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Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraftscontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT DisplayHorizontal Deflection Output Applications

Ordering number:ENN2732

2SC3998

SANYO Electric Co.,Ltd. Semiconductor CompanyTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82903TN (KT)/D2598HA (KT)/N158MO, TS No.27321/3

Specifications

Absolute Maximum Ratings at Ta = 25C

Package Dimensionsunit:mm

2048B

[2SC3998]

Features High speed (tf=100ns typ).

High breakdown voltage (VCBO=1500V).

High reliability (adoption of HVP process).

Adoption of MBIT process.

C

C

Electrical Characteristics at Ta = 25C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PBL

Tc=25C

retemaraP lobmyS snoitidnoC sgnitaR tinU

egatloVesaB-ot-rotcelloC V OBC 0051 V

egatloVrettimE-ot-rotcelloC V OEC 008 V

egatloVesaB-ot-rettimE V OBE 6 VtnerruCrotcelloC IC 52 A

)esluP(tnerruCrotcelloC I PC 05 A

noitapissiDrotcelloC PC 052 W

erutarepmeTnoitcnuJ jT 051

erutarepmeTegarotS gtsT 051+ot55

retemaraP lobmyS snoitidnoCsgnitaR

tinUnim pyt xam

tnerruCffotuCrotcelloC I SEC V EC V0051= 0.1 Am

egatloVniatsuSrettimE-ot-rotcelloC V )sus(OEC IC I,Am001= B 0= 008 V

tnerruCffotuCrettimE I OBE V BE I,V4= C 0= 0.1 Am

tnerruCffotuCrotcelloC I OBC V BC I,V008= E 0= 01 A

niaGtnerruCCDh EF 1 V EC I,V5= C A0.1= 8 03

h EF 2 V EC I,V5= C A02= 4 8

egatloVnoitarutaSrettimE-ot-rotcelloC V )tas(EC IC I,A02= B A5= 5 V

egatloVnoitarutaSrettimE-ot-esaB V )tas(EB IC I,A02= B A5= 5.1 V

emiTegarotS t gts IC I,A21= 1B I,A4.2= 2B A8.4= 0.3 s

emiTllaF tf IC I,A21= 1B I,A4.2= 2B A8.4= 2.0 s

20.0

1.2

2.0

3.4

3.3

0.6

5.0

1.

0

2.

0

20.

7

26.

0

1 2 3

5.455.45

2.

8

6.

0

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2SC3998

No.27322/3

Switching Time Test Circuit

VR

RB

200V--2V

+ +

50

INPUTOUTPUT

RL

100F 470F

PW=20s

IB1

D.C.1%IB2

ITR06227

12

18

30

24

6

00 2 4 8 106

IC -- VCE

ITR06226

IB=0

IC -- VBE

hFE -- IC

ITR06229

VCE(sat) -- IC

ITR06228

10

5

3

2

2

2

1.0

0.1

5

3

5

3

28

24

20

16

12

8

4

0

10

57

1.0

5

7

5

2

3

3

2

35 20.1 3 5 1.0 2 3 5 2 3 510

Ta=120

C25

C

--40C

Ta=120C

--40C

25

C

0.15 32 5 32 5 32 51.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2

1A

2A

3A

4A

5A

6A7ATa=120C

25C

--40C

CollectorCurrent,IC

A

Collector-to-Emitter Voltage, VCE V

CollectorCurrent,IC

A

Base-to-Emitter Voltage, VBE V

DCCurrentGain

,hFE

Collector Current, IC A

Collector Current, IC A

Collector-to-Emitter

SaturationVoltage,

VCE(sat)

V

ITR06231

SW Time -- IC10

7

5

3

2

5

3

0.1

2

1.0

7

5 7 1.0 32 5 7 10 532

ITR06230

SW Time -- IB210

0.1

5

3

2

7

1.0

5

3

2

7

5 7 1.0 2 23 5 7 10

VCC=200V

IC=12A

IB1=2.4A

R loadtstg

tf

tstg

tf

IC=5IB1IB2= --2IB1VCC=200V

R load

Collector Current, IC A

SwitchingTime,SWT

ime

s

Base Current, IB2 A

SwitchingTime,SWT

ime

s

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Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

This catalog provides information as of August, 2003. Specifications and information herein are subject to

change without notice.

2SC3998

PS No.27323/3

Reverse Bias A S O

ITR06233

Forward Bias A S O

ITR06232

10

5

3

2

100

5

3

2

5

3

2

1.0

0.1

5

10002 3100 55 7 7 2 3

IB2= --5A

L=100H

Single pulse

Tc=25C

PC -- Ta300

250

200

100

150

50

0

0 20 6040 80 100 120 140 160

ITR06234

10

100

5

3

2

1.0

5

3

2

0.1

5

3

2

0.01

5

3

2

72 3 1005 72 3 100053 5 107

IC=25A

ICP=50A

D

Coperation

10ms

1ms

300s

PC=250W

CollectorCurrent,IC

A

Collector-to-Emitter Voltage, VCE V

CollectorCur

rent,IC

A

Collector-to-Emitter Sustain Voltage, VCEX (sus) V

CollectorDissipation,PC

W

Ambient Temperature, Ta C