2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation...

12
2006 Work Plan Y. Sugimoto 25-Apr-2006

Transcript of 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation...

Page 1: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

2006 Work Plan

Y. Sugimoto

25-Apr-2006

Page 2: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Study Items

Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and the support structure Conceptual design of FPCCD for ILC Readout ASIC

Page 3: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Basic study of fully-dep. CCD

Charge spread Back-illumination CCD (S7170-0909-deep2) LASER / Fe55 April – May

Lorentzs angle From May 8th – 2 weeks at KEK cryogenic center S7170-0909-deep2 with S5466 as a reference

Page 4: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Simulation studies for FPCCD VTX

Background rejection with cluster shape Tracking efficiency with beam background Flavor tagging Vertex charge

Page 5: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Radiation damage study

Clock dependence of CTI Using standard CCD irradiated before

Electron annealing Verify Nick’s report Using CCDs irradiated with neutron before Irradiate with -source or beam?

Radiation damage of fully-depleted CCD Irradiate with -source or beam?

Radiation damage of FPCCD When can we get the FPCCD? – Up to HPK

Page 6: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Thin wafer and the support structure

Consider 2 options Partially thinned wafer Si-RVC-Si sandwich

Simulation with FEA program Measurement of flatness for partially thinned

wafer (S7170-0909-deep2) Can we get RVC sample?

Page 7: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Conceptual design of FPCCD

Simulation using FEMLAB Discussion with HPK Simulation using ENEXSS-TCAD

Page 8: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Readout ASIC Goal (3 years):

16/32 ch Amp-CDS-ADC with 0.635 mm pitch System noise < 50 electrons (depends on CCD) 4 – 6 bit 20 Mpix/sec Power: < 10 mW/ch (depends on thermal design of VTX)

Target of this year: 1ch sample device

Organization Osaka Univ. group is also doing R&D of CP-CCD and the R.O. A

SIC for X-ray astronomy Ikeda-san (JAXA) is collaborating with Osaka group for the ASIC Collaboration with Ikeda-san would be efficient for our R&D

Page 9: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

R&D Schedule

Charge spread /Lorentz angle

WS

Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Jan Feb

Study of radiation damage

Clock v.s. CTI, Damage of full-dep. CCD,etc,

B.G. rejection by cls shape Flavor tagging efficiency, etc.

Tracking efficiency

Machine-time?

R&D of r.o. ASIC

Thin wafer / Support

FPCCD Conceptual design

Deadline for proposal to LNS

Page 10: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Funding sources TOKUTEI-KOUBO – “T” KIBAN-(C) – “C” GAKUJYUTU-SOSEI – “G” KEK Annual budget – “A”

Basic study of fully depleted CCD C

Simulation study for FPCCD VTX for ILC C

Radiation damage Standard size C, A

Fine Pixel T, G

Electronics A, T

Thin wafer / support structure C

FPCCD conceptual design C, G

Readout ASIC G

Page 11: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Expected manpowerBasic study of fully depleted CCD Y.S., K.N., all

Simulation study for FPCCD VTX for ILC T.N., PD-A, A.M., PD-B

Radiation damage Standard size Y.S., K.N., PD-B, T.N., PD-A, St-A, and all

Fine Pixel

Electronics K.N.

Thin wafer / support structure Y.S.

FPCCD conceptual design Y.S., PD-B

Readout ASIC PD-A, St-A, K.I.

PD-A: Post-doc at Tohoku (Oct.06~)PD-B: Post-doc at KEK (Oct.06~)St-A: Student at Tohoku

Page 12: 2006 Work Plan Y. Sugimoto 25-Apr-2006. Study Items Basic study of fully depleted CCD Simulation studies for FPCCD VTX Radiation damage Thin wafer and.

Summary

We have won satisfactory level of funding for sensor R&D (not enough for all of R&D items of VTX)

We have a lot of things to do We now need manpower

At least 2 post-docs (Tohoku and KEK) by “GAKUJUTSU-SOSEI” grant

We anticipate more post-docs supported by “Postdoctoral fellowships for foreign researchers” of JSPS ( http://www.jsps.go.jp/english/e-fellow/fellow.html )

We also hope many graduate students to join