Actividades de I+D enIGFAE/USC

Actividades de I+DenIGFAE/USC Pablo Vzquez (IGFAE-USC)

IV JORNADAS SOBRE LA PARTICIPACIN ESPAOLA EN FUTUROS ACELERADORES LINEALESMadrid, 2-3 Diciembre 2009

Barcelona, 7-8 May 2009

P. Vzquez

R&D activities at SantiagoR&D in pixel detectorsR&D in microstrip silicon detectorsDEPFET projectBelle II PXD PS systemSensor characterization (Lab, testbeams)Gamma irradiation (Co-60)FTD simulations

Dedicated personnel : 5 FTEPablo Vzquez, Abraham Gallas, Daniel Esperante, Jevgenij Visniakov, Carmen Iglesias, Eliseo Prez, Javier Caride*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

R&D in pixel detectorsCERN + LHCb + Timepix/Medipix collaboration2 test beams summer 2009 at CERNTelescope (6) + DUT made with Timepix55 um pixel size300 um thicknessHit resolution ~5 umTrack resolution ~2.6 um

*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

R&D in pixel detectorsTimepix/Medipix collaboration is working in adapting the Timepix ASIC for HEP experimentsSince we have obtained very good results in testbeamsThe LHCb VELO upgrade group has decided to choose the timepix as baseline pixel solutionLHCb + Timepix/Medipix has decided to build an upgraded version of the Timepix telescope (funding partially requested to AIDA WP9)



P. Vzquez

R&D in pixel detectorsUSC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors2D sensors thinned up to 200, 150 and 100 umTo be readout with the Timepix and characterized as function of the thicknessCharge sharing Efficiency Time of arrival measurementsSensors are being produced nowBump-bonding tryout also at CNMPossible design variations under discussionElongated pixels at 1st row, edgless, gard rings*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

R&D in pixel and microstrips silicon sensorsTelescope based on Timepix with following characteristicsActive area: 2.8x2.8 cm2Resolucion: 2 um, 1 nsReadout rate: 75 kHz

To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USCTiming Unit, integration of the DUT daq in the DAQ of the telescopeMechanics of the DUTCold box to work with irradiated sensors in the test beam



P. Vzquez

R&D in microstrip silicon detectorsIn case the pixel option cannot meet the physics and time scale requirements, the silicon strip option should hold for LHCb VELO upgradeThe strip option should stay as close as possible to the current design improving its performance40 MHz readoutHigher granularity (x10 luminosity increase)Impact Parameter resolutionRadiation hardnessUSC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERNVery useful for the FTD conception of ILC

IV jornadas FLC, Madrid, 2-3 Dec 2009*


P. Vzquez

R&D in microstrip silicon detectors1 module assembled in Santiago to be tested in the lab and in testbeamIT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsu sensor

IV jornadas FLC, Madrid, 2-3 Dec 2009*


P. Vzquez

DEPFET: Belle II PXD PS system*IV jornadas FLC, Madrid, 2-3 Dec 200950cm2m44 half-modules17 voltages per half-moduleRegulation cards on radiation and B-field enviroment22 x half-module


P. Vzquez

DEPFET: Belle II PXD PS system*IV jornadas FLC, Madrid, 2-3 Dec 2009Regul.DHHPXDPSRegul.DHHPSElectronicshutNo radiation~krad + H fieldBelle layout750 voltages1500 lines> 500W


P. Vzquez

DEPFET: sensor characterizationLab testGain (radioactive source), charge collection (laser)Dependence with radiation*IV jornadas FLC, Madrid, 2-3 Dec 2009241Am sourceon aPXD5 matrix


P. Vzquez

DEPFET: sensor characterizationTestbeamsTB09 data taking and analysisFuture testbeamsIrradiated modulePower supply prototype*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

DEPFET: 2009 test beam analysis*IV jornadas FLC, Madrid, 2-3 Dec 2009Eutelescopeframeworkinstalled, someprocesorsworking


P. Vzquez

Gamma irradiationFailed depfet PXD5 module irradiation this summerModule dead before irradiation

PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10MradPXD6 matrices will be irradiated next year*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

ASIC developmentIn collaboration with Grupo de Vision Artificial at USC a project was submitted to Xunta de Galicia to be produced byTezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applicationsCMOS 3D 130nm technology64x64 pixels of 40x40 um pixel size4 layersSensor: pn diodeSignal conditioning: amplification, test pulse, comparatorSignal processing: time stamping, counter, time over threshold, 8bit memoryReadoutPossible incorporation of 2 members of this group to the R&D for FLC project in 2013*IV jornadas FLC, Madrid, 2-3 Dec 2009


P. Vzquez

ILC Forward Tracking Disks Simulations*IV jornadas FLC, Madrid, 2-3 Dec 2009Hit densities have been determined with the new geometry (ILD_00), magnetic field (3.5T) and software for each diskBaseline 3 inner disks with pixel 4 outer disks with stripsDensity: nhit/cm2/BX (1BX=1event)

Muon1GeVMuon10 GeVMuon100 GeVTtbarFTD_12.03* 10-42.07 * 10-42.03 *10-41.09*10-2FTD_21.33*10-41.38 * 10-41.35 * 10-46.34 *10-3FTD_33.84*10-53.75 *10-53.78 *10-52.39 *10-3FTD_42.92*10-52.70 * 10-52.67*10-52.32 *10-3FTD_52.33 *10 -51.86 *10-51.89 *10-51.99 *10-3FTD_62.11 *10-51.32 *10-51.37 *10-51.79 *10-3FTD_71.85 *10-59.95 *10-61.05 *10-51.65 *10-3


P. Vzquez

ILC Forward Tracking Disks SimulationsDisk segmentation in petals has also been optimized with the constrain of the wafer size Hit density more uniform than a simple 8 petal/disk segmentation

*IV jornadas FLC, Madrid, 2-3 Dec 2009According to the hit density disk 3 should probably have the same technology than the outer disks

nhits/cm2/BX Area cm2Muons 1 GeVMuons 10 GeVMuons 100GeVTtbar-> bbcsscFTD_1 (8 pet) 99.61.90 *10-42.14 * 10-42.11 * 10-41.06 *10-2FTD_2 ( 8 pet)99.131.12 *10-41.35 *10 -41.36*10 -46.01 *10-3FTD_3 (20pet)165.933.01 * 10-52.94*10-53.56 *10-52.56 *10 -3FTD_4 (16 pet)167.722.35* 10-52.61 *10-52.67 *10-52.07 * 10-3FTD_5 (16 pet)154.132.23 * 10-51.65*10-51.65*10-51.98 * 10-3FTD_6 (16 pet)136.932.67* 10-51.69 *10-51.37 *10-51.81 *10-3FTD_7 (16 pet)116.192.02*10-51.42 *10-58.39 *10-61.67 * 10-3


P. Vzquez

Summary on R&D activities in the USCR&D in pixel detectorsR&D in microstrips silicon detectorsDEPFET projectBelle II PXD PS systemSensor characterization (Lab, testbeams)Gamma irradiation (Co-60)FTD simulations*IV jornadas FLC, Madrid, 2-3 Dec 2009


Actividades de I+D enIGFAE/USC

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