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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A

Drain cut-off current IDSS VDS = 100 V, VGS = 0 V 100 A

Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 2.0 V

VGS = 4 V, ID = 6 A 0.25 0.32Gate-source ON resistance RDS (ON)

VGS = 10 V, ID = 6 A 0.15 0.21

Forward transfer admittance |Yfs| VDS = 10 V, ID = 6 A 4.5 7.7 S

Input capacitance Ciss 1100 pF

Reverse transfer capacitance Crss 210 pF

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

440 pF

Rise time tr 18

Turn-on time ton 30

Fall time tf 18

Switching time

Turn-off time toffDuty 1%, tw = 10 s

65

ns

Total gate charge

(gate-source plus gate-drain)Qg 48 nC

Gate-source charge Qgs 29 nC

Gate-drain (miller) charge Qgd

VDD80 V, VGS = 10 V, ID = 16 A

19 nC

Source-Drain Rating and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)IDR 16 A

Pulse drain reverse current

(Note 1)IDRP 64 A

Forward voltage (diode) VDSF IDR = 16 A, VGS = 0 V 1.7 V

Reverse recovery time trr 160 ns

Reverse recovery charge Qrr

IDR = 16 A, VGS = 0 V

dIDR/dt = 50 A/s 0.5 C

Marking

10 V

0VVGS

RL=6.2

5

VDD50 V

ID = 8AVOUT

50

Lot No.

A line indicateslead (Pb)-free package orlead (Pb)-free finish.

J412 Part No. (or abbreviation code)

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Drain-source voltage VDS (V)

ID VDS

DraincurrentID

(A) 10

00

2

5

2.0

1

3

4

Common source

Tc = 25CPulse test

0.4 1.2 1.6

VGS = 2 V

2.5

34

6

8

0.8

Drain-source voltage VDS (V)

ID VDS

DraincurrentID

(A)

10

00

8

20

104

4

12

16

Common source

Tc = 25C

Pulse test

2 6 8

2.5

3

4.0

6

8

VGS = 2 V

3.5

Gate-source voltage VGS (V)

ID VGS

Draincurrent

ID

(A)

6

00 1 2 3 5 64

2

4

8

10

25

100

Tc = 55C

Common source

VDS = 10 V

Pulse test

Forwardtransferadmittance

|Yfs|

(S)

Drain current ID (A)

|Yfs| ID

Tc = 55C

10025

10.3 2031.0 10

30

10

3

Common source

VDS = 10 V

Pulse test

5

Drain current ID (A)

RDS (ON) ID

Drain-sourceonresistance

RDS(ON)()

0.030.1 201.00.3 10

Common source

Tc = 25C

Pulse test

2.0

1.0

0.1

0.3

3

VGS = 4 V

10

0.05

0.5

Drain-sourcevoltage

VDS

(V)

Gate-source voltage VGS (V)

VDS VGS

00

1.6

0.8

3.2

2.4

4 8 12 16 20

ID = 8 A

4

2

Common source

Tc = 25C

Pulse test

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Gatethresholdvoltage

Vth

(V)

Case temperature Tc (C)

Vth Tc

4

080 1608040 40

1

3

0 120

Common source

VDS = 10 V

ID = 1 mA

Pulse test

2

Gate-sourcevoltage

VGS

(V)

Total gate charge Qg (nC)

Dynamic Input/Output Characteristic

Drain-sourcevoltag

e

VDS

(V)

00

40

100

10040

20

60

80

20 60 80

VDS

VGS

20 V

VDD = 80 V

40 V

0

8

20

4

12

16

Common sourceID = 16 ATc = 25CPulse test

Case temperature Tc (C)

RDS (ON) Tc

Drain-sourceonresistance

RDS(ON)

()

Drain-source voltage VDS

(V)

Capacitance VDS

Capacitance

C

(pF)

Drain-source voltage VDS (V)

IDR VDS

Drainreversecurrent

IDR

(A)

0.30 1.00.80.2

Common source

Tc = 25C

Pulse test

0, 11

VGS = 10 V

0.6

1.0

3

10

30

0.4

23

50.5

5

Drainpowerdissipation

PD

(W)

Case temperature Tc (C)

PD Tc

00 40 80 120 160

20

40

60

80

8

080 1604040 80 120

Common source

Pulse test ID = 8 A

2, 4

2

4

VGS = 4 V

VGS = 10 V

0

0.1

0.2

0.3

0.5

0.4

300.1 100100.3

Crss

3

100

300

3000

1

Coss

Ciss

30

Common source

VGS = 0 V

f = 1 MHz

Tc = 25C

1000

5000

50

500

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TEST CIRCUIT WAVE FORM

IAR

BVDSS

VDD VDS

RG = 25

VDD = 25 V, L = 1.84 mH

=

VB

BLI

2

1

DDVDSS

VDSS2

AS

15V

15V

Avalancheenergy

EAS

(mJ)

Channel temperature Tch (C)

EAS Tch

025

200

500

15075

100

300

400

50 100 125

Drain-source voltage VDS (V)

Safe Operating Area

Draincurrent

ID

(A)

0.11 3 10 30 100 300

0.3

0.5

1

3

5

10

30

50

100

300

0.3

IC max (pulsed)*

*: Single nonrepetitive pulse

Tc = 25C

Curves must be derated

linearly with increase in

temperature.

ID max (continuous)

VDSS max

1 ms*

10 ms*

100 s*

DC operation

Tc = 25C

rth tw

Pulse width tw (s)

Normalizedtransientthermalimpedance

rth(t)/Rth

(ch-c)

100 m10 m0.01

1

1 10

0.3

3

0.03

0.5

0.05

0.1

10 100 1 m

T

PDM

t

Duty = t/T

Rth (ch-c) = 2.08C/W

Duty = 0.5

0.02

0.2

0.1

0.05

Single pulse0.01

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