A Presentation on Cascadable Adiabatic Logic Circuits for Low-Power applications By Divya Yashwanth.

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A Presentation on Cascadable Adiabatic Logic Circuits for Low-Power applications By Divya Yashwanth

Transcript of A Presentation on Cascadable Adiabatic Logic Circuits for Low-Power applications By Divya Yashwanth.

A Presentation on

Cascadable Adiabatic Logic Circuits

for Low-Power applications

By

Divya Yashwanth

What is an adiabatic circuit ?

Adiabatic circuits are low power circuits which use

"reversible logic" to conserve energy. The term comes

from the fact that an adiabatic process is one in which the

total heat or energy in the system remains constant. Most

research has focused on building adiabatic logic out of

CMOS. However, current CMOS technology, though fairly

energy efficient compared to similar technologies,

dissipate energy as heat, mostly when switching.

Adiabatic circuits attempt to conserve charge by following

two key rules:Never turn on a transistor when there is a voltage

potential between the source and drain.

Never turn off a transistor when current is flowing

through it.

Adiabatic Logic circuits from CMOS

CMOS transistors dissipate power when they switch. The

main part of this dissipation is due to the need to charge

and discharge the gate capacitance C through a component

that has some resistivity R. The energy dissipated when

charging of the gate is

where T is the time it takes the gate to charge or discharge.

In non-reversible circuits, the charging time T is proportional

to RC. Reversible logic uses the fact that a single clock

cycle is much longer then RC and thus attempts to spread

the charging of the gate over the whole cycle and thus

reduces the energy dissipated.

2CVT

RCE

In order to extend the charging time of the gate never turn

on a transistor that has a potential difference between

source and drain, and furthermore, once the transistor is

turned on, energy flows through it in a gradual and

controlled manner.

The second rule that adiabatic circuits must follow is

never to turn off a transistor when there is current flowing

through it because transistors are not perfect switches

going from on to off instantly. Instead, it gradually changes

from on to off when the gate voltage changes.

Furthermore, the change is proportional to the speed at

which the gate voltage changes. During this time, the

voltage drop across the transistor greatly increases yet the

resistance is not high enough to bring power dissipation to

zero.

GFCAL inverter GFCAL means glitch free and

cascadable adiabatic logic

circuits.

This circuit consists of one P-

channel MOSFET and a diode in

parallel with one N-channel

MOSFET and a diode, which in

turn are connected in series with

the load

capacitance C.The supply voltage VDD is a slowly varying triangular

voltage.

The P-channel MOSFET (T1) and diode (D1) provide a

charging path, and the N-channel MOSFET (T2) and diode

(D2) provide a discharging path for the load current.

Operation of the circuit

When the input is ‘0’ (logic ‘0’), T11 is on and T2 is off.

Path

T11, D1 allows the current flow from the supply and the

capacitor becomes charged close to the peak value of VDD,

producing logic ‘1’. The diode D11 does not allow discharge

into the supply when VDD is less than the output voltage.

When the input is logic‘1’, T22 is on and T11 is off. The

path

D2, T2 starts conducting. The diode, D2 prevents charging of

the capacitor since it is reverse biased when VDD >VC and

allows only discharging of the capacitor or pumping of

energy back into the supply when VDD < VC. Thus, the

capacitor voltage is brought down to a low value when the

input is high irrespective of the previous output. Hence, the

output is the complement of the input.

The output voltage level is almost independent of the time at

which the input voltage is applied with respect to the supply

voltage as long as it is applied at a time before VDD reaches the

peak value.

Features

Typical input and output waveforms

Energy dissipation in the inverter during charging

When the P-channel MOSFET is on, and as VDD

increases from 0 to Vo, the load capacitor is charged

through the diode in the charging path.

The voltage reaches a peak value Vo in a time period T and

its value VDD(t) at any time ‘t’ is

when 0 ≤t ≤T

when T ≤t ≤2T

The voltage VDD (t) reaches a value VB in a period Tth, when

the diode starts conducting. Let Rch be the total resistance in

the charging path. The voltage VC across the load capacitor

‘C’ for

t> Tth, is

Assuming that Tth > CRch, Energy Ech dissipated over the

period

0 – T in the diode and the transistor is

]TT)(t

[1V(t)V

tTV

(t)V

ODD

ODD

CC

chBO

Vdt

dVCRVt

TV

)VV

)(1VTV

CC(RVEO

BB

OchOch

Energy dissipation in the inverter during discharging

When the N-channel MOSFET is on, the P-channel MOSFET

is off, charging of the capacitor is prevented at the load and the

capacitor discharges through the diode in the discharge path till t1,

that is, till VC is higher than the supply by at least VB, during the

period when VDD increases from 0 to Vo. The capacitor then stops

discharging at t1 and again continues discharging from 2T–t1 until

VC = VB. Let Rdis be the total resistance in the discharging path.

