23rd International Conference on Amorphous and ... · A4 Contents (A) Page 525-529 Paula C. P....

Proceedings

Editor-in-Chief

Martin Stutzmann, Garching

Regional Editors

Martin S. Brandt, Garching

Manlia J. Caldas, Sao Paulo

Chun-Sing Lee, Hong Kong

Pablo Ordejon, Barcelona

Michael S. Shur, Troy

Managing Editor

Stefan Hildebrandt, Berlin

23rd International Conference on

Amorphous and Nanocrystalline Semiconductors

Utrecht, The Netherlands

23-28 August 2009

Guest Editors

Ruud E. I. Schropp (Utrecht University), Miro Zeman (Delft University of Technology),

Jatindra K. Rath (Utrecht University), and Guy J. Adriaenssens (University of Leuven)

®WILEY-VCH

Contents

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liUerScience*DISCOVER SOMETHING GREAT

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Page A26-A27

Page A28-A31

Page A33-A38.

Preface

Committees and Sponsors

Author Index

The Mott lecture, plenary keynotes, and special commemorative session

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Sir Nevill F. Mott Lecture Award

Sigurd Wagner {keynote)

Amorphous silicon: Vehicle and test bed for iarge-area electronics

J. Hegedus and S. R. Elliott (keynote)

Computer-simulation design of new phase-change memory materials

E. A. Davis (invited)

Walter E Spear: A Tribute

Steve Reynolds, Charles Main, Vladimir Smirnov, and Amjad Meftah

Intensity dependence of quantum efficiency and photo-gating effects

in thin film silicon solar cells

M. Popescu, A. Velea, F. Sava, A. L6rinczi, A. Tomescu, C Simion, E. Matei, 6. Socol,

I. N. Mihailescu, A. Andonie, and I. Stamatin

Structure and properties of silver doped SnSe2 and Ge2Sb2Te5 thin films

prepared by pulsed laser deposition

R. Lukcics and S. Kugler

Photoinduced volume changes in obliquely deposited a-Se

Growth and preparation of silicon films and nanostructures

(A) Page 521 -524 Chisato Niikura and Akihisa Matsuda

Growth of stable amorphous silicon films by gas-flow-controlled RF

plasma-enhanced chemical vapor deposition

(C) Page 509-512

k

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A4 Contents

(A) Page 525-529 Paula C. P. Bronsveld, Tomas Mates, Antonin Fejfar, Jan Kofka, Jatindra K. Rath,

and Ruud E. I. Schropp

High hydrogen dilution and low substrate temperature cause columnar

growth of hydrogenated amorphous silicon

(A) Page 530-534 Arjan Verkerk, Jatindra K. Rath, and Ruud Schropp

High deposition rate nanocrystalline silicon with enhanced

homogeneity

(A) Page 535-538 Kimihiko Saito and Michio Kondo

Investigation of crystalline orientation factor in microcrystalline silicon

thin film deposition

(C) Page 513-516 Baojie Yan, Chun-Sheng Jiang, Yanfa Yan, Laura Sivec, Jeffrey Yang, Subhendu Guha,

and M. M. Al-Jassim

Effect of hydrogen dilution profiling on the microscopic structure

of amorphous and nanocrystalline silicon mixed-phase solar cells

(A) Page 539-543 Barzin Bahardoust, Alongkarn Chutinan, Keith Leong, Adel B. Gougam, Davit Yeghikyan,Tome Kosteski, Nazir P. Kherani, and Stefan Zukotynski

Passivation study of the amorphous-crystalline silicon interface formed

using DC saddle-field glow discharge

(C) Page 517-520 Laurent Kroely, Sanjay K. Ram, Pavel Bulkin, and Pere Roca i Cabarrocas

Microcrystalline silicon films and solar cells deposited at high rate

by Matrix Distributed Electron Cyclotron Resonance (MDECR) plasma

(C) Page 521 -524 Yasushi Sobajima, Takuya Higuchi, Jakapan Chantana, Toshihiko Toyama, Chitose Sada,

Akihisa Matsuda, and Hiroaki Okamoto

Gas-temperature control in VHF-PECVD process for high-rate

(>5 nm/s) growth of microcrystalline silicon thin films

(C) Page 525-528 Tobias Sontheimer, Christiane Becker, Stefan Gall, and Bernd Rech

Crystal nucleation in electron-beam evaporated amorphous silicon

on ZnO:AI- and SiN-coated glass for thin film solar cells

(C) Page 529-532 Alexey Abramov and Pere Roca i Cabarrocas

Addition of SiF4 to standard SiH4+H2 plasma: an effective way

to reduce oxygen contamination in uc-Si:H films

(C) Page 533-536 Fengzhen Liu, Chaowei Li, Meifang Zhu, Jinhua Gu, and Yuqin Zhou

Kinetic roughening and mound surface growthin microcrystalline silicon thin films

(C) Page 537-540 Yanhong Ma, Fengzhen Liu, Meifang Zhu, and Zhanjun Zhang

Aligned microcrystalline silicon nanorods preparedby glancing angle hotwire chemical vapor depositionfor photovoltaic applications

© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-c.com

Phys. Status Solidi C 7, No. 3-4 (2010) A5

(C) Page 541-544 X. D. Zhang, H. Zhang, Q. Yue, C. C. Wei, J. Sun, G. F. Hou, S. Z. Xiong, X. H. Geng,and Y. Zhao

A new method used to control the structure

of high rate microcrystalline silicon thin films

(C) Page 545-548 K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, and K. Yasutake

Characterization of microcrystalline Si films depositedat low temperatures with high rates

by atmospheric-pressure plasma CVD

(C) Page 549-552 Yasuhiro Yamauchi, Tomoyoshi Baba, Tsukasa Yamane, Yoshiaki Takeuchi, Hiromu Takatsuka,

Hiroshi Muta, Kiichiro Uchino, and Yoshinobu Kawai

Dominant ion species in VHF SiH4/H2 plasma

(C) Page 553-556 Sanjay K. Ram, Laurent Kroely, Samir Kasouit, Pavel Bulkin, and Pere Roca i Cabarrocas

Plasma emission diagnostics during fast depositionof microcrystalline silicon thin films in matrix distributed electron

cyclotron resonance plasma CVD system

(C) Page 557-560 W. Beyer, R. Carius, F. Einsele, D. Lennartz, L. Niessen, and F. Pennartz

Highly conductive boron-doped hydrogenated microcrystalline silicon

films obtained by hot wire deposition

(C) Page 561-564 Aimer Brighet, Kamel Mokkadem, Abdelkarim Fedala, and Mohamed Kechouane

Effect of plasma power on properties of a-SiC: H films deposited

by DC magnetron sputtering

(C) Page 565-570 A. Belfedal, Y. Bouizem, D. Benlakehal, R. Baghdad, J. D. Sib, A, Kebab, L. Chahed,

and K. Zellama

Structural properties of intrinsic and doped nc-Si: H films prepared

by RFMS: Study as function of deposition time

and substrate temperature

(C) Page 571-574 M, A. Wank, A. Illiberi, F. D. Tichelaar, R. A. C. M. M. van Swaaij, M. C. M. van de Sanden,

and M. Zeman

Influence of hydrogen dilution on surface roughness developmentof a-Si:H thin films grown by remote plasma deposition

