121004 IET Intro for Nippon Oclaro · Q3/2012 Intelligent Epitaxy Technology, Inc. Intelli EPI:...

Intelligent Epitaxy Technology, Inc.Q3/2012 www.intelliEPI.com

Intelligent Epitaxy Technology, Inc.

IntelliEPI Introduction

October 4, 2012

1250 E. Collins Blvd., Richardson, TX 75081, USA

Intelligent Epitaxy Technology, Inc.Q3/2012 www.intelliEPI.com2

Company Information Update

• Business Status, Facility, and Products

• Capabilities and in-situ sensor technology

• MBE infrastructure(real-time monitoring, cells, MBE tools)

• Quality Management System

Selected Product Highlights

• QWIPS and PIN

• pHEMT, iHEMT, and mHEMT

• HBT Activities (InP-based HBT)

Award

Summary

Intelli EPI: Outline


Intelli EPI: The Company

• A Texas semiconductor manufacturing company located in Richardson, TX, since January 1999.

• Founded by Dr. Yung-Chung Kao (TI), Dr. Paul Pinsukanjana (UCSB/JPL), Randy Thomason (TI), and Kevin Vargason (TI), combining experiences in electronics and optoelectronics. In 2001, Dr. J.M. Kuo (Lucent) joined.

• A venture capital funded company (A-round: 1999; B-round: 2000)

• ISO 9001 certified since March 2007 (current ISO9001:2008)

• Holding company registered at Cayman Islands in 2011 for Taiwan IPO preparation

IntelliEPI provides GaAs (up to 6in) and InP (up to 4in) MBE PHEMT and HBT epitaxial wafers to RF MMIC and wireless wafer fabs for communications applications. We also provide optoelectronics products (PIN/APD, IR detectors, lasers) and various III-V based industrial and energy-related products


Intelli EPI Business Status Update (08/12)• In our 14th year of operation (started in 1999); profitable since 2007; no debt

• 2011 sales: $17.2M, 30% growth over 2010 sales;

• 2012 sales: $20M, 1H/12 sales: $9M, 25% over 1H/11 number

• 2011 product mix: – GaAs vs. other III-V semiconductor: 67% to 33%– pHEMT vs. non-pHEMT: 60% to 40%– Top 3 products: GaAs pHEMTs, InP-based HBT/HEMT, Sb -based IR detectors

• 2012 projected product mix: InP-based (40%); GaAs pHEMT (40%); GaSb IR (20%)

• 2011 notables: – Expansion: leased 10,000 ft2 clean room space; new 7x6in MBE system (MBE-9)– High speed VCSEL (14G production ready, 28G passes reliability)– III-V metamorphic epi (IIIV/Si, 300mm, high mobilit y InGaAs)– GaSb: Sb-based T2 SLS IR detectors, 4in epi-ready s ubstrates polish

• 2012 focus:– Establish GaSb wafer polish and crystal growth in o ur US facility at Allen, TX– Improve MBE system/components robustness and campai gn length – Production ready products (APD, VCSELs,) and 300mm IIIV/Si mHEMT– Expand new IR materials polish/crystal growth capab ility (InSb, CZT)– Set up “dedicated” MBE service (signed 5 year cont ract for InP HBTs, >$6M/yr)

• Taiwan IPO scheduled for OTC market listing by 2012/2013 time frame


Intelli EPI: Technical Experience

Technical team has combined experience over 130 years in industrial III-V MBE operation (GaAs and InP)

Yung-Chung Kao, Ph.D.EE, UCLA, ‘87; Texas Instrument, ‘87-’98; IET, ‘99-date • 30 years in III-V related business. 28 years in MBE. Head of TI’s MBE Lab. 89-96.

• 12 US patents and over 100 technical publications related to III-V materials, devices.

Paul Pinsukanjana, Ph.D.Phys., UCSB, ‘94; EPI (Veeco), ‘96-’97; JPL, ’97-’99; IET, ‘99-• 18 years in III-V electronics and optoelectronics: MBE growth, processing, and

characterization. Hold 3 patents on in-situ real-time sensor technology for MBE.

Jenn-Ming Kuo, Ph.D.EE, Rutgers U., ‘87; AT&T/Lucent Bell Labs, ‘86-’01; IET, ‘01-• 30 Years in III-V epitaxial growth by MBE and gas source MBE. 28 years experience in

R&D of III-V electronic and opto-electronic device, MBE growth, and device processing.

• 9 US patents and 128 technical publications related to MBE growth and III-V devices.

Randy Thomason, Texas Instrument, ’82-’96; TriQuint Semi., ’96-’98; IET, ’99-• 28 years in MBE operation, modification, facility maintenance, and construction

Kevin Vargason, Texas Instrument, ’90-’98; IET, ’99-• 20 years in semiconductor characterization, MBE production, and failure analysis


Intelli EPI: Facility at Richardson, Texas

Current facility since January 2002: 1250 E. Collins, Richardson, TX (Dallas suburb)

• 23,000 ft2 (production: 13,000 ft2; Office: 10,000 ft2)

• Set up to host 8 production MBE systems

• Clean room for post growth testing and LAD processing

• 36 full time employees

• Expansion to a 10,000 ft2 leased space: class 10-10,000 clean rooms (7/11)


IntelliEPI: MBE Manufacturing Area at Richardson, TX Site

• MBE manufacturing area have 8 multi-wafers MBE systems installed (two 7x6”, three 4x6”, three 4x4”); each bay has independent AC, exhaust, class100 load/unload, airline, waterline, N2 connections.

• New 7x6” MBE-9 received in Dec, 2011 and in operation. One more slot left at this facility. New facility remodeling in progress

M9 (7x6”)

M2, M1 (4x4”)M8 (4x4”)

M4 (4x6”)M3 (4x6”)M5 (7x6”)

M6 (4x6”)


Intelli EPI: MBE Facility in Richardson, Texas

• 8 installed MBE reactors:– 2 Riber 7000 (7x6”, 14x4”)– 3 Riber 6000 (4x6”, 9x4”, 15x3”)– 2 Riber 49, 1 Riber V100 (4x4”, 6x3”)

• 8th (Riber7000) delivered in 12/11

• Dedicated operation and cleaning facilities designed to handle phosphorous for all MBE systems Riber 7000


Intelli EPI: Multi-Wafer Production MBE Platen DesignCapacity for production reactors

Riber7000: 7x6”

14x4”

25x3”

Riber6000: 4x6”

9x4”

15x3”

Riber 49: 4x4”

6x3”

11x2”

Riber7000: 7x6” MBE reactor

6”

6”

4”

Experienced with product transition:

• Development to production on multi-wafer MBE systems

• Reactor & substrate size scaling: mainly support from 2” to 6” size substrates (1”, 200mm, and 300mm are also supported)


Intelli EPI: Post-growth Characterization Capability

• Class 100 clean room: (2000 ft2)

• Characterization tools: – X-ray diffraction– PL mapping– Surface particle scan– Hall measurement– Contactless resistivity mapping– Electro-chemical CV profiling– White light reflection

spectrometer– Electrical CV profiling– Mercury probe CV


Intelli EPI: MBE Expansion Plan at Allen, TX

• IET/Allen site on lease since 07/11 for 1) US polish and GaSb crystal growth and 2) MBE 2nd site

• Class-10K clean room: 8,000 ft2 and Class-1 clean room: 2,000 ft2 (plan to add to lease Jan. 2013). Another 3,000 ft2 10K clean room space is available

• Can hold 6-7 multi-wafer MBE systems


Intelli EPI: III-V Compound Semiconductor Product Matrix

RF and microwave

High Speed Digital

Optoelectronics

Applications

• RF components in handsets

• Automotive radar

• Defense related

• OC768- 40Gbps network

• OC192-10Gbps network

• Fiber optic network light sources and Photo-detectors

Device Structure

(Red in Production mode)

• GaAs pHEMT • GaAs mHEMT • InP HEMT • InP HBT

• InP SHBT/DHBT • InP HEMT • GaAs mHEMT • GaAsSb DHBT

• GaAs PIN/APD • InP PIN/APD • QWIP • Diode laser • Type-II SLS • Modulator


Intelli EPI: 6in Capacity Analysis and Expansion (pHEMT)

• Assume 85% machine uptime, and 90% yield under 24/7 operation

• PHEMT migration to InGaP-etch stop �� most systems have Phos. Capability

• Received new 7x6in MBE in 12/2011; another one in planning (*proposed)

• 3 other 4x4in MBEs for Sb-based, P-based, and N-based production/development

Current Capacity 24x7 (18 pHEMT runs/day)

4Q/2012 Capacity for pHEMT (24X7, 18 runs)

4X6”MBE3(As,P)

4X6”MBE4(As,P)

7X6”MBE5(As)

4X6”MBE6(As)

7x6”MBE9(As,P)

7x6” MBE10(9/12)*

1650 pHEMT/mo

1650 pHEMT/mo

2900 pHEMT/mo

1650 pHEMT/mo

1650 pHEMT/mo

1650 pHEMT/mo

2900 pHEMT/mo

1650 pHEMT/mo

2900 pHEMT/mo

2900 pHEMT/mo

For pHEMTs 8000 pHEMTs 11000 pHEMTs/mo

14000 pHEMTs/mo


Intelli EPI: Production Real-Time Sensors

• Run-to-run reproducibility:– Maintaining critical specification ranges– Verification of growth process details (condition a nd layers)

• Limitations of ex-situ characterization:– Slow post-growth feedback– Additional wafer handling and cost– Limited information about growth condition profile vs. epi-depth

• New product development:– Faster development cycle time– Improved performance for more demanding specificati ons

• Bad run detection/correction/termination:– Loss of wafers: very expensive for larger systems a nd for InP– Wasted machine time, materials, & operating expense s


Intelli EPI: Overview of in-situ Sensor Technologies• Substrate temperature

– Pyrometry– Absorption Band-Edge Spectroscopy

(ABES): band-gap dependence on temp

• Materials composition– Optical-based Flux Monitor (OFM):

atomic absorption of group III fluxes

• Growth rate– Optical Reflectometry– Pyrometric Interferometry

ABES light source:Light pipe, orHeater filament

Optical Pyrometer

Optical Reflectometry

OFM

OFM setup

Absorption Band-Edge Spectroscopy,Pyrometer, and

Laser Reflection.


Intelli EPI: PHEMT In-situ Monitoring with OFM

• Direct composition monitoring for each critical layer

• In-situ composition monitoring for key layers:– InGaAs Channel: Accurate x-ray measurement– AlGaAs Gate: X-ray represents average of SL and Gat e– InGaP Etch Stop: Very thin layer limits x-ray accur acy

0

10

20

30

2000 2500 3000 3500

AlGaIn

atom

ic a

bosr

ptio

n (%

)

time (sec)

30348D

n+ GaAs Cap

n InGaP Etch Stop

n AlGaAs Gate

AlGaAs Spacer

InGaAs Channel

AlGaAs Spacer

AlGaAs

GaAs

AlGaAs

GaAs Buffer

GaAs Substrate

SL

Si - delta

PHEMT Structure

OFM Profile During PHEMT Growth

AlGaAsGate

InGaPEtchStop

InGaAsChannel

GaAs/AlGaAsSL


Intelli EPI: Comparison of OFM to x-ray for InxGa1-xAs

• Relative absorption sensitivity factor for each range of x is kept fixed.

• Data up to 5 months span: σ (xOFM - xx-ray) is 0.7% or better for all ranges of x, In mole fraction (%).

0 20 40 60 800

10

20

30

40

50

60

day

In m

ole

frac

tion

(%)

0

10

20

30

40

50

60

0 20 40 60 80 100 120 140 160

OFM (PHEMT)

x-ray (PHEMT)

OFM (HBT)

x-ray (HBT)

day

0

10

20

30

40

50

60

0 10 20 30 40 50 60

Riber 6000Riber 49

OF

M c

ompo

sitio

n (%

)

x-ray composition (%)

x from OFM vs. x-rayRiber 49 Riber 6000

Composition Range 15% 20% 53%Riber49 ±0.7% ±0.7%Riber6000 ±0.3% ±0.3% ±0.7%

Standard deviation (σ ) of the difference between measured OFM & x-ray compsoition x (%)


Intelli EPI Infrastructure 2: Cell Development

Production MBE system used for high volume operation has to be low cost and highly reliable. R&M replacements of key components are required due to heavy cycling under elevated temperatures.

• IntelliEPI is 100% hardware independent from MBE vendor for R&M

• IntelliEPI has established a self-sufficient K-cell design (50% more capacity than SUMO cells), manufacturing, and overhaul capability since 2008. Currently, all cells have been exclusively constructed and maintained in-house.


Intelli EPI: Infrastructure

19

IET built R6000 18” Manipulator Oven

IET built dual cell on one flange

IET: uniformity hardware/simulat.

IET designed/built K-cell assembly


Intelli EPI: Cell Completion


Intelli EPI: Improved Uniformity of Source Metals

Various crucibles design provides trade-off between uniformity and efficiency• Wider crucible reduces epi-runs per kg of materials loaded

• Optimized design yield acceptable uniformity to customer with high efficiency

Group IIISource metal

Substrate Heater

Platen, withDownward facing substrates

> 15% increase in beam area


Notch

Notch

NotchNotch

Notch

Notch

Infrastructrue 3: 2-Zone Heater forTemperature uniformity

• 6” GaAs wafer uniformity– Improved from over ±4.5°C variation on outer (single zone) wafer to ±1°C (dual zone V.4)

» No data from single zone manipulator available, but admittedly worse than V.1

Data courtesy of


• Rs mapping pattern improves significantly due to mainly better heater, platen, and cells design

Intelli EPI: Current typical 6” Rs mapping


Intelli EPI: Quality Management System

UCL

USL

LCL

LSL

SPC chart of contactless sheet

resistivity mapping during PHEMT

production

• ISO9001:2000 certified since March 2007

• Utilize SPC for volume production tracking/control

CPK ~ 4.7


Intelli EPI: MBE Stability, Uniformity, & Interface Abruptness

• Stability of growth rate during long repeated structure as indicated by narrow x-ray peaks

• Excellent interface and materials quality as indicated by sharp x-ray peaks

• ±0.5% thickness uniformity across 6 inch diameter wafer based on x-ray

• Achieved 100% pixel yield with 320x256 format FPA

Riber60004x6” Platen

Courtesy of QmagiQ8.6 µm thermal image taken

with large format 640x512 QWIP FPA IntelliEPI. Die size ~16x13 mm 2.

1

10

100

1000

104

105

106

-4000 -2000 0 2000 4000

Platencenter6" Inner6" center6" outerC

ount

Angle (Arcsec)

10511F

004 x-ray scans across platen


Low Intrinsic Background InGaAs on InP

IntelliEPI’s optimized MBE PIN advantages:

• Nearly depleted at 0V bias

• Background doping level better than MOCVD

• Intrinsic InGaAs mobility from 10 –12x103 cm2/V·sec

0

0.05

0.1

0.15

-10-8-6-4-202

MOCVDTypical MBEOptimized MBE

Ca

p/A

rea

(fF

/µm

2 )

V bias (V)

1013

1014

1015

1016

1017

5000 1 104 1.5 104 2 104 2.5 104

Ne (

cm-3

)

Depletion Depth (Å)

CV profile comparison CV Doping profile vs. depth

P+ layer (InP)

i-layer (2um InGaAs)

N+ layer (InP)InP substrate

5,000

7,000

9,000

11,000

13,000

15,000

1.00E+14 1.00E+15 1.00E+16

Electron Concentration (cm -3)

Hal

l Mob

ility

(cm

2 /Vs) IET typical conditions

IET optimized conditionsPublished data from MBEPublished data from MOCVD

Comparison of InGaAs Hall Mobility


High Speed InGaAs/InP PIN Photodetector from MBE

• Average 3 dB bandwidth of ~ 4.6 GHz @ –2V

• Dark current well below 1 nA @ –2V

1.E-10

1.E-09

1.E-08

0 5 10 15 20 25 30Reverse bias voltage (V)

Dar

k cu

rren

t (A

)

0.80.820.840.860.88

0.90.920.940.960.98

1

-5-4-3-2-10

Applied voltage (V)

Res

pons

ivity

(A

/W)

0C40C80C120C

0.E+00

2.E+09

4.E+09

6.E+09

8.E+09

-5-4-3-2-10Applied voltage (V)

Fre

quen

cy (

Hz)

40C

0

200

400

600

800

1000

1200

2.0

2.4

2.8

3.2

3.6

4.0

4.4

4.8

5.2

5.6

6.0

3dB Bandwidth (GHz)

Num

ber

of R

esul

ts

Standard I-layer Doping

Improved I-layer Doping

Data Courtesy

ofVITESSE

75 µm Diameter Active Area

Dark Current

Photo response @ 1550 nm

3 dB Bandwidth @ 1550 nm

3 dB Bandwidth Histogram Across 4” Wafer

Bias@ –2V


InGaP and AlAs-etch stop pHEMTs• Power and low noise pHEMTs with one or multiple etch stops• Current average volume: 6000-8000 4in/6in wafers per month• Volume supplier to US, Japan, and Taiwan OEM/ODM foundries

pHEMT production control• No Hall sample; direct etch-back Hall for mobility/2DEG charge• Real-time sensors, mercury probe CV, X-ray simulation used• Device and system qual based on customer’s spec/feedback: qual

lot, look ahead lot, pilot lot• Customer feedback of idss, Vpo data for correlation • SPC process implemented for pHEMT production control (ISO and

beyond)• No quick large devices processing

HEMT development in:• Buffer optimization; higher InGaAs channel; metamorphic; InP• Sb-based HEMT on InP

Intelli EPI: HEMT Experience

Intelligent Epitaxy Technology, Inc.06/2010

IntelliEPI: InP Metamorphic-HEMT DevelopmentUnique metamorphic buffer Design for Production (cost, reliability) • Thin buffer with thickness similar to pHEMT (0.4-0.6um)• Graded to lattice-matching In.52Al.48As buffer• In Situ Monitoring Critical for Run-to-Run Reproducibility

