A Novel Design Theory Using Coupling Coefficient for the ZVS … · 2013. 10. 11. · the...
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␠࿅ᴺ 㔚ሶᖱႎㅢାቇળ ାቇᛛႎ THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION AND COMMUNICATION ENGINEERS WPT2012- (2012-) 㨇․⻠Ṷ㨉 㜞ᵄࡢࡄ࠾ࡠ࠻ ࠆࠃߦZVS㡆ࡢࡗ⛎㔚⚿ߩวଥᢙ↪ࠍ⸘⸳ߚℂ⺰ ⚦⼱ ㆐ 㧔ᩣ㧕↰ᚲ ޥ617-8555 ੩ㇺᐭ㐳ጟ੩Ꮢ᧲⿷1-10-1 E-mail: [email protected] ߒ߹ࠄᣂߒቇ㓙ᛛⴚಽ㊁ߡߒߣ㜞ᵄࡢࡄ࠾ࡠ࠻ࠍឭ໒ࠆߔ㧚ᦸᛛⴚࡢߡߒߣࡗ⛎㔚ߦᦼᓙ ߔࠆ㧚ឭࠆߔZVS㡆ࡢࡗ⛎㔚ߦࡓ࠹㑐ߡߒ㧘⚿วଥᢙ↪ࠍߚᣂߒ⸳⸘ℂ⺰ߟߦࠆߓ⺰ߡ㧚2ߩߟᝄ ߟߦ࡞ߡ㧘વㅍ〒㔌㧘⟎㧘ኻะᐲ߇ࠇߙࠇߘߩᄌൻߚߒ႐วߔ␜ࠍ⸘⸳ߩ㧚⸃ᨆߪߢ㧘ឭࠆߔⶄᝄ࿁〝⸃ᨆ㧔MRA㧕 ↪ࠍߡ㑆㗔ߣᵄᢙ㗔ߩᣇ߅ߦߡ⸃ᨆࠆߔ㧚ᵄᢙ㗔⸃ᨆߪߢ㧘⺞ᵄ㡆⸃ᨆ㧔HRA㧕㧘Fࡄࡔ࠲㡆⸃ᨆ 㧔FRA㧕ࠅࠃߦ․ࡓ࠹ᕈࠍࠆߔߦ߆ࠄ㧚⸃ᨆ⸳⸘ߦၮߠߚ10MHz⚖േታ㛎ߪߢ㧘࡞ߥ࡞ࡊࡦࡊߣ࡞GaN FET ↪ࠍ㧘ࠅࠃߦ㧘વㅍ㔚ജ74.9W㧘ࡓ࠹㔚ജല₸74.0%߇㆐ᚑࠍߣߎࠆ߈ߢታ⸽ࠆߔ㧚 ࡢ ࠼ࡠ㔚ࡦ࠴࠶㧘㔚⏛⇇㡆㧘ⶄᝄ࿁〝㧘MRA㧘HRA㧘FRA㧘㒢ⷐ⚛ᴺ A Novel Design Theory Using Coupling Coefficient for the ZVS Resonant Wireless Power Transfer with High-Frequency Power Electronics Tatsuya HOSOTANI Murata Manufacturing Co., Ltd. Nagaokakyo-shi, Kyoto, 617-8555 Japan E-mail: [email protected] Abstract We advocate high-frequency power electronics as a new interdisciplinary technical field. We expect wireless power transfer technology. We present a novel design theory using coupling coefficient for the ZVS resonant wireless power transfer. We study the system design when for two coils a distance, a position, and an angle change. We analyze the system characteristics from the both sides of a time domain and a frequency domain by use of a multi-resonance analysis (MRA), a harmonic resonance analysis (HRA), and a F-parameter resonance analysis (FRA). In the 