(C) Page 575-578 Yanchao Liu, Arjan D. Verkerk, Jatindra K. Rath, Ruud E. I. Schropp, and Wim J. Goedheer

Effects of pressure and inter-electrode distance on depositionof nanocrystalline silicon under high pressure conditions

(C) Page 579-582 Shinji Kawai, Shuji Komuro, and Toru Katsumata

Synthesis of Nd-doped Si thin films by laser ablation

(C) Page 583-587 K. H. Yen, S. Nishizaki, K. Ohdaira, H. Matsumura, Y. T. Huang, H. W. Zan, and C. C. Tsai

Investigation of Cat-CVD amorphous silicon film properties under

high catalyzer temperature

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A6 Contents

(C) 88-591 P. A. Frigeri, 0. Nos, J. D. Calvo, P. Carreras, R. Roldan, A. Antony, J. M, Asensi,

and J. Bertomeu

Uniformity study of amorphous and microcrystalline silicon thin films

deposited on 10 cm x 10 cm glass substrate using hot wire CVD

technique

(C) Page 592-595 Purabi Gogoi, Himanshu S. Jha, Dinesh Deva, and Pratima Agarwal

Amorphous to nanocrystalline transition in HWCVD Si: H films

by substrate temperature variation

Silicon films: Crystallization

(C) Page 596-599 A. H. Mahan, M. S. Dabney, P. A. Parilla, and D. S. Ginley

The effect of the film H content on the crystallizationof laser processed and thermally annealed HWCVD a-Si: H

(C) Page 600-603 J. A. Schmidt, N. Budini, R. D. Arce, and R. H. Buitrago

Polycrystalline silicon thin films on glass obtained

by nickel-induced crystallization of amorphous silicon

(C) Page 604-607 Keisuke Ohdaira, Takuya Nishikawa, Kazuhiro Shiba, Hiroyuki Takemoto,

and Hideki Matsumura

Polycrystalline Si films with unique microstructures formed

from amorphous Si films by non-thermal equilibrium flash lampannealing

(C) Page 608-611 Chunya Wu, Zhiguo Meng, Xuedong Li, Shuyun Zhao, Zhaojun Liu, Juan Li, Shaozhen Xiong,

Man Wong, and Hoi Sing Kwok

Metal induced crystallization of a-Si using a nano-layerof silicon oxide mask (MMIC)

(C) Page 612-615 Zhiguo Meng, Zhaojun Liu, Shuyun Zhao, Man Wong, Hoi Sing Kwok, Juan Li, Chunya Wu,

and Shaozhen Xiong

Ni-Si oxide as an inducing crystallization source for making poly-Si

(C) Page 616-619 T. Wang, H. C. Sun, Y. Liu, G. R. Chen, J. Xu, D. Q. Wang, N. Wan, W. Li, X. F. Huang,Z. Y. Ma, L. Xu, and K. J.Chen

The effect of laser crystallization on the carrier transportand electroluminescence from nanocrystalline Si/Si02 multilayers

(C) Page 620-623 Ying Yao, Juan Li, Shuo Wang, Zhiguo Meng, Chunya Wu, and Shaozhen Xiong

The influence of Si precursor on poly-Si crystallized by YAG laser

Silicon films: Structural characterization

(A) Page 544-547 S. Muthmann, F. Kohler, R. Carius, and A. Gordijn

Structural order on different length scales in amorphous silicon

investigated by Raman spectroscopy


Phys. Status Soiidi C 7, No. 3-4 (2010) A7

(A) Page 548-551 Veronika Vavrunkova, Gijs van Elzakker, Miro Zeman, and Pavol Sutta

Medium-range order in a-Si: H films prepared from hydrogendiluted silane

(C) 24-627 M. Ribeiro and I. Pereyra

Study of phase separation and photoluminescent emission

in silicon nanostructured PECVD systems

(C) Page 628-631 Amartya Chowdhury and Swati Ray

Correlation between microstructure and residual stress

of nanocrystalline silicon films

(C) Page 632-635 S. W. H. Eijt, H. Zhu, H. Schut, M. Tijssen, and M. Zeman

Positron annihilation depth-profiling as a promising tool

for the structural analysis of light-soaked a-Si: H absorber layers

(C) Page 636-639 Takehide Miyazaki, Noriyuki Uchida, and Toshihiko Kanayama

First principles structure modeling for amorphous Si-rich transition

metal silicides

Silicon films: defects, electrical and optical characterization, and modeling

(A) Page 552-555 M. Fehr, A. Schnegg, C Teutloff, R. Bittl, 0. Astakhov, F. Finger, B. Rech, and K. Lips

Hydrogen distribution in the vicinity of dangling bonds

in hydrogenated amorphous silicon (a-Si: H)

(A) Page 556-560 J. A. Schmidt, N. Budini, F. Ventosinos, and C. Longeaud

Theoretical analysis and experimental results

on the modulated photocarrier grating technique

(A) Page 561-565 Kazuro Murayama, Yukio Nomura, and Tatsuya Fujisaki

Hopping transport at localized band tail states

in amorphous hydrogenated silicon

(A) Page 566-569 Hiroaki Okamoto, Yasushi Sobajima, Toshihiko Toyama, and Akihisa Matsuda

Laplace Meyer-Neldel relation

(C) Page 640-645 Mokhtar Chahi, Ahmed Bouhekka, Jamal Dine Sib, Aissa Kebab, Yahya Bouizem,

and Larbi Chahed

Optoelectronic properties simulation of hydrogenated microcrystallinesilicon Schottky diode

(C) Page 646-649 Matija Pirc, Joze Furlan, Andrej Levstek, and Marko Topic"

Optical properties of intrinsic hydrogenated amorphous silicon

at high electric field

(C) Page 650-653 Alexander Pushkarchuk, Anis Saad, Vadim Pushkarchuk, Alexander Fedotov,

Alexander Mazanik, Olga Zinchuk, and Sergey Turishchev

Quantum chemical modelling of Si sub-surface amorphisation due

to incorporation of H atoms and its stabilisation by 0 atoms

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A8 Contents

(C) Page 654-657 Oleksandr Astakhov, Reinhard Carius, Yuri Petrusenko, Valeriy Borysenko, Dmytro Barankov,

and Friedhelm Finger

Variation of the Fermi level in n-type microcrystalline silicon

by electron bombardment and successive annealing:ESR and conductivity studies

(C) Page 658-661 M. Gunes, R. E. Johanson, S. 0. Kasap, F. Finger, and A. Lambertz

The effect of aging on the dark conductivity and 1/f noise

in hydrogenated microcrystalline silicon thin films

(C) Page 662-665 Chisato Ogihara and Kazuo Morigaki

Lifetime distribution of photoluminescenceand radiative recombination rate of electron-hole pairs in a-Si:H

(A) Page 570-573 M. Weizman, L.-P. Scheller, N. H. Nickel, K. Lips, and B. Yan

Electron spin resonance in laser-crystallized polycrystallinesilicon-germanium thin films

(C) Page 666-669 Andrey Kazanskii, Guanglin Kong, Xiangbo Zeng, and Huiying Hao

Effect of light soaking on CPM absorption spectra in silicon films

with mixed amorphous-nanocrystalline structure

(A) Page 574-577 Naoki Ohta, Takashi Imamura, Hirokazu Shimizu, Tomohiro Kobayashi, and Hajime Shirai

Real time monitoring of the crystallization process duringthe plasma annealing of amorphous silicon

(C) Page 670-673 C. Sellmer, T. Bronger, W. Beyer, and R. Carius

Thermopower and Hall-effect investigationsof microcrystalline silicon films

(C) Page 674-678 Kazuro Murayama, Kunitaka Monji, and Hidenori Deki

Luminescence from hydrogen-free silicon nanostructures

in amorphous hydrogenated silicon

(C) Page 679-682 N. Khelifati, S. Tata, A. Rahal, R. Cherfi, A. Fedala, M. Kechouane, and T. Mohammed-Brahim

The annealing temperature effect on the electrical propertiesof boron-doped hydrogenated amorphous silicon a-Si:H(B)

(A) Page 578-581 Jakub Holovsky, Omit Dagkaldiran, Zdenk RemeS, Adam Purkrt, Tibor Izak, Ales' Poruba,

and Milan Van££ek

Fourier transform photocurrent measurement of thin silicon films

on rough, conductive and opaque substrates

(C) Page 683-687 M. F. Cerqueira, T. Monteiro, M. J. Soares, A. Kozanecki, P. Alpuim, and E. Alves

Erbium-doped nanocrystalline silicon thin films producedby RF sputtering - annealing effect on the Er emission

(C) Page 688-691 Akin Bacioglu, Alp Osman Kodolbas, and Ozcan Oktu

Excitation power dependent photoluminescence of PECVD

a-SiO -H (x < 2) thin films

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(C) Page 692-695 K. Morigaki, H. Hikita, K. Takeda, and P. Roca i Cabarrocas

The kinetics of light-induced defect creation

in hydrogenated polymorphous silicon - stretched exponentialrelaxation

(C) Page 696-699 Toshihiko Toyama, Masanori Kurihara, Yasushi Sobajima, Hiroaki Okamoto, Satoshi Takahashi,

Naoki Misaka, and Yasuo Tsutsumi

Photoacoustic spectroscopy and electron spin resonance studies

of defects in microcrystalline silicon thin films grown

on rough surfaces

(C) Page 700-703 G. Yilmaz, E. Turan, M. Gunes, V. Smirnov, F. Finger, and R. Bruggemann

Instability effects in hydrogenated microcrystalline silicon thin films

Nanocrystalline silicon; silicon and carbon nanostructures

(A) Page 582-586 A. Fejfar, A. Vetushka, V. Kalusova, 0. Certfk, M. Ledinsky, B. Rezek, J. Stuchlfk,

and J. Ko£ka (invited)

Relation of nanoscale and macroscopic propertiesof mixed-phase silicon thin films

(A) Page 587-590 Jakapan Chantana, Takuya Higuchi, Tomoyuki Nagai, Shota Sasaki, Yasushi Sobajima,Toshihiko Toyama, Chitose Sada, Akihisa Matsuda, and Hiroaki Okamoto

The relationship between /Ha/(/sjH*)2 and crystalline volume fraction

in microcrystalline silicon growth

(A) Page 591-594 Sanjay K. Ram, Laurent Kroely, Pavel Bulkin, and Pere Roca i Cabarrocas

Effect of ion energy on structural and electrical propertiesof intrinsic microcrystalline silicon layer depositedin a matrix distributed electron cyclotron resonance plasma reactor

(C) Page 704-707 M. Ledinsky, A. Vetushka, J. Stuchlfk, A. Fejfar, and J. Kocka

Raman mapping of microcrystalline silicon thin films

with high spatial resolution

(C) Page 708-711 S. N. Agbo, R. A. C M. M. van Swaaij, M. Zeman, and P. Sutta

Predicting (jc-Si:H crystal orientation from Raman measurement

under polarized light

(C) Page 712-715 Gabriel Micard, Giso Hahn, Barbara Terheiden, Daniel Chrastina, Giovanni Isella,

Tamara Moiseev, Daniela Cavalcoli, Anna Cavallini, Simona Binetti, Maurizio Acciarri,

Alessia Le Donne, Michael Texier, and Bernard Pichaud

Electrical and structural properties of p-type nanocrystalline silicon

grown by LEPECVD for photovoltaic applications

(A) Page 595-598 Jirf Cervenka, Kevin van der Ruit, and Kees Flipse

Effect of local doping on the electronic propertiesof epitaxial graphene on SiC

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A10 Contents

(C) Page 716-719 Daniel 0. Carvalho, Katia F. Albertin, and Marco I. Alayo

Optimized-geometry ARROW waveguides using Ti02as anti-resonant layer

(C) Page 720-723 Hussein Sabbah, Virginia Chu, Joao Pedro Conde, Soraya Ababou-Girard, Thomas Delhaye,

Arnaud LePottier, Francine Solal, and Christian Godet

Selective patterning of covalent molecular graftingon doped amorphous silicon templates

(C) Page 724-727 L. G. Vega Macotela, J. Douda, T. V, Torchynska, R. Pena Sierra, and L. Shcherbyna

Transformation of photoluminescence spectra at the bioconjugation

of core-shell CdSe/ZnS quantum dots

(C) Page 728-731 Aliaksei Vetushka, Antonin Fejfar, Martin Ledinsky, Bohuslav Rezek, Jifl StuchKk,

and Jan Kocka

Role of the tip induced local anodic oxidation

in the conductive atomic force microscopyof mixed phase silicon thin films

(C) Page 732-734 Tatsuya Okada, Seiichiro Higashi, Hirotaka Kaku, Katsunori Makihara, Hirokazu Furukawa,

Yasuo Hiroshige, and Seiichi Miyazaki

Effect of chemical composition of SiOx films on rapid formation

of Si nanocrystals induced by thermal plasma jet irradiation

(C) Page 735-738 Seiji Taguchi, Akihiro Ueda, Takeshi Tayagaki, Kazunari Matsuda, and Yoshihiko Kanemitsu

Quantized Auger recombination and carrier multiplicationin semiconductor nanoparticles and carbon nanotubes

(C) Page 739-742 Z. Y. Ma, G. Y. Liu, M. Y. Yan, G. Y. Xia, X. F. Jiang, T. Ling, H. C Sun, D. Q. Wang,