– Growth temperature control is critical for morphology and buffer quality– Composition control is essential for charge and device characteristics

mHEMT Status• InGaAs/InAlAs composition option: 40% and 52% based on specs• 52% In mHEMT in US foundry production since 2003• Both uniform and composite channel design (3.5-4E12 cm-2)• High 2DEG electron mobility (9,000 to 10,000 cm2/V-sec)

Customer Recent Publication• High performance InP mHEMT on GaAs substrate with multiple

Interconnect layers, W. Ha et al, 2010 IPRM Proceedings, Takamatsu, Japan, 2010


MHEMT: Temperature and Group III flux In Situ Monitoring

• MHEMT: InP-performance on GaAs substrate.• Critical growth parameters: substrate temperature, and growth rates.• Room temp mobility 11,000 cm2/V*sec, ns~3.9e12 cm-2.

Contact (InGaAs)Gate (InAlAs)

Channel (InGaAs)

buffer (InAlAs)

m-buffer (InAlAs)

GaAs substrate

-5

0

5

10

15

20

25

30

35

2000 3000 4000 5000 6000 7000 8000

AlGaIn

ABES growth temp

atom

ic a

bsor

ptiio

n (%

)

substrate temp

time (sec)

10097D

InAlAsm-buffer

InAlAsbuffer

InGaAsChannel


30-nm D-Mode & E-Mode In0.7Ga0.3As/InP HEMT

D-mode InP HEMT on InP• Gm = 1.4 S/mm• fT = 547 GHz• fmax = 400 GHz

E-mode InP HEMT on InP• Gm = 2.2 S/mm• fT = 550 GHz• fmax = 350 GHz


E-Mode In0.7Ga0.3As/InP HEMT and mHEMT on GaAs

-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.60.0

0.5

1.0

1.5

2.0

0.0

0.5

1.0

1.5

2.0 Ids gm Ig

Vds = 0.6 V ~ 0.8 V in 0.1-V step

Ids (A

/mm

) & g

m (S

/mm

) & Ig

(mA/

mm

)

Igs (A

/mm

)1 10 100 100

0

10

20

30

40 6/07/07 SN:FLARE1-7-IE#83SU_C43R2

MAG/MSG

Ug

|S21|2

|h21|2

Vds = 0.6 VVgs = 0.2 V

fT.int = 501 GHzfT.ext = 428 GHzfmax.int = 319 GHzfmax.ext = 301 GHz

-20 dB/decade

Gai

n (d

B)Frequency (GHz)

Strain-relaxed InP mHEMT on GaAs• Gm = 1.7 S/mm• fT = 500 GHz• fmax = 320 GHz

InP HEMT on InP• Gm = 2.2 S/mm• fT = 550 GHz• fmax = 350 GHz


• InP-based HEMT allows more charge and higher mobility– 2DEG (300K): -3.20E12 cm-2– Mobility (300K): 11500 cm2/V-sec

• Buffer thickness ranged from 2000A to 5000A

• Typical InGaAs channel In composition from 53% to 75%

• InAs insert can be added with max thickness <20A

• InP etch stop layer can be added

Intelli EPI iHEMT: Typical Structure with Strained Channel

Layer Comment Material x Thickness (Å) Dopant Level Type

6 Cap In(x)Ga(1-x)As 0.53 200 Si 5E19cm-3 N+

5 Barrier In(x)Al(1-x)As 0.52 110 - - i

4 Planar doping - - Si 5E12 cm-2 N

3 Spacer In(x)Al(1-x)As 0.52 30 - - i

2 Channel In(x)Ga(1-x)As 0.65 150 - - i

1 Buffer In(x)Al(1-x)As 0.52 5000 - - i

Substrate SI InP


Intelli EPI iHEMT: InAs insert and Multiple Etch Stops

• Mesa floor and gate etch stop layers added in this structure

• InAs notch inserted in strained InGaAs channel– 2DEG (300K): -3.70E12 cm-2– Mobility (300K): 12400 cm2/V-sec

Layer comment Material x Thickness (Å)

Dopant Level (/cm 3) Type

13 Cap 4 In(x)Ga(1-x)As .70 100 Si 5.00E+19 n+

12 Cap 3 In(x)Ga(1-x)As .53 180 Si 5.00E+19 n+

11 Cap 2 In(x)Al(1-x)As .52 140 Si 2.00E+19 n+

10 Etch Stop InP 35

9 Gate In(x)Al(1-x)As .52 80

8 Si Planar doping Si-Delta Doping (Calibrated) Si n

7 *Upper Spacer In(x)Al(1-x)As .52 35

6 *Channel In(x)Ga(1-x)As .70 20

5 *Channel InAs 20

4 *Channel In(x)Ga(1-x)As .70 60

3 Buffer In(x)Al(1-x)As .52 1,000

2 Etch Stop InP 80

1 Buffer In(x)Al(1-x)As .52 3,000

Substrate S.I. InP


IntelliEPI: InP HEMT

InAlAs-InGaAs HEMT on InP• HEMT structure used in US and Japan IDMs for ft over 450 GHz

applications• InAlAs buffer growth at optimized temperature with composite

channel• In situ OFM composition and ABES temperature monitoring are

key• Thin InP etch stop ensure uniform device characteristics for IC

fab.


