ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC
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ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC Fabricated a high-performance MOSFETs in SiC that can operate up to 300°C Received Patent on this technology COMMERCIALIZATION Increased SiC material and device sales by >$3M Created 12 new jobs and saved existing jobs Initiated tremendous worldwide interest in the area of SiC power semiconductors, resulting in multi-$M programs in SiC MOSFETs for government and commercial labs Total market potential for SiC Power MOSFETs would be >$2B Cree Research, Inc. Durham, NC Small Business Innovation Research GOVERNMENT/SCIENCE APPLICATIONS Will be used in aircraft engines Applicable for high temperature electronics in space craft and will reduce weight and size of spacecraft Can be used to replace Silicon power devices in power circuits for electric motors and power control, for electric vehicles, robotics, and power supplies SiC MOSFETs offer much higher efficiencies than silicon in these applications. Potential power savings of >$1B/yr are possible Lewis Research Center Instrumentation and Controls 3-021 High Temperature, Silicon Carbide, Power MOSFET Cross-Section of a SiC Power MOSFET INNOVATION 1988 Phase II, NAS3-25956 , 9/98 NASA Contact - Lawrence Matus Company Contact - John Palmour A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC)
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High Temperature, Silicon Carbide, Power MOSFET. S mall B usiness I nnovation R esearch. Cree Research, Inc. Durham, NC. INNOVATION. A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC). ACCOMPLISHMENTS - PowerPoint PPT Presentation
Transcript of ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC
ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC
Fabricated a high-performance MOSFETs in SiC that can operate up to 300°C
Received Patent on this technology
COMMERCIALIZATION
Increased SiC material and device sales by >$3M
Created 12 new jobs and saved existing jobs
Initiated tremendous worldwide interest in the area of SiC power semiconductors, resulting in multi-$M programs in SiC MOSFETs for government and commercial labs
Total market potential for SiC Power MOSFETs would be >$2B
Cree Research, Inc.Durham, NC
SmallBusinessInnovation Research
GOVERNMENT/SCIENCE APPLICATIONS
Will be used in aircraft engines
Applicable for high temperature electronics in space craft and will reduce weight and size of spacecraft
Can be used to replace Silicon power devices in power circuits for electric motors and power control, for electric vehicles, robotics, and power supplies
SiC MOSFETs offer much higher efficiencies than silicon in these applications. Potential power savings of >$1B/yr are possible
Lewis Research CenterInstrumentation and Controls3-021
High Temperature, Silicon Carbide,Power MOSFET
Cross-Section of a SiC Power MOSFET
INNOVATION
1988 Phase II, NAS3-25956 , 9/98NASA Contact - Lawrence MatusCompany Contact - John Palmour
A process for producing high performance power metal/oxide semiconductor field-effect transistors
(MOSFETs) in Silicon Carbide (SiC)
