2SA1767 BED Discon
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Transistors
1Publication date: January 2003 SJC00030BED
2SA1767Silicon PNP epitaxial planar type
For general amplificationComplementary to 2SC1473A
Features High collector-emitter voltage (Base open) V CEO
Absolute Maximum Ratings Ta = 25C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V CBO 300 V
Collector-emitter voltage (Base open) V CEO 300 V
Emitter-base voltage (Collector open) V EBO 5 V
Collector current I C 70 mA
Peak collector current I CP 100 mA
Collector power dissipation P C 750 mW
Junction temperature T j 150 C
Storage temperature T stg 55 to +150 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V CEO IC = 100 A, I B = 0 300 V
Emitter-base voltage (Collector open) V EBO IE = 1 A, I C = 0 5 V
Forward current transfer ratio * hFE VCE = 10 V, I C = 5 mA 30 150
Collector-emitter saturation voltage V CE(sat) IC = 10 mA, I B = 1 mA 0.6 V
Transition frequency f T VCB = 10 V, I E = 10 mA, f = 200 MHz 50 MHz
Collector output capacitance Cob
VCB
= 10 V, IE = 0, f = 1 MHz 7 pF
(Common base, input open circuited)
Electrical Characteristics Ta = 25C 3C
Unit: mm
5.0 0.2
0.7 0.1
0.45 +0.150.1
2.5 +0.60.2
0.45 +0.150.1
2.5
1 2 3
+0.60.2
4.0 0.2
5 . 1
0
. 2
1 2
. 9 0
. 5
2 . 3
0
. 2
0 . 7
0
. 2
1: Emitter2: Collector3: Base
TO-92-B1 Package
Rank P Q
hFE 30 to 100 60 to 150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
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2SA1767
2 SJC00030BED
VCE(sat) IC hFE IC f T IE
PC Ta IC VCE IC VBE
Cob VCB ICEO Ta
0 16040 12080 14020 100600
1000
800
600
400
200
C o l
l e c t o r p o w e r
d i s s
i p a t i o n
P C ( m W )
Ambient temperature T a ( C)
0 12 10 8 2 6 40
100
80
60
40
20
Ta = 25 C
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
IB = 1.0 mA
C o l
l e c t o r c u r r e n
t I C
( m A )
Collector-emitter voltage V CE (V)
0 2.0 1.6 0.4 1.2 0.80
120
100
80
60
40
20
VCE = 10 V
Ta = 75 C 25 C
25 C
Base-emitter voltage V BE (V)
C o l
l e c t o r c u r r e n
t I C
( m A )
0.1 1 10 100 0.01
0.1
1
10
100 IC / IB = 10
Ta = 75 C25 C
25 C
C o l
l e c t o r - e m
i t t e r s a
t u r a
t i o n v o
l t a g e
V C E ( s a t
) ( V )
Collector current I C (mA)
0.1 1 10 1000
300
250
200
150
100
50
VCE = 10 V
Ta = 75 C
25 C
25 C
F o r w a r
d c u r r e n
t t r a n s
f e r r a
t i o h F
E
Collector current I C (mA )
0.1 1 10 1000
120
100
80
60
40
20
VCB = 10 VTa = 25 C
T r a n s
i t i o n
f r e q u e n c y
f T ( M H z )
Emitter current I E (mA )
1 10 1000
20
16
12
8
4
IE = 0f = 1 MHzTa = 25 C
Collector-base voltage VCB
(V)
C o l
l e c t o r o u
t p u t c a p a c i
t a n c e
( C o m m o n
b a s e , i
n p u t o p e n c i r c u i
t e d )
C o b
( p F )
0 24020016040 120801
10
100
1000
10000 VCE = 120 V
Ambient temperature T a ( C)
I C E O
( T a )
I C E O
( T a
= 2
5 C )
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Request for your special attention and precautions in using the technical information andsemiconductors described in this book
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