300mm Wafer Development and Manufacturing in China

Zing Semiconductor Corporation Confidential1

Zing Semiconductor Corporation Confidential

300mm Wafer Development and Manufacturing in China

Richard Chang – CEO, Zing Semiconductor

2016/11/9


Forecast for Global Semiconductor Market

Beginning in 2004, China surpassed the U.S. as the largest semiconductor market in the world. In 2010, Chinese demand for semiconductors accounted for half of the world total. In 2016, around 60%. In 2020, Chinese demand alone will be up to 70%. But even as the largest IC consumer, China has limited capacity for IC production. However, the Chinese government hopes that by 2025, the self-sufficiency rate of domestic IC can reach at least 50%.

Source: IBS


SOURCE:IBS

China Semiconductor Consumption vs.Supply from Domestic Suppliers


Source: IBS

In 2010 China's foundry market accounted for 7.8% of the world total. By 2025, it will increase to 26.4%.

Forecast for the China Foundry Market


In 2009, 300mm silicon wafer became the mainstream market. It’s expected that in 2020, the demand on 300mm silicon wafer will account for more than 75% of the total.

Most of the newly planned domestic foundries are 300mm wafer production lines.

Global Silicon Wafer Market Outlook

SEMI Forecast


Global 300mm Silicon Wafer Supplier List

Source: Gartner, Semi

SAS3.3% SunEdison

11.1%

Wacker Siltronic12.2%

LG Siltron15.6%

SUMCO27.8%

Shin-Etsu27.8%

Others2.2%


Forecast: 300mm Wafer Demand


Eight In Operation 300mm Wafer Production Lines in China

The total domestic demand for 300mm wafers currently is about 414k/month.

Company Location Type

Monthly Production(300mm wafers)

Samsung Xi’an 3D NAND 100,000Intel Dalian 3D NAND, 3D

XPoint40,000

SK Hynix Wuxi DRAM 145,000Huali Shanghai Foundry 35,000SMIC Beijing 1 Foundry 36,000SMIC Beijing 2 Foundry 18,000SMIC Shanghai Foundry 15,000XMC Wuhan NOR, NAND,

CMOS25,000

Source: CSF



Eight under Construction 300mm Wafer Production Line of China

By 2020, the total 300mm demand in China could exceed 1000k wpm.

Company Location TypeMonthly Production(300mm wafers)

XMC Wuhan 3D NAND/DRAM 300,000 (2020)

Global Foundries Chongqing Foundry 2017 ProductionLeadcore Xiamen Foundry Initial production

of 6,000 wpmJHICC Jinjiang DRAM 60,000 (2018)Sino King Hefei DRAM 10,000Jing He Hefei LCD Drivers Initial production

of 40,000 wpmTSMC Nanjing Foundry 20,000DeKeMa Huaian CIS, CMOS 20,000


The Semiconductor Industry Value Chain


300mm Silicon Wafer Development History in China

• In 1957, professor Lin Lanying, at the Chinese Academy of Sciences (CAS, 中国科学院）succeeded in growing the first mono-crystal germanium ingot in China by Czochralski (CZ) method;

• In 1958, Dr. Lin successfully grew the first 50mm mono-crystal silicon ingot in China by CZ method;

• In 1962, Dr. Lin designed and built the first domestic mono-crystalline furnace, and in the same year, grew the first Chinese gallium arsenide crystal.



• In 1980, Zhejiang University began the systematic study of nitrogen doping CZ silicon mono-crystal growing process and crystal characterization.

• In 1998, the General Research Institute for Nonferrous Metals (GRINM, 北京有研总院) successfully grew the first 300mm mono-crystal silicon ingot in China by CZ method;

• In 2001, GRINM set up the Chinese first 200mm silicon wafer production line;• In 2010, Shanghai Simgui (新傲科技） announced the mass production of 200mm

SOI/EPI wafers;• In 2011, Tianjin Zhonghuan Semiconductor (天津中环半导体) successfully grew

the first Chinese 200mm silicon mono-crystal ingot by floating-zone (FZ) method.



• Until now, no Chinese 300mm silicon wafers have been qualified for semiconductor product application, but only used as dummy and/or test wafers.

• But in October 2016, Zing Semiconductor Corporation (上海新昇半导体）successfully grew its first 300mm mono-crystal silicon ingot. On November 1, it began growth of its first ingot using the magnetic Czochralski (MCZ) method with high quality and high productivity (>430Kg). Zing has also begun pilot production of 300mm polished wafers and EPI wafers.

• Zing Semiconductor Corporation has developed a privileged deuterium doping technology which can be used for crystal growth, wafer annealing, epitaxy and even for SOI wafer manufacturing.


Zing’s first 300mm ingot


Zing Semiconductor Corporation


Founded in June 2014Address: 1000 Yunshui Road, Pudong New Area, Shanghai Total built-up area: 128,394m2

Total investment: RMB 6.8 Billion (Phase 1 – Phase 3)

Here we are!46km

Zing Semiconductor Corporation


Capacity and Technology Road Map

Phase 1Technology Node：28nmCapacity：150K 300mm wafers per month

Phase 2Technology Node：20nm~14nmCapacity： 300K 300mm wafers per month

Phase 3Technology Node：10nm and underCapacity: 600K 300mm wafers per month

2017

2019-2020

2021-2022


2016/11

2017/03

System and Product Certification Plan


Certification\ Time2015 2016 2017

11 12 1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12

ISO 9001:2015

ISO 14001:2004

OHSAS 18001:2007

ISO/TS16949:2009

2016/12

2017/09


Zing Semiconductor – Your source for300mm wafers in China

Richard Chang

[email protected]

300mm Wafer Development and Manufacturing in China

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