1 . T itle : Sensors and Memories Based on Nanoelectronic Devices

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1. Title : Sensors and Memories Based on Nanoelectronic Devices 2. Speaker : Dr. Wan Soo Yun (Korea Research Institute of Standards and Science) 3. Time : 16:00 – 17:30, Thursday, April 12 th , 2007 4. Place : e+ Lecture Hall (room 83188), 2 nd Research Building, Sungkyunkwan University 5. Summary : Extreme sensitivity of a nanodevice to its surroundings lets it become a promising candidate for the ultra-sensitive sensors and memories. A stable state which has been switched from another state of a nanodevice can be interpreted as an indication of the existence of a certain molecule in a molecular sensor or a code of information in a nanowire memory. In this talk, our recent results in the fabrication and characterization of nanodevice- based sensors and memories will be discussed. Particularly, studies on molecular nano sensors and ferroelectric nanowire memories will be introduced with their SGM and EFM characterizations, respectively. 6 Background : Education 1992 Chemistry Education, Seoul National University, B.S 1994 Chemistry, Seoul National University, M.S 2000 Chemistry, Seoul National University, Ph.D Work Experience 1996-1998 Visiting Researcher, Electronics and Telecommunications Research Institute 2000-2001 Postdoctoral Fellow, Harvard University 2001- Senior Research Scientist, Korea Research Institute of Standards and Science SEMINAR Sungkyunkwan Universit

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SEMINAR. 1 . T itle : Sensors and Memories Based on Nanoelectronic Devices 2. S peaker : D r. Wan Soo Yun (Korea Research Institute of Standards and Science) 3. T ime : 1 6 :00 – 17:30, Thursday, April 12 th , 2007 - PowerPoint PPT Presentation

Transcript of 1 . T itle : Sensors and Memories Based on Nanoelectronic Devices

Page 1: 1 .  T itle  :  Sensors and Memories Based on Nanoelectronic Devices

1. Title : Sensors and Memories Based on Nanoelectronic Devices

2. Speaker : Dr. Wan Soo Yun (Korea Research Institute of Standards and Science)

3. Time : 16:00 – 17:30, Thursday, April 12th, 2007

4. Place : e+ Lecture Hall (room 83188), 2nd Research Building, Sungkyunkwan University

5. Summary :

Extreme sensitivity of a nanodevice to its surroundings lets it become a promising candidate for the ultra-sensitive sensors and memories. A stable state which has been switched from another state of a nanodevice can be interpreted as an indication of the existence of a certain molecule in a molecular sensor or a code of information in a nanowire memory. In this talk, our recent results in the fabrication and characterization of nanodevice-based sensors and memories will be discussed. Particularly, studies on molecular nano sensors and ferroelectric nanowire memories will be introduced with their SGM and EFM characterizations, respectively.

6 Background :

Education 1992 Chemistry Education, Seoul National University, B.S 1994 Chemistry, Seoul National University, M.S 2000 Chemistry, Seoul National University, Ph.D

Work Experience 1996-1998 Visiting Researcher, Electronics and Telecommunications

Research Institute 2000-2001 Postdoctoral Fellow, Harvard University 2001- Senior Research Scientist, Korea Research Institute of

Standards and Science

SEMINAR

Sungkyunkwan University