Abstract Preparation AgInS2-Linh

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Preparation of AgInS2 nanoparticles by many method; study of optical catalyst for oxidation dibenzothiophene in fuel. Professor Nui Ph.X, Linh Tr.D, Thang M.X, Ha Ng.H, Giang Ng.T Abstract In this work, AgInS 2 (AIS) semiconductor nanoparticles were synthesized by 3 environmentally friendly method: microwave heating technique; solvothermal synthesis approach and hot press method using ethylene glycol (EG ) as solvent. The effect of the synthesis method and ratio of the capping agent with the precursors on the structural and morphology of the synthesized nanoparticles were analyzed through X-ray Diffraction, UV– vis analysis, Energy Dispersive X-ray fluorescence spectroscopy and Scanning Electron Microscope. These results confirmed that the AgInS 2 compound can be crystallized in two different phases, it’s average particle size is about 20-30 nm and two different phases also have the direct band gap energy in the range of 1,8-1,9 eV. Moreover, to improve the efficiency of the optical properties of this material, to modify the band gap its, doping with Fe into AgInS2 photocatalyst has been performed by us. Photocatalytic oxidation of dibenzothiophene (DBT) using AgInS 2 has been studied. Photooxidized products of DBT are DBT 5-oxide, DBT 5,5-dioxide and SO 4 2- .

Transcript of Abstract Preparation AgInS2-Linh

Page 1: Abstract Preparation AgInS2-Linh

Preparation of AgInS2 nanoparticles by many method; study of optical catalyst for

oxidation dibenzothiophene in fuel.

Professor Nui Ph.X, Linh Tr.D, Thang M.X, Ha Ng.H, Giang Ng.T

Abstract

In this work, AgInS2 (AIS) semiconductor nanoparticles were synthesized by 3

environmentally friendly method: microwave heating technique; solvothermal synthesis

approach and hot press method using ethylene glycol (EG ) as solvent. The effect of the

synthesis method and ratio of the capping agent with the precursors on the structural and

morphology of the synthesized nanoparticles were analyzed through X-ray Diffraction, UV–

vis analysis, Energy Dispersive X-ray fluorescence spectroscopy and Scanning Electron

Microscope. These results confirmed that the AgInS2 compound can be crystallized in two

different phases, it’s average particle size is about 20-30 nm and two different phases also

have the direct band gap energy in the range of 1,8-1,9 eV. Moreover, to improve the

efficiency of the optical properties of this material, to modify the band gap its, doping with Fe

into AgInS2 photocatalyst has been performed by us. Photocatalytic oxidation of

dibenzothiophene (DBT) using AgInS2 has been studied. Photooxidized products of DBT are

DBT 5-oxide, DBT 5,5-dioxide and SO42-.