InAlAs-InGaAs HEMT Grown on InP Substrate

110

210

310

410

510

-4000 -3500 -3000 -2500 -2000 -1500 -1000 -500 0 500 1000

iHEMT

Inte

nsit

y (c

ps)

OMEGA-2THETA (arcsec)

-5

0

5

10

15

20

25

30

2000 2500 3000 3500 4000

AlGaIn

OFM

ato

mic

abs

orpt

ion

(%)

time (sec)

10097F

• InAlAs IHEMT with composite InGaAs channel

• In situ OFM and X-ray spectrum shows high quality and uniformity growth profile

• InP etch stop

comment Material x Thickness (Å)

Cap In(x)Ga(1-x)As:Si .53 300Etch Stop InP 40

In(x)Al(1-x)As .52Delta doping Si-Delta Doped

Spacer In(x)Al(1-x)As .52 30Channel In(x)Ga(1-x)As .70Buffer In(x)Al(1-x)As .52 3,000

Substrate InP


IHEMT Uniformity, Surface Condition, and Mobility

• Excellent doping uniformity from LEI resistivity: less than 1% non-uniformity

• Low Surf scan particle counts: 0.8 to 7.7 um: <10 cm-2

• Hall mobility over 11,000 cm2/V-s

-1.2E+13-1E+13-8E+12-6E+12-4E+12-2E+12

0

20 25 30 35 40Etching time (sec.)

Shee

t cha

rge

(cm

-2)

800090001000011000120001300014000

Mob

ility

(cm

2/Vs

)

Sheet charge to etching time

Mobility to etching time


III-V Semiconductor Material Systems

Ge

Si

GaAs

GaP

InP

AlSb

GaSb

InAs

ZnTe

ZnSeAlP

AlAs

0.45

0.50

0.60

0.80

1.00

1.30

2.00

5.00

0.8

0.4

1.2

1.6

2.0

2.4

2.8

0

5.4 5.6 5.8 6.0 6.2 6.4

Ene

rgy

Gap

(eV

)

Wav

elen

gth

(µm

)

InGaAs

Lattice Constant (Å)

InSb

Lattice Constant, µµµµm

Ene

rgy

Gap

, eV

Wav

elen

gth,

µµ µµm

GaAs

AlSb

InAs

GaSb

AlAs

InP


III-V Semiconductor Material Systems

Ge

Si

GaAs

GaP

InP

AlSb

GaSb

InAs

AlP

AlAs

0.450.50

0.60

0.80

1.001.30

2.00

5.00

0.8

0.4

1.2

1.6

2.0

2.4

2.8

05.4 5.6 5.8 6.0 6.2 6.4

Ene

rgy

Gap

(eV

)

Wav

elen

gth

(µm

)

InGaAs


InSb

Higher Speed

Sb-based materials have highest electron and hole mobilities and velocities.

Lower Power Consumption Sb-based materials have lowest bandgaps and reach electron pe ak velocity at lowest electric fields.

GaAs-based HEMTs and HBTsFirst generation:

InP-based HEMTs and HBTsSecond generation:

Sb-based HEMTs and HBTsNext generation:

Ge

Si

GaAs

GaP

InP

AlSb

GaSb

InAs

AlP

AlAs

0.450.50

0.60

0.80

1.001.30

2.00

5.00

0.8

0.4

1.2

1.6

2.0

2.4

2.8

0

0.8

0.4

1.2

1.6

2.0

2.4

2.8

05.4 5.6 5.8 6.0 6.2 6.45.4 5.6 5.8 6.0 6.2 6.4

Ene

rgy

Gap

(eV

)

Wav

elen

gth

(µm

)

InGaAs


InSb

Higher Speed

Sb-based materials have highest electron and hole mobilities and velocities.

Lower Power Consumption Sb-based materials have lowest bandgaps and reach electron pe ak velocity at lowest electric fields.