Assuming CRdis < t1, the energy Edc dissipated during discharging is

the sum of energy dissipated during 0 to t1 and (2T–t1 ) to 2T which

can be shown to be

where

C2

B2BCVBCR

TV

2C-)RC2TV(2tE Bdis

Odis

2O

2

1dc

TV

CRVVBO

disBCO

The total energy ED, dissipated during one cycle of charging

and discharging is given by

C2BBCVBCR

TV

2C)RCTV(2t)

VV

)(1VTV

CC(RVEEE2

BdisO

dis2

2

2O

1O

BB

OchOdcchD

Where t1 is given by

}

TC

RV

)TC

R(VVVCln{Rt

disO

disOBCO

dis1

Equation (1)

From equation (1)the energy dissipated decreases as T

increases. T indicates the rate at which the supply voltage

varies and, hence, the energy dissipated decreases with

slowly varying the supply voltages. The power dissipation

generally changes with parameters like VO, the value of the

capacitance, the equivalent series resistance because of

the diode and the MOSFET.

Simulation of the inverter

Simulated using Virtuoso Spectre circuit simulator of

Cadence EDA tools.

Models used for the simulation are BSIM3V3 model

parameters.

Length of the transistor=180nm, width of the transistor =

720nm.

Load capacitance=30fF.

Supply waveform is triangular with frequency=25MHz and

peak supply voltage=1.8V.

Input signal is square wave with frequency=25MHz.

The input logic ‘0’ value is 0.45 V and input logic ‘1’ value is

1.4 V.

The output logic values have been found to be 0.45

and 1.4 V corresponding to logic ‘0’ and logic ‘1’,

Name of the circuit

Energy dissipated

Simulation results

Theoretical values

Adiabatic inverter

4.04×10-14 4.38×10-14

CMOS inverter 9.12×10-14 9.72×10-14

Comparison of theoretical and simulated values of energy

dissipation for adiabatic inverter with CMOS inverter for

input data ‘01’ at 25–MHZ

From the table, for both the cases, it is clear that in

adiabatic inverter, the energy dissipation is only about

50% of that in the CMOS inverter.

* The threshold voltage is 0.6 V for the N-channel MOSFET

and -0.5 V for the P-channel MOSFET.

* The peak value of voltage between gate and source (VGS) of

the P-channel MOSFET is

VGS =0.45 -1.8= -1.35V

* When the input is logic ‘1’, the output does not go

through charging of the capacitor. This feature enables this

circuit to be used to drive the circuits, which follow without

malfunctioning. These aspects have been verified by

connecting two, three and four inverters in tandem.

* A single power supply for all the inverters is used.

Cascadability

Effect of variation of frequency

* The simulation is carried out by varying the input

frequency

and supply frequency simultaneously (keeping the input

and

supply frequencies equal) from 2.5 to 250 MHZ with all

other circuit parameters remaining the same.

The energy dissipated decreases marginally with increase in frequency.

The output logic levels up to frequencies of 25 MHz are 1.4

V

corresponding to logic ‘1’ and 0.45 V corresponding to logic

‘0’.

At frequencies higher than 25 MHz, the energy dissipated

decreases gradually and the logic values vary from 1.4 to

1.35 V for logic ‘1’ and 0.45 to 0.47 V for logic ‘0’ at 250

MHz

At frequencies of 2.50 GHz, the logic ‘1’ tends to a value

of 0.8 V and logic ‘0’ of –0.6 V. This is because the time

period of the supply waveform is small compared with the

time constant of charging and discharging, and the

capacitor is unable to charge and discharge to the required

levels.

The frequency of operation is increased by increasing the

width of the transistors, which results in a decrease of the

charging and discharging time constants but large W/L ratio

results in higher power dissipation in both the CMOS and

GFCAL circuits.

Energy dissipation during one cycle of charging and discharging,

rise and fall times in GFCAL inverter at different values of supply

frequency with constant input frequency of 5MHz

Supply frequency(MHz)

Energy dissipation

Rise time (ns)

Fall time (ns)

Sum of rise time and fall times(ns)

5 3.417×10-

14

46 4 50

10 3.44×10-14 24 3 27

25 4.047×10-

14

9 7 16

50 4.30×10-14 6 3 9

100 5.24×10-14 5 3 8

250 6.17×10-14 4 2 6From these results it is observed that the rise and fall times

are reduced at higher values of the supply frequency but

with a marginal increase of energy dissipation.

Energy dissipated during 12 cycles of charging and

discharging when the supply voltage is a sine, clamped to a

zero reference level and a trapezium waveform of 25MHz

with the same circuit parameters. The input and the supply

frequencies are synchronised.

