ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3...

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ADS Design Guide

Transcript of ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3...

Page 1: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

ADS Design Guide

Page 2: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

Example (VCO)

Page 3: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

Example (VCO)

Page 4: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

Low-noise amplifier

TSMC 0.18 m CMOS process

Frequency: 2.4 GHz

3 dB B.W.: > 500 MHz

DC consumption: < 20 mW, 1.8 V

S21: > 15 dB

S11/S22: < -10 dB

N.F.: < 2 dB

P1dB: > -5 dBm

IIP3: > 5 dBm

Page 5: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

Down-conversion Mixer

fRF: 2.4 GHz, fLO: 2.3 GHz, fIF: 100 MHz

DC consumption: < 10 mW, 1.8 V

Conversion gain: > 5 dB @ LO power=-3 dBm

S11/S22: < -10 dB

Port-to-port isolation: > 20 dB

P1dB: > -5 dBm

IIP3: > 5 dBm

TSMC 0.18 m CMOS process

Page 6: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

LC voltage-controlled oscillator

Center frequency: 2.4 GHz

DC consumption: < 30 mW, 1.8 V, with output buffer

Tuning range: > 1 GHz

Output power: > 0 dBm

Harmonic suppression: > 15 dBc

Phase noise: < -120 dBc/Hz@1 MHz

TSMC 0.18 m CMOS process

Page 7: ADS Design Guide. Example (VCO) Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz 3 dB B.W.: > 500 MHz DC consumption: < 20 mW, 1.8.

RF switch circuit

WIN 0.15 m pHEMT process

Single-pole-double-throw

Frequency: 1~5 GHz

Insertion loss: < 1.5 dB

S11/S22: < -10 dB

Isolation: > 25 dB

P1dB: > 25 dBm

IIP3: > 35 dBm

Harmonic suppression: > 30 dBc


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