5 th LHC Radiation Day Radiation response of RADMON sensors T. Wijnands (TS/LEA), C. Pignard...
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Transcript of 5 th LHC Radiation Day Radiation response of RADMON sensors T. Wijnands (TS/LEA), C. Pignard...
5th LHC Radiation Day
Radiation response of Radiation response of RADMONRADMON sensors sensors
T. Wijnands (TS/LEA), C. Pignard (TS/LEA)
Acknowledgements :
UCL Louvain-La-Neuve, PSI Villingen, TSL Uppsala, CIS-BIO (CEA Saclay),
PROSPERO (CEA-Valduc), A. Jaksic (Tyndall/NMRC)
NMRC Radfets 100 – 400 – 1000 nm
Toshiba TC554001AF-70 SRAM
SIEMENS BPW34FS – PIN diode
5th LHC Radiation Day 2
Radiation SensorsRadiation Sensors
• RADFET • Measure trapped charge in gate oxide• At constant current : V proportional to
Total Ionising Dose
• Static RAM• Measure radiation induced voltage spikes over a
reversed biased p-n junction• Number of “0-1 or 1-0” in SRAM proportional to
the hadron fluence (E> 20 MeV)
• P-I-N Diode• Measure conductivity variation at high forward
injection• At constant current : V proportional to
1 MeV eq. neutron fluence
TOSHIBA TC554001AF-70L
SIEMENS BPW34
NMRC 300/50 400 nm
5th LHC Radiation Day 3
NMRC Radfets - Electrical properties at 0 GyNMRC Radfets - Electrical properties at 0 Gy
Manufacturer NMRC NMRC NMRC
Oxide 1000 nm 400 nm 100 nm
Type 300/50 W/L 300/50 W/L 300/50 W/L
Readout Current
8.7 A 8.7 A 8.7 A
Threshold voltage
5.43 V 1.57 V 2.72 V
Temp Coefficient
-1.6 mV/ºC -0.9 mV/ºC -0.7 mV/ºC
Co-60 sensitivity
215 mV/Gy 65 mV/Gy 2.4 mV/Gy
Die size 1 mm x 1 mm
250 mm Kovar lid (Ni, Co, Fe)
5th LHC Radiation Day 4
NMRC Radfets - Readout designNMRC Radfets - Readout design
RADMON design choice : TID tolerance = 200 Gy
CMOS analog switching at maximum Vdd = 10 V 12 bit ADC at 10 V (2.44 mV/bit) Maximum V under irradiation :
• 100 nm : V = 10 V – 2.72 V = 7.28 V (3 kGy)• 400 nm : V = 10 V – 1.57 V = 8.43 V (130 Gy)• 1 m : V = 10 V – 5.43 V = 4.57 V (21 Gy)
Resolution :• 100 nm : 1 bit = 100 rad• 400 nm : 1 bit = 3.8 rad• 1 m : 1 bit = 1.1 rad
5th LHC Radiation Day 5
NMRC Radfets - Thermo compensationNMRC Radfets - Thermo compensation
Oxide Thickness 1000 nm 400 nm 100 nm
Temp Coeff 0Gy -1.6 mV/ºC -0.9 mV/ºC -0.7 mV/ºC
Temp Coeff 200 Gy < -10 mV/ºC -4 mV/ºC -1.14 mV/ºC
Co-60 sensitivity 215 mV/Gy 65 mV/Gy 2.4 mV/Gy
0 50 100 150 200-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Dose [Gy]
Tem
p c
oef
[m
V/d
egre
e]
NMRC Radfets
NMRC 100 nm
NMRC 400 nm
NMRC 1000 nm
Co-60
1 bit ADC = 2.44 mV
5th LHC Radiation Day 6
RADMONRADMON - Thermo compensation in practice - Thermo compensation in practice
NMRC RADFET 1000 nm (non irradiated device)
2.44 mV = 1 bit ADC
5th LHC Radiation Day 7
NMRC Radfets - Voltage Rise time at 0 GyNMRC Radfets - Voltage Rise time at 0 Gy
• NMRC Radfet 1000 nm• Readout current 8.7A• Short circuit : CMOS analog switch (TC4S66F Toshiba)
5th LHC Radiation Day 8
NMRC Radfets - Voltage Rise time at 50 GyNMRC Radfets - Voltage Rise time at 50 Gy
• NMRC Radfet 1000 nm• Readout current 8.7A• Short circuit : CMOS analog switch (TC4S66F Toshiba)
5th LHC Radiation Day 9
NMRC Radfets : energy response for photonsNMRC Radfets : energy response for photons
• Co-60 <E> = 1.25 MeV• Dose rate 50 Gy/hr • ZTC readout
• NMRC Radfet 400 nm
Courtesey A. Jaksic (Tyndall)
400 nm100 nm1000 nm
5th LHC Radiation Day 10
NMRC Radfets : energy response for protons (1)NMRC Radfets : energy response for protons (1)
0 5 10 15 20 25 300
1000
2000
3000
4000
5000
Dose [Gy]
Th
res
ho
ld v
ola
tge
[m
V] 1000 nm
100 nm400 nm
250 MeV protons
• Proton flux : 7 107 cm-2
• Thermo compensated (ZTC) readout
0 50 100 150 200 2500
0.5
1
1.5
2
Proton Energy [MeV]
No
rma
lise
d T
hre
sh
old
vo
ltag
e
