A Route to Developing Superconducting Nano-Devices

11/12/2015 Aroutetodevelopingsuperconductingnanodevices

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Posted:Jun02,2015

Aroutetodevelopingsuperconductingnanodevices(NanowerkNews)AresearchgroupatTohokuUniversityhassucceededinfabricatinganatomicallythin,hightemperaturesuperconductorfilmwithasuperconductingtransitiontemperature(Tc)ofupto60K(213C).Theteam,

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ledbyProf.TakashiTakahashi(WPIAIMR)andAsst.Prof.KosukeNakayama(Dept.ofPhysics),alsoestablishedthemethodtocontrol/tunetheTc.

Thisfindingnotonlyprovidesanidealplatformforinvestigatingthemechanismofsuperconductivityinthetwodimensionalsystem,butalsopavesthewayforthedevelopmentofnextgenerationnanoscalesuperconductingdevices.

TheresearchresultswerepublishedinNatureMaterialsonJune1,2015("HightemperatureSuperconductivityinPotassiumcoatedMultilayerFeSeThinFilms").

Fig.1:Blueandgreencirclesindicateiron(Fe)andselenium(Se)atoms,respectively.Thesuperconductingtransitiontemperatureistunedbyintroducingelectronsbydepositingpotassiumatoms(orangecircles)onthesurface.Yellow

circlesrepresentapairofsuperconductingelectrons(Cooperpair).(Image:TakashiTakahashi)

Background

Superconductorsareregardedasoneofthemostpromisingcandidatesfornextgenerationadvancedelectronicdevices,becausetheuniquequantumeffectsinsuperconductorsareagreatadvantageinachievingtheenergysavingandultrahighspeedprocessing.

However,thedeviceapplicationofsuperconductorshaslongbeenhindered.Thelargestobstacleisthenecessityofahugeandexpensivecoolingsystemwithliquidhelium,becauseofthelowTcofconventionalsuperconductors,whichisclosetoabsolutezero(0K,273C) .Ithasalsobeenabigchallengetorealizethehighdensityintegrationofsuperconductorsintoelectronicdevices.Inordertoovercometheseproblems,itisdefinitelynecessarytodevelopanewsuperconductorwithhigherTc,thatcanbefabricatedintoathinfilm.

TheresearchteamatTohokuUniversityturneditsattentiontoironselenide(FeSe),whichisamemberofironbasedsuperconductors .WhiletheTcofbulkFeSeisonly8K(265C),asignatureofhigherTcsuperconductivityhasbeensuggestedinultrathinfilmanditsverificationhasbeenurgentlyrequired.

Presentresearch

Theresearchersatfirstfabricatedhighquality,atomicallythinFeSefilms[Fig.1],

*1

*2

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withthicknessofbetweenonemonolayer(whichcorrespondstothreeatomsthickness)andtwentymonolayers(sixtyatomsthickness),byusingthemolecularbeamepitaxy(MBE)method .Thentheycarefullyinvestigatedtheelectronicstructureofgrownfilmsbyangleresolvedphotoemissionspectroscopy(ARPES) [Fig.2].

Fig.2:Electronsareemittedfromthesurfacebyshinningultravioletlight.Theelectronicstructureofcrystalisdeterminedbymeasuringtheenergyandthe

emissionangleofelectrons.(Image:TakashiTakahashi)

IntheARPESmeasurement,theresearchersobservedtheopeningofasuperconductinggapatlowtemperature ,whichisdirectevidenceoftheemergenceofsuperconductivityinthefilms.TheresearchersfoundthattheTcestimatedfromthegapclosinginamonolayerfilmissurprisinglyhigh(above60K),whichisabout8timeshigherthantheTcofbulkFeSe.

Whilemultilayerfilmsdonotshowsuperconductivityintheasgrownstate,theresearchershavediscoveredanovelmethodtodepositalkaliatomsontothefilmsandtherebycontroltheelectrondensityinthefilm.Byemployingthismethod,theresearchershavesucceededinconvertingnonsuperconductingmultilayerFeSefilmsintohighTcsuperconductorswithTcashighas~50K.

Perspective

Thepresentresultgivesagreatimpacttoboththebasicandappliedresearchesinsuperconductors.Theresearchershaveclearlyshownhowthesuperconductivityisemerged,enhancedandcontrolledinatomicallythinFeSefilms.WhiletheTcachievedinthisstudy(5060K)isstilllowerthanthatofthecupratehighTcsuperconductors(highestTc135K)whichcausedthehighTcfeverintheworld30yearsago,itobviouslyexceedstherecordofotherhighTcsuperconductorssuchasfullerene(C 0)superconductors(Tc33K)andMgB2(Tc39K),closelyapproachingthetemperatureofliquidnitrogen(77K).

ThepresentreportwouldleadtointensiveresearchestofurtherincreaseTcbychangingthenumberofatomiclayers,theamountofdopedelectronsandthespeciesofsubstrate.Thepresentresultwouldalsowidentherangeofbothbasicandappliedresearchesonsuperconductivity,becausetheTcof5060Kachievedinthepresentstudyishighenoughtokeepthesuperconductingstate

*3

*4

*5

6



byusingaclosedcyclegastypecoolingsystemwithoutliquidhelium.

Thepresentsuccessinfabricatinganatomicallythinhightemperaturesuperconductornotonlyprovidesanidealplatformtoinvestigatethenoveltwodimensionalsuperconductivity,butalsoopensaroutetodevelopinganultimatesuperconductingnanodeviceconsistingofatomicsizeelectronicparts.TheultrathinhighTcsuperconductorwouldeffectivelycontributetothesignificantdownsizingandconsequenthighdensityintegrationinelectriccircuits,leadingtotherealizationoffuturegenerationelectronicdeviceswithhighenergysavingandultrahighspeedoperation.

Notes

*1)K(Kelvin).Aunitoftemperaturebasedontheabsolutescale.ThefollowingrelationconvertsthisscaletothescaleofdegreeCelsius.C=K273.15

*2)Ironbasedsuperconductors.Agroupofsuperconductorsconsistingoftwodimensionalironlayer,whichwasfirstdiscoveredin2008byProf.HideoHosonoatTokyoInstituteofTechnology,Japan.

*3)Molecularbeamepitaxymethod.Amethodofgrowingathin,singlecrystalfilmonasubstrate.Constituentatomsareselectivelyevaporatedanddepositedonasubstrateundervacuuminawellcontrolledmanner.Thismethodhasanadvantageingrowingahighqualitysinglecrystalfilm.

*4)Angleresolvedphotoemissionspectroscopy.Anexperimentaltechniquetodirectlydeterminetheenergyandmomentumofelectronsinsolids.ItisbasedontheexternalphotoelectriceffectpredictedbyEinstein.Recentsignificantimprovementoftheenergyresolutionenablesthepreciseinvestigationofsuperconductingelectrons.

*5)Superconductinggap.Anenergycosttocreateasuperconductingelectronpair(Cooperpair).Themagnitudeisdirectlyobservedbyangleresolvedphotoemissionspectroscopy.

Source:TohokuUniversity

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A Route to Developing Superconducting Nano-Devices

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