2sk3262 - 200V,20A
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Transcript of 2sk3262 - 200V,20A
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8/6/2019 2sk3262 - 200V,20A
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Item Symbol Rating Unit
Drain-source voltage VDS 200
Continuous drain current ID 20
Pulsed drain current ID(puls] 80
Gate-source voltage VGS 20
Maximum Avalanche Energy EAV *1 355
Max. power dissipation Ta=25C PD 2
Tc=25C PD 45
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25C unless otherwise specified)
Thermalcharacteristics
2SK3262-01MR FUJI POWER MOS-FETN-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadownLow driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSSVDS=200V
VGS=20V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VCC=100V ID=20A
VGS=10V
RGS=10
Min. Typ. Max. Units
V
V
A
mA
nA
m
S
pF
A
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistanceRth(ch-c) channel to case
Rth(ch-a) channel to ambient
2.78
62.5
C/W
C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25C
VGS=0V Tch=125C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100H Tch=25C
IF=20A VGS=0V Tch=25C
IF=20A VGS=0V
-di/dt=100A/s Tch=25C
V
A
A
V
mJ
W
W
C
C
*1 L=1.6mH, Vcc=24V
200
1.0 1.5 2.0
10 500
0.2 0.5
10 100
110 150
85 100
9.0 19.0
1700 2550
290 435
185 280
10 15
45 70
225 340
120 180
20
0.93 1.40
250
2.90
-55 to +150
TO-220F15
3. Source
2.54
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0 1 2 3 4 50.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID[A]
VGS [V]
Characteristics
2SK3262-01MR FUJI POWER MOSFET
0 50 100 1500
10
20
30
40
50
Power Dissipation
PD=f(Tc)
PD[W]
Tc [C]10
010
110
210
310
-1
100
101
102
ID[A]
VDS [V]
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
t=
1s
10s
1ms
10ms
100ms
100s
D.C.
0 1 2 3 4 5 6
0
10
20
30
40
50
15V
3.5V
3.0V
4.0V
4.5V
10V 5.0V
VGS=20V
Typical output characteristics
ID=f(VDS):80s pulse test,Tc=25C
ID[A]
VDS [V]
10-1
100
101
10210
-1
100
101
102
Typical forward transconductance
gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
gfs[s]
ID [A]
0 10 20 30 40 50 600.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
RDS(on)[]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80s pulse test,Tch=25C
10V
15V
20V
4.0V
4.5V
3.5VVGS=3.0V
5.0V
t
TD=
t
T
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2SK3262-01MR FUJI POWER MOSFET
0 25 50 75 100 125 1500
100
200
300
400
500
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V,IAV