10MHz-class operation experiment, we use two simple loop coils and GaN FETs. We’ve achieved 74.9W of the transmission power, and 74.0% of the total power efficiency. We prove our proposed switching system is high efficiency system. Keyword Zero voltage switching, Electromagnetic field resonance, Multi-resonant circuit, MRA, HRA, FRA, Finite element method 1. ߓߪ ߦㄭᐕ㧘㡆ࡢࡗ⛎㔚ߩ㐿⊒ߪടㅦߡߒ ࠆ[1]-[7] 㧚 2007ᐕߦMIT㧔Massachusetts Institute of Technology㧕⎇ߩⓥ⠪ ࠅࠃႎ๔ߚࠇߐᵄᢙ10MHz㧘〒㔌2mߩታ㛎ߪߢ㧘વㅍല₸ ߪ40~50%߇ߛ㔚ജല₸ߪ15%ߣૐ [6] 㧚৻ᣇ㧘╩⠪ߪࠄ1994 ᐕ ߦ10MHz ⚖ ࡠ㔚 ࡦ࠴࠶㧔 ZVS 㧘 zero voltage switching㧕㔚ᵹⶄᝄࡃࡦࠍ࠲㐿⊒ ߒ[8],[9] 㧘ⓨᔃ࠻ࡦ ↪ࠍߚ10MHz⚖ታ㛎ߡߦ㔚ജല₸77.7%ࠍ㆐ᚑߡߒ ࠆ[10] 㧚 MITߩߢታ㛎ߪ㧘2ߩߟ߇࡞ⓨ㑆⏛ߢ᳇⚿วߒ㧘10MHz ߩ⚖ᝄ㔚ᵹࠅࠃߦ㔚ജࠍવㅍߪߢࠈߎߣࠆߔ㧘ᚒߩޘታ㛎 ߦ㉃߇ࠆߔ㧘࠷࠶ࡇ࡞⊒ᝄⵝ⟎↪ࠍߡ㜞ᵄ㔚ᵹࠍଏ ࠅ߅ߡߒ⛎㔚ജല₸ߪᄢߊ߈ૐ㧚╩⠪ߪࠄ㧘⇇ߦవ㚟 ߌߡ㡆ᣇᑼߩࡦ࠴࠶ࡢࡗ⛎㔚ࠍ㐿⊒ߒ㧘ታ↪ൻ ߦะߚߌ㐿⊒ࠍផㅴߡߒࠆ㧚․↪ߥㅜߪߡߒߦ㧘 ࠆߌ߅ߦࡓ࠹㔚ജല₸ߩะߪᔅⷐਇนߢࠆ㧚 ᣣ㧘᳃↢ᯏࠍᆎߚߒߣࠆࠁࠄ㔚᳇ᯏߦ ࠴࠶ࡦ㔚Ḯⵝ⟎↪߇ߡࠇࠄࠆ㧚╩⠪ߪࠄ㧘ⓨ㑆ࠍߡߒ㔚 ജࠍଏ⛎ࡢࠆߔࡗ⛎㔚߅ߦߡ߽ࡦ࠴࠶ᛛⴚ ࠍ↪ߣߎࠆ㧘ࡢࡄ࠾ࡠ࠻ࠍᔕ↪ࠍߣߎࠆߔផㅴ ࠆߔ㧚ࡢࡗ⛎㔚ߪߢ㧘વㅍ〝⏛ߦ᳇ㇱຠ↪ࠍ ߣߎࠆ߇࿎㔍ߥ႐ว߿㔚ജવㅍࡃ࠺ߦዊൻ߇ࠆࠇࠄ႐ว ߇ᄙߊ㧘MHzએߩ㜞ᵄേ߇ᦼᓙࠆࠇߐ㧚ߩࠄࠇߎᵄ ᢙᏪߪ㧘㕒⏛⇇㧘㕒㔚⇇ࠍᛒࡢࡄ߁࠾ࡠ࠻ ߣ㔚⏛ᵄ↪ࠍࠆㅢାᛛⴚ⁜ߩ㑆ߦߣࠆ߽⟎ઃࠇࠄߌ㧘ᣂ ߒޟ㜞ᵄࡢࡄ࠾ࡠ࠻ߣޠ߽⸒߈ߴ߁ቇ㓙ᛛ ⴚߡߒߣᛒࠆ߈ߢ߇ߣߎ߁㧚 ᧄⓂߪߢ㧘ᣂߒଔ୯ഃㅧࠍ⋡ᜰߚߒᣂߒቇ㓙ᛛⴚಽ㊁ ߡߒߣ㧘 ޟ㜞ᵄࡢࡄ࠾ࡠ࠻ࠍޠឭ໒ࠆߔ㧚ᦸ ᛛⴚࡢߡߒߣࡗ⛎㔚ߦᦼᓙࠆߔ㧚㜞ല₸ߥ ߩࡓ࠹ታ↪ൻࠍ⋡⊛ߡߒߣ㧘㡆ᣇᑼߩࡦ࠴࠶ࡢࡗ⛎ 㔚ࠍឭߒ㧘⚿วଥᢙ↪ࠍߚᣂߒ⸳⸘ℂ⺰ߟߦ ߓ⺰ߡࠆ㧚2ߩߟᝄߟߦ࡞ߡ㧘વㅍ〒㔌㧘⟎㧘ᐲ ࠇߘߩ߇ࠇߙᄌൻߚߒ႐วߩ․ࡓ࠹ᕈࠍ⸃ᨆࠆߔ㧚ឭࠆߔⶄ ᝄ࿁〝⸃ᨆ㧔MRA㧘Multi-Resonance Analysis㧕㧘⺞ᵄ㡆⸃ ᨆ㧔HRA㧘 Harmonic Resonance Analysis㧕㧘 Fࡄࡔ࠲㡆⸃ ᨆ㧔FRA㧘F-parameter Resonance Analysis㧕↪ࠍ ߡ[1]-[5] 㧘 㑆㗔ߣᵄᢙ㗔ߩᣇ߅ߦߡ⸃ᨆࠆߔ㧚ታ㛎ߪߢ㧘 ࡞ߥ࡞ࡊࡦࡊߣ࡞GaN FET↪ࠍߚ10MHz⚖േ ࠃߦࠅ㧘㜞ല₸ߥ㔚ജવㅍ߇น⢻ࠍߣߎߥታ⸽ࠆߔ㧚 17
Transcript of A Novel Design Theory Using Coupling Coefficient for the ZVS … · 2013. 10. 11. · the...
