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MI CROWAVE POWER GaAs FETMI CROWAVE POWER GaAs FETMI CROWAVE POWER GaAs FETMI CROWAVE POWER GaAs FETMICROWAVE SEMI CONDUCTORMICROWAVE SEMICONDUCTORMICROWAVE SEMI CONDUCTORMICROWAVE SEMICONDUCTOR TIM5964-4ULTIM5964-4ULTIM5964-4ULTIM5964-4ULTECHNICAL DATATECHNICAL DATATECHNICAL DATATECHNICAL DATA

FEATURESFEATURESFEATURESFEATURES

HIGH POWER BROAD BAND INTERNALLY MATCHED

P1dB=36.5dBm at 5.9GHz to 6.4GHz

HIGH GAIN HERMETICALLY SEALED PACKAGE

G1dB=10.0dB at 5.9GHz to 6.4GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25C )

CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.

Output Power at 1dB

Compression Point

P1dB dBm 35.5 36.5

Power Gain at 1dB

Compression Point

G1dB dB 9.0 10.0

Drain Current IDS1 A 1.1 1.3

Gain F latness G dB 0.6

Power Added Efficiency add

VDS= 10V

f= 5.9 6.4GHz

% 37

3rd Order Intermodulation

Distortion

IM3 dBc -44 -47

Drain Current IDS2

Two Tone Test

Po= 25.5dBm

(Single Carrier Level) A 1.1 1.3

Channel Temperature Rise Tch VDSXIDSXRth(c-c) C 80

ELECTRICAL CHARACTERISTICS ( Ta= 25C )

CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.

Transconductance gm VDS=3V

IDS= 1.5A

mS 900

Pinch-off Voltage VGSoff VDS=3V

IDS= 15mA

V -1.0 -2.5 -4.0

Saturated Drain Current IDSS VDS=3V

VGS= 0V

A 2.6 3.5

Gate-Source Breakdown

Voltage

VGSO IGS= -50A V -5

Thermal Resistance Rth(c-c) Channel to Case C/W 4.5 6.0

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. I t is therefor advisable to contact TOSHI BA

before proceeding with design of equipment incorporating this product.

Apr. 2000

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ABSOLUTE MAXIMUM RATINGS ( Ta= 25C )

CHARACTERISTICS SYMBOL UNIT RATING

Drain-Source Voltage VDS V 15

Gate-Source Voltage VGS V -5

Drain Current IDS A 3.5

Total Power Dissipation (Tc= 25 C) PT W 23

Channel Temperature Tch C 175

Storage Tstg C -65 +175

PACKAGE OUTLINE (2-11D1B)

Unit in mm

Gate

Source

Drain

HANDLI NG PRECAUTI ONS FOR PACKAGED TYPEHANDLI NG PRECAUTI ONS FOR PACKAGED TYPEHANDLI NG PRECAUTI ONS FOR PACKAGED TYPEHANDLI NG PRECAUTI ONS FOR PACKAGED TYPE

Soldering iron should be grounded and the operating time should not exceed 10 seconds at

260C.

3.2

0.3

0.1

+0.1

-0.0

5

0.2

MAX.

1.6

0.3

2.6

0.3

5.0

MAX.

4.0

MIN.

4.0

MIN.

12.9

0.2

4-C1.2

0.60.15

170.3

11.0 MAX.

210.2

12

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RF PERFORMANCES

34343434

35353535

36363636

37373737

38383838

39393939

5.75.75.75.7 5.85.85.85.8 5.95.95.95.9 6666 6.16.16.16.1 6.26.26.26.2 6.36.36.36.3 6.46.46.46.4 6.56.56.56.5 6.66.66.66.6

Po(dBm)

Po(dBm)

Po(dBm)

Po(dBm)

Frequency (GHz)

Output Power vs. Frequency

VDS= 10V

IDS1.1APin= 26.5dBm

addaddaddadd

31313131

32323232

33333333

34343434

35353535

36363636

37373737

38383838

39393939

40404040

21212121 23232323 25252525 27272727 29292929 31313131

Pin (dBm)Pin (dBm)Pin (dBm)Pin (dBm)

Po(dBm)

Po(dBm)

Po(dBm)

Po(dBm)

0000

10101010

20202020

30303030

40404040

50505050

60606060

70707070

80808080

90909090

add(%)

add(%)

add(%)

add(%)

PoPoPoPo

Output Power vs. Input Power

f= 6.15GHz

VDS= 10V

IDS1.1A

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0000

10101010

20202020

30303030

0000 40404040 80808080 120120120120 160160160160 200200200200

Tc ()Tc ()Tc ()Tc ()

PPPPTTTT(

W)

(W)

(W)

(W)

POWER DISSIPATION vs. CASE TEMPERATURE

-60-60-60-60

-50-50-50-50

-40-40-40-40

-30-30-30-30

-20-20-20-20

21212121 23232323 25252525 27272727 29292929 31313131

IMIMIMIM

3333

(dBc)

(dBc)

(dBc)

(dBc)

VDS= 10V

IDS1.1Af= 6.15GHz

f= 5MHz

IM3vs. OUTPUT POWER CHARACTERISTICS

Po(dBm), Single Carrier Level