5SNG 0450X330300 LinPak phase leg IGBT module...Data Sheet, Doc. No. 5SYA 1458-03 May 20 5SNG...
Transcript of 5SNG 0450X330300 LinPak phase leg IGBT module...Data Sheet, Doc. No. 5SYA 1458-03 May 20 5SNG...
Data Sheet, Doc. No. 5SYA 1458-03 May 20
5SNG 0450X330300LinPak phase leg IGBT module
VCE = 3300 VIC = 2 x 450 A
Ultra low inductance phase-leg moduleCompact design with very high current densityParalleling without deratingAlSiC base-plate for high power cycling capabilityAlN substrate for low thermal resistanceLow-loss, fast and rugged SPT+ chip-set
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 3300 V
DC collector current IC TC = 105 °C, Tvj = 150 °C 450 A
Peak collector current ICM tp = 1 ms 900 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot TC = 25 °C, Tvj = 150 °C 4000 W
DC forward current IF 450 A
Peak forward current IFRM tp = 1 ms 900 A
Surge current IFSMVR = 0 V, Tvj = 150 °C,tp = 10 ms, half-sinewave 4000 A
IGBT short circuit SOA tpscVCC = 2500 V, VCEM CHIP £ 3300 VVGE £ 15 V, Tvj start £ 150 °C
10 µs
Isolation voltage Visol 1 min, f = 50 Hz 6000 V
Junction temperature Tvj 175 °C
Junction operating temperature Tvj(op) -40 150 °C
Case temperature TC -40 150 °C
Storage temperature Tstg -40 125 °C
Mounting torques 2)
Ms Base-heatsink, M6 screws 4 6
NmMt1 Main terminals, M8 screws 8 10
Mt2 Auxiliary terminals, M3 screws 0.9 1.1
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 607472) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
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IGBT characteristic values 3)
Parameter Symbol Conditions min typ max Unit
Collector (-emitter) breakdownvoltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 3300 V
Collector-emitter 4)
saturation voltage VCE sat IC = 450 A, VGE = 15 V
Tvj = 25 °C 2.5 2.9 V
Tvj = 125 °C 3.1 3.4 V
Tvj = 150 °C 3.25 V
Collector cut-off current ICES VCE = 3300 V, VGE = 0 V
Tvj = 25 °C 0.005 mA
Tvj = 125 °C 4 mA
Tvj = 150 °C 15 mA
Gate leakage current IGES VCE = 0 V, VGE = ± 20 V, Tvj = 125 °C -500 500 nA
Gate-emitter threshold voltage VGE(TO) IC = 40 mA, VCE = VGE, Tvj = 25 °C 4.7 6.7 V
Gate charge Qge IC = 450 A, VCE = 1800 V, VGE = -15 V ..15 V 3.3 µC
Input capacitance Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,Tvj = 25 °C
54 nF
Output capacitance Coes 3.1 nF
Reverse transfer capacitance Cres 2.4 nF
Internal gate resistance RGint per switch 1.19 Ω
Turn-on delay time td(on)VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load
Tvj = 25 °C 320 ns
Tvj = 125 °C 350 ns
Tvj = 150 °C 355 ns
Rise time tr
Tvj = 25 °C 75 ns
Tvj = 125 °C 85 ns
Tvj = 150 °C 90 ns
Turn-off delay time td(off)VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load
Tvj = 25 °C 860 ns
Tvj = 125 °C 1015 ns
Tvj = 150 °C 1050 ns
Fall time tf
Tvj = 25 °C 250 ns
Tvj = 125 °C 350 ns
Tvj = 150 °C 375 ns
Turn-on switching energy Eon
VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load
Tvj = 25 °C 520 mJ
Tvj = 125 °C 700 mJ
Tvj = 150 °C 770 mJ
Turn-off switching energy Eoff
VCC = 1800 V, IC = 450 A,RG = 1.5 W, CGE = 0 nF,VGE = ±15 V,Ls = 30 nH, inductive load
Tvj = 25 °C 530 mJ
Tvj = 125 °C 730 mJ
Tvj = 150 °C 800 mJ
Short circuit current ISC VCC = 2500 V, VGE = 15 V Tvj start = 150 °C 1900 A
3) Characteristic values according to IEC 60747 – 94) Collector-emitter saturation voltage is given at chip level
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Diode characteristic values 5)
Parameter Symbol Conditions min typ max Unit
Forward voltage 6) VF IF = 450 A
Tvj = 25 °C 2.05 2.5 V
Tvj = 125 °C 2.25 2.6 V
Tvj = 150 °C 2.2 V
Peak reverse recovery current IRM
VCC = 1800 V,IF = 450 A,VGE = ±15 V,RG = 1.5 W, CGE = 0 nF,Ls = 30 nH, inductive load
Tvj = 25 °C 820 A
Tvj = 125 °C 920 A
Tvj = 150 °C 930 A
Recovered charge Qrr
Tvj = 25 °C 320 µC
Tvj = 125 °C 490 µC
Tvj = 150 °C 570 µC
Reverse recovery time trr
Tvj = 25 °C 790 ns
Tvj = 125 °C 1050 ns
Tvj = 150 °C 1130 ns
Reverse recovery energy Erec
Tvj = 25 °C 360 mJ
Tvj = 125 °C 580 mJ
Tvj = 150 °C 690 mJ
5) Characteristic values according to IEC 60747 – 26) Forward voltage is given at chip level
NTC ThermistorParameter Symbol Conditions min typ max Unit
Rated resistor R25 4.7 kΩ
B-valueB25/85 R2 = R25 exp [B25/85(1/T2 – 1/(298.15K))] 3371 K
B25/100 R2 = R25 exp [B25/100(1/T2 – 1/(298.15K))] 3435 K
Package properties 7)
Parameter Symbol Conditions min typ max Unit
IGBT thermal resistancejunction to case Rth(j-c)IGBT 31 K/kW
Diode thermal resistancejunction to case
Rth(j-c)DIODE 54 K/kW
IGBT thermal resistance 2)
case to heatsinkRth(c-s)IGBT IGBT per switch, l grease = 1W/m x K 30 K/kW
Diode thermal resistance 2)
case to heatsinkRth(c-s)DIODE Diode per switch, l grease = 1W/m x K 35 K/kW
Comparative tracking index CTI 600
Module stray inductance Lσ CE total C1-E2 10 nH
Resistance, terminal-chip
RC1E1 IGBT / Diode
TC = 25 °C 0.25 / 0.34
mΩ
TC = 125 °C 0.35 / 0.47
TC = 150 °C 0.37 / 0.50
RC2E2 IGBT / Diode
TC = 25 °C 0.35 / 0.44
TC = 125 °C 0.49 / 0.62
TC = 150 °C 0.53 / 0.66
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max Unit
Dimensions L x W x H Typical 140 x 100 x 38 mm
Clearance distance in air daaccording to IEC 60664-1and EN 50124-1
Term. to base: 20mm
Term. to term: 8
Surface creepage distance dsaccording to IEC 60664-1and EN 50124-1
Term. to base: 30mm
Term. to term: 30
Mass m 820 g
7) Package and mechanical properties according to IEC 60747 – 15
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Electrical configuration
Outline drawing
Note: all dimensions are shown in millimeters
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. VIII.This product has been designed and qualified for Industrial Level.
