5SDD_10F6000 - ABB High Voltage Diode

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    5SDD 10F6000

    TS - D/010/98b Aug-11 1 of 5

    5SDD 10F6000Old part no. DV 808-1000-60

    High Voltage Diode

    Propert ies Key Parameters Low forward voltage drop VRRM = 6 000 V Low recovery charge IFAVm = 1 363 A High operating temperature IFSM = 17 500 A Low leakage current VTO = 1.015 V

    Applications rT = 0.407 m Rectifier bridges

    Types

    VRRM

    5SDD 10F6000 6 000 V

    Conditions: Tj = -40 150 C,

    half sine waveform,

    f = 50 Hz

    Mechanical Data

    Fm Mount ing force 22 2 kN

    m Weight 0.46 kg

    DS Surface creepage

    distance

    30 mm

    Da Air s tr ike distance 20.5 mm

    Fig. 1 Case

    ABB s.r.o.

    Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

    tel.: +420 261 306 250, http://www.abb.com/semiconductors

    http://www.abb.com/semiconductorshttp://www.abb.com/semiconductorshttp://www.abb.com/semiconductors
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    5SDD 10F6000

    ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

    ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 2 of 5

    Maximum Ratings Maximum Limits Unit

    VRRM Repetitive peak reverse voltage

    Tj = -40 150 C

    6 000 V

    IFAVm Average forward current

    Tc = 85 C

    1 363 A

    IFRMS RMS forward current 2 142 A

    IRRM Repetitive reverse current,

    VR = VRRM

    75 mA

    IFSM Non repetitive peak surge current

    VR = 0 V, half sine pulse, Tj = 25 C

    tp = 8.3 ms 20 300 A

    tp = 10 ms 19 000 A

    Non repetitive peak surge current

    VR = 0 V, half sine pulse

    tp = 8.3 ms 18 700 A

    tp = 10 ms 17 500 A

    I2t Limiting load integralVR = 0 V, half sine pulse, Tj = 25 C

    tp = 8.3 ms 1 710 000 A2s

    tp = 10 ms 1 805 000 A2s

    Limiting load integral

    VR = 0 V, half sine pulse

    tp = 8.3 ms 1 450 000 A2s

    tp = 10 ms 1 531 250 A2s

    Tjmi n -Tjmax Operating temperature range -40 150 C

    TSTG Storage temperature range -40 150 C

    Unless otherwise specified Tj = 150 C

    Characteristics Value Unit

    min typ max

    VT0 Threshold voltage

    IF1 = 2 142 A, IF2 = 6 425 A

    1.015 V

    rT Forward slope resistance 0.407 mVFM Maximum forward vo ltage

    IFM = 1 500 A

    1.60 V

    Qrr Recovered charge

    VR = 100 V, IFM = 1 000 A, diF/dt = -10 A/s

    3 000 4 000 C

    Unless otherwise specified Tj = 150 C

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    5SDD 10F6000

    ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

    ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 3 of 5

    Thermal Parameters Value Unit

    Rthjc Thermal resistance

    junc tion to case

    double side cooling 20 K/kW

    anode side cooling 34

    cathode side cooling 48

    Rthch Thermal resistance

    case to heatsink

    double side cooling 5 K/kW

    single side cooling 10

    Transient Thermal Impedance

    Analytical function for t ransientthermal impedance

    4

    1

    ))/exp(1(

    i

    iithjc tRZ

    Conditions:

    Fm =22 2 kN, Double side cooled

    i 1 2 3 4

    Ri( K/kW ) 11.83 4.26 1.63 2.28

    i( s ) 0.432 0.071 0.01 0.0054

    0

    2

    4

    6

    8

    10

    12

    14

    16

    18

    20

    22

    0,001 0,01 0,1 1 10

    Square wave pulse duration t d ( s )

    Transientthermalimpedance

    junctiontocaseZthjc

    (K/kW

    )

    Fig. 2 Dependence transient thermal impedance junction

    to case on square pulse

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    5SDD 10F6000

    ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

    ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 4 of 5

    0

    1000

    2000

    3000

    4000

    5000

    6000

    7000

    0 1 2 3 4V F ( V )

    IF(

    A)

    150 C25 C

    Fig. 3 Maximum forward voltage drop characteristics

    10

    14

    18

    22

    26

    30

    34

    38

    1 10 100t ( ms )

    IFSM

    (kA)

    0,8

    1

    1,2

    1,4

    1,6

    1,8

    2

    2,2

    i2dt(106

    A2s

    )

    IFSM

    i2dt

    0

    5

    10

    15

    20

    1 10 100

    Number n of cycl es at 50 Hz

    IFSM

    (kA)

    VR

    = 0 V

    VR 0.5 VRRM

    Fig. 4 Surge forward current vs. pulse length,

    half sine wave, single pulse,

    VR = 0 V, Tj = Tjmax

    Fig. 5 Surge forward current vs. number

    of pulses, half sine wave, Tj = Tjmax

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    5SDD 10F6000

    ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic

    ABB s.r.o. reserves the right to change the data contained herein at any time without noticeTS - D/010/98b Aug-11 5 of 5

    0

    500

    1000

    1500

    2000

    2500

    3000

    3500

    0 200 400 600 800 1000 1200 1400 1600

    I FAV ( A )

    PT(

    W)

    120 180

    DC

    = 60

    0

    500

    1000

    1500

    2000

    2500

    3000

    3500

    0 200 400 600 800 1000 1200 1400 1600

    I FAV ( A )

    PT(

    W)

    = 30 60 90 120 180

    270

    DC

    Fig. 6 Forward power loss vs. average forward

    current, sine waveform, f = 50 Hz, T = 1/f

    Fig. 7 Forward power loss vs. average forward

    current, square waveform, f = 50 Hz,

    T = 1/f

    60

    70

    80

    90

    100

    110

    120

    130

    140

    150

    160

    0 200 400 600 800 1000 1200 1400 1600I FAV ( A )

    TC(

    C)

    180120

    DC

    = 6060

    70

    80

    90

    100

    110

    120

    130

    140

    150

    160

    0 200 400 600 800 1000 1200 1400 1600I FAV ( A )

    TC(

    C)

    180

    DC

    270

    1209060 = 30

    Fig. 8 Max. case temperature vs. aver. forward

    current, sine waveform, f = 50 Hz,

    T = 1/f

    Fig. 9 Max.case temperature vs. aver. forward

    current, square waveform, f = 50 Hz,

    T = 1/f

    Notes: