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    IC LAYOUT ENGINEERING

    Introduction

    to

    Microelectronics

    DAY ~ 2

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    Evolution Of Microelectronics

    1947: Three scientists at Bell Telephone Laboratories, WilliamShockley, Walter Brattain, and John Bardeen demonstrate the firsttransistor :

    1955: Frosch and Derick at Bell Labs patent the diffusion furnace anddevelop SiO2 passivation layers for silicon transistors

    1955: Andrus and Bond at Bell Labs pattern oxide layers withphotolithography

    1957: Lantrop and Nall (US Army) Pattern 200um leads to connectdiscrete transistors

    1958: Last and Noyce develop the first step and repeat cameras for lithographic processing at Fairchild

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    1957/1958: Jean Hoerni at Fairchild conceptualizes the first planer fabrication process for pn junctions using oxide barriers to protect pn

    junctions underneath. Allowed all of the circuitry required for transistor fabrication to be patterned on 1 side of the wafer.

    1959: Fairchilds Robert Noyce patents the monolithic IC that tiestransistors, capacitors, resistors together using micro lithographicallypatterned aluminum leads deposited on top of Heornis protectivecoating.

    1960:Fairchild sells planer npn transistor device utilizing SiO2 barrier oxide for passivation that was patterned using a lithographic fabricationprocess

    1960: Fairchild demonstrates the first IC with 4 transistors and 5resistors

    1961 GCA Corporation commercializes the step and repeat reduction

    device for optical lithography

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    Evolution Of Microelectronics (cont.)

    1960: First MOS transistor

    1960: Ian Ross of Bell Labs uses CVD to between the substrate andthe collector to raise breakdown voltage and significantly increase thespeed of the circuit

    1961: Hoerni demonstrates Silicon transistor that exceeds Geswitching speeds: Computers take off!!

    1963: San and Wanlass of Fairchild showed that p and n channelMOS transistors arranged into a complementary circuit (CMOS) drewclose to zero power in standby mode

    1964: Standard logic IC families introduced

    1964: General Microelectronics releases the first commercial MOS IC

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    MOS FET Structure

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    Evolution Of Microelectronics (cont.)

    1965: Fairchilds Director Gordon Moore introduces Moores law whichaccurately predicts the exponential increase of transistor density in anIC and provides a guide for technological progression that is still in usetoday

    NSF is now preparing for the demise of Moores law reached thelimits of optical lithography Single bit logic is fading to quantumcomputing and the q bit

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    Moores Law 1965: Fairchilds Director Gordon Moore introduces Moores law which

    accurately predicts the exponential increase of transistor density in anIC and provides a guide for technological progression that is still in usetoday

    NSF is now preparing for the demise of Moores law

    reached the limits of optical lithography Single bit logic is fading toquantum computing and the q bit

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    Evolution Of Microelectronics (cont.)

    1964: Multi chip SLT packaging technology introduced by IBM1965: Fairchild Engineers develop Dual In Line (DIP) chip packaging1966: Semiconductor bipolar RAM 1966/1967: Computer aided design leads to Application Specific IC(ASIC)

    1967: Turnkey equipment supplies such as Applied Materials introducecommercial tooling1969: Intel enters the scene with commercial tooling, silicon gatetechnology, and embedded metallic leads

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    1966 : First 256K Bipolar Ram 1971 : Intels 1stMicroprocessor: i4004

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    Design Of Performance Parameters

    Physical : Area , Size , Weight

    Power : Dissipation/Consumption

    Speed : Timing

    Noise : Cross talk

    http://images.google.co.in/imgres?imgurl=http://upload.wikimedia.org/wikipedia/commons/thumb/0/05/Ic-package-CDIP.svg/650px-Ic-package-CDIP.svg.png&imgrefurl=http://commons.wikimedia.org/wiki/File:Ic-package-CDIP.svg&usg=__4Er_rO9U401Cb6Zu-TMIOXnGpxU=&h=500&w=650&sz=32&hl=en&start=1&tbnid=4_USWHyQm88X8M:&tbnh=105&tbnw=137&prev=/images%3Fq%3DIC%2BPackage%26gbv%3D2%26hl%3Den%26sa%3DGhttp://images.google.co.in/imgres?imgurl=http://upload.wikimedia.org/wikipedia/commons/thumb/0/05/Ic-package-CDIP.svg/650px-Ic-package-CDIP.svg.png&imgrefurl=http://commons.wikimedia.org/wiki/File:Ic-package-CDIP.svg&usg=__4Er_rO9U401Cb6Zu-TMIOXnGpxU=&h=500&w=650&sz=32&hl=en&start=1&tbnid=4_USWHyQm88X8M:&tbnh=105&tbnw=137&prev=/images%3Fq%3DIC%2BPackage%26gbv%3D2%26hl%3Den%26sa%3DG
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    THE GOAL OF ASIC DESIGNER

    Meet the market requirement Satisfying the customer need Beating the competition Increasing the functionality Reducing the cost

    Achieved by Using the next generation Silicon

    Technologies New Design concept and Tools High Level Integration

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    Power

    Cost

    Delay

    Smaller is Better

    THE PERFORMANCE CUBE

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    VLSI TECHNOLOGY

    Backbone for all IT advancements. A Technology solution and not a product.Packages lot of circuitry ( Millions of Gates] MiniaturisationConfidentiality Low power operation

    Hand held battery operated gadgets

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    APPLICATIONS

    High Performance computing

    Datacom/ Networking

    Telecom/MOBILE/CELL/ WIL

    Multimedia

    Smart Cards

    Remote Controls

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    ADVANTAGES OF VLSI

    REDUCTION IN

    Design cycle time

    Product Size

    Power Consumption

    Cost

    INCREASE IN

    Speed

    Design Security

    Productivity

    Design Flexibility

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    MOORES LAW

    In 1969, Gorden Moore stated that SiliconTechnology will double the number of transistors per chip every 18 months!!!

    Gordon MooreIntel Co-Founder and Chairmain Emeritus

    Image source: Intel Corporation www.intel.com

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    MOORES LAW

    In 1969, Gorden Moore stated that SiliconTechnology will double the number of transistors

    per chip every 18 months!!!

    And it is happening ! ! ! ! ! ! !!!!!!!!

    Now Moores law has become self sustani ng

    Gordon MooreIntel Co-Founder and Chairmain Emeritus

    Image source: Intel Corporation www.intel.com

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    INTEGRATION LEVEL

    Year Types gates per chip

    60s - SSI : small-scale integration ~10

    70s MSI: medium-scale integration ~100 1K

    80s - LSI: large-scale integration ~1K 10K

    90s - VLSI: very large-scale integration ~10K 100K

    ULSI: ultra large scale integration ~1M 10M upwards

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    Shrinking of Technology

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    Shrinking of Technology

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    Shrinking of Technology

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    Shrinking of Technology

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    Shrinking of Technology

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    Shrinking of Technology

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    Shrinking of Technology

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    Gate & Interconnect Delays with shrinking

    0.651989

    0.51992

    0.351995

    0.251998

    0.182001

    0.132004

    0.12007

    0

    5

    10

    1520

    25

    30

    35

    40Gate delayInterconnect delay

    Source: SIA Roadmap 1997

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    Technology Directions

    Year 1999 2002 2005 2008 2011 2014

    Feature size (nm) 180 130 100 70 50 35Mtrans/cm 2 7 14-26 47 115 284 701

    Chip size (mm 2) 170 170-214 235 269 308 354

    Signal pins/chip 768 1024 1024 1280 1408 1472

    Clock rate (MHz) 600 800 1100 1400 1800 2200Wiring levels 6-7 7-8 8-9 9 9-10 10

    Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.6

    High-perf power (W) 90 130 160 170 174 183

    Battery power(W) 1.4 2.0 2.4 2.0 2.2 2.4

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    Over View

    Of

    VLSI DESIGN METHODOLOGY

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    VLSI - OVERVIEW

    Customer Specification

    Semi -CustomASIC

    Gate ArrayASIC

    FPGA

    ASIC

    VLSITECHNOLOGY

    FullCustom

    ASIC

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    Silicon Manufacturing Alternatives

    Standard Components Application Specific ICs

    Fixed Application

    Applicationby Programming

    SemiCustom

    SiliconCompilation

    FullCustom

    LogicFamilies

    HardwareProgramming

    (MASK)

    SoftwareProgramming

    TTLCMOS

    PLAROM

    Microprocessor EPROM,EEPROM

    PLD

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    Design Styles

    Complexity of VLSI circuits

    Full custom

    Performance Size Cost Market time

    Standard Cell Gate Array FPGA

    Different design styles

    Cost ,Flexibility,Performance

    ( )

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    VLSI - OVERVIEW (cont )Customer Specification

    Semi -CustomASIC

    Gate ArrayASIC

    FPGAASIC

    Full Custom ASIC

    Logic Design/Front End

    Gate Level

    Net List

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    behavioral 13

    Blocking assignment

    always @ (A1 or B1 or C1 or M1)// blocking assignments

    begin: BLOCK_COMBM1 = #3 (A1 & B1);Y1 = #1 (M1 | C1);

    end

    A1

    B1

    C1

    M1

    Y1

    3 1

    LOGIC DESIGN

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    VLSI - OVERVIEW

    Customer Specification

    Semi -CustomASIC

    Gate ArrayASIC

    FPGAASIC

    FullCustom

    ASIC

    Logic Design/Front End

    Physical Design/Back End

    Gate Level

    Net List

    Physicallayout

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    PHYSICAL

    DESIGN

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    FOUNDRY Masks

    Si wafer

    Chemicals

    ProcessedWafer

    Chips

    FinishedASIC

    ASICprocessing

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    ASIC

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    Design Summary

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    Design Functional Parameters

    ApplicationsSystem On Chip

    Mobile Communications

    Networking

    Space/Automobile applications

    Signal Processing

    Remote Sensing

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    Examples :

    SSI : All 74 XX ,54 XX series gates

    MSI: Decoders, mux, shift registers, counters etc.