Supply waveform

Energy dissipation, J

Output voltage levels, V

Logic “1” Logic“0”

Triangular 4.85×10-13 1.40 0.45

Trapezium 5.00×10-13 1.5 0.45

Sine 5.34×10-13 1.44 0.40

Energy dissipated by a trapezium waveform is more than

the triangular waveform. It is because the capacitor is

allowed to charge to a higher value of voltage corresponding

to logic ‘1’ since the duration of the peak value of supply

voltage is longer compared with that of the triangular wave

form.

In the case of the sine wave, the energy dissipation is

more than that in the above cases because of the fast

voltage rise near the zero crossing. Therefore triangular

waveform is more suitable for less energy dissipation.

The circuit consists of two P

channel MOSFETS (T5, T6) in parallel

and a diode (D3) in series. The

second branch consists of two N-

channel MOSFETS (T7, T8) in series

with a diode (D4).The two parallel

branches are connected in series

with the load capacitance C

GFCAL NAND GATE

The supply voltage for the

proposed gates is VDD, which is a

slowly varying triangular voltage

GFCAL NOR GATEThis circuit consists of two

branches in parallel. The first

branch consists of two P-channel

MOSFETS (T1, T2) and a diode (D1) in

series. The second branch consists

of two N-channel MOSFETS (T3, T4)

in parallel, connected in series with

a diode (D2). The two parallel

branches are connected in series

with the load capacitance CThe circuits of CMOS NAND and NOR gates are

simulated with identical transistors and load capacitance.

The supply voltage for these circuits is 1.8 V.

Comparison of simulated values of energy dissipation for the

GFCAL NOR and NAND gates corresponding to input strings

A =101010101010101010101010 and

B = ‘101010101010101010101010’ for one cycle of

charging and discharging at 25MHz.

Name of the circuit

Energy dissipated, J

Proposed GFCAL CMOS

NAND gate 4.88×10-14 1.15×10-13

NOR gate 4.94×10-14 1.180×10-13

From the table, for both the cases, it is clear that in

adiabatic gates, the energy dissipation is only about 50%

of that in the CMOS gates.

GFCAL adder circuits

GFCAL half adder

It consists of one XOR gate and one AND gate. The XOR

gate is realised using two NOR gates and one AND gate. The

AND gate is realised by connecting the output of a NAND

gate as input to the inverter. The OR gate is realised by

connecting the output of a NOR gate as input to the

inverter.

The load capacitance for the gate in the last stage, which

has to drive the next stage, is 30 fF and for all the other

gates, the value of the load capacitance is 10 fF (including

the input capacitance of the next stage). The supply for all

the circuits is a triangular waveform

GFCAL XOR gate circuit

If the inputs are A = 01010101 and B = ‘00110011’. The

outputs namely the SUM and CARRY are obtained as

strings ‘01100110’ and ‘00010001’, respectively. Using the

half adder as the block, a full adder is designed which

consists of two half adders and an OR gate.

GFCAL Full Adder

SUM and CARRY output waveforms for the input

strings of

A = ‘101010’ and B = ‘101010’ and input carry =

‘101010’

are shown.

GFCAL 4 bit Ripple Carry Adder

It consists of four full adders and the carry output is

given as the carry input to the following adder.

The functionality of the circuit is guaranteed by

maintaining the supply frequency higher than the

frequency of the input data.

Energy dissipation for the proposed GFCAL adder circuits

and CMOS circuits at input frequency of 25 MHZ and

supply frequency of 250MHz

Name of the circuit

Energy dissipation, J

Logic “1”

Logic “0”

GFCAL half adder 2.82×10-13 1.4 0.45

GFCAL full adder 7.35×10-13 1.4 0.45

GFCAL 4 bit adder

3.32×10-12 1.4 0.45

CMOS half adder 6.21×10-13 1.78 0

CMOS full adder 1.67×10-12 1.78 0

CMOS 4 bit adder 6.68×10-12 1.78 0

From the table, the energy dissipation in the GFCAL adder

circuits is about 50% of that of a CMOS adder circuits. The

logic “0” in GFCAL can be reduced further by using a

Schottkey diode

GFCAL JK Flip-flop

The JK flip-flop circuit consists of four GFCAL NAND gates.

The inputs are J and K along with the clock signal and Q

and are the outputs where is the complement of Q.

The supply voltage is VDD, which is a slowly varying

triangular voltage

Q

Q

Simulation results of GFCAL JK flip-flop

When the clock is enabled, the output changes according

to the inputs, that is, outputs Q = ‘1’ and = ‘0’ when J =

‘1’ and K = ‘0’.

Similarly, Q = ‘0’ and =‘1’ when J = ‘0’ and K = ‘1’.

