3DIC and the Hybrid Memory Cube - SEMI.ORG Global Summit 3DIC... · 3DIC and the Hybrid Memory Cube...
Transcript of 3DIC and the Hybrid Memory Cube - SEMI.ORG Global Summit 3DIC... · 3DIC and the Hybrid Memory Cube...
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©2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.
1 ©2012 Micron Technology, Inc. |
Dean Klein
Micron Technology, Inc.
3DIC and the Hybrid Memory Cube
September 4, 2013
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2 ©2012 Micron Technology, Inc. |
The Need: Break Down the Memory Wall
September 4, 2013
2 Channel
3 Channel
4 Channel
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3 ©2012 Micron Technology, Inc. |
Reducing System Cost
September 4, 2013
2 Channel
3 Channel
4 Channel
Socket 423
LGA2011
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4 ©2012 Micron Technology, Inc. |
Managing System Complexity
September 4, 2013
DDR
85 page specification 1 page of AC timing params 3 speed bins Standardization Time: < 3 yrs years
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5 ©2012 Micron Technology, Inc. |
Managing System Complexity
September 4, 2013
DDR
85 page specification 1 page of AC timing params 3 speed bins Standardization Time: < 3 yrs years
DDR4 214 page specification 9 pages of AC timing params 12 speed bins for BOL (to 2400) Standardized Time: >6 years and going
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6 | ©2012 Micron Technology, Inc. |
Hybrid Memory Cube (HMC)
September 4, 2013
Fast process logic and advanced DRAM design in one optimized package
▶ Power Efficient
▶ Smaller Footprint
▶ Increased Bandwidth
▶ Reduced Latency
▶ Lower TCO
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7 ©2012 Micron Technology, Inc. |
Enabling Technologies
September 4, 2013
Memory Vaults Versus DRAM Arrays • Significantly improved bandwidth, quality and
reliability versus traditional DRAM technologies
Logic Base Controller • Reduced memory complexity and significantly
increased performance • Allows memory to scale with CPU performance
Abstracted Memory Management
Through-Silicon Via (TSV) Assembly
Innovative Design & Process Flow • Incorporation of thousands of TSV sites per die
reduces signal lengths and reduces power • Enables memory scalability through parallelism
Sophisticated Package Assembly • Higher component density and significantly
improved signal integrity
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8 | ©2012 Micron Technology, Inc. |
HMC Architecture
DRAM
Start with a clean slate
September 4, 2013
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9 | ©2012 Micron Technology, Inc. |
HMC Architecture
DRAM
Re-partition the DRAM and strip away the
common logic
September 4, 2013
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10 | ©2012 Micron Technology, Inc. |
DRAM
Stack multiple DRAMs
HMC Architecture
September 4, 2013
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11 | ©2012 Micron Technology, Inc. |
DRAM
Vault
3DI & TSV Technology
DRAM0
DRAM1
DRAM2
DRAM3
DRAM4
DRAM5
DRAM6
DRAM7
Logic Chip
Re-insert common logic on to the Logic Base die
HMC Architecture
Logic Base
September 4, 2013
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12 | ©2012 Micron Technology, Inc. |
HMC Architecture
Vaults are managed to maximize overall device availability
• Optimized management of energy and refresh
• Self test, error detection, correction, and repair in the logic base layer
3DI & TSV Technology
DRAM0
DRAM1
DRAM2
DRAM3
DRAM4
DRAM5
DRAM6
DRAM7
Logic Chip
Logic Base • Multiple high-speed local buses for data movement • Advanced memory controller functions • DRAM control at memory rather than
distant host controller • Reduced memory controller complexity
and increased efficiency
DRAM
Logic Base
Vault
Memory Control
Vault Control
DRAM Sequencer
Crossbar Switch
Write Buffer
Read Buffer
Refresh Controller R
equest
Write
Data
Read D
ata
DRAM Repair
TSV Repair
Detail of memory interface
September 4, 2013
Vault Control Vault Control Vault Control
Memory Control
Crossbar Switch
Link Interface Controller
Link Interface Controller
Processor Links
Link Interface Controller
Link Interface Controller
Logic Base
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HMC Architecture Link Controller Interface
RX
TX
Host
TX
RX
HMC
16 Lanes
16 Lanes
8 or 16 Transmit Lanes
8 or 16 Receive Lanes
September 4, 2013
Example:
HMC-SR Options: 10 Gpbs, 12.5 Gbps or 15 Gbps
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14 | ©2012 Micron Technology, Inc. |
Host Processor Memory Management
September 4, 2013
HOST
DRAM Layer
DRAM Layer
DRAM Layer
DRAM Layer
TSV
TSV
TSV
TSV
TSV
TSV
TSV
TSV
Re-drive Layer
Si Interposer
Manufacturing Test • Burn-in • At-speed Functional
Manage field maintenance and self test
Manage all present and future DRAM scaling and process variation issues
Manage 100+ different DRAM timing parameters
Non-managed DRAM (WIO, HBM, etc.)