GaAs-based HEMTs and HBTsFirst generation:GaAs-based HEMTs and HBTsFirst generation:

InP-based HEMTs and HBTsSecond generation:InP-based HEMTs and HBTsSecond generation:

Sb-based HEMTs and HBTsNext generation:Sb-based HEMTs and HBTsNext generation:


Sb-based InAs HEMT Grown on GaAs

• Thick AlSb buffer layer on GaAs (SI) substrate to accommodates 8% lattice mismatch

• Modulation doping and InAs channel: 2DEG density: 1-4 x 1012/cm2 and high mobility

• Large InAs/InAlAs valence band offset: lower leakage current from holes

• InAs sub-channel reduces impact ionization: higher frequency operation

0 50 100 150 200 250 300 350 400 450 500

-1.0

-0.5

0.0

0.5

1.0

AlSb

In0.4Al 0.6As

InAs

InAs(Si)

E1E0

E0’

Distance (Å)

Ene

rgy

(eV

)

AlSb 125 Å InAs(Si) 12 ÅAlSb 12 Å

InAs 20 ÅIn0.4Al 0.6As 40 Å

SI GaAs substrate

AlSb 1.7 µµµµm

InAs 100 Å

AlSb 30 ÅInAs subchannel 42 Å

AlSb 500 Å

Al 0.7Ga0.3Sb 0.3 µµµµm

6.1 Å Lattice Spacing


Intelli EPI: Sb-based HEMT Grown on InP

• Sb-based HEMT can be grown on GaAs, InP, or GaSb

• Thick metamorphic buffer needed for growth on GaAs and InP

• Si Pulse doping within InAs layer

• Sb-based mHEMT on InP– 2DEG (300K): -2.40E12 cm-2– Mobility (300K): 18000 cm2/V-sec

Comment Material x Thickness (Å) Dopant Level Type

Cap InAs 50 Si 5E18cm-3 N+

schottky layer AlSb 75 - - i

Planar doping InAs/Si/InAs 15 Si 4E12 cm-2 N

spacer AlSb 40

channel InAs 160 - - i

Meta buffer AlSb 5K to 10K - - i

Substrate S.I. InP (100)


Intelli EPI IIIV-Mismatch Growth Development

• IntelliEPI has vast experience in IIIV mismatched growth

• Developed production mHEMT/GaAs with InAs composite channel (04)

• Engaged in IIIV-on-Si growth development since 2008

• IntelliEPI’s focuses on IIIV-on-Si:

–high mobility InGaAs channel–Thin buffer layer–Large sized wafer direct growth–Alternative buffer layer for defect elimination (Sb -based)–Pattern growth–Defect reduction scheme

• Goal: Active InxGaAs (x=0.7 to 1.0) channel grown almost directly on patterned Si with defects eliminated at edge without propagation to surface


Intelli EPI: IIIV QWFET/Si Development Summary

• QWFET structure of In.7Ga.3As QW layer grown on Si with 1.4um of GaAs and InAlAs buffer:

– 9600 cm2/V-sec Hall mobility and sheet carrier density of 2.5e12 /cm2 is achieved39

In0.53Ga0.47As cap: 3nm

In0.52Al0.48As barrier: 8nm

Si-Delta Doped

In0.52Al0.48As spacer: 4nm

In(x)Ga(1-x)As channel (x=0.53,0.7): ~10nm

In(x)Al(1-x)As buffer (x=0-0.52): 0.6~1.0um

GaAs buffer layer: ~0.5um

(100) 4o offcut p-type Si substrate

4000

5000

6000

7000

8000

9000

1 104

Mobility-2009 (cm2/v-sec)



Mob

ility

(cm

2/v-

sec)

2009 2010 2011


Intelli EPI: IIIV/Si QWFET Structure Comparison

• IET current IIIV-on-Si data is comparable with the best data reported by Intel/IQE in terms of hall mobility, AFM Rms, TEM.

0.2 µm

0.4 µm GaAs buffer

0.9 µm InAlAs buffer

In.53Ga.47As QW

Si

Buffer thickness

(um)

Hall Mobility

(cm2/v-sec)

Rms (5um×5um)

(nm)

IET MHEMT/Si 1.4 9000 1.58Intel MHEMT/Si 1.3 10000 3.9

IET MHEMT/GaAs 0.6 10400 4.46

IET MHEMT/Si Intel MHEMT/Si

IET MHEMT/GaAs

GaAs

0.6 µm InAlAs buffer


Intelli EPI: InP HEMT, mHEMT, QWFET/Si Mobility Comparison

• It is difficult to make comparable comparison due to difference in strain, surface condition, and 2DEG charge density

• The electron mobility in In.53GaAs grown on Si substrate is comparable to that similar HEMTs grown on InP substrate and GaAs substrate with same channel In composition

7000

7500

8000

8500

9000

9500

Mobility on InP substrate (cm2/v-sec)Mobility on GaAs substrate (cm2/v-sec)Mobility on Si substrate (cm2/v-sec)

Qua

ntum

Wel

l mob

ility

(cm

2/v-

sec)

InP sub Si subGaAs sub

Mobility comparison on different substrates (same s tructure)


Intelli EPI: InP SHBT/DHBT Status

Strong Customer Base Facilitates Fast Structure Optimization

• US and Japan OEM/ODM foundries/companies

• Both C and Be doped SHBTs and DHBTs

• HBT-PIN and HBT-Opto structure integration

In-House Large Area Device (LAD) Fabrication Capability

• Fast turn around (~8 hours)

• Correlation with customers device characteristics

• CV measurements to fine tune device growth parameters

• Correlation with in-house in situ growth database

Developed GaAsSb-base HBT under DARPA TFAST Program

• Supplied HBTs to all TFAST team�� many speed records

• GaAsSb-base InP DHBT in full production for comp-x

• Vitesse developed high yield processing for high speed circuits


Intelli EPI: InP-HBT Experience Highlights

IntelliEPI provides volume InP-based HBTs to US and Japan InP IC foundries • Production GaAsSb-base InP DHBTs for comp-A high frequency testing equipment

• SHBT and DHBTs for Japan comp-S HBT TIA, laser driver , and foundry services

• 100% transistor yield for VIP-2 DHBT: over 450 GHz Ft and Fmax (DARPA – TFAST)

Pohang University of Science and Technology (POSTECH): InP-HBT results• Fmax = 689 GHz (Postech/IntelliEPI, IEDM, San Francisco, 2004)

University of Illinois, Urbana Champaign: InP-HBT results• Most recent data: Ft = 710 GHz (Hafez et al. Appl. Phys. Lett., 87, 2005)

Emitter

Base

Collector

0.25 µµµµm

Emitter

Base

Collector

0.25 µµµµm


X-ray data of GaAsSb uniformity across 4x4” platen

-1500 -1000 -500 0 500 1000 1500

Diffaction Angle (arc-sec)

Inte

nsity

(ar

b un

its)

r = 118.5 mm

r = 113.5 mm

r = 98.5 mm

r = 78.5 mm

r = 58.5 mm

r = 43.5 mm

r = 38.5 mm

Center of Platen

Outside of platen

0.490

0.495

0.500

0.505

0.510

0.515

0.520

0 50 100

Position on Platen (mm)

Sb

Com

posi

ton

(x)

4 X 4" platen

5 X 3" platen

• GaAsSb composition uniformity is within ±0.1 atomic percent across 4x4” platen

4”


Uniformity of resistivity of carbon-doped GaAsSb on 4” InP

• Carbon doping uniformity is within 2.3% across 4” wafer


100% Transistor Yield attained!

All sites over 300 GHz Ft and Fmax (DHBT)

All sites functional and operational at high speed

RF measurements for 337595 w03for RFM0 device on all 37 die across 4" wafer

0

50

100

150

200

250

300

350

400

0 1 2 3 4 5 6

Jc (mA/ µµµµm2)

F o

r Fm

ax (G

Hz)

Ft

Fmax


Intelli EPI Wins Supplier Award from Skyworks 01/2011

IntelliEPI Win First Supplier Award from Skyworks Solutions * 2/10/2011

Richardson, TX -- IntelliEPI, the world’s leading MBE epi-wafers producer of pseudomorphic high mobility transistor (pHEMT) wafers for smart phones and other mobile devices, announced today that it received 2010 Supplier Award from Skyworks Solutions, Inc. The award was presented to IntelliEPI during Skyworks’ Supplier Day Conference, held January 11 in Newport Beach, Ca., for the supply of pHEMT epi-wafers to Skyworks’ Woburn, Ma. wafer fab. This is IntelliEPI’s first award in this category.

* IntelliEPI won Supplier awards from Vitesse Semiconductor from 01 to 04.


Intelli EPI: Summary

IntelliEPI’s real-time sensors monitor growth and maintain reproducible conditions

• Non-invasive; early identification of problems during run: immediate feedback

• Yield improvement, fast product development and delivery

IntelliEPI developed advanced MBE growth technology and materials

• High volume GaAs product such as PHEMTs for handset switch applications

• High performance InP based HBTs and PINs for fiber optical applications

IntelliEPI provides 100% customer satisfaction guaranty


END

49

121004 IET Intro for Nippon Oclaro · Q3/2012 Intelligent Epitaxy Technology, Inc. Intelli EPI:...

Documents

Transcript of 121004 IET Intro for Nippon Oclaro · Q3/2012 Intelligent Epitaxy Technology, Inc. Intelli EPI:...