7MBR25SA120-50-Fuji
description
Transcript of 7MBR25SA120-50-Fuji
7MBR25SA120 IGBT Modules
Applications· Inverter for motor drive· AC and DC servo drive amplifier· Uninterruptible power supply
Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating UnitCollector-Emitter voltageGate-Emitter voltage
Collector current
Collector power dissipationCollector-Emitter voltageGate-Emitter voltageCollector current
Collector power dissipationRepetitive peak reverse voltageRepetitive peak reverse voltageAverage output currentSurge current (Non-Repetitive)I2t (Non-Repetitive)Co
nver
ter
B
rake
In
verte
r
Operating junction temperatureStorage temperatureIsolation between terminal and copper base *2voltage between thermistor and others *3Mounting screw torque
VCES
VGES
IC
ICP
-ICPC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IOIFSM
I2 tTj
Tstg
Viso
Continuous Tc=25°C Tc=80°C1ms Tc=25°C Tc=80°C
1 device
Continuous Tc=25°C Tc=80°C1ms Tc=25°C Tc=80°C1 device
50Hz/60Hz sine waveTj=150°C, 10mshalf sine wave
AC : 1 minute
1200 ±20 35 25 70 50 25 180 1200 ±20 25 15 50 30 110 1200 1600 25 260 338 +150-40 to +125 AC 2500 AC 2500 3.5 *1
VVA
A
AWVVA
A
WVVAAA2s°C°CV
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)*2 All terminals should be connected together when isolation test will be done.*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT MODULE (S series)1200V / 25A / PIM
Features· Low VCE(sat)· Compact package· P.C. board mount· Converter diode bridge, Dynamic brake circuit
Electrical characteristics (Tj=25°C unless otherwise specified)Item Symbol Condition Characteristics Unit Min. Typ. Max.
Zero gate voltage collector currentGate-Emitter leakage currentGate-Emitter threshold voltageCollector-Emitter saturation voltage
Input capacitanceTurn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRDZero gate voltage collector currentGate-Emitter leakage currentCollector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse currentForward on voltage
Reverse currentResistance
B valueTher
mis
tor
Con
verte
r
Bra
ke
In
verte
r
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
trtr(i)toff
tfVF
trrICES
IGES
VCE(sat)
ton
trtoff
tfIRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0VVCE=0V, VGE=±20VVCE=20V, IC=25mAVGE=15V, Ic=25A chip terminalVGE=0V, VCE=10V, f=1MHzVCC=600VIC=25AVGE=±15VRG=51Ω
IF=25A chip terminalIF=25AVCES=1200V, VGE=0VVCE=0V, VGE=±20VIC=15A, VGE=15V chip terminalVCC=600VIC=15AVGE=±15VRG=82ΩVR=1200VIF=25A chip terminalVR=1600VT=25°CT=100°CT=25/50°C
1.00.28.5
2.6
1.20.6
1.00.3
3.20.351.00.2
2.61.20.61.00.31.0
1.51.0
3000
5.5 7.2
mAµAVV
pFµs
V
µsmAµAV
µs
mAV
mAΩ
K
Item Symbol Condition Characteristics Unit Min. Typ. Max.
Inverter IGBTInverter FWDBrake IGBTConverter DiodeWith thermal compound
0.69 1.30 1.14 °C/W 0.900.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Modules 7MBR25SA120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
2.12.2
0.350.250.10.450.082.32.4
2.12.20.350.250.450.08
1.11.2
5000 465 495 5203305 3375 3450
[Converter]21(P)
23(N)
1(R) 2(S) 3(T)
[B ra ke ] [In ver ter ]2 2 (P 1)
7 (B )
1 4 (G b)
2 4 (N 1)
2 0 (G u)
1 9 (E u )
1 3 (G x)
1 8 (G v)
1 7 (E v )
4 (U )
1 2 (G y)
5 (V ) 6 (W )
1 6 (G w )
1 1 (G z)1 0 (E n)
1 5 (E w )
8 9
[T h e rm is to r]
IGBT Modules 7MBR25SA120Characteristics (Representative)
0 1 2 3 4 50
10
20
30
40
50
60
8V
10V
12V15V
VGE= 20V
[ Inverter ]Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
Col
lect
or c
urre
nt :
Ic
[ A
]
Collector - Emitter voltage : VCE [ V ]
0 1 2 3 4 50
10
20
30
40
50
60
8V
10V
12V15V
VGE= 20V
[ Inverter ]Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Collector - Emitter voltage : VCE [ V ]C
olle
ctor
cur
rent
: I
c [
A ]
0 1 2 3 4 50
10
20
30
40
50
60
Tj= 25oC Tj= 125 oC
[ Inverter ]Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Col
lect
or c
urre
nt :
Ic
[ A
]
5 10 15 20 250
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
[ Inverter ]Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
Col
lect
or -
Emitt
er v
olta
ge :
VC
E [
V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35100
1000
10000
[ Inverter ]Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cap
acita
nce
: C
ies,
Coe
s, C
res
[ pF
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 150 200 2500
200
400
600
800
1000
[ Inverter ]Dynamic Gate charge (typ.)Vcc=600V, Ic=25A, Tj= 25 oC
Gate charge : Qg [ nC ]
Col
lect
or -
Emitt
er v
olta
ge :
VC
E [
V ]
0
5
10
15
20
25
Gat
e - E
mitt
er v
olta
ge :
VG
E [
V ]
IGBT Modules 7MBR25SA120
Vcc=600V, VGE=±15V, Rg=51Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=51Ω, Tj=125°C
Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=51Ω
Vcc=600V, Ic=25A, VGE=±15V, Tj=125°C +VGE=15V, -VGE<15V, Rg>51Ω, Tj<125°C= = =
0 10 20 30 4050
100
500
1000
ton
tr
toff
tf
[ Inverter ]Switching time vs. Collector current (typ.)
Switc
hing
tim
e :
ton,
tr, t
off,
tf [
nsec
]
Collector current : Ic [ A ]
0 10 20 30 4050
100
500
1000
tf
tr
ton
toff
[ Inverter ]Switching time vs. Collector current (typ.)
Collector current : Ic [ A ]Sw
itchi
ng ti
me
: to
n, tr
, tof
f, tf
[ ns
ec ]
10 50 100 50050
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]Switching time vs. Gate resistance (typ.)
Gate resistance : Rg [ Ω ]
Switc
hing
tim
e :
ton,
tr, t
off,
tf [
nsec
]
0 10 20 30 40 500
1
2
3
4
5
6
7
Err(25 oC)
Eoff(25 oC)
Eon(25 oC)
Err(125 oC)
Eoff(125 oC)
Eon(125 oC)
[ Inverter ]Switching loss vs. Collector current (typ.)
Switc
hing
loss
: E
on, E
off,
Err
[ mJ/
puls
e ]
Collector current : Ic [ A ]
10 50 100 5000
5
10
15
20
[ Inverter ]Switching loss vs. Gate resistance (typ.)
Switc
hing
loss
: E
on, E
off,
Err
[ mJ/
puls
e ]
Gate resistance : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 14000
10
20
30
40
50
60
[ Inverter ] Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Col
lect
or c
urre
nt :
Ic [
A ]
IGBT Modules 7MBR25SA120
0 1 2 3 40
10
20
30
40
50
60
Tj=25 oCTj=125 oC
[ Inverter ]Forward current vs. Forward on voltage (typ.)
Forw
ard
curre
nt :
IF
[ A
]
Forward on voltage : VF [ V ]
0 10 20 30 4010
100
300
Irr(125 oC)
Irr(25 oC)
trr(25 oC)
trr(125 oC)
[ Inverter ]Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=51 Ω
Forward current : IF [ A ]R
ever
se re
cove
ry c
urre
nt :
Irr
[ A
]R
ever
se re
cove
ry ti
me
: tr
r [ n
sec
]
0.0 0.4 0.8 1.2 1.6 2.00
10
20
30
40
50
60
Tj= 25 oC Tj= 125 oC
[ Converter ]Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forw
ard
curre
nt :
IF
[ A
]
0.001 0.01 0.1 10.01
0.1
1
5
IGBT[Brake]
Transient thermal resistance
Ther
mal
resi
stan
se :
Rth
(j-c)
[ o C
/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
Conv. Diode
IGBT[Inverter]
-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.1
1
10
100
200
[ Thermistor ]Temperature characteristic (typ.)
Temperature [ oC ]
Res
ista
nce
: R
[ k
Ω ]
IGBT Modules 7MBR25SA120
0 1 2 3 4 50
5
10
15
20
25
30
35
8V
10V
12V15V
VGE= 20V
[ Brake ]Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
Col
lect
or c
urre
nt :
Ic
[ A
]
Collector - Emitter voltage : VCE [ V ]
0 1 2 3 4 50
5
10
15
20
25
30
35
8V
10V
12V15VVGE= 20V
[ Brake ]Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Col
lect
or c
urre
nt :
Ic
[ A
]
0 1 2 3 4 50
5
10
15
20
25
30
35
Tj= 25 oC Tj= 125 oC
[ Brake ]Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Col
lect
or c
urre
nt :
Ic
[ A
]
5 10 15 20 250
2
4
6
8
10
Ic= 7.5A
Ic= 15A
Ic= 30A
[ Brake ]Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
Col
lect
or -
Emitt
er v
olta
ge :
VC
E [
V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 3550
100
1000
5000
[ Brake ]Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cap
acita
nce
: C
ies,
Coe
s, C
res
[ pF
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 1500
200
400
600
800
1000
[ Brake ]Dynamic Gate charge (typ.)Vcc=600V, Ic=15A, Tj= 25 oC
Gate charge : Qg [ nC ]
Col
lect
or -
Emitt
er v
olta
ge :
VC
E [
V ]
0
5
10
15
20
25
Gat
e - E
mitt
er v
olta
ge :
VG
E [
V ]
IGBT Modules 7MBR25SA120
Outline Drawings, mm