11._15301600_Stragegic Approaches for MEMS Test_Semicon Taiwan 2011

8/3/2019 11._15301600_Stragegic Approaches for MEMS Test_Semicon Taiwan 2011

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MEMS COT Test Platform ModularitySingulated MEMS Test InMEMS Test

InPressure

Y, Z, X+Y

MT9928 InStrip

InPressure / InBaro

MT9320

Acceleration 3 axis

Acceleration high g

InGyro

Accelerometer 50g X, Y, Z, 45

Y, Z, X+Y

Accelerometer 100g X, Y, Z X, Y, Z

Accelerometer 3 axis low g Z+X, Z+Y InFlip

Gyroscope Const. Yaw Rate Sinusoidal Stimulus InGyro 6 DOF

Pressure 20 bar / 5 press. level InPressure

Magnetic Helmholz / Rot. Magnet Rot. Magnet InMagnet 2 DOF

Microphon InPhone

MEMSPlatforms

MEMS

Applications Key COT contributor: TEST PLATFORM MODULARITY


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Combined two axisrotation

of leadframeRotation Alpha-Axis

Electrical connectionvia flexible wiringfrom the DUT boardto the ATE

DUT-Board Indexing

Rotation Beta-AxisInFlip specification:

> 2 Axis, +/- 185 rotation angle both

> 600 / 1200 contact pins parallelfrom DUT to ATE (soft docking)

> Rotation speed: 180

/s> Rotation accuracy: +/- 0,1

> Temperature range: -40

C .. +125

C (at 600 contacts)

> Sub-indexing of strip in one direction (test complete rows)

> Full angle and Index control from ATE via GPIB (IEEE 488.2)

InFlip test moduleInFlip test = 3axis accelerometer test, low g


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InGyro9 Axis Motion MEMS Test

Architecture:

1. True 3 axis cardanic module

2. a + b axis:

- angular orientation of strip

- contact with 1200 pins

- tester resource board

3. g axis:

- vertical gyroscope drive axis

- 3 axis simultanious stimulus with

a + b at 45

position

4. Homogenous magnetic field in test area

9 Axis Motion MEMS Test = 3 Axis Gyroscope + 3 Axis low g Accelerometer + 3 Axis Compass


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Singulated IC Test InStrip IC Test

Applied forPatent

Combinedadvantages of Singulated andInStrip IC Test

InCarrier Singulated Device Carrier


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> Sheet-metal Sandwich architecture

> Spring layer is clamping the devices and

registering them precisely like on a strip

> 2D dot code providing ID for device tracking

InCarrier Basic Technology


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Contact imprintLGA 3x3, 0.5pitchon InCarrier .

Field proven device registrationin the carrier matrix withresulting contact accuracy:

Singulated devices with pitches of

0.5 mm and 0.4 mm can be contacted veryreliably and up to

256 devices in parallelin the InCarrier InStrip system. Contacting with about 32 m offset

socket and device tolerances to be added

3 * [m]

device to InCarrier fiducial 30fiducial to contact unit (InStrip) 12total (quadratic addition) 32

Device to Socket Position 99.7% Probability

250 m contact ball

device body

32 mMercury contact

InCarrier for Fine Pitch Devices


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Untested devices inJEDEC tray, tube,bulk, wafer frame

Untested devices inInCarrier

Tested devices inInCarrier

Tested devices inJEDEC tray, tube,bulk, tape & real

GEM HOST(Server)

InCarrier Process


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soak contact Create mapfile

Loader

Unloader

InStrip+(InMEMS) Handler

Multitest Solution

Licensed Partner Solution

bowl

wafer ring

lead frame

tray tube

tube

tray

T & R

InCarrier Process


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soak contact Creat

e mapfile

Loader

Unloader

InStrip+(InMEMS) Handler

bowl

wafer ring

lead frame

tray tube

tube

tray

T & R

Burn-In using

MT InCarrier sockets

Product Marking

(Laser mark)

InCarrier Process Options


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InCarrier Singulated Device Carrier Summary> InCarrier - Advantages

versus strip and singulated device test:

Robust Test-Handling

Smallest packages down to 1x1 mm WLP, WSP, CSP Test

Highest Parallel Test

Temperature Test

Various MEMS Test Applications

Burn-In / Bake Option

Test is Final Test 0 PPM

Full Traceability 0 PPM

Re-test with same tool setup

Kit-less handler with standardization of carrier size

Independence of assembly lead-frame layout

> InCarrier - is overcoming the constraints of strip test


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Thank you!

11._15301600_Stragegic Approaches for MEMS Test_Semicon Taiwan 2011

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