64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS ...DECEMBER 2012 A0-A15 CS1 OE WE 64K x 16 DECODER MEMORY...

Integrated Silicon Solution, Inc. — www.issi.com 1Rev. B12/18/12

IS62WV6416DALL/DBLLIS65WV6416DALL/DBLL

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES

• High-speedaccesstime:35ns,45ns,55ns

• CMOSlowpoweroperation:

15mW(typical)operating

1.5µW(typical)CMOSstandby

• TTLcompatibleinterfacelevels

• Singlepowersupply

1.65V--2.2VVdd (62WV6416dALL)

2.3V--3.6VVdd (65WV6416dBLL)

• Fullystaticoperation:noclockorrefresh required

• Threestateoutputs

• Datacontrolforupperandlowerbytes

• Industrialandautomotivetemperaturesupport

• 2CSOptionAvailable

• Lead-freeavailable

DESCRIPTION

TheISSIIS62/65WV6416DALLandIS62/65WV6416DBLLarehigh-speed,1MbitstaticRAMsorganizedas64Kwordsby16bits.ItisfabricatedusingISSI'shigh-performanceCMOStechnology.Thishighly reliableprocesscoupledwith innovative circuit design techniques, yields high-performanceandlowpowerconsumptiondevices.

WhenCS1 isHIGH(deselected)orwhenCS2 isLOW (deselected)orwhen CS1isLOW,CS2isHIGHandbothLBandUBareHIGH,thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownwithCMOSinputlevels.

EasymemoryexpansionisprovidedbyusingChipEnableandOutputEnableinputs.TheactiveLOWWriteEnable(WE)controlsbothwritingandreadingofthememory.AdatabyteallowsUpperByte(UB)andLowerByte(LB)access.

TheIS62/65WV6416DALLandIS62/65WV6416DBLLarepackagedintheJEDECstandard48-pinminiBGA(6mmx8mm)and44-PinTSOP(TYPEII).

FUNCTIONAL BLOCK DIAGRAM

DECEMBER 2012

A0-A15

CS1OEWE

64K x 16MEMORY ARRAYDECODER

COLUMN I/O

CONTROLCIRCUIT

GND

VDD

I/ODATA

CIRCUIT

I/O0-I/O7Lower Byte

I/O8-I/O15Upper Byte

UBLB

CS2

2 Integrated Silicon Solution, Inc. — www.issi.com Rev. B

12/18/12


PIN CONFIGURATIONS

48-Pin mini BGA (6mm x 8mm)(Package Code B)

PIN DESCRIPTIONSA0-A15 AddressInputs

I/O0-I/O15 DataInputs/Outputs

CS1,CS2 ChipEnableInput

OE OutputEnableInput

WE WriteEnableInput

LB Lower-byteControl(I/O0-I/O7)

UB Upper-byteControl(I/O8-I/O15)

NC NoConnection

Vdd Power

GND Ground

48-Pin mini BGA (6mm x 8mm)2 CS Option (Package Code B2)

44-Pin mini TSOP (Type II)(Package Code T)

1 2 3 4 5 6

A

B

C

D

E

F

G

H

LB OE A0 A1 A2 CS2

I/O8 UB A3 A4 CS1 I/O0

I/O9 I/O10 A5 A6 I/O1 I/O2

GND I/O11 NC A7 I/O3 VDD

VDD I/O12 NC NC I/O4 GND

I/O14 I/O13 A14 A15 I/O5 I/O6

I/O15 NC A12 A13 WE I/O7

NC A8 A9 A10 A11 NC

1 2 3 4 5 6

A

B

C

D

E

F

G

H

LB OE A0 A1 A2 NC

I/O8 UB A3 A4 CSI I/O0

I/O9 I/O10 A5 A6 I/O1 I/O2

GND I/O11 NC A7 I/O3 VDD

VDD I/O12 NC NC I/O4 GND

I/O14 I/O13 A14 A15 I/O5 I/O6

I/O15 NC A12 A13 WE I/O7

NC A8 A9 A10 A11 NC

12345678910111213141516171819202122

44434241403938373635343332313029282726252423

A4A3A2A1A0CS1I/O0I/O1I/O2I/O3VDD

GNDI/O4I/O5I/O6I/O7WEA15A14A13A12NC

A5A6A7OEUBLBI/O15I/O14I/O13I/O12GNDVDD

I/O11I/O10I/O9I/O8NCA8A9A10A11NC



ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter Value Unit Vterm TerminalVoltagewithRespecttoGND –0.5toVdd+0.5 V Vdd VddRelatestoGND –0.3to4.0 V tstg StorageTemperature –65to+150 °C Pt PowerDissipation 1.0 WNotes:1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto

thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.