H. P. Dong, L. Xu, W. Li, K. J. Chen, J. Xu, and D. Feng

Enhanced blue-orange-red light emission from nc-Si: H/Si02 pillar

arrays using nanosphere lithography

Atomistic and theoretical modeling

(A) Page 599-604 F. Inam, James P. Lewis, and D. A. Drabold (invited)

Hidden structure in amorphous solids

(A) Page 605-608 K. Jarolimek, G. A. de Wijs, R. A. de Groot, and M. Zeman

Structural models of a-Si:H with a low defect concentration:

A first-principles molecular dynamics study

(A) Page 609-612 Rajendra Timilsina and Parthapratim Biswas

Theoretical study of hydrogen microstructure in models

of hydrogenated amorphous silicon

(A) Page 613-616 F. Jansson, A. V. Nenashev, S. D. Baranovskii, F. Gebhard, and R. Osterbacka

Negative differential conductivity in the hopping transport model

© 2010WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-c.com


(C) Page 743-746 Gerald Lucovsky

Dimensional constraints and percolation theory:physical mechanisms controlling electronic structure and defects

in high-k transition metal oxide dielectrics

(C) Page 747-749 C. Y. Fong, M. Shauhgnessy, R. Snow, and L. H. Yang

Theoretical investigations of defects in a Si-based digital ferromagneticheterostructure - a spintronic material

(C) Page 750-753 T. F. G. Muller, D. Knoesen, C. J. Arendse, S. Halindintwali, G. F. Malgas, Z. S. Houweling,and R. E. I. Schropp

Employing the effective medium approximation to model

the optical properties of crystallized a-Si:H obtained by MIC

Alloys and carbon

(C) Page 754-757 T. Chen, A. Schmalen, J. Wolff, D. Yang, R. Carius, and F. Finger

Aluminum doped silicon-carbon alloys preparedby hot wire chemical vapor deposition

(C) Page 758-761 Barbara Swatowska and Tomasz Stapinski

Optical and structural characterization of silicon-carbon-nitride thin

films for optoelectronics

(C) Page 762-764 Abdelkrim Fedala, Claude Simon, Nathalie Coulon, Tayeb Mohammed-Brahim,

Mehena Abdeslam, and Ahmed-Chafik Chami

Low temperature deposition of microcrystalline silicon germanium

Si,J3e„ by RF-PECVD

(C) Page 766-769 U. Coscia, G. Ambrosone, D, K. Basa, S. Ferrero, P. Delli Veneri, L. V. Mercaldo, I. Usatii,

and M. Tucci

Characterizations of nanostructured silicon-carbon films depositedon p-layer by PECVD

(C) Page 770-773 G. Ambrosone, D. K. Basa, U. Coscia, £. Tresso, A. Chiodoni, E. Celasco, N. Pinto,

and R. Murri

Study on the excimer laser annealed amorphous hydrogenated silicon

carbon films deposited by PECVD

(C) Page 774-777 Ayana Bhaduri, Arindam Kole, and Partha Chaudhuri

Nanocrystallites formation in a-SiC by low power plasma enhanced

chemical vapour deposition

(C) Page 778-781 Lihong Xiao, Oleksandr Astakhov, Reinhard Carius, Tao Chen, Haiyan Wang,Martin Stutzmann, and Friedhelm Finger

Paramagnetic states in uc-SiC: H thin films preparedby Hot-Wire CVD at low temperatures

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Contents

(C) Page 782-785 Yuri Vygranenko, Miguel Fernandes, Paula Louro, Manuela Vieira, and Andrei Sazonov

Optoelectronic properties of a-Si,_xCx:H films grownin hydrogen diluted silane-methane plasma

(C) Page 786-789 Marcus V. Pelegrini, Gustavo P. Render, and Ines Pereyra

a-SiC: H films deposited by PECVD for MEMS applications

(C) Page 790-792 Norimitsu Yoshida, Sho Terazawa, Atsuteru Takeuchi, Nobutaka Yoneyama,Tomo-o Morino, Zhao Jun, Hironori Natsuhara, and Shuichi Nonomura

Preparations of P- and N-doped hydrogenated microcrystalline cubic

silicon carbide films by VHF plasma enhanced chemical vapor

deposition method for Si thin film solar cells

(C) Page 793-796 Alessandro R. Oliveira, Ines Pereyra, and Marcelo N. P. Carreno

A study of metal contact properties on thermal annealed PECVD SiC

thin films for MEMS applications

(C) Page 797-800 Masami Aono, Shunsuke Kikuchi, Naoyuki Tamura, Nobuaki Kitazawa, Yoshihisa Watanabe,

and Shoji Nitta

Columnar structured amorphous carbon nitride films

(C) Page 801-804 C. J. Tang, A. J. S. Fernandes, I. Abe, J. Graao, J. G. Buijnsters, and J. L. Pinto

Novel morphology of chemical vapor deposited diamond films

(C) Page 805-808 Sh. Sh. Sarsembinov, 0. Yu. Prikhodko, A. P. Ryaguzov, S. Ya. Maksimova, Ye. A. Daineko,

and F. A. Mahmoud

Electronic properties of diamond-like carbon films modified

by silver nanoclusters

{C} Page 808-811 C. Zufiiga-I., A. Kosarev, A. Torres-J., P. Rosales-Q., W. Calleja-A., F.J. De la Hidalga-W.,and 0. Malik

Electrical characterization of a-C:H as a dielectric material

in metal/insulator/metal structures

(C) Page 812-815 Ayana Bhaduri and Partha Chaudhuri

Fine particles in amorphous silicon germanium thin films

(C) Page 816-819 M. Gune$, E. Turan, and G. Yilmaz

Investigation of light induced degradation in hydrogenated amorphous

silicon-germanium alloy thin films using temperature dependentphotoconductivity

(A) Page 617-620 Takehiro Iwasa, Tetsuya Kaneko, Isao Nakamura, and Masao Isomura

Polycrystalline silicon germanium thin films prepared

by aluminum-induced crystallization

(C) Page 820-823 Petr Sl^dek, Vilma BurSlkova\ and Pavel St'ahel

Structural and defect changes of hydrogenated SiGe films due

to annealing up to 600 °C

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Phys. Status Solidi C7, No. 3-4 (2010) A13

(C) Page 824-827 Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, and K. Yasutake

Investigation of structural properties of high-rate deposited SiNx films

prepared at low temperatures (100-300 °C) by atmospheric-pressureplasma CVD

(C) Page 828-831 Hengping Dong, Kunji Chen, Danqing Wang, Wei Li, Zhongyuan Ma, Jun Xu,

and Xinfan Huang

A new luminescent defect state in low temperature grown amorphous

SiNxOy thin films

(C) Page 832-835 Lucia V. Mercaldo, Paola Delli Veneri, Emilia M. Esposito, and Mario Tucci