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0 1 2 3 4 50
150
300
450
600
750
900
VGE = 15 V
I C in
A
VCE in V
150 °C
125 °C
25 °C
5 6 7 8 9 10 11 12 130
150
300
450
600
750
900
I C in
A
VGE in V
25 °C
125 °C
150 °C
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0 1 2 3 4 50
150
300
450
600
750
900
Tvj = 25 °C
I C in
A
VCE in V
19 V
17 V
15 V
13 V
11 V
9 V
0 1 2 3 4 5 60
150
300
450
600
750
900
Tvj = 150 °C
I C in
A
VCE in V
19 V
17 V
15 V
13 V
11 V
9 V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
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0 150 300 450 600 750 9000.0
0.5
1.0
1.5
2.0
125 °C150 °C
Eoff
Eon
VCC = 1800 VVGE = ±15 VRGon = 1.5 W
RGoff = 1.5 WCGE = 0 nFTvj = 125, 150 °CLs = 30 nH
Eon
, Eof
f in
J
IC in A0 1 2 3 4 5 6 7 8 9 10 11
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
125 °C150 °C
VCC = 1800 VIC = 450 AVGE = ±15 VCGE = 0 nFTvj = 125, 150 °CLs = 30 nH
Eon
, Eof
f in
JRG in W
Eon
Eoff
Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor
0 150 300 450 600 750 9000.01
0.1
1
t d(on
), t r,
t d(o
ff),t f
in µ
s
td(on)
tr
tf
td(off)
VCC = 1800 VVGE = ±15 VRGon = 1.5 W
RGoff = 1.5 WCGE = 0 nFTvj = 150 °CLs = 30 nH
IC in A0 1 2 3 4 5 6 7 8 9 10 11
0.1
1
t d(on
), t r,
t d(o
ff),t f
in
µs td(on)
tr
tf
td(off)
VCC = 1800 VIC = 450 AVGE = ±15 VCGE = 0 nFTvj = 150 °CLs = 30 nH
RG in W
Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor
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0 5 10 15 20 25 30 35100
101
102
VGE = 0 VfOSC = 1 MHzVOSC = 50 mV
C in
nF
VCE in V
Cies
Coes
Cres
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0-15
-10
-5
0
5
10
15
20
VG
Ein
V
QG in µC
VCC = 1800 V
VCC = 2500 V
Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. 10 Typical gate charge characteristics
0 500 1000 1500 2000 2500 3000 35000.0
0.5
1.0
1.5
2.0
chip module
VCC £ 2500 V, Tvj = -40..150 °CVGE = ±15 V, RG = 1.5 W
I Cpu
lse/ I
C
VCE in V
Fig. 11 Turn-off safe operating area (RBSOA)
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0 150 300 450 600 750 9000
250
500
750
1000
Qrr
125 °C150 °C
IRM
Erec
VCC = 1800 VVGE = ±15 VRGon = 1.5 WCGE = 0 nFTvj = 125, 150 °CLs = 30 nH
E rec
in m
J, I R
M in
A, Q
rr in
µC
IF in A2 3 4 5 6 7 8
300
450
600
750
900
1050
1200
125 °C150 °C
RG =
10
W
RG =
6.8
W
RG =
1.5
W
RG =
1.2
W
RG =
2.2
W
RG =
3.3
W
Erec
E rec
in m
J, I R
M in
A, Q
rr in
µC
IRM
Qrr
VCC = 1800 VIc = 450 AVGE = ±15 VCGE = 0 nFTvj = 125, 150 °CLs = 30 nH
di/dt in kA/µs
RG =
4.7
W
Fig. 12 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt
0 1 2 30
150
300
450
600
750
900
I F in
A
VF in V
150 °C
125 °C
25 °C
0 600 1200 1800 2400 3000 36000
300
600
900
1200VCC £ 2500 Vdi/dt £ 12 kA/msTvj = -40..150 °CLs = 30 nH
I R in
A
VR in V
Fig. 14 Typical diode forward characteristics chip level Fig. 15 Safe operating area diode (SOA)
10-3 10-2 10-1 100 101100
101
102
Zth(j-c) Diode
Zth(j-c) IGBT
Z th(
j-c)
in K
/kW
IG
BT,
DIO
DE
t in s
Analytical function for transient thermal impedance:
)e-(1R=(t)Zn
1i
t/-ic)-(jth å
=
it
i 1 2 3 4 5
IGBT
Ri(K/kW) 17.38 7.31 6.23
ti(ms) 65.7 1220 3.67
DIO
DE Ri(K/kW) 31.1 12.6 9.95
ti(ms) 54.4 3.33 881
Fig. 16 Thermal impedance vs. time
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