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    Journal of Luminescence 122123 (2007) 639641

    Study of the characteristics of new red dopants in OLED

    Jing Xiaoa, Yishan Yaob, Zhenbo Denga,, Xuesong Wangb, Chun-jun Lianga

    aInstitute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, ChinabTechnical Institute of Physics and Chemistry of CAS, Beijing 100101, China

    Available online 20 March 2006

    Abstract

    New red dopants TDCJTB and TDIN have been synthesized for using as red fluorescent dye molecules in organic light-emitting diodes

    (OLEDs). Red-light-emitting devices have been fabricated with a structure of ITO/PVK: dopant/2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline (BCP)/Alq3/LiF/Al. The Commission International dEclairage (CIE) coordinates and PL peaks of the devices are [0.61,

    0.39], [0.62, 0.38] and 579, 597 nm, respectively. The maximum EL brightness of TDCJTB and TDIN reached 1311 cd/m2 (18V) and

    2497 cd/m2 (16 V), respectively. Compared with traditional DCM ([0.58, 0.41], 1032 cd/m2 (18V)) the two devices have better CIE

    coordinates and brightness. When TBQ is doped in these materials, the EL efficiency can both be improved at different level. Present

    research work shows that when TBQs concentration is 30%, the maximum EL efficiency TDCJTB and TDIN is 2.57 and 2.54 cd/A at

    40 mA/cm2, respectively.

    r 2006 Elsevier B.V. All rights reserved.

    Keywords: Oled; Red color; TDCJTB; TDIN; Efficient

    1. Introduction

    Organic light-emitting devices (OLEDs) have attracted

    much attention owing to their advantages of low-power

    consumption, high brightness, high contrast and potential

    applications to full color flat panel displays [1]. But the red

    color OLED due to its low efficiency, poor color purity,

    remains to be the weakest part in realizing the full potential

    of full color OLED. One of the key enablers in the

    development of OLED technology can be attributed to the

    discovery of the guesthost doped emitter system [2]. By

    dispersing 5% of rubrene as a red emitting assist dopant

    with 2% DCJTB in Alq3, Hamada and coworkers at Sanyo

    [3] were able to achieve a luminance efficiency of 2.1 cd/A

    with CIEx,y [0.64, 0.35]. Subsequently, the Sanyo/Kodakteam discovered [4] that by adding 6% of NPB as hole-

    trapping dopant to the above emitting system, its efficiency

    could be further improved to 2.8 cd/A at 20 mA/cm2 and a

    red chromaticity coordinate of CIEx,y [0.65, 0.34] was

    also obtained.

    In this work, we synthesized two new red fluorescent

    dopants and applied it in the fabrication of OLEDs. ThePL and EL properties of devices utilizing red dopants

    dispersed PVK as light-emitting layer were studied. At the

    same time, we doped the dopants in co-host emitter (CHE)

    [5] systems of TBQ/PVK. It showed that by adjusting the

    ratio of these two host emitters, the EL efficiency,

    luminance as well as color can be dramatically improved.

    2. Experimental

    New red dopants TDCJTB and TDIN have been

    synthesized for using as red fluorescent dye molecules inOLED. They were designed and synthesized via piperidine

    -catalyzed condensation of aldehyde with 4-(dicyanomethy-

    lene)-2-(t-butyl)-6-methyl-4H-pyran or 4-(10, 30-indandione)

    -2-(t-butyl)-6-methyl-4H-pyran in good yields. The molecule

    structures of these are shown in Fig. 1.

    We used PVK as host material in order to get the film-

    forming possibility and conductivity of their mixture. The

    emitting layer was made by spin coating, which can

    avoid the thermal decomposition caused by the thermal

    evaporation.

    ARTICLE IN PRESS

    www.elsevier.com/locate/jlumin

    0022-2313/$ - see front matterr 2006 Elsevier B.V. All rights reserved.

    doi:10.1016/j.jlumin.2006.01.247

    Corresponding author. Tel.: +86 10 51688675; fax: +86 10 51683933.

    E-mail address: [email protected] (Z. Deng).

    http://www.elsevier.com/locate/jluminhttp://localhost/var/www/apps/conversion/tmp/scratch_4/dx.doi.org/10.1016/j.jlumin.2006.01.247mailto:[email protected]:[email protected]://localhost/var/www/apps/conversion/tmp/scratch_4/dx.doi.org/10.1016/j.jlumin.2006.01.247http://www.elsevier.com/locate/jlumin
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    In this work two kinds of devices were fabricated: (1)

    Glass/ITO/PVK: dopant/BCP/Alq3/LiF/Al; (2) ITO/CHE

    (70 nm)/BCP (20 nm)/Alq3 (15 nm)/LiF (0.3nm)/Al

    (150 nm). The CHE consists of a mixture of TBQ/PVK

    doped with a series of red fluorescent dyes (10%). The

    light-emitting film of CHE was prepared by spin coating

    their chloroform solution onto ITO glass substrate (with a

    sheet resistance of 20O/&). And then hole-blocking

    material (BCP), electron-transporting material(Alq3), LiF,

    Al were deposited onto the emitting layer by a conven-

    tional thermal evaporation method at a chamber pressure

    of about 3 103 Pa. Prior to organic deposition, the ITO-

    coated glass plate was thoroughly cleaned by scrubbing,

    sonication, vapor degreasing and oxygen plasma treat-

    ment. The deposition rates were maintained to be 0.05, 0.05

    and 0.02 nm s1 for BCP, Alq3 and LiF, respectively. The

    thickness of each layer was monitored by a quartz

    oscillating thickness monitor (IL-400). LiF was deposited

    onto an electron transport layer (ETL) as an electron

    injection material [6]. The PL and EL spectra were

    measured by the Fluolog-3 fluorescent spectrometer, and

    the brightness was measured by PR-650. All the measure-

    ments were carried out in ambient atmosphere at room

    temperature.

    3. Results and discussion

    The results are shown in Fig. 2. The PL peaks of

    TDCJTB, TDIN and TBQ were 579, 597 and 459 nm,

    respectively. The properties of monolayer device(ITO/

    PVK: dopant /LiF/Al) with the swing film rate of

    1000 r/min(70 nm) and the weight ratio of 1:10 (dopant:

    PVK) were best. Bright red emission could be obtained

    from this device and the blue light of PVK could not be

    seen. This indicated that emission of the red dopants

    originate from the excitation of PVK. The EL peaks of

    TDCJTB, TDIN and DCM are 603, 607 and 598 nm,

    respectively.

    Bright red emission could be obtained from the

    optimized double-layer device ((1) ITO/PVK: dopant /

    BCP/Alq3/LiF/Al). The devices with 20 nm-thick blocking

    layer (BCP) showed only the light emission from the red

    ARTICLE IN PRESS

    N

    OO

    NC

    O

    CN

    CN

    NC CN CN

    TDCJTB

    N

    OO

    O O OO

    O O

    O

    TDIN

    N

    TBQ

    Fig. 1. Molecular structures of TDCJTB, TDIN, TBQ.

    20 0 2 50 30 0 3 50 40 0 4 50 50 0 5 50 6 00 6 50 7 00 7 50

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    PLIntensity(a.u.)

    Wavelength (nm)

    TDCJTBTDINTBQ

    (a)

    300 350 400 450 500 550 600 650 700 750

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    Intensity(a.u.)

    Wavelength (nm)

    TDCJTBTDINDCM

    (b)

    Fig. 2. PL spectra of TDCJTB, TDIN and TBQ and EL spectra of TDCJTB, TDIN and DCM.

    J. Xiao et al. / Journal of Luminescence 122123 (2007) 639641640

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    dopants. This indicates that the BCP layer with 20 nm

    thickness could completely block the holes flowing to the

    Alq3 layer, and the Alq3 layer in this device only functions

    as electron-transporting layer. The Commission Interna-

    tional dEclairage (CIE) coordinates was [0.61, 0.39], [0.62,

    0.38]. Compared with traditional DCM ([0.58, 0.41]) the

    two devices have better CIE coordinates.

    EL spectra at different voltages of the double-layer

    device for TDCJTB and TDIN showed that with increasing

    driven voltage the emission that came from the red dopants

    were intensified, yet the locations of the peaks were not

    modified.

    Fig. 3 (a) showed the characteristics of brightness versus

    voltage of device (2). From this figure we could see thehighest EL brightness of TDCJTB and TDIN reached

    1311 cd/m2 at the applied voltage of 18 V and 2497 cd/m2 at

    the applied voltage of 16 V, respectively. Compared with

    traditional DCM (1032 cd/m2 at applied voltage of 18 V)

    the two devices have higher brightness.

    In order to enhance the properties of the device, we add

    TBQ as co-host to the emitting layer. Experiments showed

    that when TBQs concentration is 30%, the properties of

    the device were best. The highest EL brightness of

    TDCJTB and TDIN reached 2080 cd/m2 at the voltage of

    18 V and 4676 cd/m2 at the applied voltage of 17V,

    respectively. The maximum EL efficiency TDCJTB and

    TDIN is 2.57 and 2.54 cd/A at 40 mA/cm2, respectively

    (Fig. 3(b)). From EL spectra of TDCJTB and TDIN with

    30% TBQ in PVK of 10% red dopants doped CHE device,

    we could not see the emitting light from TBQ, but the

    intensity of red light was increased. So TBQ might act as a

    bridge in the process of energy transfer. This might indicate

    that some emission of red dopants originate from the

    excitation of PVK and some emission of red dopants

    originated from the excitation of TBQ.

    4. Conclusions

    In summary, new red dopants TDCJTB and TDIN have

    been synthesized for using as red fluorescent dye molecule

    in OLEDs. By using BCP as holes block layer the OLEDs

    has been fabricated. The CIE coordinates and PL peaks of

    the devices are [0.61, 0.39], [0.62, 0.38] and 579, 597 nm,

    respectively. The highest EL brightness of TDCJTB and

    TDIN reached 1311 cd/m2 (18 V) and 2497 cd/m2 (16 V),

    respectively. Compared with traditional DCM ([0.58, 0.41],

    1032 cd/m2 (18 V)) the two devices have better CIE

    coordinates and brightness. When TBQ is doped in these

    materials the EL efficiency can both be improved at

    different level. Present research work shows that whenTBQs concentration is 30%, the maximum EL efficiency

    TDCJTB and TDIN is 2.57 and 2.54 cd/A at 40 mA/cm2,

    respectively.

    Acknowledgements

    This work was supported by National Natural Science

    Foundation of China (under contract no.90201004), and

    Beijing Science & Technology Foundation ( under contract

    no. H030430020410).

    References

    [1] C.W. Tang, S.A. VanSlyke, Appl. Phys. Lett. 51 (1987) 913.

    [2] C.W. Tang, S.A. VanSlyke, C.H. Chen, Appl. Phys. 65 (1989) 3610.

    [3] Y. Hamada, H. Kanno, T. Tsujioka, H. Takahashi, T. Usuki, Appl.

    Phys. Lett. 75 (1999) 682.

    [4] T.K. Hatwar, G. Rajeswaran, J. Shi, Y. Hamada, H. Kano, H.

    Takahashi, in: Proceeding of EL00, Hamamatsu, Japan, p. 31,

    December 2000.

    [5] T.H. Liu, C.Y. Iou, C.H. Chen, Curr. Appl. Phys. 5 (2005) 218221.

    [6] L.S. Hung, C.W. Tang, M.G. Mason, Appl. Phys. Lett. 70 (1997) 152.

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    0 2 4 6 8 10 12 14 16 18 20

    0

    500

    1000

    1500

    2000

    2500

    3000

    ELBrightne

    ss(cd/m2)

    Voltage (V)

    TDCJTB

    TDIN

    DCM

    (a)

    4 6 8 10 12 14 16 18 20

    0.5

    1.0

    1.5

    2.0

    2.5

    ELEfficie

    ncy(cd/A)

    Voltage (V)

    TDCJTB

    TDIN

    (b)

    Fig. 3. Brightness (a) and EL efficiency (b) curves vs. applied voltage of red OLED doped.

    J. Xiao et al. / Journal of Luminescence 122123 (2007) 639641 641