Annealing effects on a-SiNx grown by PECVD usingdifferent gas mixtures

(C) Page 836-839 Edvige Celasco, Marzia Quaglio, Angelica Chiodoni, Carlo Ricciardi, Candido Fabrizio Pirri,Lorenzo Dominici, Francesco Michelotti, Francesco De Angelis, Enzo Di Fabrizio,

and Fabrizio Giorgis

Amorphous silicon and silicon nitride channel optical waveguides

(C) Page 840-843 Marcus V. Pelegrini and Ines Pereyra

Characterization of AIN films deposited

by r.f. reactive sputtering aiming MEMS applications

Chalcogenides: structure, photoinduced changes

(A) Page 621-626 Maria Mitkova, Yoshifumi Sakaguchi, Dmitri Tenne, Shekhar Kumar Bhagat,and Terry L. Alford (invited)

Structural details of Ge-rich and silver-doped chalcogenide glassesfor nanoionic nonvolatile memory

(A) Page 627-630 S. D. Savransky and A. Yelon

Interpretation and consequences of Meyer-Neldel rule

for conductivity of phase change alloys

(A) Page 631-634 Gerald Lucovsky

Strain-reducing chemical bonding self-organizationsin nanocrystalline composites and non-crystalline glasses and thin films

(A) Page 635-638 Eldar Mammadov, P. Craig Taylor, Arneil Reyes, Salima Mehdiyeva, and Phillip Kuhns

75As NMR relaxation in glassy Ge-As-Se

(C) Page 844-847 Gerald Lucovsky, Joseph P. Washington, Leonardo Miotti, and Michael Paesler

Analysis of the forgotten parts of the Ge K edge spectra:

life before the EXAFS oscillations

(C) Page 848-851 Sergey Kozyukhin, Alexey Sherchenkov, Ekaterina Gorschkova, Vera Kudoyarova,and Alexander Vargunin

Thermal effects in Ge-Sb-Te phase-change memory materials during

multiple thermal cycling

www.pss-c.com © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

(C) Page 852-856 Jennifer Luckas, Daniel Krebs, Martin Salinga, Matthias Wuttig, and Christophe Longeaud

Investigation of defect states in the amorphous phaseof phase change alloys GeTe and Ge2Sb2Te5

(C) Page 857-860 N. Nakagawa, K. Shimakawa, T. Itoh, and Y, Ikeda

Dynamics of principal photoinduced effects

in amorphous chalcogenides: In-situ simultaneous measurements

of photodarkening, volume changes, and defect creation

Chalcogenides: phase-changes, characterization, modeling, sulfides and selenides

(A) Page 639-641 Tamihiro Gotoh and Kenta Kawarai

The study of structural changes of amorphous Ge2Sb2Te5 films

after annealing by optical absorption spectroscopy

(C) Page 861-864_ M. Hamam, Y. A. El-Gendy, M. S. Selim, N. H. Teleb, and A. M. Salem

Structure and optical properties in the amorphousto crystalline transition in AgSbSe2 thin films

(C) Page 865-868 Sergey Kozyukhin, Edward Voronkov, and Konstantin Egarmin

Conductivity oscillations in Ge2Sb2Te5 films stimulated

by phase transformations

(C) Page 869-872 Alexandr Dobrovolsky, Vladimir Chemichkin, Ivan Belogorokhov, Zinovi Dashevsky,Vladimir Kasiyan, Ludmila Ryabova, and Dmitry Khokhlov

Transport properties and photoconductivityof nanocrystalline PbTe(ln) films

(C) Page 873-876 Shaikh Hasibul Majid and Robert E. Johanson

Excess noise in amorphous selenium p-i-n devices

(C) Page 877-880 Mohammed L. Benkhedir, Fahima Djefaflia, Mohammed Mansour, and Naser Qamhieh

Effect of As alloying on the valence band tail states in a-Se

(C) Page 881 -884 Vera Kudoyarova, Sergey Kozyukhin, Viktor Lebedev, and Alia Marchenko

Synthesis and characterization of As2X3 (X = Se, S)-Eu (THD)3hybrid materials

(C) Page 885-888 Roman Holomb, Volodimir Mitsa, Patrik Johansson, and Miklos Veres

Boson peak in low-frequency Raman spectra of AsxS100.x glasses:nanocluster contribution

(C) Page 889-892 Gerald Lucovsky and James C. Phillips

A microscopic bonding model for the compositional dependenceof the first sharp diffraction peak (FSDP) in Ge^e,^ alloys

(C) Page 893-896 Olexandr Kondrat, Natalija Popovich, Roman Holomb, Volodimir Mitsa,

Olexandr Petrachenkov, Margit Ko6s, and Miklos Veres

Ab initio calculations and the effect of atomic substitution

in the Raman spectra of As(Sb,Bi)2S3 films


Phys. Status Solidi C7, No. 3-4 (2010) A15

(C) Page 897-900 Sh. Sh. Sarsembinov, 0. Yu. Prikhodko, A. P. Ryaguzov, S. Ya. Maksimova, E. A. Daineko,

R. M. Iskakov, and V. Zh. Ushanov

On nanoheteromorphous structure in amorphous As253 films

prepared by different methods

(C) Page 901-904 P. A. Fernandes, P. M. P, Salome, and A. F. da Cunha

CuxSnSx+l (x = 2, 3) thin films grown by sulfurization

of metallic precursors deposited by dc magnetron sputtering

(C) Page 905-908 Gouri Sankar Paul and Pratima Agarwal

Structural, optical and thermal studies on PbS nanocubes

(C) Page 909-912 Gouri Sankar Paul and Pratima Agarwal

Evolution of nanostructure with reaction time for ZnS synthesizedby solvothermal process

(C) Page 913-916 P. M. P. Salome, P. A. Fernandes, and A. F. da Cunha

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films

from stacked metallic layers

(C) Page 917-920 F. Mesa, A. Dussan, and G. Gordillo

Study of the growth process and optoelectrical propertiesof nanocrystalline Cu3BiS3 thin films

(C) Page 921-924 Oleh Shpotyuk, Roman Golovchak, Vitaliy Boyko, and Sergei Kozyukbin

Cluster modeling of quasi-adaptive phases in vitreous germaniumselenides

Metal oxides and silicon oxide

(A) Page 642-646 Olindo Isabella, Folkert Moll, Janez Kr£, and Miro Zeman

Modulated surface textures using zinc-oxide films

for solar cells applications

(C) Page 925-928 Dong-Won Kang, Seung-Hee Kuk, Kwang-Sun Ji, Seh-Won Ahn, and Min-Koo Han

The effect of substrate temperature on optoelectronic characteristics

of surface-textured ZnO:AI films for micromorph silicon tandem

solar cells

(C) Page 929-932 Masaya Ichimura and Koichi Akita

Deposition of ZnS,_xOx thin films by the photochemical dip coatingmethod and application for heterojunction solar cells

(C) Page 933-936 R. Ayouchi, C Casteleiro, R. Schwarz, J. R. Barrado, and F. Martin

Optical properties of Ti02 thin films preparedby chemical spray pyrolysis from aqueous solutions

(C) Page 937-940 Katia Franklin Albertin and Ines Pereyra

Study of metal-oxide-semiconductor capacitors with r.f. magnetron

sputtering Ti0xNy films dielectric layer

www.pss-c.com © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Welnheim

A16 Contents

(C) Page 941- 944.

