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All possible questions from Electronic Device and circuits common to ECE branch,Download it here

ELECTRONIC DEVICES AND CIRCUITS - EE2203

QUESTION BANK

UNIT I

PN DIODE AND ITS APPLICATIONS

1. How a PN junction can be formed?

2. List out the common diode applications?

3. Define avalanche and zener breakdown?

4. What are the current components of diode?

5. Draw and explain the VI characteristics of pn junction diode.

6. Define Peak Inverse voltage of a diode.

7. Differentiate between static and dynamic resistance of a diode.

8. Although zener diode is operated in the reverse breakdown

region, but it does not burn. Why?

9. Differentiate between avalanche and zener breakdown.

10. Discuss the operation of pn diode under forward and reverse

biasing.

11. Define forward recovery time and reverse recovery

Time ?

12. What are the basic elements of regulated power supply?

13. What is ripple factor?

14. What is a rectifier?

15. Define regulation of a rectifier?

16. Define efficiency of a rectifier?

17. What is a filter and state its types?

18. What is SMPS?

19. Define intrinsic stand off ratio?

20. What is a regulator and state its types?

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21. Transistor is called current controlled device Why?

22. Define drift current and diffusion current.

23. What is meant by Threshold or cut-in voltage? Vr? Give its

value for silicon and germanium.

24. Define dynamic resistance.

If bulk resistance is 4 and forward current IF = 2.5 milliamps 25. What is the ac resistance?

26. The leakage current in a certain diode is 25A at 25 degree

Celsius . Find the change in temperature required for a leakage

Current of 40A.

27. State law of junction.

28. Define Reverse saturation current.]

29. What is the principle of operation of LCD?

30. Discuss the relative advantages and disadvantages of

LEDs and LCDs.

31. What are optoelectronic deviceOptoelectronic device are light operated (photoelectronic)

devices, light emitting device or devices that modify light32. Write down the classification of optoelectronic devicea) Photoemissive b) Photoconductive or photovoltaic33. Define luminescenceLight can be emitted by a solid when it is stimulated by the

source of incident energy. This phenomenon is called

luminescence34. What are the types of luminescence?a) Photoluminescence b) Electroluminescence

35 . Define photoluminescenceIt is incident energy is in the form of photons, then it is called

photoluminescence36. Define electroluminensenceIf the radiation is produced by the application of an electric

field, it is termed as electroluminescence37. Which colour of light is emitted by GaAs, Gp, GaAspGaAs - Infra red radiation (invisible) GaP - Red or Green

GaAsP - Red or Yellow38. Define injection laser diode

When the emitted light is coherent, (ie) essentially

monochromatic, then such a diode is refered to as an injection

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laser diode39. What are the liminations of LCD?* It requises an external or internal light source * Temperature

range is limited to about 60oC * Lime time is limited due to chemical

degeneration40. What are the two types of LCDs?a) Dynamic scattering type LCD b) Field effect LCD

41. Name the crystal materls used to LCD?a) Nematic b) Cholesteric42. What are the types of liquid crystal cells?a) Transmittive type b) Reflective type43. What re the advantages of LCD?* They require less voltage * They are economical* They have a low power consumption44. What are the disadvantages of LCD?

* They are slow devices (ie) turn On & turn OFF time

are quite large* They occupy large area * Their life span is quite small45. What is the main difference between laser & LED?Laser emits monochromatic or coherent light whereas LED

emits incoherent light46. What are the disadvantages of using laser diode?Because of high-energy density, a laser beam is quite

dangerous eye protection must be worn when working with

these devices47. Define injection laser diodeLaser diode which operates in a pulsed manner are termed

injection laser diodes48. Define continuous wave laser diodeLaser diode which produce a continuous output are refered as

continuous wave laser diode49. Define dark currentIn photodiode when no light is applied, there is a minimum

reverse leakage current called as dark current

50. Give some applications of photo diodesThey are used as demodulators, encoders, optical

communication system, high speed counting and switching

circuits, computer card punching etc.51. What is photovoltaic effect?If a PN junction is open circuited the energy is used to create a

potential difference which is proportionl to the incident light. This

phenomenon is clled pen[hotovoltaic effect

UNIT II

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BJT AND ITS APPLICATIONS

1. Define punch through in early effect.

2. Write short notes on heat sink.

3. Explain transistor as an amplifier.

4. Calculate the values of Icand Ie for a transistor with =0.97 and

Icbo =10A.IB is measured as 50A.