NMRC 400 nm
Total Dose 100 Gy
• Normalisation : 60 MeV protons
5th LHC Radiation Day 11
NMRC Radfets : energy response for protons (2)NMRC Radfets : energy response for protons (2)
0 10 20 30 400
0.5
1
1.5
2
Dose [Gy]
Th
res
ho
ld v
olta
ge
[V
]
Protons 60 MeV Co-60
NMRC 400 nm
5th LHC Radiation Day 12
SEU counter – SRAM cell layoutSEU counter – SRAM cell layout
• 0.4 m technology • 3 – 5 V operation• 4 Mbit (524288 words x 8 bits)• grid arrangement 8192 x 512• min cycle time 70 ns
Toshiba Toshiba TC554001AF-70L
5th LHC Radiation Day 13
SEU counter - 6 T SRAM cell 0.4 SEU counter - 6 T SRAM cell 0.4 mm
• Asymmetric SRAM cell • Vdd = 3 or 5 V operation• 3 TFTs, 3 bulk transistors• Read at 3 V if :
(Q3)/(Q1) > 3.0• Write at 3 V if :
(Q4)/(Q2) < 0.1
Bit Line
Vdd
Read word Line
Q1Q2
Q5
Q3 Q4
Q6
Write word Line
N
N N
N
PP
Toshiba Toshiba TC554001AF-70L
5th LHC Radiation Day 14
SEU counter – Radiation effectsSEU counter – Radiation effects
Effect of lowering the bias Vdd :
• SEU sensitivity increased• TID tolerance is decreased
(writing more difficult because (Q4)/(Q2) increased)
Qcrit = CnodeVdd + Irestore/f
Q = radiation induced charge Cnode = capacity of the nodeI restore = current restoring transistorf = frequency of event
SEU if SEU if Q > QQ > Qcritcrit
5th LHC Radiation Day 15
SEU counter – Proton irradiationSEU counter – Proton irradiation
60 MeV protons
5th LHC Radiation Day 16
Pin Diode - BPW34FS key characteristicsPin Diode - BPW34FS key characteristics
• Temperature coefficient :• 2.4 mV/ºC vs 2.5 mV/ºC (after 5 1012 n/cm2)
• Linear dependence to 1 MeV neutron fluence • fluence > 4 1012 n/cm2
• Annealing at room temperature very small
5th LHC Radiation Day 17
PIN diode – 1 MeV neutron responsePIN diode – 1 MeV neutron response
PROSPERO REACTOR
CEA Val Duc
Neutron flux : 2.88 x 1010 n/cm2.s
Irradiation of a single diode
5th LHC Radiation Day 18
Pin Diode - response to 250 MeV protonsPin Diode - response to 250 MeV protons
• Improved resolution for RADMON monitors• pre-irradiation with 4 x 1012 n/cm2 at 1 MeV• 3 diodes in series – thermo compensated
0 0.5 1 1.5 2 2.5 3 3.5
x 1010
1820
1825
1830
1835
1840
1845
1850
Proton fluence [cm-2]
Th
res
ho
ld v
olta
ge
[m
V] 3 x SIEMENS BPW34FS
5th LHC Radiation Day 19
RADMONRADMON radiation tests – 173 MeV neutrons radiation tests – 173 MeV neutrons
A.V. Prokofiev, M.B. Chadwick, S.G. Mashnik, N. Olsson, and L.S. Waters. Journal of Nuclear Science and Technology, Supplement 2, pp.112-115 (2002)
0 20 40 60 80 100 120 140 160 18010
-3
10-2
10-1
Neutron energy [MeV]
Re
lati
ve
Sp
ec
tra
l F
lue
nc
e [
1/M
eV
]
Neutrons at 0 degreesfrom 177.3 MeVprotonson 24-mm 7Li targetNormalised : peak area = 1
TSL Uppsala, Sweden
Acknowledgements : A. Prokofiev
5th LHC Radiation Day 20
RADMONRADMON - response to 173 MeV neutrons - response to 173 MeV neutrons
• Fluence : 1.5 x 108 cm-2
• Flux : 1 x 105 cm-2 s-1
0 500 1000 1500 20000
1000
2000
3000
4000
5000
6000
7000
8000
Time [s]
SE
U c
ts o
r T
hre
sh
old
Vo
ltag
e [
V]
SEU counts * 100NMRC 1000 nm3 PIN diodes series
5th LHC Radiation Day 21
SummarySummary• NMRC Radfets
• Radiation response sufficiently well understood• 3 types (gate oxide thickness) allows for flexibility• 2 radfets in // to improve range and resolution
• SEU counters • Time resolution to radiation monitoring• 3 V : high resolution, increased uncertainty• 5 V : reduced resolution, high precision• Total Dose effects visible below 200 Gy
• PIN diodes• Linear response to 1 MeV neutrons after ~3 x 1012 neutrons• Low fading at room temperature• Very small variation of Temperature coefficient with n fluence• Use of 3 pre irradiated diodes in // to provide :
• improved resolution• remove initial threshold