    LSI: Memories, 8bit UPs/ UCs ,Peripheral devises etc

    VLSI : X86 to pentium,memories,and fpgas & ASICs

    ASIC Products

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    Applications Growth.

    1971 : Intel 4004 - 2300 transistors, 1 MHzclock

    Ultra Sparc III - 16 Million transistors

    2001 : Intel P4 - 42 Million, 2 GHz clock

    HP PA-8500 - 140 Million transistor

    Amazingly visionary million transistor/chip barrier was crossed in the 1980s

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    Design Characteristics

    0.13M12MHz1.5 um

    CAESystems,Silicon

    compilation

    7.5M333MHz0.25 um

    Cycle-basedsimulation,

    FormalVerification

    3.3M200MHz

    0.6 um

    Top-DownDesign,

    Emulation

    1.2M50MHz0.8 um

    HDLs,Synthesis

    0.06M2MHz

    6um

    SPICESimulation

    Key CAD Capabilities

    The Challenges to sustain such an exponential growth to achievegigascale integration have shifted in a large degree, from the process of manufacturing technologies to the design technology .

    VLSI Technology Trend

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    Intel Pentium (IV) Microprocessor

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    Technology 0.1 umTransistors 200 MLogic gates 40 MSize 520 mm 2

    Clock 2 - 3.5 GHzChip I/Os 4,000Wiring levels 7 - 8Voltage 0.9 - 1.2Power 160 WattsSupply current ~160 Amps

    PerformancePower consumption

    Noise immunityAreaCostTime-to-market

    Tradeoffs!!!

    The VLSI Chip in 2006

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    Design Abstraction Levels

    DEVICE

    n+S D

    n+

    G

    CIRCUIT

    Vout Vin

    CIRCUIT

    Vout Vin

    GATE

    MODULE

    +

    SYSTEM

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    VLSI TECHNOLOGY

    Encompasses different Design Domains:

    Logic Design - As Code

    Physical design - As Layout

    Product Fabrication - As product

    DESIGN METHODOLOGIES- Y CHART

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    TTM Institute of Technology 52Circuit abstraction level

    Micro architectureabstraction level

    ogic abstraction levelSystem abstracti

    level

    Ph ysical domain

    STRUCTURAL DOMAIBEHAVIORAL DOMAIN Synthesis

    Chips.MCM,boards

    CellsChips / modules

    Layout transistor

    Transistors

    Logic gates ALUs , registers

    processors

    instructionsSubroutines ,B.equations

    programs

    Application algorithms

    Overview Of VLSI Design Methodology

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    Overview Of VLSI Design MethodologySummary :

    * VLSI Design Methodology using Major Activity Blocks

    * Explain the Activity in each of the above Block . A) Logic Design. B) Physical design c) Foundry

    * Types of libraries appended to Design Flow & its significance

    * Using HA Truth table derive the followinga) Boolean Expression b) Behavioral Model C) Structural Modeld) Physical Model e) Gate level Netlist

    * With the help of Y-Chart explain Design domains and Levels of Abstraction DAY ~ 2

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    Thank You

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    Technology Definition

    SSI : 2 - 20 GATES

    MSI : 20 - 200 GATES

    LSI : 200 - 2000,000 GATES

    VLSI : OVER 1 MILLION GATES

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    Semiconductor Product Evolution (cont.)

    1925 - MOSFET transistor Heil (England)1935 - MOSFET transistor Lilienfeld (Canada)1947 - Transistor Bardeen (Bell Labs)1949 - Bipolar transistor Shockley1956 - First bipolar digital logic gate by Harris1959- First monolithic IC by Jack Kilby1960 - First commercial IC logic gate by Fairchild

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    Semiconductor Product Evolution

    1960s - CMOS plagued with manufacturing problems1960s - PMOS in (calculators)1962 - 90 - TTL Logic gates

    1974 - 80 - ECL Logic gates1970s - NMOS in (4004, 8080) for speed1980s - CMOS in preferred MOSFET technologybecause of power benefitsBiCMOS, Gallium-Arsenide, Silicon-GermaniumSOI, Copper- Low K,

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    Technology EvolutionTECHNOLOGICAL

    YEAR ERA BREAKTHROUGH

    1920 -- Vacuum Tube - Vacuum Technology -- Glass to metal seal

    1948 -- Transistor fabrication -- Crystal growth

    1958 -- SSI - Planar technology - Digital Gates -- Photolithography

    1962 -- MSI - PMOS Technology - Registers, -- Gate Oxidedecoders, muxes

    1968 -- LSI - NMOS Technology- Memory -- ION Implantation &CVD

    1978 -- VLSI - CMOS Technology -- multi layerinterconnect Micro processors Technology

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    Evolution Of Microelectronics (cont.)

    1960: Fairchilds first IC Dec. 1947: First Transistor

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