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15 | ©2012 Micron Technology, Inc. |
Host Processor Memory Management
September 4, 2013
HOST
DRAM Layer
DRAM Layer
DRAM Layer
DRAM Layer
TSV
TSV
TSV
TSV
TSV
TSV
TSV
TSV
Re-drive Layer
Si Interposer
Manufacturing Test • Burn-in • At-speed Functional
Manage field maintenance and self test
Manage all present and future DRAM scaling and process variation issues
Manage 100+ different DRAM timing parameters
Simple memory requests and responses. No
DRAM timing to manage
Functions moved to HMC for management
Non-managed DRAM (WIO, HBM, etc.)
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16 | ©2012 Micron Technology, Inc. | September 4, 2013
The Package
Standard BGA Packaging Solutions: Cost Effective Packaging using existing Ecosystems
Up to 1.28 Tbps Memory Bandwidth!
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17 | ©2012 Micron Technology, Inc. |
HMC Near Memory
▶ All links between host CPU and HMC logic layer
September 4, 2013
▶ Maximum bandwidth per GB capacity
HPC/Server – CPU/GPU
Graphics
Networking systems
Test equipment
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18 | ©2012 Micron Technology, Inc. |
HMC “Far” Memory
• Far memory
▶ Some HMC links connect to host, some to other cubes
▶ Scalable to meet system requirements
▶ Can be in module form or soldered-down
• Future interfaces may include
▶ Higher speed electrical (SERDES)
▶ Optical
▶ Whatever the most appropriate interface for the job!
September 4, 2013
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19 | ©2012 Micron Technology, Inc. |
HMC Reliability
▶ Built-In RAS features at a high level...
Logic / Interface
DRAM Array
Logic / Interface
DRAM Array
Logic / Interface
DRAM Array
Logic / Interface
DRAM Array
Host
Vault Data ECC protected
Address / Command Parity for Array
transactions
CRC Protection on Link Interface
Link Retry
Logic Stability (DRAM controls in logic)
Reliable handshake (packet integrity verified before memory access)
September 4, 2013
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20 | ©2012 Micron Technology, Inc. |
RAS Feature System Comparison FEATURE DRAM RDIMM HMC
Extensive Test Flow
Data ECC
Address/Command Parity
Mirroring (back-up memory)
Sparing (Chipkill)
Lockstep (redundancy w/better ECC)
CRC Coding
Self Repair
BIST
Error Status and Debug Registers
DIMM Isolation (flags faulty DIMM)
Memory Scrubbing
Supported Redundant or not needed
September 4, 2013
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21 | ©2012 Micron Technology, Inc. |
Technology Comparison (Extreme Performance)
September 4, 2013
• What does it take to support 1.28TB/s of performance?
• Comparison of HMC to DDR3L-1600 and DDR4-3200
Active Signals DDR3 requires ~14,300 DDR4 requires ~7,400 HMC only needs ~2,160, HMC is ~85% less than DDR3
$ $ $ $ $ $ $ $
$ $ $ $ $ $ $ $
$ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $
Operating Power (including CPU’s) DDR3 system requires ~2.25KW DDR4 system requires ~1.23KW HMC system only needs ~350W, HMC is ~72% less than DDR4
Board Space DDR3 requires ~165,000 sq mm DDR4 requires ~82,500 sq mm HMC only needs ~8,712 sq mm, HMC is ~90% less than DDR4
Assumptions: 1DPC, (SR x4) RDIMMs, 6.2W/channel for DDR3 @ 12.8GB/s, 8.4W/channel for DDR4 @ 25.6GB/s 5W per Link for HMC @ 160GB/s, 143 pins/channel for DDR3, 148 pins for DDR4 , 270 per HMC, RDIMM area equals 10mm pitch x 165mm long, HMC w/keep outs equal 1089 sq mm, CPU for RDIMMS = 65W, CPU for HMC = 95W, each CPU supports up to 4 channels.
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22 | ©2012 Micron Technology, Inc. |
Technology Comparison (Single Link)
September 4, 2013
• What does it take to support 60GB/s of performance?