(C) Page 945-948.

(C) Page 949-952,

(C) Page 953-956.

(C) Page 957-959.

(C) Page 960-

(C) Page 964-

(C) Page 968-

(C) Page 972-

963.

967

971

975

(C) Page 976-979.

Lihong Xiao, Oleksandr Astakhov, Reinhard Carius, Andreas Lambertz, Thomas Grundler,


Defects and structure of uc-SiOx:H deposited by PECVD

Klaus Jager, Olindo Isabella, Lu Zhao, and Miro Zeman

Light scattering properties of surface-textured substrates

V. Bessergenev and H. L Gomes

Electrical properties of thin-films wide-band gap semiconductor Ti02

prepared by CVD

Paz Carreras, Aldrin Antony, Ruben Roldan, Oriol Nos, Paolo Antonio Frigeri,Jose Miguel Asensi, and Joan Bertomeu

Transparent conducting thin films by co-sputtering of ZnO-ITO targets

G. Juarez-Diaz, J. Martinez, M. L. Garcia-Cruz, R. Peha-Sierra, J. A. Garcia, and M. Pacio

Hall effect and conductivity in zinc oxide (ZnO) doped

by thermal diffusion of indium and copper

Daniel 0. Carvalho, Katia F. Albertin, and Marco I. Alayo

TiOxNy anti-resonant layer ARROW waveguides

Alexandre H, Gollub, Daniel 0. Carvalho, Thiago C. Paiva, and Marco I. Alayo

Hollow core ARROW waveguides fabricated with SiOxNy films

deposited at low temperatures

Saydulla K, Persheyev, Yongchang Fan, Steve Reynolds, and Mervyn J. Rose

Excimer laser wet oxidation of hydrogenated amorphous silicon

Alexandr Dobrovolsky, Roman Vasiliev, Konstantin Drozdov, Olga Maslova,

Marina Rumyantseva, Alexander Gaskov, Ludmila Ryabova, and Dmitry Khokhlov

Optical and photoelectric properties of nanocrystalline

Sn02-CdSe quantum dot structures

V. Verlaan, L. R. J. G. van den Elzen, G. Dingemans, M. C M. van de Sanden,

and W. M, M. Kessels

Composition and bonding structure of plasma-assisted ALD Al203 films

Organics

(A) Page 647-650 R. Bakker, P. Weijers, C H. M. van der Werf, J. K. Rath, and R. E. I. Schropp

Doping of oligo(phenyl acetylene) with iodine vapour

(C) Page 980-983 Gytis JuSka, Kristijonas Genevicius, Nerijus Nekrasas, and Gytis Sliauzys

Two-dimensional Langevin recombination

(C) Page 984-987 Jai Singh

Study of organic light emitting devices (OLEDs)

with optimal emission efficiency

© 2010WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.pss-c.com


(C) Page 988-991 H.-C. Neitzert, S. Concilio, P. lannelli, and P. Vacca

Electronic memory effect in a crystalline silicon/polyetherheterostructure

(C) Page 992-995 Reni Tomova, Petia Petrova, and Rumiana Stoycheva-Topalova

Role of bathocuproine as hole-blocking and electron-transporting layerin organic light emitting devices

(C) Page 996-999 Joao Piroto Duarte, Helena Vieira Alberto, Rui C6sar Vilao, Joao M. Gil, Alois Weidinger,and Nuno Ayres de Campos

Microscopic study of carrier transport in the organic semiconductor

zinc-phthalocyanine

(C) Page 1000-1004 Peiqing Yu, Denis Mencaraglia, Arouna Darga, Anne Migan, Roshanak Rabdbeh,Bernard Ratier, and Andr£ Moliton

Investigation of electric charge transport in conjugated polymer P3HT:

PCBM solar cell with temperature dependent current

and capacitance measurements

Solar cells: Silicon heterojunctions

(A) Page 651-656 Sara Olibet, Evelyne Vallat-Sauvain, Luc Fesquet, Christian Monachon, ATcha Hessler-Wyser,

Jer6me Damon-Lacoste, Stefaan De Wolf, and Christophe Ballif (invited)

Properties of interfaces in amorphous/crystalline silicon heterojunctions

(A) Page 657-660 T. F. Schulze, L. Korte, E. Conrad, M. Schmidt, and B. Rech

High-forward-bias transport mechanism in a-Si:H/c-5i heterojunctionsolar cells

(C) Page 1005-1010 C. Leendertz, R. Stangl, T. F. Schulze, M. Schmidt, and L. Korte

A recombination model for a-Si: H/c-Si heterostructures

(C) Page 1011-1015 T. Desrues, P.-J. Ribeyron, A. Vandeneynde, A.-S. Ozanne, F. Souche, D. Mufioz, C Denis,

D. Diouf, and J.-P. Kleider

B-doped a-Si: H contact improvement on silicon heterojunction solar

cells and interdigitated back contact structure

(C) Page 1016-1020 Christian Ehling, Jtirgen H. Werner, and Markus B. Schubert

a-SiC:H passivation for crystalline silicon solar cells

(C) Page 1021-1024 F. Einsele, W. Beyer, and U. Rau

Annealing studies of substoichiometric amorphous SiOx layersfor c-Si surface passivation

(C) Page 1025-1028 Yu Zhang, Yuqin Zhou, Zhenyu Jiang, Fengzhen Liu, and Meifang Zhu

Effect of acid-based chemical polish etching on the performanceof silicon heterojunction solar cells

www.pss-c.com© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhelm

A18 Contents

(C)Page 1029-1032

(C) Page 1033-1036

(C) Page 1037-1040

D. Munoz, T. Desrues, P.-J. Ribeyron, A. Orpella, I. Martin, C. Voz, and R. Alcubilla

Development of LASER fired contacts

on silicon heterojunction solar cells for the applicationto rear contact structures

D. Diouf, J. P. Kleider, T. Desrues, and P. J. Ribeyron

2D simulations of interdigitated back contact heterojunction solar cells

based on n-type crystalline silicon

W. Favre, M. Labrune, F. Dadouche, A. S. Gudovskikh, P. Roca i Cabarrocas, and J. P. Kleider

Study of the interfacial properties of amorphous silicon/n-type

crystalline silicon heterojunction through static planar conductance

measurements

Solar cell optics

(A) Page 661-666

(A) Page 667-670.