Further, the outputs Q and are latched to their

corresponding values when the clock input is disabled.

Q

Q

Q

Energy dissipation for the proposed GFCAL JK Flip-flop

and CMOS circuits at input frequency of 25 MHZ and

supply frequency of 250MHz

Name of the circuit

Energy dissipation, J

Logic “1”

Logic “0”

GFCAL JK Flip-flop

1.28×10-13 1.4 0.45

CMOS JK Flip-flop

2.87×10-13 1.78 0

From the table, the energy dissipation in the GFCAL JK

Flip-flop is about 50% of that of a CMOS JK Flip flop

circuits.

Comparison of proposed GFCAL family with other adiabatic logic families

Given the length and width of a transistor are 180 nm and

720 nm, respectively, and the value of load capacitance is

30 fF. The input frequency is same as the supply frequency

(25 MHZ).

A 2N-2N2D inverter uses four transistors and two-diodes.

The capacitor has to be charged first before evaluating the

outputs, which may cause unwanted switching activities at

the output nodes.

A 2N-2P inverter uses four-transistors and a 2N-2N2P

inverter uses six-transistors. A PAL inverter uses four-

transistors but requires two complementary sinusoidal

power clocks in cascaded circuits.

* A CAL inverter contains eight-transistors and needs a single clock

and two additional timing control clocks for correct operation.

* A True single phase energy recovery logic (TSEL) inverter

contains six-transistors and needs a single clock, but it has

discharge /charge and evaluation phases, which may cause

unnecessary switching activities at nodes in hierarchical

circuits.

* A Quasi-static energy recovery logic (QSERL) inverter

contains four transistors and needs a single clock, but a

threshold voltage drop at MOSFETS used as diodes will

occur and also the capacitance effect exists at higher

frequencies.

* An ADL inverter contains one-transistor and one diode

along with a load capacitor and needs a four-phase clock in

cascaded circuits. Since the capacitor has to be pre-

charged, unwanted switching activity may occur at the

output nodes.

Type of inverter Energy dissipation, J

CMOS 9.12×10-14

GFCAL 4.04×10-14

ADL 3.41×10-14

2N-2N2D 6.64×10-14

QSERL 5.11×10-14

2N-2P 5.21×10-14

2N-2N2P 5.26×10-14

CAL 5.19×10-14

The energy dissipated by different inverters at an input

frequency of 25 MHz and a supply frequency of 25 MHz

during one cycle of charging and discharging of the load

capacitor

Type of inverter Energy dissipated, J

CMOS 9.15×10-14

GFCAL 3.84×10-14

ADL 3.64×10-14

2N-2ND 6.51×10-14

The energy dissipated by different inverters at an input

frequency of 125 MHz and a supply frequency of 125 MHz

during one cycle of charging and discharging of the load

capacitor

CONCLUSIONS

1. In Cascadable adiabatic circuits the energy saved is more

than 50% compared with that of conventional CMOS

circuits.

2.This circuit can be used in building hierarchical circuits as

the input and output logic levels are the same, just like in

the case of conventional digital circuits, and there are no

glitches.

3.All the circuits can be operated with a single power supply

and there is no need of a complementary input. It has been

shown that GFCAL circuits can work well up to 250 MHZ

using 0.18 μm with a reasonable W/L ratio of the transistors.

4. The number of transistors in CMOS and adiabatic circuit

are the same, except that one diode per branch is extra in

adiabatic circuit. Thus, the circuits can be easily cascaded.

5. Power saving in these circuits is because of

(i) The supply voltage is a slowly varying voltage, which

results in energy saving during charging and discharging.

(ii) The energy stored in the load capacitor is pumped back

into the supply to realise a transition from logic ‘1’ to logic

‘0’.

(iii) There is no short circuit current from the supply to the

ground at any time during the transition of logic ‘1’ to logic

‘0’ or logic ‘0’ to logic ‘1’ unlike in the CMOS circuits.

(iv) The diode in the discharge path of the gate prevents the

flow of current spikes from the input data into the load

capacitor.

REFERENCES

1. Cascadable adiabatic logic circuits for low-power

applications

N.S.S. Reddy, M. Satyam, K.L. Kishore, IET Circuits,

Devices and Systems November 2008, Volume 2, No.6,

Pages 518-526.

2. Adiabatic Logic by Benjamin Gojman, August 8, 2004

http://www.cs.caltech.edu/cbsss/finalreport/nanoscale_ind_g

ojman.pdf

3. ‘Second-order adiabatic computation with 2N-2P and 2N-

2N-2P logic circuits’ by Kramer A, Denker J.S., Flower B,

Moroney J, Proc. Intern. Symposium on Low Power Design,

1995, pp.191–196