High Efficiency 600V/15A MOS IPM with PrestoMOS™

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New Product Bulletin Integrated high performance PrestoMOS TM * contributes to increased energy savings in AC systems With the trend towards increasing awareness for greater energy savings and environmental protection comes a need to minimize power consumption in AC systems, which is typically the largest consumer of energy in the home. More specifically, it is important to improve loss during steady state operation at low loads as well as large power loads to the IPM during AC startup. ROHM’s BM65364S integrates a gate driver, bootstrap diodes, and bootstrap current control function into a single module that simplifies inverter system design along with a low ON resistance Super Junction MOSFET (PrestoMOS TM ) in the inverter block to achieve class-leading power consumption and significant energy savings - particularly during steady state operation BM65364S-VA / BM65364S-VC High Efficiency 600V/15A MOS IPM with PrestoMOS™ Loss Comparison (600V/15A products) Loss Comparison (600V/15A products) Ta=25 ° C, P=400V, Vcc=15V, fc=5kHz, 3-phase modulation Ta=25°C, P=400V, Vcc=15V, fc=5kHz, 3-phase modulation IGBT-IPM MOS-IPM ( BM65364S-VA) MOS-IPM (BM65364S-VA) 0 1 2 3 4 5 Loss (W) I (Amps) IGBT-IPM : IGBT used in the inverter block MOS-IPM : MOSFET (PrestoMOS™) used in the inverter block IGBT-IPM vs MOS-IPM Energy Loss Comparison Modular design makes configuring inverter systems easy Reduces steady state loss Offered in 2 package types HSDIP25 • PrestoMOS™ delivers class-leading ON resistance for greater energy savings (improved APF*) • Simplifies the design of inverter systems • Multiple protection functions provide worry-free use • Pin-compatibility with ROHM’s IGBT IPM allows for common board designs • High quality system ensured through integrated production at the chip level Compared to IGBT IPMs, ROHM’s new MOS IPM signficantly reduces power loss in AC systems during steady state operation (2-4A) In addition to the standard HSDIP25 type, the HSDIP25VC package is available featuring staggered control pins that make dip soldering easier and provide better board isolation Gate drivers (LVIC, HVIC), bootstrap diodes, and a Super Junction MOSFET (PrestoMOS TM ) integrated into a single package VBU VBV VBW HINU HINV HINW HVCC GND LINU LINV LINW LVCC FO CIN GND NW NV NU W V U P HVIC 5 6 7 8 9 10 11 12 13 14 2 3 4 23 22 24 21 20 19 18 Inverter HVIC (High Side Gate Driver) Bootstrap Diodes LVIC (Low Side Gate Driver) MOS-IPM Configuration Features 38 20X1.778(=35.56) 35 24 16-0.5 16-0.5 0.28 1.778 0.28 1.778 2-R1.6 0.28 2.54 0.28 2.54 Part No. Lot No. 8-0.6 4-C1.2 8-0.6 14X2.54(=35.56) 14X2.54(=35.56) 8 8 8 Part No. Lot No. • 600V Gate driver • SOI (Silicon-On-Insulator) process • UVLO: Under Voltage Lock Out (Floating power supply) • Bootstrap diode current limiting function • 600V/15A PrestoMOS™ • Low ON resistance • Low VF high-speed trr body diode • Multiple protection functions UVLO: Under Voltage Lock Out SCP: Short-Circuit Protection TSD: Thermal Shut Down • Fault signal output Fast Recovery types [email protected] 2-R1.6 24 3MIN 3MIN 8 8 8 3MIN 4-C1.2 43% less 34% less IGBT-IPM current during steady state ope AC current during steady state operation Mirror Finished Mirror Finished -VA (HSDIP25) -VC (HSDIP25VC) 38 20X1.778(=35.56) 35 3MIN LVIC 15 16 *PrestoMOS is a registered trademark of ROHM Co., Ltd. (’Presto’ is an Italian musical term meaning ‘extremely quick’.) *APF (Annual Performance Factor) Based on the energy consumption efficiency when operating a home AC system for an entire year Product Outline .57F6859E 03.2015 30th March,2015.

Transcript of High Efficiency 600V/15A MOS IPM with PrestoMOS™

  • New Product Bulletin

    Integrated high performance PrestoMOSTM* contributesto increased energy savings in AC systems

    With the trend towards increasing awareness for greater energy savings and environmental protection comes a need to minimize power consumption in AC systems, which is typically the largest consumer of energy in the home. More specifically, it is important to improve loss during steady state operation at low loads as well as large power loads to the IPM during AC startup. ROHM’s BM65364S integrates a gate driver, bootstrap diodes, and bootstrap current control function into a single module that simplifies inverter system design along with a low ON resistance Super Junction MOSFET (PrestoMOSTM) in the inverter block to achieve class-leading power consumption and significant energy savings - particularly during steady state operation

    BM65364S-VA / BM65364S-VC

    High Efficiency 600V/15A MOS IPM with PrestoMOS™

    Loss Comparison (600V/15A products)Loss Comparison (600V/15A products)Ta=25°C, P=400V, Vcc=15V, fc=5kHz, 3-phase modulationTa=25°C, P=400V, Vcc=15V, fc=5kHz, 3-phase modulation

    IGBT-IPM

    MOS-IPM(BM65364S-VA)

    MOS-IPM(BM65364S-VA)

    0 1 2 3 4 5

    Loss

    (W)

    I (Amps)

    IGBT-IPM : IGBT used in the inverter block MOS-IPM : MOSFET (PrestoMOS™) used in the inverter block

    IGBT-IPM vs MOS-IPM Energy Loss Comparison

    ■ Modular design makes configuring inverter systems easy

    ■ Reduces steady state loss ■ Offered in 2 package types

    HSDIP25

    • PrestoMOS™ delivers class-leading ON resistance for greater energy savings (improved APF*)

    • Simplifies the design of inverter systems

    • Multiple protection functions provide worry-free use

    • Pin-compatibility with ROHM’s IGBT IPM allows for common board designs

    • High quality system ensured through integrated production at the chip level

    Compared to IGBT IPMs, ROHM’s new MOS IPM signficantly reduces power loss in AC systems during steady state operation (2-4A)

    In addition to the standard HSDIP25 type, the HSDIP25VC package is available featuring staggered control pins that make dip soldering easier and provide better board isolation

    Gate drivers (LVIC, HVIC), bootstrap diodes, and a Super Junction MOSFET (PrestoMOSTM) integrated into a single package

    VBU

    VBV

    VBW

    HINUHINVHINWHVCCGND

    LINULINVLINWLVCC

    FO

    CINGND

    NW

    NV

    NU

    W

    V

    U

    P

    HVIC

    56789

    10111213

    14

    2

    3

    423

    22

    24

    21

    20

    19

    18

    Inverter

    HVIC (High Side Gate Driver)

    Bootstrap Diodes

    LVIC (Low Side Gate Driver)

    MOS-IPM ConfigurationFeatures

    3820X1.778(=35.56)

    35

    24

    16-0.516-0.50.28

    1.778

    0.281.778

    2-R1.6

    0.282.54

    0.282.54

    Part No.Lot No.

    8-0.64-C1.2

    8-0.614X2.54(=35.56) 14X2.54(=35.56)

    8

    88 Part No.Lot No.

    • 600V Gate driver• SOI (Silicon-On-Insulator) process• UVLO: Under Voltage Lock Out (Floating power supply)• Bootstrap diode current limiting function

    • 600V/15A PrestoMOS™• Low ON resistance• Low VF high-speed trr body diode

    • Multiple protection functions UVLO: Under Voltage Lock Out SCP: Short-Circuit Protection TSD: Thermal Shut Down• Fault signal output

    Fast Recovery [email protected]

    2-R1.6

    24

    3MIN3MIN

    8

    88

    3MIN4-C1.2

    43%less 34%less

    IGBT-IPM

    current during steady state opeAC current during steady state operation

    MirrorFinished MirrorFinished

    -VA (HSDIP25) -VC (HSDIP25VC)38

    20X1.778(=35.56)35

    3MIN

    LVIC

    1516

    *PrestoMOS is a registered trademark of ROHM Co., Ltd.(’Presto’ is an Italian musical term meaning ‘extremely quick’.)

    *APF (Annual Performance Factor)Based on the energy consumptionefficiency when operating a homeAC system for an entire year

    Product Outline

    .57F6859E 03.2015

    30th March,2015.