(C) Page 1041-1044

(C) Page 1045-1048

(C) Page 1049-1052

(C) Page 1053-1056

(C) Page 1057-1060

(C) Page 1061-1064

(C) Page 1065-1068

K. Bittkau and T. Beckers (invited)

Near-field study of light scattering at rough interfaces

of a-Si: H/uc-Si: H tandem solar cells

Rana Biswas and Dayu Zhou

Simulation and modelling of photonic and plasmonic crystal back

reflectors for efficient light trapping

Benjamin Lipovsek, Janez Krc, Olindo Isabella, Miro Zeman, and Marko Topic

Analysis of thin-film silicon solar cells with white paint back reflectors

Daniel J. Farrell, Wilfried G. J. H. M. van Sark, Steven T. Velthuijsen, and Ruud E. I. Schropp

Using amorphous silicon solar cells to boost the viabilityof luminescent solar concentrators

D. Caputo, G. de Cesare, and M. Tucci

Improving the built-in potential of p-i-n amorphous silicon solar cells

Vladimir Smirnov, Wanjiao Bottler, Andreas Lambertz, Haiyan Wang, Reinhard Carius,


Microcrystalline silicon n-i-p solar cells preparedwith microcrystalline silicon oxide (uc-SiOx:H) n-layer

M, Zeman, 0. Isabella, F. D. Tichelaar, and S. L. Luxembourg

Amorphous silicon-based multilayers for photovoltaic applications

P. Alpuim, A. Samantilleke, E. Marins, F. Oliveira, M. F. Cerqueira, L. Rebouta, S. Stefanov,

S. Chiussi, C. Serra, and J.E. Bourse

Amorphous silicon thin-film solar cells depositedon flexible substrates using different zinc oxide layers

Heinz-Christoph Neitzert, Laura Labonia, Michele Citro, Paola Delli Veneri, and Lucia Mercaldo

Degradation of micromorph silicon solar cells after exposure

to 65 MeV protons

6 2010 WIIEY-VCH Verlag GmbH &Co. KGaA, Weinheim www.pss-c.com


(C) Page 1069-1072 Wanjiao Bottler, Vladimir Smirnov, Andreas Lambertz, Jurgen Hupkes, and Friedhelm Finger

Window layer development for microcrystalline silicon solar cells

in n-i-p configuration

(C) Page 1073-1076 G. H. Wang, X. D. Zhang, S. Z. Xu, C. C. Wei, J. Sun, S. Z. Xiong, X. H. Geng, and Y. Zhao

Plasma deposition of p-i-n microcrystalline silicon solar cells using

a single plasma enhanced chemical vapor deposition chamber:

study of the phosphorus contamination

Thin film solar cells and electrodes

(A) Page 671-677

(A) Page 678-681

(A) Page 682-685

(A) Page 686-690

(A) Page 691-694

(C) Page 1077-1080.

(C) Page 1081-1084.

(C) Page 1085-1088.

(C) Page 1089-1092.

Baojie Yan, Guozhen Yue, Xixiang Xu, Jeffrey Yang, and Subhendu Guha (invited)

High efficiency amorphous and nanocrystalline silicon solar cells

A. Gordijn, S. Schicho, S. Muthmann, T. Kilper, H. Zhu, E. Bunte, and J. Hupkes

Significantly decreased production times for a-Si/uc-Si tandem cells

on texture-etched ZnO:Al

Bas B. Van Aken, Klaas J. Bakker, Maurits C R. Heijna, Dennis Reid, lain Baikie,

and Wim J. Soppe

In situ measurements of surface (photo)voltageof roll-to-roll deposited thin film silicon solar cells

Rainer Merz, Jens Kistner, Mohamed Ali Bouattour, and Markus B. Schubert

Optimization of the in situ series connection of amorphous silicon solar

modules on glass and foil substrates

E. V. Johnson, F. Dadouche, M. E. Gueunier-Farret, J. P. Kleider, and P. Roca i Cabarrocas

Open-circuit voltage increase dynamics in high and low deposition rate

polymorphous silicon solar cells

Xixiang Xu, David Beglau, Ginger Pietka, Scott Ehlert, Tining Su, Jinyan Zhang, Yang Li,

Ken Lord, Guozhen Yue, Baojie Yan, Arindam Banerjee, Jeff Yang, Subhendu Guha,

Peter G. Hugger, and J. David Cohen

High efficiency large area a-SiGe:H based multi-junction solar cells

using MVHF

Guofu Hou, Cao Yu, Fang Liu, Jian Sun, Xinhua Geng, and Ying Zhao

Low-temperature deposition of high quality (3-FeSi2 films

by co-sputtering of Fe and Si for (3-FeSi2/Si heterojunction solar cell

Thomas Grundler, Andreas Lambertz, and Friedhelm Finger

N-type hydrogenated amorphous silicon oxide containinga microcrystalline silicon phase as an intermediate reflector

in silicon thin film solar cells

Guofu Hou, Xiaoyan Han, Xinhua Geng, Xiaodan Zhang, Changchun Wei, Jian Sun,

Xinliang Chen, Jianjun Zhang, and Ying Zhao

Structural evolution optimization at p/i interface and

in the bulk intrinsic-layer for high efficiency microcrystalline silicon

solar cells

www.pss-c.com O 2010 WILEY-VCH Verlag GmbH &Co. KGaA, Welnhelm

A20 Contents

(C) Page 1093-1096 Monica Brinza, Jatindra K. Rath, and Ruud E. I. Schropp

Thin film silicon deposited at 100 °C by VHF PECVD:

optoelectronic properties and incorporation in solar cells

(C) Page 1097-1100 T. Zimmermann, C. Strobel, M. Albert, W. Beyer, A. Gordijn, A. J. Flikweert, J. Kuske,and J. W. Bartha

Inline deposition of microcrystalline silicon solar cells usinga linear plasma source

(C) Page 1101-1104 Michael Vetter, Jacinto P. Borrajo, and Jordi Andreu

New developments in the fabrication of amorphous silicon photo¬voltaic modules on very large 2.60 m x 2.20 m glass

(C) Page 1105-1108.

M. Nath, S. Chakraborty, K. H. Kim, E. V. Johnson, P. Roca i Cabarrocas, and P. Chatterjee

Performance of amorphous and microcrystalline silicon pin solar cells

under variable light intensity

(C) Page 1109-1111 M. J. Shi, X. B. Zeng, S. Y. Liu, W. B Peng, H. B Xiao, X. B. Liao, Z. G. Wang, and G. L. Kong

Dependence of transport properties in tunnel junctionon boron doping

(C) Page 1112-1115 Mario Moreno, Dmitri Daineka, and Pere Roca i Cabarrocas

Plasmas for texturing, cleaning, and deposition:towards a one pump down process for heterojunction solar cells

(C) Page 1116-1119 X. D. Zhang, F. H. Sun, G. H. Wang, S. Z. Xu, C C.Wei, G. F. Hou, J. Sun, S. Z. Xiong,X. H. Geng, and Y. Zhao

Effect of high crystalline p // interface layer on the performanceof microcrystalline silicon solar cells depositedin a single-chamber system

(C) Page 1120-1123 Wendi Zhang, Eerke Bunte, Janine Worbs, Hilde Siekmann, Joachim Kirchhoff, Aad Gordijn,and Jurgen HQpkes

Rough glass by 3d texture transfer for silicon thin film solar cells

(C) Page 1124-1127 W. W. Ji, X. D, Zhang, Y. Zhao, Z. H. Yang, N. Cai, C C Wei, J. Sun, and S. Z. Xiong

A new structure of counter electrode used for dye-sensitized solar cells

(C) Page 1128-1131 X. D. Zhang, X. Jin, D. F. Wang, S. Z. Xiong, X. H. Geng, and Y. Zhao

Synthesis of NaYF4: Yb, Er nanocrystals and its applicationin silicon thin film solar cells

Metal oxide thin film transistors and silicon thin film transistors

(A) Page 695-699 Warren B. Jackson, Randy Hoffman, Bao Yeh, Tim Emery, Tim Koch, C McConica,

and Ohseung Kwon (invited)

Metastability in multicomponent oxide transistors



(C) Page 1132-1135 Hideki Matsumura, Keisuke Ohdaira, and Shogo Nishizaki

Advantage of plasma-less deposition: Cat-CVD fabricationof a-Si TFT with current drivability equivalent to poly-Si TFT

(C) Page 1136-1139 Sung Hwan Kim, Sung Ki Kim, Jong-Kwon Lee, Seok-Woo Lee, Hong Koo Lee,

Seung Han Peak, Yong-ln Park, Chang-Dong Kim, Yong Kee Hwang, and In-Jae Chung

Performance and stability of low temperature hydrogenatedamorphous silicon thin film transistors fabricated

on stainless steel substrate

(C) Page 1140-1143 O. Moustapha, A. Abramov, D. Daineka, M. Oudwan, Y. Bonnassieux,and P. Roca i Cabarrocas

Low temperature processed p-type bottom gate microcrystalline silicon

thin film transistors

(C) Page 1144-1147 Kah-Yoong Chan, Aad Gordijn, Helmut Stiebig, and Dietmar Knipp

Ambipolar characteristics of microcrystalline silicon thin-film transistors

(C) Page 1148-1151_ Isman Souleiman, Khalid Kandoussi, Khaled Belarbi, Rabah Cherfi, Abdlkrim Fedala,

Nathalie Coulon, Claude Simon, and Tayeb Mohammed-Brahim

N and P type top-gate microcrystalline silicon TFTs processedat low temperature (T < 200 °C) on the same glass substrate

(C) Page 1152-1155 K. Belarbi, K. Kandoussi, I. Souleiman, C Simon, N. Coulon, and T. Mohammed-Brahim

Decreasing the thickness of the active layerof microcrystalline silicon TFTs

Detectors, sensors, other applications, and novel materials

(A) Page 700-703 Krystian Watty, Christian Merfort, Konstantin Seibel, Lars Schfller, and Markus Bohm

A fully integrated optical detector with a-Si: H based color photodiodes

(A) Page 704-707 Pierre Gidon, Benoit Giffard, Norbert Moussy, Pascale Parrein, and Ludovic Poupinet

Three hydrogenated amorphous silicon photodiodes stacked

for an above integrated circuit colour sensor

(A) Page 708-711 D. Caputo, G. de Cesare, A. Nascetti, and R. Scipinotti

a-Si: H temperature sensor integrated in a thin film heater

(C) Page 1156-1159 J. P. Conde, A. J6skowiak, B. LipovSek, A. Pimentel, A. T. Pereira, M. Santos, J. Kri,

M. Topic, D. M. F. Prazeres, and V. Chu

Spectral selectivity constraints in fluorescence detection

of biomolecules using amorphous silicon based detectors

(C) Page 1160-1163 Marc samann, Dominik Furin, Johannes Thielmann, Albrecht Pfafflin, Gunther Proll,Christine Harendt, GQnther Gauglitz, Erwin Schleicher, and Markus B. Schubert

Amorphous silicon based p-i-i-n photodetectorsfor point-of-care testing

www.ps5-c.com ffi 2010 WILEY-VCH Verlag GmbH &Co. KGaA, Welnhelm

A22 Contents

(C) Page 1164-1167 D. Caputo, G. de Cesare, A. Nascetti, and M. Tucci

Characterization of the common mode rejection ratio

of amorphous silicon balanced photodiode

(C) Page 1168-1171 Masaya Ichimura, Aodeng Baoleer, and Tetsuya Sueyoshi

Properties of gas sensors based on photochemically deposited

nano-crystalline Sn02 films

(C) Page 1172-1175 Mario Moreno, Roberto Ambrosio, Alfonso Torres, Andrey Kosarev, Maria Garcia,

and Jose Mireles

Measurements of thermal characteristics in silicon germaniumun-cooled micro-bolometers

(C) Page 1176-1179 Oleksandr Malik, F, Javier De la Hidalga-Wade, Carlos Zufiiga-lslas,and Jesus H. Abundis Patifio

UV-sensitive optical sensors based on ITO-gallium phosphide

heterojunctions

(C) Page 1180-1183 Roberto Ambrosio, Mario Moreno, Jose Mireles Jr., Alfonso Torres, Andrey Kosarev,

and Aurelio Heredia

An overview of uncooled infrared sensors technology based

on amorphous silicon and silicon germanium alloys

(C) Page 1184-1187 M. Vieira, P. Louro, M. A. Vieira, M. Fernandes, J. Costa, A. Fantoni, and M. A. Barata

Optical processing devices based on a-SiC: H multilayer architectures

(C) Page 1188-1191 P. Louro, M. Vieira, M. Fernandes, J. Costa, M. A. Vieira, J. Caeiro, N. Neves, and M. Barata

Optical demultiplexer based on an a-SiC:H voltage controlled device

(C) Page 1192-1195 L. G. Vega Macotela, T. V. Torchynska, J. Douda, and R. Pena Sierra

Variation of Raman spectra of CdSe/ZnS quantum dots

at the bioconjugation

(C) Page 1196-1199 Alessandro Virga, Rossana Gazia, Luca Pallavidino, Pietro Mandracci, Emiliano Descrovi,

Angelica Chiodoni, Francesco Geobaldo, and Fabrizio Giorgis

Metal-dielectric nanostructures for amplified Raman

and fluorescence spectroscopy

(C) Page 1200-1202 Tomoki Narita, Hiroyuki Ueno, Tatsuya Baba, Tetsuji Kume, Takayuki Ban, Tamio lida,

Hitoe Habuchi, Hironori Natsuhara, and Shuichi Nonomura

Preparation of NaSi thin films for the guest free Si clathrate thin films

by heat resistance apparatus using NaSi target materials

(C) Page 1203-1206 M. L. Garcfa-Cruz, J. Martfnez-Juarez, P. L6pez-Salazar, and G. JuSrez Dfaz

GaSb film growth by liquid phase epitaxy

(C) Page 1207-1210 Liangcai Wu, Xilin Zhou, Zhitang Song, Yan Liu, Henan Ni, Yuefeng Gong, Feng Rao,

Donglin Yao, Bo Liu, Sannian Song, and Songlin Feng

Study of phase change memory cell with inserting buffer layer

(C) Page 1211-1214 Mikl6s Veres, Elena Perevedentseva, Artashes V. Karmenyan, SSra T6th, and Margit Ko6s

Catalytic activity of gold on nanocrystalline diamond support


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