figure 59 were generated usingthe TLC227x typical electrical and operating characteristics at TA = 25°C. Using this information, outputsimulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
� Maximum positive output voltage swing� Maximum negative output voltage swing� Slew rate� Quiescent power dissipation� Input bias current� Open-loop voltage amplification
� Unity gain frequency� Common-mode rejection ratio� Phase margin� DC output resistance� AC output resistance� Short-circuit output current limit
NOTE 5: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journalof Solid-State Circuits, SC-9, 353 (1974).
OUT
+
−
+
−
+
−
+
−
+−
+
−
+
− +
−
+−
.SUBCKT TLC227x 1 2 3 4 5C1 11 1214E−12C2 6 760.00E−12DC 5 53DXDE 54 5DXDLP 90 91DXDLN 92 90DXDP 4 3DXEGND 99 0POLY (2) (3,0) (4,) 0 .5 .5FB 99 0POLY (5) VB VC VE VLP VLN 0+ 984.9E3 −1E6 1E6 1E6 −1E6GA 6 011 12 377.0E−6GCM 0 6 10 99 134E−9ISS 3 10DC 216.OE−6HLIM 90 0VLIM 1KJ1 11 210 JXJ2 12 110 JXR2 6 9100.OE3
RD1 60 112.653E3RD2 60 122.653E3R01 8 550R02 7 9950RP 3 44.310E3RSS 10 99925.9E3VAD 60 4−.5VB 9 0DC 0VC 3 53 DC .78VE 54 4DC .78VLIM 7 8DC 0VLP 91 0DC 1.9VLN 0 92DC 9.4.MODEL DX D (IS=800.0E−18).MODEL JX PJF (IS=1.500E−12BETA=1.316E-3+ VTO=−.270).ENDS
VCC +
RP
IN −2
IN+1
VCC −
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM GA VLIM
8
5
RO1
RO2
HLIM
90
DIP
91
DIN
92
VINVIP
99
7
Figure 59. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,directly or indirectly, are not warranted by TI as fully representing allof the specification and operating characteristics of thesemiconductor product to which the model relates.
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type PackageDrawing
Pins Package Qty Eco Plan (2) Lead/Ball Finish
MSL Peak Temp (3) Samples
(Requires Login)
TLC2272AQDRG4Q1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272AQDRQ1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272AQPWRG4Q1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272AQPWRQ1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272QDRG4Q1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272QDRQ1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272QPWRG4Q1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2272QPWRQ1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274AQDRG4Q1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274AQDRQ1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274AQPWRG4Q1 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274AQPWRQ1 ACTIVE TSSOP PW 14 2000 TBD CU NIPDAU Level-1-250C-UNLIM
TLC2274QDRG4Q1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274QDRQ1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274QPWRG4Q1 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC2274QPWRQ1 ACTIVE TSSOP PW 14 2000 TBD CU NIPDAU Level-1-250C-UNLIM (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 2
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLC2272-Q1, TLC2272A-Q1, TLC2274-Q1, TLC2274A-Q1 :
• Catalog: TLC2272, TLC2272A, TLC2274, TLC2274A
• Enhanced Product: TLC2272A-EP, TLC2274-EP, TLC2274A-EP
• Military: TLC2272M, TLC2272AM, TLC2274M, TLC2274AM
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
• Enhanced Product - Supports Defense, Aerospace and Medical Applications
• Military - QML certified for Military and Defense Applications
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www.BDTIC.com/TI
www.BDTIC.com/TI
www.BDTIC.com/TI
www.BDTIC.com/TI
www.BDTIC.com/TI
www.BDTIC.com/TI
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