1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples...

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1 Investigation on Investigation on ealing effect in a Suprasil sample a ealing effect in a Suprasil sample a loss measurements in silicon samples loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007 Elisabetta Cesarini Elisabetta Cesarini a,b) , Gianpietro Cagnoli a,c) , Enrico Campagna a,d) , Matteo Lorenzini a,b) , Giovanni Losurdo a) , Filippo Martelli a,d) , Francesco Piergiovanni a,d) , Flavio Vetrano a,d) a) INFN Sez. Firenze b) Università di Firenze (Dip. Astronomia e Scienza dello Spazio) c) University of Glasgow d) Università di Urbino

Transcript of 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples...

Page 1: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

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Investigation on Investigation on annealing effect in a Suprasil sample and annealing effect in a Suprasil sample and

loss measurements in silicon samplesloss measurements in silicon samples

4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Elisabetta CesariniElisabetta Cesarini a,b), Gianpietro Cagnoli a,c), Enrico Campagna a,d), Matteo Lorenzini a,b), Giovanni Losurdo a), Filippo Martelli a,d),

Francesco Piergiovanni a,d) , Flavio Vetrano a,d)

a) INFN Sez. Firenzeb) Università di Firenze (Dip. Astronomia e Scienza dello

Spazio)c) University of Glasgowd) Università di Urbino

Page 2: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

24° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Summary

Now:

We are measuring the loss angle of different interesting materials:•Herasil

•Suprasil (annealed sample, that we are investigating with surface analysis)

•Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements)

Now:

We are measuring the loss angle of different interesting materials:•Herasil

•Suprasil (annealed sample, that we are investigating with surface analysis)

•Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements)

Last ILIAS-GW meeting 26-27 October 2006 we presented:

Q measurement facilityInnovative nodal suspension, designed and realized (GeNS)

Last ILIAS-GW meeting 26-27 October 2006 we presented:

Q measurement facilityInnovative nodal suspension, designed and realized (GeNS)

Page 3: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

34° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Dissipation measurements on Suprasil samples

4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

-13

0

13

-13

0

13

1,72E+071,75E+07

1,71E+071,75E+07

1,79E+071,81E+071,74E+07

1,72E+071,75E+07

0,00E+00

5,00E+06

1,00E+07

1,50E+07

2,00E+07

Q v

alu

e

x [mm]

y [mm]

Q-value @3469 Hz (lower frequency)(75x3 mm Suprasil disk and D_sphere= 4.75 mm)

SAMPLE:Suprasil 311 disk 75x3 mmSapphire sphere D= 4.75 mm

SAMPLE:Suprasil 311 disk 75x3 mmSapphire sphere D= 4.75 mm

3469 Hz1° Butterfly mode

3469 Hz1° Butterfly mode

Contact surface (radius 20 Contact surface (radius 20 mmm)m)Contact surface (radius 20 Contact surface (radius 20 mmm)m)

7890 Hz2° Butterfly mode

7890 Hz2° Butterfly mode

Q-value (in milions+/-5%) @3469 Hz (lower frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)

18,1

17,1

17,5

17,2

17,5

17,4

17,9

17,2

17,5

-30

-20

-10

0

10

20

30

-30 -20 -10 0 10 20 30

x displacement [mm]

y d

isp

lace

men

t [

mm

]

Q-value (in milions +/- 5%) @7890 Hz (higher frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)

11,7

11,7

12,4

12,2

11,7

11,7

11,1 12,0

11,9

-30

-20

-10

0

10

20

30

-30 -20 -10 0 10 20 30

x displacement [mm]

y d

isp

lace

men

t [m

m]

-130

13

-13

0

13

1,17E+07

1,17E+071,22E+071,17E+07

1,17E+071,24E+07

1,11E+071,20E+07

1,19E+07

0,00E+00

2,00E+06

4,00E+06

6,00E+06

8,00E+06

1,00E+07

1,20E+07

1,40E+07

Q v

alu

e

x[mm]

y[mm]

Q-value @7889 Hz (higher frequency) (75x3 mm Suprasil disk and D_sphere= 4.75 mm)

Q does not d

epend on suspension cente

ring,

in a single su

spensio

n, in th

e region betw

een

-30μm e +

30μm with

a contact

surfa

ce of ~

20 μm

Page 4: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

44° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Dissipation measurements on Suprasil samples

First measurement:Q(3469Hz)=2.7·1

06

Measurement after the annealing:

Q(3469Hz)=2·10Q(3469Hz)=2·1077

Anneal in air (suggested by

S.Penn):

-Raise the oven temperature to the annealing point (1120°C for Suprasil)

- Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour

-Turn off the oven and wait for cool down in 24 hours

Anneal in air (suggested by

S.Penn):

-Raise the oven temperature to the annealing point (1120°C for Suprasil)

- Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour

-Turn off the oven and wait for cool down in 24 hours

V/S = 1.3875 μm φPenn = 2 · 10-8

QPenn = 50 millions Qexp = 20 millions

V/S = 1.3875 μm φPenn = 2 · 10-8

QPenn = 50 millions Qexp = 20 millions

Taken from Mechanical Loss in Fused SilicaSteve Penn

Hobart and William Smith CollegesLSC Meeting, March 2006

LIGO DCC LIGO-G0601 40-00-Z

Taken from Mechanical Loss in Fused SilicaSteve Penn

Hobart and William Smith CollegesLSC Meeting, March 2006

LIGO DCC LIGO-G0601 40-00-Z

FI samples

Similar samples

it is smaller by a factor two!!

Page 5: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

5Binding Energy

(eV)

cou

nts

/s

4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Annealing study

Is the Q value increasing due to an internal or a surface effect?Is the Q value increasing due to an internal or a surface effect?

Surface Analysis In collaboration with:

INFN sezione Genova and Università di Genova

Surface Analysis In collaboration with:

INFN sezione Genova and Università di Genova

Ellipsometry and XPSEllipsometry and XPSEllipsometry and XPSEllipsometry and XPS

… st

ill un

der i

nves

tigat

ion …

Page 6: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

64° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Dissipation measurementson silicon samples

Samples:•75x1 mm•75x3 mm sapphire sphere (d=4.76 mm)•75x10 mm sapphire sphere (d=15-20 mm)

Samples:•75x1 mm•75x3 mm sapphire sphere (d=4.76 mm)•75x10 mm sapphire sphere (d=15-20 mm)

RESULT SUMMARY

Bad reproducibility of measurements

in different suspensions

Bad reproducibility of measurements

in different suspensions

CLEANING PROCEDUREWe have to work in a

clean room!!!

CLEANING PROCEDUREWe have to work in a

clean room!!!

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Taking into account only the maximum values …

4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Dissipation measurementson silicon samples

Q value vs frequency(75x3 mm silicon disk, sapphire sphere Rc=4.76 mm)

0,00E+00

5,00E+05

1,00E+06

1,50E+06

2,00E+06

2,50E+06

3,00E+06

3,50E+06

4,00E+06

0 5000 10000 15000 20000 25000frequency [Hz]

Max

Q-v

alue

5155 Hz 1st butterfly mode

11781 Hz 2nd butterfly mode

20353 Hz 3r butterfly mode

Q value vs frequency(75x10 mm silicon disk, sapphire sphere Rc=15 mm)

0,00E+00

2,00E+06

4,00E+06

6,00E+06

8,00E+06

1,00E+07

1,20E+07

1,40E+07

1,60E+07

1,80E+07

0 10000 20000 30000 40000 50000 60000frequency [Hz]

Max

Q-v

alue

14730 Hz 1st butterfly mode

31551 Hz 2nd butterfly mode

50906 Hz 3rd butterfly mode

WHAT IS

HAPPENIN

G?

Page 8: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

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ADIABATIC APPROXIMATION:The T is not influenced by heat fluxesADIABATIC APPROXIMATION:The T is not influenced by heat fluxes

4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Thermoelastic contributioncalculation

Thermoelastic contribution for a disk of finite dimensionsThermoelastic contribution for a disk of finite dimensions

Previous calculations :- F. Bondu, P. Hello, J.Y. Vinet, Phys. Lett A 246 (1998) 227-Y.T. Liu and K.S. Thorne, Phys. Rev. D 62 (2000) 122002- V. B. Braginsky, M.L. Gorodetski, S.P. Vyatchanin, Phys Lett. A 264 (1999) 1

Previous calculations :- F. Bondu, P. Hello, J.Y. Vinet, Phys. Lett A 246 (1998) 227-Y.T. Liu and K.S. Thorne, Phys. Rev. D 62 (2000) 122002- V. B. Braginsky, M.L. Gorodetski, S.P. Vyatchanin, Phys Lett. A 264 (1999) 1

What is our idea?What is our idea?

How to solve the problem of the sources in a non-adiabatic

condition for a cristalline material?

How to solve the problem of the sources in a non-adiabatic

condition for a cristalline material?

We want to calculate exactly the thermoelastic contribution without any approximation

We want to calculate exactly the thermoelastic contribution without any approximation

We want to simulate the vibrations of the disk with ANSYSANSYS, then take

the time derivative of the deformations and put them in the diffusion heat equation.

We want to simulate the vibrations of the disk with ANSYSANSYS, then take

the time derivative of the deformations and put them in the diffusion heat equation.

… work in

progress …

Page 9: 1 Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples 4° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9,

94° ILIAS-GWA Annual Meeting - Tubingen (D), October 8-9, 2007

Next work…

1. New surface analysis after the annealing, trying to understand if the produced effect is internal or superficial.

2. Calculation of the thermoelastic contribution in silicon disks, without any approximation.

3. New loss measurements of the silicon samples with different thickness (in collaboration with Jena University).

4. Measurements of mechanical properties of coated samples suitably altered or damaged.

1. New surface analysis after the annealing, trying to understand if the produced effect is internal or superficial.

2. Calculation of the thermoelastic contribution in silicon disks, without any approximation.

3. New loss measurements of the silicon samples with different thickness (in collaboration with Jena University).

4. Measurements of mechanical properties of coated samples suitably altered or damaged.

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Thanks for your attentionThanks for your attention