CAPACITANCE(1,2)

Symbol Parameter Conditions Max. Unit

Cin InputCapacitance Vin = 0V 6 pF

Ci/O Input/OutputCapacitance VOut = 0V 8 pFNotes:1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.2. Testconditions:TA = 25°C, f=1MHz,Vdd=3.3V.

TRUTH TABLE

I/O PIN Mode WE CS1 CS2 OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current

NotSelected X H X X X X High-Z High-Z isB1, isB2

X X L X X X High-Z High-Z isB1, isB2

X X X X H H High-Z High-Z isB1, isB2

OutputDisabled H L H H L X High-Z High-Z iCC H L H H X L High-Z High-Z iCC

Read H L H L L H dOut High-Z iCC H L H L H L High-Z dOut H L H L L L dOut dOut

Write L L H X L H din High-Z iCC L L H X H L High-Z din L L H X L L din din


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AC TEST LOADS

Figure 1.

R1

5 pFIncluding

jig andscope

R2

OUTPUT

VTM

Figure 2.

AC TEST CONDITIONS Parameter Unit Unit Unit (2.3V-3.6V) (3.3V + 5%) (1.65V-2.2V)

InputPulseLevel 0.4VtoVdd-0.3V 0.4VtoVdd-0.3V 0.4VtoVdd-0.3V

InputRiseandFallTimes 1V/ns 1V/ns 1V/ns

InputandOutputTiming VDD/2 VDD+0.05 0.9V andReferenceLevel(VRef)2

OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2

R1( Ω ) 317 317 13500

R2( Ω ) 351 351 10800

Vtm(V) 3.3V 3.3V 1.8V

R1

30 pFIncluding

jig andscope

R2

OUTPUT

VTM



DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)

VDD = 2.3V-3.6V

Symbol Parameter Test Conditions Min. Max. Unit

VOH OutputHIGHVoltage Vdd = Min.,iOH = –1.0mA 1.8 — V

VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V

ViH InputHIGHVoltage 2.0 Vdd + 0.3 V

ViL InputLOWVoltage(1) –0.3 0.8 V

iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA

iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µANote:1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested. ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.


VDD = 3.3V + 5% Symbol Parameter Test Conditions Min. Max. Unit VOH OutputHIGHVoltage Vdd = Min.,iOH = –1mA 2.4 — V VOL OutputLOWVoltage Vdd = Min.,iOL = 2.1mA — 0.4 V ViH InputHIGHVoltage 2 Vdd + 0.3 V ViL InputLOWVoltage(1) –0.3 0.8 V iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µA

Note:1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested. ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.


VDD = 1.65V-2.2V

Symbol Parameter Test Conditions VDD Min. Max. Unit

VOH OutputHIGHVoltage iOH = -0.1mA 1.65-2.2V 1.4 — V

VOL OutputLOWVoltage iOL = 0.1mA 1.65-2.2V — 0.2 V

ViH InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V

ViL(1) InputLOWVoltage 1.65-2.2V –0.2 0.4 V

iLi InputLeakage GND≤ Vin ≤ Vdd –1 1 µA

iLO OutputLeakage GND≤ VOut ≤ Vdd, OutputsDisabled –1 1 µANote:1. ViL (min.)= –0.3VDC;ViL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested. ViH (max.)= Vdd + 0.3V dC;ViH (max.)= Vdd + 2.0V AC(pulsewidth<10ns).Not100%tested.


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POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)

-35 -45 -55 Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit

iCC VddDynamicOperating Vdd = Max., Com. — 8 — 6 — 5 mA SupplyCurrent iOut = 0 mA,f=fmAX Ind. — 12 — 8 — 7 CE = ViL Auto. — 15 — 12 — 12 Vin ≥ Vdd – 0.3V, or typ.(2) 5 Vin ≤ 0.4V

iCC1 Operating Vdd = Max., Com. — 2.5 — 2.5 — 2.5 mA SupplyCurrent iOut = 0 mA,f=0 Ind. — 2.5 — 2.5 — 2.5 CE = ViL Auto. — 5 — 5 — 5 Vin ≥ Vdd – 0.3V, or Vin ≤ 0.4V

isB2 CMOSStandby Vdd = Max., Com. — 2 — 2 — 2 µA Current(CMOSInputs) CS1 ≥ Vdd – 0.2V, Ind. — 4 — 4 — 4 CS2≤0.2V, Auto — 18 — 18 — 18 Vin ≥ Vdd – 0.2V, or typ.(2) 0.6 Vin ≤ 0.2V, f=0

OR

ULBControl Vdd=Max.,CS1=ViL, Cs2=ViH

Vin ≤0.2V,f=0;UB / LB=Vdd–0.2V

Note:1.Atf=fmAX,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.2.TypicalvaluesaremeasuredatVdd=3.0V,TA=25oCandnot100%tested.

