0475optical
Transcript of 0475optical
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(c) Sergiusz Patela Optical waveguide amplifiers
Optical amplifier functions
1. In-line amplifier
2. Power booster
3. Detector preamplifier
Transmitter
Receiver Preamplifier
In-line Amplifier
Power Booster
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Optical amplifiers - classification
1. Semiconductor optical amplifiers (SOA, 400 - 2000 nm band)
2. Raman optical amplifiers
3. Brillouin optical amplifiers
4. Erbium doped fiber amplifier (EDFA, 1500-1600 nm band), alsoPDFFA(1300 nm band)
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SOA principle of operation
An SOA is based on the same technology as a Fabry-Perot diode laser. Theamplification function is achieved by externally pumping the energy levels ofthe material. In order to get only the amplification function, it is necessary to
protect the device against self-oscillations generating the laser effect. This isaccomplished by blocking cavity reflections using both an antireflection (AR)coating and the technique of angle cleaving the chip facets. SOAs areelectrically pumped by injected current
P in R~ 0 R~ 0P out = P in e g L
L
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SOA advantages
1. Compactness
2. Integration potential
3. High power output4. Broad choice of operating wavelength (400-2000 nm)
5. Low price with high volume production
Disadvantages
1. High coupling loss
2. Polarization dependence3. High noise figure (as compared with EDFA)
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SOA parameters (State-of-the-art)
Wavelength ~1300 nm or ~1550 nm residual reflectivity of less than 10 -4 to ensure a gain ripple below 0.5
dB
low optical loss to achieve a net gain as high as 30 dB high material gain to allow low-drive current operation (20 to 30 dB
fiber-to-fiber gain for a 100-mA drive current) high output saturation power, defined as the output power for which
the gain is reduced by 3 dB chip-to-fiber coupling loss of less than 3 dB per facet, which is
achieved using integrated mode-expanding tapered waveguides at theoutput facets.
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Polarisation sensitivity of SOA
Polarisation sensitivity of SOA is less than 0.5 dB The polarization state of the optical signal coming from a link fibre is
usually random.
Material gain is isotropic in bulk material The strip waveguide in the SOA active area is polarisation sensitive
(differential gain between transverse-electric (TE) and transverse-magnetic (TM) modes)
Polarization sensitivity as low as 0.3 dB can be achieved with a nearsquare (0.4 m * 0.6 m) active waveguide having almost the sameconfinement factor for both polarization states.
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Example of SOA design
Semiconductor Laser Chip
Anti-reflectionCoating
Tapered Fiberno 1
Tapered Fiberno 2
Waveguide
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Optical amplification - EDFA
Erbium Doped Fiber Amplifier PumpLaser
InputSignal
Erbium Doped Fiber
AmplifiedOutputSignal
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Erbium Doped Fiber Amplifier
EDFA optical amplifiers are made of short lengths (a few meters) ofoptical fiber doped with the element erbium. A pumping laser exciteserbium ions in the fiber, which can then give their energy to theoptical signals passing through.
Amplified wavelength: about 1550nm
Pump wavelengths: 980 and/or 1480.
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Erbium Excitation/Emission
Pump signals - 1480 nm and/or 980 nm. Erbium ions stays in excitedstate for about 10 ms (time is longer for 980 nm).
Excited State 1Erbium ion
1480 mnpump
Ground state
Signal Amplified1550nm
signal
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EDFA amplifier basic structure
Opticalinput Coupler
Optical
output
LDpump
Er 3+ doped fiber
Wavelength [ m]
25 dB
Ampl.
40 nm
1.55
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ASE
Amplified Spontaneous Emission (ASE): A backgroundnoise mechanism common to all types of erbium-doped fiber
amplifiers (EDFAs). It contributes to the noise figure of theEDFA which causes loss of signal-to-noise-ratio (SNR).
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EDFA parameters
wide bandwidth - 40 nm (5000 GHz)
high amplification - 30 do 40 dB
high output power - do +20dBm (100 mW)
low noise - 4 dB (Noise factor F)
pump wavelength - 980 or 1480 nm
no dispersion compensation
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Block diagram of a full-featured EDFA amplifier
Coupler
1
OpticalInput
1550 nm
99%
1%
Isolator 1 Isolator 3
Isolator 2
Coupler
2
99%
1% 1%
Erbium DopedFiber
WDM 1 WDM 2 OpticalOutput
1550 nm
Detector 1Input
Monitor
Detector 2Reflection
Monitor
Detector 3OutputMonitor
980 nmPump
Laser 1
980 nmPump
Laser 2
Microcontroller-based Control and
Monitoring Circuitry
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Two-stage EDFA with Mid-stage Access
OpticalInput1550 nm
OpticalOutput1550 nm
Isolator 1 Isolator 4Isolator 2 Isolator 3WDM 1 WDM 2
Erbium DopedFiber 1
Erbium DopedFiber 2
980 nmPump
Laser 1
980 nmPump
Laser 2
Microcontroller-based Control and
Monitoring Circuitry
Mid-stage access
(e.g. dispersioncompensation module)
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Raman Scattering
The principle of Raman scattering is that a lower wavelength pump-laser light traveling down an optical fiber along with thesignal, scatters off atoms in the fiber, loses some energy to theatoms, and then continues its journey with the same wavelengthas the signal.
SignalwavelengthPump
wavelength
Ramanscattering
Signal
wavelength
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Comparison of EDFA, SOA and EDWA
Technology Description Advantage Disadvantage SuppliersErbium DopedFiber Amplifier (EDFA)
Standard beyond 2005
Knowntechnology;
provenmanufacturable
Higher cost Corning, JDS Uniphase,Agere, Alcatel Optronics,
Nortel HPOCS, Avanex,Altamar, Onetta, Keopsys
Semiconductor OpticalAmplifier (SOA)
Discrete InP- basedcomponent
Potential lowcost; ease of integration;small size
Low output power; highnoise; immaturetechnology
Alcatel Optronics, Genoa,JDS Uniphase, NortelHPOCS, Optical Crossing,Kamelian, OptoSpeed
Erbium DopedWaveguideAmplifier (EDWA)
Planar waveguideamplifier
Potential lowcost; small size
Immaturetechnology;difficult tomanufacture
Teem Photonics, Cisilias, Northstar Photonics,Symmorphix
Christine Mulrooney, Optical Amplifiers--the Metro Story, CIR Whitepaper
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Books
1. P. C. Becker, N.A. Olsson, J.R. Simpson, Erbium-Doped FiberAmplifiers: Fundamentals and Technology Academic Pr 1999
2. Emmanuel Desurvire Erbium-Doped Fiber Amplifiers : Principles andApplications, John Wiley & Sons 1994
3. S. Sudo (Editor), Optical Fiber Amplifiers : Materials, Devices, andApplications (Artech House Optoelectronics Library), Artech House
19974. Govind P. Agrawal, Nonlinear Fiber Optics, Second Edition,
Academic Pr 1995