3D Integration for MEMS Devices - invensas.com · [email protected] 3025 Orchard Parkway San Jose,...
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Transcript of 3D Integration for MEMS Devices - invensas.com · [email protected] 3025 Orchard Parkway San Jose,...
3025 Orchard Parkway San Jose, CA 95134 +1 408.321.6000
MEMS devices often require a vacuum or pressurized cavity structure surrounding the sensing elements. The integrity and hermeticity, of the
bond layers between the cavity structure, the MEMS device and the associated logic device is critical to the proper function of the integrated product. Currently,
the industry employs a variety of techniques such as eutectic, anodic, thermo-compression, and glass frit bonding. All of these techniques require long
duration processing at high temperatures, leading to constraints on materials selection, lower process throughput and ultimately higher overall cost.
ZiBond and Direct Bond Interconnect (DBI) are low temperature bonding technologies that deliver the high
hermeticity bond interfaces required for MEMS production, with higher throughput and lower process cost compared to traditional bonding techniques.
• Multi-functional 3D Integration
• Wafer level bonding at room temp
• High hermeticity
• Smaller footprint - eliminates wire-bond
• Higher bonding yield and throughput
• Reduces defects
Key Benefits
MEMS Device with ZiBond® Bonding & DBI® 3D Interconnect
Small, Reliable and Cost Effective Multi-Functional Integrated Solution
Accelerometer
Microphone
Gyroscope
Temperature Sensor
Magnetometer
Relative Humidity Sensor
Pressure Sensor
Gas Sensor
Create the new generation of MEMS devices with world class wafer bonding and 3D interconnect technologies from Invensas
3D Integration for MEMS Devices
MEMS Structure
Bond Pad
Dialectric
DBI Interconnect
CreatesHermetic Seal MEMS-CMOS
DBI Interconnect Thru Silicon Via (TSV)
Vacuum-Sealed Cavity
MEMS Wafer
CMOS IC Wafer
Si Cap Wafer ZiBond (Dielectric)
Dielectric
SemiconductorTechnologies
3025 Orchard Parkway San Jose, CA 95134 +1 408.321.6000
Direct Bond Interconnect (DBI) technology is a low temperature
hybrid direct bonding solution that allows wafers or die to be
bonded with exceptionally fine pitch 3D electrical interconnect.
DBI can also minimize the need for Thru Silicon Vias (TSVs).
DBI technology is in high volume production today.
DBIProcess
ZiBond Process
HomogeneousDirect Bonding
Hybrid Bonding withMetal Interconnect
Chemical MechanicalPolishing
Chemical MechanicalPolishing
Align & Contact withoutExternal Pressure
Align & Contact withoutExternal Pressure
Plasma
LOW
TEMP
BATC
H AN
NEAL
ACTIV
ATIO
NW
AFER
CMP
ROOM
TEMP
BOND
ING
Silicon Wafer
Dielectric
Plasma
Silicon Wafer
Silicon WaferVery Thin Dielectric
Metal
Silicon Wafer
Silicon Wafer
Silicon Wafer
Dielectric
Silicon
Silicon DielectricInterconnect
Silicon
Silicon
3D Interconnect Metals
Cu, Ni
Same as ZiBond
Room Temperature
3D Interconnect Pitch
Bond Interface Materials
Substrates
Scalable to <1µm pitch1.6µm demonstrated6µm in high volume production
Same dielectrics as ZiBond with integrated metal interconnect
Bonding Temperature
Anneal Temperature
Equipment Industry standard wafer alignment and bonding equipment
150 -300ºC (application dependent)
75-300ºC (application dependent)
Bond Interface Materials
Substrates
BondingTemperature
SiO(TEOS, Thermal, Silane)
SiN(CVD or PECVD)
SiON(PECVD)
Room Temperature
Si, Glass, InP, GaAs, GaN, SiC, LiTaO3, LiNbO3, Sapphire
SiCN(PECVD)
Anneal Temperature
ZiBond technology is a low temperature homogeneous direct
bonding solution that forms a strong bond between wafers or die
with the same or different coefficients of thermal expansion (CTE).
ZiBond technology is in high volume production today.
Equipment
ZiBond Technology
DBI Technology
Industry standard wafer alignment and bonding equipment
Metal Bond Pad
Very Thin Dielectric
Interconnect
Features
Features