• Comparison of HMC to DDR3L-1600 and DDR4-3200
Assumptions: Same as previous example of 1.28TB/s Bandwidth
Channels DDR3 requires 5 channels DDR4 requires 3 channels HMC only needs 1 Link
Active Pins DDR3 requires 670 pins DDR4 requires 345 pins HMC only needs 72 pins
Board Area DDR3 requires ~7,734 sq mm DDR4 requires ~3,843 sq mm HMC only needs ~1,089 sq mm
BW/pin DDR3 ~90MB/pin DDR4 ~174MB/pin HMC ~833MB/pin
DDR3 DDR4
DDR3 DDR4
DDR3 DDR4
DDR4
HMC
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23 ©2012 Micron Technology, Inc. |
Packet Buffer Memory Subsystem Comparison
▶ Packet Buffer Requirements & Assumptions
4 100GbE ports per Network Processor / Traffic Manager
Packet buffering on ingress or egress
Maintain 800Gbps effective bandwidth across all packet sizes at each packet buffer
September 4, 2013
100GbE
100GbE
100GbE
100GbE
Ingress or Egress Packet Buffer
Stats Table
Lookups
Network Processor / Traffic Manager
Queue Mgmt
Sw
itch
Fabric
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24 ©2012 Micron Technology, Inc. |
400Gbps Packet Buffer Comparison
September 4, 2013
Network Processor
Network Processor
Parameter DDR4-2400 x16 4 HMC-15G-SR Links
# of Memory Devices
48 1
Total # of Pins
1848 276
Power: Host PHY+ Memory
56W 33W
Memory Surface Area
6048mm2 961mm2
Host PHY Silicon Surface Area1
1.75x 1x
84% smaller memory footprint
75% smaller host PHY
85% fewer pins
41% lower power
HMC System Level Savings
All devices drawn to scale
1. Relative sizes represented
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25 | ©2012 Micron Technology, Inc. |
Broad Adoption & Momentum
Accel, Ltd Fujitsu Limited Luxtera Inc. Pico Computing
ADATA Technology Co., LTD Galaxy Computer System Co., Ltd. Marvell Renesas Electronics Corporation
AIRBUS GDA Technologies Mattozetta Technologies Science & Technology Innovations
Altior GLOBALFOUNDRIES Maxeler Technologies Ltd. SEAKR Engineering
APIC Corporation GraphStream Incorporated MediaTek ST Microelectronics
Arira Design HGST, a Western Digital Company Memoir Systems Inc. Suitcase TV Ltd
Arnold&Richter Cine Technik HiSilicon Technologies Co., Ltd Mentor Graphics Tabula
Atria Logic, Inc. HOY Technologies Miranda Tech-Trek
BroadPak Huawei Technologies Mobiveil, Inc. Teradyne, Inc
Cadence Design Systems, Inc. Infinera Corporation Montage Technology, Inc. The Regents of the University of California
Convey Computer Corporation Information Sciences Institute USC Napatech A/S Tilera Corporation
Cray Inc. Inphi National Instruments Tongji University
DAVE Srl ISI/Nallatech NEC corpration T-Platforms
Design Magnitude Inc. Israel Institute of Technology Netronome TU Kaiserslautern
Dream Chip Technologies GmbH Juniper Networks New Global Technology UC, Irvine
Engineering Physics Center of MSU Kool Chip Northwest Logic UMC
eSilicon Corporation Korea Advanced Institute of Science Obsidian Research University of Heidelberg ZITI
Exablade Corporation Lawrence Livermore National Laboratory OmniPhy University of Rochester
Ezchip Semiconductor LeCroy Corporation Oregon Synthesis Winbond Electronics Corporation
FormFactor Inc. LogicLink Design, Inc. Perfcraft Woodward McCoach, Inc.
ZTE Corporation
Over 110 Adopters to date!
http://www.hybridmemorycube.org 1.0 Specification released April 2013
September 4, 2013
Over 120 Adopters!
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26 | ©2012 Micron Technology, Inc. |
A Robust Ecosystem
OEM’s Enablers Tools
September 4, 2013
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“…wicked fast” - gigaom.com
“…a complete paradigm shift” - extremetech.com
“…like adding a turbocharger to your computer” - datacenteracceleration.com
“…unprecedented levels of memory performance”
- Electronic News “…an entirely new category of memory” - Tom’s Hardware
Industry Validation
EE Times 40th Anniversary: “one of the top ten technologies expected to redefine the industry”
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▶ Improved costs – at a system and TCO level
▶ When the need exists, the ecosystem develops.
▶ There are no competing technologies…
HMC 3DIC – The Bottom Line
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▶ Improved costs – at a system and TCO level
▶ When the need exists, the ecosystem develops.
▶ There are no competing technologies… There are no universal solutions
HMC 3DIC – The Bottom Line
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