5. Sketch the h-parameter equivalent circuit for a CE transistor.

6. Explain how transistor is used as rectifier?

7. Why is transistor called a current controlled device ?

8. Why is collector region is greater than emitter region?

9. Explain about the depletion layers of the transistors.

10. Give the classification of power transistor based on

9.

Frequency of operation.10.

Current capacity.

11. Give the relationship between Alpha and Beta.

12. Draw and explain input and output characteristics of CB

configuration.

13. How does early effect affect the BJT characteristics in CB

configuration?

14. What are the limitations of h parameters?

15. Define TransistorTransistor consists of two junctions formed by sandwitching either

P-type or N-type semiconductor between a pair of opposite types.16. Write the current amplification factor for a CB transistor.a = Change in Collector Current at constant VCB / Change in

emitter current

17. Write the formula for input resistance in a CB transistorInput resistance = Change in base - emitter voltage / Change in

emitter current at constant VCB18. Write the current amplification factor for a CE transistor.b = Change in Collector Current / Change in base current at

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constant VCE19 . Define transistor action.A transistor consists of 2 coupled PN junctions. The base is a

common region to both junctions and makes a coupling

between them. Since the base regions are smaller, a significant

interaction between junctions will be available. This is called

transistor actions.

20. Define delay timeIt is defined as the time required for the current to rise from 0 to

10% of its maximum value.21. Define rise time

It is the time required for the current to rise from 0 to 90

percentage of the maximum value.

22. Define turn-on timeIt is the time required for the current to rise from 0 to 90

percentage of the maximum value ton = td + tr23.. Define fall timeIt is the time required for the Collector current to fall from 90 to 10

percentage of Ics.24. Define Storage time

It is the time required to fall from 100 to 90 percent of Ics.25. Define turn-off timeIt is the time required to fall from 100 to 90 percent of Ics.

Toff=ts+tr26 . Define hybrid parameters.Any linear circuit having input and output terminals can be

analysed by four parameters(one measured on ohm, one in mho

and two dimensionless) called hybrid or h-parameters.27. What are the use of h - Parameters?

It perfectly isolates the input and output circuits. Its source and

load currents are taken into account.28 . Define power transistorsPower transistors are those which handle a large amount of

current and also dissipates large amount of power across

collector base junction.

29 . Define current amplification factor in CC transistor.g =Change in emitter current /Change in base current at

constant VCE30. Which is the most commonly used transistor configuration?

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Why?The CE Configuration is most commonly used. The reasons are

* High Current gain * High voltage gain * High power gain

* Moderate input to output ratio.

31 What are the values of input resistance in CB, CE & CC

ConfigurationCB - Low about 75 CE - Medium About 750 CC - Very high about

75032. Write the voltage and current equation for hybrid parameters.V1 = h11i1 + h12V2 i2 = h21i1 + h22V233. What are the values of h-parameters?h11 = V1/ i1 ; h12 = V1 / v2 ; h21 = i2 / i1 ; h22 = i2 / v234. h parameter is applied to linear circuit : True or False.

True

UNIT - III

FET AND ITS APPLICATIONS

1.

Sketch and explain the basic structure of an N channel junction

field effect transistor.

2.

What are the advantages and disadvantages of JFET over BJT?

3. Why is FET known as a unipolar device?

4. Draw and explain the small signal low frequency model of

JFET.

5. Draw and explain the transfer curve of MOSFET in

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enhancement mode.

6. Distinguish between JFET and MOSFET.

7. How do you protect the MOSFET gate?

8. Describe the various FET parameters.

9. What is a channel?

It is a base like structure which determines the type of FET

10. What are the advantages of FET

* Input impedance is very high. This allow high degree of

isolation between the input & output Circuit.

*Current carriers are not crossing the junctions hence noise is

highly reduced.

* It has a negative temperature Co-efficient of resistance . This

avoids the thermal runaury .

* It has a smaller size, longer life high efficiency.

11.. What are the advantage of MOSFET compared to JFET?