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THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION AND COMMUNICATION ENGINEERS WPT2012- (2012- )
ZVS
617-8555 1-10-1 E-mail: [email protected]
ZVS 2
MRAHRA F
FRA 10MHz GaN FET74.9W 74.0%
MRA HRA FRA
A Novel Design Theory Using Coupling Coefficient for the ZVS Resonant Wireless Power Transfer with High-Frequency Power Electronics
Tatsuya HOSOTANI
Murata Manufacturing Co., Ltd. Nagaokakyo-shi, Kyoto, 617-8555 Japan E-mail: [email protected]
Abstract We advocate high-frequency power electronics as a new interdisciplinary technical field. We expect wireless power transfer technology. We present a novel design theory using coupling coefficient for the ZVS resonant wireless power transfer. We study the system design when for two coils a distance, a position, and an angle change. We analyze the system characteristics from the both sides of a time domain and a frequency domain by use of a multi-resonance analysis (MRA), a harmonic resonance analysis (HRA), and a F-parameter resonance analysis (FRA). In the 10MHz-class operation experiment, we use two simple loop coils and GaN FETs. We’ve achieved 74.9W of the transmission power, and 74.0% of the total power efficiency. We prove our proposed switching system is high efficiency system.
Keyword Zero voltage switching, Electromagnetic field resonance, Multi-resonant circuit, MRA, HRA, FRA, Finite element method
1. [1]-[7]
2007 MIT Massachusetts Institute of Technology10MHz 2m
40~50% 15% [6] 199410MHz ZVS zero voltage
switching [8],[9]
10MHz 77.7% [10]
MIT 2 10MHz
MHz
2
MRA Multi-Resonance AnalysisHRA Harmonic Resonance Analysis FFRA F-parameter Resonance Analysis [1]-[5]
GaN FET 10MHz
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Administrator This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere.
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2. 2.1
1
3
1973 Dr. Newell
2.2 ZVS
ZVS Optimum zero voltage switching
[7],[8] 2.3
10MHz GHz
10kHz MHz
10MHz 1% 10010000 100GHz
3. 3.1
MIT50
2(a) 2(b)50
50 50%50
0 0 MHz
ZVS 3.2 ZVS
ZVS3
np ns
np nsLp Ls Lr Lrs
Lmp Lms Cr CrsLC Lr Cr
LC Lrs CrsQ1 Q2 Q3 Q4 FET
Q3 Q4
4. 4.1
4 FET Q1 Q2vgs1 vgs2 vds1 vds2
Cr ir FET Q3 Q4id3 id4 FET Q1 Q2 td
Viir
FET Q3 Q4
Fig. 1 High-frequency power electronics.
Fig. 2 A novel switching wireless power transfer system.
Fig. 3 Multi-resonant ZVS wireless power transfer system using electromagnetic field resonant coupling coils.
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vo id3 id4FET
tdZVS
td ZVS D D= ton/Ts 0
j ttjt coscoshcosh /sin/sinh tt (13)
(b) Qe=0.5 e=
0 tt /sinh (14) (c) Qe
(a)(c)
5. 5.1 Femtet®
np nsLp Cp
Fig. 4 Switching waveforms.
Table 1 Equivalent input voltage vie and output voltage voe no state vie vio Q1 Q2 Q3 Q41 on-period 1 Vi vo on off on off2 on-period 2 Vi 0 on off off on3 off-period 1 0 0 off on off on4 off-period 2 0 vo off on off on5 deadtime 1 vied vo off off on off6 deadtime 2 vied 0 off off off on
Fig. 5 Equivalent circuit with coupling coefficient k.
19
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np ns np=ns=5r=10cm h=5cm =2mm
Femtet®
dx=10cm6(a)(b)
Lp=7.55 HCp=3.54pF Ri 678m (6)
fr )MHz(8.30)2/(1 ppr CLf (15)
dxk 7(a) 7(b)
dx kLr Lp
5.2 np ns
ANSYS HFSS 830MHz fr(15) fr(12) (13) Ri
10MHzCpa=30pF9 fr
)MHz(0.10))(2/(1 pappr CCLf (16)
8 9
5.3 MRA/HRA/FRA [1]-[5]
(MRA) (HRA) F (FRA)(MRA) 4
2 Multi-resonant circuit
Cr10
HRA 2 FET
visqf (t)
1
)sin())cos(1(212
)(n
sii
isqf tnnnVV
tv (17)
]))cos(1(2/)}cos(1[{cos 1 nn , ss T/2 (18)
0viac(t)
Ro Racviac(t) Rac
)sin()/2()( tVtv siiac 2/2 oac RR (19) FRA LC
F 1-1’F j s
12
101
101
101
10
11
mp
ir
prp
sL
RsLsCsC
F (20)
1101
10
11101
101
12
101
acrs
s
isrs
mss
RsCsC
RsL
sLF (21)
spall FFF (22) F Zall
(= vo/Vi) Mall
2111 / FFZall 11/1 FM all (23)
Zall Im0
(23)
6. 6.1
Femtet®
Lp=7.55 H Cp=3.54pF Ri=678m Cr=30pFVi=50V fs=10MHz
(a) Magnetic field analysis (b) Electric field analysis Fig.6 Electromagnetic field analysis near two resonant coils.
0.0001
0.001
0.01
0.1
1
0 20 40 60 80 100
Cou
plin
g coe
ffici
ent
Distance [cm] (a) Coupling coefficient k (b) Analytical model
Fig.7 Coupling coefficient k for two resonant coils.
0 [A/m]
50
0 [V/m]
25Fig. 8 Impedance characteristics of a resonant coil.
0 5 10 15 20 25 30Frequency [MHz]
0
5.0E3
1.0E4
1.5E4
Res
ista
nce
[
0 5 10 15 20 25 30Frequency [MHz]
0
4.0E4
8.0E4
-4.0E4
Rea
ctan
ce [
Fig. 9 Impedance characteristics of a resonant coil with 30pF.
Fig. 10 Multi-resonant circuit.
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Ro=50 dx 10 cm(23) Zall
Rre Im11(a) (b) Rre
fr dxdx=0.2m Im 0
3 Im=0fr1 fr fr2
Zall Mall12(a) (b) Zall Mall
Mall dx=0.4mvo Po
12(b) AC viac ACvoac Mall Vi=50VDC vo 13(a)
SCAT ver. K.492
DC-DC13(b)
FET 100m Cds=100pF0.7V 13(a) (b)
DC-DC AC-AC
SCAT14(a) HFSS 10MHzk 14(b) SCAT
70%MIT 15%
7(a) 14(b) 10MHz
6.2 k
2kRo=50
dx=20cm 0 20cm0 180deg HFSS (a)
fr1 (b) fr2(1) dx=20cm (2) dx=20cm 10cm (3)
dx=20cm 45deg. 15(1)(2)(3)fr1 fr2 2
fr1fr2
dx=20cm HFSS
9.5 9.75 10 10.25 10.5120
60
0
60
120dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
9.5 9.75 10 10.25 10.51
10
100
1000dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
(a) Resistance Rre (b) Reactance Im Fig.11 Resistance and reactance characteristics.
9.5 9.75 10 10.25 10.51
10
100
1000dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
9.5 9.75 10 10.25 10.50
0.6
1.2
1.8dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
(a) Input impedance Zall (b) Voltage gain Mall Fig.12 Input impedance and voltage gain characteristics.
0
20
40
60
80
100
9.5 9.75 10 10.25 10.5
Out
put
volta
ge [
V]
Frequency [MHz]
dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
9.5 9.75 10 10.25 10.50
20
40
60
80
100dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
Frequency [MHz]
Out
put V
olta
ge [V
]
Frequency [MHz]
(a) Proposed design theory (b) Switching simulation Fig.13 Output voltage by a proposed theory and a simulator.
0.0001
0.001
0.01
0.1
10 20 30 40 50 60 70 80 90 100
Cou
plin
g coe
ffici
ent
Distance [cm]
0
20
40
60
80
9.5 9.75 10 10.25 10.5
Effic
ienc
y [%
]
Frequency [MHz]
dx= 10cmdx= 20cmdx= 30cmdx= 40cmdx= 50cm
(a) Whole power efficiency by SCAT (b) Coupling coefficient at 10MHzFig.14 Whole power efficiency and coupling coefficient.
(1) dx = 20cm (Shift = 0cm, Rotate = 0deg.)
(2) Shift = 10cm (dx = 20cm, Rotate = 0deg.)
(3) Rotate = 45deg. (Shift = 0cm, dx = 20cm) (a) Low resonant frequency fr1 (b) High resonant frequency fr2
Fig.15 Magnetic field analysis near two resonant coils.
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10MHz k16(1) k
16(2) 16(3)k
k90deg k 0
16(2) (3)
SCAT
17(a)(b) 70%16 17
7. GaN FET 10MHz k
GaN FET
GaN FET100V 20A 0.21
0.8V 6ns
5cm1mm 2
fs=8.2MHz Ro=5018
60V 61.2V 74.9W73.3% 50V 51.0V
52.0W 74.0%
8.
GaN FET 10MHz
74.0% 74.9W
[1] ZVS
PE2012-17,pp.9-14 2012 10 . [2] ZVS
MAG-12-103 2012. [3] ,“ ZVS
, , WPT2012-5, 2012 . [4] T.Hosotani, I. Awai, “A Novel Analysis of ZVS Wireless Power Transfer System
Using Coupled Resonators”, IEEE IMWS-IWPT Proc., pp.235-238, 2012. [5]
WPT2011-22 2011. [6] A.Kurs, A.Karalis, R.Moffatt, J.D.Joannopoulos, P.Fisher, and M.Soljacic,
Wireless Power Transfer via Strongly Coupled Magnetic Resonances, in Science Express on 7 June, vol.317, no.5834, pp.83-86, 2007.
[7] , , , ,, The Institute of Electrical Engineers of Japan, vol.130, no.1,
pp.84-92, 2010.
[8] T.Hosotani, K.Harada, Y.Ishihara, T.Todaka, “A novel ZVS multi-resonant converter with rectifiers’ deadtime control operated in 20 MHz range”, IEEE INTELEC Proc., pp.115-122, 1994.
[9] , , , , “ 10MHz, , vol.117-A, no.2, pp.140-147, 1997.
[10] , , , , ,“10MHz DC-DC, , PE95-69, 1996.
0
0.02
0.04
0.06
0.08
0.1
0 5 10 15 20
Cou
plin
g coe
ffici
ent
Shift [cm]
dx= 10cmdx= 20cmdx= 30cmdx= 50cm
-0.04
-0.02
0
0.02
0.04
0 30 60 90 120 150 180
Cou
plin
g co
effic
ient
Rotate [deg]
(a) Displacement (b) Rotation (dx=20cm) (1) Coupling coefficient k characteristics
9.5 9.75 10 10.25 10.50
20
40
60
80Shift= 0cmShift= 10cmShift= 15cmShift= 20cm
Frequency [MHz]
Out
put V
olta
ge [V
]
9.5 9.75 10 10.25 10.50
10
20
30
40
500deg30deg60deg90deg
Frequency [MHz]
Out
put V
olta
ge [V
]
(a) Displacement (b) Rotation (2) Output voltage vo characteristics (dx=20cm)
9.5 9.75 10 10.25 10.50
20
40
60
80Shift= 0cmShift= 10cmShift= 15cmShift= 20cm
Frequency [MHz]
Out
put p
ower
[W]
9.5 9.75 10 10.25 10.50
10
20
30
40
500deg30deg60deg90deg
Frequency [MHz]
Out
put p
ower
[W]
(a) Displacement (b) Rotation (3) Output power Po characteristics (dx=20cm)
Fig.16 Power system characteristics by proposed theory.
0
20
40
60
80
9.5 9.75 10 10.25 10.5
Effic
ienc
y [%
]
Frequency [MHz]
0deg30deg60deg90deg
0
20
40
60
80
9.5 9.75 10 10.25 10.5
Effic
ienc
y [%
]
Frequency [MHz]
Shift= 0cmShift= 10cmShift= 15cmShift= 20cm
(a) Displacement (dx=20cm) (b) Rotation Fig.17 Whole power efficiency characteristics by SCAT.
0
20
40
60
80
20 30 40 50 60
Out
put p
ower
[W
]
Input voltage [V]
0
20
40
60
80
20 30 40 50 60
Effic
ienc
y [%
]
Input voltage [V]
(a) Output power vo (b) Whole power efficiency Fig.18 Experimental whole power efficiency at 8.2MHz.
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