슬라이드 1 - zbmcc.com
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1 2 3 4 5 7 6 Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CES 1200 V Gate-Emitter Voltage V GES ±20 V Continuous Collector Current T C = 25 ℃ I C 300 A T C = 100 ℃ 150 A Pulsed Collector Current (Note 1) I CM 300 A Diode Continuous Forward Current T C = 100 ℃ I F 88 A Power Dissipation T C = 25 ℃ P D 625 W T C = 100 ℃ 250 W Operating Junction Temperature T J -40 ~ 150 ℃ Storage Temperature Range T STG -40 ~ 150 ℃ Thermal Characteristics Parameter Symbol Value Unit Typical Thermal resistance, Junction-to-Case (Per ½ Module) R θJC (IGBT) 0.2 K/W Typical Thermal resistance, Junction-to-Case (Per ½ Module) R θJC (DIODE) 0.6 K/W Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Features • 1200V NPT Trench Technology • Fast & Soft inverse Diodes • Positive Temperature Coefficient • Short Circuit Withstanding Time 10μs • UL certified, file No. E490086 Applications Motor driver, IH(Induction heating), Rectifier, Welder General Description ZBMCC IGBT power module provides low conduction & switching loss as well as short circuit ruggedness. It is designed for applications such as Motor Driver, IH & Rectifier applications. MG150MA120BUT www.zbmcc.com Rev.Tr preliminary data 201909 1 ·
Transcript of 슬라이드 1 - zbmcc.com
1 2 3
4 5
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Absolute Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Continuous Collector Current TC = 25
IC
300 A
TC = 100 150 A
Pulsed Collector Current (Note 1) ICM 300 A
Diode Continuous Forward Current TC = 100 IF 88 A
Power Dissipation TC = 25
PD
625 W
TC = 100 250 W
Operating Junction Temperature TJ -40 ~ 150
Storage Temperature Range TSTG -40 ~ 150
Thermal Characteristics
Parameter Symbol Value Unit
Typical Thermal resistance, Junction-to-Case (Per ½ Module) RθJC (IGBT) 0.2 K/W
Typical Thermal resistance, Junction-to-Case (Per ½ Module) RθJC (DIODE) 0.6 K/W
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Features • 1200V NPT Trench Technology
• Fast & Soft inverse Diodes
• Positive Temperature Coefficient
• Short Circuit Withstanding Time 10μs
• UL certified, file No. E490086
Applications Motor driver, IH(Induction heating), Rectifier, Welder
General Description ZBMCC IGBT power module provides low conduction
& switching loss as well as short circuit ruggedness.
It is designed for applications such as Motor Driver, IH
& Rectifier applications.
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 1·
Electrical Characteristics of the IGBT Tj=25, unless otherwise noted
Parameter Symbol Test condition Min. Typ. Max. Unit
OFF
Collector – Emitter Breakdown Voltage BVCES VGE = 0V, IC = 1mA 1200 -- -- V
Zero Gate Voltage Collector Current ICES VCE = 1200V, VGE = 0V -- -- 1 mA
Gate – Emitter Leakage Current IGES VCE = 0V, VGE = ± 20V -- -- ± 100 nA
ON
Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 250μA 4.0 -- 7.5 V
VGE = VCE, IC = 150mA 5.0 -- 8.5 V
Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 150A, Tj = 25 -- 2.3 2.8 V
VGE = 15V, IC = 150A, Tj = 150 -- 2.5 3.0 V
DYNAMIC
Input Capacitance CIES VCE = 25V,
VGE = 0V
f = 1MHz
-- 20 -- nF
Output Capacitance COES -- 980 -- pF
Reverse Transfer Capacitance CRES -- 450 -- pF
SWITCHING
Turn-On Delay Time td(on)
VCC = 600V, IC = 150A
RG = 1.1Ω, VGE = ±15V
Inductive Load, Tj = 25
-- 85 -- ns
Rise Time tr -- 45 -- ns
Turn-Off Delay Time td(off) -- 340 -- ns
Fall Time tf -- 70 -- ns
Turn-On Switching Loss EON -- 1.8 -- mJ
Turn-Off Switching Loss EOFF -- 6.1 -- mJ
Total Switching Loss ETS -- 7.9 -- mJ
Turn-On Delay Time td(on)
VCC = 600V, IC = 150A
RG = 1.1Ω, VGE = ±15V
Inductive Load, Tj = 150
-- 130 -- ns
Rise Time tr -- 65 -- ns
Turn-Off Delay Time td(off) -- 510 -- ns
Fall Time tf -- 100 -- ns
Turn-On Switching Loss EON -- 2.6 -- mJ
Turn-Off Switching Loss EOFF -- 10.7 -- mJ
Total Switching Loss ETS -- 13.3 -- mJ
Total Gate Charge Qg
VCC = 600V, IC = 150A
VGE = 15V
-- 1270 -- nC
Gate-Emitter Charge Qge -- 220 -- nC
Gate-Collector Charge Qgc -- 570 -- nC
Short Circuit Withstanding Time tSC VCC = 600V, VGE = 15V, Tj = 150 10 -- -- μs
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 2·
Electrical Characteristics of the DIODE Tj=25, unless otherwise noted
Parameter Symbol Test condition Min. Typ. Max. Unit
Diode Forward Voltage VFM IF = 150A Tj = 25 -- 1.8 2.6
V Tj = 150 -- 1.9 2.7
Reverse Recovery Current Irr
VCC = 600V, IF = 150A
RG = 1.1Ω, VGE = ±15V
Inductive Load
Tj = 25 -- 65 -- A
Tj = 150 -- 85 --
Reverse Recovery Charge Qrr
Tj = 25 -- 13.5 -- μC
Tj = 150 -- 25.5 --
Reverse Recovery Energy Err
Tj = 25 -- 4.3 -- mJ
Tj = 150 -- 6.7 --
Characteristics of the Module
Parameter Symbol Test condition Min. Typ. Max. Unit
Isolation Voltage VISO RMS, f=50Hz, t=1 minutes -- 2.5 -- kV
Terminal mounting torque (M5) -- -- 3.0 -- N.m
Weight -- -- 170 -- g
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 3·
0 5 10 15 20 25 300
10
20
30
40
50
60
EON
EOFF
Sw
itch
ing
En
erg
y [
mJ]
Gate Resistor, RG [Ω]
Common Emitter
VCC
= 600V, VGE
= ±15V, IC= 150A
Tj = 25
oC
Tj = 150
oC
100 150 200 250 30010
100td(on)
Sw
itchin
g T
ime [ns]
Collector Current, IC [A]
tr
Tj = 25
oC
Tj = 150
oC
Common Emitter
VCC = 600V, V
GE = ±15V, R
G= 1.1Ω
0 5 10 15 20 25 3010
100
1000
Common Emitter
VCC
= 600V, VGE
= ±15V, IC= 150A
td(off)
Sw
itch
ing
Tim
e [n
s]
Gate Resistor, RG [Ω]
tf
Tj = 25
oC
Tj = 150
oC
0 5 10 15 20 25 3010
100
1000
Tj = 25
oC
Tj = 150
oC
Common Emitter
VCC
= 600V, VGE
= ±15V, IC= 150A
td(on)
Sw
itch
ing
Tim
e [n
s]
Gate Resistor, RG [Ω]
tr
0 1 2 3 40
20
40
60
80
100
120
140
160
180
200
VGE
= 15V
Tj = 25
oC
Tj = 150
oC
Colle
cto
r C
urr
ent, I
C [A
]
Collector - Emitter Voltage, VCE
[V]
0 2 4 6 80
50
100
150
200
17 V
VGE
= 20 V
15 V
12 V
10 V
8 V
Colle
cto
r C
urr
ent, I
C [A
]
Collector - Emitter Voltage, VCE
[V]
Tj = 25
oC
IGBT Characteristics
Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics
Fig. 3 Turn-on time vs. gate resistor Fig. 4 Turn-off time vs. gate resistor
Fig. 5 Switching loss vs. gate resistor Fig. 6 Turn-on time vs. collector current
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 4·
1 10 100 10000.01
0.1
1
10
10050s
100s
500s1ms
DC operation
IC Max. (pulsed)
Co
llecto
r C
urr
en
t, I
C [
A]
Collector - Emitter Voltage, VCE
[V]
IC Max. (continuous)
10-5
10-4
10-3
10-2
10-1
100
10-4
10-3
10-2
10-1
100
Duty = 0.5
0.1
0.2
0.05
0.01
0.02
T
he
rma
l R
esp
on
se
[Z
thjc
]
Rectangular Pulse Width [sec]
single pulse
0 200 400 600 800 1000 1200 14000
3
6
9
12
15
Tj = 25 C
Gate
-Em
itte
r V
oltage, V
GE [V
]
Gate Charge, Qg [nC]
Common Emitter
IC= 100A, Resistive Load
VCE
=600V
100 150 200 250 3000
4
8
12
16
20
24
28
Common Emitter
VCC = 600V, V
GE = ±15V, R
G= 1.1Ω
Collector Current, IC [A]
EON
Sw
itchin
g E
nerg
y [m
J]
EOFF
Tj = 25
oC
Tj = 150
oC
100 150 200 250 30010
100
1000
Common Emitter
VCC = 600V, V
GE = ±15V, R
G= 1.1Ω
Collector Current, IC [A]
td(off)
Sw
itchin
g T
ime [ns]
tf
Tj = 25
oC
Tj = 150
oC
Fig. 7 Turn-off time vs. collector current Fig. 8 Switching loss vs. collector current
IGBT Characteristics
Fig. 9 Gate charge characteristics Fig. 10 Transient thermal impedance of IGBT
Fig. 11 SOA Fig. 12 RBSOA
1 10 100 10001
10
100
Co
llecto
r C
urr
en
t, I
C [
A]
Collector - Emitter Voltage, VCE
[V]
VGE
= ±15V, Tj = 150
oC
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 5·
0.0 0.5 1.0 1.5 2.0 2.5 3.00
20
40
60
80
100
120
140
160
180
200
Tj = 25
oC
Tj = 150
oC
Forw
ard
Curr
ent, I
F [A
]
Forward Voltage, VF [V]
Diode Characteristics
Fig. 13 Conduction characteristics of Diode
MG150MA120BUT
www.zbmcc.com Rev.Tr preliminary data 201909 6·
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MG150MA120BUT
Package Outline (Unit: mm):
Internal Circuit:
MG75MA120BUT
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