The input impedance of MOSFET is higher than that of JFET

12. What are the two modes of MOSFET?

(a) Depletion mode (b) Enhancement mode

13. Why UJT is called so?

UJT has only one PN junction so it is called as uni junction transistor

14.What are the advantages of SCR and TRIAC?SCR performs rectification, inversion and regulation of power flow

TRIAC is a bidirectional switch and hence it can conduct in both

the direction.

15 Define breakdown voltageThe applied voltage at which the thyristors conducts heavily

without gate voltage.

16 .Define latching current

It is the minimum current required to latch the device from off to ON state

17 .Define holding current

It is defined as the minimum current required to hold the device

into conduction.

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18 .Define turn - on timeIt is the time taken by the SCR to reach to its full conduction

from the time the trigger is applied.

19 .Define turn - off time

It is the finite time taken by the SCR after application of the

reverse voltage to switch the device off.20 . What are the advantage of SCR?Switching speed is high No moving parts. So it gives noiseless

operation at high frequency It controls large current in the load

by means of small gate current Occupies less space

21 . Give some applications of thysistor?Used for power control Used for speed control of a d.c shunt

motor

22 . Define finger voltageIt is defined as the minimum voltage which is required between

anode and the cathode of thyristor to trigger into conduction

23. What is the name for solid state equivalent of thyristor

Thyratron.

24. .Define inter-base resistance

It is the resistnce offered by the silicon bar

25 . Define pinch-off voltageIt is the drain source voltge above which the drain current become

constant

26. . What are the differences between JFET & BJT

jFET BJT1. Unipolar device 1. Bipolar device2. High input impedance 2. Low input impedance due

to forward bias

3. Voltage driven device 3. Current driven device4. Gain is characterised

by transconductance 4. Gain is chracterised by voltge gain5. Low noise level 5. High noise level

27. . What is amplification factorIt is the product of drain resistnce and transconductance

m=Rd x gm Rd=Drain resistnce gm=Transconductance

28. Define drain resistanceIt is the ratio of change in drain source voltage to change in drain current at

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constant gate source voltage.

UNIT - IV

AMPLIFIERS AND OSCILLATORS

1. What is a single tuned amplifier?

2. What are the disadvantages of tuned amplifiers?

3. What are double tuned amplifiers?

4. What are the advantages of stagger tuned amplifier?

5 What is feed back?

6. What are feed back amplifiers?

7. What are the types of feed back?

8. What is negative feed back?

9. What is positive feedback?

10. Which feedback increases the gain of the amplifier?

11. State Barkhausen criterion.

12. Give the classification of oscillators.

13. Define feedback factor .

14. Draw the schematic representation of Hartley oscillator.

15. In Hartley oscillator calculate L2 if L1 = 15mh ,C=50pF

mutual inductance of 5H and frequency of oscillations is 168 KHz.

16. Compare the frequency response characteristics of an amplifier with and

Without Feedback.

17.What is the condition for the sustained oscillation?

18. Draw the colpitt oscillator

19. Why is RC phase shift oscillator is preferred for the generation of low

Frequency ? Derive the frequency of oscillation for the same.

20 Explain in detail

( i ) Voltage-shunt feedback amplifier

(ii ) current series feedback amplifier

21. What are the conditions for sustained oscillator or what is Barkhausen criterion?

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22. State the frequency for RC phase shift oscillator.

UNIT - V

PULSE CIRCUITS

1. What do you understand by wave shaping circuits?

2. Which elements are used in linear and non-linear wave shaping circuits?

3. Why there is need of wave shaping circuits?

4. What do you mean by differentiator circuits?

5. What do you mean by integrator circuits?

6. What do you mean by clipping circuits?

7. What do you mean by clamping circuits?

8 . What do you mean by positive clipper circuits?

9. What do you mean by negative clipper circuits?

10. hat do you mean by positive clamping circuits?

11. What do you mean by negative clamping circuits?

12. Sketch the output waveforms from a differentiating circuit

13. when the input is a saw-tooth wave.

14. Sketch the output waveforms from a differentiating circuit

when the input is a square wave.

15. Mention the advantages of oscillator.

16 . With a neat diagram explain the action of phase shift oscillator.

17.Explain the concept of multivibrator.