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5SDD_10F6000 - ABB High Voltage Diode
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Transcript of 5SDD_10F6000 - ABB High Voltage Diode
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7/29/2019 5SDD_10F6000 - ABB High Voltage Diode
1/5
5SDD 10F6000
TS - D/010/98b Aug-11 1 of 5
5SDD 10F6000Old part no. DV 808-1000-60
High Voltage Diode
Propert ies Key Parameters Low forward voltage drop VRRM = 6 000 V Low recovery charge IFAVm = 1 363 A High operating temperature IFSM = 17 500 A Low leakage current VTO = 1.015 V
Applications rT = 0.407 m Rectifier bridges
Types
VRRM
5SDD 10F6000 6 000 V
Conditions: Tj = -40 150 C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mount ing force 22 2 kN
m Weight 0.46 kg
DS Surface creepage
distance
30 mm
Da Air s tr ike distance 20.5 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
http://www.abb.com/semiconductorshttp://www.abb.com/semiconductorshttp://www.abb.com/semiconductors -
7/29/2019 5SDD_10F6000 - ABB High Voltage Diode
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5SDD 10F6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 2 of 5
Maximum Ratings Maximum Limits Unit
VRRM Repetitive peak reverse voltage
Tj = -40 150 C
6 000 V
IFAVm Average forward current
Tc = 85 C
1 363 A
IFRMS RMS forward current 2 142 A
IRRM Repetitive reverse current,
VR = VRRM
75 mA
IFSM Non repetitive peak surge current
VR = 0 V, half sine pulse, Tj = 25 C
tp = 8.3 ms 20 300 A
tp = 10 ms 19 000 A
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 8.3 ms 18 700 A
tp = 10 ms 17 500 A
I2t Limiting load integralVR = 0 V, half sine pulse, Tj = 25 C
tp = 8.3 ms 1 710 000 A2s
tp = 10 ms 1 805 000 A2s
Limiting load integral
VR = 0 V, half sine pulse
tp = 8.3 ms 1 450 000 A2s
tp = 10 ms 1 531 250 A2s
Tjmi n -Tjmax Operating temperature range -40 150 C
TSTG Storage temperature range -40 150 C
Unless otherwise specified Tj = 150 C
Characteristics Value Unit
min typ max
VT0 Threshold voltage
IF1 = 2 142 A, IF2 = 6 425 A
1.015 V
rT Forward slope resistance 0.407 mVFM Maximum forward vo ltage
IFM = 1 500 A
1.60 V
Qrr Recovered charge
VR = 100 V, IFM = 1 000 A, diF/dt = -10 A/s
3 000 4 000 C
Unless otherwise specified Tj = 150 C
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5SDD 10F6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 3 of 5
Thermal Parameters Value Unit
Rthjc Thermal resistance
junc tion to case
double side cooling 20 K/kW
anode side cooling 34
cathode side cooling 48
Rthch Thermal resistance
case to heatsink
double side cooling 5 K/kW
single side cooling 10
Transient Thermal Impedance
Analytical function for t ransientthermal impedance
4
1
))/exp(1(
i
iithjc tRZ
Conditions:
Fm =22 2 kN, Double side cooled
i 1 2 3 4
Ri( K/kW ) 11.83 4.26 1.63 2.28
i( s ) 0.432 0.071 0.01 0.0054
0
2
4
6
8
10
12
14
16
18
20
22
0,001 0,01 0,1 1 10
Square wave pulse duration t d ( s )
Transientthermalimpedance
junctiontocaseZthjc
(K/kW
)
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
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7/29/2019 5SDD_10F6000 - ABB High Voltage Diode
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5SDD 10F6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 4 of 5
0
1000
2000
3000
4000
5000
6000
7000
0 1 2 3 4V F ( V )
IF(
A)
150 C25 C
Fig. 3 Maximum forward voltage drop characteristics
10
14
18
22
26
30
34
38
1 10 100t ( ms )
IFSM
(kA)
0,8
1
1,2
1,4
1,6
1,8
2
2,2
i2dt(106
A2s
)
IFSM
i2dt
0
5
10
15
20
1 10 100
Number n of cycl es at 50 Hz
IFSM
(kA)
VR
= 0 V
VR 0.5 VRRM
Fig. 4 Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Fig. 5 Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
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7/29/2019 5SDD_10F6000 - ABB High Voltage Diode
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5SDD 10F6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 5 of 5
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400 1600
I FAV ( A )
PT(
W)
120 180
DC
= 60
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400 1600
I FAV ( A )
PT(
W)
= 30 60 90 120 180
270
DC
Fig. 6 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7 Forward power loss vs. average forward
current, square waveform, f = 50 Hz,
T = 1/f
60
70
80
90
100
110
120
130
140
150
160
0 200 400 600 800 1000 1200 1400 1600I FAV ( A )
TC(
C)
180120
DC
= 6060
70
80
90
100
110
120
130
140
150
160
0 200 400 600 800 1000 1200 1400 1600I FAV ( A )
TC(
C)
180
DC
270
1209060 = 30
Fig. 8 Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz,
T = 1/f
Fig. 9 Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz,
T = 1/f
Notes: