1. ELECTRONICS DEVICE.pdf
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Instructor : Dr.Eng. Arief UdhiartoSource :U.C. Berkeley
ELECTRONICS DEVICE
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Electrical Engineering Department
University of Indonesia 2
Schedule
Lectures: S.201 Th. 08:00-09.50 AM
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Reading Material
Primary Text :Semiconductor Device Fundamentals : R. F. Pierret
(Addison Wesley, 1996)
References Text: Solid State Electronic Devices 4thEdition: B. G.
Stretman, S. Banerjee (Prentice Hall, 2000) Device Electronics for Integrated Circuits3rd
Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)
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SAP
1. Course : Electronics Device
2. Course Code : ENEE610007 SKS: 2 Semester: 33. Instructor : Dr.Eng. Arief Udhiarto (AU)
4. Class System : Single
5. Courses Objective : the completion of this course, students areexpected to be able to understand principle ofelectronic devices.
6. Grading System (%) : Homework (10), MT (35),Seminar (15), FT (40)
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Miscellany
Academic (dis)honestyDepartmental policy will be strictly followedCollaboration (not cheating!) is encouraged
Classroom etiquette:Arrive in class on time!Turn off cell phones, MP3/MP4 players, etc.No distracting conversations
Ask question as much as possible
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Pre Test
1. What do you know about the followingterm:1. electron
2. hole3. donor4. acceptor5. majority carrier
2. What are the differences betweenconductor and semiconductor? 10 Minutes only
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Course Outline
Semiconductor Fundamentals;
Metal-Semiconductor Contact
PN-Junction Diode
Bipolar Junction Transistor
MOSFETIC Processing
(other subject)
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Overview of IC Devices and
Semiconductor Fundamentals
Reading Assignment : Pierret Chap 1, Chap 2
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An IC consists of interconnected electroniccomponents in a single piece ( chip ) ofsemiconductor material
In 1958, Jack S. Kilby (Texas
Instruments) showed that it was
possible to fabricate a simple IC in
germanium.
In 1959, Robert Noyce (Fairchild
Semiconductor) demonstrated an ICmade in silicon using SiO2 as the
insulator and Al for the metallic
interconnects.
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Evolution of Bipolar Junction Transistors
Point Contact BJT1947
SiGe BJT2000 Si Nanowire BJT
2003
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From a Few, to Billions
By connecting a large number of components, eachperforming simple operations, an IC that performs verycomplex tasks can be built.
The degree of integration has increased at anexponential pace over the past ~40 years.
The number of devices on a chip doubles every ~18 months, forthe same price.
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IC Technology Advancement
Improvements in IC performance and cost havebeen enabled by the steady miniaturization ofthe transistor
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Advantages of Technology Scaling
More dies per wafer, lower cost
Higher-speed devices and circuits
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The Nanometer Size Scale
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State-of-the-art Transistor Size
1m = 10-6m = 10-4 cm = 1000 nm 1 nm =10
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CZ Crystal Growth
Si B lk W f S ifi ti B lk W f
http://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTM -
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Si Bulk Wafer Specifications Bulk Wafer
Specifications
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Purity of Device Grade Si
99.999999999 % (so-called eleven nines ) Maximum impurity allowed is equivalent to 1
mg of sugar dissolved in an Olympic-sizeswimming pool.
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Flatness deviation and particle sizes
Dimensions are equivalent to 1/1000 of a baseballplaced inside a sports dome.
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Crystallographic Planes
Mill I di
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Miller Indices
Crystallographic Notation
h: inverse x-interceptk: inverse y-intercept
l: inverse z-intercept(Intercept values are in multiples of the lattice constant;h, k and l are reduced to 3 integers having the sameratio.)
Crystallographic Planes and Si
http://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/kristalograpi2.htm -
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Crystallographic Planesand Si
Wafers
Silicon wafers are usually cut along the (100)plane with a flat or notch to orient the waferduring IC fabrication
http://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/kristalograpi2.htm -
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Bulk Si Wafer to IC Chip
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Bohr Model
http://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/hidrogen2.htmhttp://localhost/var/www/apps/2007%20Sep%20-%202008%20Agt/Genap/bab1/bab1/hidrogen2.htm -
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Silicon Atom
1s, 2s, 2p orbitals filled by 10
electrons 3s, 3p orbitals filled by 4
electrons
4 nearest neighborsunit cell length = 5.435 1022atoms/cm3
diamond cubic structure
The Si Atom The Si Crystal
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Conduction Band and Valence Band
ElectronPotentialEnergy
The Simplified Energy Band
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The Simplified Energy Band
Diagram
S i d t I l t d
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Semiconductors, Insulators, and
Conductors
Totally filled band and totally empty bands do not allow
current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
Metal conduction band is half-filled Semiconductors have lower Egs than insulators and
can be doped
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Compound Semiconductors
Zincblende Structure
III-V compound semiconductors : GaAs, GaP, GaN, etc.
important for optoelectronics and high speed ICs
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Density of States
Density of States at Conduction Band:
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Density of States at Conduction Band:
The Greek Theater Analogy
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Concept of a hole
An unoccupied electronic state inthe valence band is called a hole
Treat as positively charge mobile particle in the semiconductors
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Bond Model of Electrons and Holes
El d H l
http://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM -
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Electrons and Holes
http://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM