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IC LAYOUT ENGINEERING
Introduction
to
Microelectronics
DAY ~ 2
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Evolution Of Microelectronics
1947: Three scientists at Bell Telephone Laboratories, WilliamShockley, Walter Brattain, and John Bardeen demonstrate the firsttransistor :
1955: Frosch and Derick at Bell Labs patent the diffusion furnace anddevelop SiO2 passivation layers for silicon transistors
1955: Andrus and Bond at Bell Labs pattern oxide layers withphotolithography
1957: Lantrop and Nall (US Army) Pattern 200um leads to connectdiscrete transistors
1958: Last and Noyce develop the first step and repeat cameras for lithographic processing at Fairchild
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1957/1958: Jean Hoerni at Fairchild conceptualizes the first planer fabrication process for pn junctions using oxide barriers to protect pn
junctions underneath. Allowed all of the circuitry required for transistor fabrication to be patterned on 1 side of the wafer.
1959: Fairchilds Robert Noyce patents the monolithic IC that tiestransistors, capacitors, resistors together using micro lithographicallypatterned aluminum leads deposited on top of Heornis protectivecoating.
1960:Fairchild sells planer npn transistor device utilizing SiO2 barrier oxide for passivation that was patterned using a lithographic fabricationprocess
1960: Fairchild demonstrates the first IC with 4 transistors and 5resistors
1961 GCA Corporation commercializes the step and repeat reduction
device for optical lithography
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Evolution Of Microelectronics (cont.)
1960: First MOS transistor
1960: Ian Ross of Bell Labs uses CVD to between the substrate andthe collector to raise breakdown voltage and significantly increase thespeed of the circuit
1961: Hoerni demonstrates Silicon transistor that exceeds Geswitching speeds: Computers take off!!
1963: San and Wanlass of Fairchild showed that p and n channelMOS transistors arranged into a complementary circuit (CMOS) drewclose to zero power in standby mode
1964: Standard logic IC families introduced
1964: General Microelectronics releases the first commercial MOS IC
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MOS FET Structure
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Evolution Of Microelectronics (cont.)
1965: Fairchilds Director Gordon Moore introduces Moores law whichaccurately predicts the exponential increase of transistor density in anIC and provides a guide for technological progression that is still in usetoday
NSF is now preparing for the demise of Moores law reached thelimits of optical lithography Single bit logic is fading to quantumcomputing and the q bit
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Moores Law 1965: Fairchilds Director Gordon Moore introduces Moores law which
accurately predicts the exponential increase of transistor density in anIC and provides a guide for technological progression that is still in usetoday
NSF is now preparing for the demise of Moores law
reached the limits of optical lithography Single bit logic is fading toquantum computing and the q bit
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Evolution Of Microelectronics (cont.)
1964: Multi chip SLT packaging technology introduced by IBM1965: Fairchild Engineers develop Dual In Line (DIP) chip packaging1966: Semiconductor bipolar RAM 1966/1967: Computer aided design leads to Application Specific IC(ASIC)
1967: Turnkey equipment supplies such as Applied Materials introducecommercial tooling1969: Intel enters the scene with commercial tooling, silicon gatetechnology, and embedded metallic leads
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1966 : First 256K Bipolar Ram 1971 : Intels 1stMicroprocessor: i4004
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Design Of Performance Parameters
Physical : Area , Size , Weight
Power : Dissipation/Consumption
Speed : Timing
Noise : Cross talk
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THE GOAL OF ASIC DESIGNER
Meet the market requirement Satisfying the customer need Beating the competition Increasing the functionality Reducing the cost
Achieved by Using the next generation Silicon
Technologies New Design concept and Tools High Level Integration
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Power
Cost
Delay
Smaller is Better
THE PERFORMANCE CUBE
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VLSI TECHNOLOGY
Backbone for all IT advancements. A Technology solution and not a product.Packages lot of circuitry ( Millions of Gates] MiniaturisationConfidentiality Low power operation
Hand held battery operated gadgets
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APPLICATIONS
High Performance computing
Datacom/ Networking
Telecom/MOBILE/CELL/ WIL
Multimedia
Smart Cards
Remote Controls
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ADVANTAGES OF VLSI
REDUCTION IN
Design cycle time
Product Size
Power Consumption
Cost
INCREASE IN
Speed
Design Security
Productivity
Design Flexibility
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MOORES LAW
In 1969, Gorden Moore stated that SiliconTechnology will double the number of transistors per chip every 18 months!!!
Gordon MooreIntel Co-Founder and Chairmain Emeritus
Image source: Intel Corporation www.intel.com
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MOORES LAW
In 1969, Gorden Moore stated that SiliconTechnology will double the number of transistors
per chip every 18 months!!!
And it is happening ! ! ! ! ! ! !!!!!!!!
Now Moores law has become self sustani ng
Gordon MooreIntel Co-Founder and Chairmain Emeritus
Image source: Intel Corporation www.intel.com
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INTEGRATION LEVEL
Year Types gates per chip
60s - SSI : small-scale integration ~10
70s MSI: medium-scale integration ~100 1K
80s - LSI: large-scale integration ~1K 10K
90s - VLSI: very large-scale integration ~10K 100K
ULSI: ultra large scale integration ~1M 10M upwards
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Shrinking of Technology
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Shrinking of Technology
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Shrinking of Technology
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Shrinking of Technology
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Shrinking of Technology
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Shrinking of Technology
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Shrinking of Technology
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Gate & Interconnect Delays with shrinking
0.651989
0.51992
0.351995
0.251998
0.182001
0.132004
0.12007
0
5
10
1520
25
30
35
40Gate delayInterconnect delay
Source: SIA Roadmap 1997
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Technology Directions
Year 1999 2002 2005 2008 2011 2014
Feature size (nm) 180 130 100 70 50 35Mtrans/cm 2 7 14-26 47 115 284 701
Chip size (mm 2) 170 170-214 235 269 308 354
Signal pins/chip 768 1024 1024 1280 1408 1472
Clock rate (MHz) 600 800 1100 1400 1800 2200Wiring levels 6-7 7-8 8-9 9 9-10 10
Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.6
High-perf power (W) 90 130 160 170 174 183
Battery power(W) 1.4 2.0 2.4 2.0 2.2 2.4
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Over View
Of
VLSI DESIGN METHODOLOGY
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VLSI - OVERVIEW
Customer Specification
Semi -CustomASIC
Gate ArrayASIC
FPGA
ASIC
VLSITECHNOLOGY
FullCustom
ASIC
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Silicon Manufacturing Alternatives
Standard Components Application Specific ICs
Fixed Application
Applicationby Programming
SemiCustom
SiliconCompilation
FullCustom
LogicFamilies
HardwareProgramming
(MASK)
SoftwareProgramming
TTLCMOS
PLAROM
Microprocessor EPROM,EEPROM
PLD
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Design Styles
Complexity of VLSI circuits
Full custom
Performance Size Cost Market time
Standard Cell Gate Array FPGA
Different design styles
Cost ,Flexibility,Performance
( )
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VLSI - OVERVIEW (cont )Customer Specification
Semi -CustomASIC
Gate ArrayASIC
FPGAASIC
Full Custom ASIC
Logic Design/Front End
Gate Level
Net List
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behavioral 13
Blocking assignment
always @ (A1 or B1 or C1 or M1)// blocking assignments
begin: BLOCK_COMBM1 = #3 (A1 & B1);Y1 = #1 (M1 | C1);
end
A1
B1
C1
M1
Y1
3 1
LOGIC DESIGN
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VLSI - OVERVIEW
Customer Specification
Semi -CustomASIC
Gate ArrayASIC
FPGAASIC
FullCustom
ASIC
Logic Design/Front End
Physical Design/Back End
Gate Level
Net List
Physicallayout
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PHYSICAL
DESIGN
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FOUNDRY Masks
Si wafer
Chemicals
ProcessedWafer
Chips
FinishedASIC
ASICprocessing
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ASIC
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Design Summary
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Design Functional Parameters
ApplicationsSystem On Chip
Mobile Communications
Networking
Space/Automobile applications
Signal Processing
Remote Sensing
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Examples :
SSI : All 74 XX ,54 XX series gates
MSI: Decoders, mux, shift registers, counters etc.
LSI: Memories, 8bit UPs/ UCs ,Peripheral devises etc
VLSI : X86 to pentium,memories,and fpgas & ASICs
ASIC Products
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Applications Growth.