OPERATING RANGE (VDD) Range Ambient Temperature VDD (45 nS) VDD (35 nS) Commercial 0°Cto+70°C 2.3V-3.6V 3.3V+5% Industrial –40°Cto+85°C 2.3V-3.6V 3.3V+5%

OPERATING RANGE (VDD) Range Ambient Temperature VDD Speed Commercial 0°Cto+70°C 1.65V-2.2V 45ns Industrial –40°Cto+85°C 1.65V-2.2V 55ns Automotive –40°Cto+125°C 1.65V-2.2V 55ns

OPERATING RANGE (VDD) Range Ambient Temperature VDD (45 nS) Automotive –40°Cto+125°C 2.3V-3.6V



READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)

35 ns 45 ns 55 ns Symbol Parameter Min. Max. Min. Max. Min. Max. Unit

trC ReadCycleTime 35 — 45 — 55 — ns

tAA AddressAccessTime — 35 — 45 — 55 ns

tOHA OutputHoldTime 10 — 10 — 10 — ns

tACs1/tACs2 CS1/CS2AccessTime — 35 — 45 — 55 ns

tdOe OEAccessTime — 10 — 20 — 25 ns

tHzOe(2) OEtoHigh-ZOutput 0 10 0 15 0 20 ns

tLzOe(2) OEtoLow-ZOutput 3 — 5 — 5 — ns

tHzCs1/tHzCs2(2) CS1/CS2toHigh-ZOutput 0 10 0 15 0 20 ns

tLzCs1/tLzCs2(2) CS1/CS2toLow-ZOutput 5 — 5 — 10 — ns

tBA LB,UBAccessTime — 35 — 45 — 55 ns

tHzB LB,UBtoHigh-ZOutput 0 15 0 15 0 20 ns

tLzB LB,UBtoLow-ZOutput 0 — 0 — 0 — ns

Notes: 1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4to

Vdd-0.2V/Vdd-0.3VandoutputloadingspecifiedinFigure1.2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.


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DATA VALIDPREVIOUS DATA VALID

tAA

tOHAtOHA

tRC

DOUT

ADDRESS

AC WAVEFORMS

READ CYCLE NO. 1(1,2) (AddressControlled)(CS1=OE=ViL, Cs2=WE=ViH, UB orLB = ViL)

tRC

tOHAtAA

tDOE

tLZOE

tACE1/tACE2

tLZCE1/tLZCE2

tHZOE

HIGH-ZDATA VALID

tHZCS1/tHZCS2

ADDRESS

OE

CS1

CS2

DOUT

LB, UB

tHZBtBAtLZB

AC WAVEFORMS

READ CYCLE NO. 2(1,3) (CS1, CS2, OE,ANDUB/LB Controlled)

Notes: 1. WEisHIGHforaReadCycle.2. Thedeviceiscontinuouslyselected.OE,CS1,UB,orLB=ViL. Cs2=WE=ViH.3. AddressisvalidpriortoorcoincidentwithCS1LOWtransition.



WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(OverOperatingRange)

35 ns 45 ns 55 ns Symbol Parameter Min. Max. Min. Max. Min. Max. Unit tWC WriteCycleTime 45 — 45 — 55 — ns

tsCs1/tsCs2 CS1/CS2toWriteEnd 35 — 35 — 45 — ns

tAW AddressSetupTimetoWriteEnd 35 — 35 — 45 — ns

tHA AddressHoldfromWriteEnd 0 — 0 — 0 — ns

tsA AddressSetupTime 0 — 0 — 0 — ns

tPWB LB,UBValidtoEndofWrite 35 — 35 — 45 — ns

tPWe WEPulseWidth 35 — 35 — 40 — ns

tsd DataSetuptoWriteEnd 20 — 20 — 25 — ns

tHd DataHoldfromWriteEnd 0 — 0 — 0 — ns

tHzWe(3) WELOWtoHigh-ZOutput — 20 — 20 — 20 ns

tLzWe(3) WEHIGHtoLow-ZOutput 5 — 5 — 5 — ns

Notes:

1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4VtoVdd-0.2V/Vdd-0.3VandoutputloadingspecifiedinFigure1.

2. TheinternalwritetimeisdefinedbytheoverlapofCS1LOW,CS2HIGHandUBorLB,andWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthewrite.

3. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

Notes: 1. WRITEisaninternallygeneratedsignalassertedduringanoverlapoftheLOWstatesontheCS1,CS2andWEinputsandat

leastoneoftheLBandUBinputsbeingintheLOWstate.2. WRITE=(CS1)[(LB)=(UB)](WE).

AC WAVEFORMSWRITE CYCLE NO. 1(1,2) (CS1Controlled,OE=HIGHorLOW)

DATA-IN VALID

DATA UNDEFINED

tWC

tSCS1

tSCS2

tAW

tHA

tPWE

tHZWE

HIGH-Z

tLZWEtSA

tSD tHD

ADDRESS

CS1

CS2

WE

DOUT

DIN

LB, UBtPWB


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WRITE CYCLE NO. 2 (WEControlled:OEisHIGHDuringWriteCycle)

WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)

DATA-IN VALID

DATA UNDEFINED

tWC

tSCS1

tSCS2

tAW

tHA

t PWE

tHZWE

HIGH-Z

tLZWEtSA

tSD tHD

ADDRESS

OE

CS1

CS2

WE

LB, UB

DOUT

DIN

DATA-IN VALID

DATA UNDEFINED

tWC

tSCS1

tSCS2

tAW

tHA

tPWE

tHZWE

HIGH-Z

tLZWEtSA

tSD tHD

ADDRESS

OE

CS1

CS2

WE

LB, UB

DOUT

DIN



WRITE CYCLE NO. 4 (UB/LBControlled)

DATA UNDEFINED

t WC

ADDRESS 1 ADDRESS 2

t WC

HIGH-Z

t PBW

WORD 1

LOW

WORD 2

t HD

t SA

t HZWE

ADDRESS

CS1

UB, LB

WE

DOUT

DIN

OE

DATAINVALID

t LZWE

t SD

t PBW

DATAINVALID

t SDt HD

t SA

t HA t HA

HIGHCS2


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DATA RETENTION SWITCHING CHARACTERISTICS

Symbol Parameter Test Condition Min. typ.(1) Max. Unit

Vdr VddforDataRetention SeeDataRetentionWaveform 1.2 3.6 V

idr DataRetentionCurrent Vdd=1.2V,CS1 ≥Vdd–0.2V Com. — 0.4 2 µA Ind. 4 Auto. 18

tsdr DataRetentionSetupTime SeeDataRetentionWaveform 0 — ns

trdr RecoveryTime SeeDataRetentionWaveform trC — ns

Note:1.TypicalvaluesaremeasuredatVdd=3.0V,TA=25oCandnot100%tested.

DATA RETENTION WAVEFORM (CS1 Controlled)

DATA RETENTION WAVEFORM (CS2 Controlled)

VDD

CS1 ≥ VDD - 0.2V

tSDR tRDR

VDR

CS1GND

Data Retention Mode

VDD

CS2 ≤ 0.2V

tSDR tRDR

VDR

CS2

GND

Data Retention Mode



ORDERING INFORMATION

IS62WV6416DALL (1.65V - 2.2V)

Industrial Range: -40°C to +85°C Speed (ns) Order Part No. Package

55 IS62WV6416DALL-55BLI miniBGA(6mmx8mm),Lead-free

IS62WV6416DALL-55TLI TSOPTYPEII,Lead-free

IS62WV6416DBLL (2.3V-3.6V)

Industrial Range: -40°C to +85°C Speed (ns) Order Part No. Package

45(35)1 IS62WV6416DBLL-45TI TSOPTYPEII IS62WV6416DBLL-45TLI TSOPTYPEII,Lead-free

IS62WV6416DBLL-45BI miniBGA(6mmx8mm) IS62WV6416DBLL-45BLI miniBGA(6mmx8mm),Lead-free IS62WV6416DBLL-45B2LI miniBGA(6mmx8mm),2CS,Lead-freeNote:1.Speed=35nsforVdd=3.3V±5%.Speed=45nsforVdd=2.3V-3.6V

IS65WV6416DBLL (2.3V-3.6V)

Automotive Range: -40°C to +125°C Speed (ns) Order Part No. Package

45 IS65WV6416DBLL-45CTLA3 TSOPTYPEII,Lead-free,CopperLead-frame IS65WV6416DBLL-45BLA3 miniBGA(6mmx8mm),Lead-free


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64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS ...DECEMBER 2012 A0-A15 CS1 OE WE 64K x 16 DECODER MEMORY...

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Transcript of 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS ...DECEMBER 2012 A0-A15 CS1 OE WE 64K x 16 DECODER MEMORY...