1971 : Intel 4004 - 2300 transistors, 1 MHzclock
Ultra Sparc III - 16 Million transistors
2001 : Intel P4 - 42 Million, 2 GHz clock
HP PA-8500 - 140 Million transistor
Amazingly visionary million transistor/chip barrier was crossed in the 1980s
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Design Characteristics
0.13M12MHz1.5 um
CAESystems,Silicon
compilation
7.5M333MHz0.25 um
Cycle-basedsimulation,
FormalVerification
3.3M200MHz
0.6 um
Top-DownDesign,
Emulation
1.2M50MHz0.8 um
HDLs,Synthesis
0.06M2MHz
6um
SPICESimulation
Key CAD Capabilities
The Challenges to sustain such an exponential growth to achievegigascale integration have shifted in a large degree, from the process of manufacturing technologies to the design technology .
VLSI Technology Trend
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Intel Pentium (IV) Microprocessor
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Technology 0.1 umTransistors 200 MLogic gates 40 MSize 520 mm 2
Clock 2 - 3.5 GHzChip I/Os 4,000Wiring levels 7 - 8Voltage 0.9 - 1.2Power 160 WattsSupply current ~160 Amps
PerformancePower consumption
Noise immunityAreaCostTime-to-market
Tradeoffs!!!
The VLSI Chip in 2006
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Design Abstraction Levels
DEVICE
n+S D
n+
G
CIRCUIT
Vout Vin
CIRCUIT
Vout Vin
GATE
MODULE
+
SYSTEM
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VLSI TECHNOLOGY
Encompasses different Design Domains:
Logic Design - As Code
Physical design - As Layout
Product Fabrication - As product
DESIGN METHODOLOGIES- Y CHART
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TTM Institute of Technology 52Circuit abstraction level
Micro architectureabstraction level
ogic abstraction levelSystem abstracti
level
Ph ysical domain
STRUCTURAL DOMAIBEHAVIORAL DOMAIN Synthesis
Chips.MCM,boards
CellsChips / modules
Layout transistor
Transistors
Logic gates ALUs , registers
processors
instructionsSubroutines ,B.equations
programs
Application algorithms
Overview Of VLSI Design Methodology
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Overview Of VLSI Design MethodologySummary :
* VLSI Design Methodology using Major Activity Blocks
* Explain the Activity in each of the above Block . A) Logic Design. B) Physical design c) Foundry
* Types of libraries appended to Design Flow & its significance
* Using HA Truth table derive the followinga) Boolean Expression b) Behavioral Model C) Structural Modeld) Physical Model e) Gate level Netlist
* With the help of Y-Chart explain Design domains and Levels of Abstraction DAY ~ 2
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Thank You
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Technology Definition
SSI : 2 - 20 GATES
MSI : 20 - 200 GATES
LSI : 200 - 2000,000 GATES
VLSI : OVER 1 MILLION GATES
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Semiconductor Product Evolution (cont.)
1925 - MOSFET transistor Heil (England)1935 - MOSFET transistor Lilienfeld (Canada)1947 - Transistor Bardeen (Bell Labs)1949 - Bipolar transistor Shockley1956 - First bipolar digital logic gate by Harris1959- First monolithic IC by Jack Kilby1960 - First commercial IC logic gate by Fairchild
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Semiconductor Product Evolution
1960s - CMOS plagued with manufacturing problems1960s - PMOS in (calculators)1962 - 90 - TTL Logic gates
1974 - 80 - ECL Logic gates1970s - NMOS in (4004, 8080) for speed1980s - CMOS in preferred MOSFET technologybecause of power benefitsBiCMOS, Gallium-Arsenide, Silicon-GermaniumSOI, Copper- Low K,
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Technology EvolutionTECHNOLOGICAL
YEAR ERA BREAKTHROUGH
1920 -- Vacuum Tube - Vacuum Technology -- Glass to metal seal
1948 -- Transistor fabrication -- Crystal growth
1958 -- SSI - Planar technology - Digital Gates -- Photolithography
1962 -- MSI - PMOS Technology - Registers, -- Gate Oxidedecoders, muxes
1968 -- LSI - NMOS Technology- Memory -- ION Implantation &CVD
1978 -- VLSI - CMOS Technology -- multi layerinterconnect Micro processors Technology
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Evolution Of Microelectronics (cont.)
1960: Fairchilds first IC Dec. 1947: First Transistor
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